Relevant bibliographies by topics / GaAs:Mn

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  2. Dissertations / Theses
  3. Books
  4. Book chapters
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Academic literature on the topic 'GaAs:Mn'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 February 2022

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Journal articles on the topic "GaAs:Mn"

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Szczytko, J., A. Stachow, W. Mac, A. Twardowski, P. Becla, and J. Tworzydło. "Magnetooptical Properties of GaAs:Mn." Acta Physica Polonica A 90, no. 5 (1996): 951–54. http://dx.doi.org/10.12693/aphyspola.90.951.

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Filatov, D. O., and E. I. Malysheva. "Magnetic force microscopy of GaAs:Mn ferromagnetic semiconductors." Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques 1, no. 3 (2007): 352–58. http://dx.doi.org/10.1134/s1027451007030214.

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Dmitriev, A. I., O. V. Koplak, and R. B. Morgunov. "GaAs:Mn Layer Magnetization in GaAs-Based Heterostructures Containing InGaAs Quantum Well." Solid State Phenomena 190 (June 2012): 550–53. http://dx.doi.org/10.4028/www.scientific.net/ssp.190.550.

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Magnetic properties of a GaAs-based heterostructures containing InGaAs quantum well and 2 nm thick GaAs layer doped with 5 at. % Mn (GaAs:Mn) on flat and vicinal substrates were studied. Two types of ferromagnetism were found. In the heterostructures grown on the flat substrate parallel to the (001) GaAs plane the magnetization obeys the Bloch T3/2 temperature dependence while for the structures grown on the vicinal surface grown (disoriented by 3°) the magnetization follows percolation dependence.
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Michel, C., M. T. Elm, B. Goldlücke, et al. "Tailoring the magnetoresistance of MnAs∕GaAs:Mn granular hybrid nanostructures." Applied Physics Letters 92, no. 22 (2008): 223119. http://dx.doi.org/10.1063/1.2937128.

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Akimov, Ilya A., G. V. Astakhov, R. I. Dzhioev, et al. "Spin Relaxation in GaAs Doped with Magnetic (Mn) Atoms." Solid State Phenomena 168-169 (December 2010): 47–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.168-169.47.

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The GaAs doped with donors manifests long times of spin relaxation, while in the case of acceptors (or magnetic impurities) spin relaxation rate increases markedly, in accordance with theoretical predictions. From the practical point of view, this situation is unfavorable, since the devices based on spin degrees of freedom require long times of the spin memory. Therefore semiconductors such as p-GaAs were not considered as promising materials for spintronics. In the present work this conclusion is refuted by means of investigation of the spin dynamics of electrons in epitaxial layers of gallium arsenide doped with Mn impurities. In spite of the expectations, we have discovered the suppression of the spin relaxation of electrons in GaAs:Mn by two orders of magnitude. This effect is a consequence of compensation of the hole and manganese effective magnetic fields due to the antiferromagnetic interaction. The analogous results obtained for the case of GaAs quantum well doped with Mn [R. C. Myers, et al., Nature Materials 7, 203 (2008)] were interpreted as the result of the spin precession of magnetic acceptors rather than electrons. Through separate measurements of g-factor by means of time resolved spectroscopy it has been proved that long times of spin relaxation in p-GaAs:Mn relate to electrons and not to magnetic acceptors. The oscillation frequency of the angle of Kerr rotation depends linearly on the magnetic field and complies with g=0.46±0.02, i.e. the electronic g-factor.
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Ho Yeom, Tae. "Electron Paramagnetic Resonance Characterization of Mn2+Ion in GaAs:Mn Crystal." Journal of the Physical Society of Japan 81, no. 10 (2012): 104702. http://dx.doi.org/10.1143/jpsj.81.104702.

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Krstajić, P. M., V. A. Ivanov, F. M. Peeters, V. Fleurov, and K. Kikoin. "On the nature of ferromagnetism in diluted magnetic semiconductors: GaAs:Mn." Europhysics Letters (EPL) 61, no. 2 (2003): 235–41. http://dx.doi.org/10.1209/epl/i2003-00224-x.

