Log in

Relevant bibliographies by topics / Field Dependence of Carrier Mobility / Journal articles

To see the other types of publications on this topic, follow the link: Field Dependence of Carrier Mobility.

Journal articles on the topic 'Field Dependence of Carrier Mobility'

Author: Grafiati

Published: 7 June 2025

Last updated: 2 August 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Field Dependence of Carrier Mobility.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Tripathi, Durgesh C., K. Sudheendra Rao, Sunil Kumar, and Y. N. Mohapatra. "Impact of device structure on field dependence of carrier mobility." Synthetic Metals 278 (August 2021): 116835. http://dx.doi.org/10.1016/j.synthmet.2021.116835.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Popov, V. P., and M. A. Ilnitsky. "Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs." Advanced Materials Research 276 (July 2011): 59–65. http://dx.doi.org/10.4028/www.scientific.net/amr.276.59.

Full text

Abstract:

Mobility degradation during gate length scaling is a well established experimental fact, which is confirmed also by Monte –Carlo simulation. We have analyzed the physical reason for this degradation using experimental and modeling data obtained in classic drift-diffusional approximation with electric field dependences of electron mobility. We have shown that this dependence is a main reason for mobility degradation in nanoscale FETs, which means also that the same reason will limit the drain current in future post-silicon CMOS generation with new materials like narrow band III/V compounds or g

APA, Harvard, Vancouver, ISO, and other styles

3

Hürner, Andreas, C. Bonse, G. Clemmer, et al. "Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC." Materials Science Forum 778-780 (February 2014): 487–90. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.487.

Full text

Abstract:

In this study, we present results on electrical characterization of bipolar pn-diodes to investigate the temperature and electrical field dependent behavior of ambipolar mobility in n-doped 4H-SiC. Therefore, static current-voltage measurements to calculate the specific differential resistance and dynamical reverse recovery measurements to determine the mean carrier concentration were carried out for different temperatures and forward current densities. The specific differential resistance of the drift layer decreased from 10 mΩcm2 at 80 Acm-2 to 6.6 mΩcm2 at 180 Acm-2, whereas the mean carrie

APA, Harvard, Vancouver, ISO, and other styles

4

Raibaruah, Apurba Kumar, and Kaushik Chandra Deva Sarma. "Carrier Mobility Analysis of Parallel Gated Junctionless Field Effect Transistor." Journal of Nanoelectronics and Optoelectronics 17, no. 1 (2022): 1–12. http://dx.doi.org/10.1166/jno.2022.3163.

Full text

Abstract:

The paper reports analysis of carrier mobility in a Parallel Gated Junctionless Field Effect Transistor. Fully analytical mathematical models for electron and hole mobilities are developed. The mobility models are developed using empirical relation between mobility and transverse and longitudinal electric field. The Quantum confinement effect has also been considered in the models. In the model electric field dependence on classical and quantum mechanical effects are formulated separately. The total electric field is the summation of the two. The models are compared with Technology Computer-Ai

APA, Harvard, Vancouver, ISO, and other styles

5

Shukri, Seyfan Kelil, and Lemi Demeyu Deja. "Charge Carriers Density, Temperature, and Electric Field Dependence of the Charge Carrier Mobility in Disordered Organic Semiconductors in Low Density Region." Condensed Matter 6, no. 4 (2021): 38. http://dx.doi.org/10.3390/condmat6040038.

Full text

Abstract:

We investigate the transport properties of charge carriers in disordered organic semiconductors using a model that relates a mobility with charge carriers (not with small polarons) hopping by thermal activation. Considering Miller and Abrahams expression for a hopping rate of a charge carrier between localized states of a Gaussian distributed energies, we employ Monte Carlo simulation methods, and calculate the average mobility of finite charge carriers focusing on a lower density region where the mobility was shown experimentally to be independent of the density. There are Monte Carlo simulat

APA, Harvard, Vancouver, ISO, and other styles

6

Milosevic, Milan, and Rifat Ramovic. "Analytical model of carrier mobility in a Polymer Field Effect Transistor." Chemical Industry 61, no. 2 (2007): 55–59. http://dx.doi.org/10.2298/hemind0702055m.

