Relevant bibliographies by topics / Ga sb

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Ga sb'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Ga sb"

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C. Sharma, Romesh, and Mamta Srivastava. "Phase equilibria calculations of AlSb, AlGa and AlGaSb systems." Calphad 16, no. 4 (October 1992): 387–408. http://dx.doi.org/10.1016/0364-5916(92)90014-o.

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Raisin, Claude, Babakor Saguintaah, Hassan Tegmousse, Louis Lassabatere, Bernard Girault, and Claude Alibert. "Sur l’élaboration par jets moléculaires et les propriétés optiques d’hétérojonctions Ga Al Sb/Ga Sb." Annales des Télécommunications 41, no. 1-2 (January 1986): 50–58. http://dx.doi.org/10.1007/bf02998270.

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Lu, Yegang, Sannian Song, Xiang Shen, Guoxiang Wang, Liangcai Wu, Zhitang Song, Bo Liu, and Shixun Dai. "Phase change characteristics of Sb-rich Ga–Sb–Se materials." Journal of Alloys and Compounds 586 (February 2014): 669–73. http://dx.doi.org/10.1016/j.jallcom.2013.10.076.

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Matsukura, F., E. Abe, and H. Ohno. "Magnetotransport properties of (Ga, Mn)Sb." Journal of Applied Physics 87, no. 9 (May 2000): 6442–44. http://dx.doi.org/10.1063/1.372732.

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Raghavan, V. "Fe-Ga-Sb (Iron-Gallium-Antimony)." Journal of Phase Equilibria & Diffusion 25, no. 1 (February 1, 2004): 85–86. http://dx.doi.org/10.1361/10549710417740.

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Ngai, T. L., R. C. Sharma, and Y. A. Chang. "The Ga−Sb (Gallium-Antimony) system." Bulletin of Alloy Phase Diagrams 9, no. 5 (October 1988): 586–91. http://dx.doi.org/10.1007/bf02881961.

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Raghavan, V. "Fe-Ga-Sb (iron-gallium-antimony)." Journal of Phase Equilibria and Diffusion 25, no. 1 (February 2004): 85–86. http://dx.doi.org/10.1007/s11669-004-0179-5.

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Brar, Berinder, and Herbert Kroemer. "Hole transport across the (Al,Ga)(As,Sb) barrier in InAs–(Al,Ga)(As,Sb) heterostructures." Journal of Applied Physics 83, no. 2 (January 15, 1998): 894–99. http://dx.doi.org/10.1063/1.366774.

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Ngai, T. Leo, and Rainer Schmid-Fetzer. "Activity of Oxygen in Liquid Ga-In-Sb Alloys / Sauerstoffaktivität in flüssigen Ga-In-Sb-Legierungen." International Journal of Materials Research 82, no. 4 (April 1, 1991): 289–97. http://dx.doi.org/10.1515/ijmr-1991-820406.

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Ngai, T. Leo, and Rainer Schmid-Fetzer. "Activity of Oxygen in Liquid Ga-In-Sb Alloys / Sauerstoffaktivität in flüssigen Ga-In-Sb-Legierungen." International Journal of Materials Research 82, no. 4 (April 1, 1991): 298–303. http://dx.doi.org/10.1515/ijmr-1991-820407.

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Dissertations / Theses on the topic "Ga sb"

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Cristea, Peter. "Molekularstrahlepitaxie im Materialsystem Ga(N, Sb)." [S.l. : s.n.], 2002. http://www.freidok.uni-freiburg.de/volltexte/563.

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Gies, S., M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, and W. Heimbrodt. "Band offset in (Ga, In)As/Ga(As, Sb) heterostructures." AMER INST PHYSICS, 2016. http://hdl.handle.net/10150/622465.

