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Journal articles on the topic 'Films of Cubic-GaN'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

SUWANNAHARN, Nattamon, Sakuntam SANORPIM, Suphakan KIJAMNAJSUK, Visittapong YORDSRI, Noppadon NUNTAWONG, and Kentaro ONABE. "Effect of Al Addition on Crystal Structure of AlGaN/GaN on GaAs (001) Substrate Grown by Metalorganic Vapor Phase Epitaxy." Journal of Metals, Materials and Minerals 32, no. 1 (2022): 41–47. http://dx.doi.org/10.55713/jmmm.v32i1.1240.

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Effects of Al addition on a structural phase modification in AlGaN/GaN films on GaAs substrate grown by MOVPE have been investigated. To examine the effect of Al addition, AlGaN/GaN films were grown with varied a molar flow ratio of TMAl to the total group-III elements of 0, 0.15, and 0.30. Quantity of hexagonal phase incorporation was evaluated by the ratios of integrated XRD intensity of hexagonal plane to cubic plane from reciprocal space mappings. The diffraction geometry factor was considered in the calculation. The results suggest that GaN primarily contains a hexagonal phase with a smal

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2

Oktyabrsky, S., K. Dovidenko, A. K. Sharma, V. Joshkin, and J. Narayan. "CRYSTAL STRUCTURE AND DEFECTS IN NITROGEN-DEFICIENT GaN." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 709–14. http://dx.doi.org/10.1557/s109257830000329x.

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We have studied crystal structure and associated defects in GaN films grown on sapphire under nitrogen-deficient conditions by metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). The structural quality of the PLD films grown at 750 °C was comparable with those grown by MOCVD at 1050 °C having threading dislocations density of about 1010 cm−2 at a film thickness 150-200 nm. Microstructure of the PLD films grown at temperatures above 780°C was found to be similar to that of nitrogen-deficient MOCVD films indicating the loss of nitrogen due to thermal decomposition o

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3

Goswami, Ramasis, Syed Qadri, Neeraj Nepal, and Charles Eddy. "Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures." Coatings 11, no. 4 (2021): 482. http://dx.doi.org/10.3390/coatings11040482.

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We demonstrate the growth of ultra-thin AlN films on Si (111) and on a GaN/sapphire (0001) substrate using atomic layer epitaxy in the temperature range of 360 to 420 °C. Transmission electron microscopy and X-ray diffraction were used to characterize the interfaces, fine scale microstructure, and the crystalline quality of thin films. Films were deposited epitaxily on Si (111) with a hexagonal structure, while on the GaN/sapphire (0001) substrate, the AlN film is epitaxial and has been deposited in a metastable zinc-blende cubic phase. Transmission electron microscopy reveals that the interfa

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4

Li, J. B., Hui Yang, L. X. Zheng, D. P. Xu, and Y. T. Wang. "Cubic InGaN Grown by MOCVD." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 239–43. http://dx.doi.org/10.1557/s1092578300002520.

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We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL pea

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5

Kim, Chong Cook, Jung Ho Je, Min-Su Yi, and Do Young Noh. "Structural evolution of GaN during initial stage MOCVD growth." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 252–58. http://dx.doi.org/10.1557/s109257830000435x.

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The structural evolution of GaN films during the initial growth process of metalorganic chemical vapor deposition (MOCVD) - low temperature nucleation layer growth, annealing, and high temperature epitaxial growth - was investigated in a synchrotron x-ray scattering experiment. The nucleation layer grown at 560°C that was predominantly cubic GaN consisted of tensile-strained aligned domains and relaxed misaligned domains. The hexagonal GaN, transformed from the cubic GaN during annealing to 1100 °C, showed disordered stacking. The atomic layer spacing decreased as the fraction of the hexagonal

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6

Binks, D. J., P. Dawson, R. A. Oliver, and D. J. Wallis. "Cubic GaN and InGaN/GaN quantum wells." Applied Physics Reviews 9, no. 4 (2022): 041309. http://dx.doi.org/10.1063/5.0097558.

