Relevant bibliographies by topics / Gallium III ion

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Gallium III ion'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Gallium III ion"

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Vallini, F., L. A. M. Barea, E. F. Dos Reis, A. A. Von Zuben, and N. C. Frateschi. "Induced Optical Losses in Optoelectronic Devices due Focused Ion Beam Damages." Journal of Integrated Circuits and Systems 7, no. 2 (December 27, 2012): 87–91. http://dx.doi.org/10.29292/jics.v7i2.359.

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A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analyzes shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisks resonators are fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due optical scattering losses induced by implanted gallium atoms.
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Rubanov, S., and P. R. Munroe. "Damage in III–V Compounds during Focused Ion Beam Milling." Microscopy and Microanalysis 11, no. 5 (March 4, 2005): 446–55. http://dx.doi.org/10.1017/s1431927605050294.

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The damage layers generated in III–V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.
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Eddy, Charles R. "Etch Processing of III-V Nitrides." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 902–13. http://dx.doi.org/10.1557/s1092578300003586.

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As III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AlN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.
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Safavi, Afsaneh, and Marzieh Sadeghi. "A PVC-membrane bulk optode for gallium(III) ion determination." Talanta 71, no. 1 (January 15, 2007): 339–43. http://dx.doi.org/10.1016/j.talanta.2006.04.029.

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Stojnova, Kirila, Kiril Gavazov, Galya Toncheva, Vanya Lekova, and Atanas Dimitrov. "Extraction-spectrophotometric investigations on two ternary ion-association complexes of gallium(III)." Open Chemistry 10, no. 4 (August 1, 2012): 1262–70. http://dx.doi.org/10.2478/s11532-012-0045-y.

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AbstractComplex formation and liquid-liquid extraction were studied in systems containing Ga(III), azoderivative of resorcinol {4-(2-pyridylazo)resorcinol (PAR) or 4-(2-thiazolylazo)resorcinol (TAR)}, 2,3,5-triphenyltetrazolium chloride (TTC), water and chloroform. The optimum conditions w.r.t. pH, extraction time, concentration of ADR and concentration of TTC for the extraction of Ga(III) as an ion-associate complex were found.. The composition of the extracted complexes, (TT+)[Ga(PAR)2] (I), (TT+)[Ga(TAR)2] (II) or (TT+)2[Ga(OH)(TAR)2] (III), and the constants of association (β) between 2,3,5-triphenyltetrazolium cation (TT+) with corresponding anionic chelates were established by several methods. The constants of distribution (KD) and extraction (Kex) of the principal species I and III were determined as well. The apparent molar absorptivities of the chloroform extract at the optimum extraction-spectrophotometric conditions were ɛ′510=9.5×104 L mol−1 cm−1 (I) and ɛ′530=4.6×104 L mol−1 cm−1 (III). The validity of Beer’s law was checked and analytical characteristics that were calculated are reported herein.
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Obi, Hideki, Tadashi Segawa, and Takao Yotsuyanagi. "Ion-Associate Solvent Extraction of Gallium(III) from Aqueous Sodium Hydroxide Solution." Chemistry Letters 18, no. 4 (April 1989): 547–50. http://dx.doi.org/10.1246/cl.1989.547.

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Yamashoji, Yuko, Takayuki Matsushita, Minoru Tanaka, Toshiyuki Shono, and Masanori Wada. "Ion-pair extraction of the gallium(III) ion from hydrochloric acid with various methoxy- substituted triarylphosphines." Polyhedron 8, no. 8 (January 1989): 1053–59. http://dx.doi.org/10.1016/s0277-5387(00)81119-5.

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Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (February 1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.