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Burobina, V., and Ch Binek. "Spin relaxation time dependence on optical pumping intensity in GaAs:Mn." Journal of Applied Physics 115, no. 16 (2014): 163909. http://dx.doi.org/10.1063/1.4874218.

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Farshchi, R., D. J. Hwang, N. Misra, et al. "Structural, magnetic, and transport properties of laser-annealed GaAs:Mn–H." Journal of Applied Physics 106, no. 1 (2009): 013904. http://dx.doi.org/10.1063/1.3153943.

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Sapega, V. F., T. Ruf, and M. Cardona. "Spin-Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn." physica status solidi (b) 226, no. 2 (2001): 339–56. http://dx.doi.org/10.1002/1521-3951(200108)226:2<339::aid-pssb339>3.0.co;2-8.

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Dissertations / Theses on the topic "GaAs:Mn"

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González, Balanta Miguel Ángel 1985. "Interação entre portadores e íons magnéticos em poços quânticos de InGaAs/GaAs:Mn." [s.n.], 2014. http://repositorio.unicamp.br/jspui/handle/REPOSIP/276965.

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Orientador: Maria José Santos Pompeu Brasil<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin<br>Made available in DSpace on 2018-08-25T21:17:06Z (GMT). No. of bitstreams: 1 GonzalezBalanta_MiguelAngel_D.pdf: 5068966 bytes, checksum: c4aafc0a3e660efae9cc987f6dd987e5 (MD5) Previous issue date: 2014<br>Resumo: Neste trabalho investigamos a interação entre portadores confinados em poços quânticos de InGaAs/GaAs e íons de Mn de uma dopagem tipo delta na barreira do poço. Utilizamos como base para este estudo dois tipos de estruturas. O primeiro tipo tem apenas a dopagem tipo delta de Mn e o segundo tipo, inclui duas camadas de dopagem tipo delta nas duas barreiras do poço, sendo uma dopagem de C e a outra de Mn. Observamos que a assimetria das estruturas devido às dopagens se reflete na interação dos portadores confinados com os íons de Mn. Os resultados indicam que esta interação se torna relativamente mais forte no conjunto de amostras com dopagem assimétrica apenas de Mn. Em nossa investigação, utilizamos diversas técnicas ópticas como fotoluminescência, fotoluminescência de excitação e fotoluminescência resolvida no tempo, incluindo análises da polarização da luz emitida e efeitos de campo magnético. Apesar da separação espacial entre os íons de Mn e os portadores confinados no poço, observamos vários efeitos que associamos a interação entre estas entidades. Observamos uma significativa amplificação da intensidade da força de oscilador de transições proibidas do poço em estruturas dopadas apenas com Mn. Este efeito foi interpretado como uma possível indicação da formação de polarons magnéticos ligados. Nas medidas com campo magnético, vimos que o grau de polarização dos portadores apresenta uma componente associada à presença dos íons de Mn. Esta componente, dominante apenas a baixos campos magnéticos, segue uma função tipo Brillouin associada a sistemas ferromagnéticos. Dependendo do perfil da estrutura, esta componente pode ter seu sinal invertido, levando a uma dependência da polarização com o campo magnético anômala. Finalmente, realizamos um estudo detalhado da dinâmica de polarização dos portadores com medidas de fotoluminescência resolvida no tempo. Desenvolvemos uma técnica especial envolvendo dois feixes de laser pulsados com controle tanto da separação temporal entre seus pulsos, quanto das suas polarizações circulares, que podiam ser iguais ou invertidas. Observamos que o grau de polarização gerado por um pulso é alterado se logo antes dele (centenas de pico-segundos), a amostra é excitada com pulso com polarização invertida. Associamos este efeito a um tipo de memória de polarização relacionada com a magnetização óptica dos íons de Mn. Assim, a excitação com luz circularmente polarizada gera portadores com spin preferencial, que atuam sobre os íons magnéticos, e que por sua vez afetam a polarização dos próprios portadores, agindo como um reservatório de polarização devido aos tempos de spin relativamente mais longos dos íons de Mn. Notamos