Relevant bibliographies by topics / Gallium arsenide. Gallium compounds. Indium compounds

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  2. Dissertations / Theses
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Academic literature on the topic 'Gallium arsenide. Gallium compounds. Indium compounds'

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Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Gallium arsenide. Gallium compounds. Indium compounds"

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Minagawa, Shigekazu, Hitoshi Nakamura, and Hisumi Sano. "OMVPE growth of gallium indium phosphide on the {100} gallium arsenide using adduct compounds." Journal of Crystal Growth 71, no. 2 (March 1985): 377–84. http://dx.doi.org/10.1016/0022-0248(85)90094-6.

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Nguyen, Chi H., Chao Zeng, Scott Boitano, Jim A. Field, and Reyes Sierra-Alvarez. "Cytotoxicity Assessment of Gallium- and Indium-Based Nanoparticles Toward Human Bronchial Epithelial Cells Using an Impedance-Based Real-Time Cell Analyzer." International Journal of Toxicology 39, no. 3 (March 31, 2020): 218–31. http://dx.doi.org/10.1177/1091581820914255.

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The semiconductor manufacturing sector plans to introduce III/V film structures (eg, gallium arsenide (GaAs), indium arsenide (InAs) onto silicon wafers due to their high electron mobility and low power consumption. Aqueous solutions generated during chemical and mechanical planarization of silicon wafers can contain a mixture of metal oxide nanoparticles (NPs) and soluble indium, gallium, and arsenic. In this work, the cytotoxicity induced by Ga- and In-based NPs (GaAs, InAs, Ga2O3, In2O3) and soluble III-V salts on human bronchial epithelial cells (16HBE14o-) was evaluated using a cell impedance real-time cell analysis (RTCA) system. The RTCA system provided inhibition data at different concentrations for multiple time points, for example, GaAs (25 mg/L) caused 60% inhibition after 8 hours of exposure and 100% growth inhibition after 24 hours. Direct testing of As(III) and As(V) demonstrated significant cytotoxicity with 50% growth inhibition concentrations after 16-hour exposure (IC50) of 2.4 and 4.5 mg/L, respectively. Cell signaling with rapid rise and decrease in signal was unique to arsenic cytotoxicity, a precursor of strong cytotoxicity over the longer term. In contrast with arsenic, soluble gallium(III) and indium(III) were less toxic. Whereas the oxide NPs caused low cytotoxicity, the arsenide compounds were highly inhibitory (IC50 of GaAs and InAs = 6.2 and 68 mg/L, respectively). Dissolution experiments over 7 days revealed that arsenic was fully leached from GaAs NPs, whereas only 10% of the arsenic was leached out of InAs NPs. These results indicate that the cytotoxicity of GaAs and InAs NPs is largely due to the dissolution of toxic arsenic species.
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Goswami, Yogesh, Pranav Asthana, Shibir Basak, and Bahniman Ghosh. "Junctionless Tunnel Field Effect Transistor with Nonuniform Doping." International Journal of Nanoscience 14, no. 03 (May 19, 2015): 1450025. http://dx.doi.org/10.1142/s0219581x14500252.

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In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.
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Kovalenko, Maksym V., Loredana Protesescu, and Maryna I. Bodnarchuk. "Properties and potential optoelectronic applications of lead halide perovskite nanocrystals." Science 358, no. 6364 (November 9, 2017): 745–50. http://dx.doi.org/10.1126/science.aam7093.

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Semiconducting lead halide perovskites (LHPs) have not only become prominent thin-film absorber materials in photovoltaics but have also proven to be disruptive in the field of colloidal semiconductor nanocrystals (NCs). The most important feature of LHP NCs is their so-called defect-tolerance—the apparently benign nature of structural defects, highly abundant in these compounds, with respect to optical and electronic properties. Here, we review the important differences that exist in the chemistry and physics of LHP NCs as compared with more conventional, tetrahedrally bonded, elemental, and binary semiconductor NCs (such as silicon, germanium, cadmium selenide, gallium arsenide, and indium phosphide). We survey the prospects of LHP NCs for optoelectronic applications such as in television displays, light-emitting devices, and solar cells, emphasizing the practical hurdles that remain to be overcome.
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Becker, R. A. "Optical-Guided-Wave Modulators." MRS Bulletin 13, no. 8 (August 1988): 21–23. http://dx.doi.org/10.1557/s0883769400064630.

