Log in

Relevant bibliographies by topics / Gallium arsenide field-effect transistor (GaAs FET)

Contents

Journal articles
Dissertations / Theses
Books
Conference papers

Academic literature on the topic 'Gallium arsenide field-effect transistor (GaAs FET)'

Author: Grafiati

Published: 4 June 2025

Last updated: 15 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Gallium arsenide field-effect transistor (GaAs FET).'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Gallium arsenide field-effect transistor (GaAs FET)"

1

Srivastava, Pooja, Aditi Upadhyaya, Shekhar Yadav, Chandra Mohan Singh Negi, and Arvind Kumar Singh. "Investigation of Short Channel Effects in Al0.30Ga0.60As Channel-Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications." Journal of Low Power Electronics and Applications 15, no. 1 (2025): 12. https://doi.org/10.3390/jlpea15010012.

Full text

Abstract:

In this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) was investigated. Junctions and doping concentration gradients are unavailable in JLFET. According to the results, the suggested device has a novel architecture that significantly enhances transistor performance while exhibiting a decreased vulnerability to short-channel effects (SCEs). The Atlas 3D device simulator has been used to analyze the proposed JLFET’s performance, especially for low-power applications for different channel lengths ranging from 10 nm to 60 nm with Al0.30Ga0.60As as III-V materials

APA, Harvard, Vancouver, ISO, and other styles

2

Hanreich, G., M. Mayer, M. Mündlein, and J. Nicolics. "Thermal Investigation of GaAs Microwave Power Transistors." Journal of Microelectronics and Electronic Packaging 1, no. 1 (2004): 1–8. http://dx.doi.org/10.4071/1551-4897-1.1.1.

Full text

Abstract:

The lower thermal conductivity of gallium arsenide (GaAs) compared to silicon (Si) requires a careful thermal design for optimizing device performance and reliability. In this paper a recently developed thermal simulation tool (TRESCOM II) is applied for investigating the thermal behavior of a heterojunction GaAs power field effect transistor (FET). Main features of the simulation tool are an easy model creation procedure and an efficient numerical solver. Moreover, the tool allows to consider temperature dependent material properties and temperature dependent boundary conditions. The investig

APA, Harvard, Vancouver, ISO, and other styles

3

Srivastava, Pooja, Aditi Upadhyaya, Shekhar Yadav, Chandra Mohan Singh Negi, and Arvind Kumar Singh. "Analysis of Nanoscale Short Channel Effects in Cylindrical Gate-All-Around Junctionless FETs and Performance Enhancement with GaAs and III–V Materials for Low-Power, High Frequency Applications." Electronics 14, no. 6 (2025): 1134. https://doi.org/10.3390/electronics14061134.

Full text

Abstract:

With the advancement of the semiconductor industry into the sub-10 nm regime, high-performance, low-energy transistors have become important, and gate-all-around junctionless field-effect transistors (GAA-JLFETs) have been developed to meet the demands. Silicon (Si) is still the dominant semiconductor material, but other potential alternatives, such as gallium arsenide (GaAs), provide much higher electron mobility, improving the drive current and switching speed. In this study, our contributions include a comparative analysis of Si and GaAs-based cylindrical GAA-JLFETs, using threshold voltage

APA, Harvard, Vancouver, ISO, and other styles

4

Ambika Bhuvaneswari, C., E. D. Kanmani Ruby, A. Manjunathan, R. Balamurugan, P. Jenopaul, and Belachew Zegale Tizazu. "Effects of Novel Material Field Effect Transistor for Heterogeneous Energy and Traffic-Aware Secure Applications." Advances in Materials Science and Engineering 2021 (October 13, 2021): 1–9. http://dx.doi.org/10.1155/2021/9085854.

Full text

Abstract:

The advent of the automated technological revolution has enabled the Internet of Things to rejuvenate, revolutionize, and redeem the services of sensors. The recent development of microsensor devices is distributed in a real-world terrestrial environment to sense various environmental changes. The energy consumption of the remotely deployed microsystems depends on its utilization efficiency. Improper utilization of sensor nodes’ heterogeneity could lead to uneven energy consumption and load imbalance across the network, which will degrade the performance of the network. The proposed heterogene

APA, Harvard, Vancouver, ISO, and other styles

5

Amine, Rachakh, El Abdellaoui Larbi, Zbitou Jamal, Errkik Ahmed, Tajmouati Abdelali, and Latrach Mohamed. "A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (2018): 3882–89. https://doi.org/10.11591/ijece.v8i5.pp3882-3889.

