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Journal articles on the topic 'GaAs/AlGaAs heterostructures'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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1

Слипченко, С. О., А. А. Подоскин, О. С. Соболева та ін. "Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока". Физика и техника полупроводников 53, № 6 (2019): 816. http://dx.doi.org/10.21883/ftp.2019.06.47735.9064.

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AbstractThe current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-

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2

Hiruma, K., K. Tomioka, P. Mohan, et al. "Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy." Journal of Nanotechnology 2012 (2012): 1–29. http://dx.doi.org/10.1155/2012/169284.

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The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the〈111〉B or〈111〉A crystallographic orientation from lithography-defined SiO2mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescen

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3

Давыдова, З. "МОДЕЛИРОВАНИЕ И РАСЧЕТ СПЕКТРА ФОТОЛЮМИНЕСЦЕНЦИИ ГЕТЕРОСТРУКТУРЫ С КВАНТОВОЙ ЯМОЙ НА ПРИМЕРЕ ALGaAS/GaAS". EurasianUnionScientists 6, № 12(81) (2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1163.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds ha

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4

Ladugin, Maxim A., Irina V. Yarotskaya, Timur A. Bagaev, et al. "Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE." Crystals 9, no. 6 (2019): 305. http://dx.doi.org/10.3390/cryst9060305.

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AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presen

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5

Давыдова, З. "MODELING AND CALCULATION OF THE PHOTOLUMINESCENCE SPECTRUM OF A HETEROSTRUCTURE WITH A QUANTUM WELL BY THE EXAMPLE OF ALGaAS / GaAS." EurasianUnionScientists 6, no. 12(81) (2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1172.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds ha

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6

Magno, R., and M. G. Spencer. "Defect assisted tunneling in GaAs/AlGaAs/GaAs heterostructures." Journal of Applied Physics 75, no. 1 (1994): 368–72. http://dx.doi.org/10.1063/1.355860.

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7

Marsh, A. C. "Electron tunneling in GaAs/AlGaAs heterostructures." IEEE Journal of Quantum Electronics 23, no. 4 (1987): 371–76. http://dx.doi.org/10.1109/jqe.1987.1073352.

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8

Ko, David Y. K., and J. C. Inkson. "Pressure effects in GaAs/AlGaAs heterostructures." Journal of Applied Physics 65, no. 9 (1989): 3515–18. http://dx.doi.org/10.1063/1.342624.

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9

Hongpinyo, V., Y. H. Ding, J. Anderson, et al. "Sputtered SiO₂ Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures." Advanced Materials Research 31 (November 2007): 33–35. http://dx.doi.org/10.4028/www.scientific.net/amr.31.33.

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We investigate the influence of sputtered silica as annealing cap on the enhancement of intermixing rate of semiconductor quantum nanostructures. After sputtered silica application and subsequent rapid thermal annealing, we observed bandgap shift of over 200 meV with respect to the bandgap of as-grown material from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower temperature than the conventional dielectric cap process with plasma enhanced chemical vapor deposition (PECVD). The results suggest that the sputt

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10

Zou, Nanzhi, K. A. Chao, and Yu M. Galperin. "Phonon-assisted resonant magnetotunneling in AlGaAs-GaAs-AlGaAs heterostructures." Physical Review Letters 71, no. 11 (1993): 1756–59. http://dx.doi.org/10.1103/physrevlett.71.1756.

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11

Малевская, А. В., Н. А. Калюжный, Д. А. Малевский та ін. "Инфракрасные (850 нм) светодиоды с множественными квантовыми ямами InGaAs и "тыльным" отражателем". Физика и техника полупроводников 55, № 8 (2021): 699. http://dx.doi.org/10.21883/ftp.2021.08.51143.9665.

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Investigation of IR light emitting diodes (wavelength 850 nm) based on heterostructures AlGaAs/GaAs with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate GaAs and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector has been optimized and the increase of the IR radiation reflection coefficient up to 92-93% has been achieved. Light-emitting diodes with the external quantu

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12

Požela,, J., K. Požela,, A. Sužiedėlis,, V. Jucienė,, and V. Petkun. "Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures." Acta Physica Polonica A 113, no. 3 (2008): 989–92. http://dx.doi.org/10.12693/aphyspola.113.989.

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13

GOREV, NIKOLAI B., INNA F. KODZHESPIROVA, EVGENY N. PRIVALOV, NINA KHUCHUA, LEVAN KHVEDELIDZE, and MICHAEL S. SHUR. "PHOTOCAPACITANCE OF SELECTIVELY DOPED AlGaAs/GaAs HETEROSTRUCTURES CONTAINING DEEP TRAPS." International Journal of High Speed Electronics and Systems 17, no. 01 (2007): 189–92. http://dx.doi.org/10.1142/s0129156407004412.