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LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead in the cubic phase is a promising alternative because, compared to hexagonal GaN, it benefits from a reduced bandgap and is free of the strong polarization fields that can reduce the radiative recombination rate. Initial attempts to grow cubic GaN in the 1990s employed molecular beam epitaxy, but now, metal-organic chemical vapor deposition can also be used.

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7

Bentoumi, G., A. Deneuville, E. Bustarret, B. Daudin, and G. Feuillet. "Strain in cubic GaN films versus residual hexagonal GaN content." Thin Solid Films 364, no. 1-2 (2000): 114–18. http://dx.doi.org/10.1016/s0040-6090(99)00954-2.

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8

Zhang, Chun Guang. "Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition." Materials Science Forum 971 (September 2019): 79–84. http://dx.doi.org/10.4028/www.scientific.net/msf.971.79.

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As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thi

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9

Fathy, Marwa, Sara Gad, Badawi Anis, and Abd El-Hady B. Kashyout. "Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films." Micromachines 12, no. 10 (2021): 1240. http://dx.doi.org/10.3390/mi12101240.

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In this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and optical properties are carried out with different techniques to investigate the main featured properties of GaN bulk alloys and their thin films. Field emission scanning electron microscopy (FESEM) delivered images in bulk structures that show micro rods with an average diameter of 0.98 µm, while thei

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10

Cordier, Yvon, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski, and Thierry Chassagne. "Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates." Materials Science Forum 600-603 (September 2008): 1277–80. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1277.

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Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the electrical behavior of these structures show the feasibili

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11

Goldys, E. M., M. Godlewski, R. Langer, and A. Barski. "Surface morphology of cubic and wurtzite GaN films." Applied Surface Science 153, no. 2-3 (2000): 143–49. http://dx.doi.org/10.1016/s0169-4332(99)00342-6.

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12

Luna, Edgar López, and Miguel Ángel Vidal. "Review of the Properties of GaN, InN, and Their Alloys Obtained in Cubic Phase on MgO Substrates by Plasma-Enhanced Molecular Beam Epitaxy." Crystals 14, no. 9 (2024): 801. http://dx.doi.org/10.3390/cryst14090801.

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Gallium nitride (GaN) semiconductors and their broadband InGaN alloys in their hexagonal phase have been extensively studied over the past 30 years and have allowed the development of blue-ray lasers, which are essential disruptive developments. In addition to high-efficiency white light-emitting diodes, which have revolutionized lighting technologies and generated a great industry around these semiconductors, several transistors have been developed that take advantage of the characteristics of these semiconductors. These include power transistors for high-frequency applications and high-power

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13

Lazarov, V. K., M. M. Goetz, D. P. Robertson, et al. "HRTEM Determination of Cubic GaN Formation in MBE Grown Mn/GaN Films." Microscopy and Microanalysis 9, S02 (2003): 460–61. http://dx.doi.org/10.1017/s143192760344230x.

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14

Pant, P., J. Narayan, A. Wushuer, and M. H. Manghnani. "Comparative Raman and HRTEM Study of Nanostructured GaN Nucleation Layers and Device Layers on Sapphire (0001)." Journal of Nanoscience and Nanotechnology 8, no. 11 (2008): 5985–92. http://dx.doi.org/10.1166/jnn.2008.18372.

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Raman spectroscopy in conjunction with high-resolution transmission electron microscopy (HRTEM) has been used to study structural characteristics and strain distribution of the nanostructured GaN nucleation layer (NL) and the GaN device layer on (0001) sapphire substrates used for light-emitting diodes and lasers. Raman peaks corresponding to the cubic and the hexagonal phase of GaN are observed in the Raman spectrum from 15 nm and 45 nm NLs. A comparison of the peak intensities for the cubic and hexagonal phases of GaN in the NLs suggests that the cubic phase is dominant in the 15 nm NL and t

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15

Chichibu, Shigefusa, Hajime Okumura, Shuji Nakamura, et al. "Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films." Japanese Journal of Applied Physics 36, Part 1, No. 3B (1997): 1976–83. http://dx.doi.org/10.1143/jjap.36.1976.

