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Dissertations / Theses on the topic 'GaAs/AlGaAs heterostructures'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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1

Sharma, Adesh. "Electronic transport in GaAs-AlGaAs heterostructures." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239264.

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2

Harrell, Ruth Helen. "Induced electron gases in undoped GaAs/AlGaAs heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.625054.

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3

Allford, Craig. "Resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures." Thesis, Cardiff University, 2016. http://orca.cf.ac.uk/91151/.

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This thesis describes experimental and theoretical research into triple barrier resonant tunnelling structures which are attractive as potential high frequency oscillators in the terahertz frequency range. A lack of practical and coherent radiation emitters in this frequency range has resulted in it being named the \terahertz gap". However resonant tunnelling structures are seen as potential sources for practical solid state emitters which operate in this frequency range at room temperature. A series of symmetric and asymmetric GaAs/Al0:33Ga0:67As triple barrier resonant tunnelling structures

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4

Reker, Tobias. "Resonant magneto-tunnelling in GaAs/AlGaAs double-barrier heterostructures." Thesis, University of Oxford, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.393758.

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5

BorsosfoÌˆldi, Zoltan. "Surface gated quantum dots in shallow GaAs-AlGaAs heterostructures." Thesis, University of Glasgow, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264107.

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6

FIORE, ANDREA. "Conversion de frequences optiques dans les heterostructures gaas/algaas." Paris 11, 1997. http://www.theses.fr/1997PA112161.

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La conversion de frequence dans les heterostructures gaas/algaas est etudiee. Deux approches differentes sont abordees. La premiere consiste a utiliser les puits quantiques asymetriques ou symetriques sous champ comme milieu non lineaire. La nonlinearite du deuxieme ordre des puits est calculee theoriquement dans le proche infrarouge. La nonlinearite est egalement mesuree par doublage de frequence dans les puits symetriques sous champ. Une application des puits asymetriques est demontree dans un dispositif de doublage de frequence contrapropagatif en guide d'onde, ou le quasi-accord de phase e

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7

Gupta, Adbhut. "Hydrodynamic and ballistic transport in high-mobility GaAs/AlGaAs heterostructures." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/105062.

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The understanding and study of electron transport in semiconductor systems has been the instigation behind the growth of semiconductor electronics industry which has enabled technological developments that are part of our everyday lives. However, most materials exhibit diffusive electron transport where electrons scatter off disorder (impurities, phonons, defects, etc.) inevitably present in the system, and lose their momentum. Advances in material science have led to the discovery of materials which are essentially disorder-free and exhibit exceptionally high mobilities, enabling transport ph

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8

Nargelienė, Viktorija. "Research and application of GaAs/AlxGa1-xAs heterostructures for microwave detection." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2013. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2013~D_20131230_081637-29357.

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Spectrum region of millimeter wave is extensively used in various areas: from consumer devices in telecommunication networks, to specific applications in military and diagnostic medicine. Schottky diode is the most commonly used two terminal device in microwave receivers. Although the operational frequency of Schottky diode is reaching the terahertz frequency range it has several drawbacks such as sensitivity dependence on temperature, long-term instability and sensitivity to overloads. These drawbacks impelled one to search new type of devices. Two types of microwave diodes fabricated using G

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9

Leeb, Tobias [Verfasser]. "MBE-Wachstum von ZnMnSe zur Spininjektion in GaAs-AlGaAs-Heterostrukturen = MBE-growth of ZnMnSe for spininjection into GaAs-AlGaAs-heterostructures / Tobias Leeb." Regensburg : Univ.-Verl. Regensburg, 2009. http://d-nb.info/999400762/34.

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10

Stuart, R. J. "Magneto-optics of low dimensional systems." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360611.

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11

Lenzmann, Björn. "Advancements in optically detected nuclear magnetic resonance applied to nanoscopic GaAs/AlGaAs heterostructures." [S.l.] : [s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=966150988.

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12

Deborde, Jean-Laurent. "Lateral electron tunneling spectroscopy between low-dimensional electron systems in GaAs,AlGaAs heterostructures." Tönning Lübeck Marburg Der Andere Verl, 2009. http://d-nb.info/995773491/04.