que os efeitos mencionados acima são consideravelmente mais fortes no conjunto de amostras apenas com dopagens de Mn que devem apresentar um perfil de potencial mais assimétrico. Também obtivemos resultados consistentes que demonstram que estes efeitos tendem a diminuir quando a quantidade de Mn na camada delta é reduzida, quando a separação entre a camada delta de Mn e o poço quântico é aumentada, e quando aumentamos a temperatura do sistema. Em especial, os efeitos tendem a desaparecer para temperaturas em torno de 60 K, consistente com os valores da temperatura de Curie obtida para amostras similares<br>Abstract: In this work we investigated the interaction between confined carriers in of InGaAs/GaAs quantum wells (QWs) and Mn ions from a Mn delta-doping at the barrier of the QW. We have used two types of structures in this study. Samples of the first type have only a Mn delta-doping at the QW barrier, while samples from the second type include an additional C delta-doping layer at the other barrier. We found that the asymmetry of the structures due to doping is reflected in the interaction of carriers confined in the well and the Mn ions. The results indicate that this interaction becomes relatively stronger in the set of samples with asymmetrical doping of Mn solely. In our research, we have performed continuous-wave photoluminescence (CW-PL), excitation photoluminescence (CW-PLE), time-resolved photoluminescence (TR-PL), including analysis of the polarization of the emitted light and effects of a magnetic field. Despite the spatial separation between the Mn ions and the carriers confined in the QW, we observed various effects attributed to the interaction between these entities. We observed a significant enhancement of the intensity of the oscillator strength from transitions that are prohibited for symmetric QWs for the Mn doped structures. This effect was interpreted as a possible indication of the formation of bound magnetic polarons (BMP). In the measurements under a magnetic field, we observed that the degree of polarization of the carrier has a component associated with the presence of Mn ions. This component dominates the polarization under small magnetic fields and follows a like-Brillouin function associated to ferromagnetic systems. Depending on the profile of the structure, this component may have its sign reversed, leading to an anomalous polarization dependency with magnetic field. Finally, we performed a detailed study of the dynamics of the polarization of the carriers with time-resolved photoluminescence. We have developed a special technique involving two pulsed beams with a variable time-delay and individually-controlled circular-polarizations, which could be equal or reversed. We observed that the degree of polarization generated by a pulse is changed if just before it (hundreds of pico seconds) the sample was excited with a pulse with reversed polarization. We associated this effect to a kind of polarization memory related to the optical magnetization of Mn ions. Therefore, the excitation with circularly-polarized light generates carriers with a preferential spin that might act on the magnetic ions. In turn, the polarized Mn ions must affect the spin-polarization of the carriers, acting as a reservoir of the polarization, due to the relatively longer spin times of the Mn ions. We noticed that all these effects are considerably stronger for the set of samples doped only with Mn, that should present a more asymmetric potential profile. We also obtained consistent results revealing that all these effects tend to decrease when the amount of Mn in the delta-layer is reduced, when the separation between the Mn layer and the QW is increased, and when we increase the temperature of the sample. In particular, the effects tend to disappear at temperatures around 60 K, in accordance with the Curie temperature found for similar samples<br>Doutorado<br>Física<br>Doutor em Ciências
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Khazen, Khashayar. "Etude des couches Nanométriques de GaMnAs par Résonance Ferromagnétique." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2008. http://tel.archives-ouvertes.fr/tel-00329331.