Full text

Abstract:

In this paper, the carrier mobility analytical model in a POFET (Polymer Field Effect Transistor) channel is proposed. The model was developed on the basis of existing models and experimental results. The proposed model is universal because it encompasses the carrier mobility dependence on temperature, electric field and trap density in the POFET channel. The model is comparatively simple, easy for application and gives valuable results. According to the presented model, simulations of mobility as a function of the parameters of interest were performed. The obtained results are shown graphical

APA, Harvard, Vancouver, ISO, and other styles

7

Reggiani, Susanna, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, and Giorgio Baccarani. "An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices." VLSI Design 10, no. 4 (2000): 467–83. http://dx.doi.org/10.1155/2000/52147.

Full text

Abstract:

A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to CAD and suitable for implementation in device simulators. The effects of the electric field, temperature, and doping concentration are accounted for. In particular, the model unifies the descriptions of majority- and minority-carrier mobility and includes the full temperature dependence. The effects of a high longitudinal field are included in the conventional velocity-saturation form; the doping dependence is also incorporated in the latter. The model has been worked out starting from a prelimin

APA, Harvard, Vancouver, ISO, and other styles

8

Šašić, Rajko M., and P. M. Lukić. "Conduction Mechanism Based Model of Organic Field Effect Transistor Structure." Materials Science Forum 555 (September 2007): 125–30. http://dx.doi.org/10.4028/www.scientific.net/msf.555.125.

Full text

Abstract:

Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density μ(T,E,NT) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.

APA, Harvard, Vancouver, ISO, and other styles

9

Nowak, Marian, Marcin Jesionek, Barbara Solecka, Piotr Szperlich, Piotr Duka, and Anna Starczewska. "Contactless photomagnetoelectric investigations of 2D semiconductors." Beilstein Journal of Nanotechnology 9 (October 25, 2018): 2741–49. http://dx.doi.org/10.3762/bjnano.9.256.

Full text

Abstract:

Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependence

APA, Harvard, Vancouver, ISO, and other styles

10

Abdinov, A. Sh, R. F. Babaeva, and R. M. Rzayev. "Dependence of carrier mobility on an electric field in gallium selenide crystals." Semiconductors 46, no. 6 (2012): 730–35. http://dx.doi.org/10.1134/s1063782612060024.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Liang, Y. L., L. G. Wang, C. G. Wang, G. C. Wang, and L. Zhang. "Carrier Density Dependence of the Mobility in Disordered Organic Semiconductors with Gaussian Disorder." Journal of Nanoelectronics and Optoelectronics 17, no. 7 (2022): 1098–103. http://dx.doi.org/10.1166/jno.2022.3284.

Full text

Abstract:

In this paper, the charge transport properties and energetic disorder are studied for pristine Si-PCPDTBT, mono-PCBM, bis-PCBM, and their blends of Si-PCPDTBT:mono-PCBM, Si-PCPDTBT:bis-PCBM. We show that the current density versus voltage curves of electron-only devices for mono-PCBM, bis-PCBM, Si-PCPDTBT:mono-PCBM, Si-PCPDTBT:bis-PCBM, and hole-only devices for Si-PCPDTBT, Si-PCPDTBT:mono-PCBM, Si-PCPDTBT:bis-PCBM cannot be accurately described using a conventional mobility model within which the mobility depends only on the electric field, but that a fully consistent description of all curve

APA, Harvard, Vancouver, ISO, and other styles

12

Saurova, Tatiana, and Vladyslav Shpichenko. "DRIFT MOBILITY OF ELECTRONS IN INDIUM ANTIMONIDE IN THE WEAK ELECTRIC FIELD REGIME." Bulletin of Kyiv Polytechnic Institute. Series Instrument Making, no. 68(2) (December 26, 2024): 24–29. https://doi.org/10.20535/1970.68(2).2024.318188.

