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Dissertations / Theses on the topic '(Ga,Mn)As:Bi'

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Published: 28 May 2022

Last updated: 31 July 2025

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1

Yastrubchak, O., J. Sadowski, T. Andrearczyk, et al. "Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35332.

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The photoreflectance (PR) spectroscopy was applied to study the band-structure in GaAs:Bi, (Ga,Mn)As and (Ga,Mn)As:Bi layers with the 4% of Mn and 1 % of Bi content and, as a reference, undoped GaAs layer. All films were grown by low temperature (LT) MBE on semi-insulating (001) GaAs substrates. Photoreflec-tance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the films were characterized with a superconducting quantum in-terference device (SQUID) magnetometer. Our findings were interpreted in terms of the model,

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2

Sperl, Matthias. "Magnetische Eigenschaften von (Ga, Mn) As-Schichten und Fe- (Ga, Mn) As-Hybridstrukturen." Berlin mbv, Mensch-und-Buch-Verl, 2009. http://d-nb.info/995879931/04.

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3

Feuchtwanger, Jorge. "Energy absorption in Ni-Mn-Ga/ polymer composites." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/35311.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Includes bibliographical references (p. 139-143).<br>In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic martensites have shown up to 10% strain when subjected to a magnetic

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4

Rana, Uzma Bhatti. "Magneto-transport studies of (Ga,Mn) As devices." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611132.

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5

Kirby, Brian J. "Annealing-dependent phenomena in Ga₁[-x]Mn[x]As." Diss., Columbia, Mo. : University of Missouri-Columbia, 2004. http://hdl.handle.net/10355/4091.

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Thesis (Ph. D.)--University of Missouri-Columbia, 2004.<br>Bracketed information should be subscripted. The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (June 29, 2006) Vita. Includes bibliographical references.

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6

Förster, Anett. "Epitaktische Ni-Mn-Ga-Co-Schichten für magnetokalorische Anwendung." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-231646.

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Weltweit wird ein großer Teil der Energie für die Kühlung unterschiedlichster Arten verwendet und der Bedarf steigt weiterhin an. Herkömmliche Kühlsysteme funktionieren mittels Kompression von Gasen mit sehr niedriger Verdampfungstemperatur. Diese Kältemittel sind entweder giftig, brennbar oder klimaschädlich. Deshalb zielen aktuelle Forschungsschwerpunkte auf alternative und nachhaltige Kühlsysteme. Eine vielversprechende Alternative ist der Einsatz von Festkörpern mit Phasenumwandlungen. Die durch verschiedene (magnetische, elektrische oder elastische) Felder induzierten Phasenübergänge ermö

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7

Marshall, Robin Alexander. "Critical behaviour and quantum properties in (Ga,Mn)As." Thesis, University of Nottingham, 2013. http://eprints.nottingham.ac.uk/13114/.

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pintronics is a rapidly developing field in solid state physics based on the quantum property of spin angular momentum. It has the potential to offer a new generation of electronic devices exploiting spin properties instead of, or in addition to, charge. Such quantum-based devices are expected to demonstrate significant advantages over traditional charge based electronics with a promise of faster data processing speeds and lower power consumption. One of the most widely studied spintronic materials is the dilute magnetic semiconductor gallium manganese arsenide ((Ga,Mn)As). This continues to b

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8

Simon, Jesse Matthew. "Transverse acoustic actuation of Ni-Mn-Ga single crystals." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/38653.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Aeronautics and Astronautics, 2007.<br>Includes bibliographical references (p. 89-92).<br>Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. The first method employs two 33-mode piezoelectric stacks, mounted at 45 deg to the base of a single crystal, to produce a shear stress on the 110 planes. The second method utilizes a single 15-mode piezoelectric stack, nor

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9

Yastrubchak, O., J. Zuk, I. Gluba, J. Z. Domagala, J. Sadowski, and T. Wosinski. "Band-structure analysis in (Ga,Mn)As epitaxial layers." Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20637.

