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Journal articles on the topic 'Field-effect transistor performance'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 February 2022

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1

Hamieh, S. "Improving the RF Performance of Carbon Nanotube Field Effect Transistor." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/724121.

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Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tub

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2

Kumar, Prateek, Maneesha Gupta, Naveen Kumar, et al. "Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function." Sensor Letters 18, no. 6 (2020): 468–76. http://dx.doi.org/10.1166/sl.2020.4236.

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With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation tools available do not include short channel effects and quantum effects in the analysis which raises doubt on their authenticity. Although researchers have tried to provide an alternative in the form of tunnel field-effect transistors, junction-less transistors, etc. but they all suffer from their own set of problems. Therefore, Metal-Oxide-Semiconductor Field-Effect Transistor remains the backbone of the VLSI indus

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3

Chaw, Chaw Su Nandar Hlaing, and Thiri Nwe. "Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor." Journal La Multiapp 1, no. 2 (2020): 14–21. http://dx.doi.org/10.37899/journallamultiapp.v1i2.108.

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This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of

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4

Muzumdar, P., K. Mirchandani, F. Trusell, V. Droznin, and S. Mil'shtein. "Improved performance of a field effect transistor." Superlattices and Microstructures 8, no. 4 (1990): 357–59. http://dx.doi.org/10.1016/0749-6036(90)90330-a.

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5

Jadwiszczak, Jakub, Pierce Maguire, Conor P. Cullen, Georg S. Duesberg, and Hongzhou Zhang. "Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors." Beilstein Journal of Nanotechnology 11 (September 4, 2020): 1329–35. http://dx.doi.org/10.3762/bjnano.11.117.

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Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS2) field-effect transistors irradiated with a focused helium ion beam as a function of increasing areal irradiation coverage. We determine an optimal coverage range of approx. 10%, which allows for the improvement of both the carrier mobility in the transistor channel and the electrical conductance of the MoS2, due to doping

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6

Safari, Ali, Massoud Dousti, and Mohammad Bagher Tavakoli. "Monolayer Graphene Field Effect Transistor-Based Operational Amplifier." Journal of Circuits, Systems and Computers 28, no. 03 (2019): 1950052. http://dx.doi.org/10.1142/s021812661950052x.

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Graphene Field Effect Transistor (GFET) is a promising candidate for future high performance applications in the beyond CMOS roadmap for analog circuit applications. This paper presents a Verilog-A implementation of a monolayer graphene field-effect transistor (mGFET) model. The study of characteristic curves is carried out using advanced design system (ADS) tools. Validation of the model through comparison with measurements from the characteristic curves is carried out using Silvaco TCAD tools. Finally, the mGFET is used to design a GFET-based operational amplifier (Op-Amp). The GFET Op-Amp p

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7

. Yegon, G. K. "Silicon Heterostructures as High Performance Field Effect Transistor." IOSR Journal of Applied Physics 09, no. 04 (2017): 54–59. http://dx.doi.org/10.9790/4861-0904015459.

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8

KHAN, ANWAR A., and LALAN SINGH. "Optimizing the performance of modified field effect transistor." International Journal of Electronics 62, no. 3 (1987): 435–40. http://dx.doi.org/10.1080/00207218708920994.

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9

Taniuchi, H., H. Umezawa, T. Arima, M. Tachiki, and H. Kawarada. "High-frequency performance of diamond field-effect transistor." IEEE Electron Device Letters 22, no. 8 (2001): 390–92. http://dx.doi.org/10.1109/55.936353.

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10

Tekleab, Daniel. "Device Performance of Silicon Nanotube Field Effect Transistor." IEEE Electron Device Letters 35, no. 5 (2014): 506–8. http://dx.doi.org/10.1109/led.2014.2310175.

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11

Adzhri, R., M. K. Md Arshad, Subash C. B. Gopinath, et al. "High-performance integrated field-effect transistor-based sensors." Analytica Chimica Acta 917 (April 2016): 1–18. http://dx.doi.org/10.1016/j.aca.2016.02.042.

