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Journal articles on the topic 'GaAs:Mn'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Szczytko, J., A. Stachow, W. Mac, A. Twardowski, P. Becla, and J. Tworzydło. "Magnetooptical Properties of GaAs:Mn." Acta Physica Polonica A 90, no. 5 (1996): 951–54. http://dx.doi.org/10.12693/aphyspola.90.951.

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2

Filatov, D. O., and E. I. Malysheva. "Magnetic force microscopy of GaAs:Mn ferromagnetic semiconductors." Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques 1, no. 3 (2007): 352–58. http://dx.doi.org/10.1134/s1027451007030214.

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3

Dmitriev, A. I., O. V. Koplak, and R. B. Morgunov. "GaAs:Mn Layer Magnetization in GaAs-Based Heterostructures Containing InGaAs Quantum Well." Solid State Phenomena 190 (June 2012): 550–53. http://dx.doi.org/10.4028/www.scientific.net/ssp.190.550.

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Magnetic properties of a GaAs-based heterostructures containing InGaAs quantum well and 2 nm thick GaAs layer doped with 5 at. % Mn (GaAs:Mn) on flat and vicinal substrates were studied. Two types of ferromagnetism were found. In the heterostructures grown on the flat substrate parallel to the (001) GaAs plane the magnetization obeys the Bloch T3/2 temperature dependence while for the structures grown on the vicinal surface grown (disoriented by 3°) the magnetization follows percolation dependence.

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4

Michel, C., M. T. Elm, B. Goldlücke, et al. "Tailoring the magnetoresistance of MnAs∕GaAs:Mn granular hybrid nanostructures." Applied Physics Letters 92, no. 22 (2008): 223119. http://dx.doi.org/10.1063/1.2937128.

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5

Akimov, Ilya A., G. V. Astakhov, R. I. Dzhioev, et al. "Spin Relaxation in GaAs Doped with Magnetic (Mn) Atoms." Solid State Phenomena 168-169 (December 2010): 47–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.168-169.47.

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The GaAs doped with donors manifests long times of spin relaxation, while in the case of acceptors (or magnetic impurities) spin relaxation rate increases markedly, in accordance with theoretical predictions. From the practical point of view, this situation is unfavorable, since the devices based on spin degrees of freedom require long times of the spin memory. Therefore semiconductors such as p-GaAs were not considered as promising materials for spintronics. In the present work this conclusion is refuted by means of investigation of the spin dynamics of electrons in epitaxial layers of gallium arsenide doped with Mn impurities. In spite of the expectations, we have discovered the suppression of the spin relaxation of electrons in GaAs:Mn by two orders of magnitude. This effect is a consequence of compensation of the hole and manganese effective magnetic fields due to the antiferromagnetic interaction. The analogous results obtained for the case of GaAs quantum well doped with Mn [R. C. Myers, et al., Nature Materials 7, 203 (2008)] were interpreted as the result of the spin precession of magnetic acceptors rather than electrons. Through separate measurements of g-factor by means of time resolved spectroscopy it has been proved that long times of spin relaxation in p-GaAs:Mn relate to electrons and not to magnetic acceptors. The oscillation frequency of the angle of Kerr rotation depends linearly on the magnetic field and complies with g=0.46±0.02, i.e. the electronic g-factor.

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6

Ho Yeom, Tae. "Electron Paramagnetic Resonance Characterization of Mn2+Ion in GaAs:Mn Crystal." Journal of the Physical Society of Japan 81, no. 10 (2012): 104702. http://dx.doi.org/10.1143/jpsj.81.104702.

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7

Krstajić, P. M., V. A. Ivanov, F. M. Peeters, V. Fleurov, and K. Kikoin. "On the nature of ferromagnetism in diluted magnetic semiconductors: GaAs:Mn." Europhysics Letters (EPL) 61, no. 2 (2003): 235–41. http://dx.doi.org/10.1209/epl/i2003-00224-x.

