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1

Kim, Kilyoung. "Super Collision Energy Transfer Studies in Single Collisions Between Vibrationally Hot Benzene Like Molecules and Ground State Bath Molecules: The Effect of Physical Properties of Donor and Bath Molecules on Super Collision Energy Transfer." BYU ScholarsArchive, 2011. https://scholarsarchive.byu.edu/etd/2497.

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This research is focused on single-collision energy transfer events between highly vibrationally excited benzene-like donor molecules and small bath molecules, CO2 and N2O in the vibrational ground level. Measuring how much energy is transferred from donors to bath molecules was accomplished by probing bath molecules scattered into specific-rotational states using a tunable Δv=0.0003 cm-1 solid state diode laser. The normalized energy transfer probability distribution function, P(E,E'), determined from energy gain information, is very useful in comparing collisional energy transfer efficiency
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2

Park, Jeongho. "Molecular Beam Epitaxy (MBE) Growth of Rare Earth Doped Gallium Nitride for Laser Diode Application." University of Cincinnati / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1148273402.

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3

Azarm, Ali, Paul Corkum, and Pavel Polynkin. "Optical gain in rotationally excited nitrogen molecular ions." AMER PHYSICAL SOC, 2017. http://hdl.handle.net/10150/626190.

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We pump low-pressure nitrogen gas with ionizing femtosecond laser pulses at 1.5 mu m wavelength. The resulting rotationally excited N-2(+) 2 molecular ions generate directional, forward-propagating stimulated and isotropic spontaneous emissions at 428 nmwavelength. Through high-resolution spectroscopy of these emissions, we quantify rotational population distributions in the upper and lower emission levels. We show that these distributions are shifted with respect to each other, which has a strong influence on the transient optical gain in this system. Although we find that electronic populati
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4

Britton, Mathew. "Isolating the gain in the nitrogen molecular cation." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/41238.

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The nitrogen molecular cation is a promising gain medium for the air laser, which could be a powerful tool for remote sensing applications. After nearly a decade of international scientific effort, there are still questions about the gain mechanisms. This thesis explores gain in the nitrogen molecular ion using an experimental configuration that isolates the generation of gain from uncontrolled effects. We use a narrow nitrogen gas jet in vacuum to minimize propagation distance and a probe pulse to measure gain. We first test the role of inelastic scattering during electron recollision as a
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5

Stephens, James M. "Gain characterization and donor molecule production for a proposed chemical laser system." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/31025.

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6

Du, Weiwei. "Development of new organic emissive materials for organic light-emitting diodes and organic laser applications." Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS215.

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Dans ce travail, de nouveaux matériaux émetteurs organiques ont été développés pour des applications dans le domaine des diodes électroluminescentes ou des lasers organiques. Tout d’abord, trois séries de molécules « through space » TADF (Fluorescence retardée activée thermiquement) à base de cœurs cyclophane ont été préparées avec succès. Leurs structures chimiques ont été caractérisées par résonnance magnétique nucléaire (RMN) et spectroscopie de masse haute résolution (HRMS). Leurs propriétés photophysiques ont été étudiées en solution et à l’état solide. Dans ces structures, le transfert d
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7

Li, Haixia. "Design and characterization of new pyridazine materials for OLEDs and OSLs applications." Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS227.

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Dans ce travail, de nouveaux matériaux émetteurs organiques ont été développés pour des applications dans le domaine des diodes électroluminescentes ou des lasers organiques. Tout d’abord, plusieurs molécules de type Donneur-Accepteur incorporant des cœurs azotés électrodéficients variés ont été préparées avec succès, leur design étant conçu dans le but d’obtenir des émetteurs TADF. Leurs propriétés photo-physiques ont été étudiées en solution et à l’état solide. Dans ces structures, le transfert de charge intramoléculaire est produit via des interactions intermoléculaires entre les groupement
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8

Panneerselvam, Nishanthi. "Exploring the sequence landscape of the model protein Rop to gain insights into sequence-stability relationship in proteins." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492735031524266.