Full text

Abstract:

In scientific publications, theoretical and experimental studies of the Hall mobility of indium antimonide are presented; its dependence on temperature, charge carrier concentration, and electric field strength. Note that a typical form of the weak-field temperature dependence of the electron drift mobility, showing its behavior in a wide range of temperature and impurity atom concentration, is not presented. The processes of charge carrier scattering in indium antimonide are poorly represented. The aim of this work is a detailed study of the main mechanisms of electron scattering in indium an

APA, Harvard, Vancouver, ISO, and other styles

13

Matsubara, Kohei, Kentaro Abe, Takaaki Manaka, and Mitsumasa Iwamoto. "Carrier Transport Mechanism in Single Crystalline Organic Semiconductor Thin Film Elucidated by Visualized Carrier Motion." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3388–93. http://dx.doi.org/10.1166/jnn.2016.12321.

Full text

Abstract:

Time-resolved microscopic second harmonic generation (TRM-SHG) measurement was conducted to evaluate temperature dependence of the anisotropic carrier transport process in 6,13-Bis(triisopropylsilylethynyl) (TIPS) pentacene single crystalline domains for two orthogonal directions. Enhancement of the electric field induced SHG (EFI-SHG) signal at the electrode edge at low temperature suggests the presence of potential drop in the injection process. We directly evaluated temperature dependence of the carrier mobility by taking into account the potential drop, and concluded that the Marcus theory

APA, Harvard, Vancouver, ISO, and other styles

14

Kim, Soohyun, Jungchun Kim, Doyoung Jang, et al. "Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET." Applied Sciences 10, no. 8 (2020): 2979. http://dx.doi.org/10.3390/app10082979.

Full text

Abstract:

The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25–125 °C). A similar temperature dependence of threshold voltage (VTH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (μeff) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak Ninv (= 5 × 1012 cm2/V∙s), both GAA NW-FET and FinF

APA, Harvard, Vancouver, ISO, and other styles

15

Mozer, Attila J., and Niyazi Serdar Sariciftci. "Negative electric field dependence of charge carrier drift mobility in conjugated, semiconducting polymers." Chemical Physics Letters 389, no. 4-6 (2004): 438–42. http://dx.doi.org/10.1016/j.cplett.2004.04.001.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

ZHU, M. "TEMPERATURE DEPENDENCE OF CARRIER MOBILITY IN EPITAXIAL THIN FILM La0.8Ca0.2MnO3/PbZr0.2Ti0.8O3 HETEROSTRUCTURE." Modern Physics Letters B 18, no. 21n22 (2004): 1119–25. http://dx.doi.org/10.1142/s0217984904007608.

Full text

Abstract:

Temperature dependences of the carrier mobility and charge density are studied for the MOS-FET epitaxial thin film La 0.8 Ca 0.2 MnO 3/ PbZr 0.2 Ti 0.8 O 3 heterostructure both above and below the metal insulator transition temperature. The behaviors of the mobility at low and high electric fields are found to be quite different from each other. Our results demonstrate that the change of channel thickness at high electric fields has a significant influence on the carrier mobility.

APA, Harvard, Vancouver, ISO, and other styles

17

NEBEL, C. E., and R. A. STREET. "HIGH FIELD TRANSPORT IN a-Si:H." International Journal of Modern Physics B 07, no. 05 (1993): 1207–58. http://dx.doi.org/10.1142/s0217979293002304.

Full text

Abstract:

Electric field dependent DC-dark and transient photoconductivity data measured over a broad temperature (10 K ≤T≤300 K ) and field regime (102 V/cm ≤F≤6×105 V/cm ) in phosphorus and boron doped and intrinsic amorphous hydrogenated silicon (a-Si:H) are described. The data demonstrate the strong influence of the electric field on carrier propagation. Enhancements over 6 orders of magnitude in conductivity (σ) are achieved for fields greater than 105 V/cm , which changes a-Si:H films from highly insulating to very conductive at low temperatures. The field dependence is described empirically by a

APA, Harvard, Vancouver, ISO, and other styles

18

Lukić, P. M., R. M. Ramović, and Rajko M. Šašić. "Modeling and Investigation of SiGe Based MOSFET Structure Transport Characteristics." Materials Science Forum 555 (September 2007): 101–6. http://dx.doi.org/10.4028/www.scientific.net/msf.555.101.