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8

Burobina, V., and Ch Binek. "Spin relaxation time dependence on optical pumping intensity in GaAs:Mn." Journal of Applied Physics 115, no. 16 (2014): 163909. http://dx.doi.org/10.1063/1.4874218.

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9

Farshchi, R., D. J. Hwang, N. Misra, et al. "Structural, magnetic, and transport properties of laser-annealed GaAs:Mn–H." Journal of Applied Physics 106, no. 1 (2009): 013904. http://dx.doi.org/10.1063/1.3153943.

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10

Sapega, V. F., T. Ruf, and M. Cardona. "Spin-Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn." physica status solidi (b) 226, no. 2 (2001): 339–56. http://dx.doi.org/10.1002/1521-3951(200108)226:2<339::aid-pssb339>3.0.co;2-8.

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11

Димитриев, Г. С., В. Ф. Сапега, Н. С. Аверкиев, И. Е. Панайотти та K. H. Ploog. "Влияние размерного квантования на спиновую поляризацию дырок в структурах с квантовыми ямами разбавленного магнитного полупроводника (Ga,Mn)As/AlAs". Физика твердого тела 59, № 11 (2017): 2240. http://dx.doi.org/10.21883/ftt.2017.11.45068.109.

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Исследовано влияние размерного квантования на спиновую поляризацию дырок в структуре с квантовыми ямами ферромагнитного полупроводника (Ga,Mn)As. Показано, что спиновая поляризация дырок в примесной зоне определяется, скорее, магнитными свойствами самого GaMnAs, а не эффектом размерного квантования. Развита модель акцептора Mn в квантовой яме, описывающая поляризационные характеристики фотолюминесценции в квантовых ямах GaAs:Mn/AlAs. Экспериментальные данные и теоретический анализ продемонстрировали, что спиновая поляризация дырок в квантовых ямах (Ga,Mn)As/AlAs может быть объяснена в модели, предполагающей, что дырки локализованы в примесной зоне. Работа поддержана грантом РФФИ N 15-52-12017 ННИО-а и грантом Правительства РФ (договор N 14.Z50.31.0021, 07.04.2014-31.12.2018. Ведущий ученый М.Х. Байер). DOI: 10.21883/FTT.2017.11.45068.109

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12

Song, Q., K. H. Chow, R. I. Miller та ін. "β-Detected NMR Search for Magnetic Phase Separation in Epitaxial GaAs:Mn". Physics Procedia 30 (2012): 174–77. http://dx.doi.org/10.1016/j.phpro.2012.04.066.

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13

Seo, S. S. A., T. W. Noh, Y. W. Kim, et al. "Nondestructive spectroscopic method to detect MnAs metallic nanocrystals in annealed GaAs:Mn." Journal of Applied Physics 95, no. 12 (2004): 8172–77. http://dx.doi.org/10.1063/1.1739524.

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14

Yakubenya, S. M., and K. F. Shtel’makh. "About anomalous g factor value of Mn-related defects in GaAs:Mn." Applied Magnetic Resonance 47, no. 7 (2016): 671–84. http://dx.doi.org/10.1007/s00723-015-0746-4.

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15

Ivanov, V. A., P. M. Krstajic, F. M. Peeters, V. Fleurov, and K. Kikoin. "On the nature of ferromagnetism in dilute magnetic semiconductors: GaAs:Mn and GaP:Mn." Journal of Magnetism and Magnetic Materials 258-259 (March 2003): 237–40. http://dx.doi.org/10.1016/s0304-8853(02)01023-5.

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16

Song, Q., K. H. Chow, R. I. Miller, et al. "Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn." Physica B: Condensed Matter 404, no. 5-7 (2009): 892–95. http://dx.doi.org/10.1016/j.physb.2008.11.143.

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17

Burobina, Veronika. "Calculation of impurity density and electron-spin relaxation times in p-type GaAs:Mn." Materials Science and Engineering: B 255 (May 2020): 114518. http://dx.doi.org/10.1016/j.mseb.2020.114518.