Full text

Abstract:

Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the powe

APA, Harvard, Vancouver, ISO, and other styles

6

Abhay, Chopde, Sadar Prashik, Sabale Ashutosh, Thite Piyush, and Zarkar Raghvendra. "Design of 2.4 GHz LNA of 400 MHz Bandwidth." International Journal of Innovative Technology and Exploring Engineering (IJITEE) 11, no. 3 (2022): 65–69. https://doi.org/10.35940/ijitee.C9760.0111322.

Full text

Abstract:

<strong>Abstract: </strong>Low Noise Amplifier (LNA) is the most important front-end block of the receiver. LNA’s Noise figure (NF) and Scattering Parameters affect the overall performance of the whole receiver circuit. Nowadays in the era of 5G technology, The quality of data that is being transmitted is increased. So there is a need for higher bandwidth to transfer data with higher speed. In such a case, communication blocks need an update. The research is carried out for the advancement of the LNA. The primary goal of LNA design is to lower the Noise Figure and return losses. The pape

APA, Harvard, Vancouver, ISO, and other styles

7

Chopde, Abhay, Prashik Sadar, Ashutosh Sabale, Piyush Thite, and Raghvendra Zarkar. "Design of 2.4 GHz LNA of 400 MHz Bandwidth." International Journal of Innovative Technology and Exploring Engineering 11, no. 3 (2022): 65–69. http://dx.doi.org/10.35940/ijitee.c9760.0111322.

Full text

Abstract:

Low Noise Amplifier (LNA) is the most important front-end block of the receiver. LNA’s Noise figure (NF) and Scattering Parameters affect the overall performance of the whole receiver circuit. Nowadays in the era of 5G technology, The quality of data that is being transmitted is increased. So there is a need for higher bandwidth to transfer data with higher speed. In such a case, communication blocks need an update. The research is carried out for the advancement of the LNA. The primary goal of LNA design is to lower the Noise Figure and return losses. The paper aims to design a 2.4 GHz LNA ha

APA, Harvard, Vancouver, ISO, and other styles

8

Amine, Rachakh, El Abdellaoui Larbi, Zbitou Jamal, Errkik Ahmed, Tajmouati Abdelali, and Latrach Mohamed. "A Two-stages Microstrip Power Amplifier for WiMAX Applications." TELKOMNIKA Telecommunication, Computing, Electronics and Control 16, no. 6 (2018): 2500–2506. https://doi.org/10.12928/TELKOMNIKA.v16i6.9338.

Full text

Abstract:

Amplification is one of the most basic and prevalent microwave analog circuit functions. Wherefore power amplifiers are the most important parts of electronic circuits. This is why the designing of power amplifiers is crucial in analog circuit designing. The intent of this work is to present an analysis and design of a microwave broadband power amplifier by using two stages topology. A two stages power amplifier using a distributed matching network for WiMAX applications is based on ATF-21170 (GaAs FET). The configuration aims to achieve high power gain amplifier with low return loss over a br

APA, Harvard, Vancouver, ISO, and other styles

9

Bogdanov S. A., Borisov A. A., Karpov S. N., Kuliyev M. V., Pashkovskii A. B., and Tereshkin E. V. "Nonlocal electron dynamics in GaN / AlGaN transistor heterostructures." Technical Physics Letters 48, no. 1 (2022): 84. http://dx.doi.org/10.21883/tpl.2022.01.52479.18996.

Full text

Abstract:

The processes of nonlocal electron heating in transistor heterostructures based on gallium nitride and gallium arsenide were compared. It has been shown that, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field as compared with pure bulk GaAs, while in GaN-based heterostructures the decrease in the drift velocity overshot does not exceed 30% in the studied cases. Keywords: Real space transfer, field-effect transistor, gain factor

APA, Harvard, Vancouver, ISO, and other styles

10

Jay., Paul R. "Gallium arsenide electronics in the marketplace." Canadian Journal of Physics 70, no. 10-11 (1992): 943–45. http://dx.doi.org/10.1139/p92-150.