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Planar optical-guided-wave devices have been in existence for over 20 years. Two interesting, informative articles can be found in References 1 and 2. Much of the early work in guided-wave optics was on passive devices, but this was also when much of the theoretical understanding of optical-guided-wave (OGW) devices was developed. This theoretical understanding applies to active devices as well. It's interesting to note that the commercialization of passive, glass-based guided-wave devices has just occurred with product introductions by Corning & Nippon Sheet Glass. Active OGW devices (i.e., ones where the light properties can be altered with an applied voltage) have been reported since about 1975. In 1985, Crystal Technology, Inc. announced the first commercially available product—a high-speed, efficient, intensity modulator. Throughout the ten years in between, a huge amount of technical literature has been generated. Most of the work has centered on the Ti:LiNbO3 waveguide technology although several other material systems have been demonstrated as well.Materials upon which optical-guided-wave modulators have been fabricated include: dielectrics such as lithium niobate (LiNbO3), lithium tantalate (LiTaO3), and potassium titanyl phosphate (KTP); the III-V semiconductor compounds, gallium arsenide (GaAs) and indium phosphide (InP); and a variety of organic polymers. Of these materials, waveguides on LiNbO3 are clearly the most developed and are offered for sale commercially. For this reason I will concentrate on this material system while making comparisons to the other material systems when appropriate.
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Hvam, J. M. "Gallium arsenide and related compounds 1984." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 14, no. 2 (February 1986): 259. http://dx.doi.org/10.1016/0168-583x(86)90053-4.

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Nørregaard, J. "Gallium arsenide and related compounds 1986." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 29, no. 3 (December 1987): 594. http://dx.doi.org/10.1016/0168-583x(87)90076-0.

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Carmalt, Claire J. "Amido compounds of gallium and indium." Coordination Chemistry Reviews 223, no. 1 (December 2001): 217–64. http://dx.doi.org/10.1016/s0010-8545(01)00385-x.

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Lustig, Christian, and Norbert W. Mitzel. "Methylthiomethyl Compounds of Aluminum, Gallium, and Indium." Organometallics 21, no. 16 (August 2002): 3471–76. http://dx.doi.org/10.1021/om0107338.

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Uhl, Werner. "The reactivity of organoelement compounds with aluminium—aluminium, gallium—gallium and indium—indium bonds." Coordination Chemistry Reviews 163 (July 1997): 1–32. http://dx.doi.org/10.1016/s0010-8545(97)00007-6.

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Dissertations / Theses on the topic "Gallium arsenide. Gallium compounds. Indium compounds"

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Shah, Syed Hassan. "Study of nonlinear optical properties of indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide self-assembled quantum dots." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 97 p, 2008. http://proquest.umi.com/pqdweb?did=1460350251&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Kerr, William. "Structural and optical studies of indium gallium arsenide/gallium arsenide quantum dot molecules for terahertz applications." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 80 p, 2006. http://proquest.umi.com/pqdweb?did=1203586781&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Swaminathan, Krishna. "Room-temperature aluminum gallium arsenic antimonide/indium gallium arsenic antimonide heterojunction phototransistors for the 2 micron region." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 83 p, 2009. http://proquest.umi.com/pqdweb?did=1654487611&sid=7&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Liu, Fang, and 刘方. "Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2015. http://hdl.handle.net/10722/209502.