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12

Tajarrod, Mohammad Hadi, and Hassan Rasooli Saghai. "High I on/I off current ratio graphene field effect transistor: the role of line defect." Beilstein Journal of Nanotechnology 6 (October 23, 2015): 2062–68. http://dx.doi.org/10.3762/bjnano.6.210.

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The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the

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13

Pelella, Aniello, Alessandro Grillo, Enver Faella, Filippo Giubileo, Francesca Urban, and Antonio Di Bartolomeo. "Molybdenum Disulfide Field Effect Transistors under Electron Beam Irradiation and External Electric Fields." Materials Proceedings 4, no. 1 (2020): 25. http://dx.doi.org/10.3390/iocn2020-07807.

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In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation con

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14

Xu, Yao, Ashok Srivastava, and Ashwani K. Sharma. "Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance." VLSI Design 2010 (February 17, 2010): 1–8. http://dx.doi.org/10.1155/2010/864165.

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Current transport and dynamic models of carbon nanotube field-effect transistors are presented. A model of single-walled carbon nanotube as interconnect is also presented and extended in modeling of single-walled carbon nanotube bundles. These models are applied in studying the performances of circuits such as the complementary carbon nanotube inverter pair and carbon nanotube as interconnect. Cadence/Spectre simulations show that carbon nanotube field-effect transistor circuits can operate at upper GHz frequencies. Carbon nanotube interconnects give smaller delay than copper interconnects use

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15

Goswami, Yogesh, Pranav Asthana, Shibir Basak, and Bahniman Ghosh. "Junctionless Tunnel Field Effect Transistor with Nonuniform Doping." International Journal of Nanoscience 14, no. 03 (2015): 1450025. http://dx.doi.org/10.1142/s0219581x14500252.

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In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel p

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16

Natarajamoorthy, Mathan, Jayashri Subbiah, Nurul Ezaila Alias, and Michael Loong Peng Tan. "Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design." Journal of Nanotechnology 2020 (April 30, 2020): 1–7. http://dx.doi.org/10.1155/2020/7608279.

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The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. Graphene nanoribbon field-effect transistor (GNRFET) is an emerging technology that can potentially solve the issues of the conventional planar MOSFET imposed by quantum mechanical (QM) effects. GNRFET can also be used as static random-access memory (SRAM) circuit design due to its remarkable electronic properties. For high-speed operation, SRAM c

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17

Zhang, Congcong, Penglei Chen, and Wenping Hu. "Organic field-effect transistor-based gas sensors." Chemical Society Reviews 44, no. 8 (2015): 2087–107. http://dx.doi.org/10.1039/c4cs00326h.

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18

Sri Selvarajan, Reena, Azrul Azlan Hamzah, Norliana Yusof, and Burhanuddin Yeop Majlis. "Channel length scaling and electrical characterization of graphene field effect transistor (GFET)." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (2019): 697. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp697-703.

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<p>The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation techni

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19

G. H., Nayana, and Vimala P. "Monolayer and bilayer graphene field effect transistor using Verilog-A." International Journal of Reconfigurable and Embedded Systems (IJRES) 10, no. 1 (2021): 56. http://dx.doi.org/10.11591/ijres.v10.i1.pp56-64.

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Monolayer and bilayer graphene field effect transistor modeling is presented in this paper. The transport model incorporated, works well for both drift diffusive and ballistic conditions. The validity of the model was checked for various device dimensions and bias voltages. Performance parameters affecting operation of graphene field effect transistor in various region of operation are optimized. Model was developed to verify transfer characteristics for monolayer and bilayer graphene field effect transistor. Results obtained prove the ambipolar property in Graphene. MATLAB is used for numeric

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20

Walke, Pravin S., Vandana B. Patil, I. S. Mulla, and Dattatray J. Late. "High performance single crystalline PbWO4 nanorod field effect transistor." Journal of Materials Science: Materials in Electronics 26, no. 12 (2015): 10044–48. http://dx.doi.org/10.1007/s10854-015-3685-9.