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The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and plasma etching. Ion implantation is a technology whereby impurity atoms are introduced into the semiconductor with precise control of concentration and profile. It is widely used in mature semiconductor materials systems such as silicon or gallium arsenide for selective area doping or isolation. Plasma etching is employed to define device features in the semiconductor material with controlled profiles and etch depths. Plasma etching is particularly necessary in the III-nitride materials systems due to the lack of suitable wet-etch chemistries, as will be discussed later.Figure 1 shows a laser-diode structure (after Nakamura) where plasma etching is required to form the laser facets that ideally should be vertical with smooth surfaces. The first III-nitride-based laser diode was fabricated using reactive ion etching (RIE) to form the laser facets but suffered from rough mirror facet surfaces that contributed to scattering loss and a high lasing threshold. This is a prime example of how improved material quality alone will not yield optimum device performance.
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Todorov, Lozan, Luciano Saso, Khedidja Benarous, Maria Traykova, Abderahmane Linani, and Irena Kostova. "Synthesis, Structure and Impact of 5-Aminoorotic Acid and Its Complexes with Lanthanum(III) and Gallium(III) on the Activity of Xanthine Oxidase." Molecules 26, no. 15 (July 26, 2021): 4503. http://dx.doi.org/10.3390/molecules26154503.

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The superoxide radical ion is involved in numerous physiological processes, associated with both health and pathology. Its participation in cancer onset and progression is well documented. Lanthanum(III) and gallium(III) are cations that are known to possess anticancer properties. Their coordination complexes are being investigated by the scientific community in the search for novel oncological disease remedies. Their complexes with 5-aminoorotic acid suppress superoxide, derived enzymatically from xanthine/xanthine oxidase (X/XO). It seems that they, to differing extents, impact the enzyme, or the substrate, or both. The present study closely examines their chemical structure by way of modern methods—IR, Raman, and 1H NMR spectroscopy. Their superoxide-scavenging behavior in the presence of a non-enzymatic source (potassium superoxide) is compared to that in the presence of an enzymatic source (X/XO). Enzymatic activity of XO, defined in terms of the production of uric acid, seems to be impacted by both complexes and the pure ligand in a concentration-dependent manner. In order to better relate the compounds’ chemical characteristics to XO inhibition, they were docked in silico to XO. A molecular docking assay provided further proof that 5-aminoorotic acid and its complexes with lanthanum(III) and gallium(III) very probably suppress superoxide production via XO inhibition.
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Yamashoji, Yuko, Takayuki Matsushita, Masanori Wada, and Toshiyuki Shono. "Ion-pair Extraction of Gallium(III) from Hydrochloric Acid with Various Methoxy-substituted Triarylphosphines." Chemistry Letters 17, no. 1 (January 5, 1988): 43–46. http://dx.doi.org/10.1246/cl.1988.43.

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Dissertations / Theses on the topic "Gallium III ion"

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Kucheyev, Sergei Olegovich. "Ion-beam processes in group-III nitrides." View thesis entry in Australian Digital Theses Program, 2002. http://thesis.anu.edu.au/public/adt-ANU20030211.170915/index.html.

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Kench, P. J. "Microstructures of group III-nitrides after implantation with gallium." Thesis, University of Surrey, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343459.

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Faux-Mallet, Marie-Sabine. "Extraction du gallium(iii) en milieu acide : comparaison des methodes d'extraction liquide-liquide et d'echange d'ions sur resines." Paris 6, 1988. http://www.theses.fr/1988PA066234.

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Comparaison des avantages et des inconvenients de l'extraction a l'aide de resines et de l'extraction liquide-liquide en vue de preciser leur domaine respectif d'utilisation en hydrometallurgie. Etude de la separation du gallium contenu dans les solutions d'attaque des minerais de zinc. Utilisation de la resine duolite es467 et pour l'extraction liquide-liquide de l'hydroxy-8 quinoleine et d'une alpha-hydroxy-oxime
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Hallali, Paul-Eric. "Diffusion de zinc dans les materiaux algainas : application au transistor bipolaire a heterojonction." Paris 7, 1988. http://www.theses.fr/1988PA077071.

