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Journal articles on the topic 'Ga sb'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

C. Sharma, Romesh, and Mamta Srivastava. "Phase equilibria calculations of AlSb, AlGa and AlGaSb systems." Calphad 16, no. 4 (October 1992): 387–408. http://dx.doi.org/10.1016/0364-5916(92)90014-o.

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2

Raisin, Claude, Babakor Saguintaah, Hassan Tegmousse, Louis Lassabatere, Bernard Girault, and Claude Alibert. "Sur l’élaboration par jets moléculaires et les propriétés optiques d’hétérojonctions Ga Al Sb/Ga Sb." Annales des Télécommunications 41, no. 1-2 (January 1986): 50–58. http://dx.doi.org/10.1007/bf02998270.

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3

Lu, Yegang, Sannian Song, Xiang Shen, Guoxiang Wang, Liangcai Wu, Zhitang Song, Bo Liu, and Shixun Dai. "Phase change characteristics of Sb-rich Ga–Sb–Se materials." Journal of Alloys and Compounds 586 (February 2014): 669–73. http://dx.doi.org/10.1016/j.jallcom.2013.10.076.

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4

Matsukura, F., E. Abe, and H. Ohno. "Magnetotransport properties of (Ga, Mn)Sb." Journal of Applied Physics 87, no. 9 (May 2000): 6442–44. http://dx.doi.org/10.1063/1.372732.

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5

Raghavan, V. "Fe-Ga-Sb (Iron-Gallium-Antimony)." Journal of Phase Equilibria & Diffusion 25, no. 1 (February 1, 2004): 85–86. http://dx.doi.org/10.1361/10549710417740.

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6

Ngai, T. L., R. C. Sharma, and Y. A. Chang. "The Ga−Sb (Gallium-Antimony) system." Bulletin of Alloy Phase Diagrams 9, no. 5 (October 1988): 586–91. http://dx.doi.org/10.1007/bf02881961.

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7

Raghavan, V. "Fe-Ga-Sb (iron-gallium-antimony)." Journal of Phase Equilibria and Diffusion 25, no. 1 (February 2004): 85–86. http://dx.doi.org/10.1007/s11669-004-0179-5.

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8

Brar, Berinder, and Herbert Kroemer. "Hole transport across the (Al,Ga)(As,Sb) barrier in InAs–(Al,Ga)(As,Sb) heterostructures." Journal of Applied Physics 83, no. 2 (January 15, 1998): 894–99. http://dx.doi.org/10.1063/1.366774.

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9

Ngai, T. Leo, and Rainer Schmid-Fetzer. "Activity of Oxygen in Liquid Ga-In-Sb Alloys / Sauerstoffaktivität in flüssigen Ga-In-Sb-Legierungen." International Journal of Materials Research 82, no. 4 (April 1, 1991): 289–97. http://dx.doi.org/10.1515/ijmr-1991-820406.

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10

Ngai, T. Leo, and Rainer Schmid-Fetzer. "Activity of Oxygen in Liquid Ga-In-Sb Alloys / Sauerstoffaktivität in flüssigen Ga-In-Sb-Legierungen." International Journal of Materials Research 82, no. 4 (April 1, 1991): 298–303. http://dx.doi.org/10.1515/ijmr-1991-820407.

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11

Tochaei, Amir Akbari. "High field properties of electron transport in bulk zincblende In0.53Ga0.47As and In0.53Ga0.47Sb." Modern Physics Letters B 29, no. 10 (April 20, 2015): 1550038. http://dx.doi.org/10.1142/s0217984915500384.

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In this paper, electron transport properties in bulk zincblende In 0.53 Ga 0.47 As and In 0.53 Ga 0.47 Sb in high electric field are presented by using an ensemble Monte Carlo method. The steady state electron transport and transient situation in these two ternary semiconductors are reviewed and compared together by the three-valley model of conduction band. The results show that In 0.53 Ga 0.47 Sb has lower threshold field and higher drift velocity peak in comparison with In 0.53 Ga 0.47 As . Moreover, In 0.53 Ga 0.47 Sb has higher overshoot velocity and shorter time response in high electric field in comparison with In 0.53 Ga 0.47 As . However, overshoot relaxation time is equal for them in two applied electric fields.