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9

Wang, Yifan. "A Gain of Function Senescence Bypass Screen Identifies the Homeobox Transcription Factor DLX2 as a Regulator of ATM-P53 Signaling." Thesis, Harvard University, 2016. http://nrs.harvard.edu/urn-3:HUL.InstRepos:26718730.

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Senescence stimuli activate multiple tumor suppressor pathways to initiate cycle arrest and a differentiation program characteristic of senescent cells. We performed a two-stage, gain-of function screen to select for the genes whose enhanced expression can bypass replicative senescence. We uncovered multiple genes known to be involved in p53 and Rb regulation, ATM regulation and two components of the CST complex involved in preventing telomere erosion and additional genes such as REST and FOXO4 that have been implicated in aging. Among the new genes now implicated in senescence we identified D
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10

Assefa, Kebebew. "Phenotypic and molecular diversity in the Ethiopian cereal, tef [Eragrostis tef (Zucc.) Trotter] : implications on conservation and breeding /." Alnarp : Dept. of Crop Science, Swedish Univ. of Agricultural Sciences, 2003. http://epsilon.slu.se/a426-ab.html.

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11

Shen, Yu. "Neural Mechanisms of Gait Regulation and Olfactory Plasticity in Caenorhabditis elegans." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:14226051.

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One of the fundamental questions in biological science is to understand how the nervous system functions to generate behavior. The past decades have witnessed much progress in behavioral neuroscience, but it is often challenging to gain mechanistic insights at the molecular and cellular level. The small nervous system and experimental accessibility of the nematode Caenorhabditis elegans offer an opportunity to study neural mechanisms underlying behavior in greater detail. Because many of the genes and proteins are conserved across species, studies in C. elegans provide useful information to th
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12

Rosvall, Ola. "Enhancing gain from long-term forest tree breeding while conserving genetic diversity /." Umeå : Swedish Univ. of Agricultural Sciences (Sveriges lantbruksuniv.), 1999. http://epsilon.slu.se/avh/1999/91-576-5643-6.pdf.

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13

Godavarty, Anuradha. "Fluorescence enhanced optical tomography on breast phantoms with measurements using a gain modulated intensified CCD imaging system." Texas A&M University, 2003. http://hdl.handle.net/1969.1/2184.

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Fluorescence-enhanced optical imaging using near-infrared (NIR) light developed for in-vivo molecular targeting and reporting of cancer provides promising opportunities for diagnostic imaging. However, prior to the administration of unproven contrast agents, the benefits of fluorescence-enhanced optical imaging must be assessed in feasibility phantom studies. A novel intensified charge-coupled device (ICCD) imaging system has been developed to perform 3-D fluorescence tomographic imaging in the frequency-domain using near-infrared contrast agents. This study is unique since it (i) employs
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14

Howard, C. Bradley Howard. "Development of gain-of-function reporters to probe trans-editing of misacylated tRNA in vivo." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469118488.

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15

Kapasi, Purvi. "An Insight into GAIT Complex Mediated Translational Silencing." Cleveland State University / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=csu1232567504.

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16

Miguez, Andrés. "Positional control of oligodendrocyte development : Role of hox homeoproteins and Tag-1 cell adhesion molecule." Paris 6, 2010. http://www.theses.fr/2010PA066309.

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Les oligodendrocytes sont les cellules myélinisantes du système nerveux central. La gaine de myéline ainsi que l’oligodendrocyte qui la synthétise, sont les cibles du processus pathologique dans la Sclérose En Plaques (SEP), une maladie neurologique autoimmune et démyélinisante du système nerveux central. Les progrès thérapeutiques des 10-15 dernières années ont permis une meilleure prise en charge de la composante autoimmune de la maladie. En revanche nous sommes toujours aussi démuni pour corriger la composante démyélinisante, qui pourtant est la cause du handicap sensori-moteur permanent. D
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17

Peng, Jinrong. "Genetic and molecular analysis of the gai, ga4 and fhy2 mutations of Arabidopsis." Thesis, University of East Anglia, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359324.

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18

He, Lei. "III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy." VCU Scholars Compass, 2004. http://scholarscompass.vcu.edu/etd/1019.