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21

Pfattner, Raphael, Concepció Rovira, and Marta Mas-Torrent. "Organic metal engineering for enhanced field-effect transistor performance." Physical Chemistry Chemical Physics 17, no. 40 (2015): 26545–52. http://dx.doi.org/10.1039/c4cp03492a.

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22

Singh, Deepika, and Ganesh C. Patil. "Performance Analysis of Feedback Field-Effect Transistor-Based Biosensor." IEEE Sensors Journal 20, no. 22 (2020): 13269–76. http://dx.doi.org/10.1109/jsen.2020.3006986.

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23

Johari, Zaharah, F. K. A. Hamid, Michael Loong Peng Tan, M. Taghi Ahmadi, F. K. Che Harun, and Razali Ismail. "Graphene Nanoribbon Field Effect Transistor Logic Gates Performance Projection." Journal of Computational and Theoretical Nanoscience 10, no. 5 (2013): 1164–70. http://dx.doi.org/10.1166/jctn.2013.2823.

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24

Nasri, Faouzi, Mohamed Fadhel Ben Aissa, and Hafedh Belmabrouk. "Nanoheat Conduction Performance of Black Phosphorus Field-Effect Transistor." IEEE Transactions on Electron Devices 64, no. 6 (2017): 2765–69. http://dx.doi.org/10.1109/ted.2017.2694484.

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25

Li, Chi-Kang, Po-Chun Yeh, Jeng-Wei Yu, Lung-Han Peng, and Yuh-Renn Wu. "Scaling performance of Ga2O3/GaN nanowire field effect transistor." Journal of Applied Physics 114, no. 16 (2013): 163706. http://dx.doi.org/10.1063/1.4827190.

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26

Zou, J., H. Dong, A. Gopinath, and M. Shur. "Performance and optimization of dipole heterostructure field-effect transistor." IEEE Transactions on Electron Devices 39, no. 2 (1992): 250–56. http://dx.doi.org/10.1109/16.121680.

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27

Mohammed, Bushra H., and Estabraq Talib Abdullah. "Performance Study of Pentacene based Organic Field Effect Transistor by Using monolayer, bilayer and trilayer and Gate Insulators." Iraqi Journal of Physics (IJP) 18, no. 44 (2020): 85–97. http://dx.doi.org/10.30723/ijp.v18i44.512.

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In this paper, Pentacene based-organic field effect transistors (OFETs) by using monolayer , bilayer and three layers of three different gate insulators (ZrO2, PVA and CYEPL) , two layers of different gate insulators (ZrO2/PVA and ZrO2/CYEPL ) and three layers of different gate insulators (ZrO2/PVA/CYEPL) were studied its electrical performance (output (Id-Vd)and transfer(Id-Vg) characteristics)by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investig

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28

Takaya, Tomotsugu, Melaku Dereje Mamo, Makoto Karakawa, and Yong-Young Noh. "Donor unit effect on DPP based organic field-effect transistor performance." Dyes and Pigments 158 (November 2018): 306–11. http://dx.doi.org/10.1016/j.dyepig.2018.05.062.

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29

Parikh, Pritesh, Corey Senowitz, Don Lyons, et al. "Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)." Microscopy and Microanalysis 23, no. 5 (2017): 916–25. http://dx.doi.org/10.1017/s1431927617012491.

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AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluc

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30

Chen, Ming-Chou, Sureshraju Vegiraju, Chi-Ming Huang, et al. "Asymmetric fused thiophenes for field-effect transistors: crystal structure–film microstructure–transistor performance correlations." J. Mater. Chem. C 2, no. 42 (2014): 8892–902. http://dx.doi.org/10.1039/c4tc01454e.