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A pulse-laser based time-resolved photocurrent (TRPC) and photoluminescence (TRPL) system with a programmable Boxcar integrator/averager system incorporated was implemented to investigate the optical properties and charge carrier dynamics in a GaInP/GaAs single-junction photovoltaic device for the purposes of understanding fundamental optoelectronic processes in the solar cell. The implementation of whole system was realized by integrating the instrument of a Boxcar averager system with a pulse laser source + spectroscopic facilities. The delay time control and data acquisition were organized by the software code. The effects of the hardware configurations and the software parameters on the performance of the system were particularly addressed for the optimization of measurement conditions and precisions. Two main functions of TRPC and TRPL with a wide time range were demonstrated for the system. The system was employed to measure temperature- and bias voltages-dependent TRPC and TRPL spectra of a GaInP/GaAs single-junction photovoltaic device. The spectral data show a lot of information about the transient dynamic behaviors of photogenerated charge carriers in the device, including both the rise and decay processes. Interestingly, the measured time-resolved photocurrent curves are characterized by a fast rising edge followed by a relatively slow decay process as the temperature increases. Relevant theoretical calculations and analysis to the experimental curves were also carried out to understand diffusion and transport processes of charge carriers inside the device. The results show that the variation in temperature and reverse biases results in the structural change in the space charge region of the P-N junction and therefore affects the rise and decay time constants of the time-resolved photocurrent. The TRPL spectral data give information of mid-way radiative recombination of charge carriers in the device.
published_or_final_version
Physics
Master
Master of Philosophy
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Ekins-Daukes, Nicholas John. "An investigation into the efficiency enhancement of strained and strain-balanced quantum well solar cells." Thesis, Imperial College London, 2000. http://hdl.handle.net/10044/1/8093.

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Botha, Lindsay. "Towards the development of InAs/GaInSb strained-layer superlattices for infrared detection." Thesis, Nelson Mandela Metropolitan University, 2008. http://hdl.handle.net/10948/713.

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This study focuses on the development of InAs/GaInSb strained-layer superlattice structures by metal organic chemical vapour deposition (MOCVD), and deals with two aspects of the development of InAs/GaInSb SLS’s by MOCVD viz. the deposition of nano-scale (~100 Å) GaInSb layers, and the electrical characterization of unstrained InAs. The first part of this work aims to study the MOCVD growth of GaInSb layers in terms of deposition rate and indium incorporation on the nano-scale. This task is approached by first optimizing the growth of relatively thick (~2 μm) epitaxial films, and then assuming similar growth parameters during nano-scale deposition. The GaInSb layers were grown as part of GaInSb/GaSb quantum well (QW) structures. By using this approach, the GaInSb QW’s (~100 Å) could be characterized with the use of photoluminescence spectroscopy, which, when used in conjunction with transmission electron microscopy and/or X-ray diffractomery, proves useful in the analysis of such small scale deposition. It is shown that the growth rate of GaInSb on the nano-scale approaches the nominal growth rates determined from thick (~2 μm) GaInSb calibration layers. The In incorporation efficiency in nano-layers, however, was markedly lower than what was predicted by the GaInSb calibration layers. This reduction in indium incorporation could be the result of the effects of strain on In incorporation. The choice of substrate orientation for QW deposition was also studied. QW structures were grown simultaneously on both (100) and 2°off (100) GaSb(Te) substrates, and it is shown that growth on non-vicinal substrates is more conducive to the deposition of high quality QW structures. The second part of this study focuses on the electrical characterization of unstrained InAs. It is long known that conventional Hall measurements cannot be used to accurately characterize InAs epitaxial layers, as a result of parallel conduction resulting from surface and/or interface effects. This study looks at extracting the surface and bulk electrical properties of n-type InAs thin films directly from variable magnetic field Hall measurements. For p-type InAs, the situation is complicated by the relatively large electron to hole mobility ratio of InAs which tends to conceal the p-type nature of InAs thin films from Hall measurements. Here, this effect is illustrated by way of theoretical simulation of Hall data.
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Dufåker, Daniel, L. O. Mereni, Fredrik K. Karlsson, V. Dimastrodonato, G. Juska, Per-Olof Holtz, and E. Pelucchi. "Exciton-phonon coupling in single quantum dots with different barriers." Linköpings universitet, Halvledarmaterial, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-67198.

