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Dissertations / Theses on the topic 'Galium'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

Palmer, Mark J. "Physiological studies on Galium aparine L." Thesis, Bangor University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357831.

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2

Ernst, Vera. "Zur Diversität von Galium aparine L.-Herkünften." [S.l. : s.n.], 2003. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10633970.

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3

Sinclair, H. "Galium aparine L. - a possible antipsoriatic agent." Thesis, University of Sunderland, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233215.

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4

Ferris, R. "Intraspecific variation among populations of Galium aparine L." Thesis, University of Reading, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384136.

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5

Colakoglu, Tahir. "The Growth And Characterization Of Galium Selenide Thin Films." Master's thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/4/1085240/index.pdf.

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GaSe thin films were deposited by thermal evaporation technique with and without Cd doping. X-ray analysis showed that the crystallinity increases in (1014) preferred orientation direction with annealing for doped and undoped films. The room temperature conductivity and mobility values of the samples were found to be for doped and undoped films in between 1.3&times<br>101 - 3.4&times<br>102 (&amp<br>#8486<br>-cm)-1, 1.2&times<br>10-6 - 1.5&times<br>10-6 (&amp<br>#8486<br>-cm)-1 and 5.9 &amp<br>#8211<br>20.9 (cm2/V.s) (for doped samples only), respectively. Due to the high resistivity of the un

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6

Li, Zhiying. "Microbridge tests on galium[sic] nitride and parylene-c thin films /." View abstract or full-text, 2010. http://library.ust.hk/cgi/db/thesis.pl?MECH%202010%20LI.

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7

Puntieri, Javier G. "Self-thinning of plant populations with particular reference to Galium aparine." Thesis, University of Oxford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293435.

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8

Gunter, Jesse Z. "Mechanisms of the Wurtzite to Rock Salt Phase Transitions in Galium Nitride." BYU ScholarsArchive, 2006. https://scholarsarchive.byu.edu/etd/880.

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We studied the wurtzite to rock salt phase transition in gallium nitride ( GaN ). Using the mapping algorithm of COMSUBS we found 435 possible mechanisms for this transition. We then used FIREBALL to do density functional theory calculations and found enthalpy barrier heights for the transition pathway. We used this to determine the mechanisms that are the most favorable for GaN. The most favorable mechanisms for GaN are those that break no bonds during the phase transition. The bond-preserving mechanisms involve bilayer sliding of (010) hexagonal plane in the plus or minus [100] hexagonal dir

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9

Machado, W. V. "Photo-transport in semiconductors containing deep level impurities." Thesis, University of Essex, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.353158.

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10

Zerdoum, Rachid. "Etude et réalisation de photopiles Ga(1-y)Al(y)As par épitaxie en phase liquide." Lyon, INSA, 1987. http://www.theses.fr/1987ISAL0027.

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Ce travail se place dans la perspective de la conversion multispectrale sous rayonnement solaire concentré et son objectif principal concernait la réalisation par épitaxie en phase liquide ‘EPL) de photopiles en Ga(1-y)Al(y)As (pour y=-0. 2 et 0. 28) en vue de leur association avec des photopiles Si dans un système dichroïque. Nous avons aussi rélisé des photopiles Ga(0. 65)Al(0. 35)As por les cpouplage GaAs+Ga(0. 65)Al(0. 35)As. Les pricipauux aspects de ce tragail sont : - Modélisation du système Ga(1-y)Al(y)As/Si et optimisation de la photopile Ga(0. 8)Al(0. 2)As en faisant vairer ses diffé

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11

Brown, Alison Louise. "Selective control of cleavers (Galium aparine) during the succession of arable field margins." Thesis, Manchester Metropolitan University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288035.

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12

Kamden, Jean. "Etude et conception de processeurs de signaux rapides intégrés sur arseniure de galium." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb376146486.

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13

Hill, Alan Leslie. "Intraspecific variation in response to herbicides with emphasis on the incidence and expression of fluroxypyr tolerance in European populations of galium aparine." Thesis, Queen's University Belfast, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334530.

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14

De, Toni Karen Lucia Gama. "Análises morfológicas e moleculares dos gêneros Galium L. e Relbunium (Endl.)Hook. f. (Rubieae-Rubiaceae) no Estado do Rio Grande do Sul-Brasil." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2005. http://hdl.handle.net/10183/7702.