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18

Nidda, H.-A. Krug von, T. Kurz, A. Loidl, et al. "Tuning the magnetic properties of GaAs:Mn/MnAs hybrids via the MnAs cluster shape." Journal of Physics: Condensed Matter 18, no. 26 (2006): 6071–83. http://dx.doi.org/10.1088/0953-8984/18/26/025.

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19

DOROKHIN, M. V., B. N. ZVONKOV, YU A. DANILOV, et al. "FORMATION OF MAGNETIC GaAs:Mn LAYERS FOR InGaAs/GaAs LIGHT EMITTING QUANTUM-SIZE STRUCTURES." International Journal of Nanoscience 06, no. 03n04 (2007): 221–24. http://dx.doi.org/10.1142/s0219581x07004614.

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A possibility of the formation of light emitting devices, containing GaAs : Mn layers, by the MOCVD epitaxy process was demonstrated. It was shown that produced GaAs : Mn layers exhibit ferromagnetic properties at room temperature. Luminescent and electrical properties of the In(Ga)As / GaAs quantum-size heterostructures with incorporated GaAs : Mn layers were studied.

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20

Mao, D., and P. C. Taylor. "Nuclear-spin echoes in GaAs:Zn and GaAs:In." Physical Review B 52, no. 8 (1995): 5665–71. http://dx.doi.org/10.1103/physrevb.52.5665.

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21

Michel, C., C. H. Thien, S. Ye, et al. "Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic–ferromagnetic hybrids at low temperatures." Superlattices and Microstructures 37, no. 5 (2005): 321–26. http://dx.doi.org/10.1016/j.spmi.2005.02.001.

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22

Sadowski, Janusz, Piotr Dłużewski, Sławomir Kret, et al. "GaAs:Mn Nanowires Grown by Molecular Beam Epitaxy of (Ga,Mn)As at MnAs Segregation Conditions." Nano Letters 7, no. 9 (2007): 2724–28. http://dx.doi.org/10.1021/nl071190f.

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23

Słupiński, T., J. Caban, and K. Moskalik. "Hole Transport in Impurity Band and Valence Bands Studied in Moderately Doped GaAs:Mn Single Crystals." Acta Physica Polonica A 112, no. 2 (2007): 325–30. http://dx.doi.org/10.12693/aphyspola.112.325.

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24

del Rio-de Santiago, A., C. F. Sánchez-Valdés, J. L. Sánchez Llamazares, et al. "Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy." Journal of Magnetism and Magnetic Materials 475 (April 2019): 715–20. http://dx.doi.org/10.1016/j.jmmm.2018.12.030.

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25

Venkatasubramanian, R., M. L. Timmons, T. S. Colpitts, and S. Asher. "Properties and use of cycled grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si layers for high-conductance GaAs tunnel junctions." Journal of Electronic Materials 21, no. 9 (1992): 893–99. http://dx.doi.org/10.1007/bf02665546.

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26

Gas, Katarzyna, Janusz Sadowski, Takeshi Kasama, et al. "Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates." Nanoscale 5, no. 16 (2013): 7410. http://dx.doi.org/10.1039/c3nr01145c.

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27

Бабунц, Р. А., А. С. Гурин, И. В. Ильин та ін. "Высокочастотная ЭПР-спектроскопия парамагнитных центров марганца в кристаллах GaAs : Mn". Физика твердого тела 63, № 11 (2021): 1906. http://dx.doi.org/10.21883/ftt.2021.11.51596.146.