Full text

Abstract:

The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final

APA, Harvard, Vancouver, ISO, and other styles

19

Jakobsson, Mattias, and Sven Stafström. "Polaron effects and electric field dependence of the charge carrier mobility in conjugated polymers." Journal of Chemical Physics 135, no. 13 (2011): 134902. http://dx.doi.org/10.1063/1.3644931.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Xue-Yan, Tian, Xu Zheng, Zhao Su-Ling, et al. "Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors." Chinese Physics B 19, no. 1 (2010): 018103–7. http://dx.doi.org/10.1088/1674-1056/19/1/018103.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Nisikawa, Tomoyuki, Naoki Moriguchi, Takashi Anezaki, Akira Unno, Masaru Tachibana, and Kenichi Kojima. "Contact Pressure Dependence of Carrier Mobility in Cleaved Tetracene Single-Crystal Field-Effect Transistors." Japanese Journal of Applied Physics 45, no. 6A (2006): 5238–40. http://dx.doi.org/10.1143/jjap.45.5238.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Butko A. V., Butko V. Y., and Kumzerov Y. A. "Dependence of charge carrier mobility in hybrid nanostructures at the interface of graphene and molecular ions on their charge density." Physics of the Solid State 63, no. 13 (2022): 1820. http://dx.doi.org/10.21883/pss.2022.13.52327.141.

Full text

Abstract:

Hybrid nanostructures with large interface between nanostructural elements play an important role in the modern electronics. Among these nanostructures are hybrid nanostructures formed at the interface of graphene with ensembles of molecular ions in the solution gated Graphene Field Effect Transistors (GFETs) that are promising for chemical and biological sensor fabrication. Therefore investigation of interfacial effects in electrical transport in these systems is interesting. This work is a theoretical study of dependence of the charge carrier mobility (μ) in these nanostructures on density o

APA, Harvard, Vancouver, ISO, and other styles

23

Chen, Zheng, Yuan Liu, Hui Zhang, et al. "Electric field control of superconductivity at the LaAlO3/KTaO3(111) interface." Science 372, no. 6543 (2021): 721–24. http://dx.doi.org/10.1126/science.abb3848.

Full text

Abstract:

The oxide interface between LaAlO3 and KTaO3(111) can harbor a superconducting state. We report that by applying a gate voltage (VG) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped Tc-VG dependence, where Tc is the transition temperature. The electric gating has only a minor effect on carrier density but a strong one on mobility. We interpret the tuning of mobility in terms of change in the spatial profile of the carriers in the interface and hence, effective disorder. As the temperature is decreased, the resistance satu

APA, Harvard, Vancouver, ISO, and other styles

24

Juška, Gytis, Kęstutis Arlauskas, and Kristijonas Genevičius. "Charge carrier transport and recombination in disordered materials." Lithuanian Journal of Physics 56, no. 3 (2016): 182–89. http://dx.doi.org/10.3952/physics.v56i3.3367.

Full text

Abstract:

In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is

APA, Harvard, Vancouver, ISO, and other styles

25

AMIN, N. AZIZIAH, ZAHARAH JOHARI, MOHAMMAD TAGHI AHMADI, and RAZALI ISMAIL. "LOW-FIELD MOBILITY MODEL ON PARABOLIC BAND ENERGY OF GRAPHENE NANORIBBON." Modern Physics Letters B 25, no. 04 (2011): 281–90. http://dx.doi.org/10.1142/s0217984911025584.

Full text

Abstract:

The carrier mobility in low-field specifically in parabolic energy region of one-dimensional graphene nanoribbon (GNR) band energy is presented in this work. Low-field mobility model describe the carrier transport and its dependency factors when dealing with degenerate and non-degenerate principals. The result shows that the low-field mobility strongly depends on the temperature in the non-degenerate regime in which it sharply decreases with increasing temperature in the range of 10–250 K but the mobility is less affected by the temperature above 250 K. The effect of varying the GNR width to t

APA, Harvard, Vancouver, ISO, and other styles

26

Jiang, Hui, Ke Jie Tan, Keke K. Zhang, Xiaodong Chen, and Christian Kloc. "Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility." Journal of Materials Chemistry 21, no. 13 (2011): 4771. http://dx.doi.org/10.1039/c0jm04383d.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Wu, A. T., S. W. Lee, T. Y. Chan, and V. Murali. "Temperature and field dependence of carrier mobility in MOSFETs with reoxidized nitrided oxide gate dielectrics." Solid-State Electronics 35, no. 1 (1992): 27–32. http://dx.doi.org/10.1016/0038-1101(92)90299-r.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Ye, Hansheng, Mikhail Gaevski, Grigory Simin, Asif Khan, and Patrick Fay. "Electron mobility and velocity in Al_0.45Ga_0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications." Applied Physics Letters 120, no. 10 (2022): 103505. http://dx.doi.org/10.1063/5.0084022.