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13

Keogh, James Andrew Christian. "Fabrication and measurement of closely-spaced electron-hole bilayers in GaAs/AlGaAs heterostructures." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.615273.

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14

Zarem, Hal Yariv Amnon. "Investigations of quantum wires, carrier diffusion lengths, and carrier lifetimes in GaAs/AlGaAs heterostructures /." Diss., Pasadena, Calif. : California Institute of Technology, 1990. http://resolver.caltech.edu/CaltechETD:etd-11092007-090251.

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15

YANG, DANDAN. "Transitions intrabandes des heterostructures a puits quantiques gaas/algaas et le couplage inter-intrabande." Paris 11, 1991. http://www.theses.fr/1991PA112121.

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Ce travail porte sur l'etude des transitions intrabandes dans des heterostructures a puits quantiques du type gaas/algaas. Apres une revue historique, le chapitre i montre un modele simple de calcul des niveaux d'energie intrabandes. L'expression du moment dipolaire ainsi que les regles de selection associees aux transitions intrabandes est aussi etablie. Le chapitre ii est consacre aux structures a puits quantiques dopees. Dans un premier temps, le modele de calcul des niveaux d'energie intrabandes est complete pour prendre en compte la courbure de bande et l'ecrantage resonant des transition

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16

Siddiqui, Aleem 1977. "Use of time domain capacitance spectroscopy in the study of tunneling into two-dimensional GaAs/AlGaAs heterostructures with an in-plane magnetic field." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/87885.

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17

Nazemi, Elnaz. "Photonic monitoring of biological activities of bacteria immobilized on biofunctionalized surfaces of quantum semiconductors." Thèse, Université de Sherbrooke, 2017. http://hdl.handle.net/11143/9887.

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Le suivi de la viabilitié, la croissance et le métabolisme cellulaire des bactéries peut contribuer de manière significative au diagnostic précoce de la maladie, mais peut aussi aider à améliorer le rendement des produits bactériens dans des expériences industrielle ou à petite echelle. Les méthodes conventionnelles utilisées pour l'étude de la sensibilité des bactéries aux antibiotiques sont basées principalement sur la culture, une technique qui prend au moins 12 heures pour rendre un résultat. Ce retard conduit au surtraitement d'un large éventail d'infections par des antibiotiques à large

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18

Gompertz, Martin. "Studies of electron tunnelling low-dimensional GaAs/(AlGa)As heterostructures." Thesis, University of Nottingham, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285720.

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19

Song, Junghui. "Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250296506.

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20

Nogaret, Alain. "Etude comparée du transport par effet tunnel résonnant dans les hétérostructures semiconductrices de type I et II en présence de pression hydrostatique et de fort champ magnétique." Toulouse, INSA, 1993. http://www.theses.fr/1993ISAT0037.

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Nous etudions la combinaison de l'effet tunnel resonnant avec l'effet tunnel interbande dans les heterostructures presentant un alignement de type ii. Dans les heterostructures de type i, la quantification magnetique montre qu'un electron avec une importante energie cinetique transverse conserve son energie plutot que son vecteur d'onde transverse, la pression hydrostatique met en evidence un pic de courant extraordinaire que nous attribuons a la formation de niveaux x lies dans les barrieres alas, le calcul clarifie la contribution des modes de phonons lo locaux au courant vallee. Nous exposo

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21

Zarem, Hal. "Investigations of quantum wires, carrier diffusion lengths, and carrier lifetimes in GaAs/AlGaAs heterostructures." Thesis, 1990. https://thesis.library.caltech.edu/4479/1/Zarem_h_1990.pdf.

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NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. Nanometer scale wire structures are fabricated by selective disorder of a GaAs/AlGaAs quantum well. These structures are investigated by cathodoluminescence (CL). Spectrally resolved CL images of the structures as well as local CL spectra of the structures are resented. The effects of fabricational variations on quantum wire laser gain spectra and performance are discussed. A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented.