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Cette thèse est consacrée à l'étude par Résonance Ferromagnétique (RFM) de l'influence des contraintes et des concentrations en trous et en Mn, sur les propriétés magnétiques de films nanométriques de Ga<sub>1-x</sub>Mn<sub>x</sub>As.<br />L'influence des contraintes a été étudié dans des films contenant 7% de Mn déposés sur GaAs ou GaInAs et contraints en compression ou en extension respectivement. Les axes de facile aimantation, le type d'anisotropie, le facteur de Landé, la température de Curie et les constantes d'anisotropie on été déterminés par RFM. <br />La passivation par l'hydrogène de l'activité électrique des Mn a permis l'étude de l'influence de la concentration en trous dans ces systèmes. Différents régimes de conductivité ont pu être atteints: isolant, conduction par bande d'impureté et métallique. Les facteurs g dépendent à la concentration de trous et la température. La relation théorique entre ces facteurs et la polarisation de trous est présentée. Les variations des constantes d'anisotropie magnétocrystallines sont comparées aux modèles théoriques. <br />La plus faible concentration en trous permettant d'atteindre un état ferromagnétique est estimée à 10<sup>19</sup>cm<sup>-3</sup>. La structure des domaines a été étudiée par microscopie magnéto-optique pour cette concentration. L'influence du niveau de dopage en Mn a été étudiée dans la plage de 7% à 21%. Les résultats montrent que, contrairement aux prédictions du modèle de champ moyen, la température de Curie ne dépasse pas 180K même pour les forts dopages, ce qui est attribué à un haut niveau de compensation magnétique. Enfin, la relaxation de l'aimantation est étudiée et des facteurs de damping anisotropes sont mis en évidence.
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Vijarnwannaluk, Sathon. "Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C." Diss., Virginia Tech, 2002. http://hdl.handle.net/10919/27491.

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Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below 400 °C, nonradiative recombination processes dominate and photoluminescence is quenched. When the growth temperature exceeds 400 °C, band-to-band photoluminescence emission appears. We conclude that the films change in character from LT-GaAs:C to normal GaAs:C once the growth temperature reaches 400 °C. Annealing, however, shows a different behavior. Once grown as LT-GaAs:C, this material retains its nonconducting nonluminescing LT characteristics even when annealed at 600 °C. The Raman-scattering measurements showed that the growth temperature and the doping concentration influence the position, broadening, and asymmetry of the longitudinal-optical phonon Raman line. We attribute these effects to changes in the concentration of interstitial carbon in the films. Also, the shift of the Raman line was used to estimate the concentration of arsenic-antisite defects in undoped LT-GaAs. The infrared transmission measurements on the carbon-doped material showed that only a fraction of the carbon atoms occupy arsenic sites, that this fraction increases as the growth temperature increases, and that it reaches about 100% once the growth temperature reaches 400 °C. The details of all these measurements are discussed. Infrared transmission and photoluminescence measurements were also carried out on heavily-doped GaAs:C films grown by molecular beam epitaxy at the standard 600 C temperature. The infrared results reveal, for dopings under 5 x 10⁹ cm⁻³, a linear relation between doping concentration and the integrated optical absorption of the carbon localized-vibrational-mode band. At higher dopings, the LVM integrated absorption saturates. Formation of C<sub>As</sub>-C<sub>As</sub> clusters is proposed as the mechanism of the saturation. The photoluminescence spectra were successfully analyzed with a simple model assuming thermalization of photoelectrons to the bottom of the conduction band and indirect-transition recombination with holes populating the degenerately doped valence band. The analysis yields the bandgap reduction and the Fermi-level-depth increase at high doping.<br>Ph. D.
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Person, Patrice. "Influence de l'enrichissement superficiel en arsenic sur l'ohmicité du contact n-GaAs:In\Au." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb376088413.

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Person, Patrice. "Influence de l'enrichissement superficiel en arsenic sur l'ohmicité du conact n-GaAs:In\Au." Ecully, Ecole centrale de Lyon, 1987. http://www.theses.fr/1987ECDL0009.