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The ternary III-V semiconductor (Ga,Mn)As has recently drawn a lot of attention as the model diluted ferromagnetic semiconductor, combining semiconducting properties with magnetism. (Ga,Mn)As layers are usually gown by the low-temperature molecular-beam epitaxy (LT-MBE) technique. Below a magnetic transition temperature, TC, substitutional Mn2+ ions are ferromagnetically ordered owing to interaction with spin-polarized holes. However, the character of electronic states near the Fermi energy and the valence-band structure in ferromagnetic (Ga,Mn)As are still a matter of controversy. The phot

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10

Opondo, Noah F. "Transport Studies In The Ferromagnetic Semiconductor (Ga,Mn)As." Miami University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=miami1249688084.

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11

Ye, Shuangli. "Magneto-transport in (Ga, Mn)As-based alloys and hybrids." [S.l. : s.n.], 2005. http://archiv.ub.uni-marburg.de/diss/z2005/0130/.

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12

Wang, Kaiyou. "Magnetotransport and magnetic properties of (Ga,Mn)As thin films." Thesis, University of Nottingham, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.416733.

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13

Quader, Abdul. "MARTENSITIC PHASE TRANSFORMATION IN NI-MN-GA BASED HEUSLER ALLOYS." Miami University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=miami1501240663677547.

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14

Cong, Daoyong. "Crystallographic study on Ni-Mn-Ga ferromagnetic shape memory alloys." Thesis, Metz, 2008. http://www.theses.fr/2008METZ045S/document.

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Les alliages ferromagnétiques à mémoire de forme (FSMAs : Ferromagnetic shape memory alloys) avec des compositions proches de Ni2MnGa ont attiré beaucoup d'attention en raison de leur effet de mémoire de forme gigantesque et de leur réponse rapide et dynamique. Dans ce travail, la structure cristalline, la cristallographie de transformation marténitique, la texture et l’effet de l'addition de Co à l'alliage Ni-Mn-Ga sont examinés systématiquement. Les mesures de diffraction aux neutrons montrent que la structure de Ni53Mn25Ga22 est caractérisée par un réseau tétragonal du groupe I4/mmm de 20K

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15

Mix, Torsten [Verfasser], Ludwig [Gutachter] Schultz, Ludwig [Akademischer Betreuer] Schultz, and Josef [Gutachter] Fidler. "Die L10-Struktur in Mn-Ga- und Mn-Al-Ga-Legierungen: magnetische Eigenschaften und Phasenumwandlungen / Torsten Mix ; Gutachter: Ludwig Schultz, Josef Fidler ; Betreuer: Ludwig Schultz." Dresden : Technische Universität Dresden, 2018. http://d-nb.info/1226813623/34.

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16

Дубина, В. М. "Термодинамічні властивості розплавів потрійних систем Ge(Si)-Mn-AI, Ge(Si)-Ga-Y та Al-Ga-Y". Дис. канд. хім. наук, КНУТШ, 2004.

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17

Schleicher, Benjamin. "Herstellung und multivariable Beeinflussung epitaktischer Ni-Mn-Ga-Co-Schichten auf piezoelektrischen Substraten." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2018. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-232021.

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Um den ständig steigenden Energiebedarf durch Kälteanlagen wie Kühlschränke oder Klimaanlagen zu verringern, sind in den vergangenen Jahren Kühlprozesse in den Mittelpunkt aktueller Forschungen gerückt, die auf Phasenumwandlungen in Festkörpern beruhen. Ein Beispiel dafür sind magnetokalorische Materialien, zu denen auch das in der vorliegenden Arbeit untersuchte Ni-Mn-Ga-Co gehört. In dieser Heusler-Legierung tritt eine Phasenumwandlung erster Ordnung von einer ferromagnetischen, kubischen Hochtemperaturphase (Austenit) in eine tetragonal verzerrte Tieftemperaturphase (Martensit) mit geringer

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18

Brinkmeier, Eva. "TMR- und TAMR-Effekt an (Ga,Mn)As- und GaAs-Tunnelstrukturen." kostenfrei, 2009. http://www.opus-bayern.de/uni-regensburg/volltexte/2009/1359/.