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22

Liu, Chieh-Wen, and 劉玠汶. "Electronic Transport Properties in Monolayer Epitaxial Graphene on SiC and Two-dimensional GaAs/AlGaAs Heterostructures." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/j3mcrn.

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博士<br>國立臺灣大學<br>應用物理研究所<br>105<br>Two-dimensional (2D) materials provide an ideal platform for probing rich physical phenomena at the quantum level. This dissertation focuses on low-temperature magneto-transport measurements of monolayer epitaxial graphene grown on SiC and the GaAs-based 2D electron system. The experimental results include three topics. In the first study, I show how electron-electron interactions play a role in epitaxial graphene at low temperatures (T) and study the T dependence of carrier density based on the classical Hall effect and Shubnikov-de Haas measurements. This

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23

Lenzmann, Björn [Verfasser]. "Advancements in optically detected nuclear magnetic resonance applied to nanoscopic GaAs/AlGaAs heterostructures / by Björn Lenzmann." 2001. http://d-nb.info/966150988/34.

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24

Liu, Han-Chun. "Polarization Rotation Study of Microwave Induced Magnetoresistance Oscillations in the GaAs/AlGaAs 2D System." 2016. http://scholarworks.gsu.edu/phy_astr_diss/90.

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Previous studies have demonstrated the sensitivity of the amplitude of the microwave radiation-induced magnetoresistance oscillations to the microwave polarization. These studies have also shown that there exists a phase shift in the linear polarization angle dependence. But the physical origin of this phase shift is still unclear. Therefore, the first part of this dissertation analyzes the phase shift by averaging over other small contributions, when those contributions are smaller than experimental uncertainties. The analysis indicates nontrivial frequency dependence of the phase shift. The

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25

JIANG, WEN-XI, and 江文溪. "Buried heterostructure AlGaAs/GaAs lasers on SI GaAs substrates." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/75174655902807403272.

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26

Wang, Sheng Fu, and 王聖富. "Electron Spin Resonance on GaAs/AlGaAs Heterostructure." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/11561011562640428252.

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27

Li, Chue-Cheng, and 李居橙. "Investigation of GaAs/AlGaAs Double-heterostructure Optoelectronic Switch." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/00480213943305822609.

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碩士<br>國立成功大學<br>電機工程研究所<br>84<br>In this article,GaAs/AlGaAs doulble-heterostructure optoelectronic switches (DOES) prepared by molecular beam epitaxy (MBE ) have been fabricated and charac- terized. The electrical and optical properties of the two-terminal,three- terminal switches are investigated by the carrier injection, voltage biase and light inje- ction. According to the results , the influence of the third-electrode position and anode area on the current control efficiency is addre

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28

Cheng, C. C., and 鄭錦泉. "Investigation of Functional AlGaAs/InGaAs/GaAs Heterostructure-Emittter and Heterostructure-Base Transistors (HEHBT'S)." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/25374839316439500836.

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碩士<br>國立成功大學<br>電機工程研究所<br>85<br>In this thesis, the functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base bipolar transistors (HEHBT's) with an abrupt or a graded confinement layer are fabricated and demonstrated. Due to the insertion of InGaAs quantum well at E-B junction, the discontinuity of valence band can be enchanced and the injection efficiency can be increased. The current gain of 280 and 120 are obtained, respectively. The optimum design of the n-GaAs emitter can eliminate the potential spike and get the low offset voltage of 100 mV. From the theoretical

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29

Chen, Zheng-Ting, and 陳政廷. "Fabrication and Characterization of InAs/GaAs/AlGaAs Heterostructure Q.D. Laser." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/97437058085799124369.

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碩士<br>國立交通大學<br>電子工程系<br>89<br>We have successfully fabricated the InAs/GaAs/AlGaAs heterostructure Q.D. lasers with ground state lasing . Comparing with Quantum well lasers , it has smaller threshold current density and higher characteristic temperature . In suitable epitaxy condition , We can make a small size , cheap , low power consuming , low driving current , low temperature dependence and good reliability communication light emitting device with 1.3um . In the experiment , We have developed a new process with insulating oxidation layers that sandwiching the active layer . Th

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30

ZENG, JIAN-XIN, and 曾堅信. "Fabrication and characterization of GaAs/AlGaAs graded-index separate confinement heterostructure laser." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/16844753416293751960.

