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1
Wang, Yumeng. "Two-Dimensional Ferroelectric Materials: Synthesis, Characterization and Applications." Highlights in Science, Engineering and Technology 112 (August 20, 2024): 128–36. http://dx.doi.org/10.54097/rzvdx423.
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In recent years, the continuous advancements in microelectronics have driven the evolution of electronic devices towards miniaturization and integration. However, at the nanoscale level, surface and size effects become significant, imposing constraints on the use of conventional bulk ferroelectric materials in contemporary industry. As a result, in the field of materials research, two-dimensional (2D) ferroelectric materials with stable spontaneous polarization and minimal size effects have gained significant attention. These novel 2D ferroelectric materials have great potential for future nano-level ferroelectric applications, enabling high levels of device integration. To begin with, this paper divides 2D ferroelectric materials into two categories: intrinsic ferroelectrics and sliding ferroelectrics. It also discusses the features and current state of research on each of these categories. Next, typical 2D ferroelectric material preparation and characterization techniques are outlined. Additionally, 2D ferroelectric memory devices like ferroelectric diodes (FD), ferroelectric field effect transistors (FeFET), ferroelectric semiconductor field-effect transistors (FeSFET), and ferroelectric tunnel junctions (FTJ) are introduced. Finally, this review also presents expectations and potential challenges in the domain of 2D ferroelectric materials.
2
Zhang, Xinhao, and Bo Peng. "The twisted two-dimensional ferroelectrics." Journal of Semiconductors 44, no. 1 (January 1, 2023): 011002. http://dx.doi.org/10.1088/1674-4926/44/1/011002.
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Abstract Since the beginning of research on two-dimensional (2D) materials, a few numbers of 2D ferroelectric materials have been predicted or experimentally confirmed, but 2D ferroelectrics as necessary functional materials are greatly important in developing future electronic devices. Recent breakthroughs in 2D ferroelectric materials are impressive, and the physical and structural properties of twisted 2D ferroelectrics, a new type of ferroelectric structure by rotating alternating monolayers to form an angle with each other, have attracted widespread interest and discussion. Here, we review the latest research on twisted 2D ferroelectrics, including Bernal-stacked bilayer graphene/BN, bilayer boron nitride, and transition metal dichalcogenides. Finally, we prospect the development of twisted 2D ferroelectrics and discuss the challenges and future of 2D ferroelectric materials.
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Jiang, Shujuan, Yongwei Wang, and Guangping Zheng. "Two-Dimensional Ferroelectric Materials: From Prediction to Applications." Nanomaterials 15, no. 2 (January 12, 2025): 109. https://doi.org/10.3390/nano15020109.
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Ferroelectric materials hold immense potential for diverse applications in sensors, actuators, memory storage, and microelectronics. The discovery of two-dimensional (2D) ferroelectrics, particularly ultrathin compounds with stable crystal structure and room-temperature ferroelectricity, has led to significant advancements in the field. However, challenges such as depolarization effects, low Curie temperature, and high energy barriers for polarization reversal remain in the development of 2D ferroelectrics with high performance. In this review, recent progress in the discovery and design of 2D ferroelectric materials is discussed, focusing on their properties, underlying mechanisms, and applications. Based on the work discussed in this review, we look ahead to theoretical prediction for 2D ferroelectric materials and their potential applications, such as the application in nonlinear optics. The progress in theoretical and experimental research could lead to the discovery and design of next-generation nanoelectronic and optoelectronic devices, facilitating the applications of 2D ferroelectric materials in emerging advanced technologies.
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Yu, Limin, Lijing Wang, Yanmeng Dou, Yongya Zhang, Pan Li, Jieqiong Li, and Wei Wei. "Recent Advances in Ferroelectric Materials-Based Photoelectrochemical Reaction." Nanomaterials 12, no. 17 (August 31, 2022): 3026. http://dx.doi.org/10.3390/nano12173026.
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Inorganic perovskite ferroelectric-based nanomaterials as sustainable new energy materials, due to their intrinsic ferroelectricity and environmental compatibility, are intended to play a crucial role in photoelectrochemical field as major functional materials. Because of versatile physical properties and excellent optoelectronic properties, ferroelectric-based nanomaterials attract much attention in the field of photocatalysis, photoelectrochemical water splitting and photovoltaic. The aim of this review is to cover the recent advances by stating the different kinds of ferroelectrics separately in the photoelectrochemical field as well as discussing how ferroelectric polarization will impact functioning of photo-induced carrier separation and transportation in the interface of the compounded semiconductors. In addition, the future prospects of ferroelectric-based nanomaterials are also discussed.
5
Liu, Arthur Haozhe, Lisa Luhong Wang, and Lingping Kong. "Relaxor ferroelectrics materials under high pressure." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C979. http://dx.doi.org/10.1107/s2053273314090202.
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The rich phase diagrams from both relaxor and normal ferroelectrics under high pressure, stimulate us to study the pressure effect on the relaxor-PbTiO3 (PT) systems, to check whether the high pressure cubic structure will turn to low symmetry structure upon strong compression is the common behaviors for relaxor ferroelectrics materials. Furthermore, a complete phase diagram study of pressure-temperature effect on structure will allow us to explore the limitation on applications of relaxor-PT material devices under harsh environment involving in high pressure and high temperature conditions. Structure evolution and phase transition of several solid solution ferroelectrics, such as Pb(YbNb)O3-PT (PYN-PT), have been studied using in situ synchrotron X-ray diffraction (XRD) and Raman spectroscopy techniques under high pressure and high temperature conditions. XRD results show pressure induced phase transitions to a cubic phase, while the persistence of Raman spectroscopy in the full pressure range indicates its local distortion. A pressure-temperature phase diagram is further constructed to determine the stability region of the ferroelectric phase. The results provide useful guidance for the applications of this kind of high Curie temperature ferroelectric crystal under extreme conditions, and extra clue to synthesis of ferroelectric materials with tailored properties.
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PARK, Min Hyuk. "Renaissance of Ferroelectric Memories: Can They Be a Game-changer?" Physics and High Technology 30, no. 9 (September 30, 2021): 16–23. http://dx.doi.org/10.3938/phit.30.028.
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Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.
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Chen, Li, Mei Er Pam, Sifan Li, and Kah-Wee Ang. "Ferroelectric memory based on two-dimensional materials for neuromorphic computing." Neuromorphic Computing and Engineering 2, no. 2 (March 25, 2022): 022001. http://dx.doi.org/10.1088/2634-4386/ac57cb.
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Abstract Ferroelectric memory devices with fast-switching speed and ultra-low power consumption have been recognized as promising building blocks for brain-like neuromorphic computing. In particular, ferroelectric memories based on 2D materials are attracting increasing research interest in recent years due to their unique properties that are unattainable in conventional materials. Specifically, the atomically thin 2D materials with tunable electronic properties coupled with the high compatibility with existing complementary metal-oxide-semiconductor technology manifests their potential for extending state-of-the-art ferroelectric memory technology into atomic-thin scale. Besides, the discovery of 2D materials with ferroelectricity shows the potential to realize functional devices with novel structures. This review will highlight the recent progress in ferroelectric memory devices based on 2D materials for neuromorphic computing. The merits of such devices and the range of 2D ferroelectrics being explored to date are reviewed and discussed, which include two- and three-terminal ferroelectric synaptic devices based on 2D materials platform. Finally, current developments and remaining challenges in achieving high-performance 2D ferroelectric synapses are discussed.