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12

Gies, S., M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, and W. Heimbrodt. "Band offset in (Ga, In)As/Ga(As, Sb) heterostructures." Journal of Applied Physics 120, no. 20 (November 28, 2016): 204303. http://dx.doi.org/10.1063/1.4968541.

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13

Katayama, Iwao, Yusuke Sendai, Dragana Zivkovic, Dragan Manasijević, Zivan Zivkovic, and Hiromi Yamashita. "Experimental Determination fo Ga Activity in Liquid Ga-Sb-Tl Alloys by EMF Method." Solid State Phenomena 127 (September 2007): 71–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.127.71.

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EMF of galvanic cell with zirconia –based solid electrolytes was measured to determine the activity of Ga in liquid Ga-Sb-Tl alloys between 946 and 1233 K along the tree pseudobinary lines of Ga-(Sb/Tl), (xSb/xTl = 1/3, 1/1 and 3/1) The cell used was: Ga,Ga2O3|(ZrO2)0.92(Y2O3) 0.08|Ga-Sb-Tl, Ga2O3. The activity of Ga (aGa ) was derived by :-3EF = RT ln aGa , where E is cell potential, F is Faraday’s constant, R is gas constant and T is cell temperature. The activity of Ga shows slight negative deviations from ideality in the section with positive deviation from ideality in the whole composition range. The activity of gallium shows slight negative deviations from Raoult’s law in the section with xSb/xTl = 3/1, moderately positive deviations in xSb/xTl =1/1 section and large positive deviations in xSb/xTl =1/3 section.

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14

Li, Yuan Shan, Yu Feng Luo, and Xu Chen. "Effect of Microelements on Sn-20Bi Solder." Advanced Materials Research 335-336 (September 2011): 207–11. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.207.

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Adding microelements Ag In Ga and Sb into Sn-20Bi solder, the changes of melting properties and microstructures of the solder were observed. The experimental result showed that when the content of Ag was 0.7% (wt%), In was 0.1% , Ga was 0.5% and Sb was 0.5%, the melting points of the solder reduced to the bottom and the segregation of Bi obviously decreased. Sb was not suitable to add solely but when it was added together with Ag In and Ga, it can produce a good effect on reinforcement of solid solution, furthermore it can restrain the phase change of Sn. The Sn-Bi-X solder with the best compositions of Ag In Ga and Sb has a near melting point to Sn-37Pb. The solder is close to practicality without segregation of Bi.

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15

Gomidzelovic, Lidija, Dragana Zivkovic, and Ivan Mihajlovic. "Thermodynamic analysis of ternary system Ga-In-Sb." Chemical Industry 62, no. 3 (2008): 153–59. http://dx.doi.org/10.2298/hemind0803153g.

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The results of thermodynamic analysis of ternary system Ga-In-Sb are presented in these work. Thermodynamic analysis was carried out by applying general solution predicting method in sections from Ga, In and Sb corner, respectively, with following ratios 1:3, 1:1, 3:1 in the temperature interval 873 to 1673 K. Based on this, excess molar Gibbs energies and activity of all components in specified temperature interval were calculated. Also, using the obtained data and MLAB software, ternary interaction parameters for Ga-In-Sb system were determined.

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16

Gao, Bo, Jin Lu, Huai-Dong Zhou, Shu-Hua Yin, and Hong Hao. "The distribution, accumulation and potential source of seldom monitored trace elements in sediments of Beijiang River, South China." Water Science and Technology 65, no. 12 (June 1, 2012): 2118–24. http://dx.doi.org/10.2166/wst.2012.128.