Full text

Abstract:

Ultra-wide bandgap AlGaN has attracted recent attention as a promising channel material for next-generation high electron mobility transistors (HEMTs) for RF power due to its high critical field, excellent transport properties, and potential for operation in extreme environments. However, the effects of temperature on the transport properties are not fully understood. Here, Al0.62Ga0.38N/Al0.45Ga0.55N HEMTs have been fabricated and characterized up to 150 °C at DC and RF to evaluate the effect of temperature on electron mobility and carrier velocity. Measured results indicate that both mobilit

APA, Harvard, Vancouver, ISO, and other styles

29

Okada, Jun, Takashi Nagase, Takashi Kobayashi, and Hiroyoshi Naito. "Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3219–22. http://dx.doi.org/10.1166/jnn.2016.12297.

Full text

Abstract:

Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylben-zothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenerg

APA, Harvard, Vancouver, ISO, and other styles

30

Khanh, Nguyen Quoc, and Mai Thanh Huyen. "Transport Properties of A Quasi-two-dimensional Electron Gas in InP/In\(_{1 - x}\)Ga\(_{x}\)As/InP Quantum Wells : Correlation and Magnetic Field Effects." Communications in Physics 25, no. 2 (2015): 125. http://dx.doi.org/10.15625/0868-3166/25/2/4668.

Full text

Abstract:

We investigate correlation and magnetic field effects on the mobility and resistivity of a quasi-two-dimensional electron gas in an InP/In\(_{1 - x}\)Ga\(_{x}\)As/InP quantum well at arbitrary temperatures. We study the dependence of the mobility and resistivity on the carrier density, magnetic field, layer thickness and temperature for alloy disorder and impurity scattering using different approximations for the local-field correction. Multiple scattering effects and discuss the possibility of a metal-insulator transition, which might happen at low density for unpolarized and fully polarized

APA, Harvard, Vancouver, ISO, and other styles

31

LEI, X. L., N. J. M. HORING, H. L. CUI, and K. K. THORNBER. "ANOMALOUS FREQUENCY DEPENDENCE OF DIFFERENTIAL MOBILITY IN SUPERLATTICE MINIBAND TRANSPORT." Modern Physics Letters B 10, no. 01n02 (1996): 51–60. http://dx.doi.org/10.1142/s0217984996000092.

Full text

Abstract:

We examine the frequency-dependence of carrier drift-velocity in superlattice miniband conduction for a small signal ac electric field superposed on a dc bias E0. Our determination of the differential mobility is based on an accurate microscopic treatment of phonon and impurity scatterings. At finite E0, the differential mobility exhibits anomalous frequency-dependence: its real part exhibits a broad hump before finally approaching zero at high frequency, and its imaginary part has a marked dip to negative values before going through the conventional maximum. A simple dual-parameter empirical

APA, Harvard, Vancouver, ISO, and other styles

32

Jun, Li, Sun Jiu-Xun, and Chang Zhao. "Improved expression of charge-carrier mobility in disordered semiconducting polymers considering dependence on temperature, electric field and charge-carrier density." Synthetic Metals 159, no. 19-20 (2009): 1915–21. http://dx.doi.org/10.1016/j.synthmet.2009.07.007.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Chowdhury, Md. Iqbal Bahar. "Base Transit Time Modeling of Gaussian-Doped SiGe HBT Considering Field-Dependence of Mobility." INTERNATIONAL JOURNAL OF RESEARCH IN ELECTRONICS AND COMPUTER ENGINEERING 4, no. 1 (2016): 53–59. https://doi.org/10.5281/zenodo.15315518.