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The results of calculations of the low-frequency and the high-frequency barrier capacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps in the AlGaAs layer are presented. The calculations are done for the samples in the dark and under extrinsic illumination. It is shown that the high-frequency photocapacitance of these structures exhibits a positive peak, and the low-frequency photocapacitance has a positive peak followed by a negative valley. The underlying physical mechanisms are discussed.

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14

Arbenina, V. V., I. V. Budkin, and A. A. Marmalyuk. "Multilayer contacts to AlGaAs/GaAs photodetector heterostructures." Inorganic Materials 43, no. 3 (2007): 221–26. http://dx.doi.org/10.1134/s0020168507030028.

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15

Reemtsma, J. ‐H, S. Kugler, K. Heime, W. Schlapp, and G. Weimann. "Deep levels inp‐type AlGaAs/GaAs heterostructures." Journal of Applied Physics 65, no. 7 (1989): 2867–69. http://dx.doi.org/10.1063/1.342730.

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16

Kulik, L. V., A. V. Gorbunov, A. S. Zhuravlev, V. B. Timofeev, and I. V. Kukushkin. "2D magnetofermionic condensate in GaAs/AlGaAs heterostructures." Low Temperature Physics 43, no. 8 (2017): 936–41. http://dx.doi.org/10.1063/1.5001293.

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17

Van Hoof, C., D. J. Arent, K. Deneffe, J. De Boeck, and G. Borghs. "Photomodulated absorption spectroscopy on AlGaAs‐GaAs heterostructures." Journal of Applied Physics 64, no. 8 (1988): 4233–35. http://dx.doi.org/10.1063/1.341290.

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18

Zhao, Q. X., J. P. Berman, P. O. Holtz, et al. "Radiative recombination in doped AlGaAs/GaAs heterostructures." Semiconductor Science and Technology 5, no. 8 (1990): 884–89. http://dx.doi.org/10.1088/0268-1242/5/8/014.

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19

D'Iorio, M., A. S. Sachrajda, D. Landheer, et al. "Narrow channel breakdown in GaAs/AlGaAs Heterostructures." Surface Science 196, no. 1-3 (1988): 165–70. http://dx.doi.org/10.1016/0039-6028(88)90680-2.

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20

Petersen, C. L., M. R. Frei, and S. A. Lyon. "Hot electron electroluminescence in AlGaAs/GaAs heterostructures." Solid-State Electronics 32, no. 12 (1989): 1919–23. http://dx.doi.org/10.1016/0038-1101(89)90336-5.

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21

Taboryski, R., P. E. Lindelof, and E. Veje. "Bombardment-induced modification of GaAs/AlGaAs heterostructures." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 48, no. 1-4 (1990): 482–84. http://dx.doi.org/10.1016/0168-583x(90)90166-r.

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22

Gornik, E., W. Boxleitner, V. Roßkopf, M. Hauser, C. Wirner, and G. Weimann. "Smith Purcell effect in GaAs/AlGaAs heterostructures." Superlattices and Microstructures 15, no. 4 (1994): 399–404. http://dx.doi.org/10.1006/spmi.1994.1077.

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23

Кулеев, И. И. "Влияние фокусировки фононов на теплопроводность гетероструктур GaAs/AlGaAs при низких температурах". Физика твердого тела 61, № 3 (2019): 426. http://dx.doi.org/10.21883/ftt.2019.03.47231.271.

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AbstractThe effect of the anisotropy of elastic properties on the thermal conductivity of GaAs/AlGaAs heterostructures at low temperatures is investigated. The effect of phonon focusing on the anisotropy of the thermal conductivity is analyzed. The parameters of the specular reflection of phonons from the boundaries of the heterostructures, which characterize the heat flux in the Knudsen mode of the phonon gas flow, are determined. The angular dependences of the mean free paths of phonons of different polarizations, which determine the thermal conductivity anisotropy of heterostructures with o

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24

Слипченко, С. О., А. А. Подоскин, О. С. Соболева та ін. "Исследования процессов транспорта носителей заряда в изотипных гетероструктурах типа n-=SUP=-+-=/SUP=--GaAs/n-=SUP=-0-=/SUP=--GaAs/n-=SUP=-+-=/SUP=--GaAs с тонким широкозонным барьером AlGaAs". Физика и техника полупроводников 54, № 5 (2020): 452. http://dx.doi.org/10.21883/ftp.2020.05.49258.9344.