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16

Schikora, D., M. Hankeln, D. J. As, et al. "Epitaxial growth and optical transitions of cubic GaN films." Physical Review B 54, no. 12 (1996): R8381—R8384. http://dx.doi.org/10.1103/physrevb.54.r8381.

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17

Lallaizon, C., P. Schieffer, B. Lépine, et al. "Epitaxial growth of Fe films on cubic GaN(001)." Journal of Crystal Growth 240, no. 1-2 (2002): 236–40. http://dx.doi.org/10.1016/s0022-0248(02)00834-5.

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18

Hiroyama, Yuichi, and Masao Tamura. "Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 155–60. http://dx.doi.org/10.1557/s1092578300002386.

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We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2 gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epitaxial growth of β-GaN on thus SiC-formed Si substrates. At the highest GaN growth rate of 110 nm/h ( a Ga-cell temperature of 950 °C), β-GaN layers grown at a substrate temperature of 700 °C show a nearl

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19

Cui, Y., V. K. Lazorov, M. M. Goetz, et al. "Cubic GaN formation in Mn/GaN multilayer films grown on 6H-SiC(0001)." Applied Physics Letters 82, no. 26 (2003): 4666–68. http://dx.doi.org/10.1063/1.1586455.

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20

Sarney, W. L., L. Salamanca-Riba, V. Ramachandran, R. M. Feenstra, and D. W. Greve. "TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 238–44. http://dx.doi.org/10.1557/s1092578300004336.

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GaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films’ features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despi

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21

Zhou, W. L., and P. Pirouz. "Characterization of Chemically Vapor Deposited GaN on Sic on a Simox Substrate." Microscopy and Microanalysis 3, S2 (1997): 487–88. http://dx.doi.org/10.1017/s1431927600009326.

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GaN has been intensively studied because of its potential applications for the fabrication of blue- or ultraviolet-light emitting devices. Sapphire (α-Al2O3) is generally used as the substrate for growth of GaN film. However, the large lattice mismatch between GaN and Al2O3is a possible cause of the large defect density in the GaN films. Consequently, alternative substrates are being studied with the aim of growing films of lesser defect densities and improved opto-electronic properties. In this paper, we report a transmission electron microscopy (TEM) study of a GaN film grown on cubic SiC wh

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22

Freitas, J. A., and James C. Culbertson. "(Invited) Properties of Cubic GaN Films Deposited on c-BN/Diamond Templates." ECS Meeting Abstracts MA2025-01, no. 35 (2025): 1674. https://doi.org/10.1149/ma2025-01351674mtgabs.

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Cubic GaN (c-GaN) has attracted increasing interest because has several intrinsic advantages over its wurtzite-GaN polymorph. Namely, no polarization in the <100> growth direction, smaller bandgap, lighter electron and heavy hole effective masses, larger optical gain, shorter radiative recombination lifetime, smaller p-doping activation energy (Mg acceptor), higher hole mobility, and larger conduction band offset. Consequently, c-GaN could enable the next-generation of high efficiency visible light-emitting diodes, normally-off AlGaN/GaN high speed power transistors, and resonant tunnel

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23

Pezoldt, Jörg, Rolf Grieseler, Thorsten Schupp, Donat J. As, and Peter Schaaf. "Mechanical Properties of Cubic SiC, GaN and AlN Thin Films." Materials Science Forum 717-720 (May 2012): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.513.

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Cubic polytypes of SiC, GaN and AlN were grown on silicon by molecular beam epitaxy. The mechanical properties of the epitaxial layers were investigated by nanoindentation. For 3C-SiC grown on Si(111) and Si(100) a dependence of the mechanical properties on the surface preparation with germanium prior to the carbonization was obtained.

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24

Kakuda, Masahiro, Kenzo Makino, Takashi Ishida, Shigeyuki Kuboya, and Kentaro Onabe. "MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer." physica status solidi (c) 9, no. 3-4 (2012): 558–61. http://dx.doi.org/10.1002/pssc.201100395.