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Ces materiaux quaternaires algainas et les ternaires limites gainas et alinas sont elabores par epitaxie par jets moleculaires sur substrat de phosphure d'indium. Les diffusions sont realisees en utilisant la technique de la boite semi-fermee et elles sont caracterisees par profilometre electrochimique (polaron) et par sonde ionique (sims). On etudie experimentalement le mecanisme de diffusion du zinc dans gainas et on determine un mecanisme intersticiel-substitutionnel. Ensuite on expose l'utilisation de la diffusion dans le procede de fabrication des transistors bipolaires a heterojonction
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Allain, Laurent. "Etude des effets de la temperature sur la diffraction des rayons x par des composes semiconducteurs iii-v." Paris 6, 1988. http://www.theses.fr/1988PA066016.

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Determination par diffraction rx haute resolution des parametres cristallins de couches epitaxiques de gaalas ou gainas deposees sur les supports si, ge, ga, as, gap, inp et inas, en fonction de la temperature. Les coefficients de dilatation sont determines sur des materiaux relaxes et une extrapolation a d'autres systemes est possible. L'accord parametrique pour gaalas est realise a une temperature superieure a la temperature de depot et pour gainas, cet accord est realise a une temperature de depot dependant du taux de substitution ga/in
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Rivera, Santillan Rosa Elva. "Flottation ionique des cations métalliques par les collecteurs à longue chaîne : Application aux ions BA**(2+) et GA**(3+)." Nancy 1, 1987. http://www.theses.fr/1987NAN10241.

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Récupération du baryum à partir du milieu aqueux par flottation ionique utilisant des alkylbenzène-sulfonates de sodium. Récupération du gallium, par flottation ionique en utilisant des alkylsulfates de sodium en milieu acide, et des collecteurs à fonction oxine en milieu basique
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BENSOUSSAN, SERGE. "Deformations dans les heterostructures epitaxiees sur des substrats semiconducteurs iii-v : etude experimentale par diffraction de rayons x et simulation sur ordinateur." Paris 6, 1986. http://www.theses.fr/1986PA066374.

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La distribution de deformation a l'interface entre une couche epitaxique d'un compose tertiaire (arseniure de al et ga par exemple) et un support semiconducteur iii-v a pu etre mise en evidence et mesuree a l'aide, essentiellement, de la diffraction d'une onde rx plane ou pseudo-plane. Etude de la sensibilite de la methode a un etalement de l'interface en fonction de l'epaisseur de la couche et de son desaccord avec le support. Simulation sur ordinateur du profil de reflexion des jonctions abruptes et etalees. Application a divers echantillons et au cas des structures multicouches et des superreseaux
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Diakonov, Igor. "Etude expérimentale de la complexation de l'aluminium avec l'ion sodium et de la spéciation du gallium et du fer (III) dans les solutions naturelles." Toulouse 3, 1995. http://www.theses.fr/1995TOU30211.