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The coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the quantum dots with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs.
Original Publication:Daniel Dufåker, L. O. Mereni, Fredrik K. Karlsson, V. Dimastrodonato, G. Juska, Per-Olof Holtz and E. Pelucchi, Exciton-phonon coupling in single quantum dots with different barriers, 2011, Applied Physics Letters, (98), 25, 251911.http://dx.doi.org/10.1063/1.3600781Copyright: American Institute of Physicshttp://www.aip.org/
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Milton, Brian E. "Lateral surface superlattices in strained InGaAs layers." Thesis, University of Glasgow, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340295.

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Tsai, Cheng-Hung. "Photoluminescence of gallium phosphide and indium gallium phosphide doped with rare-earths." Ohio : Ohio University, 2000. http://www.ohiolink.edu/etd/view.cgi?ohiou1173207968.

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Takami, Kazuaki. "Studies on novel synthetic organic reactions with gallium and indium compounds." 京都大学 (Kyoto University), 2005. http://hdl.handle.net/2433/144886.

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Kyoto University (京都大学)
0048
新制・課程博士
博士(工学)
甲第11531号
工博第2477号
新制||工||1335(附属図書館)
23174
UT51-2005-D281
京都大学大学院工学研究科材料化学専攻
(主査)教授 大嶌 幸一郎, 教授 檜山 爲次郎, 教授 吉田 潤一
学位規則第4条第1項該当
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Books on the topic "Gallium arsenide. Gallium compounds. Indium compounds"

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Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley, 1992.

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McKillop, A., J. D. Smith, and I. J. Worrall, eds. Organometallic Compounds of Aluminum, Gallium, Indium and Thallium. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-7172-2.

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International Symposium on Gallium Arsenide and Related Compounds (18th 1991 Seattle, Wash.). Gallium arsenide and related compounds 1991: Proceedings of the eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9-12 September 1991. Bristol [England]: Institute of Physics, 1992.

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Germany) Symposium on Non-Stoichiometric III-V Compounds (1st 1998 Erlangen. Symposium on Non-Stoichiometric III-V Compounds. Erlangen: Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg, 1998.

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International Symposium on Gallium Arsenide and Related Compounds (19th 1992 Karuizawa-machi, Japan). Gallium arsenide and related compounds 1992: Proceedings of the Nineteenth International Symposium on Gallium Arsenide and Related Compounds, Karuizawa, Japan, 28 September-2 October, 1992. Bristol, England: Institute of Physics, 1993.

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Germany) Symposium on Non-Stoichiometric III-V Compounds (3rd 2001 Erlangen. 3rd Symposium on Non-Stoichiometric III-V Compounds. Erlangen: Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität, 2001.

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Symposium, on Non-Stoichiometric III-V. Compounds (2nd 1999 Erlangen Germany). 2nd Symposium on Non-Stoichiometric III-V Compounds. Erlangen-Nürnberg: Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität, 1999.

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International Symposium on Gallium Arsenide and Related Compounds (12th 1985 Karuizawa-machi, Japan). Gallium arsenide and related compounds 1985: Proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23-26 September, 1985. Bristol: Published on behalf of the Institute of Physics by Hilger, 1986.

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International Symposium on Gallium Arsenide and Related Compounds (14th 1987 Heraklion, Greece). Gallium arsenide and related compounds 1987: Proceedings of the Fourteenth International Symposium on Gallium Arsenide and Related Compounds held in Heraklion, Crete, 28 September-1 October 1987. [s.l.]: Institute of Physics, 1988.

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Vegas), International Symposium on Gallium Arsenide and Related Compounds (13th 1986 Las. Gallium arsenide and related compounds 1986: Proceedings of the Thirteenth International Symposium on Gallium Arsenide and Related Compounds held in Las Vegas, Nevada, 28 September-1 October 1986. Bristol: Institute of Physics, 1987.

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Book chapters on the topic "Gallium arsenide. Gallium compounds. Indium compounds"

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Worrall, I. J., and J. D. Smith. "Ga Gallium." In Organometallic Compounds of Aluminum, Gallium, Indium and Thallium, 113–35. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-7172-2_2.

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Grant, I. R. "III-V compounds." In Chemistry of Aluminium, Gallium, Indium and Thallium, 292–321. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2170-5_5.