Full text

Abstract:

This work assesses the effects of fielddependence of the carrier mobility on the base transit time of an npn SiGe hetero-junction bipolar transistor (HBT) with its base heavily doped with Gaussian type doping profile. Three types of Ge dosing, namely, box, trapezoidal and triangular profiles of SiGe HBT is represented by a generalized trapezoidal Ge-dosing profile. An analytical model has been developed considering this field-dependence. The model also includes the various effects caused by the non-uniformity of the base doping profile and also, of the Ge-content in the base. The model applica

APA, Harvard, Vancouver, ISO, and other styles

34

Petrovic, Jovana, Petar Matavulj, Qi Difei, and Sandra Selmic. "Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector." Chemical Industry 63, no. 3 (2009): 177–81. http://dx.doi.org/10.2298/hemind0903177p.

Full text

Abstract:

In this paper we investigate charge carrier recombination processes in polymer based photodetector ITO/PEDOT:PSS/MEH-PPV/Al. The major carriers are the hole polarons created by the photoexcitation in the active MEH-PPV film. The model used in this paper is based on the continuity equation and drift-diffusion equation for hole polarons. We assume the Poole-Frenkel expression for field dependence of the hole polaron mobility. The internal quantum efficiency dependence on incident photon flux density, incident light wavelength and applied electric field is included in the model. The simulated pho

APA, Harvard, Vancouver, ISO, and other styles

35

Kovalenko, Konstantin L., Sergei I. Kozlovskiy, Nicolai N. Sharan, and Eugeniy F. Venger. "Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)." Journal of Physics: Condensed Matter 36, no. 32 (2024): 325705. http://dx.doi.org/10.1088/1361-648x/ad44fb.

Full text

Abstract:

Abstract Analytical expressions for the low-field mobility of charge carrier gases with three-(3D), two-(2D) and one-(1D) dimensionalities are obtained. Multi-ion ionized impurities scattering, acoustic and polar optic phonons are considered as scattering mechanisms. The calculated values of mobility are compared to known experimental data for bulk (3D) n-and p-type wurtzite, n-type zinc-blende GaN crystals and low dimensional (2D and 1D) ternary GaAlN compounds. The resulting analytical expressions give the dependences of mobility on dimensionality of charge carrier gas, its density, effectiv

APA, Harvard, Vancouver, ISO, and other styles

36

Babel, Amit, and Samson A. Jenekhe. "Alkyl chain length dependence of the field-effect carrier mobility in regioregular poly(3-alkylthiophene)s." Synthetic Metals 148, no. 2 (2005): 169–73. http://dx.doi.org/10.1016/j.synthmet.2004.09.033.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Harrysson Rodrigues, Isabel, Andrey Generalov, Miika Soikkeli, Anton Murros, Sanna Arpiainen, and Andrei Vorobiev. "Geometrical magnetoresistance effect and mobility in graphene field-effect transistors." Applied Physics Letters 121, no. 1 (2022): 013502. http://dx.doi.org/10.1063/5.0088564.

Full text

Abstract:

Further development of graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in the GFETs can be directly characterized and studied using the geometrical magnetoresistance (gMR) effect. The method is free from limitations of other approaches since it does not require an assumption of the constant mobility and the knowledge of the gate capacitance. Studies of a few sets of GFETs in the wide range of transverse magnetic fields indicate that the

APA, Harvard, Vancouver, ISO, and other styles

38

Roldán, J. B., F. Gámiz, and J. A. López-Villanueva. "Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs." VLSI Design 8, no. 1-4 (1998): 261–64. http://dx.doi.org/10.1155/1998/52301.

Full text

Abstract:

A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method.

APA, Harvard, Vancouver, ISO, and other styles

39

S., M.Moududul Islam, Arafat Yeasir, Ziaur Rahman Khan Md., and Bahar Chowdhury Md.Iqbal. "Base Transit Time Modeling of Gaussian-Doped SiGe HBT Considering Field-Dependence of Mobility." International Journal of Research in Electronics and Computer Engineering (IJRECE) 4, no. 1 (2016): 53–59. https://doi.org/10.5281/zenodo.14702660.