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Abstract Experimental studies of n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs isotype heterostructures with a 100-nm-thick wide-gap N ^0-AlGaAs barrier situated in the n ^0-GaAs region are carried out. It is shown that the current–voltage characteristic of the structures under study has a negative-differential-resistance (NDR) portion, with the transition to this region occurring with a time delay that may reach tens of nanoseconds. It is found that operation in the NDR region is associated with the onset of impact-ionization process. Numerical analysis in terms of the energy-balance model demonstrated tha

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25

Fink, Th, and R. M. Osgood. "Light‐Induced Selective Etching of GaAs in AlGaAs / GaAs Heterostructures." Journal of The Electrochemical Society 140, no. 4 (1993): L73—L74. http://dx.doi.org/10.1149/1.2056253.

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26

Magno, R., and M. G. Spencer. "Electron tunneling spectroscopy and defects in GaAs/AlGaAs/GaAs heterostructures." Journal of Applied Physics 72, no. 11 (1992): 5333–36. http://dx.doi.org/10.1063/1.351968.

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27

Chin, Albert, Paul Martin, Pin Ho, Jim Ballingall, Tan‐hua Yu, and John Mazurowski. "High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well." Applied Physics Letters 59, no. 15 (1991): 1899–901. http://dx.doi.org/10.1063/1.106182.

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28

Gray, M. L., J. D. Yoder, and A. D. Brotman. "Sidegating characteristics of AlGaAs/GaAs heterostructures with varied AlGaAs spacer layers." Journal of Applied Physics 69, no. 2 (1991): 830–35. http://dx.doi.org/10.1063/1.347317.

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29

Christanell, R., and R. A. Höpfel. "Time‐resolved luminescence from the AlGaAs layer of AlGaAs/GaAs heterostructures." Journal of Applied Physics 66, no. 10 (1989): 4827–31. http://dx.doi.org/10.1063/1.343798.

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30

Blokhin, E. E., D. A. Arustamyan, and L. M. Goncharova. "Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs." Solid State Phenomena 284 (October 2018): 182–87. http://dx.doi.org/10.4028/www.scientific.net/ssp.284.182.

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In this paper we present the results of investigation of heterostructures with an array of InAs quantum dots grown on GaAs substrates with GaAs and AlGaAs front barriers for high-speed near-IR photodetectors. The thickness of the barrier layers did not exceed 30 nm. It is shown that the ion-beam deposition method makes it possible to grow quantum dots with lateral dimensions up to 30 nm and 15 nm height. The spectral dependences of the external quantum efficiency and dark current-voltage characteristics are investigated.

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31

Blokhin, E. E., A. S. Pashchenko, L. S. Lunin, S. N. Chebotarev, and D. L. Alfimova. "THE STUDY OF InAs/GaAs HETEROSTRUCTURES WITH POTENTIAL BARRIERS AlGaAs." Science in the South of Russia 13, no. 1 (2017): 11–17. http://dx.doi.org/10.23885/2500-0640-2017-13-1-11-17.

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32

Dekorsy, Thomas, Gyu Cheon Cho, and Heinrich Kurz. "Coherent Phonons in Semiconductors and Semiconductor Heterostructures." Journal of Nonlinear Optical Physics & Materials 07, no. 02 (1998): 201–13. http://dx.doi.org/10.1142/s021886359800017x.

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The impulsive excitation and phase-sensitive detection of coherent phonons enable the study of dynamical properties of the lattice. In pump-probe experiments with femtosecond time resolution the amplitude and phase of the coherent lattice motion can be detected with high sensitivity. Especially in semiconductors and semiconductor heterostructures, where a coherent phonon mode and free carriers are exited at the same time, important information about the carrier-phonon system far away from equilibrium is obtained. In bulk GaAs coherent plasmon-phonon modes can be traced via the associated macro

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33

Гаврина, П. С., О. С. Соболева, А. А. Подоскин та ін. "Экспериментальные исследования динамики распространения включенного состояния низковольтных лазеров-тиристоров на основе гетероструктур AlGaAs/InGaAs/GaAs". Письма в журнал технической физики 45, № 8 (2019): 7. http://dx.doi.org/10.21883/pjtf.2019.08.47612.17662.

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A technique is proposed for determining the spatio-temporal dynamics of current in semiconductor heterostructures. This technique is based on the modulation of external radiation during passage through the crystal under study. Approbation of the technique was carried out on semiconductor laser-thyristor based on AlGaAs/ InGaAs/GaAs heterostructures. The experimental results are in a good qualitative agreement with previous measurements of the spatio-temporal dynamics in the laser-thyristor.

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34

CHENG WEN-QIN, LIU SHUANG, ZHOU JUN-MING, LIU YU-LONG, and ZHU KE. "PHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES." Acta Physica Sinica 42, no. 9 (1993): 1529. http://dx.doi.org/10.7498/aps.42.1529.