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Desde o início da história taxonômica de Relbunium, muitos foram os trabalhos que enfatizaram sua autonomia e posição taxonômica. Atualmente, alguns estudos sugerem que as espécies pertencentes a Relbunium devam ser incluídas em uma seção do gênero Galium. Porém, recentes estudos moleculares na tribo Rubieae, destacam Galium como um grupo parafilético, e Relbunium como um gênero independente e monofilético. O problema taxonômico referente a Galium e Relbunium é de difícil solução, devido à ausência de estudos que integrem caracteres morfológicos, ecológicos e moleculares. No presente trabalho

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15

Chmelický, Martin. "Studium interakce iontů inertních plynů a galia s povrchy a tenkými vrstvami pomocí rozptylu nízkoenergiových iontů LEIS." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2019. http://www.nusl.cz/ntk/nusl-402556.

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In this thesis we study the interaction of helium, neon, argon and gallium ions with graphene. The graphene structure is contaminated with gallium ions during the graphene processing by focused gallium beam (FIB). The graphene properties are affected, e.g. reducing the electrical conductivity. The aim of this thesis is to verify the effect of selected ion beams on the graphene structure and select suitable ion beam for sputtering. Furthermore, the modification of standard heating stage used in LEIS instrument (Qtac 100) was designed and implemented. The LEIS instrument is connected to the comp

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16

Gunasekera, Taligama Gamaralalage Lalith Gamini. "Physiological studies on growth and development of weed species, with particular reference to Galium aparine L. (Cleavers) and Chromolaena odorata (L.) K. & R." Thesis, Bangor University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334737.

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17

Meunier, Geneviève. "Le gaillet mollugine (Galium mollugo L.) envahisseur : analyse de sa répartition et de ses impacts sur la diversité végétale au parc national du Bic." Thesis, Université Laval, 2008. http://www.theses.ulaval.ca/2008/25467/25467.pdf.

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18

Oliveira, Ricardo de Souza. "Estudo da marcação com Indio-111 e Gálio-68 de derivados da bombesina e avaliação das propriedades biológicas para aplicação em SPECT e PET." Universidade de São Paulo, 2014. http://www.teses.usp.br/teses/disponiveis/85/85131/tde-08122015-085946/.

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Receptores para o peptídeo liberador de gastrina (GRPr) são super expressos em vários tipos de células cancerígenas, incluindo câncer de mama e próstata. A Bombesina é um análogo do peptídeo GRP de mamíferos que se liga com alta especificidade e afinidade aos receptores do peptídeo liberador de gastrina (GRPr). Significantes pesquisas têm sido realizadas para desenvolver e radiomarcar um análogo da bombesina para diagnóstico de tumores de próstata e mama, utilizando-se técnicas de SPECT e PET, com radionuclídeos como 111In e 68Ga. O objetivo deste trabalho foi estudar a marcação com 111In de u

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19

Christal, Anna. "Intraspecific variation in seed dormancy and germination among populations of Stellaria media and Galium aparine : a modelling approach to investigate the effects of environmental and management factors." Thesis, University of Edinburgh, 2000. http://hdl.handle.net/1842/27792.

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This thesis aims to describe aspects of the ecology of two common winter annual weed species, <i>Stellaria media</i> and <i>Galium aparine</i>, in order to support the development of more sustainable weed control measures in arable crops. In arable crops, effective broad-leaved weed control tends to be associated with the early removal of weed seedlings and this may be facilitated by predictions of the timing and extent of weed seedling emergence. Seedling emergence can be divided into three stages: seed dormancy, seed germination and seedling pre-emergence growth. Seed dormancy and germinatio

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20

Santos, Júlio César dos. "Deposição e caracterização de filmes finos de GaAs e 'Al IND. 2''O IND. 3' para potencial utilizado em transistores /." Bauru : [s.n.], 2009. http://hdl.handle.net/11449/88451.

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Orientador: Luis Vicente de Andrade Scalvi<br>Banca: José Antonio Malmonge<br>Banca: José Humberto Dias da Silva<br>O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp<br>Resumo: Neste trabalho foi realizada a deposição através da técnica de evaporação resistiva, de filmes finos de GaAs (arseneto de gálio) e de Al (alumínio) com posterior oxidação deste último, formando 'Al IND. 2''O IND. 3' (óxido de alumínio ou alumina) e a caracterização dos filmes de GaAs e da heteroe

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21

Santos, Júlio César dos [UNESP]. "Deposição e caracterização de filmes finos de GaAs e 'Al IND. 2''O IND. 3' para potencial utilizado em transistores." Universidade Estadual Paulista (UNESP), 2009. http://hdl.handle.net/11449/88451.