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19

Marcet, Stéphane. "Etude magnéto-optique de (Ga,Mn)N et (Zn,Cr)Te." Phd thesis, Université Joseph Fourier (Grenoble), 2005. http://tel.archives-ouvertes.fr/tel-00081752.

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Ce travail traite de nouveaux semiconducteurs magnétiques dilués (DMS) pouvant avoir une<br />température de Curie supérieure à l'ambiante : (Ga,Mn)N et (Zn,Cr)Te. Des études antérieures<br />ont montré dans ces deux matériaux la même valence d4 pour les ions de transitions et des<br />propriétés ferromagnétiques (parfois paramagnétiques pour (Ga,Mn)N).<br />Une étude magnéto-spectroscopique sur la transition interne d-d du Mn à 1,4 eV dans des<br />couches de (Ga,Mn)N très diluées, moins de 0,1%, a permis de développer un modèle de champ<br />cristallin pour Mn3+ (3d4) en introduisant un eet

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20

Gaitzsch, Uwe. "Struktureinstellung und magnetische Dehnung in polykristallinen magnetischen Ni-Mn-Ga – Formgedächtnislegierungen." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1221130637463-67426.

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Magnetische Formgedächtnsilegierungen haben die besondere Fähigkeit, sich im äußeren Magnetfeld zu verformen. Dies geschieht aufgrund von Zwillingsgrenzenbewegung in der martensitischen Tieftemperaturphase. Da der Effekt bislang an Einkristallen untersucht wurde, ist es das Ziel dieser Arbeit, den Effekt an polykristallinen Proben nachzuweisen. Dafür wurden Proben nach dem Prinzip der gerichteten Erstarrung präpariert. Deren Kristallstruktur wurde durch geeignete Zusammensetzung und Wärmebehandlung einphasig eingestellt. Mechanisches Training und weitere Wärmebehandlungen ermöglichten schließl

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21

Pötschke, Martin. "Herstellung und Charakterisierung von texturiertem Ni-Mn-Ga als magnetisches Formgedächtnismaterial." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-70618.

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Im Legierungssytem Ni-Mn-Ga tritt bei Zusammensetzungen nahe der stöchiometrischen Zusammensetzung Ni2MnGa der magnetische Formgedächtniseffekt auf. Darunter versteht man die Dehnung durch Bewegung von Zwillingsgrenzen im Magnetfeld. Einkristalle aus Ni-Mn-Ga mit einer tetragonalen 5M-Martensitstruktur zeigen magnetisch erzeugbare Dehnungen von bis zu 6 %. Diese großen Dehnungen verbunden mit der schnellen Schaltfrequenz von Magnetfeldern machen den Effekt interessant für technische Anwendungen z. B. als Aktoren. Derartige Einkristalle sind schwierig und teuer herzustellen, weshalb für technis

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22

Chulist, Robert. "Structure and Properties of Twin Boundaries in Ni-Mn-Ga Alloys." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-70998.

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Ni-Mn-Ga alloys close to the stoichiometric composition Ni2MnGa belong to the quite new family of ferromagnetic shape memory alloys. These alloys are characterized by the magnetic field induced strain (MFIS) based on the comparably easy motion of twin boundaries under a magnetic field. They are mostly chosen as a potential candidate for practical application especially promising for actuators and sensors because they are showing the largest MFIS so far. Depending on the chemical composition and heat treatment, at least three martensitic structures can be distinguished in the Ni-Mn-Ga system. H

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23

Inoue, J., S. Nonoyama, and H. Itoh. "Double Resonance Mechanism of Ferromagnetism and Magnetotransport in (Ga-Mn)As." The American Physical Society, 2000. http://hdl.handle.net/2237/7126.

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24

Staneva, Maya. "Theoretical study of dilute magnetic semiconductors : Properties of (Ga,Mn)As." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-126096.