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31

Huang, Yuan-Wei, and 黃源尉. "Effect of Gate Metal on AlGaAs/GaAs Doped-Channel Heterostructure Field Effect Transistors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/14761829818596801500.

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碩士<br>國立東華大學<br>材料科學與工程學系<br>96<br>In this thesis, we propose AlGaAs/GaAs Doped-Channel Heterostructure FETs (DCFETs) grown by metalorganic chemical- vapor deposition (MOCVD). The DCFETs with different gate alloys, including Au and Pt/Au. Moreover, using the (NH4)2x solution to from the AlGaAs surface passivation are studied and demonstrated. For AlGaAs material, the surface recombination velocity and surface states are reduced by sulfur passivation. Hence, the well-behaved interfaces between the epitaxial semiconductor and Schottky metals can be obtained. The gate dimensions of DCFETs are 1.0

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32

Ho, Guang-Tzer, and 何光澤. "The design and fabrication of InGaAs/GaAs and AlGaAs/InGaAs heterostructure junction field effect transistor." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/63135915582187665277.

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碩士<br>國立中央大學<br>電機工程學系<br>85<br>In our research,we derive an equation of the relation between the depletion width and the bias of the pn junction of heterostructure JFET to determine the threshold voltage of the device and prove it by experiments. We fabricated two sets of HJFET,one is InGaAs/GaAs JFET and the other is AlGaAs/InGaAs JFET. In the former set,we demonstrate the good device linearity of buried channel doping =1x10^18cm^-3 by experiments and 2-D simulations. And its curren

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33

Yeh, Hsin-Da, and 葉欣達. "Insulator-Quantum Hall Conductor Transitions in a Gated GaAs/AlGaAs Heterostructure at Low Magnetic Field." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/04972779253522894497.

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34

WANG, CHUNG LIN, and 王中林. "Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/03884082800595415626.

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35

Wang, Chung Lin, and 王中林. "Study for vacancy-induced layer disordering of AlGaAs-GaAs quantum well heterostructure that utilizes SiO2 cap." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/79093051920841389625.

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36

Zhang, Zhi-Yao, and 張智堯. "Microwave-modulated Transport of Two-dimensional Electron Gas in GaAs/AlGaAs Heterostructure &Electrical Measurements of an AlXGa1-XN/GaN High Electron Mobility Transistor Structure Grown on Si." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/29485306475438067354.

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碩士<br>國立臺灣大學<br>物理研究所<br>95<br>This work is composed of two parts including measurements associated with magnetotransport of two-dimensional electron gas (2DEG) in semiconductor heterostructures, which provides substantial information on the transport phenomena in heterostructures. We reported the photoconductivity of two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructure. The signal we observed was the magnetoresistivity under the microwave illumination (12dBm; 20GHz~30GHz). Comparing with the results of the standard magnetoresistivity measurements we found that the effect induce

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37

Zhang, Zhi-Yao. "Microwave-modulated Transport of Two-dimensional Electron Gas in GaAs/AlGaAs Heterostructure & Electrical Measurements of an AlXGa1-XN/GaN High Electron Mobility Transistor Structure Grown on Si." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-0407200714211500.

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38

Aamir, Mohammed Ali. "Impact of Disorder and Topology in Two Dimensional Systems at Low Carrier Densities." Thesis, 2016. http://hdl.handle.net/2005/3118.

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Two dimensional (2D) systems with low carrier density is an outstanding platform for studying a wide spectrum of physics. These include both classical and quantum eﬀects, arising from disorder, Coulomb interactions and even non-trivial topological properties of band-structure. In this thesis, we have explored the physics at low carrier number density in GaAs/AlGaAs heterostructure and bilayer graphene, by investigating in a larger phase space using a variety of electrical measurement tools. A two-dimensional electron system (2DES) formed in a GaAs/AlGaAs heterostructure oﬀers an avenue to bui

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