Full text

Abstract:

This work assesses the effects of fielddependence of the carrier mobility on the base transit time of an npn SiGe hetero-junction bipolar transistor (HBT) with its base heavily doped with Gaussian type doping profile. Three types of Ge dosing, namely, box, trapezoidal and triangular profiles of SiGe HBT is represented by a generalized trapezoidal Ge-dosing profile. An analytical model has been developed considering this field-dependence. The model also includes the various effects caused by the non-uniformity of the base doping profile and also, of the Ge-content in the base. The model applica

APA, Harvard, Vancouver, ISO, and other styles

40

Lin, Ming-Gu, Chao-Ping Huang, C. T. Liang, C. G. Smith, M. Y. Simmons, and D. A. Ritchie. "Mobility dependence on carrier density in a dilute GaAs electron gas in an in-plane magnetic field." Physica E: Low-dimensional Systems and Nanostructures 22, no. 1-3 (2004): 324–27. http://dx.doi.org/10.1016/j.physe.2003.12.012.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Бутко, А. В., В. Ю. Бутко та Ю. А. Кумзеров. "Зависимость подвижности носителей заряда в гибридных наноструктурах на интерфейсе графена с молекулярными ионами от их зарядовой плотности". Физика твердого тела 63, № 11 (2021): 1960. http://dx.doi.org/10.21883/ftt.2021.11.51603.141.

Full text

Abstract:

A.V. Butko, V.Y. Butko, Y.A.Kumzerov Ioffe Institute, 194021, St. Petersburg, Russia Hybrid nanostructures with large interface between nanostructural elements play an important role in the modern electronics. Among these nanostructures are hybrid nanostructures formed at the interface of graphene with ensembles of molecular ions in the solution gated Graphene Field Effect Transistors (GFETs) that are promising for chemical and biological sensor fabrication. Therefore investigation of interfacial effects in electrical transport in these systems is interesting. This work is a theoretical study

APA, Harvard, Vancouver, ISO, and other styles

42

Sakaki, H., J. I. Motohisa, and K. Hirakawa. "Roles of low field mobility and its carrier-concentration dependences in high electron mobility transistors and other field effect transistors." IEEE Electron Device Letters 9, no. 3 (1988): 133–35. http://dx.doi.org/10.1109/55.2066.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Truong, Van Tuan, Quoc Khanh Nguyen, Van Tai Vo, and Khan Linh Dang. "Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects." Communications in Physics 30, no. 2 (2020): 123. http://dx.doi.org/10.15625/0868-3166/30/2/14446.

Full text

Abstract:

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effe

APA, Harvard, Vancouver, ISO, and other styles

44

Bhargava, Kshitij, Anubha Bilgaiyan, S. Raj Mohan, et al. "Investigating the Influence of Alkyl Chain Length in Poly(3-alkylthiophene)s Over the Thin Film Morphology by Optical and Electrical Characterization." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3241–47. http://dx.doi.org/10.1166/jnn.2016.12322.

Full text

Abstract:

This paper studies the influence of alkyl-chain length in poly(3-alkylthiophene)s over the morphology of thin films and electrical parameters of the devices based on it. Regioregular poly(3-hexylthiophene) and poly(3-octylthiophene) were chosen as the semiconducting materials for the study. The morphological variations were studied by absorption spectroscopy, photoluminescence spectroscopy and X-ray diffraction study. The absorption and photoluminescence showed decreased coplanarity of main chain in poly(3-octylthiophene) over poly(3-hexylthiophene) and which was later confirmed using X-ray di

APA, Harvard, Vancouver, ISO, and other styles

45

Izhnin, I. I., K. D. Mynbaev, A. V. Voitsekhovskii, and A. G. Korotaev. "Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe." Journal of Applied Physics 132, no. 15 (2022): 155702. http://dx.doi.org/10.1063/5.0097418.

Full text

Abstract:

A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its application to transport studies in HgCdTe is given. First, a brief review of the methods of the analysis of field dependences of the Hall coefficient and conductivity in HgCdTe-based structures with a multi-carrier mobility spectrum is presented. The advantages and drawbacks of these methods, which include original mobility-spectrum analysis by Beck and Anderson, multi-carrier fitting and iterative approach by Dziuba and Górska, and the later developments of these techniques, are considered. The properti

APA, Harvard, Vancouver, ISO, and other styles

46

Mendil, Nesrine, Mebarka Daoudi, Zakarya Berkai, and Abderrahmane Belghachi. "Charge Carrier Mobility Behavior in the SubPc/C60 Planar Heterojunction." Zeitschrift für Naturforschung A 73, no. 11 (2018): 1047–52. http://dx.doi.org/10.1515/zna-2018-0142.

