Relevant bibliographies by topics / Focused ion beam SEM

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Focused ion beam SEM'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Focused ion beam SEM"

1

Dravid, Vinayak P., Steven Kim, and Luke N. Brewer. "Focused Ion Beam (FIB): More than Just a Fancy Ion Beam Thinner." Microscopy and Microanalysis 6, S2 (2000): 504–5. http://dx.doi.org/10.1017/s1431927600035017.

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The potential utility of FIB for routine (and novel) applications has come to forefront recently due to advances in ion optics which now allow formation of focused ion probe of better than ∼10-20 nm containing current density exceeding several A/cm2, with a liquid metal source (typically Gallium). The small ion probe size, coupled with shallow sputtering depth - yet high sputtering yield of ions, has opened several opportunities in machining, lithography and ion-assisted deposition[ 1-3] These developments, including automation, multi-specimen stages, cross-compatible specimen holders for FIB/
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Grandfield, Kathryn, and Håkan Engqvist. "Focused Ion Beam in the Study of Biomaterials and Biological Matter." Advances in Materials Science and Engineering 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/841961.

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The application of focused ion beam (FIB) techniques in the life sciences has progressed by leaps and bounds over the past decade. A once dedicated ion beam instrument, the focused ion beam today is generally coupled with a plethora of complementary tools such as dual-beam scanning electron microscopy (SEM), environmental SEM, energy dispersive X-ray spectroscopy (EDX), or cryogenic possibilities. All of these additions have contributed to the advancement of focused ion beam use in the study of biomaterials and biological matter. Biomaterials, cells, and their interfaces can be routinely image
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Rossie, B. B., S. D. Anderson, F. A. Stevie, S. R. Brown, and T. L. Shofner. "Focused Ion Beam Induced Copper Artifact Dose Study." Microscopy and Microanalysis 6, S2 (2000): 534–35. http://dx.doi.org/10.1017/s1431927600035169.

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Reduced feature dimensions in microelectronic devices has led to a growing reliance on the focused ion beam (FIB) for scanning electron microscopy (SEM) and transmission electron microscopy (TEM) specimen preparation. The introduction of copper for use in electrical interconnects will increase this reliance. Copper, much more so than aluminum, tends to smear when conventional polishing techniques are employed, rendering mechanical polishing unsuitable for quality specimen preparation.The sputtering characteristics of copper differ greatly from the aluminum based materials currently in use. Cop
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Giannuzzi, Lucille A. "FIB/SEM Dual Beam Instrumentation: Slicing, Dicing, Imaging, and More." Microscopy and Microanalysis 7, S2 (2001): 796–97. http://dx.doi.org/10.1017/s1431927600030051.

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In a focused ion beam (FIB) instrument, ions (typically Ga+) obtained from a liquid metal ion source are accelerated down a column at energies up to ∽ 50 keV. The beam of ions is focused by electrostatic and octopole lens systems and the ion dose (and beam diameter) is controlled using real and/or virtual apertures. Beam sizes in FIB instruments on the order of 5-7 nm may be achieved.The versatility of the FIB instrument enables large regions of material (e.g., 500 μm3) to be removed at high beam currents in just a couple of minutes. Lower beam currents (i.e., beam diameters) are usually used
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Giannuzzi, L. A., J. L. Drownt, S. R. Brown, R. B. Irwin, and F. A. Stevie. "Focused Ion Beam Milling for Site Specific Scanning and Transmission Electron Microscopy Specimen Preparation." Microscopy and Microanalysis 3, S2 (1997): 347–48. http://dx.doi.org/10.1017/s143192760000862x.

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It has been shown that a focused ion beam (FIB) instrument may be used to prepare site specific cross-sectioned specimens to within < 0.1 μm for both scanning and transmission electron microscopy (SEM and TEM, respectively). FIB specimen preparation has been used almost exclusively in the microelectronics industry. Recently, FIB specimen preparation has been utilized for other materials systems and applications.A cross-sectioned SEM specimen is produced by sputtering away a trench of material from near the region of interest. Large amounts of material are sputtered using large ion beam diam
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Dravid, Vinayak P. "Focused Ion Beam (FIB): More than Just a Fancy Ion Beam Thinner." Microscopy and Microanalysis 7, S2 (2001): 926–27. http://dx.doi.org/10.1017/s1431927600030701.

