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Relevant bibliographies by topics / Focused ion beam nanolithography

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Academic literature on the topic 'Focused ion beam nanolithography'

Author: Grafiati

Published: 4 June 2025

Last updated: 23 June 2025

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Journal articles on the topic "Focused ion beam nanolithography"

1

Gierak, J., C. Vieu, H. Launois, G. Ben Assayag, and A. Septier. "Focused ion beam nanolithography on AlF3 at a 10 nm scale." Applied Physics Letters 70, no. 15 (1997): 2049–51. http://dx.doi.org/10.1063/1.118810.

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Späth, Andreas. "Additive Nano-Lithography with Focused Soft X-rays: Basics, Challenges, and Opportunities." Micromachines 10, no. 12 (2019): 834. http://dx.doi.org/10.3390/mi10120834.

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Focused soft X-ray beam induced deposition (FXBID) is a novel technique for direct-write nanofabrication of metallic nanostructures from metal organic precursor gases. It combines the established concepts of focused electron beam induced processing (FEBIP) and X-ray lithography (XRL). The present setup is based on a scanning transmission X-ray microscope (STXM) equipped with a gas flow cell to provide metal organic precursor molecules towards the intended deposition zone. Fundamentals of X-ray microscopy instrumentation and X-ray radiation chemistry relevant for FXBID development are presented in a comprehensive form. Recently published proof-of-concept studies on initial experiments on FXBID nanolithography are reviewed for an overview on current progress and proposed advances of nanofabrication performance. Potential applications and advantages of FXBID are discussed with respect to competing electron/ion based techniques.

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Lewis, George. "Summary Abstract: An ion beam lithography system for nanolithography with a focused H+2 ion probe." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 6, no. 1 (1988): 239. http://dx.doi.org/10.1116/1.584013.

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Gierak, J., E. Cambril, M. Schneider, et al. "Very high-resolution focused ion beam nanolithography improvement: A new three-dimensional patterning capability." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 6 (1999): 3132. http://dx.doi.org/10.1116/1.590967.

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Hashimoto, Masahiro. "Application of dual-functional MoO[sub 3]/WO[sub 3] bilayer resists to focused ion beam nanolithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 5 (1998): 2767. http://dx.doi.org/10.1116/1.590269.

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6

Orús, Pablo, Fabian Sigloch, Soraya Sangiao, and José María De Teresa. "Low-resistivity, high-resolution W-C electrical contacts fabricated by direct-write focused electron beam induced deposition." Open Research Europe 2 (August 25, 2022): 102. http://dx.doi.org/10.12688/openreseurope.15000.1.

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Background: The use of a focused ion beam to decompose a precursor gas and produce a metallic deposit is a widespread nanolithographic technique named focused ion beam induced deposition (FIBID). However, such an approach is unsuitable if the sample under study is sensitive to the somewhat aggressive exposure to the ion beam, which induces the effects of surface amorphization, local milling, and ion implantation, among others. An alternative strategy is that of focused electron beam induced deposition (FEBID), which makes use of a focused electron beam instead, and in general yields deposits with much lower metallic content than their FIBID counterparts. Methods: In this work, we optimize the deposition of tungsten-carbon (W-C) nanowires by FEBID to be used as electrical contacts by assessing the impact of the deposition parameters during growth, evaluating their chemical composition, and investigating their electrical response. Results: Under the optimized irradiation conditions, the samples exhibit a metallic content high enough for them to be utilized for this purpose, showing a room-temperature resistivity of 550 μΩ cm and maintaining their conducting properties down to 2 K. The lateral resolution of such FEBID W-C metallic nanowires is 45 nm. Conclusions: The presented optimized procedure may prove a valuable tool for the fabrication of contacts on samples where the FIBID approach is not advised

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Defoort-Levkov, Grégoire R. N., Alan Bahm, and Patrick Philipp. "Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations." Beilstein Journal of Nanotechnology 13 (September 21, 2022): 986–1003. http://dx.doi.org/10.3762/bjnano.13.86.