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35

Melkadze, R., N. Khuchua, Z. Tchakhnakia, et al. "Investigation of MBE grown GaAs/AlGaAs/InGaAs heterostructures." Materials Science and Engineering: B 80, no. 1-3 (2001): 262–65. http://dx.doi.org/10.1016/s0921-5107(00)00651-6.

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36

Ghita, R. V., and Fl Iova. "Photoluminescence of anodic oxide on AlGaAs/GaAs heterostructures." Optical Materials 16, no. 3 (2001): 377–79. http://dx.doi.org/10.1016/s0925-3467(00)00097-5.

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37

Borisov, V. I., V. A. Sablikov, A. I. Chmil’, and I. V. Borisova. "Origin of current instability in GaAs/AlGaAs heterostructures." Physica E: Low-dimensional Systems and Nanostructures 8, no. 4 (2000): 376–86. http://dx.doi.org/10.1016/s1386-9477(99)00253-2.

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38

CAVALLINI, A. "Deep levels in MBE grown AlGaAs/GaAs heterostructures." Microelectronic Engineering 73-74 (June 2004): 954–59. http://dx.doi.org/10.1016/s0167-9317(04)00250-3.

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39

Saku, Tadashi, Yoshiji Horikoshi, and Seigo Tarucha. "High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures." Japanese Journal of Applied Physics 33, Part 1, No. 9A (1994): 4837–42. http://dx.doi.org/10.1143/jjap.33.4837.

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40

Walukiewicz, Wladyslaw. "Hole mobility in modulation-doped heterostructures: GaAs-AlGaAs." Physical Review B 31, no. 8 (1985): 5557–60. http://dx.doi.org/10.1103/physrevb.31.5557.

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41

Pan, N., X. L. Zheng, H. Hendriks, and J. Carter. "Photoreflectance characterization of AlGaAs/GaAs modulation‐doped heterostructures." Journal of Applied Physics 68, no. 5 (1990): 2355–60. http://dx.doi.org/10.1063/1.346544.

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42

Zhuchenko, Z. Ya. "Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures." Semiconductor Physics, Quantum Electronics and Optoelectronics 2, no. 3 (1999): 103–10. http://dx.doi.org/10.15407/spqeo2.03.103.

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43

Bury, P., V. W. Rampton, P. J. A. Carter, and K. B. McEnaney. "On the Acoustoelectric Investigation of GaAs/AlGaAs Heterostructures." Physica Status Solidi (a) 133, no. 2 (1992): 363–69. http://dx.doi.org/10.1002/pssa.2211330219.

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44

Mukai, Seiji, Masanobu Watanabe, Hideo Itoh, Hiroyoshi Yajima, Tomomi Yano, and Jong-Chun Woo. "LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures." Japanese Journal of Applied Physics 28, Part 2, No. 10 (1989): L1725—L1727. http://dx.doi.org/10.1143/jjap.28.l1725.

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45

Aithal, Srivatsa, Neng Liu, and Jan J. Dubowski. "Photocorrosion metrology of photoluminescence emitting GaAs/AlGaAs heterostructures." Journal of Physics D: Applied Physics 50, no. 3 (2016): 035106. http://dx.doi.org/10.1088/1361-6463/50/3/035106.

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46

Leybovich, I. S., D. L. Rode, and G. A. Davis. "Thermally stimulated persistent conductivity inn‐AlGaAs/GaAs heterostructures." Journal of Applied Physics 62, no. 3 (1987): 939–41. http://dx.doi.org/10.1063/1.339704.

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47

Sang-Koo Chung, Y. Wu, K. L. Wang, N. H. Sheng, C. P. Lee, and D. L. Miller. "Interface states of modulation-doped AlGaAs/GaAs heterostructures." IEEE Transactions on Electron Devices 34, no. 2 (1987): 149–53. http://dx.doi.org/10.1109/t-ed.1987.22900.

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48

Hawksworth, S. J., J. M. Chamberlain, T. S. Cheng, et al. "Contact resistance to high-mobility AlGaAs/GaAs heterostructures." Semiconductor Science and Technology 7, no. 8 (1992): 1085–90. http://dx.doi.org/10.1088/0268-1242/7/8/010.

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49

Rashad, M. "Excitonic Emission of AlGaAs/GaAs Quantum Well Heterostructures." International Journal of Scientific and Engineering Research 6, no. 9 (2015): 1450–53. http://dx.doi.org/10.14299/ijser.2015.09.008.

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50

Weimann, G., and W. Schlapp. "Carrier concentration in modulation-doped AlGaAs-GaAs heterostructures." Applied Physics A Solids and Surfaces 37, no. 3 (1985): 139–43. http://dx.doi.org/10.1007/bf00617498.

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