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Presentation des differents modeles de jonctions metal-semiconducteur et explication des mecanismes de transport du courant a l'interface. On definit alors le contact ohnique et la resistance specifique de contact. On conclue quand a la faisabilite de contacts ohniques de bonne qualite apres enrichissement de la surface du substrat de n-gaas en arsenic
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Songprakob, Wantana. "Optical studies of highly-doped GaAs:C." Diss., Virginia Tech, 2001. http://hdl.handle.net/10919/28927.

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Infrared reflectivity and transmittance measurements (200=5000 cm^-1) were carried out on heavily-doped GaAs:C films grown by molecular beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000=3000 cm^-1 region and the one-phonon band near 270 cm^-1 rides on a progressively increasing high-reflectivity background. An effective-plasmon/one-phonon dielectric function with only two free parameters (plasma frequency Ï p and damping constant γp) gives a good description of the main features of the reflectivity spectra. The dependence of effective plasma frequency on hole concentration p is linear. At each doping, the effective-plasmon damping constant is large and corresponds to an optical hole mobility that is about half the Hall mobility at that p. Secondary-ion mass spectroscopy and localized-vibrational-mode measurements indicate that the Hall-effect-derived hole concentration is close to the carbon concentration and that the Hall factor is close to unity, so that the Hall mobility provides a good estimate of the actual dc mobility. Also, analysis shows that, for our highly-doped samples, the observed dichotomy between the dc and infrared mobilities is not a statistical-averaging artifact of the approximations involved in the model. The explanation of the small infrared mobility resides in the influence of intervalence band absorption on the effective-plasmon fit, which operationally defines that mobility via the effective-plasmon damping. The optical properties obtained with the use of the effective-plasmon model for GaAs:C yield a phenomenological, approximate, overall picture of the infrared spectra. But the neglect of intervalenceband transitions, for this p-type semiconductor, is shown (in this dissertation) to be a serious drawback of this simple model. In order to obtain the optical properties of GaAs:C in a model-independent way, and to attempt to resolve the apparent dc/infrared mobility dichotomy, we made use of a recently-developed spectroscopic-analysis procedure. Using direct numerical-solution techniques for the reflectance (R) and transmittance (T) equations of a multilayer structure, we analyzed our infrared R and T results for highly-doped films having hole concentrations from 2à 10^19 up to 1.4à 10^20 cm^-3. The optical properties were determined for photon energies from 0.07 to 0.6 eV, in which region plasmon (intraband) and intervalenceband contributions are in competition. Our results for the optical absorption coefficient resolve two separate peaks located (at high doping) at about 0.1 and 0.2 eV. (The effective-plasmon model necessarily missed the two-peak character of the actual absorption spectrum.) By carrying out theoretical calculations of the intervalenceband (IVB) absorption processes for our dopings, we identify the peak near 0.2 eV with light-hole to heavy-hole IVB transitions, and we attribute the lower-energy peak to the hole plasmon. Our experimental absorption spectra are very well described by a model combining the intervalenceband contribution to the dielectric function with a plasmon contribution. The hole-plasmon parameters omega_plasmon and gamma_plasmon that we obtain for highly-doped p-GaAs yield an infrared mobility which (unlike the too-small IVB-entangled infrared mobility implied by the use of the usual effective-plasmon model) is in substantial agreement with the dc mobility. Therefore, in actuality, there is no dc/infrared mobility discrepancy. The discrepancy implied by the use of the usual, standard-operating-procedure, effective-plasmon model is a consequence of the inadequacy of that model for p-type semiconductors exhibiting intervalenceband infrared absorption. Raman-scattering measurements were carried out on the GaAs:C films. Only the phononlike coupled plasmon-phonon mode is observed. The non-occurrence of the plasmonlike mode is due to the large damping of the hole plasmon and the competition with strong Raman scattering by intervalenceband transitions among the heavy-hole, light-hole, and split-off bands. Analysis of the phononlike coupled mode, within the framework of the wavevector-dependent Lindhard-Mermin dielectric function, supports the hole properties that we determined by Hall and infrared studies. Photoluminescence measurements showed that the split-off band also participates in the photoluminescence of GaAs:C, giving rise to an above-bandgap emission band corresponding to transitions from the conduction band to the split-off valence band.<br>Ph. D.
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Hamamdjian, Gilbert. "Fluctuations de potentiel et conductivité mixte dans GaAs:Cr semi-isolant." Montpellier 2, 1987. http://www.theses.fr/1987MON20003.