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A geochemical study of Beijiang River sediments was carried out to analyze the concentrations, distribution, accumulation and potential sources of the seldom monitored trace elements (SMTEs: Sc, V, Co, Ga, Y, Sn and Sb). The mean concentrations of Sc, V, Co, Ga, Y, Sn and Sb were 8.2, 60.3, 9.6, 17.2, 28.6, 85.6 and 39.0 mg/kg, respectively. The concentrations of the SMTEs, together with their spatial distribution showed that the SMTEs were mainly due to anthropogenic inputs from the metal smelting industries and local mining activities in the upper region of the river. The assessment by geoaccumulation index indicates that Sc, V, Co, Ga and Y are at the unpolluted level, Sn is at the ‘strongly contaminated’ level, and Sb is at the ‘extremely contaminated’ level. The pollution level of the SMTEs is: Sb > Sn > Y > Ga > Co > V > Sc. The results of correlation analysis and principal component analysis indicated the Sn and Sb were positively correlated with each other, indicating a common source in sediments. In conclusion, our results indicate that the sediments in Beijiang River have been severely contaminated by Sn and Sb.

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17

Liu, R., Y. Zhong, L. Yu, H. Kim, S. Law, J. M. Zuo, and D. Wasserman. "Mid-infrared emission from In(Ga)Sb layers on InAs(Sb)." Optics Express 22, no. 20 (September 29, 2014): 24466. http://dx.doi.org/10.1364/oe.22.024466.

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18

Wang, E. G., J. H. Xu, W. P. Su, and C. S. Ting. "Electronic structures of Sb/Ga(Al)Sb (111) semimetal‐semiconductor superlattices." Journal of Applied Physics 76, no. 9 (November 1994): 5318–26. http://dx.doi.org/10.1063/1.357183.

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19

Thao, Cao Phuong, Thi Tran Anh Tuan, Dong-Hau Kuo, Wen-Cheng Ke, and Thach Thi Via Sa Na. "Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition." Coatings 10, no. 3 (February 27, 2020): 210. http://dx.doi.org/10.3390/coatings10030210.

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Sb anion-substituted gallium nitride films were fabricated by radio frequency reactive sputtering with single Sb-containing cermet targets with different Sb contents under Ar/N2 atmosphere. n-type GaN films with electron concentration of (1.40 ± 0.1) × 1017 cm−3 inverted to p-type Sb-GaN with hole concentration of (5.50 ± 0.3) × 1017 cm−3. The bandgap energy of Sb anion-added Sb-GaN films decreased from 3.20 to 2.72 eV with increasing Sb concentration. The formation of p-type Sb-GaN is attributed to the formation of Ga vacancy at higher Sb concentration. The coexistence of Sb at the Ga cation site and N anion site is an interesting and important result, as GaNSb had been well developed for highly mismatched alloys. The hetero-junction with p-type Sb-GaN/n-Si diodes was all formed by radio frequency (RF) reactive sputtering technology. The electrical characteristics of Sb-GaN diode devices were investigated from −20 to 20 V at room temperature (RT).

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20

Rajabi, Behzad, and Mahdi Vadizadeh. "Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor." International Journal of Modern Physics B 35, no. 12 (May 10, 2021): 2150161. http://dx.doi.org/10.1142/s0217979221501617.

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Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb vertical heterojunctionless tunneling field effect transistor (VHJL-TFET) has been suggested to optimize the digital benchmarking parameters. In the proposed VHJL-TFET with type II heterostructure (i.e., [Formula: see text] and [Formula: see text]), slight changes in gate voltage cause switching from OFF-state to ON-state. As a result, the electrical properties of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET are excellent in the sub-threshold region. The heterostructure with III–V semiconductors in the source-channel region increases the ON-state current ([Formula: see text]) of the VHJL-TFET. Comparing the results of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with the simulated devices with type I heterostructure (i.e., [Formula: see text] and [Formula: see text]) and type III heterostructure (i.e., [Formula: see text] and [Formula: see text]) shows the improvement by 26% and 15% in the average subthreshold slope (SS). Sensitivity analysis for VHJL-TFET with the type II heterostructure shows that the sensitivity of OFF-state current ([Formula: see text] to the body thickness ([Formula: see text] and doping concentration ([Formula: see text] is more than the sensitivity of the other main electrical parameters. The Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with a channel length of 20 nm, [Formula: see text] nm, and [Formula: see text] cm[Formula: see text] showed the [Formula: see text] mV/dec, [Formula: see text]/[Formula: see text], and [Formula: see text] mA/um. As a result, Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET can be a reasonable choice for digital applications.