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Herber, Ralf-Peter, and Gerold A. Schneider. "Surface displacements and surface charges on Ba2CuWO6 and Ba2Cu0.5Zn0.5WO6 ceramics induced by local electric fields investigated with scanning-probe microscopy." Journal of Materials Research 22, no. 1 (January 2007): 193–200. http://dx.doi.org/10.1557/jmr.2007.0030.
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Ba2CuWO6 (BCW) was first synthesized in the mid 1960s, and it was predicted to be a ferroelectric material with a very high Curie temperature of 1200 °C [N. Venevtsev and A.G. Kapyshev: New ferroelectrics. Proc. Int. Meet. Ferroelectr.1, 261 (1966)]. Since then, crystallographic studies were performed on the compound with the result that its crystal structure is centrosymmetric. Thus for principal reason, BCW cannot be ferroelectric. That obvious contradiction was examined in this study. Disk-shaped ceramic samples of BCW and Ba2Cu0.5Zn0.5WO6 (BCZW) were prepared. Because of the low electrical resistivity of the ceramics, it was not possible to perform a typical polariszation hysteresis loop for characterization of ferroelectric properties. Scanning electron microscopy investigations strongly suggest that the reason for the conductivity is found in the impurities/precipitations within the microstructure of the samples. With atomic force microscopy (AFM) in piezoresponse force microscopy (PFM) mode, it is possible to characterize local piezoelectricity by imaging the ferroelectric domains. Neither BCW nor BCZW showed any domain structure. Nevertheless, when local electric fields were applied to the surfaces of the ceramics topographic displacements, imaged with AFM, and surface charges, imaged with Kelvin probe force microscopy (KFM) and PFM, were measured and remained stable on the surface for the time of the experiment. Therefore BCW and BCZW are considered to be electrets and possibly relaxor ferroelectrics.
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Zhang, Zhen, Zhaokuan Wen, Ting Li, Zhiguo Wang, Zhiyong Liu, Xiaxia Liao, Shanming Ke, and Longlong Shu. "Flexoelectric aging effect in ferroelectric materials." Journal of Applied Physics 133, no. 5 (February 7, 2023): 054102. http://dx.doi.org/10.1063/5.0134531.
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In spite of the flexoelectric effect being a universal phenomenon in the ferroelectric perovskites, the current understanding of flexoelectric aging in ferroelectrics is, actually, rather incomplete. In this paper, we have fabricated a series of Mn-doped BaTiO3 perovskite ceramics (BaTi1–xMnxO3, x = 0.1% and 1%, BTMO) to systematically investigate the corresponding flexoelectric aging behavior by controlling the concentration of Mn. We found that the variation of Mn dopant significantly effects the Curie temperature, dielectric constant, flexoelectric aging, and flexoelectric coefficient of the BTMO ceramics. Especially for the BTMO (0.1%) ceramics, obvious ferroelectric aging and flexoelectric aging phenomenon are observed at room temperature. The main reason for aging of BTMO ceramics is that the doping of Mn introduces oxygen vacancies, which tend to be stable under the action of strain gradient and electric field. Therefore, the results presented in this paper verify that the flexoelectric aging in Mn-doped BTO ceramics is closely related to ferroelectric fatigue.
10
Osman, Rozana A. M., Mohd Sobri Idris, Zul Azhar Zahid Jamal, Sanna Taking, Syarifah Norfaezah Sabki, Prabakaran A. L. Poopalan, Mohd Natashah Norizan, and Ili Salwani Mohamad. "Ferroelectric and Relaxor Ferroelectric to Paralectric Transition Based on Lead Magnesium Niobate (PMN) Materials." Advanced Materials Research 795 (September 2013): 658–63. http://dx.doi.org/10.4028/www.scientific.net/amr.795.658.
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First ferroelectric materials were found in Rochelle salt was in a perovskite structure. Lead Magnesium Niobate (PMN) is a perovskites with a formula of PbMg1/3Nb2/3O3 (PMN) and are typical representatives for most of all ferroelectrics materials with relaxor characteristic. It posses high dielectric permittivity which nearly ~ 20,000[ with a broad dielectric permittivity characteristic, known as relaxor ferroelectric below room temperature. Some of the researcher might think that the transition from relaxor ferroelectric to paraelectric is similar to the characteristic as observed from ferroelectric to paraelectric, but it is not necessary. The puzzling is how do we categorise them. How is the domain structure look like typically in ceramic materials.
11
WANG, J. T., C. ZHANG, and Y. S. FU. "FERROELECTRIC/PIEZOELECTRIC MATERIALS AND THEIR APPLICATIONS IN ADVANCED SCIENCES AND TECHNOLOGIES." International Journal of Modern Physics B 19, no. 01n03 (January 30, 2005): 553–57. http://dx.doi.org/10.1142/s021797920502902x.
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This paper is a brief introduction to the ferroelectric materials and their applications. Ferroelectric materials are very intriguing materials to both fundamental science and technologies. Ferroelectricity is an important critical phenomenon in physics. Ferroelectrics possess unique physical properties which make them very useful in electronics, computer memory unit and micro-electro-mechanic devices. The author proposed some interesting possible applications for the near future.
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MA, WENHUI. "FLEXOELECTRIC EFFECT IN FERROELECTRICS." Functional Materials Letters 01, no. 03 (December 2008): 235–38. http://dx.doi.org/10.1142/s179360470800037x.
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Flexoelectric effect and its influence on the application of multifunctional ferroelectrics have been investigated. Theory of flexoelectric coupling has indicated that mechanical strain gradient can impact polarization in a way analogous to electric field. Experimentally, magnitudes of the flexoelectric coefficients have been measured in ferroelectric, incipient ferroelectric and relaxor ferroelectric perovskites. Present data of flexoelectricity suggests that such unconventional electromechanical coupling could make unique contribution to properly engineered ferroelectric thin films and nanostructures. Flexoelectric effect is expected to intensify at small dimensions and get large enough at nanoscale to significantly impact phase transition and functional response in ferroelectrics.
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Zheng, Jun-Ding, Yi-Feng Zhao, Yi-Fan Tan, Zhao Guan, Ni Zhong, Fang-Yu Yue, Ping-Hua Xiang, and Chun-Gang Duan. "Coupling of ferroelectric and valley properties in 2D materials." Journal of Applied Physics 132, no. 12 (September 28, 2022): 120902. http://dx.doi.org/10.1063/5.0112893.
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Two-dimensional (2D) valleytronic materials are both fundamentally intriguing and practically appealing to explore novel physics and design next-generation devices. However, traditional control means such as optic pumping or magnetic field cannot meet the demands of modern electron devices for miniaturization, low-dissipation, and non-volatility. Thus, it is attractive to combine the ferroelectric property with valley property in a single compound. In this paper, the recent progress of ferroelectric-valley coupling is reviewed. First, we briefly recall the development of valleytronics in the past several years. Then, various structures demonstrating ferroelectric-valley coupling, including heterostructures and intrinsic materials, are introduced. Subsequently, we describe ferroelectric-valley coupling in sliding and adsorption system and the unconventional ferroelectricity in the moiré system. Finally, we discuss the research status and outlook. We hope that this perspective will be helpful to bridge the gap between valleytronics and ferroelectrics in 2D materials and inspire further exciting findings.
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de Keijser, M., and G. J. M. Dormans. "Chemical Vapor Deposition of Electroceramic Thin Films." MRS Bulletin 21, no. 6 (June 1996): 37–43. http://dx.doi.org/10.1557/s0883769400046066.