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High-frequency electron paramagnetic resonance (EPR) is used to study the unique properties of manganese centers in a GaAs:Mn crystal in strong magnetic fields at low temperatures. At frequencies of 94 and 130 GHz, EPR transitions were recorded in the MnGa2+ - SH complex, which is a manganese ion with spin S = 5/2, which replaces gallium (MnGa2+) and is an ionized acceptor (A–) associated via an isotropic antiferromagnetic exchange interaction with a shallow hole (SH) with angular momentum J = 3/2. A complex system of energy levels of this complex in a magnetic field and the possibility of accurately determining exchange interactions from EPR spectra are analyzed. Another complex was investigated, in which an ionized acceptor MnGa2+ interacts with a localized hole center in the form of a diamagnetic ion O2– replacing As. This complex, MnGa2+-OAs2-, is characterized by axial symmetry along the <111> axis of the cubic GaAs crystal and an anisotropic EPR spectrum. Due to the high Boltzmann factor, in our studies, the order of the fine structure spin levels of this complex was determined. The effect of the Boltzmann populations of the energy levels on the high-frequency EPR spectra was also demonstrated for the MnGa2+- SH complex.

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28

Bau, Nguyen Quang, Bui Dinh Hoi, and Tran Cong Phong. "Hall Effect on the Doped Semiconductor Superlattice with an In-plane Magnetic Field Under Influence of an Intense Electromagnetic Wave." Communications in Physics 24, no. 3S1 (2014): 45–50. http://dx.doi.org/10.15625/0868-3166/24/3s1/5135.

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The Hall effect is studied theoretically in a doped semiconductor superlattice (DSSL) subjected to a crossed dc electric field and magnetic field in the presence of an intense electromagnetic wave (EMW). By using the quantum kinetic equation for electrons interacting with acoustic phonons at low temperature, we obtain expressions for the magnetoresistance as well as the Hall coefficient in dependence on the external fields and characteristic parameters of the DSSL. Analytical results are numerically evaluated for the GaAs:Si/GaAs:Be DSSL. The dependence of the magnetoresistance on the magnetic field is consistent with the result obtained for some two-dimensional electron systems. The Hall coefficient depends weakly on the magnetic field and its value in the presence of the EMW is smaller than that of the case without EMW.

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29

Bau, Nguyen Quang, and Nguyen Van Hieu. "The quantum acoustoelectric current in a doped superlattice GaAs:Si/GaAs:Be." Superlattices and Microstructures 63 (November 2013): 121–30. http://dx.doi.org/10.1016/j.spmi.2013.08.026.

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30

Klimko, G. V., T. A. Komissarova, S. V. Sorokin, et al. "MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells." Technical Physics Letters 41, no. 9 (2015): 905–8. http://dx.doi.org/10.1134/s1063785015090229.

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31

Hang, Dao Thu, Nguyen Vu Nhan, and Nguyen Quang Bau. "Theoretical Study of the Magneto-Thermoelectric Effect in Doped Semiconductor Superlattices under the Influence of an Electromagnetic Wave by Using a Quantum Kinetic Equation." Key Engineering Materials 783 (October 2018): 93–102. http://dx.doi.org/10.4028/www.scientific.net/kem.783.93.

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By using a quantum kinetic equation for electrons, we studied magneto - thermoelectric effects in the doped semiconductor superlattice (DSSL) under the influence of electromagnetic waves (EMW). In case of the electron - acoustic phonon interaction, we have also figured out analytical expressions of the Ettingshausen coefficient (EC) in DSSL. These expressions are quite different from those which were obtained in the case of bulk semiconductors. The results are numerically calculated for the GaAs:Be/ GaAs:Si DSSL; we found that the EC depends on the characteristic parameters of EMW, temperature and the characteristic parameters of DSSL. The results are consistent with recently experimental observations but the EC is different from that in the bulk semiconductors or bismuth. In addition, the impact of the EMW on the Ettingshausen effect was also discovered. These are latest results which have been studied in terms of Ettingshausen effect in DSSL.

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32

Ruiz, Nazaret, Verónica Braza, Alicia Gonzalo, et al. "Control of Nitrogen Inhomogeneities in Type-I and Type-II GaAsSbN Superlattices for Solar Cell Devices." Nanomaterials 9, no. 4 (2019): 623. http://dx.doi.org/10.3390/nano9040623.