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Made available in DSpace on 2014-06-11T19:23:28Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-08-24Bitstream added on 2014-06-13T20:50:23Z : No. of bitstreams: 1 santos_jc_me_bauru.pdf: 1909289 bytes, checksum: 46f1166eec4b53fcdc6e5fe6a3b31b70 (MD5)<br>Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)<br>Neste trabalho foi realizada a deposição através da técnica de evaporação resistiva, de filmes finos de GaAs (arseneto de gálio) e de Al (alumínio) com posterior oxidação deste último, formando 'Al IND. 2''O IND. 3' (óxido de alumínio ou alumina) e a caracterizaçã

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22

Faci, Salim. "Contrôle optique direct de dispositifs et circuits micro-ondes : application aux oscillateurs." Paris 6, 2007. http://www.theses.fr/2007PA066427.

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23

OLIVEIRA, RICARDO de S. "Estudo da marcação com Indio-111 e Gálio-68 de derivados da bombesina e avaliação das propriedades biológicas para aplicação em SPECT e PET." reponame:Repositório Institucional do IPEN, 2014. http://repositorio.ipen.br:8080/xmlui/handle/123456789/25357.

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Submitted by Claudinei Pracidelli (cpracide@ipen.br) on 2015-12-22T09:27:04Z No. of bitstreams: 0<br>Made available in DSpace on 2015-12-22T09:27:04Z (GMT). No. of bitstreams: 0<br>Dissertação (Mestrado em Tecnologia Nuclear)<br>IPEN/D<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

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24

Šamořil, Tomáš. "Aplikace fokusovaného iontového a elektronového svazku v nanotechnologiích." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2016. http://www.nusl.cz/ntk/nusl-234610.

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Nowadays, the systems that allow simultaneous employment of both focused electron and ion beams are very important tools in the field of micro- and nanotechnology. In addition to imaging and analysis, they can be used for lithography, which is applied for preparation of structures with required shapes and dimensions at the micrometer and nanometer scale. The first part of the thesis deals with one lithographic method – focused electron or ion beam induced deposition, for which a suitable adjustment of exposition parameters is searched and quality of deposited metal structures in terms of shape

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25

Beall, R. B. "Lattice defects in gallium phosphide and gallium arsenide." Thesis, University of Reading, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356129.

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26

Levasseur, Anne Marie. "Le gallium." Paris 5, 1988. http://www.theses.fr/1988PA05P036.

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27

Carvajal, Jara Diego Alejandro. "Simulações atomísticas do gálio super-resfriado." [s.n.], 2009. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278433.

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Orientador: Maurice de Koning<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin<br>Made available in DSpace on 2018-08-13T12:16:33Z (GMT). No. of bitstreams: 1 CarvajalJara_DiegoAlejandro_M.pdf: 4649880 bytes, checksum: d014cd5c835938e4643e478fa70353be (MD5) Previous issue date: 2009<br>Resumo: Recentemente tem sido proposta a existência de uma transição líquido-líquido em substâncias puras com o propósito de explicar alguns comportamentos anômalos como os incrementos de funções resposta (compressibilidade isotérmica, coeficiente de expansão té

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28

Li, Ting. "Gallium nitride and aluminum gallium nitride-based ultraviolet photodetectors /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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29

Ma, Shun-kit Martin. "The two gallium vacancy-related defects in undoped gallium antimonide." Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31319658.

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30

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t

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31

Ma, Shun-kit Martin, and 馬信傑. "The two gallium vacancy-related defects in undoped gallium antimonide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B31319658.

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32

Shah, Syed Hassan. "Study of nonlinear optical properties of indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide self-assembled quantum dots." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 97 p, 2008. http://proquest.umi.com/pqdweb?did=1460350251&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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33

Tsai, Cheng-Hung. "Photoluminescence of gallium phosphide and indium gallium phosphide doped with rare-earths." Ohio : Ohio University, 2000. http://www.ohiolink.edu/etd/view.cgi?ohiou1173207968.

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34

Cheng, Chung-choi, and 鄭仲材. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278577.

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35

Joyce, Timothy Bruce Frank. "The growth of gallium arsenide and gallium arsenide by chemical beam epitaxy." Thesis, University of Liverpool, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240620.

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36

Cheng, Chung-choi. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278577.

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37

Popa, Laura C. "Gallium nitride MEMS resonators." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99296.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2015.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 187-206).<br>As a wide band-gap semiconductor, with large breakdown fields and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low elastic losses. Together with a strong piezoelectric coupling, these q

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38

Shi, Yushan. "X-ray structural studies of heteroepitaxy of gallium-indium arsenide on gallium arsenide." Thesis, McGill University, 1992. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=39367.