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A nonconventional way of producing nonvolatile memories is to use ferroelectrics, a class of electroceramic materials. These materials have a remanent polarization. The direction of this polarization can be changed by an electric field. Ferroelectric materials possess a “natural memory,” so to speak. Ferroelectrics have been known for a long time, and the idea to use them for binary data storage originates in the 1950s. The basic element of this type of memory is formed by a ferroelectric capacitor—a ferroelectric layer sandwiched between electrodes. Early prototypes were unsuccessful because rather high voltages were needed to switch the ferroelectric capacitor (200–300 V) and the memories suffered from crosstalk. (Programming one particular cell influenced neighboring cells.) The revival of ferroelectric memories was driven by the development of thin-film deposition techniques that allowed the formation of capacitors with ferroelectric thin films of submicron thicknesses. These capacitors can be switched with normal intergrated-circuit (IC) voltages. The crosstalk problem is circumvented by isolating each memory cell by a transistor (similar to a dynamic random-access memory [DRAM]). Compared to “standard” nonvolatile memories, ferroelectric memories offer the advantage of very fast access times (both for reading and writing), low-voltage operation, and good write/read endurance. A ferroelectric material that is already being used in commercially available memories is lead zirconate titanate, PbZrxTi 1−xO3. To combine a ferroelectric material with IC technology is a challenge, and many problems have been (and will be) encountered.
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Zhou, Zhangyang, Zhipeng Gao, Zhengwei Xiong, Gaomin Liu, Ting Zheng, Yuanjie Shi, Mingzhu Xiao, et al. "Giant power density from BiFeO3-based ferroelectric ceramics by shock compression." Applied Physics Letters 121, no. 11 (September 12, 2022): 113903. http://dx.doi.org/10.1063/5.0102102.
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Ferroelectric pulsed-power sources with rapid response time and high output energy are widely applied in the defense industry and mining areas. As the core materials, ferroelectric materials with large remnant polarization and high electrical breakdown field should generate high power under compression. Currently, lead zirconate titanate 95/5 ferroelectric ceramics dominated in this area. Due to environmental damage and limited output power of lead-based materials, lead-free ferroelectrics are highly desirable. Here, the electrical response of 0.9BiFeO3-0.1BaTiO3 (BFO-BT) ferroelectric ceramics under shock-wave compression was reported, and a record-high power density of 4.21 × 108 W/kg was obtained, which was much higher than any existing lead-based ceramics and other available energy storage materials. By in situ high-pressure neutron diffraction, the mechanism of shock-induced depolarization of the BFO-BT ceramics was attributed to pressure-induced structural transformation, and the excellent performance was further elaborated by analyzing magnetic structure parameters under high pressures. This work provides a high-performance alternative to lead-based ferroelectrics and guidance for the further development of new materials.
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Abrahams, S. C. "New ferroelectric inorganic materials predicted in point group 4mm." Acta Crystallographica Section B Structural Science 52, no. 5 (October 1, 1996): 790–805. http://dx.doi.org/10.1107/s0108768196004594.
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The Inorganic Crystal Structure Database containing a total of 209 entries for 128 different materials reported in point group 4 mm, of which eight are for previously known ferroelectrics. Analysis of the remaining entries, assuming the structure determinations reported are correct, leads to the prediction of an additional 43 new ferroelectric materials. 15 were determined in space group P4mm, 11 in P4bm, one in P42 nm, one in P4cc, two in P42 mc, one in P42 bc, seven in I4mm, two in I4cm, one in I41 md and two in I41 cd. Numerous other structures are shown to have been assigned, most likely, to an incorrect space group. All but one of the materials reported in space group P4bm are predicted to be ferroelectric. New ferroelectrics predicted in point group 4 mm include K2[Pt(CN)4]Br0.3.3H2O, Nd0.33TaO3, YBaCuFeO5+δ, Ba2(TiO)(Si2O7), K2(NbO)2(SiO3)4, Ba6CoNb9O30, Sr2SbMnO6, Hg2AlF5.(H2O)2, Rb5Nb3OF18 and SrNi2(VO4)2.
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Lai, Keji. "Spontaneous polarization in van der Waals materials: Two-dimensional ferroelectrics and device applications." Journal of Applied Physics 132, no. 12 (September 28, 2022): 121102. http://dx.doi.org/10.1063/5.0116445.
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The research on two-dimensional (2D) van der Waals ferroelectrics has grown substantially in the last decade. These layered materials differ from conventional thin-film oxide ferroelectrics in that the surface and interface are free from dangling bonds. Some may also possess uncommon properties, such as bandgap tunability, mechanical flexibility, and high carrier mobility, which are desirable for applications in nanoelectronics and optoelectronics. This Tutorial starts by reviewing the theoretical tools in 2D ferroelectric studies, followed by discussing the material synthesis and sample characterization. Several prototypical electronic devices with innovative functionalities will be highlighted. Readers can use this article to obtain a basic understanding of the current status, challenges, and future prospects of 2D ferroelectric materials.
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Mikolajick, Thomas, Stefan Müller, Tony Schenk, Ekaterina Yurchuk, Stefan Slesazeck, Uwe Schröder, Stefan Flachowsky, et al. "Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors." Advances in Science and Technology 95 (October 2014): 136–45. http://dx.doi.org/10.4028/www.scientific.net/ast.95.136.
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Ferroelectrics are very interesting materials for nonvolatile data storage due to the fact that they deliver very low power programming operation combined with nonvolatile retention. For 60 years researchers have been inspired by these fascinating possibilities and have tried to build ferroelectric memory devices that can compete with mainstream technologies in their respective time. The progress of the current concepts is limited by the low compatibility of ferroelectrics like PZT with CMOS processing. Therefore, PZT or SBT based 1T1C ferroelectric memories are not scaling below 130 nm and 1T ferroelectric FETs based on the same materials are still struggling with low retention and very thick memory stacks. Hafnium oxide, a standard material in sub 45 nm CMOS, can show ferroelectric hysteresis with promising characteristics. By adding a few percent of silicon and annealing the films in a mechanically confined manner. Boescke et al. demonstrated ferroelectric hysteresis in hafnium oxide for the first time. Recently, a large number of dopants including Y, Al, Gd and Sr have been used to induce ferroelectricity in HfO2. This paper reviews the current status of hafnium oxide based ferroelectrics, its application to field effect transistors and puts this approach into a wider context of earlier developments in the field.
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Pavlenko, Maksim A., Franco Di Rino, Leo Boron, Svitlana Kondovych, Anaïs Sené, Yuri A. Tikhonov, Anna G. Razumnaya, Valerii M. Vinokur, Marcelo Sepliarsky, and Igor A. Lukyanchuk. "Phase Diagram of a Strained Ferroelectric Nanowire." Crystals 12, no. 4 (March 24, 2022): 453. http://dx.doi.org/10.3390/cryst12040453.
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Ferroelectric materials manifest unique dielectric, ferroelastic, and piezoelectric properties. A targeted design of ferroelectrics at the nanoscale is not only of fundamental appeal but holds the highest potential for applications. Compared to two-dimensional nanostructures such as thin films and superlattices, one-dimensional ferroelectric nanowires are investigated to a much lesser extent. Here, we reveal a variety of the topological polarization states, particularly the vortex and helical chiral phases, in loaded ferroelectric nanowires, which enable us to complete the strain–temperature phase diagram of the one-dimensional ferroelectrics. These phases are of prime importance for optoelectronics and quantum communication technologies.
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Shang, Jing, Congxin Xia, Chun Tang, Chun Li, Yandong Ma, Yuantong Gu, and Liangzhi Kou. "Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers." Nanoscale Horizons 6, no. 12 (2021): 971–78. http://dx.doi.org/10.1039/d1nh00402f.