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Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining, and nanoprinting. For many of these applications, a precise control of ion-beam-induced processes is essential. The effect of contaminations on these processes has not been thoroughly explored but can often be substantial, especially for ultralow impact energies in the sub-keV range. In this paper we investigate by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers (i.e., water adsorbed on a silicon surface) influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence to close to grazing incidence. For the simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not significantly changed by the contamination, but the fraction of hydrogen and oxygen atoms that is sputtered largely depends on the incidence angle. This fraction is the largest for incidence angles between 70 and 80° defined with respect to the sample surface. Overall, it changes from 25% to 65%.

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Bezirganyan, Hakob P., Siranush E. Bezirganyan, Hayk H. Bezirganyan, and Petros H. Bezirganyan. "Two-Dimensional Ultrahigh-Density X-ray Optical Memory." Journal of Nanoscience and Nanotechnology 7, no. 1 (2007): 306–15. http://dx.doi.org/10.1166/jnn.2007.18027.

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Most important aspect of nanotechnology applications in the information ultrahigh storage is the miniaturization of data carrier elements of the storage media with emphasis on the long-term stability. Proposed two-dimensional ultrahigh-density X-ray optical memory, named X-ROM, with long-term stability is an information carrier basically destined for digital data archiving. X-ROM is a semiconductor wafer, in which the high-reflectivity nanosized X-ray mirrors are embedded. Data are encoded due to certain positions of the mirrors. Ultrahigh-density data recording procedure can e.g., be performed via mask-less zone-plate-array lithography (ZPAL), spatial-phase-locked electron-beam lithography (SPLEBL), or focused ion-beam lithography (FIB). X-ROM manufactured by nanolithography technique is a write-once memory useful for terabit-scale memory applications, if the surface area of the smallest recording pits is less than 100 nm2. In this case the X-ROM surface-storage capacity of a square centimetre becomes by two orders of magnitude higher than the volumetric data density really achieved for three-dimensional optical data storage medium. Digital data read-out procedure from proposed X-ROM can e.g., be performed via glancing-angle incident X-ray micro beam (GIX) using the well-developed X-ray reflectometry technique. In presented theoretical paper the crystal-analyser operating like an image magnifier is added to the set-up of X-ROM data handling system for the purpose analogous to case of application the higher numerical aperture objective in optical data read-out system. We also propose the set-up of the X-ROM read-out system based on more the one incident X-ray micro beam. Presented scheme of two-beam data handling system, which operates on two mutually perpendicular well-collimated monochromatic incident X-ray micro beams, essentially increases the reliability of the digital information read-out procedure. According the graphs of characteristic functions presented in paper, one may choose optimally the incident radiation wavelength, as well as the angle of incidence of X-ray micro beams, appropriate for proposed digital data read-out procedure.

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Pellegrino, Paolo, Alessandro Paolo Bramanti, Isabella Farella, et al. "Pulse-Atomic Force Lithography: A Powerful Nanofabrication Technique to Fabricate Constant and Varying-Depth Nanostructures." Nanomaterials 12, no. 6 (2022): 991. http://dx.doi.org/10.3390/nano12060991.

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The widespread use of nanotechnology in different application fields, resulting in the integration of nanostructures in a plethora of devices, has addressed the research toward novel and easy-to-setup nanofabrication techniques to realize nanostructures with high spatial resolution and reproducibility. Owing to countless applications in molecular electronics, data storage, nanoelectromechanical, and systems for the Internet of Things, in recent decades, the scientific community has focused on developing methods suitable for nanopattern polymers. To this purpose, Atomic Force Microscopy-based nanolithographic techniques are effective methods that are relatively less complex and inexpensive than equally resolute and accurate techniques, such as Electron Beam lithography and Focused Ion Beam lithography. In this work, we propose an evolution of nanoindentation, named Pulse-Atomic Force Microscopy, to obtain continuous structures with a controlled depth profile, either constant or variable, on a polymer layer. Due to the modulation of the characteristics of voltage pulses fed to the AFM piezo-scanner and distance between nanoindentations, it was possible to indent sample surface with high spatial control and fabricate highly resolved 2.5D nanogrooves. That is the real strength of the proposed technique, as no other technique can achieve similar results in tailor-made graded nanogrooves without the need for additional manufacturing steps.