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A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature-and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k.p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In) As and Ga(As, Sb) quantum wells. Published by AIP Publishing.
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Graf, Nikolaus Johannes Hubertus. "Molekularstrahlepitaxie in den Mischsystemen Ga(Sb,Bi) und In(Sb,Bi)." [S.l. : s.n.], 2008. http://nbn-resolving.de/urn:nbn:de:bsz:25-opus-57744.

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Garandet, Jean-Paul. "Etude des phénomènes de transport et des défauts cristallins dans des alliages Ga-Sb et Ga-In-Sb élaborés par la méthode Bridgman." Grenoble INPG, 1989. http://www.theses.fr/1989INPG0058.

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Löber, Thomas Henning [Verfasser]. "Ga(As)Sb-Quantenpunkte und -Quantenpunkt-Laser / Thomas Henning Löber." München : Verlag Dr. Hut, 2011. http://d-nb.info/1018982159/34.

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LE, CLANCHE MARIE-CLAUDE. "Diagrammes de phases ni-ga-sb et er-ga-sb : applications a la metallurgie du contact ni/gasb et a la croissance epitaxiale d'heterostructures ersb/gasb." Rennes 1, 1995. http://www.theses.fr/1995REN10087.

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Dans la technologie des semiconducteurs sc iii-v, la fabrication reproductible de contacts (metal/sc iii-v) fiables et de bonne qualite reste un probleme imparfaitement resolu. Un contact ideal constitue d'un film metallique thermodynamiquement stable en presence du sc, peut etre obtenu par interdiffusion en phase solide d'une couche mince de metal avec le substrat. La complexite des interdiffusions dans les contacts (m/sc iii-v) comparees a celles dans les contacts (m/si) a conduit les technologues a envisager parallelement d'autres voies, comme l'epitaxie par jets moleculaires (ejm) de composes metalliques sur les sc iii-v. Les diagrammes ternaires ni-ga-sb et er-ga-sb, determines respectivement a 600 et 800c, sont caracterises par diffraction x, meb et microsonde. Celui de ni-ga-sb montre l'existence d'un phase ternaire originale derivee de la structure type nias. Les chemins de diffusion dans le couple ni/gasb sont determines a 550c par analyses quantitatives. Ceux-ci, tres complexes, temoignent de morphologies de zones de reaction perturbees par rapport a une stratification ideale. Les interdiffusions en phase solide entre un film de nickel et le substrat gasb, apres traitements thermiques entre 360 et 450c, et les epitaxies de films minces monocristallins de ersb sur gasb ont ete caracterisees par diverses techniques (diffraction x, rbs, met, rheed). L'etape finale des interdiffusions dans le contact (ni/gasb), conduit au melange des binaires ni#2ga#3 et nisb. Aucune de ces phases n'est un candidat ideal pour la realisation de contacts contrairement au compose binaire ersb qui presente avec gasb tous les criteres d'epitaxie et de stabilite thermodynamique requis. En effet, la croissance d'heterostructures ersb/gasb, puis gasb/ersb/gasb d'une qualite quasi parfaite a ete realisee
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Nagu, Manikanda Prabu [Verfasser], and Barbara [Akademischer Betreuer] Albert. "Synthesis and thermoelectric studies of Zintl phases in the systems of Ba-Al-Sb, Ba-Ga-Sb, and Ba-In-Sb / Manikanda Prabu Nagu. Betreuer: Barbara Albert." Darmstadt : Universitäts- und Landesbibliothek Darmstadt, 2014. http://d-nb.info/1110980167/34.

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Coudray, Paul. "Contribution à la passivation des photodétecteurs Ga(Al)Sb : étude de la sulfuration." Montpellier 2, 1993. http://www.theses.fr/1993MON20174.