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Ce travail s'integre aux etudes qui sont menees au laboratoire de geochimie (ura 067) sur la speciation chimique des metaux dans les fluides de la croute terrestre. Il a pour but d'acquerir des donnees thermodynamiques sur les complexes hydroxyles du gallium et du fer (iii) et sur la complexation entre le sodium et l'aluminium, afin de mieux comprendre le transport et le partage de ces elements fortement hydrolyses dans les fluides superficiels et hydrothermaux. La constante de complexation du sodium avec l'ion aluminate (al(oh)#4#-) a ete determinee a partir de mesures de solubilite de la boehmite entre 125-350c en milieu basique dans des solutions contenant du sodium (0,1-1 mol/l) et a partir de mesures potentiometriques avec une electrode specifique de sodium entre 75 et 200c. (les mesures potentiometriques ont ete effectuees par gleb pokrovski). L'analyse de ces donnees dans le cadre du modele hkf (helgeson, kirkham, flowers) a permis de determiner les parametres de l'equation d'etat de naal(oh)#4 et ainsi de calculer les proprietes thermodynamiques de cette espece jusqu'a 800c et 5 kb. Ces calculs montrent que la formation de la paire d'ions naal(oh)#4 augmente considerablement la solubilite des mineraux alumineux et ainsi la mobilite de l'aluminium dans les fluides hydrothermaux. Les proprietes thermodynamiques de ga(oh)#4#-, l'espece aqueuse qui domine la speciation du gallium dans les solutions superficielles et hydrothermales, ont ete determinees par mesure de la solubilite de gaooh en fonction du ph (5-12,5 a 25c) et de la temperature (25-250c). On montre que le comportement chimique de cette espece est tres proche de celui de l'ion aluminate mais que la forte tendence du gallium a s'hydrolyser permet une separation de ces deux elements dans les processus superficiels. Les proprietes thermodynamiques des especes fe(oh)#4#- et fe(oh)#3 (l'espece dominante de fe(iii) dans les solutions aqueuses superficielles) ont ete determinees a partir de mesures de solubilite de l'hematite en fonction du ph (11-13 a 25c) et de la temperature (110-300c) sous exces d'oxygene (3 po#2 12 bars a 25c). En outre, les donnees thermodynamiques disponibles sur les autres especes hydrolysees du fer (iii) et du fer (ii) et les oxydes et hydroxydes du fer(iii) ont ete reexaminees. L'ensemble coherent de donnees thermodynamiques presente dans cette etude pour le systeme fe(iii)-o-h a permis de construire les courbes de solubilite des oxydes et hydroxydes du fer(iii) en fonction du ph, de leur surface specifique et du temps de vieillissement (pour l'hydroxyde amorphe). Les speciations aqueuses de l'aluminium, du gallium et du fer dans les fluides superficiels sont comparees et discutees
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Pryor, Donald Edward. "Synthesis and Bioactivity Studies of Nanoparticles Based on Simple Inorganic and Coordination Gallium Compounds as Cellular Delivering Vehicles of Ga(III) Ions for Potential Therapeutic Applications." Kent State University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=kent1543554532063877.

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Demonchaux, Thomas. "Étude de semiconducteurs III-V non-stoechiométriques pour l'échantillonnage de signaux hyperfréquences." Thesis, Lille 1, 2018. http://www.theses.fr/2018LIL1I049/document.

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L’arséniure de gallium épitaxié à basse température (GaAs-BT) présente des propriétés d’intérêt pour l’opto-électronique. Ses propriétés sont liées à la présence de défauts ponctuels à l’origine des temps de vie compatibles avec son utilisation en tant que couche active dans des photo-commutateurs. Pour mieux connaître l’origine physique du temps de vie afin de l’optimiser, ce travail de thèse a consisté à mener une étude du matériau en combinant des analyses macroscopiques avec une caractérisation microscopique. Il comporte cinq chapitres, le premier présente un état des connaissances sur le GaAs-BT, le second décrit les techniques utilisées lors de de cette étude. Le troisième chapitre s’intéresse à la composition chimique de la couche de GaAs-BT et à sa caractérisation structurale par diffractométrie des rayons X. Il révèle la croissance de composés quaternaires dilués en P et en In et suggère la présence d’antisites d’éléments V. La présence de phosphore pose la question de la nature chimique de ces antisites. Le chapitre suivant vise à identifier les défauts ponctuels incorporés dans le matériau grâce à une étude STM à basse température. La majorité des défauts se distingue des antisites observés dans la littérature par un état de charge négatif et un aspect changeant au passage de la pointe, une analyse des conditions d’imagerie en fonction de la température confrontée à des calculs ab-initio indique la formation préférentielle d’antisites d’arsenic par rapport à celle d’antisites de phosphore. Le dernier chapitre est consacré à la caractérisation du matériau après recuit. Il démontre que les antisites ne précipitent pas pour une température de croissance de 325°C
Low temperature grown gallium arsenide (LTG-GaAs) has shown interesting properties for optoelectronics. These properties are related to point defects within the material wich permits carrier lifetimes compatible with its use as an active layers in photoswitches. In order to improve the current knowledge on the physical origin of carrier lifetime to optimise it, this thesis work consisted in leading a thorough study of the material by combining macroscopic analysis with microscopic characterization. It consists of five chapters, the first one presents a state of the art on LTG-GaAs while the second describes the different techniques used during this study. The third chapter focuses on the chemical composition of the LTG-layer and on its structural characterization through X-ray diffraction. It reveals the growth of diluted quaternary compound containing P and In and suggests the presence of element V antisites. Thus, the presence of phosphorus require to determin the chemical nature of these antisites. The next chapter aims to identify the incorporated point defects within the material through low temperature STM study. The majority of defects differs from observed antisites in the litterature with a negative charge state and a changing appearance while scanning, analysis of imaging conditions versus the temperature confronted with ab-initio calculation shows the preferential formation of arsenic antisites compared to the formation of phosphorus antisites. The last chapter is dedicated to characterizing the material after annealing. It demonstrates that antisites do not cluster for a growth temperature of 325°C
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Books on the topic "Gallium III ion"