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25

As, D. J., T. Simonsmeier, J. Busch, et al. "P- and N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 233–38. http://dx.doi.org/10.1557/s1092578300002519.

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P-type doping with Mg and n-type doping with Si of cubic GaN (c-GaN) epilayers is reported. Cubic GaN films are grown by rf-plasma assisted MBE on semi-insulating GaAs (001) substrates at a substrate temperature of 720°C. Elemental Mg and Si are evaporated from thermal effusions cells. Secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (PL) and temperature dependent Hall-effect measurements are used to study the incorporation, optical and electrical properties. A Mg related shallow donor-acceptor transiton at 3.04 eV with an acceptor activation energy of EA= 0.230 eV is

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26

MAHMOOD, H. M., M. A. ABDULLAH, A. RAMIZY, and A. S. MOHAMMED. "THE EFFECT OF SPIN COATING PARAMETERS ON GaN NANOSTRUCTURES THIN FILMS PROPERTIES DEPOSIT ON DIFFERENT SUBSTRATES." Digest Journal of Nanomaterials and Biostructures 15, no. 2 (2020): 587–91. http://dx.doi.org/10.15251/djnb.2020.152.587.

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GaN nanostructures with different layers were grown on quartz and silicon substrates, using the spin coating technique. The structural properties were studied by X-ray diffraction which indicated that the number and intensity of the peaks were changed as layers deposited changes. The cubic phase of GaN and the diffraction peaks of Ga2O3 were not observed; these results indicated that GaN output from the precursor was highly successful due to the complete transformation of all Ga2O3 layers into GaN ,.GaN morphological study was elaborated by field emission-scanning electron microscopy, the surf

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27

Wanarattikan, Pornsiri, Surang Sumnavadee, Sakuntam Sanorpim, and Kentaro Onabe. "Effects of Buffer Layer Growth Temperature on Micro-Structures in the Cubic GaN Films Grown on GaAs (001) Substrates by MOVPE." Key Engineering Materials 751 (August 2017): 507–11. http://dx.doi.org/10.4028/www.scientific.net/kem.751.507.

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c-GaN films on GaAs (001) substrates were investigated using TEM to verify effects of buffer layer growth temperature on micro-structures. Growth temperature of the GaN buffer layer was varied in a range of 550 to 600°C and GaN film was grown at high temperature (∼900°C). For GaN buffer layer at 550°C, the plan-view TEM micrographs of c-GaN films show high density of stacking faults (SFs) and dislocations. At the GaN/GaAs interface, the electron diffraction (ED) pattern demonstrated different type of single diffraction spots which include the high intensity of streaking. This results indicated

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28

Zhi, D., U. Tisch, S. H. Zamir, M. Wei, E. Zolotoyabko, and J. Salzman. "Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire." Journal of Electronic Materials 29, no. 4 (2000): 457–62. http://dx.doi.org/10.1007/s11664-000-0161-x.

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29

Wu, X. H., L. M. Brown, D. Kapolnek, et al. "The role of mixed cubic/hexagonal nucleation layers on threading dislocation reduction in epitaxial GaN films." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 646–47. http://dx.doi.org/10.1017/s0424820100165690.

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The defect density and their configuration in epitaxial GaN films on sapphire are strongly related to the optical and electrical properties of the films. The crystalline quality of GaN on sapphire can be greatly improved by introducing a low temperature GaN buffer layer. However, recent studies in our group demonstrate that the pre-growth substrate treatment can significantly change the defects structure and electron properties of the films. In this paper, we present our results on studies of the film microstructures and their corresponding nucleation layers. We propose a novel mechanism for d

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30

Jain, Aakash Kumar, Sushma Yadav, Meenal Mehra, Sameer Sapra, and Madhusudan Singh. "Solution-Processed Cubic GaN for Potential Lighting Applications." MRS Advances 4, no. 09 (2019): 567–74. http://dx.doi.org/10.1557/adv.2019.105.