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Realisation de mesures de conductivite continue, de conductivite alternative haute frequence, de pouvoir thermoelectrique, entre 300 et 450 k. En developpant un modele tenant compte des fluctuations de potentiel a longue portee, il est montre qu'il est possible d'envisager toutes les situations physiques possibles dans le compose semi-isolant et de rendre compte de tous les comportements experimentaux
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Khoukh, Abdelaziz. "GaAs et GaAs:In influence des traitements de surface et caractérisation de l'homogénéité par imagerie de la photoluminescence /." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37614697d.

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Mendonça, Cesar Augusto Curvello de. "Caracterização ótica de epitaxia MBE de GaAs e exciton ligado ao aceitador de estanho em LPE-GaAs:Sn." [s.n.], 1987. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277717.

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Orientador: Eliermes Arraes Meneses<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin<br>Made available in DSpace on 2018-07-14T21:40:07Z (GMT). No. of bitstreams: 1 Mendonca_CesarAugustoCurvellode_M.pdf: 1779771 bytes, checksum: d1a5e39ca7e4da8c9f3213d9f403a4db (MD5) Previous issue date: 1987<br>Resumo: Foram feitas medidas de fotoluminescência em regime de baixo nível de excitação ótica e baixas temperaturas (< 2K). Os objetivos deste trabalho foram a caracterização e o estudo de algumas amostras de Arseneto de Gálio(GaAs), crescidas por Epitaxia por Feixe Molecular(MBE) não dopadas, e outras crescidas por Epitaxia de Fase Líquida(LPE) dopadas com Estanho(Sn). Nas primeiras, a baixa eficiência quântica de emissão das linhas excitônicas foram associadas à possível existência de grande concentração de defeitos gerados no processo de crescimento. Por outro lado, observamos alta Intensidade para linhas atribuídas a transições envolvendo impurezas aceitadoras, as quais apontaram para a presença de altas concentrações de Carbono no material. Nas últimas verificamos, através do espectro, a presença de impurezas aceitadoras de Zinco, Carbono e Estanho. Focalizamos principalmente o nível aceitador profundo introduzido no "gap" do GaAs, pelo Sn, através das transições ocorridas a partir do complexo exciton ligado à impureza (Snº, X) e banda impureza (e, Snº). Um cálculo para energia de ligação do complexo foi proposto, considerando-se uma renormalização dos valores da massa efetiva de buraco, m*b, e da constante dielétrica<br>Abstract: Photoluminescence measurements have been performed under low excitation levels and low temperatures (< 2K). The main goals in this work has been the characterization and the study of some samples of undoped Gallium Arsenide (GaAs), grown in a Molecular Bean Epitaxy (MBE) system, and Liquid-Phase-Epitaxy(LPE) GaAs, which were intentionally doped with Tin(Sn). In the former the low emission quantum efficiency of the excitonic lines has been related to the possible existence of a high concentration of defects, generated in the growth process. On the other hand, the high intensity observed in those lines attributed to transitions involving acceptor impurities, pointed to the presence of high concentrations of Carbon in this material. In the latter, the presence of acceptor impurities as Zinc, Carbon and Tin has been verified. We foccused most of our attention at the deep acceptor level, in the gap, due to Sn in GaAs through the transitions from the excitonic complex (Snº, X) and band impurity (e, Snº). A calculation of the binding energy of this complex has been proposed, taking into account a renormalization of the hole effective mass, m*h, and dielectric constant<br>Mestrado<br>Física<br>Mestre em Física
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Khoukh, Abdelaziz. "GaAs & GaAs:In : Influence des traitements de surface et caractérisation de l'homogénéité par imagerie de la photoluminescence." Ecully, Ecole centrale de Lyon, 1988. http://www.theses.fr/1988ECDL0024.