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Two-dimensional ferroelectrics are core candidates for the development of next-generation non-volatile storage devices, which rely highly on ferroelectric stability and feasible approaches to manipulate the ferroelectric polarization and domain.
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Randall, C. A. "Structural-property relations in ferroelectric-based materials." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 548–49. http://dx.doi.org/10.1017/s0424820100170475.
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Ferroelectric and related materials are gaining importance owing to the wide variety of phenomena associated with ferroelectricity. This includes high dielectric permittivity, electrostriction, pyroelectricity, and piezoelectricity. Applications using these properties are continually requiring higher performance of the materials. Therefore, there exists a need to understand the structuralproperty relations of ferroelectrics as a means to optimize their design.Transmission electron microscopy (TEM) techniques are beginning to provide quantitative and qualitative information on the mesoscopic structures, local crystallography, and chemistry of ferroelectric materials. This paper will consider three examples in which TEM methods have been successfully used to prepare higher performance materials and/or a deeper understanding of the role of mesoscopic structures on the physical dielectric characteristics.The first example demonstrates the importance of intermediate scale B-site chemical ordering within the complex lead perovskite lattice and the associated observation of relaxor behavior. Figure 1 shows a typical dark field electron micrograph of B-site order domains in Pb(Mg1/3Nb2/3)O3.
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Kho, Wonwoo, Hyunjoo Hwang, Jisoo Kim, Gyuil Park, and Seung-Eon Ahn. "Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures." Nanomaterials 13, no. 3 (January 21, 2023): 439. http://dx.doi.org/10.3390/nano13030439.
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Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroelectrics are promising non-volatile memory materials because of their ability to maintain polarization, even when an external electric field is removed. Recently, it has been reported that HfO2 thin films compatible with complementary metal–oxide–semiconductor (CMOS) processes exhibit ferroelectricity even at a thickness of less than 10 nm. Among the ferroelectric-based memories, ferroelectric tunnel junctions are attracting attention as ideal devices for improving integration and miniaturization due to the advantages of a simple metal–ferroelectric–metal two-terminal structure and low ultra-low power driving through tunneling. The FTJs are driven by adjusting the tunneling electrical resistance through partial polarization switching. Theoretically and experimentally, a large memory window in a broad coercive field and/or read voltage is required to induce sophisticated partial-polarization switching. Notably, antiferroelectrics (like) have different switching properties than ferroelectrics, which are generally applied to ferroelectric tunnel junctions. The memory features of ferroelectric tunnel junctions are expected to be improved through a broad coercive field when the switching characteristics of the ferroelectric and antiferroelectric (like) are utilized concurrently. In this study, the implementation of multiresistance states was improved by driving the ferroelectric and antiferroelectric (like) devices in parallel. Additionally, by modulating the area ratio of ferroelectric and antiferroelectric (like), the memory window size was increased, and controllability was enhanced by increasing the switchable voltage region. In conclusion, we suggest that ferroelectric and antiferroelectric (like) parallel structures may overcome the limitations of the multiresistance state implementation of existing ferroelectrics.
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Leach, Sarah, and R. Edwin Garcia. "Microstructural Modeling of Ferroelectric Materials: State of the Art, Challenges and Opportunities." Materials Science Forum 606 (October 2008): 119–34. http://dx.doi.org/10.4028/www.scientific.net/msf.606.119.
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In the last ten years of ongoing research in the modeling of polycrystalline ferroelectric ceramics a myriad of analytical and numerical implementations have emerged to predict and support the engineering of ferroelectrics in both its single-crystal and polycrystalline forms. Traditional atomistic approaches capture the intrinsic behaviors, and have led to great improvements in the chemistries of these systems. Similarly, macroscopic engineering approaches have focused on the development of phenomenological descriptions that capture the empirical static and time-independent behavior. At the interface of these two apparently divorced approaches, thermodynamic-based microstructural evolution descriptions inspired in phase field models have risen as the necessary link between the atomic and macroscopic levels. This new and emerging methodology starts from the predicted behaviors given by their atomic counter-parts, and resolves the effects of grain boundaries, and de-convolves the grain-grain mesoscopic interactions. Much of the future of ferroelectrics lies in the delivery of improved chemistries and microstructures, and on bridging the understanding currently existing atomistic and continuum descriptions. Overall, it is expected that current and emerging technological challenges will be the driving force to minimize ferroelectric fatigue and realize lead-free materials with performances close to currently existing (lead containing) ones. Moreover, it is expected that while an accurate understanding of the intrinsic properties of materials are key to define improved ferroelectric solids, it will be the detailed understanding of the extrinsic response of ferroelectric materials, in both bulk and thin film form, that will take these materials to reach the highest performances possible.
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Shimizu, Takao, Hiroshi Funakubo, and Naoki Ohashi. "(Invited, Digital Presentation) Materials Aspects of New Ferroelectrics with Simple Crystal Structure." ECS Meeting Abstracts MA2022-02, no. 15 (October 9, 2022): 804. http://dx.doi.org/10.1149/ma2022-0215804mtgabs.
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Ferroelectric materials are defined as the materials, of which spontaneous polarization can be switched by an external electric field. Their crystal structural symmetry makes them exhibit a variety of electric properties, such as piezoelectricity, pyroelectricity, and ferroelectricity. Because of their characteristics, they are expected to be adapted for various applications, including sensors, actuators, and non-volatile memories. Over the past decades, perovskite type ferroelectric materials have occupied the central position in both fundamental studies and applications of ferroelectric materials. On the other hand, there are a few studies on ferroelectrics with other crystal structures. This regime is now changing since HfO2-based new ferroelectric materials have been discovered. The HfO2-based dielectric materials are employed as high-k insulators of the metal-oxide-semiconductor field-effect-transistors instead of the conventional SiOx gate dielectrics, suggesting the high compatibility with semiconductor technologies. Thus, discovering ferroelectricity in HfO2-based materials strongly encourages us to develop highly integrated ferroelectric devices that are difficult to fabricate with traditional perovskite-type ferroelectrics. Amid increasing interest in ferroelectric materials, ferroelectricity is demonstrated on another new (Al, Sc)N, which has a wurtzite structure. Both fluorite structure, the parent structure of HfO2-based ferroelectrics, and wurtzite structure are simple compounds, having only a single anion and cation sites in the crystal structure. This feature contrasts the complex crystal structure of conventional perovskite structure. This presentation will give a brief outline of these new ferroelectric materials and introduce our recent studies from the viewpoint of crystal chemistry. It is well-known that HfO2 undergoes successive phase transitions from monoclinic to tetragonal and tetragonal to cubic phases. However, these phases cannot show ferroelectricity because of their inversion center in the crystal structure. It is widely accepted that the ferroelectricity in HfO2-based materials originates from the metastable orthorhombic structure. This orthorhombic structure was confirmed by the convergence electron diffraction and scanning transmission electron microscopy. Among the HfO2-based materials, HfO2- ZrO2 materials are most extensively studied. However, the thickness that can exhibit ferroelectricity in these materials is limited to less than 50 nm because of their strong preference for the monoclinic structure. In order to investigate structural features of the HfO2-based materials, materials are demanded that have ferroelectricity over the wide thickness range. The Y-doped HfO2 meets the requirement, allowing us to grow the ferroelectric film over 1 μm in thickness. Furthermore, we demonstrated ferroelectricity in epitaxial films using this composition. A recent report on ferroelectricity in bulk single-crystal also employed the Y-doped HfO2 system. The ferroelectricity in the wurtzite structure has been discussed for a long time. Moriwake et al. put forward giant spontaneous polarization in wurtzite materials by calculation based on density functional theory. The proposed mechanism of polarization reversal is accompanied by the change in the outermost surface, namely a cation surface to an anion surface and vice versa. Such large polarization was demonstrated in (Al1-x Scx)N films by Fitchtner et al. They also confirmed the change in the surface by performing chemical etching. In addition to (Al1-x Scx)N films, the ferroelectricity has been confirmed in (Al1-x B x )N, (Ga1-x Sc x )N, and (Zn1-x Mg x )O. For the wurtzite structure, we can consider the virtual paraelectric BN phase, in which both anions and cations are located in the same plane. As the paraelectric phase is deemed an intermediate state during polarization reversal, easy polarization reversal is expected as the u-parameter of the wurtzite structure approaches 0.5. It is considered that the u parameter is closely related to the axial ratio of the c- and a-axes. In fact, the reduction of coercive field and remanent polarization is ascertained experimentally. The “simple compound” ferroelectrics have attracted much attention due to their unique features, e.g., outstanding compatibility to semiconductor technologies in HfO2-based materials and giant remanent polarization in wurtzite materials. However, quite a large coercive field compared to conventional ferroelectrics reduces the reliability of the devices, particularly endurance properties. Further studies and developments to unveil microstructures under and after applying a strong electric field will lead to the next application of these ferroelectrics.