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ABSTRACT:Cubic gallium nitride (GaN) is a wide bandgap semiconductor that exhibits a high crystallographic symmetry resulting in a lower inbuilt polarization which is useful for more efficient phosphor-free green light-emitting diodes. It has been grown using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), which produce highly ordered thin films on compatible substrates. In this work, we report the chemical synthesis of GaN using chemical metathesis reaction in diethyl ether with lithium nitride and anhydrous gallium chloride as precursors, inside a nitrogen g

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31

Ogura, Yuri, Yuta Arata, Hiroyuki Nishinaka, and Masahiro Yoshimoto. "Alloying In₂O₃ and Ga₂O₃ on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition." Japanese Journal of Applied Physics 61, SC (2022): SC1037. http://dx.doi.org/10.35848/1347-4065/ac4688.

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Abstract We studied the phase diagram of (In x Ga1−x )2O3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In x Ga1−x )2O3 thin films exhibited three different single-phase crystal structures depending on the value of x: orthorhombic (κ)-(In x Ga1−x )2O3 for x ≤ 0.186, hexagonal (hex)-(In x Ga1−x )2O3 for 0.409 ≤ x ≤ 0.634, and body-centered cubic (bcc)-(In x Ga1−x )2O3 for x ≥ 0.772. The optical bandgap of (In x Ga1−x )2O3 was tuned from 3.27 eV (bcc-In2O3) and 4.17

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32

Xu, Dapeng, Hui Yang, J. B. Li, et al. "Effect of Si doping on cubic GaN films grown on GaAs(100)." Journal of Crystal Growth 206, no. 1-2 (1999): 150–54. http://dx.doi.org/10.1016/s0022-0248(99)00365-6.

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Petalas, J., S. Logothetidis, S. Boultadakis, M. Alouani, and J. M. Wills. "Optical and electronic-structure study of cubic and hexagonal GaN thin films." Physical Review B 52, no. 11 (1995): 8082–91. http://dx.doi.org/10.1103/physrevb.52.8082.

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34

Kidalov, V. V., G. A. Sukach, A. S. Revenko, and A. D. Bayda. "Properties of cubic GaN films obtained by nitridation of porous GaAs(001)." physica status solidi (a) 202, no. 8 (2005): 1668–72. http://dx.doi.org/10.1002/pssa.200461215.

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Leyva Aranzabal, Mauricio A., and Carlos R. Cabrera. "Gallium Nitride Electrodeposition at Indium Tin Oxide and Fluorene Tin Oxide Electrodes in Ammonium Nitrate and Gallium Nitrate Aqueous Solution: New Findings." ECS Meeting Abstracts MA2024-02, no. 22 (2024): 1878. https://doi.org/10.1149/ma2024-02221878mtgabs.

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In several power electronics applications, gallium nitride (GaN) has established itself as a competitive alternative to silicon. However, the pricey growing epitaxial processes used in present GaN deposition procedures highlight the need for more accessible and alternative deposition methods. This study compared the use of indium tin oxide (ITO) and fluorine tin oxide (FTO) electrodes from a solution containing 0.1 M gallium nitrate (Ga(NO3)3) and 2.5 M ammonium nitrate (NH4NO3). Gallium nitride thin films were synthesized by potentiostatic electrochemical deposition (PECD). Chronoamperometry

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36

Kohno, M., T. Nakamura, T. Kataoka, R. Katayama, and K. Onabe. "Electrical conduction in cubic GaN films grown on GaAs(001) by RF-MBE." physica status solidi (c) 5, no. 6 (2008): 1805–7. http://dx.doi.org/10.1002/pssc.200778661.

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Jones, Kenneth A., T. S. Zheleva, R. D. Vispute, Shiva S. Hullavarad, M. Ervin, and S. Dhar. "Epitaxial TaC Films for the Selective Area Growth of SiC." Materials Science Forum 600-603 (September 2008): 183–86. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.183.

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At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000°C, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the hi

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38

LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, et al. "EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE." Acta Physica Sinica 49, no. 6 (2000): 1132. http://dx.doi.org/10.7498/aps.49.1132.

