Relevant bibliographies by topics / Fluid phase epitaxy

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Fluid phase epitaxy'

Author: Grafiati
Published: 28 May 2022
Last updated: 31 July 2025

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Journal articles on the topic "Fluid phase epitaxy"

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Schulte, Kevin L., John Simon, Abhra Roy, et al. "Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor." Journal of Crystal Growth 434 (January 2016): 138–47. http://dx.doi.org/10.1016/j.jcrysgro.2015.10.033.

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Deura, Momoko, Fumitaka Ichinohe, Yu Arai, Kenichi Shiohama, Akira Hirako, and Kazuhiro Ohkawa. "Investigation of Growth Mechanism for InGaN by Metal–Organic Vapor Phase Epitaxy Using Computational Fluid Simulation." Japanese Journal of Applied Physics 52, no. 8S (2013): 08JB13. http://dx.doi.org/10.7567/jjap.52.08jb13.

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Matsumoto, Takashi, and Takahiro Nakamura. "Highly uniform InGaAsP growth by dual-fluid-layer structure metalorganic vapor phase epitaxy reactor with atmospheric pressure." Journal of Crystal Growth 145, no. 1-4 (1994): 622–29. http://dx.doi.org/10.1016/0022-0248(94)91117-7.

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Tokoi, Hirooki, Atsushi Ohtake, Kazutami Tago, Kazutoshi Watanabe, and Tomoyoshi Mishima. "Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-Phase Epitaxy." Journal of The Electrochemical Society 159, no. 5 (2012): D270—D275. http://dx.doi.org/10.1149/2.jes034205.

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Hirako, Akira, Kazuhide Kusakabe, and Kazuhiro Ohkawa. "Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2System: A Computational Fluid Dynamics Simulation Study." Japanese Journal of Applied Physics 44, no. 2 (2005): 874–79. http://dx.doi.org/10.1143/jjap.44.874.

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6

Armour, E. A., D. Byrnes, R. A. Arif, et al. "Effect of Growth Pressure and Gas-Phase Chemistry on the Optical Quality of InGaN/GaN Multi-Quantum Wells." MRS Proceedings 1538 (2013): 341–51. http://dx.doi.org/10.1557/opl.2013.505.

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ABSTRACTBlue light-emitting diodes (LED's), utilizing InGaN-based multi-quantum well (MQW) active regions deposited by organometallic chemical vapor epitaxy (OMVPE), are one of the fundamental building-blocks for current solid-state lighting applications. Studies [1,2] have previously been conducted to explore the optical and physical properties of the active MQW's over a variety of different OMVPE growth conditions. However, the conclusions of these papers have often been contradictory, possibly due to a limited data set or lack of understanding of the fundamental fluid dynamics and gas-phase
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Kuech, T. F., Shulin Gu, Ramchandra Wate, et al. "The Chemistry of GaN Growth." MRS Proceedings 639 (2000). http://dx.doi.org/10.1557/proc-639-g1.1.

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ABSTRACTThe development of new chemically based growth techniques has opened the range of possible GaN applications. This paper reviews some of the challenges in the chemically based growth of GaN and related materials. Ammonothermal-based growth, hydride vapor phase epitaxy and metal organic vapor phase epitaxy (MOVPE) are chemically complex systems wherein the underlying mechanisms of growth are not well understood at present. All these systems require substantial experimental and theoretical efforts to determine the nature and kinetics of GaN growth. In the case of metal organic vapor phase
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Kim, Changsung Sean, Jongpa Hong, Jihye Shim, et al. "Numerical and Experimental Study on Metal Organic Vapor-Phase Epitaxy of InGaN∕GaN Multi-Quantum-Wells." Journal of Fluids Engineering 130, no. 8 (2008). http://dx.doi.org/10.1115/1.2956513.

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A numerical and experimental study has been performed to characterize the metal organic vapor-phase epitaxy (MOVPE) growth of InGaN∕GaN multi-quantum-wells. One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes using three different reactors, vertical, horizontal, and planetary. Computational fluid dynamics (CFD) simulations considering gas-phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulat
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Hanser, Andrew, Colin Wolden, William Perry та ін. "Diluent Gas Effects on Properties of Ain and GaN Thin Films Grown by Metalorganic Vapor Phase Epitaxy on α(6H)-SiC Substrates". MRS Proceedings 482 (1997). http://dx.doi.org/10.1557/proc-482-149.

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AbstractThin films of AIN and GaN were deposited on α(6H)-SiC(0001) wafers using metalorganic vapor phase epitaxy (MOVPE) and H2 and N2 diluents. A computational fluid dynamic model of the deposition process was used to analyze the film growth conditions for both diluents. Low temperature (12 K) photoluminescence of the GaN films grown in N2 had peak intensities and full widths at half maximum of ∼7 meV which were equal to or better than those films grown in H2. Cross-sectional and plan-view transmission electron microscopy of films grown in both diluents showed similar microstructures with a
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Dissertations / Theses on the topic "Fluid phase epitaxy"

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Цибуленко, В. В., та С. В. Шутов. "Критичні напруження в підкладці, що виникають при вирощуванні імпульсними методами рідиннофазної епітаксії". Thesis, Сумський державний університет, 2017. http://essuir.sumdu.edu.ua/handle/123456789/64309.