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31

FOBELETS, K., P. W. DING, Y. SHADROKH, and J. E. VELAZQUEZ-PEREZ. "ANALOG AND DIGITAL PERFORMANCE OF THE SCREEN-GRID FIELD EFFECT TRANSISTOR (SGRFET)." International Journal of High Speed Electronics and Systems 18, no. 04 (2008): 783–92. http://dx.doi.org/10.1142/s012915640800576x.

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The Screen-Grid Field Effect Transistor (SGrFET) is a planar MOSFET-type device with a gating configuration consisting of metal cylindrical fingers inside the channel perpendicular to the current flow. The SGrFET operates in a MESFET mode using oxide insulated gates. The multi-gate configuration offers advantages for both analog and digital applications, whilst the gate cylinder holes can be exploited for bio-applications. In this manuscript TCAD results are presented on the analog and digital performance of the Screen-Grid Field Effect Transistor. The results are compared to the operation of

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32

Hatefinasab, Seyedehsomayeh. "Carbon Nanotube Field Effect Transistor-Based Hybrid Full Adders Using Gate-Diffusion Input Structure." Journal of Nanoelectronics and Optoelectronics 14, no. 11 (2019): 1512–22. http://dx.doi.org/10.1166/jno.2019.2661.

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Scaling down the size of transistor in the nanoscale reduces the power supply voltage, as a result, the design of high-performance nano-circuit at low voltage has been considered. Most of digital circuits are composed of different components which determine the performance of the entire digital circuits. With the improvement of these components, the digital circuits can be optimized. One of these components is full adder for which various structures have been proposed to improve its performance, among them the two novel full adder structures are based on Gate-Diffusion Input (GDI) structure an

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33

Choi, Dalsu, Ping-Hsun Chu, Michael McBride, and Elsa Reichmanis. "Best Practices for Reporting Organic Field Effect Transistor Device Performance." Chemistry of Materials 27, no. 12 (2015): 4167–68. http://dx.doi.org/10.1021/acs.chemmater.5b01982.

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34

Ram, Mamidala Saketh, and Dawit Burusie Abdi. "Performance Investigation of Single Grain Boundary Junctionless Field Effect Transistor." IEEE Journal of the Electron Devices Society 4, no. 6 (2016): 480–84. http://dx.doi.org/10.1109/jeds.2016.2600375.

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35

Duan, Xiaoling, Jincheng Zhang, Jiabo Chen, et al. "High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor." Micromachines 10, no. 1 (2019): 75. http://dx.doi.org/10.3390/mi10010075.

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A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel interface in the drain regions, and increase the tunneling barrier for the flow of holes from the conduction band of the drain to the valence band of the channel region under negative gate bias for n-TFET, which induces the ambipolar current being reduced from 1.93 × 10−8 to 1.46 × 10−11 A/μm. In addition, polar InGaN heterostructure TFET having a po

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36

Okamoto, T., M. L. Senatore, M. M. Ling, A. B. Mallik, M. L. Tang, and Z. Bao. "Synthesis, Characterization, and Field-Effect Transistor Performance of Pentacene Derivatives." Advanced Materials 19, no. 20 (2007): 3381–84. http://dx.doi.org/10.1002/adma.200700298.

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37

Mand, R. S., S. Eicher, and A. J. Springthorpe. "High performance of induced-channel heterojunction field-effect transistor (HFET)." Electronics Letters 25, no. 6 (1989): 386. http://dx.doi.org/10.1049/el:19890266.

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38

Hall, Kimberley C., and Michael E. Flatté. "Performance of a spin-based insulated gate field effect transistor." Applied Physics Letters 88, no. 16 (2006): 162503. http://dx.doi.org/10.1063/1.2192152.

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39

Liu, Xue, Jin Hu, Chunlei Yue, et al. "High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide." ACS Nano 8, no. 10 (2014): 10396–402. http://dx.doi.org/10.1021/nn505253p.