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Ruchhoeft, P., J. C. Wolfe, J. L. Torres, and R. Bass. "Scattering mask concept for ion-beam nanolithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20, no. 6 (2002): 2705. http://dx.doi.org/10.1116/1.1520568.

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Dissertations / Theses on the topic "Focused ion beam nanolithography"

1

Saifullah, Mohammad Sultan Mohiddin. "Electron and ion beam nanolithography using inorganic resists." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624675.

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Latif, Adnan. "Nanofabrication using focused ion beam." Thesis, University of Cambridge, 2000. https://www.repository.cam.ac.uk/handle/1810/34605.

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Focused ion beam (FIB) technique uses a focused beam of ions to scan the surface of aspecimen, analogous to the way scanning electron microscope (SEM) utilizes electrons. Recent developments in the FIB technology have led to beam spot size below 10 nm,which makes FIB suitable for nanofabrication. This project investigated thenanofabrication aspect of the FIB technique, with device applications perspective inseveral directions. Project work included construction of an in-situ FIB electricalmeasurement system and development of its applications, direct measurements ofnanometer scale FIB cuts and fabrication and testing of lateral field emission devices. Research work was performed using a number of materials including Al, Cr, SiO2, Si3N4and their heterostructures. Measurements performed included in-situ resistometricmeasurements, which provided milled depth information by monitoring the resistancechange of a metal track while ion milling it. The reproducibly of this method wasconfirmed by repeating experiments and accuracy was proven by atomic force microscopy(AFM). The system accurately monitored the thickness of 50 nm wide and 400 nm thick(high aspect ratio) Nb tracks while ion milling them. Direct measurements of low aspectratio nanometer scale FIB cuts were performed using AFM on single crystal Si,polycrystalline Nb and an amorphous material. These experiments demonstrated theimportance of materials aspects for example the presence of grains for cuts at this scale. Anew lateral field emission device (in the plane of the chip) was fabricated, as FIB offersseveral advantages for these devices such as control over sharpness and decrease in anodeto-cathode spacing. FIB fabrication achieved field emission tip sharpness below 50 nm andanode-to-cathode spacing below 100 nm. For determining the field emission characteristicsof the devices, a low current (picoampere) measurement system was constructed anddevices operated in ultra high vacuum (10-9 mbar) in picoampere range. One devicefabricated using a FIB sharpening process had a turn on voltage of 57 V.

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Naik, Jay Prakash. "Nanowires fabricated by Focused Ion Beam." Thesis, University of Birmingham, 2013. http://etheses.bham.ac.uk//id/eprint/4638/.

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This thesis reports research on nanowires fabricated by FIB lithography with experiments to understand their mechanical, electrical and hydrodynamic properties. Au nanowires fabricated on Si\(_3\)N\(_4\) membranes with width below 50nm exhibit liquid like instabilities and below \(\sim\)20nm the instabilities grow destroying the nanowires due to the Rayleigh- Plateau instability. Stability is better in the case for Si substrates than for the insulators Si0\(_2\) and Si\(_3\)N\(_4\). A series of 4-terminal resistance measurements were carried out on a "platinum" nanowire grown by FIB-induced decomposition of an organometallic precursor. Such nanowires are found to be a two phase percolating system, containing up to 70% by volume carbon. They have unexpected temperature behaviour which is explained using a percolation model with Kirkpatrick conduction in the presence of temperature induced strain. Au nanowire bridges of very small diameter were probed using AFM to investigate their deformation and fracture strength. Below a diameter \(\sim\)50nm, the mechanical properties are consistent with liquid-like behaviour. After reaching the fracture, the gold molecules from the bridge retract towards the fixed ends; rebinding of the gold causing reforming of the nanowire bridge can occur. FIB fabrication was also used to form a thermal bimorph MEMS cantilever which was investigated by AFM during actuation.

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Wong, Ka Chun. "Focused Ion Beam Nanomachining of Thermoplastic Polymers." Thesis, North Carolina State University, 2013. http://pqdtopen.proquest.com/#viewpdf?dispub=3538536.