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III-nitride semiconductors are of great interest owing to their commercial and military applications due to their optoelectronic and mechanical properties. They have been synthesized successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method owing to precise control of growth parameters, which significantly affect the film properties, composition, and thickness. However, the understanding of growth mechanism of III-nitride materials grown in this growth regime is far from being complete.In this dissertation, GaN and AIGaN growth mech
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19

Bougacha, Nadia. "Molecular characterization and functional analysis of poor-prognosis B-cell leukemias." Thesis, Sorbonne université, 2019. http://www.theses.fr/2019SORUS146.

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L’objectif général de cette thèse a été d’approfondir la compréhension actuelle des bases génétiques et de la pathophysiologie de leucémies B agressives, à savoir deux sous-types de leucémie lymphoïde chronique (LLC) et la leucémie prolymphocytaire B (LPLB). La LLC, qui est la forme de leucémie adulte la plus fréquente en Occident, est caractérisée par une accumulation de lymphocytes B monoclonaux (CD20+, CD5+ and CD23+) dans le sang périphérique, la moelle osseuse ainsi que les organes lymphoïdes secondaires. La LLC est une maladie très hétérogène, où un large panel d’altérations génétiques m
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20

Michaud, Amadeo. "III-V / Silicon tandem solar cell grown with molecular beam epitaxy." Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS247.

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Le photovoltaïque terrestre est actuellement largement dominé par des dispositifs à base de Silicium. La limite théorique d’efficacité de photoconversion pour les cellules solaires en silicium est de l’ordre de 29%. Avec des modules photovoltaïques ayant une efficacité de 26.3% sur le marché, la filière Si est à un niveau de maturité avancée et exploite déjà la quasi-totalité du potentiel de ce genre de cellule solaires. Le travail exposé ici traite d’une autre voie d’amélioration de l’efficacité de conversion des dispositifs photovoltaïques. En effet, les cellules solaires tandem, assemblées
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21

Schiaber, Ziani de Souza. "Nanoestruturas de GaN crescidas pelas técnicas de epitaxia por magnetron sputtering e epitaxia por feixe molecular." Universidade Estadual Paulista (UNESP), 2016. http://hdl.handle.net/11449/138237.

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Submitted by Ziani DE SOUZA SCHIABER (zianisouza@yahoo.com.br) on 2016-05-02T20:43:07Z No. of bitstreams: 1 Tese_Final_Ziani_Schiaber.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc (MD5)<br>Approved for entry into archive by Felipe Augusto Arakaki (arakaki@reitoria.unesp.br) on 2016-05-04T19:24:06Z (GMT) No. of bitstreams: 1 schiaber_zs_dr_bauru.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc (MD5)<br>Made available in DSpace on 2016-05-04T19:24:06Z (GMT). No. of bitstreams: 1 schiaber_zs_dr_bauru.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc
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22

Yu, Kuan-Hung. "Optical Spectroscopy of GaN/Al(Ga)N Quantum Dots Grown by Molecular Beam Epitaxy." Thesis, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-19821.

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<p>GaN quantum dots grown by molecular beam epitaxy are examined by micro-photoluminescence. The exciton and biexciton emission are identified successfully by power-dependence measurement. With two different samples, it can be deduced that the linewidth of the peaks is narrower in the thicker deposited layer of GaN. The size of the GaN quantum dots is responsible for the binding energy of biexciton (E<sup>b</sup><sub>XX</sub>); E<sup>b</sup><sub>XX </sub>decreases with increasing size of GaN quantum dots. Under polarization studies, polar plot shows that emission is strongly linear polarized.
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23

Poddar, Darshana Ph D. "Study of Role of Ribosomal Protein L13a in Resolving Inflammation." Cleveland State University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=csu1400587453.

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24

Zettler, Johannes Kristian. "Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/18926.