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The dilute magnetic semiconductor (Ga,Mn)As , which is the most interesting and promising material for spintronics applications, has been theoretically studied by using Density Functional Theory. First of all, calculations on GaAs were done and it was found that GaAs is a semiconductor with a direct band gap. The calculated value of the band gap is ~ 0.5eV. Secondly, the material iron was considered and it was confirmed that iron is a ferromagnetic metal with 2.2µB net magnetic moment. Then a magnetic impurity of manganese, Mn was introduced in the nonmagnetic GaAs and it became ferromagnetic

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25

Hussain, Syed Asad. "Domain wall propagation in nanometric layers of (Ga,Mn)(As,P)." Thesis, KTH, Materialvetenskap, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-159500.

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Domain wall dynamics is the one of the most interesting topics in the field of Spintronics because of its potential applications in the development of memory devices. These studies of dynamics are particularly focused on dilute magnetic semiconductors (DMS) or ferromagnetic semiconductors, which are believed to be one of the future materials for Spintronics devices. Despite the fact that the Curie temperature of these DMS is still lower than room temperature the knowledge gained in this study can be applicable to other DMS systems and will unravel new phenomena for the dynamic behavior of doma

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26

Henry, Christopher P. (Christopher Paul) 1974. "Dynamic actuation properties of Ni-Mn-Ga ferromagnetic shape memory alloys." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8442.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.<br>Includes bibliographical references (leaves 198-201).<br>Dynamic magnetic-field-induced strain actuation of up to 3% with a frequency bandwidth of least 500 Hz in Ni48.5Mn29.5Ga21 ferromagnetic shape memory alloys (FMSAs) is achieved. Hardware was designed and constructed to measure frequency bandwidth, magnetic-field-induced strain, stress and magnetization driven from an applied magnetic field. The bandwidth in this investigation was only limited by inductive reactance of the hardware,

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27

Marioni, Miguel Augusto 1971. "Pulsed magnetic field-induced twin boundary motion on Ni-Mn-Ga." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/7965.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.<br>Includes bibliographical references (p. 201-210).<br>The magnetic field-induced strain (ferromagnetic shape memory effect - FSME) in Ni-Mn-Ga was first reported in 1996 by Ullakko et al. Since then, up to 6% FSME in single-crystal tetragonal-Ni-Mn-Ga samples has been observed in static fields, and up to 3% at 500 Hz. The present work demonstrates 6% FSME of a Ni-Mn-Ga single crystal of 5 x 5 x 9.85 mm³ in 200[mu]s is by application of a magnetic field pulse. It proves the feasibility of

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28

Peterson, Bradley William. "Acoustic assisted actuation of Ni-Mn-Ga ferromagnetic shape memory alloys." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/37584.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.<br>Includes bibliographical references (p. 111-115).<br>Ferromagnetic shape memory alloys (FSMA) have been shown in recent work to exhibit large magnetic field induced strains. The material generally requires a large threshold field (of order 3-4 kOe) to initiate the strain. Thus, the power requirements are large and actuators based on these materials could tend to be large. This thesis reports on the effect on the actuation properties of Ni-Mn-Ga single crystals of the use of a sinusoidal

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29

Pereira, Maria João Portela de Sá. "Preparation and study of Ni-Mn-Ga films prepared by sputtering." Master's thesis, Universidade de Aveiro, 2010. http://hdl.handle.net/10773/2302.

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Mestrado em Ciência e Engenharia de Materiais<br>Na última década as ligas ferromagnéticas com memórias de forma têm atraído uma atenção crescente devido à sua importância tecnológica e às suas interessantes propriedades físicas. Em particular, o estudo das propriedades de ligas ferromagnéticas com memórias de forma de Ni2MnGa sob a forma de filmes finos depositados por pulverização catódica por radiofrequência suscita um interesse especial por constituir uma possibilidade de aplicação em micro e nanosistemas. As suas propriedades dependem da estrutura dos filmes finos, que se desenvolve duran

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30

Gans, Eric. "Characterizing Ni-Mn-Ga bulk and composites for actuation and damping." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1324381841&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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31

Schlapps, Markus [Verfasser]. "Magnetotransport through nanoscale constrictions in ferromagnetic (Ga,Mn)As films / Markus Schlapps." München : Verlag Dr. Hut, 2010. http://d-nb.info/1009972456/34.