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Norpoth, Helmut. GI Partisanship. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190882747.003.0007.

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The generation of Americans who served in the armed forces during World War II helped give the Democratic Party its commanding lead in voter identifications for years to come. This insight comes from an analysis of polls conducted between 1937 and 1953, all but a few by the Gallup Organization. The effects of the Depression and the New Deal notwithstanding, World War II swung an even heavier proportion of young Americans to the Democratic Party and gave it a firm hold on that generation. This was true especially for those in uniform during that war. Their commander in chief, a Democrat, was immensely popular with the troops. In the election of 1944, FDR won their votes, wherever they could cast them, in a landslide. The return to civilian life did nothing to dull the wartime edge of the Democratic Party among World War II veterans. This is an unsung legacy of FDR’s popular appeal that endured long after his death.
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Book chapters on the topic "Gallium III ion"

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Jacquin, O., S. Faux-Mallet, G. Cote, and D. Bauer. "The Recovery of Gallium(III) from Acid Leach Liquors of Zinc Ores Using Selective Ion Exchange Resins." In Recent Developments in Ion Exchange, 213–20. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3449-8_21.

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"Gallium(III) Ion." In Encyclopedia of Metalloproteins, 822. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-1533-6_100531.

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Yamaguchi, M. "Organogallium(III) Complexes Containing Gallium—Gallium Bonds." In Compounds of Groups 13 and 2 (Al, Ga, In, Tl, Be...Ba), 1. Georg Thieme Verlag KG, 2004. http://dx.doi.org/10.1055/sos-sd-007-00250.

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Tuck, Brian. "Gallium Arsenide and Friends." In Atomic Diffusion in III–V Semiconductors, 1–8. CRC Press, 2021. http://dx.doi.org/10.1201/9781003210511-1.

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Yamaguchi, M. "From Organometallic Compounds and Gallium(III) Halides." In Compounds of Groups 13 and 2 (Al, Ga, In, Tl, Be...Ba), 1. Georg Thieme Verlag KG, 2004. http://dx.doi.org/10.1055/sos-sd-007-00278.

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Routray, Soumyaranjan, and Trupti Lenka. "III-Nitride Nanowires: Future Prospective for Photovoltaic Applications." In Nanowires - Recent Progress [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.95011.