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Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present a strongly intensified luminescence and a significant external quantum efficiency (EQE), with respect to the GaAsSbN bulk layers. Despite the difficulties in characterizing the distribution of N in dilute III-V nitride alloys, in this work we have obtained N-compositional mappings before and after rapid thermal annealing (RTA) in both types of structures, by using a recent methodology based on the treatment of different scanning transmission electron microscopy (STEM) imaging configurations. Texture analysis by gray level co-occurrence matrixes (GLCM) and the measurement of the degree of clustering are used to compare and evaluate the compositional inhomogeneities of N. Comparison with the Sb maps shows that there is no spatial correlation between the N and Sb distributions. Our results reveal that a better homogeneity of N is obtained in type-I SLs, but at the expense of a higher tendency of Sb agglomeration, and the opposite occurs in type-II SLs. The RTA treatments improve the uniformity of N and Sb in both designs, with the annealed sample of type-II SLs being the most balanced structure for MJSCs.

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33

Watanabe, Kentaroh, Maki Ueno, Moriaki Wakaki, Osamu Abe, and Hiroshi Murakami. "GaAs:Se and GaAs:Te Photoconductive Detectors in 300 µm Region for Astronomical Observations." Japanese Journal of Applied Physics 47, no. 11 (2008): 8261–64. http://dx.doi.org/10.1143/jjap.47.8261.

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34

Mallik, K., S. Dhar, and S. Sinha. "A photoluminescence and photocapacitance study of GaAs:In and GaAs:Sb layers grown by liquid-phase epitaxy." Semiconductor Science and Technology 9, no. 9 (1994): 1649–53. http://dx.doi.org/10.1088/0268-1242/9/9/012.

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35

Wasik, D., M. Baj, J. Przybytek, T. Słupiński, and K. Kudyk. "Coexistence of DX and A1 States in Highly Doped GaAs:Ge, Te and GaAs:Si, Te." physica status solidi (b) 198, no. 1 (1996): 181–86. http://dx.doi.org/10.1002/pssb.2221980124.

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36

Robbie, D. A., R. S. Leigh, and M. J. L. Sangster. "Anharmonic interactions in bonds between impurities and host atoms in GaAs:C and GaAs:B." Physical Review B 56, no. 3 (1997): 1381–92. http://dx.doi.org/10.1103/physrevb.56.1381.

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37

Harmand, J. C., G. Ungaro, L. Largeau, and G. Le Roux. "Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN." Applied Physics Letters 77, no. 16 (2000): 2482–84. http://dx.doi.org/10.1063/1.1318228.

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38

Fujiwara, Yasufumi, Atsushi Koizumi, Kazuhiko Nakamura, Masato Suzuki, Yoshikazu Takeda та Masayoshi Tonouchi. "Behaviors of Nonequilibrium Carriers in Er, O-Codoped GaAs for 1.5μm Light-Emitting Devices with Extremely Stable Wavelength". Materials Science Forum 512 (квітень 2006): 159–64. http://dx.doi.org/10.4028/www.scientific.net/msf.512.159.

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We have fabricated GaInP/Er,O-codoped GaAs (GaAs:Er,O)/GaInP double heterostructure (DH) light-emitting diodes (LEDs) and successfully observed 1.5 µm electroluminescence (EL) due to an Er-2O center under forward bias at room temperature. Er excitation cross section by current injection decreased with increasing GaAs:Er,O active layer thickness, implying reduced diffusion length of injected carriers in the active layer. Carrier dynamics in GaAs:Er,O have also been investigated by means of a pump and probe reflection technique. Time-resolved reflectivity of GaAs:Er,O exhibited a characteristic dip after a steep decrease to negative in less than 10 ps. The analysis of the characteristic dip revealed short lifetime in range of ps for photoexcited carriers. The extremely short lifetime is quite coincident with the reduced diffusion length of injected carriers, and suggests that a trap induced by Er and O codoping would play an important role in dynamics of nonequilibrium carriers in GaAs:Er,O.

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39

Zhang, Yong, and A. Mascarenhas. "Isoelectronic impurity states in GaAs:N." Physical Review B 61, no. 23 (2000): 15562–64. http://dx.doi.org/10.1103/physrevb.61.15562.