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Avec la miniaturisation des composants microelectroniques, la passivation est devenue une etape indispensable de la fabrication des dispositifs. Une etude bibliographique de la sulfuration de gaas, m'a permis de proposer un protocole de stabilisation de la surface de gasb base sur une sulfuration par voie humide. Des analyses de surface telles que les spectroscopies de photo-electrons ou d'electrons auger et la spectro-ellipsometrie apportent des informations significatives sur la qualite des surfaces traitees. Une etude comparative de contacts schottky realises apres differents traitements permet de correler l'amelioration des caracteristiques electriques des contacts schottky a la qualite des surfaces sulfurees. L'integration de la sulfuration dans la technologie de fabrication des photodetecteurs mesa a base de ga(al)sb a conduit a une nette diminution des courants de fuite generes en surface
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Rajabi, Mina. "Process optimization of IR detectors based on In(Ga)Sb QDs in InAs matrix." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-108221.

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This diploma project has been focused on optimization of the D2B IR detector fabrication process using different mesa sidewall treatments and passivation methods. X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscope (AFM) measurements have been carried out on samples treated by different wet etching methods, to analyze their surface chemical composition and roughness. The surface roughness has been improved by critic etching, annealing and NaClO sequential treatment steps. Then these results have been utilized to improve the process of the D2B IR detectors. The dark current of the fabricated detectors passivated with various techniques have been characterized by I-V measurements at low (77 K) and room temperatures. The dark current mechanisms owing to surface shunt or bulk leakage are investigated by dark current temperature dependence analysis. By photoresist passivation devices with least leakage current are achieved.
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Degtyareva, Olga. "X-ray diffraction studies of complex high-pressure phases of Bi, Sb, As, and Ga." Thesis, University of Edinburgh, 2003. http://hdl.handle.net/1842/13609.

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The work presented in this thesis applies advanced high-resolution powder diffraction techniques in combination with novel single-crystal diffraction techniques, recently developed in the Edinburgh High-Pressure Group, to studies of complex HP phases of group-V elements and Ga. The HP phases Bi-III and Sb-II, a subject of many experimental studies in the past and present, are shown to have an incommensurate host-guest structure, similar to that found in alkaline-earth elements. The basic host-guest structure is shown to be modulated, and a single-crystal diffraction study on Bi-III has revealed the true from of the modulation between the host and guest components. From HP powder diffraction studies of Sb, a new incommensurate host-guest phase Sb-II* is discovered, and a novel incommensurate to incommensurate phase transition is observed. The HP phase As-III is solved from powder diffraction data as a modulated incommensurate host-guest structure, and is shown to be the same as Sb-II*. Four-dimensional formalism is applied to the crystallographic description of these incommensurate phases. The group-III element Ga is known to have a complex HP behaviour with metastable effects and several phase transitions. The structure of the HP phase Ga-II was long believed to be cubic with 12 atoms in the unit cell but is shown from single-crystal diffraction data to be orthorhombic with 104 atoms in the unit cell. A new HP phase is discovered to be stable in Ga above the Ga-II phase, and its structure is solved from powder diffraction techniques as rhombohedral with 6 atoms in the unit cell, which represents a new structure type of an element. A revised phase diagram of Ga is proposed.
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Book chapters on the topic "Ga sb"

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Predel, B. "Ga - Sb (Gallium - Antimony)." In Dy - Er … Ir - Y, 101–3. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-24778-1_62.

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Katayama, Iwao, Yusuke Sendai, Dragana Zivkovic, Dragan Manasijević, Zivan Zivkovic, and Hiromi Yamashita. "Experimental Determination fo Ga Activity in Liquid Ga-Sb-Tl Alloys by EMF Method." In Solid State Phenomena, 71–76. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-33-7.71.

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Živković, Dragana, Iwao Katayama, Živan Živković, and Dragan Manasijević. "Thermodynamic Investigation of Liquid Alloys in Ga-Sb-Bi-Sn System." In Materials Science Forum, 123–28. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-980-6.123.

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Ryan, D. H., N. R. Lee-Hone, J. M. Cadogan, K. Ahn, V. K. Pecharsky, and K. A. Gschneidner. "Doping-induced valence change in Yb5Ge4 − x (Sb, Ga) x : (x ≤ 1)." In ICAME 2011, 639–43. Dordrecht: Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-4762-3_110.