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21

Zhou, Xinxin, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah, and Jo Shien Ng. "Thin Al 1− x Ga x As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown." Royal Society Open Science 4, no. 5 (May 2017): 170071. http://dx.doi.org/10.1098/rsos.170071.

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When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al 1– x Ga x As 0.56 Sb 0.44 p–i–n diode wafers (Ga composition from 0 to 0.15), plus measurements of avalanche gain and dark current. Based on data obtained from 77 to 297 K, the alloys Al 1− x Ga x As 0.56 Sb 0.44 exhibited weak temperature dependence of avalanche gain and breakdown voltage, with temperature coefficient approximately 0.86–1.08 mV K −1 , among the lowest values reported for a number of semiconductor materials. Considering no significant tunnelling current was observed at room temperature at typical operating conditions, the alloys Al 1− x Ga x As 0.56 Sb 0.44 (Ga from 0 to 0.15) are suitable for InP substrates-based APDs that require excellent temperature stability without high tunnelling current.

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22

Girard, C., J. M. Miane, J. Riou, R. Baret, and J. P. Bros. "Enthalpy of formation of AlSb and AlGaSb liquid alloys." Journal of the Less Common Metals 128 (February 1987): 101–15. http://dx.doi.org/10.1016/0022-5088(87)90196-2.

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23

Wang, Wenjie, Jing Chen, Jiajun Deng, Jiantao Che, Bing Hu, and Xin Cheng. "Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film." RSC Advances 9, no. 19 (2019): 10776–80. http://dx.doi.org/10.1039/c8ra10256b.

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24

Thomas, Tsai C., and R. Stanley Williams. "Solid phase equilibria in the Au-Ga-As, Au-Ga-Sb, Au-In-As, and Au-In-Sb ternaries." Journal of Materials Research 1, no. 2 (April 1986): 352–60. http://dx.doi.org/10.1557/jmr.1986.0352.

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The Au-Ga-As, Au-Ga-Sb, Au-In-As, and Au-In-Sb ternaries were surveyed using x-ray powder diffraction to determine which metallic phases exist at equilibrium with the III-V compound semiconductors. In closed, small-volume systems (i.e., formation of gas-phase products was prevented), Au does not react with GaAs but does react with the other III-V's investigated to produce Au-group III intermetallic compounds and another solid phase containing the group V element. However, each semiconductor formed pseudobinary systems with at least two different intermetallic compounds. The bulk phase diagrams determined in this study provide frameworks within which much of the experimental data in the literature concerning the products of reactions at Au/III-V interfaces can be understood.

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25

Gao, Bo, Xin Wei, Huaidong Zhou, Jin Lu, Hong Hao, and Xiaohong Wan. "Pollution Characteristics and Possible Sources of Seldom Monitored Trace Elements in Surface Sediments Collected from Three Gorges Reservoir, China." Scientific World Journal 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/170639.

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A geochemical study of Three Gorges Reservoir (TGR) sediments was carried out to analyze the concentrations, distribution, accumulation, and potential sources of the seldom monitored trace elements (SMTEs). The mean concentrations of Li, B, Be, Bi, V, Co, Ga, Sn, Sb, and Tl were 47.08, 2.47, 59.15, 0.50, 119.20, 17.83, 30.31, 3.25, 4.14, and 0.58 mg/kg, respectively. The concentrations of total SMTEs, together with their spatial distribution, showed that the SMTEs were mainly due to anthropogenic inputs in the region of TGR. The assessment by Geoaccumulation Index indicates that Tl, Be, V, Co, and Fe are at the unpolluted level; Bi, Li, Ga, and Sn were at the “uncontaminated to moderately contaminated” level. However, B was classified as “moderately contaminated” level and Sb was ranked as “strongly contaminated” level. The pollution level of the SMTEs is Sb>B>Bi>Li>Ga>Sn>Tl>Be>V>Co>Fe. The results of Correlation Analysis and Principal Component Analysis indicated Be, V, Co, Ga, Sn, Tl, Bi, and Fe in sediments have a natural source. B and Li were positively correlated with each other and mainly attributed into similar anthropogenic input. In addition, Sb has less relationship with other SMTEs, indicating that Sb has another kind of anthropogenic source.