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32

Utz, Martin [Verfasser], Werner [Akademischer Betreuer] Wegscheider, and Dominique [Akademischer Betreuer] Bougeard. "Epitaxie von (Ga,Mn)As / Martin Utz. Betreuer: Werner Wegscheider ; Dominique Bougeard." Regensburg : Universitätsbibliothek Regensburg, 2012. http://d-nb.info/1027010067/34.

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Ivester, Robin H. C. (Robin Hansell Corbin) 1979. "Fabrication and characterization of Ni-Mn-Ga ferromagnetic shape-memory alloy composites." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8090.

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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.<br>Includes bibliographical references (leaves 46-48).<br>Ferromagnetic shape-memory alloys (FSMAs) are a recently-developed class of active materials which show large extensional strains when a magnetic field is applied. Shear strains of 6% have been observed at room temperature in martensitic Ni-Mn-Ga single crystals. The strain effect in Ni-Mn-Ga FSMAs is a result of twin boundary motion in the martensite phase, and can be induced by either field or stress. Most Ni-Mn-Ga FSMA research so

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34

Thevenard, Laura. "Etude des propriétés ferromagnétiques de (Ga, Mn) As au moyen de l'hydrogénation." Paris 6, 2007. https://tel.archives-ouvertes.fr/tel-00165545v2.

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Le (Ga,Mn)As est un matériau de choix pour l'électronique de spin, étant à la fois semiconducteur et ferromagnétique, à la suite de l'interaction d'échange entre les spins des atomes de manganèse (3d54s2), et ceux des trous qu'ils apportent. Sa température de Curie (Tc) se situe typiquement entre 50 et 150 K. A_n de découpler les dopages magnétique (xMn) et électrique (p), une technique de passivation par hydrogène a été développée, pour former des complexes (Mn,H) électriquement neutres. Ses e_ets magnétiques (apparition d'une phase paramagnétique), électriques (diminution de p) et structurau

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35

Li, Zongbin. "Study on crystallographic features of Ni-Mn-Ga ferromagnetic shape memory alloys." Thesis, Metz, 2011. http://www.theses.fr/2011METZ046S/document.

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Dans ce travail, les caractéristiques cristallographiques des martensites d’alliages Ni-Mn-Ga ont été étudiées en détail. En utilisant l’information de la superstructure de martensite 5M de Ni50Mn28Ga22 et de martensite 7M de Ni50Mn30Ga20 pour des mesures en EBSD, les structures cristallines ont été confirmées. Le nombre de variantes, les relations d’orientation entre les variantes adjacentes et les plans d’interface des variantes ont été déterminées sans ambiguïté. Sur la base de données d’orientations précises des variantes de martensite, les relations d’orientation de transformation de l’au

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36

Albagami, Abdullah Mohamed. "AN EXPERIMENTAL STUDY ON THE MAGNETIC AND EXCHANGE BIAS PROPERTIES OF SELECTED MN RICH NI-MN-GA BASED HEUSLER ALLOYS." Miami University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=miami1467158012.

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37

Bai, Jing. "Study on structural, electronic and magnetic properties of Ni-Mn-Ga and Ni-Mn-In ferromagnetic shape memory alloy systems." Thesis, Metz, 2011. http://www.theses.fr/2011METZ016S/document.

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Les Alliages à Mémoire de Forme Ferromagnétiques (AMFF) sont de nouveaux matériaux intelligents qui présentent des déformations induites par l’application d’un champ magnétique pouvant aller jusqu’à 10%. Ainsi, ils ont un fort potentiel pour de nombreuses applications technologiques. En outre, les couplages forts entre le champ magnétique et la structure dans ces matériaux rendent le phénomène « mémoire » très intéressant d'un point de vue scientifique. Ce travail présente une investigation de ces matériaux via des calculs ab initio effectues en utilisant la théorie de la fonctionnelle de la d

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38

Thevenard, Laura. "Etude des propriétés ferromagnétiques de (Ga,Mn)As par le biais de l'hydrogène." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2007. http://tel.archives-ouvertes.fr/tel-00165545.