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Dichte Ensembles aus GaN-Nanodrähten können in der Molekularstrahlepitaxie mithilfe eines selbstinduzierten Prozesses sowohl auf kristallinen als auch amorphen Substraten gezüchtet werden. Aufgrund der Natur selbstgesteuerter Prozesse ist dabei die Kontrolle über viele wichtige Ensembleparameter jedoch eingeschränkt. Die Arbeit adressiert genau diese Einschränkungen bei der Kristallzucht selbstinduzierter GaN-Nanodrähte. Konkret sind das Limitierungen bezüglich der Nanodraht-Durchmesser, die Nanodraht-Anzahl-/Flächendichte, der Koaleszenzgrad sowie die maximal realisierbare Wachstumstemperatu
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25

Kour, Ravinder. "Insights into the ribosomal, extra-ribosomal and developmental role of RP L13a in mammalian model." Cleveland State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=csu1572548728931568.

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26

Clark, Kendal. "Ultra High Vacuum Low Temperature Scanning Tunneling Microscope for Single Atom Manipulation on Molecular Beam Epitaxy Grown Samples." Ohio University / OhioLINK, 2005. http://www.ohiolink.edu/etd/view.cgi?ohiou1125611713.

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27

Müllhäuser, Jochen R. "Properties of Zincblende GaN and (In,Ga,Al)N Heterostructures grown by Molecular Beam Epitaxy." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 1999. http://dx.doi.org/10.18452/14382.

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Während über hexagonales (alpha) GaN zum ersten Mal 1932 berichtet wurde, gelang erst 1989 die Synthese einer mit Molekularstrahlepitaxie (MBE) auf 3C-SiC epitaktisch gewachsenen, metastabilen kubischen (eta) GaN Schicht. Die vorliegende Arbeit befaßt sich mit der Herstellung der Verbindungen eta-(In,Ga,Al)N mittels RF-Plasma unterstützter MBE auf GaAs(001) und den mikrostrukturellen sowie optischen Eigenschaften dieses neuartigen Materialsystems. Im Vergleich zur hexagonalen bietet die kubische Kristallstruktur auf Grund ihrer höheren Symmetrie potentielle Vorteile für die Anwendung in optisc
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28

Ye, Wei. "Nano-epitaxy modeling and design: from atomistic simulations to continuum methods." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50304.

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The dissertation starts from the understanding of dislocation dissipation mechanism due to the image force acting on the dislocation. This work implements a screw dislocation in solids with free surfaces by a novel finite element model, and then image forces of dislocations embedded in various shaped GaN nanorods are calculated. As surface stress could dramatically influence the behavior of nanostructures, this work has developed a novel analytical framework to solve the stress field of solids with dislocations and surface stress. It is successfully implemented in this framework for the case o
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29

Ajay, Akhil. "Nanofils de GaN/AlGaN pour les composants quantiques." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY030/document.

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Ce travail se concentre sur l'ingénierie Intersubband (ISB) des nanofils où nous avons conçu des hétérostructures de GaN / (Al, Ga) N intégrées dans un nanofil GaN pour le rendre optiquement actif dans la région spectrale infrarouge (IR), en utilisant un faisceau moléculaire assisté par plasma épitaxie comme méthode de synthèse. Les transitions ISB se réfèrent aux transitions d'énergie entre les niveaux confinés quantiques dans la bande de conduction de la nanostructure.Un contrôle précis des niveaux élevés de dopage est crucial pour les dispositifs ISB. Par conséquent, nous explorons Ge comme
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Parize, Julien. "Simulations numériques à l'échelle atomique des dommages induits par les radiations dans les semi-conducteurs." Electronic Thesis or Diss., Université de Toulouse (2023-....), 2025. http://www.theses.fr/2025TLSES016.

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Depuis les années 2010, l'exploration spatiale connaît un renouveau, porté par des entreprises privées rendant l'accès à l'espace plus abordable. Cependant, l'environnement spatial reste hostile, notamment à cause des rayons cosmiques galactiques et des éruptions solaires, qui endommagent les circuits électroniques des équipements spatiaux. La protection des technologies microélectroniques contre ces radiations est donc cruciale pour assurer la réussite des missions spatiales. Les rovers martiens, comme Curiosity et Perseverance, illustrent bien ces défis. Privés de l'atmosphère protectrice et
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31

Comyn, Rémi. "Développement de briques technologiques pour la co-intégration par l'épitaxie de transistors HEMTs AlGaN/GaN sur MOS silicium." Thesis, Université Côte d'Azur (ComUE), 2016. http://www.theses.fr/2016AZUR4098.