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Photovoltaic (PV) technology could be a promising candidate for clean and green source of energy. The nanowire technology provides extra mileage over planar solar cells in every step from photon absorption to current generation. Indium Gallium Nitride (InxGa1-xN) is a recently revised material with such a bandgap to absorb nearly whole solar spectrum to increase the conversion efficiency copiously. One of the major technological challenge is in-built polarization charges. This chapter highlights the basic advantageous properties of InxGa 1−xN materials, its growth technology and state-of-the-art application towards PV devices. The most important challenges that remain in realizing a high-efficiency InxGa 1−xN PV device are also discussed. III-Nitride nanowires are also explored in detail to overcome the challenges. Finally, conclusions are drawn about the potential and future aspect of InxGa 1−xN material based nanowires towards terrestrial as well as space photovoltaic applications.
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Yamaguchi, M. "From Metalated Organic Acids and Gallium(III) Halides." In Compounds of Groups 13 and 2 (Al, Ga, In, Tl, Be...Ba), 1. Georg Thieme Verlag KG, 2004. http://dx.doi.org/10.1055/sos-sd-007-00275.

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Yamaguchi, M. "Redistribution Reaction between Triorganogallium Complexes and ­Gallium(III) Halides." In Compounds of Groups 13 and 2 (Al, Ga, In, Tl, Be...Ba), 1. Georg Thieme Verlag KG, 2004. http://dx.doi.org/10.1055/sos-sd-007-00261.

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Schweitzer, George K., and Lester L. Pesterfield. "The Boron Group." In The Aqueous Chemistry of the Elements. Oxford University Press, 2010. http://dx.doi.org/10.1093/oso/9780195393354.003.0009.

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The elements which constitute the Boron Group of the Periodic Table are boron B, aluminum Al, gallium Ga, indium In, and thallium Tl. All five of the elements have atoms characterized by an outer electron structure of ns2np1 with n representing the principal quantum number. There are marked similarities in the elements, except for B whose small size and high charge density make it a non-metal. B evidences an oxidation state of III but shows no aqueous cation chemistry. The other elements all show cation chemistries involving an oxidation state of III, but the I oxidation state becomes progressively more stable until at Tl it is the predominant state. All ions in the group are colorless. Ionic sizes in pm are B+3(27), Al+3(53), Ga+3(62), In+3(80), Tl+3(89), and Tl+(150), with the B+3 value being hypothetical since B bonds only covalently. In line with the increasing sizes, the basicity of the oxides and hydroxides increases: H3BO3 or B(OH)3 is weakly acidic, M(OH)3 for Al, Ga, and In are amphoteric, and Tl(OH)3 or Tl2O3 is basic. The E° values in volts for the M(III)/M couples are as follows: H3BO3/B (−0.89), Al+3/Al (−1.68), Ga+3/Ga (−0.55), and In+3/In (−0.35). The E° value for the Tl+/Tl couple is −0.33 v. a. E–pH diagram. The E–pH diagram for 10−1.0 M B is presented in Figure 7.1. In the figure legend are equations which describe the lines which separate species. Considerably above the H3BO3/B line, the HOH≡H+/H2 line appears, which indicates that elemental B is thermodynamically unstable in HOH, but in practice B has a strong tendency to be non-reactive, vigorous treatment usually being required to oxidize it.
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"TRES GALLIAE." In The Imperial Cult in the Latin West, Volume III: Provincial Cult. Part 2: The Provincial Priesthood, 17–71. BRILL, 2002. http://dx.doi.org/10.1163/9789004301696_004.

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Conference papers on the topic "Gallium III ion"

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Tang, Ying, Sharad Yedave, Oleg Byl, Joseph Despres, and Joseph Sweeney. "Source Materials and Methods for Gallium Ion Implantation." In 2018 22nd International Conference on Ion Implantation Technology (IIT). IEEE, 2018. http://dx.doi.org/10.1109/iit.2018.8807951.

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Vasquez, M., T. Kasuya, S. Maeno, N. Miyamoto, M. Wada, Jiro Matsuo, Masataka Kase, Takaaki Aoki, and Toshio Seki. "Plasma Sputter-type Ion Source with Wire Electrodes for Low-energy Gallium Ion Extraction." In ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3548453.