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The potential utility of FIB for routine (and novel) applications has come to forefront recently due to advances in ion optics which now allow formation of focused ion probe of better than ∼10-20 nm containing current density exceeding several A/cm2, with a liquid metal source (typically Gallium). The small ion probe size, coupled with shallow sputtering depth - yet high sputtering yield of ions, has opened several opportunities in machining, lithography and ion-assisted deposition.[1-3] These developments, including automation, multi-specimen stages, cross-compatible specimen holders for FIB/
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Young, R. J. "Automation of Focused Ion Beam (FIB) Sample Preparation." Microscopy and Microanalysis 6, S2 (2000): 512–13. http://dx.doi.org/10.1017/s1431927600035054.

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The use of focused ion beam (FIB) systems is well established as a sample preparation and imaging tool in a wide range of applications, most notably, in the semiconductor and data storage industries, but also within material and biological sciences (Figs. 1-3). The real benefit of the FIB is that the same ion beam that is used for material removal and deposition is also used for imaging the sample, which results in highly precise and localized sample preparation. In addition, the FIB can be used to prepare samples through multiple layers with different material properties, and allows the rest
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Principe, E. L., Cheryl Hartfield, Rocky Kruger, et al. "Atomic Layer Deposition and Vapor Deposited SAMS in a CrossBeam FIB-SEM Platform: A Path To Advanced Materials Synthesis." Microscopy Today 17, no. 2 (2009): 18–25. http://dx.doi.org/10.1017/s1551929500054444.

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Nanopatterning refers to the fabrication of nanometer-scale structures, meaning patterns with at least one lateral dimension between the size of an individual atom and approximately 100 nm. Direct Write or Maskless Lithography as discussed in this article refers to the use of a focused beam, either an ion beam or an electron beam, to create a patterned image directly into (etch), or on top of (deposition), the target material. Both electron beams and ion beams can be used together with gas injection technology to deposit three dimensional structures on the nanometer scale through the process o
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Lin, Jui-Ching, William Heeschen, John Reffner, and John Hook. "Three-Dimensional Characterization of Pigment Dispersion in Dried Paint Films Using Focused Ion Beam–Scanning Electron Microscopy." Microscopy and Microanalysis 18, no. 2 (2012): 266–71. http://dx.doi.org/10.1017/s143192761101244x.

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AbstractThe combination of integrated focused ion beam–scanning electron microscope (FIB-SEM) serial sectioning and imaging techniques with image analysis provided quantitative characterization of three-dimensional (3D) pigment dispersion in dried paint films. The focused ion beam in a FIB-SEM dual beam system enables great control in slicing paints, and the sectioning process can be synchronized with SEM imaging providing high quality serial cross-section images for 3D reconstruction. Application of Euclidean distance map and ultimate eroded points image analysis methods can provide quantitat
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Yao, Bao Yin, Hu Luo, Li Shuang Feng, Zhen Zhou, Rong Ming Wang, and Yuan Yuan Chi. "Fabrication of Nano-Grating by Focused Ion Beam / Scanning Electron Microscopy Dual-Beam System." Key Engineering Materials 483 (June 2011): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.483.66.

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The uniform, well designed nano-gratings have been successfully fabricated by using a dual beam focused ion beam (FIB)/scanning electron microscopy (SEM) system on the silicon substrates coated with 15 nm thick Au layer. The nano-gratings were designed with period of 840 nm, groove of 425 nm and beam of 415 nm. By adjusting the FIB parameters of milling like beam current, dwell time and scanning model, the fabricated nano-gratings were uniform in width and the side wall had good verticality. The currently fabricated nano-gratings using focused ion beam can be adjusted to serve as sub-wavelengt
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Dissertations / Theses on the topic "Focused ion beam SEM"

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Yuan, Hui. "3D morphological and crystallographic analysis of materials with a Focused Ion Beam (FIB)." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0134/document.