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L’intégration monolithique hétérogène de composants III-N sur silicium (Si) offre de nombreuses possibilités en termes d’applications. Cependant, gérer l’hétéroépitaxie de matériaux à paramètres de maille et coefficients de dilatation très différents, tout en évitant les contaminations, et concilier des températures optimales de procédé parfois très éloignées requière inévitablement certains compromis. Dans ce contexte, nous avons cherché à intégrer des transistors à haute mobilité électronique (HEMT) à base de nitrure de Gallium (GaN) sur substrat Si par épitaxie sous jets moléculaires (EJM)
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Fang, Zhihua. "N and p-type doping of GaN nanowires : from growth to electrical properties." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY007/document.

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Les nanostructures à base de nitrures d’éléments III suscitent un intérêt croissant, en raison de leurs propriétés singulières et de leurs applications technologiques potentielles, dans les diodes électroluminescentes (LED) notamment. La maîtrise et le contrôle du dopage de ces nanostructures est un enjeu crucial, mais difficile. A ce sujet, cette thèse apporte une contribution nouvelle, en explorant le processus de dopage de type n et p des nanofils (NFs) de GaN crus par épitaxie par jets moléculaires (EJM). En particulier, les propriétés électriques de ces structures ont été caractérisées pa
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33

Wölz, Martin. "Control of the emission wavelength of gallium nitride-based nanowire light-emitting diodes." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2013. http://dx.doi.org/10.18452/16753.

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Halbleiter-Nanosäulen (auch -Nanodrähte) werden als Baustein für Leuchtdioden (LEDs) untersucht. Herkömmliche LEDs aus Galliumnitrid (GaN) bestehen aus mehreren Kristallschichten auf einkristallinen Substraten. Ihr Leistungsvermögen wird durch Gitterfehlpassung und dadurch hervorgerufene Verspannung, piezoelektrische Felder und Kristallfehler beschränkt. GaN-Nanosäulen können ohne Kristallfehler auf Fremdsubstraten gezüchtet werden. Verspannung wird in Nanosäulen elastisch an der Oberfläche abgebaut, dadurch werden Kristallfehler und piezoelektrische Felder reduziert. In dieser Arbeit w
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34

Chmielewski, Daniel Joseph. "III-V Metamorphic Materials and Devices for Multijunction Solar Cells Grown via MBE and MOCVD." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1534707692114982.

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35

Zhang, Xin. "Growth and characterization of GaN/lnGaN nanowire heterostructures." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY107.

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Les nanostructures de nitrures d’éléments III sont considérées comme des candidats prometteurs visant à la réalisation de divers dispositifs innovants. Depuis quelques années, l'intérêt croissant des nano-LEDs basés sur l’InGaN a été relevé dans le domaine de l'éclairage et de l'affichage. Ce travail de thèse porte sur la croissance par épitaxie par jets moléculaires assistée plasma (PA-MBE) et sur la caractérisation d'hétérostructures InGaN/GaN à base de nanofils.Tout d'abord, un modèle de croissance cinétique de nanofils de nitrures d’éléments III a été établi, en vue d'une analyse en profon
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Ive, Tommy. "Growth and investigation of AlN/GaN and (Al,In)N/GaN based Bragg reflectors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15395.

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Die Synthese von AlN/GaN- und (Al,In)N/GaN-Braggreflektoren wird untersucht. Die Strukturen wurden mittels plasmaunterstützter Molekularstrahlepitaxie auf 6H-SiC(0001)-Substraten abgeschieden. Ferner wurde der Einfluß der Si-Dotierung auf die Oberflächenmorphologie sowie die strukturellen und elektrischen Eigenschaften der AlN/GaN-Braggreflektoren untersucht. Es wurden rißfreie Braggreflektoren mit einer hohen Reflektivität (R>99%) und einem bei 450 nm zentrierten Stopband erhalten. Die Si-dotierten Strukturen weisen eine ohmsche I-V-Charakteristik im gesamten Meßbereich sowie einen spezifisch
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37

Monavarian, Morteza. "Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations." VCU Scholars Compass, 2016. http://scholarscompass.vcu.edu/etd/4198.