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Dost, S., R. A. Meric, B. Lent, and R. F. Redden. "Numerical Simulation of the Growth of Ga X In1−X Sb by the Travelling Heater Method." In The Kluwer International Series in Engineering and Computer Science, 103–21. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0849-6_8.

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Chung, Woon Jin, Hong Seok Seo, Bong Je Park, Joon Tae Ahn, and Yong Gyu Choi. "Fabrication of the Pr3+ Doped Ge-Ga-Sb-Se Glass Optical Fiber for U-Band Application." In Advances in Glass and Optical Materials II, 99–106. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144138.ch9.

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Harada, Hisatomi, and Tetsuya Hatanaka. "Content of Be, Ga, Sb, Cs, Ba, La, Tl and Bi in wild plants: screening for accumulating plants." In Plant Nutrition for Sustainable Food Production and Environment, 541–42. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-009-0047-9_168.

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Wang, H. F., K. F. Cai, H. Li, L. Wang, and X. L. Li. "Synthesis and Thermoelectric Properties of Ba8Ga16+xSbxGe30-2x (x=0,1) Clathrate Single Crystals." In High-Performance Ceramics V, 553–55. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/0-87849-473-1.553.

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Singh, Amit Kumar, Amit Rathi, Md Riyaj, and P. A. Alvi. "Wavefunctions and Optical Gain in $$ \text{In}_{0.3} {\text{Ga}}_{0.7} {\text{As}}/{\text{GaAs}}_{0.4} {\text{Sb}}_{0.6} $$In0.3Ga0.7As/GaAs0.4Sb0.6 Type-II Double Quantum Well Nanoheterostructure Under External Uniaxial Strain." In Engineering Vibration, Communication and Information Processing, 143–51. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1642-5_13.

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"Al-Ga-Sb (Aluminium-Gallium-Antimony)." In Non-Ferrous Metal Systems. Part 1, 1–13. Berlin, Heidelberg: Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/10915981_11.

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Conference papers on the topic "Ga sb"

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Mansfield, Lorelle M., Darius Kuciauskas, Patricia Dippo, Jian V. Li, Karen Bowers, Bobby To, Clay DeHart, and Kannan Ramanathan. "Optoelectronic investigation of Sb-doped Cu(In,Ga)Se2." In 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC). IEEE, 2015. http://dx.doi.org/10.1109/pvsc.2015.7356156.

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Gong, Haibo, Rubab Ume, Vadim Tokranov, Michael Yakimov, Devendra Sadana, Kevin Brew, Guy Cohen, et al. "Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State." In 2021 Device Research Conference (DRC). IEEE, 2021. http://dx.doi.org/10.1109/drc52342.2021.9467153.

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Richter, Johannes, Johannes Strassner, Thomas Loeber, and Henning Fouckhardt. "Ga(As)Sb/GaAs quantum dots for emission around 1300 nm." In 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC. IEEE, 2013. http://dx.doi.org/10.1109/cleoe-iqec.2013.6800936.

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Shi, Yan-li, Rui Hui, Wei-Feng Zhang, Wen-Jin He, Jin Yuan, Jiang-Min Feng, Fan Li, and Li-Ming Liu. "Temperature characteristic of InAs/Ga(In)Sb middle wavelength infrared detectors." In ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, edited by Haimei Gong, Zelin Shi, Qian Chen, and Jin Lu. SPIE, 2013. http://dx.doi.org/10.1117/12.2034304.

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Tu, Nguyen Thanh, Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka. "High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528851.

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Chih-Chung Chang, Kin-Fu Kao, Ming-Jinn Tsai, Tri-Rung Yew, and Tsung-Shune Chin. "Crystallization kinetics of amorphous Ga-Sb films extended for phase-change memory." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC 2010). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5424656.