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Le (Ga,Mn)As est un matériau de choix pour l'électronique de spin, étant à la fois semiconducteur et ferromagnétique, à la suite de l'interaction d'échange entre les spins des atomes de manganèse (3d5-4s2), et ceux des trous qu'ils apportent. Sa température de Curie (Tc) se situe typiquement entre 50 et 150 K.<br />Afin de découpler les dopages magnétique ([Mn]) et électrique (p), une technique de passivation par hydrogène a été développée, pour former des complexes (Mn,H) électriquement neutres. Ses effets magnétiques (apparition d'une phase paramagnétique), électriques (diminution de p) et s

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39

Glunk, Michael [Verfasser]. "Elektrische und magnetische Eigenschaften des verdünnten magnetischen Halbleiters (Ga,Mn)As / Michael Glunk." Ulm : Universität Ulm. Fakultät für Naturwissenschaften, 2012. http://d-nb.info/1025714938/34.

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40

Murray, Steven J. (Steven James) 1974. "Magneto-mechanical properties and applications of Ni-Mn-Ga ferromagnetic shape memory alloy." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/9163.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2000.<br>Vita.<br>Includes bibliographical references (p. 151-155).<br>Ferromagnetic shape memory alloys (FSMA's) have shown large strains under magnetic field as magnetic variants in the rnartensite rearrange to accommodate the applied field. The theoretical maximum field-induced strain is 6.3% in Ni-Mn-Ga FSMA, and results of 6.1% are presented. These strain establish FSMA's as a new class of active materials with strains much larger than piezoelectric or magnetostrictive actuators. This work l

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41

Kraimia, Meriam. "Magnéto-élasticité et magnéto-acoustique dans le semi-conducteur ferromagnétique (Ga,Mn)As." Electronic Thesis or Diss., Sorbonne université, 2020. http://www.theses.fr/2020SORUS339.

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Ce travail de thèse est consacré à l'étude de la dynamique d'aimantation excitée par des ondes acoustiques dans des couches de (Ga,Mn)As. Dans la première partie, nous présentons une étude à la fois expérimentale et théorique sur l'origine de la forte anisotropie magnétique uniaxiale dans le plan de la couche (Ga, Mn) inattendue pour la structure cristalline cubique. En supposant que cette anisotropie est d'origine magnéto-élastique, nous avons obtenu en développant un modèle théorique k.p une dépendance linéaire entre les constantes d'anisotropie magnétique et la déformation de cisaillement.

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42

Wenisch, Jan. "Ferromagnetic (Ga,Mn)As Layers and Nanostructures : Control of Magnetic Anisotropy by Strain Engineering." kostenfrei, 2008. http://www.opus-bayern.de/uni-wuerzburg/volltexte/2009/3455/.

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43

Laptev, Aleksej [Verfasser]. "Structural and electronic properties of Ni-Mn-Ga magnetic shape memory alloys / Aleksej Laptev." Konstanz : Bibliothek der Universität Konstanz, 2015. http://d-nb.info/109721303X/34.

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44

Owen, Man Hon Samuel. "Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors." Thesis, University of Cambridge, 2010. https://www.repository.cam.ac.uk/handle/1810/228705.

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The aim of the research project presented in this thesis is to investigate the effects of electrostatic gating on the magnetic properties of carrier-mediated ferromagnetic Ga1-xMnxAs diluted magnetic semiconductors. (Ga,Mn)As can be regarded as a prototype material because of its strong spin-orbit coupling and its crystalline properties which can be described within a simple band structure model. Compressively strained (Ga,Mn)As epilayer with more complex in-plane competing cubic and uniaxial magnetic anisotropies is of particular interest since a small variation of these competing anisotropy

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45

Song, Sang-Hoon. "Magnetic and magnetoelastic properties of M-substituted cobalt ferrites (M=Mn, Cr, Ga, Ge)." [Ames, Iowa : Iowa State University], 2007.