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39

Komiyama, Jun, Yoshihisa Abe, Shunichi Suzuki, and Hideo Nakanishi. "Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers." Journal of Applied Physics 100, no. 3 (2006): 033519. http://dx.doi.org/10.1063/1.2226988.

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40

Vilchis, H., V. D. Compeán-García, I. E. Orozco-Hinostroza, E. López-Luna, M. A. Vidal, and A. G. Rodríguez. "Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO." Thin Solid Films 626 (March 2017): 55–59. http://dx.doi.org/10.1016/j.tsf.2017.02.016.

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41

Boo, Jin-Hyo, Scott A. Ustin, and Wilson Ho. "Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers." Journal of Crystal Growth 189-190 (June 1998): 183–88. http://dx.doi.org/10.1016/s0022-0248(98)00222-x.

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SUDA, Jun, Tatsuro KUROBE, and Hiroyuki MATSUNAMI. "Growth of Cubic GaN by Metal Organic Molecular Beam Epitaxy." SHINKU 43, no. 4 (2000): 512–17. http://dx.doi.org/10.3131/jvsj.43.512.

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Sanorpim, Sakuntam, Ryuji Katayama, Kajornyod Yoodee, and Kentaro Onabe. "Growth mechanism and structural characterization of hexagonal GaN films grown on cubic GaN (111)/GaAs (111)B substrates by MOVPE." Journal of Crystal Growth 275, no. 1-2 (2005): e1023-e1027. http://dx.doi.org/10.1016/j.jcrysgro.2004.11.126.

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Kimura, R., J. Shike, A. Shigemori, K. Ishida, and K. Takahashi. "A New Approach to the Growth of Cubic GaN Films Using an AlN/GaN Ordered Alloy as a Buffer Layer." physica status solidi (a) 188, no. 2 (2001): 687–89. http://dx.doi.org/10.1002/1521-396x(200112)188:2<687::aid-pssa687>3.0.co;2-k.

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Chandrasekhar, D., D. J. Smith, S. Strite, M. E. Lin, and H. Morkoc. "Characterization of group Ill-nitrides by high-resolution electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 846–47. http://dx.doi.org/10.1017/s0424820100171961.

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Abstract:

The Group III-nitride semiconductors A1N, GaN, and InN are of interest for their potential applications in short wavelength optoelectronic devices. This interest stems from their direct wideband gapswhich range from 1.9 eV (InN), to 3.4 eV (GaN), to 6.2 eV (A1N). If high quality nitride films can besuccessfully grown, then optoelectronic devices with wavelengths ranging from the visible to the deepultraviolet region of the electromagnetic spectrum are theoretically possible. Recently, LED's basedon GaN and InGaN QW's were demonstrated. Also, their excellent thermal properties make them ideal c

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Sun, X. L., Hui Yang, L. X. Zheng, et al. "Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)." Applied Physics Letters 74, no. 19 (1999): 2827–29. http://dx.doi.org/10.1063/1.124027.

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Compeán-García, V. D., H. Moreno-García, E. López-Luna, et al. "Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions." Materials Science in Semiconductor Processing 93 (April 2019): 196–200. http://dx.doi.org/10.1016/j.mssp.2018.12.019.

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As, Donat J., and Christian Mietze. "MBE growth and applications of cubic AlN/GaN quantum wells." physica status solidi (a) 210, no. 3 (2012): 474–79. http://dx.doi.org/10.1002/pssa.201200653.

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As, D. J., S. Potthast, J. Fernandez, K. Lischka, H. Nagasawa, and M. Abe. "Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates." Microelectronic Engineering 83, no. 1 (2006): 34–36. http://dx.doi.org/10.1016/j.mee.2005.10.020.

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Liu, H. F., H. Chen, Z. Q. Li, et al. "MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates." Journal of Crystal Growth 218, no. 2-4 (2000): 191–96. http://dx.doi.org/10.1016/s0022-0248(00)00574-1.

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