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L’objectif principal de ce travail est d’optimise la tomographie par coupe sériée dans un microscope ‘FIB’, en utilisant soit l’imagerie électronique du microscope à balayage (tomographie FIB-MEB), soit la diffraction des électrons rétrodiffusés (tomographie dite EBSD 3D). Dans les 2 cas, des couches successives de l’objet d’étude sont abrasées à l’aide du faisceau ionique, et les images MEB ou EBSD ainsi acquises séquentiellement sont utilisées pour reconstruire le volume du matériau. A cause de différentes sources de perturbation incontrôlées, des dérives sont généralement présentes durant l
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Blom, Tobias. "Fabrication and Applications of a Focused Ion Beam Based Nanocontact Platform for Electrical Characterization of Molecules and Particles." Doctoral thesis, Uppsala universitet, Experimentell fysik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-122940.

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The development of new materials with novel properties plays an important role in improving our lives and welfare. Research in Nanotechnology can provide e.g. cheaper and smarter materials in applications such as energy storage and sensors. In order for this development to proceed, we need to be able to characterize the material properties at the nano-, and even the atomic scale. The ultimate goal is to be able to tailor them according to our needs. One of the great challenges concerning the characterization of nano-sized objects is how to achieve the physical contact to them. This thesis is f
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Rivera, Felipe. "Electron Microscopy Characterization of Vanadium Dioxide Thin Films and Nanoparticles." BYU ScholarsArchive, 2012. https://scholarsarchive.byu.edu/etd/2975.

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Vanadium dioxide (VO_2) is a material of particular interest due to its exhibited metal to insulator phase transition at 68°C that is accompanied by an abrupt and significant change in its electronic and optical properties. Since this material can exhibit a reversible drop in resistivity of up to five orders of magnitude and a reversible drop in infrared optical transmission of up to 80%, this material holds promise in several technological applications. Solid phase crystallization of VO_2 thin films was obtained by a post-deposition annealing process of a VO_{x,x approx 2} amorphous film sput
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Cadiou, François. "Étude de l'impact de la microstructure sur les propriétés effectives électriques des batteries lithium-ion." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI108.

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Cette étude porte sur la compréhension du lien existant entre l’architecture microstructurelle et les propriétés effectives de conductivité dans les électrodes des batteries Li-ion. Les batteries Li-ion sont très intéressantes pour des domaines tels que le transport électrique. En effet, elles présentent une grande densité d’énergie et de puissance ce qui en fait de bons substituts pour les moteurs thermiques. Cependant, même si elles sont maintenant assez largement utilisées dans beaucoup de domaines, il y a toujours besoin d’en optimiser les performances. Ceci passe par une meilleure compréh
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Cox, Jonathan Wesley. "Electronic and Optical Properties of Defects at Metal-ZnO Nanowire Contacts." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492199033371717.

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Švajdová, Anna. "Design elektronového mikroskopu." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2017. http://www.nusl.cz/ntk/nusl-319480.

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The theme of this diploma thesis is the design of a scanning electron microscope with a focused ion beam. Specifically, the thesis is focused on the design of the microscope covers and the adjacent workplace of the operator for Tescan Orsay Holding a.s.. Design is solved as the first proposal aimed at future innovation of the design of the entire product line.
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Latif, Adnan. "Nanofabrication using focused ion beam." Thesis, University of Cambridge, 2000. https://www.repository.cam.ac.uk/handle/1810/34605.