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Jiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, and Jianlu Wang. "Ferroelectric field effect transistors for electronics and optoelectronics." Applied Physics Reviews 10, no. 1 (March 2023): 011310. http://dx.doi.org/10.1063/5.0090120.
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Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetectors, and smart sensors. In this review, representative research results of FeFETs are reviewed from the perspective of structures and applications. Here, the background and significance of ferroelectrics and FeFETs are given. Furthermore, methods of building FeFETs in different structures and physical models describing the characteristics of FeFET are introduced. Important applications of FeFETs in electronics and optoelectronics are presented, with a comparison of performance between FeFETs and FETs without ferroelectrics, including memories and memristive devices, photodetectors, negative capacitance FETs, sensors, and multifunctional devices. Finally, based on the above discussions, promising applications and challenges of FeFETs are summarized.
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Wang, Jun, Jing Lou, Jia Fu Wang, Shao Bo Qu, Hong Liang Du, and Tie Jun Cui. "Ferroelectric composite artificially-structured functional material: multifield control for tunable functional devices." Journal of Physics D: Applied Physics 55, no. 30 (April 4, 2022): 303002. http://dx.doi.org/10.1088/1361-6463/ac5e8b.
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Abstract Artificially-structured functional materials (AFMs) are artificial media that combine the advantages of nature materials and artificial structures to produce excellent and unexpected properties. Ferroelectric materials have key features in possessing spontaneous polarizations, which can be switched by using electric field, temperature, and strain. This review article attempts to provide a comprehensive insight into the current development of ferroelectric composite AFMs, and to introduce a developing subject in realizing multifield controls for tunable functional devices. Some typical ferroelectric materials and their multifield tunable mechanisms are summarized in detail. The incorporation of ferroelectric materials can yield various designs of AFMs to modulate electromagnetic waves. Recent progress of typical designs with different tuning strategies for active AFMs are illustrated and compared, including the metamaterials, metasurfaces, heterojunctions, superlattices, and their hybrid designs. This scientific subject involves interesting research topics of electromagnetism, electronics, optoelectronics, and ferroelectrics, which is significant to bring novel functionalities via multifield controls.
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Sidorkin, A. S., B. M. Darinskii, S. D. Milovidova, L. N. Korotkov, and G. S. Grigoryan. "Effect of the Component Interaction on the Phase Transitions and Dielectric Properties of Ferroelectric Composites." Кристаллография 68, no. 5 (September 1, 2023): 832–40. http://dx.doi.org/10.31857/s0023476123600519.
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The dielectric properties of ferroelectric composites and the specific features of the phase transitions occurring in them are discussed in comparison with the homogeneous ferroelectrics incorporated in the composites studied. The components incorporated into the dielectric matrix of ferroelectrics are considered to be triglycine sulfate, single crystals of potassium dihydrogen phosphate group, sodium nitrite, and perovskite-type materials. The factors changing the temperature range of polar phase existence in the ferroelectric composites under consideration are revealed and discussed. The results of the studies performed in this field are briefly reviewed. The work with the ferroelectric components incorporated into the aforementioned composites was performed in cooperation and under the guidance of L.A. Shuvalov.
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Celano, Umberto, Mihaela Popovici, Karine Florent, Simone Lavizzari, Paola Favia, Kris Paulussen, Hugo Bender, Luca di Piazza, Jan Van Houdt, and Wilfried Vandervorst. "The flexoelectric effect in Al-doped hafnium oxide." Nanoscale 10, no. 18 (2018): 8471–76. http://dx.doi.org/10.1039/c8nr00618k.
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After the observation of ferroelectric HfO2, interest in ferroelectric-based nanoelectronics has been renewed. However, ferroelectrics also show coupling between the electrical polarization and the deformation gradient, defined as flexoelectricity. Here we show the flexoelectric effect in Al-doped hafnium oxide.
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EICHEL, RÜDIGER-A., and HANS KUNGL. "RECENT DEVELOPMENTS AND FUTURE PERSPECTIVES OF LEAD-FREE FERROELECTRICS." Functional Materials Letters 03, no. 01 (March 2010): 1–4. http://dx.doi.org/10.1142/s179360471000097x.
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Lead-free ferroelectric materials are currently subject to extensive research activities owing to environmental concerns and corresponding legislation which point to substitute lead-based ferroelectric materials. The paper provides an overview on recent research activities and trends in the field of lead-free ferroelectrics. The current work is grouped by contributions to atomistic-scale analysis of lead-free materials, structure and phase formation, micro structure and dopant effects on piezoelectric properties. The results and challenges to research in these fields are briefly sketched; so a framework is provided in which the contributions of the present topical issue to the major topics in lead-free ferroelectrics are related. The contributions in this issue are listed in Refs. 63–77. Finally, the current status of research and technology on lead-free materials is summarized.
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Chen, Zibin, Fei Li, Qianwei Huang, Fei Liu, Feifei Wang, Simon P. Ringer, Haosu Luo, Shujun Zhang, Long-Qing Chen, and Xiaozhou Liao. "Giant tuning of ferroelectricity in single crystals by thickness engineering." Science Advances 6, no. 42 (October 2020): eabc7156. http://dx.doi.org/10.1126/sciadv.abc7156.
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Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectricity in nanoscale materials induced by surface strain. We discovered that sample thickness plays a critical role in tailoring the domain switching behavior and ferroelectric properties of single-crystal ferroelectrics, arising from the huge surface strain and the resulting surface reconstruction. Our results provide important insights in tuning polarization/domain of single-crystal ferroelectric via sample thickness engineering.
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Zhao, Xiaofang, and A. K. Soh. "Piezoelectric properties of rhombohedral ferroelectric materials with phase transition." Functional Materials Letters 08, no. 03 (June 2015): 1540008. http://dx.doi.org/10.1142/s1793604715400081.
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The temporal evolution of domain structure and its piezoelectric behavior of ferroelectric material BaTiO 3 during the transition process from rhombohedral to tetragonal phase under an applied electric field have been studied by employing Landau–Ginzburg theory and the phase-field method. The results obtained show that, during the transformation process, the intermediate phase was monoclinic MA phase, and several peak values of piezoelectric coefficient appeared at the stage where obvious change of domain pattern occurred. In addition, by comparing the cases of applied electric field with different frequencies, it was found that the maximum piezoelectric coefficient obtained decreased with increasing frequency value. These results are of great significance in tuning the properties of engineering domains in ferroelectrics, and could provide more fundamentals to the design of ferroelectric devices.
