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Journal articles on the topic 'Gallium antimoniure'

Author: Grafiati

Published: 4 June 2021

Last updated: 10 February 2022

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1

Drygaś, Mariusz, Piotr Jeleń, Mirosław M. Bućko, Zbigniew Olejniczak, and Jerzy F. Janik. "Ammonolytical conversion of microcrystalline gallium antimonide GaSb to nanocrystalline gallium nitride GaN: thermodynamics vs. topochemistry." RSC Advances 5, no. 100 (2015): 82576–86. http://dx.doi.org/10.1039/c5ra16868f.

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Reaction of microcrystalline powders of gallium antimonide GaSb with ammonia afforded in one step high yields of nanocrystalline powders of the semiconductor gallium nitride GaN. The product was made as a mixture of the cubic and hexagonal polytypes.

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2

Demishev, S. V. "HOPPING TRANSPORT IN GALLIUM ANTIMONIDE." International Journal of Modern Physics B 08, no. 07 (March 30, 1994): 865–73. http://dx.doi.org/10.1142/s0217979294000403.

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This report summarizes a study of hopping transport in doped crystalline and amorphous gallium antimonide. The experimental results demonstrate the importance of short-range correlations rather than Coulomb ones. Anomalous behaviour of the Hall coefficient and the thermoelectric power is described.

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3

Conibeer, G. J., Arthur F. W. Willoughby, C. M. Hardingham, and V. K. M. Sharma. "Zinc Diffusion in Gallium Antimonide." Materials Science Forum 143-147 (October 1993): 1427–32. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.1427.

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4

Heller, M. W., and R. G. Hamerly. "Hole transport in gallium antimonide." Journal of Applied Physics 57, no. 10 (May 15, 1985): 4626–32. http://dx.doi.org/10.1063/1.335372.

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5

Milnes, A. G., and A. Y. Polyakov. "Gallium antimonide device related properties." Solid-State Electronics 36, no. 6 (June 1993): 803–18. http://dx.doi.org/10.1016/0038-1101(93)90002-8.

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6

Gubanov, V. A., C. Y. Fong, and C. Boekema. "Magnetic Impurities in Gallium Antimonide." physica status solidi (b) 218, no. 2 (April 2000): 599–613. http://dx.doi.org/10.1002/1521-3951(200004)218:2<599::aid-pssb599>3.0.co;2-j.

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7

Plaza, J. L., P. Hidalgo, J. Piqueras, and E. Diéguez. "Estudio de la incorporación de iones de Er y Nd en galio antimonio crecido por el método Bridgman." Boletín de la Sociedad Española de Cerámica y Vidrio 39, no. 4 (August 30, 2000): 463–67. http://dx.doi.org/10.3989/cyv.2000.v39.i4.799.

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8

Schulz, Stephan, Leonardo Martinez, and Jean L. Ross. "Synthesis and characterisation of gallium antimonide nanoparticles: reaction between tris (trimethylsilyl)antimonide and gallium trichloride." Advanced Materials for Optics and Electronics 6, no. 4 (July 1996): 185–89. http://dx.doi.org/10.1002/(sici)1099-0712(199607)6:4<185::aid-amo237>3.0.co;2-8.

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9

Udayashankar, N. K., and H. L. Bhat. "Growth and characterization of indium antimonide and gallium antimonide crystals." Bulletin of Materials Science 24, no. 5 (October 2001): 445–53. http://dx.doi.org/10.1007/bf02706714.

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10

Akinlami, J. O. "Optical Propertis of Gallium Antimonide GaSb." Research Journal of Physics 8, no. 1 (January 1, 2014): 17–27. http://dx.doi.org/10.3923/rjp.2014.17.27.

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11

Baldwin, R. A., E. E. Foos, and R. L. Wells. "Facile preparation of nanocrystalline gallium antimonide." Materials Research Bulletin 32, no. 2 (February 1997): 159–63. http://dx.doi.org/10.1016/s0025-5408(96)00187-0.

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12

Dutta, P. S., K. S. Sangunni, H. L. Bhat, and Vikram Kumar. "Sulphur passivation of gallium antimonide surfaces." Applied Physics Letters 65, no. 13 (September 26, 1994): 1695–97. http://dx.doi.org/10.1063/1.112889.

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13

Andreev, V. M., S. V. Sorokina, N. Kh Timoshina, V. P. Khvostikov, and M. Z. Shvarts. "Solar cells based on gallium antimonide." Semiconductors 43, no. 5 (May 2009): 668–71. http://dx.doi.org/10.1134/s1063782609050236.

