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Dissertations / Theses on the topic 'Frontal semiconductor'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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1

Кушнір, Б. В., та І. Г. Ткачук. "Гетеропереходи на основі шаруватих кристалів FeIn[2]Se[4] та In[4]Se[3]". Thesis, Сумський державний університет, 2017. http://essuir.sumdu.edu.ua/handle/123456789/64729.

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Шаруваті кристали FeIn2Se4 і In4Se3 – перспективні матеріали для створення фоточутливих гетеропереходів на їх основі , які можуть бути як n-, так і p- типу провідності. Ці матеріали з різною симетрією і періодами кристалічної градки дозволяють методом Ван-дерваальсового контакту поверхонь створювати якісні гетеропереходи. Методом механічного контакту був сформований новий гетероперехід p-FeIn2Se4 – n-In4Se3. Монокристали In4Se3 вирощувалися методом Чохральського і володіли яскраво вираженою шаруватою структурою. В якості фронтального напівпровідника гетеропереходу були обрані кристали FeIn2Se4
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2

Amann, Andreas. "Nonlinear and chaotic front dynamics in semiconductor superlattices." [S.l.] : [s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=970075081.

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3

Modestov, Mikhail. "Fronts and instabilities in laser ablation, organic semiconductors and quantum media." Doctoral thesis, Umeå universitet, Institutionen för fysik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-49728.

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The concept of a front plays a decisive role in various elds in physics and beyond. In the present thesis we study key aspects of front dynamics and stability in the context of laser plasmas, organic semiconductors and quantum media. In laser plasmas, we investigate the hydrodynamic instabilities developing at the fronts of laser deagration (ablation). Using direct numerical simulations, we nd noticeable velocity increase of the Rayleigh-Taylor bubble at a deagration front in comparison with that arising at an inert interface. We study the Darrieus-Landau instability of laser deagration accoun
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4

Tsui, Hau Yiu. "A 5 GHz integrated low-power CMOS RF front-end IC design /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202004%20TSUI.

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5

Cha, Jeongwon. "A CMOS radio-frequency front-end for multi-standard wireless communications." Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37250.

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The explosive growth of wireless communication market has led the development of low-cost, highly-integrated wireless communication systems. Even though most blocks in the front-end have successfully been integrated by using the CMOS technology, it is still a formidable challenge to integrate the entire front-end. Thus, the objective of this research is to demonstrate the feasibility of the integrated front-end by using improved circuit techniques as well as the improved process technologies. This dissertation proposes an improved control scheme to enhance the high-power handling capability of
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6

Perumana, Bevin George. "Low-power CMOS front-ends for wireless personal area networks." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/26712.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanouil. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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7

Chen, Chih-Hung. "CMOS RF front-end design of a very narrowband transceiver with 0.18[micrometers]." To access this resource online via ProQuest Dissertations and Theses @ UTEP, 2008. http://0-proquest.umi.com.lib.utep.edu/login?COPT=REJTPTU0YmImSU5UPTAmVkVSPTI=&clientId=2515.

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8

Kim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.

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With the explosive growth of the wireless market, the demand for low-cost and highly-integrated radio frequency (RF) transceiver has been increased. Keeping up with this trend, complimentary metal-oxide-semiconductor (CMOS) has been spotlighted by virtue of its superior characteristics. However, there are challenges in achieving this goal, especially designing the transmitter portion. The objective of this research is to demonstrate the feasibility of fully integrated CMOS transmitter module which includes power amplifier (PA) and transmit/receive (T/R) switch by compensating for the intrinsic
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9

Poh, Chung Hang. "SiGe HBT BiCMOS RF front-ends for radar systems." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/45874.

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The objective of this research is to explore the possibilities of developing transmit/receive (T/R) modules using silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology to integrate with organic liquid crystal polymer (LCP) packages for the next-generation phased-array radar system. The T/R module requirements are low power, compact, lightweight, low cost, high performance, and high reliability. All these requirements have provided a very strong motivation for developing fully monolithic T/R modules. SiGe HBT BiCMOS technology is an excellent candidate to integrate
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10

Park, Jinsung. "A highly linear and low flicker-noise CMOS direct conversion receiver front-end for multiband applications." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-07092007-054701/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Dr. Chang-Ho Lee, Committee Member ; Dr . Kevin T Kornegay, Committee Member ; Dr. Emmanouil M Tentzeris, Committee Member ; Dr. Joy Laskar, Committee Chair ; Dr. Oliver Brand, Committee Member.
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11

Hsin, Shih-Chieh. "Design and analysis of key components for manufacturable and low-power CMOS millimeter-wave receiver front end." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45877.

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The objective of this dissertation is to develop key components of a CMOS heterodyne millimeter-wave receiver front end. Robust designs are necessary to overcome PVT variations as well as modeling inaccuracies, while with minimum power consumption overhead to facilitate low-power radio for portable applications. Heterodyne receiver topology is adopted because of its robust performances at millimeter-wave frequencies. Device models for both passive and active devices are developed and used in the circuit designs in this dissertation. Two low-noise amplifiers (LNAs) are developed in this dissert
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12

Park, Yunseo. "Direct Conversion RF Front-End Implementation for Ultra-Wideband (UWB) and GSM/WCDMA Dual-Band Applications in Silicon-Based Technologies." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7563.