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<p> Commercially available Ga<sup>+</sup> focused ion beam (FIB) instruments with nanometer size probe allows for in situ materials removal (sputtering) and addition (deposition) on a wide range of material. These spatially precise processes have enabled a wide range of nanofacbrication operations (e.g. specimen preparation for analysis by scanning electron microscope, transmission electron microscope, and secondary ion mass spectrometer). While there exists an established knowledge of FIB methods for sample preparation of hard materials, but FIB methodology remain underdeveloped for soft materials such as biological and polymeric materials. </p><p> As FIB is increasingly utilized for specimen preparation of polymeric materials, it is becoming necessary to formulate an information base that will allow established FIB techniques to be generalized to this spectrum of materials. A thorough understanding of the fundamental ion-solid interactions that govern the milling process can be instrumental. Therefore, in an effort to make the existing procedures more universally applicable, the interrelationships between target material, variable processing parameters, and process efficiency of the milling phenomena are examined. The roles of beam current, distance (i.e. step size) between successive FIB beam dwell and the time it spent at each dwell point (i.e. pixel dwell time) are considered as applied to FIB nanomachining of four different thermoplastic polymers: 1. low density polyethylene (LDPE), 2. high density polyethylene (HDPE), 3. Polystyrene (PS), and 4. nylon 6 (PA6). Careful characterization of such relationships is used to explain observed phenomena and predict expected milling behaviors, thus allowing the FIB to be used more efficiently with reproducible results. Applications involving different types of polymer composite fiber are presented.</p>

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Sabouri, Aydin. "Nanofabrication by means of focused ion beam." Thesis, University of Birmingham, 2015. http://etheses.bham.ac.uk//id/eprint/5987/.

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Focused ion beam (FIB) systems have been used widely in micro/nano technology due to their unique capabilities. In this fabrication technique, ions are accelerated towards the sample surfaces and substrate atoms are removed. Despite the ubiquity of this method, several problems remain unsolved and are not fully understood. In this thesis, the effects of FIB machining and its halo effects on substrate are investigated. A novel detector which can perform measurements of the current density profile of the generated beam, was successfully demonstrated. The effect of ion solid interactions for 30keV Ga FIB are investigated through atomic force microscopy (AFM) and Raman spectroscopy, for various machining parameters such as current, dwell time and pixel spacing. The FIB implanted regions were also studied for use as a hard mask in plasma etching, and was found to be suitable for high speed patterning in large area fabrication of nano-featured surfaces for metamaterials. It was observed by controlling the implantation parameters, the ultra-thin structures could be made. These structures have wide range of applications such as nano-scale resonators with application of chemical and biological sensing, membranes with nano-pores for DNA translocation and fabrication of near field optical devices.

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Della, Ratta Anthony D. (Anthony David). "Focused ion beam induced deposition of copper." Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/12418.

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7

Shedd, Gordon M. 1954. "Focused ion beam assisted deposition of gold." Thesis, Massachusetts Institute of Technology, 1986. http://hdl.handle.net/1721.1/14947.

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Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 1986.<br>MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE.<br>Bibliography: leaves 75-76.<br>by Gordon M. Shedd.<br>M.S.

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Wang, H. "Focused-ion-beam growth of nanomechanical resonators." Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1417006/.

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Nanoscale mechanical resonators exhibit excellent sensitivity and therefore potential advantages for application as ultrasensitive mass sensors by comparison with micromachined cantilevers. We fabricated three dimensional vertical C-W-nanorods on silicon substrates by focussed ion beam induced deposition (FIB-CVD) and investigated the factors which affected the growth rate and smoothness of the nanorod sidewall, including the heating temperature of precursor gas and the ion beam current. We also discussed the effects on reducing the thickness of the nanorod with FIB milling, including the ion beam current, ion beam energy and ion incident angle. We fabricated a doubly-clamped beam and a singly-clamped beam by felling a vertical nanorod over a trench with FIB milling. We investigated the static mechanical properties (i.e. Young’s modulus) of doubly-clamped and singly-clamped nanorods by atomic force microscopy (AFM) with force displacement measurement. Since the optical signal reflected from a cantilever whose dimensions are sub-wavelength is very weak, it is difficult to measure the absolute nanoscale displacement of such cantilevers with an optical technique. We describe an electron microscope technique for measuring the absolute oscillation amplitude and resonance of nanomechanical resonators with a model-independent method. A piezo-actuator mounted in a field-emission scanning-electron microscope (SEM) is used to excite the nanomechanical resonator to vibrate. The secondary electron signal is recorded as the primary electron beam is scanned linearly over the resonator. An absolute oscillation amplitude as low as 5 nm can be resolved, this being comparable to the size (~1.5 nm) of the primary electron beam. The Q-factor of nanomechanical resonators was measured ranging 300 to 600. The mass resolution of the resonators was also estimated to the level of 1E-15 g.