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14

Khvostikov, V. P., S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, A. V. Malievskaya, A. S. Vlasov, M. Z. Shvarts, N. Kh Timoshina, and V. M. Andreev. "Thermophotovoltaic generators based on gallium antimonide." Semiconductors 44, no. 2 (February 2010): 255–62. http://dx.doi.org/10.1134/s1063782610020223.

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15

Su, Y. K., K. J. Gan, F. S. Juang, and J. S. Hwang. "Characterization of Si-implanted gallium antimonide." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 55, no. 1-4 (April 1991): 794–97. http://dx.doi.org/10.1016/0168-583x(91)96282-p.

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16

Dutta, P. S., K. S. R. Koteswara Rao, H. L. Bhat, and V. Kumar. "Photoluminescence studies in bulk gallium antimonide." Applied Physics A: Materials Science & Processing 61, no. 2 (July 1, 1995): 149–52. http://dx.doi.org/10.1007/s003390050182.

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17

Dutta, P. S., K. S. R. Koteswara Rao, H. L. Bhat, and V. Kumar. "Photoluminescence studies in bulk gallium antimonide." Applied Physics A Materials Science and Processing 61, no. 2 (August 1995): 149–52. http://dx.doi.org/10.1007/bf01538381.

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18

Levin, R. V., I. V. Fedorov, A. S. Vlasov, P. N. Brunkov, and B. V. Pushnyy. "Smoothing the Surface of Gallium Antimonide." Technical Physics Letters 46, no. 12 (December 2020): 1203–5. http://dx.doi.org/10.1134/s1063785020120123.

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19

SCHULZ, S., L. MARTINEZ, and J. L. ROSS. "ChemInform Abstract: Synthesis and Characterization of Gallium Antimonide Nanoparticles: Reaction Between Tris(trimethylsilyl)antimonide and Gallium Trichloride." ChemInform 28, no. 1 (August 4, 2010): no. http://dx.doi.org/10.1002/chin.199701309.

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20

Antonyshyn, Iryna, Olga Zhak, Stepan Oryshchyn, Volodymyr Babizhetskyy, Constantin Hoch, and Lev Aksel’rud. "Crystal Structure of the New Ternary Antimonide Ho5GaSb3." Zeitschrift für Naturforschung B 64, no. 8 (August 1, 2009): 909–14. http://dx.doi.org/10.1515/znb-2009-0806.

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The crystal structure of the new ternary antimonide Ho5GaSb3 has been determined from X-ray single-crystal data: space group Pnma, a = 7.9667(8), b = 15.128(2), c = 7.9616(8) Å , V = 959.5(3) Å3, Z = 4, RF = 0.059, Rw = 0.066 for 9020 reflections. The crystal structure of Ho5GaSb3 is a ternary derivative of the Sm5Ge4 structure type with partially ordered distribution of gallium and antimony atoms

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21

Bracht, H., S. P. Nicols, W. Walukiewicz, J. P. Silveira, F. Briones, and E. E. Haller. "Large disparity between gallium and antimony self-diffusion in gallium antimonide." Nature 408, no. 6808 (November 2000): 69–72. http://dx.doi.org/10.1038/35040526.

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22

Nicols, S. P., H. Bracht, M. Benamara, Z. Liliental-Weber, and E. E. Haller. "Mechanism of zinc diffusion in gallium antimonide." Physica B: Condensed Matter 308-310 (December 2001): 854–57. http://dx.doi.org/10.1016/s0921-4526(01)00913-9.

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23

Haug, A. "Auger recombination in quantum well gallium antimonide." Journal of Physics C: Solid State Physics 20, no. 9 (March 30, 1987): 1293–99. http://dx.doi.org/10.1088/0022-3719/20/9/018.

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24

Yan, Chang, Meng Zhao, Ju Gao, and Jinlei Yao. "Crystal structure of yttrium gallium antimonide, Y5Ga1.24Sb2.77." Zeitschrift für Kristallographie - New Crystal Structures 232, no. 2 (March 1, 2017): 331–32. http://dx.doi.org/10.1515/ncrs-2016-0312.