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This dissertation focuses on wideband circuit design and implementation issues up to 10GHz based on the direct conversion architecture in the CMOS and SiGe BiCMOS technologies. The dissertation consists of two parts: One, implementation of a RF front-end receiver for an ultra-wideband system and, two, implementation of a local oscillation (LO) signal for a GSM/WCDMA multiband application. For emerging ultra-wideband (UWB) applications, the key active components in the RF front-end receiver were designed and implemented in 0.18um SiGe BiCMOS process. The design of LNA, which is the critical cir
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13

Simon, Gaël. "Introduction des technologies de multiplexage en longueur d'onde dense dans les futures générations de réseaux d'accès optique." Electronic Thesis or Diss., Paris, ENST, 2016. http://www.theses.fr/2016ENST0076.

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Initialement poussées par le marché résidentiel, les évolutions du réseau d’accès optique sont aujourd’hui également stimulées par l’expansion du réseau mobile. Comme le montre le premier chapitre de ce document, l’introduction d’un multiplexage en longueur d’onde dense constitue l’une des solutions privilégiées pour permettre la montée en débit dans les réseaux d’accès optique. Dans cette thèse, l’impact de l’introduction du multiplexage en longueur d’onde dense est étudié sous trois axes :• Une prochaine étape de l’évolution des technologies pour les réseaux d’accès passerait par une hybrida
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14

Simon, Gaël. "Introduction des technologies de multiplexage en longueur d'onde dense dans les futures générations de réseaux d'accès optique." Thesis, Paris, ENST, 2016. http://www.theses.fr/2016ENST0076/document.

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Initialement poussées par le marché résidentiel, les évolutions du réseau d’accès optique sont aujourd’hui également stimulées par l’expansion du réseau mobile. Comme le montre le premier chapitre de ce document, l’introduction d’un multiplexage en longueur d’onde dense constitue l’une des solutions privilégiées pour permettre la montée en débit dans les réseaux d’accès optique. Dans cette thèse, l’impact de l’introduction du multiplexage en longueur d’onde dense est étudié sous trois axes :• Une prochaine étape de l’évolution des technologies pour les réseaux d’accès passerait par une hybrida
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15

CHEN-POHAN and 陳柏翰. "Advantages of Intelligent Logistics in Semiconductors Industry - A Case Study of the Front-end Semiconductor Manufacturing." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/s8g92x.

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碩士<br>國立成功大學<br>交通管理科學系<br>107<br>Looking ahead the global semiconductor factory to focus on the Microelectronics process, the key processes and factory integration optimization, to provide semiconductor factory customers in the process environment. At the ever-changing technology, continuous improvement of the industry and the support of policies, China has actively developed the localization of the semiconductor industry, further driving the rapid growth of IC output value and gradually forming a competitive situation with Taiwan. Therefore, prospect to the future, in order to improve the le
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16

Amann, Andreas [Verfasser]. "Nonlinear and chaotic front dynamics in semiconductor superlattices / vorgelegt von Andreas Amann." 2004. http://d-nb.info/970075081/34.

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17

Chia, Shih-Wei, and 賈世瑋. "A STUDY OF KEY SUCCESS FACTORS OF SEMICONDUCTOR FRONT END PROCESS EQUIPMENT." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/06297369473573197553.

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碩士<br>元智大學<br>管理研究所<br>98<br>In the market of high-tech electronics industry, consumer electronics market is characterized of short life cycle, which has already generated great revenues; and semiconductor IC (integrated circuit) plays the key role in the vital consumer electronics industry. As the process technology continues updating with evolution, in Taiwan&apos;&apos;s semiconductor industry, the advanced manufacturing process has moved to 32 or 28-nanometer, and even began to research on 20-nanometer now, represented by the leading wafer foundry TSMC (Taiwan Semiconductor Manufacturing C
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18

"A 1 V 1.575 GHz CMOS integrated receiver front-end." 2004. http://library.cuhk.edu.hk/record=b6073753.

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Cheng Wang Chi.<br>"October 2004."<br>Thesis (Ph.D.)--Chinese University of Hong Kong, 2004.<br>Includes bibliographical references (p. 135-139)<br>Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web.<br>Mode of access: World Wide Web.<br>Abstracts in English and Chinese.
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19

"CMOS ultra-wideband receiver front-end for multi-band OFDM systems." Thesis, 2008. http://library.cuhk.edu.hk/record=b6074550.

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One of the key building blocks in a direct-conversion receiver is the low noise amplifier (LNA), which needs to provide a sufficient gain with a low noise figure for the RF front-end. However, the wideband nature of the receiver imposes harsh requirements on the LNA. It is difficult to achieve desired performance goals over the wide frequency range without excessive power consumption. To deal with this problem, this thesis proposes a novel band-selective UWB LNA. Utilizing the frequency hopping property of the MB-OFDM system, the proposed method switches the operating frequency of the LNA in r
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20

"CMOS power amplifier and transmitter front-end design in wireless communication." 2009. http://library.cuhk.edu.hk/record=b5894046.

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Ng, Yuen Sum.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2009.<br>Includes bibliographical references.<br>Abstract also in Chinese.<br>Chapter 1. --- INTRODUCTION --- p.11<br>Chapter 1.1 --- Motivation --- p.11<br>Chapter 1.2 --- Specifications --- p.12<br>Chapter 1.3 --- Organization of the Thesis --- p.16<br>Chapter 1.4 --- References --- p.16<br>Chapter 2. --- BASIC THEORY OF POWER AMPLIFIER AND TRANSMITTER FRONT-END --- p.18<br>Chapter 2.1 --- Classification of Power Amplifier --- p.18<br>Chapter 2.1.1 --- Class A --- p.20<br>Chapter 2.1.2 --- Class B --- p.21<br>Chapte
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