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Hadfield, Robert Hugh. "Josephson junctions fabricated by focused ion beam." Thesis, University of Cambridge, 2002. https://www.repository.cam.ac.uk/handle/1810/104789.

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This thesis details recent work on an innovative new approach to Josephson junction fabrication. These junctions are created in low TC superconductor-normal metal bilayer tracks on a deep submicron scale using a Focused Ion Beam Microscope (FIB). The FIB is used to mill away a trench 50_nm wide in the upper layer of niobium superconductor (125 nm thick), weakening the superconducting coupling and resulting in a Josephson junction. With the aid of a newly developed in situ resistance measurement technique it is possible to determine the cut depth to a high degree of accuracy and hence gain insight into how this affects the resulting device parameters. Devices fabricated over a wide range of cut depths and copper normal metal layer thicknesses (0-175 nm) have been thoroughly characterized at 4.2 K in terms of current-voltage (I-V) characteristics, magnetic field- and microwave-response. In selected cases I-V characteristics have been studied over the full temperature range from TC down to 300 mK. Devices with resistively-shunted (RSJ) I-V characteristics and ICRN products above 50 μV at 4.2 K have been fabricated reproducibly. This work has been complemented by Transmission Electron Microscopy (TEM) studies that have allowed the microstructure of the individual devices to be inspected and confirm the validity of the in situ resistance measurement. The individual junction devices are promising candidates for use in the next generation of Josephson voltage standards. In collaboration with Dr. Sam Benz at the National Institute of Standards and Technology (NIST) in the U.S., series arrays of junctions have been fabricated and characterized. Phase-locking behaviour has been observed in arrays of 10 junctions of spacings 0.2 to 1.6 μm between 4.2 K and TC in spite of the relatively large spread in individual critical currents. Strategies for minimizing junction parameter spread and producing large-scale arrays are discussed. The opportunities offered by the FIB for the creation of novel device structures has not been overlooked. By milling a circular trench in the Nb Cu bilayer a Corbino geometry SNS junction is created. In this unique device the junction barrier is enclosed in a superconducting loop, implying that magnetic flux can only enter the barrier as quantized vorticies. This gives rise to a startling magnetic field response - with the entry of a vortex the critical current is suppressed from its maximum value to zero. Experimental results and theoretical modeling are reported. Possible future applications of this novel device geometry (which may be of relevance to Quantum Computing and to studies of Berry's phase effects) are considered.

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Kim, Songkil. "Engineering of carbon electronic devices using focused electron beam induced deposition (FEBID) of graphitic nanojoints." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53054.

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This thesis concerns development and characterization of the FEBID technique to improve interfacial properties at MWCNT/graphene-metal junctions by forming graphitic nanojoints using hydrocarbon precursors. A fabrication protocol for ultralow-resistant, Ohmic contacts at MWCNT-metal junctions with FEBID graphitic nanojoints was developed, based on an in-depth topological/ compositional/electrical material characterization, yielding high performance “end” contacts to multiple conducting channels of MWCNT interconnect. Using the FEBID technique as a contact fabrication tool, three fabrication strategies of electrical contacts between the mechanically exfoliated multilayer graphene and a metal interconnect using graphitic nanojoints were proposed and demonstrated experimentally, suggesting one of them, the post-deposited FEBID graphitic interlayer formation, as the most efficient strategy. A patterned CVD grown monolayer graphene, which is a promising material for large area graphene device fabrication, was contacted to metal electrodes through the FEBID graphitic interlayer, whose formation and chemical coupling to graphene and metal were theoretically and experimentally explored. The effects of FEBID process on the graphitic interlayer formation and graphene electronic devices were demonstrated through electrical measurements, including the transmission line method (TLM) measurements for separate evaluation of sheet and contact resistances. Modifications of the graphene channel as well as interfacial properties of the graphene-metal junctions were achieved, highlighting a unique promise of the FEBID technique as a tool for enhancing chemical, thermo-mechanical, and electrical properties of graphene-metal interfaces along with controllable tuning of doping states of the graphene channel.