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40

Krawczyk, S. K., A. Khoukh, R. Olier, A. Chabli, and E. Molva. "Indium exodiffusion in annealed GaAs:In crystals." Applied Physics Letters 49, no. 26 (1986): 1776–78. http://dx.doi.org/10.1063/1.97241.

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41

Cannelli, G., R. Cantelli, F. Cordero, et al. "Quantum diffusion of deuterium in GaAs:Zn." Solid State Communications 98, no. 10 (1996): 873–77. http://dx.doi.org/10.1016/0038-1098(96)00068-3.

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42

Галиев, Г. Б., Е. А. Климов, А. Н. Клочков, В. Б. Копылов та C. C. Пушкарев. "Электрофизические и фотолюминесцентные исследования сверхрешeток \LT-GaAs/GaAs : Si\, выращенных методом молекулярно-лучевой эпитаксии на подложках GaAs с ориентацией (100) и (111)А". Физика и техника полупроводников 53, № 2 (2019): 258. http://dx.doi.org/10.21883/ftp.2019.02.47110.8918.

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AbstractThe results of studying semiconductor structures proposed for the first time and grown, which combine the properties of LT-GaAs with p -type conductivity upon doping with Si, are presented. The structures are {LT-GaAs/GaAs:Si} superlattices, in which the LT-GaAs layers are grown at a low temperature (in the range 280–350°C) and the GaAs:Si layers at a higher temperature (470°C). The p -type conductivity upon doping with Si is provided by the use of GaAs(111)A substrates and the choice of the growth temperature and the ratio between As_4 and Ga fluxes. The hole concentration steadily decreases, as the growth temperature of LT-GaAs layers is lowered from 350 to 280°C, which is attributed to an increase in the roughness of interfaces between layers and to the formation of regions depleted of charge carriers at the interfaces between the GaAs:Si and LT-GaAS layers. The evolution of the photoluminescence spectra at 77 K under variations in the growth temperature of LT-GaAs is interpreted as a result of changes in the concentration of Ga_As and V _Ga point defects and Si_Ga– V _Ga, V _As–Si_As, and Si_As–Si_Ga complexes.

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43

SHARMA, DHEERAJ, UMESH GUPTA, and DEVENDRA MOHAN. "HOLOGRAM RECORDING AND ERASURE IN GaAs:Cr WITH SIMULTANEOUSLY APPLIED ELECTRIC AND MAGNETIC FIELDS." Journal of Nonlinear Optical Physics & Materials 21, no. 04 (2012): 1250053. http://dx.doi.org/10.1142/s0218863512500531.

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Externally applied fields play crucial role in the enhancement of space charge electric field (Esc) in photorefractive (PR) materials. Using band-charge transport model, Esc (~105V/m) is obtained in presence of externally applied dc electric (E0) and magnetic (B0) fields simultaneously. Numerical estimation of GaAs:Cr shows that in presence of externally applied fields (optimum value of E0 = 5 × 102 V/m and B0 = 640 gauss), diffraction efficiency ~90% can be observed. To further elaborate the above result, a typical behavior of recording and erasure of hologram with respect to time has been investigated. Result manifest that GaAs:Cr is efficient, ultrafast writing and erasing media for PR-grating.

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44

Greiffenberg, Dominic, Marie Andrä, Rebecca Barten, et al. "Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam." Sensors 21, no. 4 (2021): 1550. http://dx.doi.org/10.3390/s21041550.

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Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm2 regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 109 Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e− ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, lower noise, and more homogeneous effective pixel size. In a previous work, a hole lifetime of 1.4 ns for GaAs:Cr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called “crater effect” which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the “crater effect” is further elaborated by measuring GaAs:Cr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photon beam was used to illuminate well defined positions along the pixels in order to corroborate the findings from the previous work and to further characterize the consequences of the “crater effect” on the detector operation.

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Paschoal, W., Sandeep Kumar, D. Jacobsson, et al. "Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires." Applied Physics Letters 104, no. 15 (2014): 153112. http://dx.doi.org/10.1063/1.4870423.