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This thesis presents the techniques and results of our x-ray structural studies of strained Ga$ sb{1-x}$In$ sb{x}$As epilayers grown on GaAs (001) by metallorganic chemical vapor deposition.<br>By combining conventional x-ray techniques with newly developed glancing incidence and reflectivity measurements, we study both the out-of-plane and the in-plane structure. We also obtain direct information on the mechanisms of the structural relaxation which occurs in these systems. The techniques we have used are based on using a conventional x-ray source and could be widely used to characterize and s

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39

Mahajumi, Abu Syed. "Type-II gallium antimonide quantum dots in gallium arsenide single junction solar cells." Thesis, Lancaster University, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.658211.

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The novel idea of GaSb quantum dots (QDs)1 quantum rings (QRs) stacked layers single junction solar cells have been investigated for the examination and enhancement of the infrared photo response. Initially the investigation used photoluminescence to probe the optical properties of a type-II material interface between GaSb/GaAs using optimum growth temperature for QDs/QRs with two different growth modes (Stranski-Krastanow (SK) and exchange growth); and two different GaSb deposition thickness (1.5ML and 2.IML). The photoluminescence spectra of the stacked epilayers confirmed that the dominant

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40

Tang, Shun. "Cycloisomérisations catalysées par les sels du gallium et les complexes NHC-Gallium(III)." Thesis, Paris 11, 2013. http://www.theses.fr/2013PA112271.

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Afin de développer des méthodes alternatives à l'activation de systèmes Pi en catalyse homogène par des métaux nobles coûteux et toxiques, nous nous sommes focalisés sur des complexes métalliques et plus particulièrement ceux de la colonne du group XIII. Cette thèse approche une contribution à ce champ d'études, et nous nous sommes particulièrement concentrés sur la chimie de gallium.Trois principaux aspects ont été étudiés dans ce manuscrit: la réactivité des halogénures de gallium(III), des complexes bien définis de gallium (III) portant carbènes N- hétérocycliques (NHCs), et leur activation

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41

Harris, Brandon Eric. "Few cycle pulse laser induced damage studies of gallium oxide and gallium nitride." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1556891689968541.

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42

Allums, Kimberly K. "Proton radiation and thermal stabilty [sic] of gallium nitride and gallium nitride devices." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013123.

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43

Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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44

Guo, Wei. "Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE." View abstract/electronic edition; access limited to Brown University users, 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3318323.

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45

Jeffery, Arvi Denbigh 1960. "MEASUREMENT AND MODELING OF THE NONLINEAR ABSORPTION AND REFRACTIVE INDEX OF BULK GALLIUM-ARSENIDE AND GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE MULTIPLE-QUANTUM-WELLS." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276435.

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46

Frigge, Steffen. "Roentgenstrukturuntersuchungen an den fluessigen Entmischungssystemen Wismut-Gallium und Blei-Gallium sowie an deren Randkomponenten." Doctoral thesis, Universitätsbibliothek Chemnitz, 1997. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-199700343.

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Vorgestellt werden temperatur- und konzentrationsabhaengige Roentgenstrukturuntersuchungen an zwei fluessigen monotektischen Systemen mit Mischungsluecke im fluessigen Zustand (Wismut-Gallium und Blei-Gallium) und an deren Randkomponenten (Ga, Pb, Bi). Besonders sorgfaeltig wurde der Temperaturbereich in der Naehe der Binodalen untersucht. Die Entmischung ist zweifelsfrei durch Verschiebungen der Maxima von Strukturfaktor und Paarkorrelationsfunktion detektierbar. Vergleiche mit Modellrechunugen lassen den Schluss zu, dass in beiden Legierungssystemen Entmischungstendenz herscht. In beiden Sy

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47

Rinzan, Mohamed Buhary. "Threshold extension of gallium arsenide/aluminum gallium arsenide terahetrz detectors and switching in heterostructures." unrestricted, 2006. http://etd.gsu.edu/theses/available/etd-10102006-204618/.

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Thesis (Ph. D.)--Georgia State University, 2006.<br>Title from title screen. Unil Perera, committee chair; Donald Edwards, Gennady Cymbaluyk, Mark Stockman, Nikolaus Dietz, Paul Wiita, committee members. Electronic text (348, 24-32 p. : ill.) : digital, PDF file. Description based on contents viewed June 8, 2007. Includes bibliographical references (p. 24-30, second sequence).

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48

Anderson, David Richard. "Phonon-limited electron transport in gallium nitride and gallium nitride-based heterostructures, 1760-1851." Thesis, University of York, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.270104.

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49

Unal, Ozer. "Interface studies in silicon nitride/silicon carbide and gallium indium arsenide/gallium arsenide systems." Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1059501714.

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50

Frigge, Steffen. "Röntgenstrukturuntersuchungen an den flüssigen Entmischungssystemen Wismut-Gallium und Blei-Gallium sowie an deren Randkomponenten." [S.l. : s.n.], 1997. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10324533.

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