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Focused ion beam (FIB) technique uses a focused beam of ions to scan the surface of aspecimen, analogous to the way scanning electron microscope (SEM) utilizes electrons. Recent developments in the FIB technology have led to beam spot size below 10 nm,which makes FIB suitable for nanofabrication. This project investigated thenanofabrication aspect of the FIB technique, with device applications perspective inseveral directions. Project work included construction of an in-situ FIB electricalmeasurement system and development of its applications, direct measurements ofnanometer scale FIB cuts and
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Naik, Jay Prakash. "Nanowires fabricated by Focused Ion Beam." Thesis, University of Birmingham, 2013. http://etheses.bham.ac.uk//id/eprint/4638/.

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This thesis reports research on nanowires fabricated by FIB lithography with experiments to understand their mechanical, electrical and hydrodynamic properties. Au nanowires fabricated on Si\(_3\)N\(_4\) membranes with width below 50nm exhibit liquid like instabilities and below \(\sim\)20nm the instabilities grow destroying the nanowires due to the Rayleigh- Plateau instability. Stability is better in the case for Si substrates than for the insulators Si0\(_2\) and Si\(_3\)N\(_4\). A series of 4-terminal resistance measurements were carried out on a "platinum" nanowire grown by FIB-induced de
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Wong, Ka Chun. "Focused Ion Beam Nanomachining of Thermoplastic Polymers." Thesis, North Carolina State University, 2013. http://pqdtopen.proquest.com/#viewpdf?dispub=3538536.

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<p> Commercially available Ga<sup>+</sup> focused ion beam (FIB) instruments with nanometer size probe allows for in situ materials removal (sputtering) and addition (deposition) on a wide range of material. These spatially precise processes have enabled a wide range of nanofacbrication operations (e.g. specimen preparation for analysis by scanning electron microscope, transmission electron microscope, and secondary ion mass spectrometer). While there exists an established knowledge of FIB methods for sample preparation of hard materials, but FIB methodology remain underdeveloped for soft mate
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Sabouri, Aydin. "Nanofabrication by means of focused ion beam." Thesis, University of Birmingham, 2015. http://etheses.bham.ac.uk//id/eprint/5987/.

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Focused ion beam (FIB) systems have been used widely in micro/nano technology due to their unique capabilities. In this fabrication technique, ions are accelerated towards the sample surfaces and substrate atoms are removed. Despite the ubiquity of this method, several problems remain unsolved and are not fully understood. In this thesis, the effects of FIB machining and its halo effects on substrate are investigated. A novel detector which can perform measurements of the current density profile of the generated beam, was successfully demonstrated. The effect of ion solid interactions for 30ke
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Books on the topic "Focused ion beam SEM"

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Yao, Nan, ed. Focused Ion Beam Systems. Cambridge University Press, 2007. http://dx.doi.org/10.1017/cbo9780511600302.

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Bachmann, Maja D. Manipulating Anisotropic Transport and Superconductivity by Focused Ion Beam Microstructuring. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51362-7.

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Córdoba Castillo, Rosa. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-02081-5.

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1934-, Swanson Lynwood, and Utlaut Mark William 1949-, eds. High resolution focused ion beams: FIB and its applications : the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. Kluwer Academic/Plenum Publishers, 2003.

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Orloff, Jon. High Resolution Focused Ion Beams: FIB and its Applications: The Physics of Liquid Metal Ion Sources and Ion Optics and Their Application to Focused Ion Beam Technology. Springer US, 2003.

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Orloff, Jon. High resolution focused ion beams: FIB and its applications ; the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. Kluwer Academic/Plenum Publishers, 2003.

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Foster, C. P. J. A comparison of electro discharge machining, laser & focused ion beam micromachining technologies. TWI, 1998.

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Fernandez-Pacheco, Amalio. Studies of Nanoconstrictions, Nanowires and Fe₃O₄ Thin Films: Electrical Conduction and Magnetic Properties. Fabrication by Focused Electron/Ion Beam. Springer-Verlag Berlin Heidelberg, 2011.

