Relevant bibliographies by topics / GaAs/AlGaAs heterostructures

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  2. Dissertations / Theses
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Academic literature on the topic 'GaAs/AlGaAs heterostructures'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "GaAs/AlGaAs heterostructures"

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Слипченко, С. О., А. А. Подоскин, О. С. Соболева та ін. "Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока". Физика и техника полупроводников 53, № 6 (2019): 816. http://dx.doi.org/10.21883/ftp.2019.06.47735.9064.

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AbstractThe current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-
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Hiruma, K., K. Tomioka, P. Mohan, et al. "Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy." Journal of Nanotechnology 2012 (2012): 1–29. http://dx.doi.org/10.1155/2012/169284.

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The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the〈111〉B or〈111〉A crystallographic orientation from lithography-defined SiO2mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescen
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Давыдова, З. "МОДЕЛИРОВАНИЕ И РАСЧЕТ СПЕКТРА ФОТОЛЮМИНЕСЦЕНЦИИ ГЕТЕРОСТРУКТУРЫ С КВАНТОВОЙ ЯМОЙ НА ПРИМЕРЕ ALGaAS/GaAS". EurasianUnionScientists 6, № 12(81) (2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1163.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds ha
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Ladugin, Maxim A., Irina V. Yarotskaya, Timur A. Bagaev, et al. "Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE." Crystals 9, no. 6 (2019): 305. http://dx.doi.org/10.3390/cryst9060305.

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AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presen
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Давыдова, З. "MODELING AND CALCULATION OF THE PHOTOLUMINESCENCE SPECTRUM OF A HETEROSTRUCTURE WITH A QUANTUM WELL BY THE EXAMPLE OF ALGaAS / GaAS." EurasianUnionScientists 6, no. 12(81) (2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1172.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds ha
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Magno, R., and M. G. Spencer. "Defect assisted tunneling in GaAs/AlGaAs/GaAs heterostructures." Journal of Applied Physics 75, no. 1 (1994): 368–72. http://dx.doi.org/10.1063/1.355860.

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Marsh, A. C. "Electron tunneling in GaAs/AlGaAs heterostructures." IEEE Journal of Quantum Electronics 23, no. 4 (1987): 371–76. http://dx.doi.org/10.1109/jqe.1987.1073352.

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Ko, David Y. K., and J. C. Inkson. "Pressure effects in GaAs/AlGaAs heterostructures." Journal of Applied Physics 65, no. 9 (1989): 3515–18. http://dx.doi.org/10.1063/1.342624.

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Hongpinyo, V., Y. H. Ding, J. Anderson, et al. "Sputtered SiO2 Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures." Advanced Materials Research 31 (November 2007): 33–35. http://dx.doi.org/10.4028/www.scientific.net/amr.31.33.

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We investigate the influence of sputtered silica as annealing cap on the enhancement of intermixing rate of semiconductor quantum nanostructures. After sputtered silica application and subsequent rapid thermal annealing, we observed bandgap shift of over 200 meV with respect to the bandgap of as-grown material from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower temperature than the conventional dielectric cap process with plasma enhanced chemical vapor deposition (PECVD). The results suggest that the sputt
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Zou, Nanzhi, K. A. Chao, and Yu M. Galperin. "Phonon-assisted resonant magnetotunneling in AlGaAs-GaAs-AlGaAs heterostructures." Physical Review Letters 71, no. 11 (1993): 1756–59. http://dx.doi.org/10.1103/physrevlett.71.1756.

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Dissertations / Theses on the topic "GaAs/AlGaAs heterostructures"

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Sharma, Adesh. "Electronic transport in GaAs-AlGaAs heterostructures." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239264.

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Harrell, Ruth Helen. "Induced electron gases in undoped GaAs/AlGaAs heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.625054.

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Allford, Craig. "Resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures." Thesis, Cardiff University, 2016. http://orca.cf.ac.uk/91151/.

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This thesis describes experimental and theoretical research into triple barrier resonant tunnelling structures which are attractive as potential high frequency oscillators in the terahertz frequency range. A lack of practical and coherent radiation emitters in this frequency range has resulted in it being named the \terahertz gap". However resonant tunnelling structures are seen as potential sources for practical solid state emitters which operate in this frequency range at room temperature. A series of symmetric and asymmetric GaAs/Al0:33Ga0:67As triple barrier resonant tunnelling structures
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Reker, Tobias. "Resonant magneto-tunnelling in GaAs/AlGaAs double-barrier heterostructures." Thesis, University of Oxford, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.393758.