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Worrall, I. J., and J. D. Smith. "In Indium." In Organometallic Compounds of Aluminum, Gallium, Indium and Thallium, 137–50. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-7172-2_3.

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Starowieyski, K. B. "Organometallic compounds: synthesis and properties." In Chemistry of Aluminium, Gallium, Indium and Thallium, 322–71. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2170-5_6.

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Miller, J. A. "Organic transformations mediated by Group 13 metal compounds." In Chemistry of Aluminium, Gallium, Indium and Thallium, 372–429. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2170-5_7.

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Smith, J. D. "Al Aluminum." In Organometallic Compounds of Aluminum, Gallium, Indium and Thallium, 1–112. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-7172-2_1.

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McKillop, A., and J. D. Smith. "Tl Thallium." In Organometallic Compounds of Aluminum, Gallium, Indium and Thallium, 151–224. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-7172-2_4.

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Cooper, Benjamin F. T., and Charles L. B. Macdonald. "Mixed or Intermediate Valence Group 13 Metal Compounds." In The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities, 342–401. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9780470976548.ch6.

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Aldridge, Simon. "The Chemistry of the Group 13 Metals in the +3 Oxidation State: Simple Inorganic Compounds." In The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities, 75–147. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9780470976548.ch2.

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A. Tabbakh, Thamer, Raghad M. Aljohany, Hatem Alhazmi, and Rawan M. Alsulami. "Elastic, Optical, Transport, and Structural Properties of GaAs." In Indium [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94566.

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One of the major objectives of physics is to understand the physical properties of compound metals. Based on this very objective, in this chapter, we intend to review the physical as well as chemical properties of Gallium Arsenide material.
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Conference papers on the topic "Gallium arsenide. Gallium compounds. Indium compounds"

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Chao, Paul C. P., Jian-Ruei Chen, Che-Hung Tsai, and Wei-Dar Chen. "Design and Realization of High Resolution (640×480) SWIR Image Acquisition System." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2917.

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Imaging technology has been in revolutionary progresses in decades with well-developed semiconductor and memory industries. Silicon sensors are used in most of camera and DV, since silicon is the best material for visible light imaging (wavelength from 400nm∼700nm). Short wave infrared (SWIR) requires indium gallium arsenide (InGaAs), composed of chemical compounds including indium arsenide (InAs) and gallium arsenide (GaAs), to cover SWIR spectrum. Wavelength of typical SWIR is defined between 0.7um and 2.5um; SWIR cameras focus on wavelength between 0.9um∼1.7um (In0.53Ga0.47As). Unlike Mid-Wave IR and Long-Wave IR, SWIR is reflected and absorbed by objects, which advantages SWIR imaging higher resolution due to better contrast. SWIR also has excellent imaging quality in low illumination environment and moon light or star light are good emitters outdoor at night. Another primary characteristic of SWIR is high penetration, providing effective imaging under hazy conditions. An Example for night vision between SWIR.
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Pelfer, P. G., J. Ludwig, K. Runge, and H. S. Rupprecht. "Gallium Arsenide and Related Compounds." In 3rd International Workshop. WORLD SCIENTIFIC, 1996. http://dx.doi.org/10.1142/9789814532297.

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Reports on the topic "Gallium arsenide. Gallium compounds. Indium compounds"

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Vernon, S. Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Office of Scientific and Technical Information (OSTI), February 1993. http://dx.doi.org/10.2172/6686930.

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Moskowitz, P. D., N. Bernholc, M. P. DePhillips, and J. Viren. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride. Office of Scientific and Technical Information (OSTI), July 1995. http://dx.doi.org/10.2172/95217.

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Vernon, S. Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Annual subcontract report, 15 April 1988--14 June 1990. Office of Scientific and Technical Information (OSTI), February 1993. http://dx.doi.org/10.2172/10137805.

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Vernon, S. Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Final subcontract report, 1 April 1988--31 March 1990. Office of Scientific and Technical Information (OSTI), July 1993. http://dx.doi.org/10.2172/10178454.

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