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Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as th
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38

Rossner, Ulrike. "Epitaxie des nitrures de gallium et d'aluminium sur silicium par jets moléculaires : caractérisation structurale et optique." Université Joseph Fourier (Grenoble), 1995. http://www.theses.fr/1995GRE10181.

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Les nitrures de gallium et d'aluminium ont ete elabores par epitaxie par jets moleculaires (mbe) sur des substrats de silicium. La phase cubique de ces nitrures a ete obtenue sur le si(001). Elle est initiee par une carburation de la surface du silicium precedante a la croissance des nitrures: cette carburation permet de recouvrir completement la surface des substrats par des cristallites de sic cubique. La phase hexagonale du gan et de l'ain a ete observee sur le si(111). Pour la croissance du gan hexagonal, des couches tampons d'ain ont ete utilisees. Le nitrure d'aluminium a ete caracterise
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Arlery, Magali. "Etude par microscopie électronique à transmission de couches et structures semi-conductrices GaN/AlxGa(1-x)N." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10047.

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Nous presentons une etude structurale de depots epais de gan sur alumine et d'heterostructures gan / al#xga#1#-#xn de basse dimensionnalite. Les systemes etudies ont ete elabores par epitaxie par jet moleculaire (mbe) ou par depot en phase vapeur d'organo-metalliques (mocvd). La technique d'investigation est la microscopie electronique a transmission, utilisee en modes conventionnel, haute resolution et faisceau convergent. La premiere partie de l'etude traite de la croissance optimisee de couches de gan sur substrat d'alumine. La polarite des depots est le parametre clef de cette croissance.
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40

Widmann, Frédéric. "Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10234.

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Ce travail a porte sur la croissance epitaxiale des nitrures d'elements iii gan, aln, et inn, en utilisant l'epitaxie par jets moleculaires assistee par plasma d'azote. Nous avons optimise les premiers stades de la croissance de gan ou aln sur substrat al#2o#3 (0001). Le processus utilise consiste a nitrurer la surface du substrat a l'aide du plasma d'azote, afin de la transformer en aln, puis a faire croitre une couche tampon d'aln ou de gan a basse temperature, avant de reprendre la croissance de gan ou aln a haute temperature (680 a 750c). Nous avons en particulier etudie les proprietes d'u
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41

Fiorini, Claudia. "“Molecular mechanisms induced by p53 reactivating molecules in p53 mutant pancreatic adenocarcinoma cell lines”." Doctoral thesis, 2014. http://hdl.handle.net/11562/706761.

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Le mutazioni del gene TP53, che compromettono la funzione trascrizionale di p53, si verificano in più del 50% dei tumori umani, tra cui l’adenocarcinoma pancreatico, e rendono le cellule tumorali più resistenti alle terapie convenzionali. Negli ultimi anni, molti sforzi sono stati indirizzati per identificare molecole-riattivanti la proteina p53 mutata ri-conferendole una conformazione wild-type e attiva trascrizionalmente. Nella presente tesi di Dottorato, dimostriamo che due di queste molecole, CP-31398 e RITA, possono indurre inibizione della crescita di cellule di adenocarcinoma pancreati
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42

Chandrasekaran, Vasudevan. "Structure and ligand-based applications of molecular modeling to gain insights into the structural features of proteins and small molecules of biological interest." 2006. http://purl.galileo.usg.edu/uga%5Fetd/chandrasekaran%5Fvasudevan%5F200608%5Fphd.

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43

Sills, Gavin Rene'. "Molecular markers associated with gain from selection, and maternal phenotypic effects in Arabidopsis." 1994. http://catalog.hathitrust.org/api/volumes/oclc/31615068.html.

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44

Cardnell, Robert John Gunn. "In vivo analysis of gain-of-function mutations in the Drosophila eag-encoded potassium ion channel." Thesis, 2006. http://hdl.handle.net/1911/18879.