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Dans ce travail, nous avons effectue une etude comparative des substrats de gaas et gaas:in pendant certains traitements technologiques (polissage, attaque chimique, recuit). Nous montrons que la procedure de polissage de gaas par une solution aqueuse de naocl ne peut-etre appliquee pour gaas:in sans modification. La vitesse de polissage croit avec la teneur en indium et la concentration optimale de naocl doit etre diminuee dans le cas de gaas:in. De plus, l'attaque chimique dans une solution de naocl permet de reveler les striations d'indium dans le materiau gaas:in. Nous avons egalement etudie la decomposition thermique des substrats non proteges de gaas:in. Nous montrons que le recuit a des temperatures proches de 700#oc provoque une exodiffusion de l'indium suivie par la nucleation d'ilots d'indium a la surface. Pour des temperatures de recuit proches de 850#oc, l'exodiffusion est suivie par une formation de precipites d'indium et de gallium pres de la surface. Dans le cadre de ce travail, nous avons aussi etudie les substrats gaas et gaas:in par imagerie de photoluminescence (pl) a temperature ambiante. Nos mesures mettent en evidence la presence d'inhomogeneites diverses dues aux dislocations et leurs structures cellulaires, aux striations de dopage, aux bandes de glissement et aux defauts de surface. Nous montrons egalement que l'intensite de pl et le contraste des images sont fortement influences par les traitements de surface (attaque, recuit, depot d'isolant). Les resultats obtenus sont discutes sur la base d'un modele theorique simple, fonde sur la resolution de l'equation de continuite
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Books on the topic "GaAs:Mn"

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Keipper, Phillip J. InP:Fe and GaAs:Ce picosecond photoconductive radiation detectors. 1985.

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Design, Testing, and Evaluation of GaAsPN Sequence Generator Circuits Implemented in DCFL and TDFL. Storming Media, 1997.

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Book chapters on the topic "GaAs:Mn"

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Heimbrodt, Wolfram, and Peter J. Klar. "Magnetic Interactions in Granular Paramagnetic-Ferromagnetic GaAs:Mn/MnAs Hybrids." In Local-Moment Ferromagnets. Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/11417255_11.

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Tyazhev, Anton, and Oleg Tolbanov. "X-ray Sensors Based on Chromium Compensated Gallium Arsenide (HR GaAs:Cr)." In Energy Efficient Computing & Electronics. CRC Press, 2019. http://dx.doi.org/10.1201/9781315200705-6.

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Stasch, R., M. Asche, M. Giehler, R. Hey, and O. G. Sarbey. "Field Induced Electron Capture by Metastable Centers in Planar-Doped GaAs:Si." In Hot Carriers in Semiconductors. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_30.

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Tsatsul’nikov, A. F., I. L. Krestnikov, W. V. Lundin, et al. "Formation of GaAsN nanoinsertions in a GaN matrix." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_183.

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Bahi azzououm, A., A. Aissat, and J. P. Vilcot. "Theoretical Modeling and Optimization of GaAsPN/GaAs Tandem Dual-Junction Solar Cells." In Lecture Notes in Electrical Engineering. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6259-4_35.

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Dong, B., W. J. Fan, and Y. X. Dang. "Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser." In Semiconductor Photonics: Nano-Structured Materials and Devices. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.95.

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Sanorpim, S., F. Nakajima, R. Katayama, and K. Onabe. "MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission." In Semiconductor Photonics: Nano-Structured Materials and Devices. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.218.

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Rahbi, R., D. Mathiot, J. Chevallier, C. Grattepain, and M. Razeghi. "Modeling of hydrogen diffusion in p-type GaAs:Zn." In Hydrogen in Semiconductors. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50017-6.