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25

Antonyshyn, Iryna, Yurii Prots, Stepan Oryshchyn, and Olga Zhak. "Crystal structure of lanthanum gallium antimonide, La12Ga3.26Sb24.02." Zeitschrift für Kristallographie - New Crystal Structures 225, no. 2 (June 2010): 229–30. http://dx.doi.org/10.1524/ncrs.2010.0099.

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26

Chidanandappa, J., K. Prasad, K. Balaraju, and V. N. Mani. "Preparation of Gallium Antimonide and its Characterization." Material Science Research India 12, no. 1 (June 25, 2015): 31–35. http://dx.doi.org/10.13005/msri/120106.

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In this study, directional freezing technique was employed to prepare pure gallium antimonide (GaSb) compound and purified samples were also been characterized to ascertain their and purity level and crystalline quality. The select impurities that were targeted for reduction include Al, Ca, Mg, Sb, Si, Sn, Ge, Cu, Fe, Zn and Ag. Controlled melting and freezing conditions were followed to homogenize the sample. A multi-pass directional freezing experiment on the pre-homogenized GaSb sample was conducted. The experimental conditions and parameters such as temperature gradient, sample tube movement rate, crucible geometry was established and optimized. The prepared homogenous GaSb sample was cleaned under contamination controlled conditions aided by 1000 class clean room and 100 class clean benches. Then the homogenous sample was loaded in the high quality quartz ampoule for further purification process. The sample containing ampoule was subjected to melting-freezing scheme with 20 passes cycle and the 4N+ pure GaSb crystalline ingot thus prepared. The purified and crystallised sample was characterized for its purity employing ICP-MS and crystalline quality through XRD techniques respectively and the results are discussed.

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27

Umnov, A. G. "Pressure-temperature diagram of gallium antimonide melt." Journal of Physics: Condensed Matter 6, no. 25 (June 20, 1994): 4625–30. http://dx.doi.org/10.1088/0953-8984/6/25/002.

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28

Conibeer, G. J., A. F. W. Willoughby, C. M. Hardingham, and V. K. M. Sharma. "Zinc diffusion in tellurium doped gallium antimonide." Journal of Electronic Materials 25, no. 7 (July 1996): 1108–12. http://dx.doi.org/10.1007/bf02659911.

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29

Conibeer, G. J., A. F. W. Willoughby, C. M. Hardingham, and V. K. M. Sharma. "Zinc diffusion in tellurium doped gallium antimonide." Optical Materials 6, no. 1-2 (July 1996): 21–25. http://dx.doi.org/10.1016/0925-3467(96)00021-3.

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30

HEINZ, C. "Low resistance metal-semiconductor contacts to gallium antimonide." International Journal of Electronics 64, no. 6 (June 1988): 923–27. http://dx.doi.org/10.1080/00207218808962867.

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31

Pramatarova, L. D., M. B. Baeva, and I. M. Yordanova. "Chemical and LP-etching of gallium antimonide substrates." Crystal Research and Technology 20, no. 9 (September 1985): 1253–59. http://dx.doi.org/10.1002/crat.2170200925.

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32

Moravec, F., V. Šestáková, B. Štěpánek, and V. Charvát. "Crystal growth and dislocation structure of gallium antimonide." Crystal Research and Technology 24, no. 3 (March 1989): 275–81. http://dx.doi.org/10.1002/crat.2170240307.

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33

Krier, A., M. K. Parry, and D. S. Lanchester. "Optoelectronic properties of gallium antimonide light emitting diodes." Semiconductor Science and Technology 6, no. 11 (November 1, 1991): 1066–71. http://dx.doi.org/10.1088/0268-1242/6/11/006.

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34

Bazhenov, N. L., E. I. Georgits�, L. M. Gutsulyak, R. I. Koshkodan, and V. A. Smirnov. "Carrier scattering mechanisms in manganese-doped gallium antimonide." Soviet Physics Journal 35, no. 1 (January 1992): 42–46. http://dx.doi.org/10.1007/bf01324983.

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35

Hjelt, Kari, and Turkka Tuomi. "Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide." Journal of Crystal Growth 170, no. 1-4 (January 1997): 794–98. http://dx.doi.org/10.1016/s0022-0248(96)00543-x.

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36

Goswami, Yogesh, Pranav Asthana, Shibir Basak, and Bahniman Ghosh. "Junctionless Tunnel Field Effect Transistor with Nonuniform Doping." International Journal of Nanoscience 14, no. 03 (May 19, 2015): 1450025. http://dx.doi.org/10.1142/s0219581x14500252.