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40

Dwyer, C., L. Vicci, and R. M. Taylor. "Performance simulation of nanoscale silicon rod field-effect transistor logic." IEEE Transactions On Nanotechnology 2, no. 2 (2003): 69–74. http://dx.doi.org/10.1109/tnano.2003.812592.

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41

Lin, Y. M., J. Appenzeller, J. Knoch, and P. Avouris. "High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities." IEEE Transactions On Nanotechnology 4, no. 5 (2005): 481–89. http://dx.doi.org/10.1109/tnano.2005.851427.

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42

Ahmad, Syed Afzal, and Naushad Alam. "Performance Improvement of Tunnel Field Effect Transistor Using Double Pocket." Journal of Nanoelectronics and Optoelectronics 14, no. 8 (2019): 1148–57. http://dx.doi.org/10.1166/jno.2019.2648.

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43

Akram, M. W., and Bahniman Ghosh. "Analog performance of double gate junctionless tunnel field effect transistor." Journal of Semiconductors 35, no. 7 (2014): 074001. http://dx.doi.org/10.1088/1674-4926/35/7/074001.

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44

Rosaz, G., B. Salem, N. Pauc, et al. "High-performance silicon nanowire field-effect transistor with silicided contacts." Semiconductor Science and Technology 26, no. 8 (2011): 085020. http://dx.doi.org/10.1088/0268-1242/26/8/085020.

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45

Anju, Bibhudendra Acharya, and Guru Prasad Mishra. "Linearity performance analysis of junctionless nanotube tunnel field effect transistor." Materials Today: Proceedings 43 (2021): 3911–15. http://dx.doi.org/10.1016/j.matpr.2020.12.1238.

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46

Wen, Shaofeng, Changyong Lan, Chun Li, et al. "Gate-bias instability of few-layer WSe2 field effect transistors." RSC Advances 11, no. 12 (2021): 6818–24. http://dx.doi.org/10.1039/d0ra09376a.

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47

Sawatzki, F. Michael, Alrun A. Hauke, Duy Hai Doan, et al. "On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors." MRS Advances 2, no. 23 (2017): 1249–57. http://dx.doi.org/10.1557/adv.2017.29.

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ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFE

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48

Wang, Yanjie, Bo-Chao Huang, Ming Zhang, Congqin Miao, Ya-Hong Xie, and Jason C. S. Woo. "Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance." ISRN Electronics 2012 (September 12, 2012): 1–7. http://dx.doi.org/10.5402/2012/891480.

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Graphene FETs with top-gate and buried-gate structure has been studied. The buried-gate structure shows less fringing capacitance and more reliable contacts. High-performance graphene transistors with self-aligned buried gates have been fabricated. The graphene transistor shows field-effect mobility of over 6,000 cm2/V · s according to the transconductance measurement. The contact resistance and intrinsic mobility have been extracted from both curve fitting and transfer length measurement, and the two results agree well. This result paves the way of high-quality graphene transistor technology

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49

Firek, Piotr, Jakub Szarafiński, Grzegorz Głuszko, and Jan Szmidt. "Field effect transistor with thin AlOxNy film as gate dielectric." Microelectronics International 37, no. 2 (2020): 103–7. http://dx.doi.org/10.1108/mi-11-2019-0074.

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Purpose The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy) is the perfectly controlled variability of the properties of these layers depending on their stoichiometry, which can be easily controlled by the parameters of the magnetron sputtering process. Therefore, a continuous spectrum of properties can be achieved from the specific values for oxide to the specific ones for nitride, thus opening a wide ra

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50

Lee, Hyunjae, Jung-Dong Park, and Changhwan Shin. "Performance Booster for Vertical Tunnel Field-Effect Transistor: Field-Enhanced High- $\kappa $ Layer." IEEE Electron Device Letters 37, no. 11 (2016): 1383–86. http://dx.doi.org/10.1109/led.2016.2606660.

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