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26

Pethes, I., R. Chahal, V. Nazabal, C. Prestipino, S. Michalik, J. Darpentigny, and P. Jóvári. "Chemical order in Ge-Ga-Sb-Se glasses." Journal of Non-Crystalline Solids 484 (March 2018): 49–56. http://dx.doi.org/10.1016/j.jnoncrysol.2018.01.017.

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27

Tu, Nguyen Thanh, Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka. "(Ga,Fe)Sb: A p-type ferromagnetic semiconductor." Applied Physics Letters 105, no. 13 (September 29, 2014): 132402. http://dx.doi.org/10.1063/1.4896539.

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28

Semakova, A. A., N. L. Bazhenov, and K. D. Mynbaev. "Carrier lifetime in InAs(Ga,Sb,P) heterostructures." Journal of Physics: Conference Series 1038 (June 2018): 012097. http://dx.doi.org/10.1088/1742-6596/1038/1/012097.

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29

Zborowski, J. T., A. Vigliante, S. C. Moss, and T. D. Golding. "Interface properties of (In,Ga)Sb/InAs heterostructures." Journal of Applied Physics 79, no. 11 (June 1996): 8379–83. http://dx.doi.org/10.1063/1.362557.

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30

Putero, Magali, Marie-Vanessa Coulet, Christophe Muller, Guy Cohen, Marinus Hopstaken, Carsten Baehtz, and Simone Raoux. "Density change upon crystallization of Ga-Sb films." Applied Physics Letters 105, no. 18 (November 3, 2014): 181910. http://dx.doi.org/10.1063/1.4901321.

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31

Tuttle, G., J. Kavanaugh, and S. McCalmont. "(Al,Ga)Sb long-wavelength distributed Bragg reflectors." IEEE Photonics Technology Letters 5, no. 12 (December 1993): 1376–79. http://dx.doi.org/10.1109/68.262546.

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32

Horiacha, M., I. Savchuk, G. Nychyporuk, R. Serkiz, and V. Zaremba. "The YNiIn1-xMx (M= Al, Ga, Sb) systems." Visnyk of the Lviv University. Series Chemistry 59, no. 1 (2018): 67. http://dx.doi.org/10.30970/vch.5901.067.

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33

TOKAYCHUK, I., Ya TOKAYCHUK, and R. GLADYSHEVSKII. "The ternary system Hf–Ga–Sb at 600ºC." Chemistry of Metals and Alloys 6, no. 1/2 (2013): 75–80. http://dx.doi.org/10.30970/cma6.0260.

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34

Raoux, Simone, Anja K. König, Huai-Yu Cheng, Daniele Garbin, Roger W. Cheek, Jean L. Jordan-Sweet, and Matthias Wuttig. "Phase transitions in Ga-Sb phase change alloys." physica status solidi (b) 249, no. 10 (September 17, 2012): 1999–2004. http://dx.doi.org/10.1002/pssb.201200370.

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35

Piao, J. "Surface structures of the (Al,Ga)Sb system." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 2 (March 1990): 276. http://dx.doi.org/10.1116/1.584826.

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36

Geng, Haoran, Guoling Zhang, Zhiming Wang, Yanbo Deng, and Haiou Qin. "Density–temperature properties of Ga–Sb alloy melt." Applied Physics A 98, no. 1 (August 26, 2009): 227–32. http://dx.doi.org/10.1007/s00339-009-5380-2.