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Borsosföldi, Zoltan. "Surface gated quantum dots in shallow GaAs-AlGaAs heterostructures." Thesis, University of Glasgow, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264107.

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FIORE, ANDREA. "Conversion de frequences optiques dans les heterostructures gaas/algaas." Paris 11, 1997. http://www.theses.fr/1997PA112161.

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La conversion de frequence dans les heterostructures gaas/algaas est etudiee. Deux approches differentes sont abordees. La premiere consiste a utiliser les puits quantiques asymetriques ou symetriques sous champ comme milieu non lineaire. La nonlinearite du deuxieme ordre des puits est calculee theoriquement dans le proche infrarouge. La nonlinearite est egalement mesuree par doublage de frequence dans les puits symetriques sous champ. Une application des puits asymetriques est demontree dans un dispositif de doublage de frequence contrapropagatif en guide d'onde, ou le quasi-accord de phase e
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Gupta, Adbhut. "Hydrodynamic and ballistic transport in high-mobility GaAs/AlGaAs heterostructures." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/105062.

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The understanding and study of electron transport in semiconductor systems has been the instigation behind the growth of semiconductor electronics industry which has enabled technological developments that are part of our everyday lives. However, most materials exhibit diffusive electron transport where electrons scatter off disorder (impurities, phonons, defects, etc.) inevitably present in the system, and lose their momentum. Advances in material science have led to the discovery of materials which are essentially disorder-free and exhibit exceptionally high mobilities, enabling transport ph
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Nargelienė, Viktorija. "Research and application of GaAs/AlxGa1-xAs heterostructures for microwave detection." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2013. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2013~D_20131230_081637-29357.

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Spectrum region of millimeter wave is extensively used in various areas: from consumer devices in telecommunication networks, to specific applications in military and diagnostic medicine. Schottky diode is the most commonly used two terminal device in microwave receivers. Although the operational frequency of Schottky diode is reaching the terahertz frequency range it has several drawbacks such as sensitivity dependence on temperature, long-term instability and sensitivity to overloads. These drawbacks impelled one to search new type of devices. Two types of microwave diodes fabricated using G
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Leeb, Tobias [Verfasser]. "MBE-Wachstum von ZnMnSe zur Spininjektion in GaAs-AlGaAs-Heterostrukturen = MBE-growth of ZnMnSe for spininjection into GaAs-AlGaAs-heterostructures / Tobias Leeb." Regensburg : Univ.-Verl. Regensburg, 2009. http://d-nb.info/999400762/34.

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Stuart, R. J. "Magneto-optics of low dimensional systems." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360611.

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Books on the topic "GaAs/AlGaAs heterostructures"

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Zervos, M. Electrical characterisation of modulation doped, GaAs/AlGaAs heterostructures grown by MBE (molecular beam epitaxy). UMIST, 1992.

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Book chapters on the topic "GaAs/AlGaAs heterostructures"

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Döttling, R., and E. Schöll. "Travelling Domains in Modulation-Doped GaAs/AlGaAs Heterostructures." In Negative Differential Resistance and Instabilities in 2-D Semiconductors. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2822-7_12.

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Berroth, M., R. Bosch, and V. Hurm. "Frequency Dependent CV Measurements of GaAs/AlGaAs Heterostructures." In ESSDERC ’89. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_130.

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Kalinka, G., F. Kuchar, R. Meisels, et al. "Cyclotron Resonance in the 2D Hole Gas of GaAs/AlGaAs Heterostructures." In Springer Series in Solid-State Sciences. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84408-9_83.

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Höpfel, Ralph A., E. Gornik, and G. Weimann. "FIR-Emission from Free Carrier Plasma in GaAs/AlGaAs Heterostructures." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_129.

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Sakaki, H. "Transport in Two-Dimensional Electron System in GaAs/AlGaAs Heterostructures." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_350.

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Brinkop, F., C. Dahl, J. P. Kotthaus, G. Weimann, and W. Schlapp. "Microwave Conductivity of Laterally Confined Electron Systems in AlGaAs/GaAs Heterostructures." In Springer Series in Solid-State Sciences. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84408-9_51.

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Seredin, Pavel, Anton Glotov, Evelina Domashevskaya, et al. "XRD and Raman Study of Low Temperature AlGaAs/GaAs (100) Heterostructures." In NATO Science for Peace and Security Series B: Physics and Biophysics. Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-3807-4_18.