Full text

Abstract:

The last few years have seen a significant emergence of real product applications using gallium arsenide metal semi-conductor field effect transistor technology. These applications range from large volume consumer markets based on small low-cost GaAs integrated circuits to high-end supercomputer products using very large scale integrated GaAs chips containing up to 50 000 logic gates. This situation represents substantial advances in many areas: materials technology, device and integrated circuit process technology, packaging and high speed testing, as well as appropriate system design to obta

APA, Harvard, Vancouver, ISO, and other styles

More sources

Dissertations / Theses on the topic "Gallium arsenide field-effect transistor (GaAs FET)"

1

Balakrishnan, V. R. "Some Studies On Interface States In GaAs MESFET's & HJFET's." Thesis, 1997. https://etd.iisc.ac.in/handle/2005/2141.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Balakrishnan, V. R. "Some Studies On Interface States In GaAs MESFET's & HJFET's." Thesis, 1997. http://etd.iisc.ernet.in/handle/2005/2141.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Books on the topic "Gallium arsenide field-effect transistor (GaAs FET)"

1

B, Walker John L., ed. High-power GaAs FET amplifiers. Artech House, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

2

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

3

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

4

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

5

Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Gallium arsenide field-effect transistor (GaAs FET)"

1

Lentine, A. L., L. M. F. Chirovsky, L. A. D’Asaro, et al. "Electrically addressed field effect transistor self electro-optic effect device (FET-SEED) amplified differential modulator array." In Spatial Light Modulators and Applications. Optica Publishing Group, 1993. http://dx.doi.org/10.1364/slma.1993.smd.2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Yadav, Shivani, and Sonam Rewari. "Dielectric Modulated Gallium-Arsenide Gate-All-Around Engineered Field Effect Transistor (GaAs-GAAE-FET) Biosensor for Breast Cancer Detection." In 2024 IEEE International Conference on Computing, Power and Communication Technologies (IC2PCT). IEEE, 2024. http://dx.doi.org/10.1109/ic2pct60090.2024.10486515.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Lovshenko, I. Yu, K. V. Korsak, and P. E. Novikov. "ADDITION TO COMPACT MODELS OF GALLIUM ARSENIDE DEVICE STRUCTURES TAKING INTO ACCOUNT THE CHANGE (DEGRADATION) OF OPERATIONAL CHARACTERISTICS UNDER RADIATION EXPOSURE." In Actual problems of physical and functional electronics. Ulyanovsk State Technical University, 2024. http://dx.doi.org/10.61527/appfe-2024.237-239.

Full text

Abstract:

This paper presents the results of an evaluation of the degradation processes of electrical characteristics of GaAs-based field-effect transistor device structures under the influence of a proton flux using computer simulation. The principles of forming an addition to compact (electrical) models of semiconductor devices are shown, allowing for the prediction of changes in their operational characteristics under radiation exposure.

APA, Harvard, Vancouver, ISO, and other styles

4

Fan, Angie, Calin Tarau, Richard Bonner, Tomas Palacios, and Massoud Kaviany. "2-D Simulation of Hot Electron-Phonon Interactions in a Submicron Gallium Nitride Device Using Hydrodynamic Transport Approach." In ASME 2012 Heat Transfer Summer Conference collocated with the ASME 2012 Fluids Engineering Division Summer Meeting and the ASME 2012 10th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/ht2012-58322.

Full text

Abstract:

In this study, a thermal and electrical coupled device solver is developed to simulate the energy transfer mechanism within a GaN FET with a gate length of 0.2 μm. The simulation simultaneously solves a set of hydrodynamic equations (derived from the Boltzmann Transport Equation) and the Poisson equation for electron, optical phonon and acoustic phonon energies, electron number density, electric field and electric potential. This approach has been previously established for gallium arsenide (GaAs) devices [36,37], but has not been extended to GaN due to the lack of readily available property v

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!