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Japan-U.S. Seminar on Focused Ion Beam Technology and Applications (1987 Osaka, Japan and Mie-ken, Japan). Proceedings of the Japan-U.S. Seminar on Focused Ion Beam Technology and Applications: 15-19 November 1987, Senri Hankyu Hotel, Osaka, and 20 November 1987, Shima Kanko Hotel, Mie Prefect, Japan. Edited by Harriott Lloyd R, Nihon Gakujutsu Shinkōkai, National Science Foundation (U.S.), and American Vacuum Society. Published for the American Vacuum Society by the American Institute of Physics, 1988.

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Ranzi, Gianluca, ed. Time-dependent behaviour and design of composite steel-concrete structures. International Association for Bridge and Structural Engineering (IABSE), 2021. http://dx.doi.org/10.2749/sed018.

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&lt;p&gt;Steel-concrete composite structures are widely used throughout the world for buildings and bridges. A distinguishing feature of this form of construction is the combination of concrete and steel components to achieve enhanced structural performance. &lt;p&gt;The time-dependent response of concrete and its infl uence on the service behaviour and design of composite structures are the main focus of this SED. For the fi rst time, a publication combines a state-of-the-art review of the research with the available design specifi cations of Europe, Australia and New Zealand, and USA. This p
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Book chapters on the topic "Focused ion beam SEM"

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Young, Richard J., and Mary V. Moore. "Dual-Beam (FIB-SEM) Systems." In Introduction to Focused Ion Beams. Springer US, 2005. http://dx.doi.org/10.1007/0-387-23313-x_12.

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Goldstein, Joseph I., Dale E. Newbury, Joseph R. Michael, Nicholas W. M. Ritchie, John Henry J. Scott, and David C. Joy. "Focused Ion Beam Applications in the SEM Laboratory." In Scanning Electron Microscopy and X-Ray Microanalysis. Springer New York, 2017. http://dx.doi.org/10.1007/978-1-4939-6676-9_30.

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Takahashi-Nakazato, Ai, Laxmi Kumar Parajuli, Hirohide Iwasaki, Shinji Tanaka, and Shigeo Okabe. "Ultrastructural Observation of Glutamatergic Synapses by Focused Ion Beam Scanning Electron Microscopy (FIB/SEM)." In Methods in Molecular Biology. Springer New York, 2019. http://dx.doi.org/10.1007/978-1-4939-9077-1_2.

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Drobne, Damjana. "3D Imaging of Cells and Tissues by Focused Ion Beam/Scanning Electron Microscopy (FIB/SEM)." In Nanoimaging. Humana Press, 2012. http://dx.doi.org/10.1007/978-1-62703-137-0_16.

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Xu, Zongwei, Fengzhou Fang, and Guosong Zeng. "Focused Ion Beam Nanofabrication Technology." In Handbook of Manufacturing Engineering and Technology. Springer London, 2013. http://dx.doi.org/10.1007/978-1-4471-4976-7_66-2.

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Gierak, Jacques. "Focused Ion Beam Direct-Writing." In Lithography. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch4.

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Bachmann, Maja D. "Focused Ion Beam Micro-machining." In Manipulating Anisotropic Transport and Superconductivity by Focused Ion Beam Microstructuring. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51362-7_2.

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Xu, Zong Wei, Fengzhou Fang, and Guosong Zeng. "Focused Ion Beam Nanofabrication Technology." In Handbook of Manufacturing Engineering and Technology. Springer London, 2014. http://dx.doi.org/10.1007/978-1-4471-4670-4_66.

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Melngailis, J., A. D. Dubner, J. S. Ro, G. M. Shedd, H. Lezec, and C. V. Thompson. "Focused Ion Beam Induced Deposition." In Emerging Technologies for In Situ Processing. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-1409-4_17.

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Stevie, F. A., L. A. Giannuzzi, and B. I. Prenitzer. "The Focused Ion Beam Instrument." In Introduction to Focused Ion Beams. Springer US, 2005. http://dx.doi.org/10.1007/0-387-23313-x_1.

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Conference papers on the topic "Focused ion beam SEM"

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Bender, H. J., and R. A. Donaton. "Focused Ion Beam Analysis of Low-K Dielectrics." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0397.