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In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

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37

Schulz, Stephan, and Wilfried Assenmacher. "Temperature-controlled synthesis of gallium antimonide nanoparticles in solution." Materials Research Bulletin 34, no. 12-13 (September 1999): 2053–59. http://dx.doi.org/10.1016/s0025-5408(99)00212-3.

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38

Calero-Barney, S. J., W. Paxton, P. Ortiz, and M. K. Sunkara. "Gallium antimonide phosphide growth using Halide Vapor Phase Epitaxy." Solar Energy Materials and Solar Cells 209 (June 2020): 110440. http://dx.doi.org/10.1016/j.solmat.2020.110440.

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39

Jadhav, Vidya, S. K. Dubey, R. L. Dubey, S. Tripathi, A. D. Yadav, S. J. Gupta, T. K. Gundu Rao, and D. Kanjilal. "Study of swift (100MeV) Fe9+ ion irradiated gallium antimonide." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 266, no. 8 (April 2008): 1764–67. http://dx.doi.org/10.1016/j.nimb.2008.02.027.

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40

Kučera, M., and J. Novák. "Optical characterization of gallium antimonide highly doped with manganese." Journal of Physics and Chemistry of Solids 67, no. 8 (August 2006): 1724–30. http://dx.doi.org/10.1016/j.jpcs.2006.03.011.

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41

Homma, Yoshikazu. "Anomalous sputtering of gallium–antimonide under cesium‐ion bombardment." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 5, no. 3 (May 1987): 321–26. http://dx.doi.org/10.1116/1.574153.

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42

Li, X., L. Allen, C. Santeufemio, W. Goodhue, and C. Sung. "Nanocharacterization Of Gallium Antimonide Substrate Surface By Tem/Afm." Microscopy and Microanalysis 8, S02 (August 2002): 1258–59. http://dx.doi.org/10.1017/s1431927602104727.

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43

Khvostikov, V. P., S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, A. S. Vlasov, E. P. Rakova, and V. M. Andreev. "Examination of properties of epitaxial and bulk gallium antimonide." Semiconductors 42, no. 10 (September 30, 2008): 1179–86. http://dx.doi.org/10.1134/s1063782608100072.

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44

Dutta, P. S., K. S. Sangunni, H. L. Bhat, and Vikram Kumar. "Optical and electrical properties of hydrogen-passivated gallium antimonide." Physical Review B 51, no. 4 (January 15, 1995): 2153–58. http://dx.doi.org/10.1103/physrevb.51.2153.

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45

Shafa, Muhammad, Yi Pan, R. T. Ananth Kumar, and Adel Najar. "Photoresponse investigation of polycrystalline gallium antimonide (GaSb) thin films." AIP Advances 10, no. 3 (March 1, 2020): 035201. http://dx.doi.org/10.1063/1.5139056.

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46

Дружинин, А. А., И. И. Марьямова, А. П. Кутраков, Н. С. Лях-кагуй, A. A. Druzhinin, I. I. Maryamova, A. P. Kutrakov, and N. S. Liakh-kaguy. "Sensor of hydrostatic pressure based on gallium antimonide microcrystals." Технология и конструирование в электронной аппаратуре, no. 4 (August 2015): 19–23. http://dx.doi.org/10.15222/tkea2015.4.19.

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47

DeMuth, Joshua, Luyao Ma, Eli Fahrenkrug, and Stephen Maldonado. "Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide." Electrochimica Acta 197 (April 2016): 353–61. http://dx.doi.org/10.1016/j.electacta.2015.10.163.

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48

Walters, S. A., Ahsan M. Abbas, R. Dewsberry, and R. H. Williams. "Electrical characterization of metal/n-gallium antimonide (110) interfaces." Solid-State Electronics 34, no. 7 (July 1991): 798–800. http://dx.doi.org/10.1016/0038-1101(91)90021-p.

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49

Vaughan, E. I., N. Rahimi, G. Balakrishnan, and A. A. Hecht. "Thin-Film Gallium Antimonide for Room-Temperature Radiation Detection." Journal of Electronic Materials 44, no. 10 (June 23, 2015): 3288–93. http://dx.doi.org/10.1007/s11664-015-3869-3.

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50

Roy, U. N., and S. Basu. "Bulk growth of gallium antimonide crystals by Bridgman method." Bulletin of Materials Science 13, no. 1-2 (March 1990): 27–32. http://dx.doi.org/10.1007/bf02744853.

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