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Neuronal Na+ and K+ channels elicit currents in opposing directions and thus have opposing effects on neuronal excitability. Mutations in genes encoding Na+ or K+ channels often interact genetically, leading either to phenotypic suppression or enhancement for genes with opposing or similar effects on excitability respectively. For example, the effects of mutations in Shaker (Sh), which encodes a K+ channel subunit, are suppressed by loss of function mutations in the Na+ channel structural gene para, but enhanced by loss of function mutations in a second K + channel encoded by eag. Here I char
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Madhangi, M. "Functional characterization of WD40-repeat protein, WDR8, in Zebrafish to gain insight into its role in Isolated Microspherophakia." Thesis, 2017. https://etd.iisc.ac.in/handle/2005/5700.

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WD40-repeat (WDR) proteins are a family of proteins that are characterized by widespread occurrence, low level of sequence conservation, common structural conformation (β propeller structure) and functional diversity. They act as scaffolds for multi-protein complex assembly during cellular processes like DNA repair, cell division, apoptosis, etc. Chapter 1 introduces WDR proteins and reviews the various features that characterize this family of proteins. The functions and the significance of WDR proteins have been described and the importance of characterizing the WDR proteins of unknow
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46

Bhat, Thirumaleshwara N. "Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy." Thesis, 2012. https://etd.iisc.ac.in/handle/2005/2454.

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The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si heterojunctions properties. The thesis is divided in to seven different chapters. Chapter 1 gives a brief introduction on III-nitride materials, growth systems, substrates, possible device applications and technical background. Chapter 2 deals with experimental techniques including the details of PAMBE system used in the present work and characterization tools for II
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Bhat, Thirumaleshwara N. "Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy." Thesis, 2012. http://etd.iisc.ernet.in/handle/2005/2454.

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The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si heterojunctions properties. The thesis is divided in to seven different chapters. Chapter 1 gives a brief introduction on III-nitride materials, growth systems, substrates, possible device applications and technical background. Chapter 2 deals with experimental techniques including the details of PAMBE system used in the present work and characterization tools for III-
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Lin, Yeh-Fon, and 林業峰. "Molecular Dynamics Simulations to Gain Insights into the Structural Stability and Aggregation Behavior of the VEALYL and LYQLEN Peptides Derived from Human Insulin." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/jmn84r.

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碩士<br>國立臺北科技大學<br>生物科技研究所<br>97<br>The LYQLEN and VEALYL peptides from the A chain (residues 13-18) and B chain (residues 12-17) of insulin has been shown to form amyloid-like fibrils. Recently, the atomic structures of the LYQLEN and VEALYL oligomers have been determined by x-ray microcrystallography and reveal a dry, tightly self-complementing structure between the neighboringβ-sheet layers, termed as “steric zipper”. In this study, several molecular dynamics simulations with all-atom explicit water were conducted to investigate the structural stability and aggregation behavior of the LYQLEN
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(9183557), Amanpreet Kaur. "A Novel Maize Dwarf Resulting From a Gain-of-Function Mutation In a Glutamate Receptor Gene." Thesis, 2020.

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<p>Plant height is an important agronomic trait and a major target for crop improvement. Owing to the ease of detection and measurement of plant stature, as well as its high heritability, several height-related mutants have been reported in maize. The genes underlying a few of those mutants have also been identified, with a majority of them related to the biosynthesis or signaling of two key phytohormones - gibberellins (GAs) and brassinosteroids (BRs). However, most other maize dwarfing mutants, and especially those that result from gain-of-function mutations, remain uncharacterized. The pres
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Mohan, Lokesh. "III- Nitride Thin Films and Nanostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4297.

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This thesis focuses on studying heterostructures of GaN, Silicon and AlN. GaN nanostructures are grown on bare Si (111) with and without a GaN buffer layer and GaN film was grown on an AlN layer. Apart from the material characterization of the grown samples we have studied the carrier transport across GaN/Si and AlN/Si heterojunctions by means of the I-V-T curves from these junctions and we also studied the band alignment across GaN/AlN and AlN/Si heterojunctions by means of X-ray photoelectron spectroscopy. The thesis is divided in 7 chapters. The first chapter deals with general introducti
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