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Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate c
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Paśniewski, Maciej. "Focused Ion Beam – Sample Interactions in Polyolefins: a Multi-Ion FIB-SEM and ToF-SIMS Study." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.275.

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Herlinger, L. R., S. Chevacharoenkul, and D. C. Erwin. "TEM Sample Preparation Using A Focused Ion Beam and A Probe Manipulator." In ISTFA 1996. ASM International, 1996. http://dx.doi.org/10.31399/asm.cp.istfa1996p0199.

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Abstract Cross-sectioning is a necessary technique for the failure analysis of integrated circuits. Historically, the majority of samples have been prepared for scanning electron microscope (SEM) analysis. Today's smaller geometry devices, however, increasingly require the improved spatial resolution afforded by the transmission electron microscope (TEM), both in imaging analysis and in elemental analysis. Specific-area cross-section TEM (SAXTEM) analysis allows the failure analyst to identify defects that may go undiscovered in the SEM. A procedure is described for a timely preparation of SAX
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Altmann, Frank, Jan Schischka, Vinh Van Ngo, Stacey Stone, Laurens F. Tz Kwakman, and Ralf Lehmann. "Combined Electron Beam Induced Current Imaging (EBIC) and Focused Ion Beam (FIB) Techniques for Thin Film Solar Cell Characterization." In ISTFA 2010. ASM International, 2010. http://dx.doi.org/10.31399/asm.cp.istfa2010p0151.

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Abstract A novel analytical method applying combined electron beam induced current (EBIC) imaging based on scanning electron microscopy (SEM) and focused ion beam (FIB) cross sectioning in a SEM/FIB dualbeam system is presented. The method is demonstrated in several case studies for process characterization and failure analysis of thin film technology based Solar cells, including Silicon (CSG), Cadmium Telluride (CdTe) and Copper Indium Selenide (CIS) absorbers. While existing techniques such as electro-, photoluminescence spectroscopy and lock-in thermography are able to locate the larger, el
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Alani, R., R. J. Mitro, and W. Hauffe. "Recent Advances in Broad Ion Beam Based Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors." In ISTFA 1999. ASM International, 1999. http://dx.doi.org/10.31399/asm.cp.istfa1999p0439.

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Abstract The semiconductor industry routinely prepares crosssectional SEM specimens using several traditional techniques. Included in these are cleaving, mechanical polishing, wet chemical etching and focused ion beam (FIB) milling. This presentation deals with a new alternate method for preparation of SEM semiconductor specimens based upon a dedicated broad ion beam instrument. Offered initially as an alternative to wet chemical etching, the instrument was designed to etch and coat SEM and metallographic specimens in one vacuum chamber using inert gas (Ar) ion beams. The system has recently u
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Low, G. R., P. K. Tan, T. H. Ng, et al. "Top-Down Delayering with Planar Slicing Focus Ion Beam (TD-PS-XFIB)." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0569.

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Abstract Top-down, layer-by-layer de-layering inspection with a mechanical polisher and serial cross-sectional Focused Ion Beam (XFIB) slicing are two common approaches for physical failure analysis (PFA). This paper uses XFIB to perform top-down, layer-by-layer de-layering followed by Scanning Electron Microscope (SEM) inspection. The advantage of the FIB-SEM de-layering technique over mechanical de-layering is better control of the de-layering process. Combining the precise milling capability of the FIB with the real-time imaging capability of the SEM enables the operator to observe the de-l
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Wang, C. H., S. P. Chang, C. F. Chang, and J. Y. Chiou. "Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging." In ISTFA 2007. ASM International, 2007. http://dx.doi.org/10.31399/asm.cp.istfa2007p0168.

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Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special
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Senowitz, Corey, Hieu Nguyen, Ruby Vollrath, et al. "Application of Passive Voltage Contrast (PVC) to Dual Beam Focused Ion Beam (FIB) Based Sample Preparation for the Scanning/Transmission Electron Microscope (S/TEM)." In ISTFA 2014. ASM International, 2014. http://dx.doi.org/10.31399/asm.cp.istfa2014p0474.