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При використанні імпульсних методів рідиннофазної епітаксії контакт охолодженої підкладки з розчином-розплавом призводить до виникнення градієнту температури по її товщині. При цьому формуються механічні напруження, які можуть призвести до руйнування підкладки. Метою роботи є дослідження напружень, що виникають по товщині підкладки, при використанні імпульсних методів рідиннофазної епітаксії. Моделювання проведено для системи Gе-GaAs в діапазоні температур 450÷850 оС. Товщина підкладки – 380 мкм, її початкова температура – 27 оС, товщина Ga-Ge розчину-розплаву – 3500 мкм.
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Galindo, Virginie. "Synthèse par MOCVD (conventionnelle et à injection), caractérisations structurale et physique de films supraconducteurs d'YBa2Cu3O(7-(delta)) et de multicouches YBa2Cu3O(7-(delta))/PrBa2Cu3O(7-(delta)." Grenoble INPG, 1998. http://www.theses.fr/1998INPG0167.

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Deux types de reacteurs de depot chimique en phase vapeur ont ete utilises pour la realisation de films minces d'yba#2cu#3o#7## et prba#2cu#3o#7# ## #, ainsi que de multicouches alternant ces deux composes. La source du premier reacteur est constituee de quatre fours contenant chacun un des precurseurs organometallique (m-tetramethyl-heptane-dionate) sous forme de poudre. La source du second reacteur est constituee d'un reservoir contenant un melange liquide solvant - precurseur, sous pression, a temperature ambiante, relie a une micro-vanne ou injecteur. Cette derniere source permet de contro
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Conference papers on the topic "Fluid phase epitaxy"

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Cai, D., and L. L. Zheng. "Numerical Study of Transport and Reaction Phenomena in GaN Vapor Phase Epitaxy." In ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. ASMEDC, 2005. http://dx.doi.org/10.1115/ht2005-72337.

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A vapor phase epitaxy (VPE) system has been designed to grow high quality gallium nitride layers under the deposition temperature of 990°C and the pressure range of 200–800 Torr. For the better understanding of the deposition mechanism of GaN layers, a numerical model that is capable of describing multi-component fluid flow, gas/surface chemistry, conjugate heat transfer, thermal radiation, and species transport, has been developed to help in design and optimization of the epitaxy growth system. The vacuum area between heaters and reactor tube is simulated as a solid body with small thermal co
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Cai, D., B. Wu, L. L. Zheng, H. Zhang, W. J. Mecouch, and Z. Sitar. "Modeling of a Gallium Nitride Epitaxy Growth System." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-59819.

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An iodine vapor phase epitaxy (IVPE) system has been designed and built at North Carolina State University to grow high quality thick gallium nitride layer at the growth rate up to 80 μm/h with the deposition temperature of 1010 °C and the pressure of 200 Torr. In order to optimize the growth process, a numerical model, which is capable of describing multi-component fluid flow, gas/surface chemistry, conjugate heat transfer, radiation heat transfer and multi-species transport, has been developed to help in design and optimization of the IVPE reactor. The gallium source weight reduce rate is co
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Cai, D., L. L. Zheng, and H. Zhang. "Modeling of Multi-Species Transfer During Aluminum Nitride Vapor Growth." In ASME 2004 Heat Transfer/Fluids Engineering Summer Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/ht-fed2004-56394.

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AlN has attracted much attention in the past few years as a highly promising material for electronic and opto-electronic device applications. A halide vapor phase epitaxy (HVPE) system has been designed to grow high quality aluminum nitride layers at the growth rate up to 60 μm/h with the deposition temperature of 1000–1100°C and the pressure ranging of 5.5–760 Torr [1]. A 3-D numerical model that is capable of describing multi-component fluid flow, surface chemistry, conjugate heat transfer, and species transport has been developed to help in design and optimization of the epitaxy growth syst
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Kim, Changsung Sean, Jongpa Hong, Jihye Shim, et al. "Numerical and Experimental Study on Metal Organic Vapor Phase Epitaxy of InGaN/GaN Multi Quantum Wells." In ASME/JSME 2007 5th Joint Fluids Engineering Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/fedsm2007-37115.

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A numerical and experimental study has been performed to characterize the metal organic vapor phase epitaxy (MOVPE) growth of InGaN/GaN multi-quantum wells (MQW). One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes (LED) using three different reactors, vertical, horizontal and planetary. Computational fluids dynamic (CFD) simulations considering gas phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of
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