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Books on the topic "Focused ion beam nanolithography"

1

Yao, Nan, ed. Focused Ion Beam Systems. Cambridge University Press, 2007. http://dx.doi.org/10.1017/cbo9780511600302.

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Nan, Yao, ed. Focused ion beam systems: Basics and applications. Cambridge University Press, 2007.

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Bachmann, Maja D. Manipulating Anisotropic Transport and Superconductivity by Focused Ion Beam Microstructuring. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51362-7.

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Córdoba Castillo, Rosa. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-02081-5.

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Orloff, Jon. High resolution focused ion beams: FIB and its applications ; the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. Kluwer Academic/Plenum Publishers, 2003.

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Orloff, Jon. High Resolution Focused Ion Beams: FIB and its Applications: The Physics of Liquid Metal Ion Sources and Ion Optics and Their Application to Focused Ion Beam Technology. Springer US, 2003.

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1934-, Swanson Lynwood, and Utlaut Mark William 1949-, eds. High resolution focused ion beams: FIB and its applications : the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. Kluwer Academic/Plenum Publishers, 2003.

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Foster, C. P. J. A comparison of electro discharge machining, laser & focused ion beam micromachining technologies. TWI, 1998.

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Fernandez-Pacheco, Amalio. Studies of Nanoconstrictions, Nanowires and Fe₃O₄ Thin Films: Electrical Conduction and Magnetic Properties. Fabrication by Focused Electron/Ion Beam. Springer-Verlag Berlin Heidelberg, 2011.

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Japan-U.S. Seminar on Focused Ion Beam Technology and Applications (1987 Osaka, Japan and Mie-ken, Japan). Proceedings of the Japan-U.S. Seminar on Focused Ion Beam Technology and Applications: 15-19 November 1987, Senri Hankyu Hotel, Osaka, and 20 November 1987, Shima Kanko Hotel, Mie Prefect, Japan. Edited by Harriott Lloyd R, Nihon Gakujutsu Shinkōkai, National Science Foundation (U.S.), and American Vacuum Society. Published for the American Vacuum Society by the American Institute of Physics, 1988.

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Book chapters on the topic "Focused ion beam nanolithography"

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Kalbitzer, S., Ch Wilbertz, and Th Miller. "Intense Focused Ion Beams for Nanostructurisation." In NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies. Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-015-8261-2_15.

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Stevie, F. A., L. A. Giannuzzi, and B. I. Prenitzer. "The Focused Ion Beam Instrument." In Introduction to Focused Ion Beams. Springer US, 2005. http://dx.doi.org/10.1007/0-387-23313-x_1.

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Bachmann, Maja D. "Focused Ion Beam Micro-machining." In Manipulating Anisotropic Transport and Superconductivity by Focused Ion Beam Microstructuring. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51362-7_2.

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Gierak, Jacques. "Focused Ion Beam Direct-Writing." In Lithography. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch4.

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Melngailis, J., A. D. Dubner, J. S. Ro, G. M. Shedd, H. Lezec, and C. V. Thompson. "Focused Ion Beam Induced Deposition." In Emerging Technologies for In Situ Processing. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-1409-4_17.

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Xu, Zong Wei, Fengzhou Fang, and Guosong Zeng. "Focused Ion Beam Nanofabrication Technology." In Handbook of Manufacturing Engineering and Technology. Springer London, 2014. http://dx.doi.org/10.1007/978-1-4471-4670-4_66.

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Cui, Zheng. "Nanofabrication by Focused Ion Beam." In Nanofabrication. Springer International Publishing, 2024. http://dx.doi.org/10.1007/978-3-031-62546-6_4.

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Xu, Zongwei, Fengzhou Fang, and Guosong Zeng. "Focused Ion Beam Nanofabrication Technology." In Handbook of Manufacturing Engineering and Technology. Springer London, 2013. http://dx.doi.org/10.1007/978-1-4471-4976-7_66-2.