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Perry, C. H., J. M. Worlock, M. C. Smith, and A. Petrou. "Magneto-Luminescence in Modulation-Doped AlGaAs-GaAs Multiple Quantum Well Heterostructures." In Springer Series in Solid-State Sciences. Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_30.

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Berg, A., and K. Klitzing. "Electron Spin Resonance and Nuclear Spin Relaxation in GaAs/AlgaAs Heterostructures." In Optical Phenomena in Semiconductor Structures of Reduced Dimensions. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1912-2_2.

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Dobers, M., F. Malcher, G. Lommer, et al. "Electron Spin Resonance in the Two-Dimensional Electron Gas of GaAs-AlGaAs Heterostructures." In High Magnetic Fields in Semiconductor Physics II. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_59.

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Conference papers on the topic "GaAs/AlGaAs heterostructures"

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Ashkinadze, B. A., Elisha Cohen, and Arza Ron. "Dimensional magnetoplasma resonance in GaAs/AlGaAs heterostructures." In SPIE Proceedings, edited by Zhores I. Alferov and Leo Esaki. SPIE, 2002. http://dx.doi.org/10.1117/12.514497.

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Leo, Karl. "Ultrafast dynamics of wavepackets in GaAs/AlGaAs heterostructures." In Semiconductors '92, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1992. http://dx.doi.org/10.1117/12.142551.

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Gupta, K. Das, W. Y. Mak, F. Sfigakis, et al. "Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666389.

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Monmayrant, Antoine, Olivier Gauthier-Lafaye, Sophie Bonnefont, et al. "Random laser in totally disordered 2D GaAs/AlGaAs heterostructures." In Quantum Electronics and Laser Science Conference. OSA, 2012. http://dx.doi.org/10.1364/qels.2012.qf1h.7.

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Drichko, I. L., A. M. Dyakonov, I. Yu Smirnov, and A. I. Toropov. "Metal-Insulator Transition in GaAs/AlGaAs Heterostructures: Acoustic Study." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730007.

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Cola, A., F. Quaranta, B. Nabet, and A. Cataldo. "Photodetector with Internal Aiding Field Based-on GaAs/AlGaAs Heterostructures." In 32nd European Solid-State Device Research Conference. IEEE, 2002. http://dx.doi.org/10.1109/essderc.2002.195016.

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Dhillon, S. S., A. G. Davies, R. Harrell, et al. "Terahertz (THz) electro-luminescence from AlGaAs-GaAs quantum cascade heterostructures." In CLEO 2001. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest. IEEE, 2001. http://dx.doi.org/10.1109/cleo.2001.948073.

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Aziziyan, Mohammad R., Walid M. Hassen, and Jan J. Dubowski. "Electrically biased GaAs/AlGaAs heterostructures for enhanced detection of bacteria." In SPIE LASE, edited by Andrei V. Kabashin, David B. Geohegan, and Jan J. Dubowski. SPIE, 2016. http://dx.doi.org/10.1117/12.2219856.

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Gyoda, Y., J. Hayafuji, M. Yarimizu, W. Terui, S. Sugahara, and H. Munekata. "Spin Transport Across Indirect Gap Barriers in GaAs-AlGaAs Heterostructures." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.c-3-4.

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Fontein, P. F., P. Hendriks, J. Wolter, A. Kucernak, R. Peat, and D. E. Williams. "Topography Of GaAs/AlgaAs Heterostructures Using The Lateral Photo Effect." In 1988 International Congress on Optical Science and Engineering. SPIE, 1989. http://dx.doi.org/10.1117/12.950344.

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Reports on the topic "GaAs/AlGaAs heterostructures"

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Pepper, Michael. Single-Photon Detection Using High Frequency Acoustic Waves on GaAs/AlGaAs Heterostructures. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada521514.

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Tracy, Lisa A., John L. Reno, and Terry W. Hargett. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures. Office of Scientific and Technical Information (OSTI), 2015. http://dx.doi.org/10.2172/1221866.

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Mani, Ramesh G. Final Report: Magnetotransport studies of low dimensional electron systems based on GaAs/AlGaAs heterostructures and graphene. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1494586.

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Simmons, J. A., H. C. Chui, N. E. Harff, B. E. Hammons, R. R. Du, and M. A. Zudov. Composite fermions in 2 {times} 10{sup 6} cm{sup 2}/Vs mobility AlGaAs/GaAs heterostructures grown by MOCVD. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/270799.

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