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37

Endo, G., K. Kuroda, A. Okamoto, Y. S. Yoo, and S. Horiguchi. "Genotoxicity of Be, Ga, Sb and As compounds." Mutation Research/Environmental Mutagenesis and Related Subjects 252, no. 1 (February 1991): 84–85. http://dx.doi.org/10.1016/0165-1161(91)90257-9.

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38

Guo, Cuiping, Changrong Li, and Zhenmin Du. "Thermodynamic modeling of the Ga–Pt–Sb system." Calphad 52 (March 2016): 169–79. http://dx.doi.org/10.1016/j.calphad.2016.01.001.

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39

Ishida, K., T. Shumiya, T. Nomura, H. Ohtani, and T. Nishizawa. "Phase diagram of the GaAsSb system." Journal of the Less Common Metals 142 (September 1988): 135–44. http://dx.doi.org/10.1016/0022-5088(88)90170-1.

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40

Yu, Teng-Chien, and Robert F. Brebrick. "Thermodynamic analysis of the In-Ga-Sb system." Metallurgical and Materials Transactions A 25, no. 11 (November 1994): 2331–40. http://dx.doi.org/10.1007/bf02648854.

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41

Joshi, K. B., and Nishant N. Patel. "Charge density of Ga x Al1 − x Sb." Pramana 70, no. 2 (February 2008): 295–305. http://dx.doi.org/10.1007/s12043-008-0048-6.

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42

Gomidželović, Lidija, Dragana Živković, Ana Kostov, Aleksandra Mitovski, and Ljubiša Balanović. "Comparative thermodynamic study of Ga–In–Sb system." Journal of Thermal Analysis and Calorimetry 103, no. 3 (December 15, 2010): 1105–9. http://dx.doi.org/10.1007/s10973-010-1203-0.

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43

Luna, E., O. Delorme, L. Cerutti, E. Tournié, J. B. Rodriguez, and A. Trampert. "Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications." Applied Physics Letters 112, no. 15 (April 9, 2018): 151905. http://dx.doi.org/10.1063/1.5024199.

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44

Sestak, J., V. Sestakova, Z. Zivkovic, and D. Zivkovic. "Estimation of activity data for the Ga-Sb, Ga-S and Sb-S systems regarding the doped GaSb semiconductor crystals." Pure and Applied Chemistry 67, no. 11 (January 1, 1995): 1885–90. http://dx.doi.org/10.1351/pac199567111885.

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45

Yamato, Tatsunori, Koji Sueoka, and Takahiro Maeta. "First-Principles Analysis on Interaction between Dopant (Ga, Sb) and Contamination Metal Atoms in Ge Crystals." Solid State Phenomena 205-206 (October 2013): 417–21. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.417.

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The lowest energetic configurations of metal impurities in 4throw (Sc - Zn), 5throw (Y - Cd) and 6throw (Hf - Hg) elements in Ge crystals were determined with density functional theory calculations. It was found that the substitutional site is the lowest energetic configuration for most of the calculated metals in Ge. The most stable configurations of dopant (Ga, Sb) - metal complexes in Ge crystals were also investigated. Following results were obtained. (1) For Ga dopant, 1st neighbor T-site is the most stable for metals in group 3 to 7 elements while substitutional site next to Ga atom is the most stable for metals in group 8 to 12 elements. (2) For Sb dopant, substitutional site next to Sb atom is the most stable for all calculated metals. Binding energies of the interstitial metalMiwith the substitutional dopantDswere obtained by the calculated total energies. The calculated results for Ge were compared with those for Si.

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46

Greene, Andrew, Shailesh Madisetti, Michael Yakimov, Vadim Tokranov, and Serge Oktyabrsky. "Development of III-Sb Technology for p-Channel MOSFETs." International Journal of High Speed Electronics and Systems 23, no. 03n04 (September 2014): 1450015. http://dx.doi.org/10.1142/s0129156414500153.