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Kamaliya, Bhaveshkumar, and Rakesh G. Mote. "Nanofabrication Using Focused Ion Beam." In Advanced Machining Science. CRC Press, 2022. http://dx.doi.org/10.1201/9780429160011-9.

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Young, Richard J., and Mary V. Moore. "Dual-Beam (FIB-SEM) Systems." In Introduction to Focused Ion Beams. Springer US, 2005. http://dx.doi.org/10.1007/0-387-23313-x_12.

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Conference papers on the topic "Focused ion beam nanolithography"

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Choi, Tae-Youl, and Dimos Poulikakos. "Electron and Focused Ion Beams in Thermal Science and Engineering." In ASME 2008 Heat Transfer Summer Conference collocated with the Fluids Engineering, Energy Sustainability, and 3rd Energy Nanotechnology Conferences. ASMEDC, 2008. http://dx.doi.org/10.1115/ht2008-56097.

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Focused-ion-beam (FIB) is a useful tool for defining nanoscale structures. High energy heavy ions inherently exhibit destructive nature. A less destructive tool has been devised by using electron beam. FIB is mainly considered as an etching tool, while electron beam can be used for deposition purpose. In this paper, both etching and deposition method are demonstrated for applications in thermal science. Thermal conductivity of nanostructures (such as carbon nanotubes) was measured by using the FIB (and electron beam) nanolithography technique. Boiling characteristics was studied in a submicron heater that could be fabricated by using FIB.

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2

Srituravanich, W., N. Fang, C. Sun, S. Durant, M. Ambati, and X. Zhang. "Plasmonic Lithography." In ASME 2004 3rd Integrated Nanosystems Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/nano2004-46023.

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As the next-generation technology moves below 100 nm mark, the need arises for a capability of manipulation and positioning of light on the scale of tens of nanometers. Plasmonic optics opens the door to operate beyond the diffraction limit by placing a sub-wavelength aperture in an opaque metal sheet. Recent experimental works [1] demonstrated that a giant transmission efficiency (>15%) can be achieved by exciting the surface plasmons with artificially displaced arrays of sub-wavelength holes. Moreover the effectively short modal wavelength of surface plasmons opens up the possibility to overcome the diffraction limit in the near-field lithography. This shows promise in a revolutionary high throughput and high density optical lithography. In this paper, we demonstrate the feasibility of near-field nanolithography by exciting surface plasmon on nanostructures perforated on metal film. Plasmonic masks of hole arrays and “bull’s eye” structures (single hole surrounded by concentric ring grating) [2] are fabricated using Focused Ion Beam (FIB). A special index matching spacer layer is then deposited onto the masks to ensure high transmissivity. Consequently, an I-line negative photoresist is spun on the top of spacer layer in order to obtain the exposure results. A FDTD simulation study has been conducted to predict the near field profile [3] of the designed plasmonic masks. Our preliminary exposure test using these hole-array masks demonstrated 170 nm period dot array patterns, well beyond the resolution limit of conventional lithography using near-UV wavelength. Furthermore, the exposure result obtained from the bull’s eye structures indicated the characteristics of periodicity and polarization dependence, which confirmed the contribution of surface plasmons.

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3

Marrian, Christie R. K. "Electron Beam Nanolithography." In Microphysics of Surfaces: Nanoscale Processing. Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.mthb1.

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Motivated by trends in the microelectronics industry and the quest to investigate electronic and material properties in the quantum effect size regime, there is a strong drive to understand and overcome the limits of the processing required for microfabrication. At the beginning of the next century, the precision required in feature sizes for microelectronics manufacturing is projected to be close to 10 nm, i.e. about 25 atomic diameters. Still smaller feature sizes are needed for nanoelectronic device research. For example, to observe effects such as lateral resonant tunneling and coulomb blockade at close to room temperature, feature sizes below 10 nm are necessary. Central to any fabrication scheme for these dimensions is a lithographic step where a pattern is defined in a radiation sensitive material, commonly called the resist, and then replicated into the substrate to define a structure or device. Due to the availability of equipment and knowledge base, the preferred means for defining the smallest possible structures involves the use of a focused high energy beam of electrons.