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46

Niemann, Robert Ingo. "Nukleation und Wachstum des adaptiven Martensits in epitaktischen Schichten der Formgedächtnislegierung Ni-Mn-Ga." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-183416.

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Magnetische Formgedächtnislegierungen sind Festkörper, die eine Phasenumwandlung erster Ordnung von einer hochsymmetrischen Phase (Austenit) zu einer niedersymmetrischen Phase (Martensit) durchlaufen. Dies kann in der Nähe von Raumtemperatur stattfinden und sowohl durch Temperaturänderung, als auch durch äußere Magnetfelder, mechanische Spannungen oder hydrostatischen Druck induziert werden. Daraus ergeben sich funktionale Eigenschaften, wie der magnetokalorische und der elastokalorische Effekt, eine magnetfeldinduzierte Dehnung und ein großer Magnetowiderstand. Zwillingsgrenzen im Martensit k

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47

Safarabadi, Mahboobeh [Verfasser]. "Ab initio calculation for Co nanoparticles, Fe2CoO4 and Co2FeO4 spinels, and Ni-Mn-Ga and Ni-Mn-Sn Heusler alloys / Mahboobeh Safarabadi." Bielefeld : Universitätsbibliothek Bielefeld, 2014. http://d-nb.info/1052097294/34.

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48

Pereira, Andre Luis de Jesus [UNESP]. "Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'Ga IND. 1-x Mn IND. xAs' preparados por sputtering." Universidade Estadual Paulista (UNESP), 2008. http://hdl.handle.net/11449/88472.

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Made available in DSpace on 2014-06-11T19:23:29Z (GMT). No. of bitstreams: 0 Previous issue date: 2008-07-14Bitstream added on 2014-06-13T20:10:53Z : No. of bitstreams: 1 pereira_alj_me_bauru.pdf: 714114 bytes, checksum: ff33a68553ac63831f470799ccc30d59 (MD5)<br>Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)<br>Atualmente a incorporação de Mn ao GaAs apresenta interesse destacado pela demonstrada capacidade do Mn em produzir buracos livres e ferromagnetismo nos compostos 'Ga IND. 1-x Mn IND. xAs' (0,00 < x '< OU =' 0,05) . Acredita-se que nestes materiais os buracos associados

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49

Pereira, Andre Luis de Jesus. "Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'Ga IND. 1-x Mn IND. xAs' preparados por sputtering /." Bauru : [s.n.], 2008. http://hdl.handle.net/11449/88472.

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Orientador: José Humberto Dias da Silva<br>Banca: Paulo Noronha Lisboa Filho<br>Banca: José Varalda<br>O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp<br>Resumo: Atualmente a incorporação de Mn ao GaAs apresenta interesse destacado pela demonstrada capacidade do Mn em produzir buracos livres e ferromagnetismo nos compostos 'Ga IND. 1-x Mn IND. xAs' (0,00 < x '< OU =' 0,05) . Acredita-se que nestes materiais os buracos associados à presença de sítios Mn+2 são também in

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50

Elsen, Marc. "Magnétorésistances et transfert de spin dans des hétérostructures tunnel à base de (Ga,Mn)As." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2007. http://tel.archives-ouvertes.fr/tel-00151311.

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L'introduction du semiconducteur ferromagnétique (Ga,Mn)As dans des hétérostructures semiconductrices ouvre la possibilité d'exploiter de nouveaux phénomènes de transport dépendant du spin. Dans des jonctions tunnel composées d'électrodes de (Ga,Mn)As, nous avons étudié l'influence de la hauteur et de l'épaisseur d'une barrière d'(In,Ga)As, ainsi que l'influence du recuit sur la magnétorésistance tunnel (TMR). Nous nous sommes également intéressés à de nouveaux effets d'anisotropie de résistance tunnel liés au fort couplage spin orbite des trous dans (Ga,Mn)As (TAMR). Une interprétation généra

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