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Whittle, Thomas, and Siegbert Schmid. "Diffraction Studies of Tungsten Bronze Type Relaxor Ferroelectrics." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C78. http://dx.doi.org/10.1107/s2053273314099215.
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Ferroelectric materials are essential for modern electronic applications, from consumer electronics to sophisticated technical instruments. Relaxor ferroelectric materials provide the advantage of high dielectric constants over broad temperature ranges not seen in traditional ferroelectrics. Tungsten bronze type compounds have been shown to display a variety of industrially relevant optical and electronic properties amongst others. There is a fundamental relationship between the physical properties displayed by ferroelectrics and the crystal structures in which they form. Of particular interest are compositions and temperatures near phase transition. These are import because near phase transitions, particularly morphotropic phase transitions, electromechanical properties are often dramatically enhanced. [1,2] This work focuses on the structural investigation of the tungsten bronze type relaxor ferroelectric materials in the BaxSr3-xTi1-yZryNb4O15 (0 ≤ x ≤ 3; 0 ≤ y ≤ 1) system. A combination of X-ray, neutron (ToF and constant wavelength) and electron diffraction were employed to map the entire room temperature phase space. In addition, morphotropic phase boundary compositions were determined accurately. Variable temperature synchrotron X-ray diffraction studies were utilised to further explore the phase diagram for non-ambient conditions. Temperature dependent phase transitions were determined and the relationship between composition and transition temperature analysed. Structural models used in this work resulted from Rietveld refinements against powder diffraction data. [3] This work will shed light on new lead free relaxor ferroelectric materials.
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Shafir, Or, and Ilya Grinberg. "Narrow bandgap potassium titanate-molybdate-based d0 ferroelectrics." Journal of Applied Physics 132, no. 7 (August 21, 2022): 074101. http://dx.doi.org/10.1063/5.0099143.
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The bulk photovoltaic effect observed in ferroelectric materials can enable photovoltaic performance beyond the Shockley–Queisser limit of efficiency. This requires the use of ferroelectrics with strong polarization and low bandgap ( Eg) that are typically contradictory in the common perovskite oxides ferroelectrics. Here, we use first-principles calculations to study the KNbO3–K(Ti0.5Mo0.5)O3 (KNTM) solid solutions as possible narrow-gap ferroelectric materials. KTM, the end-member of the recently discovered KNTM solid solution system, maintains a ferroelectric polarization similar to that of other K-based systems due to its d0 configuration at the B-site. The substitution of Nb in KTM reduces Eg from 2.9 of KTM to 1.83 eV for an unstrained system and 1.7 eV for a compressively strained system, while maintaining ferroelectricity. The combination of narrow Eg, strong ferroelectricity, low toxicity, and abundance of the constituent elements make Nb-substituted KTM a promising candidate material for photoferroelectric applications.
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Ke, Changming, Jiawei Huang, and Shi Liu. "Two-dimensional ferroelectric metal for electrocatalysis." Materials Horizons 8, no. 12 (2021): 3387–93. http://dx.doi.org/10.1039/d1mh01556g.
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Two dimensional ferroelectrics with out-of-plane polarization can be engineered via layer stacking to a genuine ferroelectric metal. These 2D ferroelectrics can serve as electrically-tunable, high-quality switchable electrocatalysts.
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Mistewicz, Krystian. "Recent Advances in Ferroelectric Nanosensors: Toward Sensitive Detection of Gas, Mechanothermal Signals, and Radiation." Journal of Nanomaterials 2018 (November 25, 2018): 1–15. http://dx.doi.org/10.1155/2018/2651056.
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A spontaneous polarization that occurs below the Curie temperature is characteristic for ferroelectric materials. This polarization is sensitive to many external conditions such as an electric field, mechanical deformation, temperature, and chemical and biological factors. Therefore, bulk ferroelectric materials have been used for decades in sensors and actuators. Recently, special attention has been paid to ferroelectric nanostructures that represent better sensing properties than their bulk counterparts. This paper presents a comprehensive survey of applications of nanoferroelectrics in different types of sensors, e.g., gas sensors and piezoelectric, pyroelectric, and piezoresistive sensors of mechanothermal signals, as well as photodetectors, ionizing radiation detectors, and biosensors. The recent achievements and challenges in these fields are summarized. This review also outlines the prospects for future development of sensors based on nanosized ferroelectrics.
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Wang, Luyi, Jinhong Cheng, Ke Qu, Qingfeng Zhu, Bobo Tian, and Zhenzhong Yang. "Aluminum-Nitride-Based Semiconductors: Growth Processes, Ferroelectric Properties, and Performance Enhancements." Inorganics 13, no. 2 (January 21, 2025): 29. https://doi.org/10.3390/inorganics13020029.
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Aluminum nitride (AlN)-based ferroelectric films offer significant advantages, including compatibility with CMOS back-end processes, potential for sustainable miniaturization, and intrinsic stability in the ferroelectric phase. As promising emerging materials, they have attracted considerable attention for their broad application potential in nonvolatile ferroelectric memories. However, several key scientific and technological challenges remain, including the preparation of single-crystal materials, epitaxial growth, and doping, which hinder their progress in critical ferroelectric devices. To accelerate their development, further research is needed to elucidate the underlying physical mechanisms, such as growth dynamics and ferroelectric properties. This paper provides a comprehensive review of the preparation methods of AlN-based ferroelectric films, covering AlN, Al1−xScxN, Al1−xBxN, YxAl1−xN, and ScxAlyGa1−x−yN. We systematically analyze the similarities, differences, advantages, and limitations of various growth techniques. Furthermore, the ferroelectric properties of AlN and its doped variants are summarized and compared. Strategies for enhancing the ferroelectric performance of AlN-based films are discussed, with a focus on coercive field regulation under stress, suppression of leakage current, fatigue mechanism, and long-term stability. Then, a brief overview of the wide range of applications of AlN-based thin films in electronic and photonic devices is presented. Finally, the challenges associated with the commercialization of AlN-based ferroelectrics are presented, and critical issues for future research are outlined. By synthesizing insights on growth methods, ferroelectric properties, enhancement strategies, and applications, this review aims to facilitate the advancement and practical application of AlN-based ferroelectric materials and devices.
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Ren, Lingling, and Baojuan Dong. "Ferroelectric Polarization in an h-BN-Encapsulated 30°-Twisted Bilayer–Graphene Heterostructure." Magnetochemistry 9, no. 5 (April 26, 2023): 116. http://dx.doi.org/10.3390/magnetochemistry9050116.
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Recently, the emergent two-dimensional (2D) ferroelectric materials have provided new possibilities for the miniaturization of ferroelectric systems and the integration of novel 2D nano-electronic devices. In addition to the intrinsic ferroelectrics exfoliated from bulk, 2D heterostructures hybridized from electrically non-polarized van der Waals (vdW) materials have also been proven to be a promising platform for the construction of ferroelectricity. Here, we report 30° twisted bilayer–graphene (TBLG) incommensurate moiré superlattice encapsulated by hexagonal boron nitride (h-BN), in which robust hysteretic resistance was detected at the top interface between h-BN and the TBLG from room temperature down to 40 mK. The hysteretic phenomenon can be understood by the extra carrier induced by the interfacial 2D ferroelectric polarization, which is estimated to be around 0.7 pC/m. Our work of interfacial ferroelectric heterostructure achieved by a TBLG/h-BN hybrid system expands the 2D ferroelectric families and opens more possibilities for future coupling the ferroelectricity with rich electronic and optical properties in vdW twistronic devices.