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4

Melngailis, John. "Focused Ion Beam Microfabrication." In Medical Imaging II, edited by Arnold W. Yanof. SPIE, 1988. http://dx.doi.org/10.1117/12.945634.

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Stahl, Jack, Nathan Bartlett, and David Ruzic. "Stopping a tin ion beam with a background gas and plasma." In Optical and EUV Nanolithography XXXV, edited by Anna Lio and Martin Burkhardt. SPIE, 2022. http://dx.doi.org/10.1117/12.2619381.

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6

Thompson, William B., and Randall G. Lee. "Focused ion-beam process monitoring." In Micro - DL Tentative, edited by Michael T. Postek, Jr. SPIE, 1992. http://dx.doi.org/10.1117/12.59828.

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Deitz, Julia, Wyatt Hodges, Timothy Ruggles, et al. "Focused Ion Beam Nano-thermometry." In Microscopy and Microanalysis - Minneapolis, Minnesota, United States of America - July - 2023. US DOE, 2023. http://dx.doi.org/10.2172/2430568.

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8

Titze, Michael. "Focused Ion Beam Capabilities at the Sandia Ion Beam Laboratory." In Proposed for presentation at the CAARI 2022 in ,. US DOE, 2022. http://dx.doi.org/10.2172/2005887.

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Bielejec, Edward. "Updates from Sandia?s Ion Beam Lab: Focused Ion Beam Implantation." In Proposed for presentation at the 3rd Research Coordination Meeting Ion Beam Induced Spatio-Temporal Structural Evolution of Materials: Accelerators for a New Technology Era, CRP No: held April 25-29, 2022 in Berkeley, CA US. US DOE, 2022. http://dx.doi.org/10.2172/2002494.

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10

Milani, Marziale, Monica Ballerini, and Franco Squadrini. "Focused ion beam: moving toward nanobiotechnology." In BiOS 2000 The International Symposium on Biomedical Optics, edited by Shuming Nie, Eiichi Tamiya, and Edward S. Yeung. SPIE, 2000. http://dx.doi.org/10.1117/12.383351.

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Reports on the topic "Focused ion beam nanolithography"

1

Melngailis, John. Focused Ion Beam Implantation. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada249662.

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2

Hodges, Wyatt, Julia Deitz, Timothy Ruggles, et al. Plasma Focused Ion Beam Nanothermometry. Office of Scientific and Technical Information (OSTI), 2023. http://dx.doi.org/10.2172/2432030.

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3

Jiang, X., Q. Ji, A. Chang, and K. N. Leung. Mini RF-driven ion source for focused ion beam system. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/802041.

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4

Pellerin, J. G., D. Griffis, and P. E. Russell. Development of a focused ion beam micromachining system. Office of Scientific and Technical Information (OSTI), 1988. http://dx.doi.org/10.2172/476649.

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5

Tegtmeier, Eric, Mary Hill, Daniel Rios, and Juan Duque. Focused Ion Beam analysis of non radioactive samples. Office of Scientific and Technical Information (OSTI), 2021. http://dx.doi.org/10.2172/1766960.

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6

Harmer, M. P. A Focused-Ion Beam (FIB) Nano-Fabrication and Characterization Facility. Defense Technical Information Center, 2002. http://dx.doi.org/10.21236/ada408750.

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7

Mayer, Thomas Michael, David Price Adams, V. Carter Hodges, and Michael J. Vasile. Focused ion beam techniques for fabricating geometrically-complex components and devices. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/918768.

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8

Lamartine, B. C. Liquid metal focused ion beam etch sensitization and related data transmission processes. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/562504.

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9

Ligda, Jonathan, and Mary Galanko. Circuit Editing of Gold Connecting Electrodes using a Focused Ion Beam Microscope. DEVCOM Army Research Laboratory, 2023. http://dx.doi.org/10.21236/ad1211303.

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10

Dolph, Melissa C., and Christopher Santeufemio. Exploring Cryogenic Focused Ion Beam Milling as a Group III-V Device Fabrication Tool. Defense Technical Information Center, 2013. http://dx.doi.org/10.21236/ada597233.

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