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Li, Danlian, Qian Cao, Min Zuo, and Fei Xu. "Optimization of Green Fresh Food Logistics with Heterogeneous Fleet Vehicle Route Problem by Improved Genetic Algorithm." Sustainability 12, no. 5 (2020): 1946. http://dx.doi.org/10.3390/su12051946.

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In order to reduce the distribution cost of fresh food logistics and achieve the goal of green distribution at the same time, the Green Fresh Food Logistics with Heterogeneous Fleet Vehicle Route Problem (GFLHF-VRP) model is established. Based on the particularity of the model, an improved genetic algorithm called Genetic Algorithm with Adaptive Simulated Annealing Mutation (GAASAM) is proposed in which the mutation operation is upgraded to a simulated annealing mutation operation and its parameters are adjusted by the adaptive operation. The experimental results show that the proposed GAASAM can effectively solve the vehicle routing problem of the proposed model, achieve better performance than the genetic algorithm, and avoid falling into a local optimal trap. The distribution routes obtained by GAASAM are with lower total distribution cost, and achieve the goal of green distribution in which energy, fuel consumption and carbon emissions are reduced at the same time. On the other hand, the proposed GFLHF-VRP and GAASAM can provide a reliable distribution route plan for fresh food logistics enterprises with multiple types of distribution vehicles in real life, which can further reduce the distribution cost and achieve a greener and more environment-friendly distribution solution. The results of this study also provide a managerial method for fresh food logistics enterprises to effectively arrange the distribution work with more social responsibility.

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FONTHAL, G., L. E. TOBÓN, J. QUINTERO, N. PIRAQUIVE, and H. ARIZA-CALDERÓN. "THE HOT CARRIER TEMPERATURE AND THE IMPURITY BAND IN KANE'S THEORY FOR HEAVILY DOPED SEMICONDUCTOR PHOTOLUMINESCENCE ANALYSIS." Modern Physics Letters B 15, no. 17n19 (2001): 692–95. http://dx.doi.org/10.1142/s0217984901002312.

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We analyzed the photoluminescence (PL) spectra on heavily doped GaAs:Sn samples by Kane's theory including a Lorentzian, a Gaussian and the hot carrier temperature. The band gap, the Fermi level, and the Urbach tail were the fitting parameters. Good results were obtained when the theoretical and experimental values were compared for the three parameters. The Urbach energy magnitude and the topological disorder parameter increased when the impurity concentration augment. The average phononic participation was very close with the tabulated values. New information about a shoulder in the high energy side was obtained, too.

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Kashima, Koshiro, Atsuhiko Fukuyama, Yosuke Nakano, et al. "Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal." Materials Science Forum 725 (July 2012): 93–96. http://dx.doi.org/10.4028/www.scientific.net/msf.725.93.

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The temperature dependences of the piezoelectric photo-thermal (PPT) signals from unintentionally doped p-type GaAsN films grown on semi-insulating GaAs substrate were measured from 80 to 300 K. From the theoretical analysis based on the rate equation for the recombination of photo exited carriers to the localized levels, we identified five majority hole traps, P1-P5 in GaAsN films. Among them, estimated concentrations of the P3 and P5 traps increased with the nitrogen contents. Therefore, we concluded that these two traps were due to nitrogen-related recombination centers in GaAsN.

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Kütt, W., D. Bimberg, M. Maier, H. Kräutle, F. Köhl, and E. Tomzig. "Redistribution of Cr in GaAs:Cr and of V in GaAs:V after implantation of Si, Be, or B and annealing in a controlled atmosphere." Applied Physics Letters 46, no. 5 (1985): 489–91. http://dx.doi.org/10.1063/1.95567.

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Brion, Hans Georg, and Hans Siethoff. "Yield point of as-grown and predeformed GaAs:Zn." Journal of Applied Physics 84, no. 9 (1998): 4885–90. http://dx.doi.org/10.1063/1.368732.

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