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Loeber, Thomas Henning, Johannes Strassner, Sandra Wolff, Bert Laegel, and Henning Foukhardt. "Highly ordered Ga(As)Sb quantum dots grown on pre-structured GaAs." In SPIE OPTO, edited by Diana L. Huffaker and Holger Eisele. SPIE, 2017. http://dx.doi.org/10.1117/12.2252221.

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Grein, Christoph H., and Henry Ehrenreich. "Microscopic model of impact ionization in Al x Ga 1-x Sb." In Symposium on Integrated Optoelectronics, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 2000. http://dx.doi.org/10.1117/12.382120.

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Plis, E., H. S. Kim, J. B. Rodriguez, G. D. Bishop, Y. D. Sharma, A. Khoshakhlagh, L. R. Dawson, et al. "nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices." In SPIE Defense and Security Symposium, edited by Bjørn F. Andresen, Gabor F. Fulop, and Paul R. Norton. SPIE, 2008. http://dx.doi.org/10.1117/12.780375.

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Takiguchi, Kosuke, Le Duc Anh, Takahiro Chiba, Tomohiro Koyama, Daichi Chiba, and Masaaki Tanaka. "Gate-controlled proximity magnetoresistance in an InAs / (Ga,Fe)Sb quantum well heterostructure." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819267.

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Reports on the topic "Ga sb"

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Tsai, C. T., and R. S. Williams. Solid Phase Equilibria in the Pi-Ga-As and Pt-Ga-Sb Systems. Fort Belvoir, VA: Defense Technical Information Center, July 1988. http://dx.doi.org/10.21236/ada198654.

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Bedair, S. M., and J. R. Hauser. Fundamental Studies in the OM-CVD Growth of Ga-In-As-Sb. Fort Belvoir, VA: Defense Technical Information Center, May 1987. http://dx.doi.org/10.21236/ada184822.

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Dutta, P. S., A. G. Ostrogorsky, and R. J. Gutmann. Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb. Office of Scientific and Technical Information (OSTI), May 1997. http://dx.doi.org/10.2172/319839.

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Chen, E., D. C. Paine, P. Uppal, J. S. Ahearn, K. Nichols, and G. W. Charache. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications. Office of Scientific and Technical Information (OSTI), June 1998. http://dx.doi.org/10.2172/307978.

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P.S. Dutta, G. Rajagopalan, R.J. Gutmann, and G. Nichols. Generation of Compositionally Graded Ga{sub 1-x}In{sub x}Sb Seed by Solute Diffusion. Office of Scientific and Technical Information (OSTI), August 2002. http://dx.doi.org/10.2172/821859.

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Ehsani, H., I. Bhat, C. Hitchcock, R. J. Gutmann, G. Charache, and M. Freeman. Tellurium doping of Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy. Office of Scientific and Technical Information (OSTI), June 1998. http://dx.doi.org/10.2172/307974.

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Ehsani, H., I. Bhat, C. Hitchcock, R. Gutmann, G. Charache, and M. Freeman. Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy. Office of Scientific and Technical Information (OSTI), May 1997. http://dx.doi.org/10.2172/319849.

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P.S. Dutta, G. Rajagopalan, R.J. Gutmann, and G. Nichols. Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique. Office of Scientific and Technical Information (OSTI), August 2003. http://dx.doi.org/10.2172/821861.

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Chen, Y. C., V. Bucklen, K. Rajan, M. Freeman, R. P. Jr Cardines, G. Nichols, P. Sanders, and G. Charache. Phase stability in Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}/GaSb heterostructures. Office of Scientific and Technical Information (OSTI), October 1998. http://dx.doi.org/10.2172/307979.

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Boyer, J. R., and W. T. Haines. Bridgman growth and characterization of bulk single crystals of Ga{sub 1{minus}x}In{sub x}Sb for thermophotovoltaic applications. Office of Scientific and Technical Information (OSTI), December 1997. http://dx.doi.org/10.2172/319872.

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