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Ohta, H., S. Okubo, and Y. Fujiwara. "Electron spin resonance studies of GaAs:Er,O." In Rare Earth and Transition Metal Doping of Semiconductor Materials. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-08-100041-0.00005-6.

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Požela, J., A. Tamaševičius, and J. Ulbikas. "QUANTITATIVE CHARACTERIZATION OF CHAOTIC CURRENT OSCILLATIONS IN GaAs:Cr." In Hot Carriers in Semiconductors. Elsevier, 1988. http://dx.doi.org/10.1016/b978-0-08-036237-3.50114-5.

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Conference papers on the topic "GaAs:Mn"

1

Elm, M. T., J. Teubert, P. J. Klar, et al. "Transport study of the annealing-induced transition from Ga1−xMnxAs alloys to GaAs:Mn/MnAs hybrids." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730366.

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Loncierz, B., and Marian Nowak. "Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAs." In XII Conference on Solid State Crystals: Materials Science and Applications, edited by Antoni Rogalski, Jaroslaw Rutkowski, Andrzej Majchrowski, and Jerzy Zielinski. SPIE, 1997. http://dx.doi.org/10.1117/12.276215.

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Jurado, J. F., C. Vargas Hernández, J. E. Sánchez, F. Racedo Niebles, P. M. Champion та L. D. Ziegler. "Studies of Strain in Heterostructures GaAs∕GaAs, GaAs:C∕GaAs and GaAs:Si∕GaAs by Spectroscopy μ-Raman". У XXII INTERNATIONAL CONFERENCE ON RAMAN SPECTROSCOPY. AIP, 2010. http://dx.doi.org/10.1063/1.3482369.

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Ikezawa, M., N. Yasuda, L. Zhang, Y. Sakuma, K. Sakoda, and Y. Masumoto. "Resonant Excitation of Single Luminescence Centers in GaAs:N." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-8-5.

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Zarubin, Andrey, Dmitry Mokeev, Vladimir Novikov, Oleg Tolbanov, and Anton Tyazhev. "GaAs:Cr X-ray pixel detectors." In 2011 International Siberian Conference on Control and Communications (SIBCON 2011). IEEE, 2011. http://dx.doi.org/10.1109/sibcon.2011.6072649.

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Mumtaz, Asim, Malina Milanova, Ian Sandall, et al. "GaAsSbN for Multi-Junction Solar Cells." In 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC). IEEE, 2020. http://dx.doi.org/10.1109/pvsc45281.2020.9300524.

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Chi-Kuang Chen, Ta-Chun Ma, Yan-Ting Lin, and Hao-Hsiung Lin. "GaAsSbN/GaAs long wavelength PIN detectors." In Related Materials (IPRM). IEEE, 2008. http://dx.doi.org/10.1109/iciprm.2008.4703012.

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Yagi, Shuhei, Shunsuke Noguchi, Yasuto Hijikata, et al. "Optical absorption by E+ miniband of GaAs:N δ-doped superlattices." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744981.

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Giniunas, Linas, R. Danielius, R. Adomavicius, and Arunas Krotkus. "Picosecond measurement of trap population dynamics in GaAs:As." In Advanced Optical Materials and Devices, edited by Steponas P. Asmontas and Jonas Gradauskas. SPIE, 2001. http://dx.doi.org/10.1117/12.417609.

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Heberle, A. P., U. Strauss, W. W. Ruhle, K. H. Bachem, and T. Lauterbach N. Haegel. "Minority-Carrier Lifetime in Heavily Doped GaAs:C." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.pc2-12.

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Reports on the topic "GaAs:Mn"

1

Iyer, Shanthi. Optical Studies Of GaAsSbN Alloys and Their Quantum Well Heterostructures. Defense Technical Information Center, 2004. http://dx.doi.org/10.21236/ada424998.

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Wolk, J. A. DX centers in III-V semiconductors under hydrostatic pressure. [GaAs:Si; InP:S]. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/6710951.

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