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Alternative channel materials with superior transport properties over conventional silicon based systems are required for supply voltage scaling in CMOS circuits. Group III- Sb 's are a candidate for high mobility p-channel applications due to a low hole effective mass, large injection velocity in scaled devices and the ability to achieve enhanced hole mobility in strained quantum wells (QW). Multiple challenges in antimonide MOSFET development are assessed and developed technologies were implemented into p-channel MOSFET fabrication with a low thermal processing budget of 350°C. These challenges include growth of “bulk” GaSb and bi-axial compressively strained In x Ga 1-x Sb QW channels on lattice mismatched GaAs substrates, reduction of interface trap state density (Dit) at the III- Sb /high-k oxide interface and avoiding ion implanted source and drain contacts with high temperature activation annealing. A “self-aligned” single mask p-channel MOSFET fabrication process was developed on buried In 0.36 Ga 0.64 Sb QW channels using intermetallic source and drain contacts. The first “gate-last” MOSFET process on In 0.36 Ga 0.64 Sb QW channels with pre-grown epitaxial p++- GaSb contacts is demonstrated. InAs has been proven to be an excellent etch stop layer when using an optimized tetramethylammonium hydroxide (TMAH) etch of p++- GaSb to prevent InGaSb QW damage.

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Güngerich, M., T. Sander, C. Heiliger, M. Czerner, and P. J. Klar. "Local N environment in the dilute nitrides Ga(N,P), Ga(N,As), and Ga(N,Sb)." physica status solidi (b) 250, no. 4 (April 2013): 755–59. http://dx.doi.org/10.1002/pssb.201200458.

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Guo, Jixiao, Qing Jiao, Xiaolong He, Hansong Guo, Jianghao Tong, Zhihang Zhang, Fuchao Jiang, and Guoxiang Wang. "Mid-infrared emission and Judd-Ofelt analysis of Dy3+-doped infrared Ga-Sb-S and Ga-Sb-S-PbI2 chalcohalide glasses." Infrared Physics & Technology 89 (March 2018): 115–19. http://dx.doi.org/10.1016/j.infrared.2018.01.002.

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Rutherford, Naomi H., Alan W. Gordon, Gareth Arnott, and Francis O. Lively. "The Effect of Beef Production System on the Health, Performance, Carcass Characteristics, and Meat Quality of Holstein Bulls." Animals 10, no. 10 (October 19, 2020): 1922. http://dx.doi.org/10.3390/ani10101922.

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The aim of this study was to evaluate the effect of production system on the health, performance, carcass characteristics, and meat quality of autumn born (AB) and spring born (SB) Holstein bulls. The study involved a total of 224 Holstein bulls and was conducted over two years (2017/18, 2018/19). The four production system treatments differed during the grower period and consisted of: (i) grazed with no concentrate supplementation (G), (ii) grazed with 2 kg concentrate supplementation per day (G2), (iii) grazed with ad libitum access to concentrates (GA) and (iv) housed with ad libitum access to concentrates and grass silage (HA). All bulls were finished on ad libitum concentrates and grass silage and were slaughtered at a mean age of 15.5 months. Total grower dry matter intake (DMI) (p < 0.001) and total finishing DMI (p < 0.001) differed between production systems for both AB and SB bulls, with that of GA bulls being the greatest in both cases. Average daily gain (ADG) during the grower period was greatest (p < 0.001) for the HA production system in the AB bulls and the GA and HA production systems for the SB bulls. However, during the finishing period, G bulls had the greatest (p < 0.001) ADG of the AB bulls, while that of the SB bulls was from the G2 production system (p < 0.001). For both AB and SB, bulls on the GA and HA production systems produced heavier cold carcass weights than the G and G2 bulls (p < 0.001). There was no significant difference (p > 0.05) in health, carcass conformation, fat classification, or meat quality between production systems.

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Lu, Kunquan, Qiang Wang, Chenxi Li, Yuren Wang, and Xiumei Chen. "The structures, electronic states and properties in liquid Ga–Sb and In–Sb systems." Journal of Non-Crystalline Solids 312-314 (October 2002): 34–40. http://dx.doi.org/10.1016/s0022-3093(02)01646-0.

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