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Chouprik, Anastasia, Dmitrii Negrov, Evgeny Y. Tsymbal, and Andrei Zenkevich. "Defects in ferroelectric HfO2." Nanoscale 13, no. 27 (2021): 11635–78. http://dx.doi.org/10.1039/d1nr01260f.
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Following introduction to defects in classical ferroelectrics as well as in dielectric HfO2, this review covers recent experimental results on the impact of defects in ferroelectric HfO2 on its functional properties and resulting performance of memory devices.
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Patrusheva, Tamara, Sergey Petrov, Ludmila Drozdova, and Aleksandr Shashurin. "FERROELECTRICS IN ACOUSTOELECTRONICS." VOLUME 39, VOLUME 39 (2021): 217. http://dx.doi.org/10.36336/akustika202139217.
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Аcoustoelectronics is one of the areas of acoustics, associated with the use of mechanical resonance effects and the piezoelectric effect, as well as the effect based on the interaction of electric fields with waves of acoustic stresses in a piezoelectric material. The main materials used in acoustoelectronics are ferroelectrics, which are mainly complex oxide materials. This article discusses the possibility of increasing the purity and homogeneity of ferroelectric materials, as well as softening the regimes of their synthesis using the solution extraction-pyrolytic method. It is shown that the synthesis temperatures of BaTiO3, SrTiO3, and Pb(Zr)TiO3 ferroelectric films are reduced to 550-600°C, and the synthesis time is down to 5-10 minutes. The dielectric constant and Curie temperature values correspond to the maximum characteristics for these materials. Thus, using the extraction-pyrolytic method we obtained suitable for use in acoustoelectronic technology ferroelectric films.
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BAGAYOKO, D., and G. L. ZHAO. "PREDICTIVE AB-INITIO COMPUTATIONS OF PROPERTIES OF FERROELECTRIC MATERIALS." International Journal of Modern Physics B 13, no. 29n31 (December 20, 1999): 3767–73. http://dx.doi.org/10.1142/s0217979299003891.
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We present a newly developed, ab-initio, self-consistent procedure for predictive calculations of electronic and related properties of ferroelectric materials. Known as the Bagayoko, Zhao, amd Williams (BZM) procedure, this approach resolves the long-standing disagreement between experimental and theoretical conduction bands, in general, and band gaps, in particular, for ferroelectrical materials and other semiconductors. We discuss applications to tetragonal BaTiO 3 and implications for molecules and band-gap engineering as well as the nuclear shell model.
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Lomenzo, Patrick D., Ruben Alcala, Monica Materano, Claudia Richter, Thomas Mikolajick, and Uwe Schroeder. "(Invited) Advances in Atomic Layer Processing of Hafnia-Zirconia Ferroelectrics." ECS Meeting Abstracts MA2022-02, no. 31 (October 9, 2022): 1135. http://dx.doi.org/10.1149/ma2022-02311135mtgabs.
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The limits of integrating ferroelectric materials on commercial semiconductor chips were demolished the moment ferroelectricity in hafnia and zirconia films was reported in 2011. This breakthrough moment in the history of ferroelectric materials was made possible by the fortuitous interplay between advances in atomic layer processing and the strong surface energy dependence of crystal phases in HfO2 and ZrO2. Aided by commercial investment in using both materials as high-k gate and DRAM dielectric materials, atomic layer deposition (ALD) processes are beginning to take full advantage of the completely solid-soluble hafnia-zirconia (Hf1-xZrxO2) ferroelectric system with new precursors and new insights obtained by systematically evaluating film growth conditions. The capability to precisely adjust the compositional profile and to alter oxidation conditions during atomic layer deposition film growth are giving an unprecedented level of control to engineer Hf1-xZrxO2 and doped HfO2 thin films for ferroelectric applications. The latest advances in atomic layer processing of Hf1-xZrxO2 and doped-HfO2 are presented where the dynamic interaction between composition and film growth conditions provide an engineering roadmap to adjust the physical and structural properties of the dielectric films. Metal precursors play a crucial role in the ensuing film properties. The adjustability of the electrical and structural properties of Hf1-xZrxO2 with ozone exposure during ALD film growth is discussed with respect to the important role oxygen and oxygen vacancies have in the overall phase stability of these novel ferroelectric materials, as well as C incorporation caused by ALD precursors. Just as atomic layer deposition has proven to be instrumental in the discovery and stabilization of the ferroelectric phase in HfO2-based thin films, atomic layer etching (ALE) of HfO2/ZrO2-based layers is now being used to preserve ferroelectricity while pushing the thickness dimension to new limits, yielding high performance films for ferroelectric tunnel junction applications. Further innovations in atomic layer processing will continue to be a harbinger of high performance ferroelectrics in the coming years based on the current status and future outlook for ferroelectric Hf1-xZrxO2 and other emerging ferroelectric materials.
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Schmid, H. "Magnetic ferroelectric materials." Bulletin of Materials Science 17, no. 7 (December 1994): 1411–14. http://dx.doi.org/10.1007/bf02747238.
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Wang, Ping, Ding Wang, Shubham Mondal, Mingtao Hu, Jiangnan Liu, and Zetian Mi. "Dawn of nitride ferroelectric semiconductors: from materials to devices." Semiconductor Science and Technology, February 1, 2023. http://dx.doi.org/10.1088/1361-6641/acb80e.
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Abstract III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-generation semiconductor and quantum technologies. The recent experimental demonstration of ferroelectricity in nitride materials, including ScAl(Ga)N, BAlN, and hBN, has inspired tremendous research interest. Due to the large remnant polarization, high breakdown field, high Curie temperature, and significantly enhanced piezoelectric, linear, and nonlinear optical properties, nitride ferroelectric semiconductors have enabled a wealth of applications in electronic, ferroelectronic, acoustoelectronic, optoelectronic, and quantum devices and systems. In this review, the development of nitride ferroelectric semiconductors from materials to devices is discussed. While expounding on the unique advantages and outstanding achievements of nitride ferroelectrics, the existing challenges and promising prospects have been also discussed.
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Wang, Hong, Yusong Tang, Xu Han, Jialiang Yang, Xin Zhang, and Xiaobing Yan. "The evolution of 2D vdW ferroelectric materials: Theoretical prediction, experiment confirmation, applications." Applied Physics Reviews 11, no. 2 (June 1, 2024). http://dx.doi.org/10.1063/5.0172353.
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Since J. Valasek first discovered ferroelectric materials in 1920, researchers have been exploring continuously in various fields through theory and experiments. With the rapid development of the computing technology, energy efficiency and size requirements of semiconductor devices are becoming increasingly demanding. However, the conventional ferroelectric materials, which have been limited by physical size restrictions, can no longer satisfy the above requirements. Two-dimensional (2D) ferroelectric materials can effectively overcome the size limitation of traditional ferroelectrics due to the weak van der Waals force between layers, which is easy to thin while retaining their own unique properties. Currently, a small number of 2D materials have been proved to be ferroelectric properties by experiments and have shown great application potential in nanoscale electrical and optoelectronic devices, expected to become the leaders of next-generation computing. In this review, the current 2D ferroelectric materials are summarized and discussed in detail from seven aspects: theoretical prediction, fabrication methods, ferroelectric characterization methods, principles of typical 2D ferroelectrics, optimization methods of ferroelectric performance, application, and challenges. Finally, the development of 2D ferroelectric materials looks into the future.