Full text

Abstract:

AbstractStructural arrangement and construction are the keys to electron/hole motion through organic semiconductor lattices. In this work, we focused on the disorder energy, temperature, and electric field effects on charge carrier mobilities using a Poole–Frenkel mobility model for SubPc/C60 devices. The results agree with those found in the literature. We observed important temperature, applied voltage, and disorder energy dependencies of the current-voltage characteristics and charge carrier mobilities; these characteristics have the Gunn curve form called negative conductivity, which has b

APA, Harvard, Vancouver, ISO, and other styles

47

Muravyov, V. V., and V. N. Mishchenka. "Simulation of electron transfer processes in a semiconductor structure using graphene and boron nitride." Doklady BGUIR 18, no. 7 (2020): 71–78. http://dx.doi.org/10.35596/1729-7648-2020-18-7-71-78.

Full text

Abstract:

This paper presents the results of simulating the electron transfer processes in a three-dimensional semiconductor structure containing graphene and layers of boron hexagonal nitride using the Monte – Carlo method. Graphene is currently considered one of the most promising materials for the creation of new semiconductor devices with good performance for high frequency ranges. The use of graphene, which has high mobility of charge carriers, high thermal conductivity and a number of other positive properties, allows the development of new semiconductor devices with good output characteristics. T

APA, Harvard, Vancouver, ISO, and other styles

48

Giannazzo, Filippo, Corrado Bongiorno, Salvatore di Franco, Emanuele Rimini, and Vito Raineri. "Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)." Materials Science Forum 717-720 (May 2012): 637–40. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.637.

Full text

Abstract:

The electrical properties of epitaxial graphene (EG) grown on 8° off-axis 4H-SiC (0001) by annealing at 1600 °C in inert gas ambient (Ar) were studied. The sheet resistance of the EG layers (Rsh=740±50Ω/sq) and the specific contact resistance of Ni contacts to EG (ρc≈6x10-5Ωcm2) were evaluated on micrometer scale by measurements on transmission line model (TLM) structures. Si3N4was evaluated as a gate dielectric, showing excellent coverage to EG and a limited effect on its conductivity. The high n-type doping (~1013cm-2) of EG, as well as the field effect mobility (μ) dependence on n were dete

APA, Harvard, Vancouver, ISO, and other styles

49

Mano, Kitipong, Narin Tammarugwattana, Navaphun Kayunkid, Chaloempol Saributr, Pitiporn Thanomngam, and Jiti Nukeaw. "Study of Optical and Electrical Properties of Bismuth-Doped Copper Phthalocyanine Thin Films Grown by Thermal Co-Evaporation." Advanced Materials Research 1131 (December 2015): 49–52. http://dx.doi.org/10.4028/www.scientific.net/amr.1131.49.

Full text

Abstract:

Bismuth-doped copper phthalocyanine (Bi-doped CuPc) thin films were grown by organic-source thermal co-evaporation under five different deposition rates. Morphological, optical and chemical properties of the doped-films were characterized by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of ITO/Bi-doped-CuPc/Al devices i.e. carrier mobility and carrier concentration were characterized by current-voltage and capacitance-voltage measurements. Morphology of t

APA, Harvard, Vancouver, ISO, and other styles

50

Liu, Xinyu, Logan Riney, Josue Guerra, et al. "Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors." Journal of Semiconductors 43, no. 11 (2022): 112502. http://dx.doi.org/10.1088/1674-4926/43/11/112502.

Full text

Abstract:

Abstract Ferromagnetic semiconductor Ga1–x Mn x As1–y P y thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers. In this regime, we report a colossal negative magnetoresistance (CNMR) coexisting with a saturated magnetic moment, unlike in the traditional magnetic semiconductor Ga1– x Mn x As. By analyzing the temperature dependence of the resistivity at fixed magnetic field, we demonstrate that the CNMR can be consistently described by the field dependence of the localization length, which relates to a fie

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!