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Abstract The modern scanning transmission electron microscope (S/TEM) has become a key technology and is heavily utilized in advanced failure analysis (FA) labs. It is well equipped to analyze semiconductor device failures, even for the latest process technology nodes (20nm or less). However, the typical sample preparation process flow utilizes a dual beam focused ion beam (FIB) microscope for sample preparation, with the final sample end-pointing monitored using the scanning electron microscope (SEM) column. At the latest technology nodes, defect sizes can be on the order of the resolution li
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Ray, Valery, Ali Hadjikhani, Joseph Favata, Seyedeh Ahmadi, and Sina Shahbazmohamadi. "Further Inquiry into Xe Primary Ion Species for Circuit Edit Application." In ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0251.

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Abstract Widespread adoption and significant developments in Focused Ion Beam technology has made FIB/SEM instrumentation a commonplace sample preparation tool. Fundamental limitations inherent to Ga ion species complicate usage of Ga+ FIB instruments for the modification of semiconductor devices on advanced technology nodes. Said limitations are fueling interest in exploring alternative primary species and ion beam technologies for circuit edit applications. Exploratory tests of etching typical semiconductor materials with Xe ion beams generated from two plasma ion sources confirmed advantage
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Herschbein, Steven B., Hyoung H. Kang, Harvey E. Berman, Carmelo F. Scrudato, Aaron D. Shore, and Bing Dai. "Semi-Automated Full Wafer In-Line SRAM Failure Analysis by Dual Beam Focused Ion Beam (FIB)." In ISTFA 2010. ASM International, 2010. http://dx.doi.org/10.31399/asm.cp.istfa2010p0113.

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Abstract The presence of a full wafer dual-beam FIB on the process floor gave rise to an environment in which formerly segregated off-line lab and FAB tasks could be linked. One such idea involved a methodology for semi-automated defect targeting based on the spatial predictions of static random access memory (SRAM) electrical testing. The embedded memory blocks on some processors are fully configured and probe pad testable as early as the forth metal level. Using a unique navigation technique that combines electrically sorted SRAM bit map data with CAD coordinate information and stage driven
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Reports on the topic "Focused ion beam SEM"

1

Melngailis, John. Focused Ion Beam Implantation. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada249662.

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2

Jiang, X., Q. Ji, A. Chang, and K. N. Leung. Mini RF-driven ion source for focused ion beam system. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/802041.

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3

Pellerin, J. G., D. Griffis, and P. E. Russell. Development of a focused ion beam micromachining system. Office of Scientific and Technical Information (OSTI), 1988. http://dx.doi.org/10.2172/476649.

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4

Tegtmeier, Eric, Mary Hill, Daniel Rios, and Juan Duque. Focused Ion Beam analysis of non radioactive samples. Office of Scientific and Technical Information (OSTI), 2021. http://dx.doi.org/10.2172/1766960.

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5

Harmer, M. P. A Focused-Ion Beam (FIB) Nano-Fabrication and Characterization Facility. Defense Technical Information Center, 2002. http://dx.doi.org/10.21236/ada408750.

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Mayer, Thomas Michael, David Price Adams, V. Carter Hodges, and Michael J. Vasile. Focused ion beam techniques for fabricating geometrically-complex components and devices. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/918768.

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Lamartine, B. C. Liquid metal focused ion beam etch sensitization and related data transmission processes. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/562504.

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Dolph, Melissa C., and Christopher Santeufemio. Exploring Cryogenic Focused Ion Beam Milling as a Group III-V Device Fabrication Tool. Defense Technical Information Center, 2013. http://dx.doi.org/10.21236/ada597233.

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9

Miller, J. D., R. F. Schneider, D. J. Weidman, H. S. Uhm, and K. T. Nguyen. Plasma Wakefield Effects On High-Current Relativistic Electron Beam Transport In The Ion-Focused Regime. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada338876.

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