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Fan, Zhiwei, Jingyuan Qu, Tao Wang, Yan Wen, Ziwen An, Qitao Jiang, Wuhong Xue, Peng Zhou, and Xiaohong Xu. "Recent Progress on Two-Dimensional Ferroelectrics: Material Systems and Device Applications." Chinese Physics B, November 2, 2023. http://dx.doi.org/10.1088/1674-1056/ad08a4.
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Abstract Ferroelectrics are a kind of material with polar structure and the polarization direction can be inverted reversibly by applying electric field. They have attracted tremendous attention for their extensive applications in nonvolatile memory, sensors and neuromorphic computing. However, the conventional ferroelectric materials face insulating and interfacial issues in the commercialization process. In contrast, two-dimensional (2D) ferroelectric materials usually have excellent semiconductor performance, clean van der Waals interfaces and robust ferroelectric order in atom-thick layers, which holds greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory. Recently, 2D ferroelectrics have obtain impressive breakthroughs, showing overwhelming superiority. Herein, firstly, the progress of experimental research on 2D ferroelectric materials is reviewed. Then, the preparation of 2D ferroelectric devices and their applications are discussed. Finally, the future development trend of 2D ferroelectrics is prospected.
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Hirai, Daisuke, Tomoki Murata, and Sakyo Hirose. "Accelerating ferroelectric materials discovery through high-throughput first-principles screening and experimental validation." Japanese Journal of Applied Physics, July 9, 2024. http://dx.doi.org/10.35848/1347-4065/ad60d0.
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Abstract We conducted high-throughput screening of ferroelectrics using first-principles calculations based on an existing crystal structure database. We focused on nonpolar structures with polar instability, to efficiently screen materials for their potential to undergo ferroelectric phase transitions from oxide materials in crystal structure databases. Our screening criteria included computational feasibility (excluding partial occupation), the absence of hazardous elements, and a maximum of 250 atoms in the conventional cell. Through this screening, we identified 47 ferroelectric candidates, 8 of which have already been reported as ferroelectrics. To validate our screening approach, we synthesized and evaluated several candidate materials with Dion-Jacobson-type structures and measured their dielectric and ferroelectric properties. Although the ferroelectric behavior was not initially identified in these materials, our experiments confirmed their properties. 
Finally, we discovered a new ferroelectric material, CsCa2Nb3O10, which exhibited a ferroelectric phase transition at 28 K, clearly demonstrating the effectiveness of our screening strategy.
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Zhang, Yan‐Fang, Hao Guo, Yongqian Zhu, Shunuo Song, Xudan Zhang, Wanhao Luo, Yu‐Yang Zhang, and Shixuan Du. "Emerging Multifunctionality in 2D Ferroelectrics: A Theoretical Review of the Interplay With Magnetics, Valleytronics, Mechanics, and Optics." Advanced Functional Materials, August 28, 2024. http://dx.doi.org/10.1002/adfm.202410240.
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Abstract2D ferroelectric materials present promising applications in information storage, sensor technology, and optoelectronics through their coupling with magnetics/valleytronics, mechanics, and optics, respectively. The integration of 2D ferroelectrics with magnetism enhances data storage density in memory devices by enabling electric‐field‐controlled magnetic states. Ferroelectric‐valley coupling holds promise for high‐speed, low‐energy electronics by leveraging the electrical control of valley polarization. Ferroelectric‐strain coupling results in various polar topologies, with potential applications in high‐density data storage technologies and sensor devices. Moreover, the coupling between ferroelectrics and optics facilitates the development of nonlinear photonics based on ferroelectric materials. This review summarizes the latest theoretical progress in the coupling mechanisms, including the Dzyaloshinskii‐Moriya‐interaction‐induced magnetoelectric coupling, symmetry‐linked ferroelectric‐valley coupling, ferroelectric‐strain‐coupling‐generated polar topologies, and second‐harmonic generation through ferroelectric‐light interactions. The current challenges and future opportunities in harnessing the coupling in 2D ferroelectric materials for multifunctional applications are provided.
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Wang, Liyao, Guodong Sun, and Shuoguo Yuan. "Chemical Vapor Deposition Growth of 2D Ferroelectric Materials for Device Applications." Advanced Materials Technologies, March 10, 2024. http://dx.doi.org/10.1002/admt.202301973.
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Abstract2D ferroelectric materials have garnered extensive attention for promising applications in next‐generation electronic devices, which provides a platform to explore ferroelectricity without the critical thickness constraint of traditional perovskite oxide‐based ferroelectric materials. Recent studies have shown that chemical vapor deposition (CVD) can synthesis the large‐area 2D ferroelectric materials, making the 2D ferroelectric materials to be compatible with scalable semiconductor devices. In this Review, the CVD‐grown 2D ferroelectric materials are summarized in terms of materials, properties to devices application view. First, the synthesis strategy and recent advances of the CVD growth of 2D ferroelectric materials are highlighted in the aspects of diverse groups of 2D materials. Second, the recent experimental progress of 2D ferroelectric devices is introduced, and the potential applications of 2D ferroelectric devices are discussed. The availability of the CVD‐grown 2D ferroelectrics provides an abundant playground for not only deep studying the ferroelectric properties, but also conceiving various device applications. Lastly, the perspectives are provided to address the current challenges in terms of materials design, physics mechanism, device, and multifunctional application.
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Gale, Samuel D., Harry J. Lloyd, Louise Male, Mark R. Warren, Lucy K. Saunders, Paul A. Anderson, and Hamish H. M. Yeung. "Materials discovery and design limits in MDABCO perovskites." CrystEngComm, 2022. http://dx.doi.org/10.1039/d2ce00848c.
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Wang, Na, Ze-Jiang Xu, Hao-Fei Ni, Wang Luo, Hua-Kai Li, Mei-Ling Ren, Chao Shi, et al. "Molecular Engineering Regulation Achieving Out‐of‐Plane Polarization in Rare‐Earth Hybrid Double Perovskites for Ferroelectrics and Circularly Polarized Luminescence." Angewandte Chemie International Edition, July 3, 2024. http://dx.doi.org/10.1002/anie.202409796.
Full textAbstract:
Out‐of‐plane polarization is a highly desired property of two‐dimensional (2D) ferroelectrics for application in vertical sandwich‐type photoferroelectric devices, especially in ultrathin ferroelectronic devices. Nevertheless, despite great advances that have been made in recent years, out‐of‐plane polarization remains unrealized in the 2D hybrid double perovskite ferroelectric family. Here, from our previous work 2D hybrid double perovskite HQERN ((S3HQ)4EuRb(NO3)8, S3HQ = S‐3‐hydroxylquinuclidinium), we designed a molecular strategy of F‐substitution on organic component to successfully obtain FQERN ((S3FQ)4EuRb(NO3)8, S3FQ = S‐3‐fluoroquinuclidinium) showing circularly polarized luminescence (CPL) response. Remarkably, compared to the monopolar axis ferroelectric HQERN, FQERN not only shows multiferroicity with the coexistence of multipolar axis ferroelectricity and ferroelasticity but also realizes out‐of‐plane ferroelectric polarization and a dramatic enhancement of Curie temperature of 94 K. This is mainly due to the introduction of F‐substituted organic cations, which leads to a change in orientation and a reduction in crystal lattice void occupancy. Our study demonstrates that F‐substitution is an efficient strategy to realize and optimize ferroelectric functional characteristics, giving more possibility of 2D ferroelectric materials for applications in micro‐nano optoelectronic devices.