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Chin, Y. L., C. Y. Yang, T. H. Lee, S. W. Yeh, W. F. Chang, S. C. Huang, N. H. Yang, et al. "Impact of gallium implant for advanced CMOS halo/pocket optimization." In 2014 20th International Conference on Ion Implantation Technology (IIT). IEEE, 2014. http://dx.doi.org/10.1109/iit.2014.6939771.

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Ca´rcel, A. C., and M. A. Pe´rez Puig. "The Influence of Friction Stability on the Success of Lubricated Stamping Operations: Predictive Tools From Plane Friction Tests." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-64278.

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This work was aimed at analysing the influence of the tribological behaviour on the onset of systematic fractures of car body parts during stamping, and at developing an alternative friction evaluation system, able to detect in advance the risk of failure by galling or seizing when stamping zinc coated (electrogalvanized or hot dip galvanized) steel sheets. The friction test reproduces the severe boundary lubrication conditions found in real practice, and also the progressive deterioration of the initial surface topography that the sheet suffers as a result of the pass through the draw-beads before reaching the die entry. Under these conditions, it was found that the initial values of the coefficient of friction have only a limited effect on the real behaviour, and that successful stamping relies mainly on the stability of the friction values as the length of sheet under pressure between the tools increases. Some index parameters obtained from this test can be used to predict in advance with high reliability the risk of lubricant breakdown and galling during real stamping.
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Hu, Xianguo. "Emulsion for Single Phase Alpha-Brass in Hot Rolling Process: Case Study." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63133.

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According to the hydrophile-lipophile balance (HLB) theory and the evaluation results of friction, wear and lubrication using a four-ball tribometer, a novel oil-in-water emulsion was developed for the hot rolling process of hard brass (single phase alpha-brass, CuZn32 (ASTM C26200) and CuZn30 (ASTM C26000)) by controlling the composition of the emulsion, such as emulsifying, antiwear, extreme pressure, antirust and so on. In the actual hot rolling process, the roller material was the welded-stainless steel ASTM 420 (HRC34-44), in which the lubrication mechanism of brushing grease discontinuously was replaced by emulsion jet directly to the hot roller surface. The actual hot rolling results proved that it was easy to control the accuracy and size of the brass sheet with the emulsion jet. This new process increased the antiwear and anti-galling abilities of the rollers, and improved the surface quality of the brass sheet. For example, the formation of deep, dark streaks in the hot rolled copper sheet is prevented, galling and roughening of the roller surfaces during hot rolling is reduced and it also saved labor, and increased production efficiency and the service life of the hot roller greatly.
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Ezugwu, E. O., J. Bonney, W. F. Sales, and R. B. da Silva. "Observations of Tool Life and Wear Mechanisms in High Speed Machining of Ti-6Al-4V With PCD Tools Using High Pressure Coolant Supply." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63367.

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Usage of titanium alloys has increased since the past 50 years despite difficulties encountered during machining. In this study PCD tools were evaluated when machining Ti-6Al-4V alloy at high speed conditions under high pressure coolant supplies. Increase in coolant pressure tend to improve tool life and minimise adhesion of the work material on the cutting tool during machining. Adhesion can be accelerated by the susceptibility of titanium alloy to galling during machining.
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Muhammad, R., R. Ahamad, Z. Ibrahim, and Z. Othaman. "Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters." In FRONTIERS IN PHYSICS: 4th International Meeting. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4866956.

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Nixon, Harvey P. "Methods for Assessing the Bearing Surface Durability Performance of Lubricant Formulations." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-64090.

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Lubricant formulations and lubricant additives have been demonstrated to have a major impact on the surface durability of rolling element bearings. However, there are very few standard tests used to assess the performance aspects of lubricants as it relates to bearing surface performance. Lubricant formulations have been slanted heavily toward protecting gear concentrated contacts from galling and wear. In addition, much of the performance differentiation of lubricants has been dependent on highly accelerated standardized laboratory tests related to gears. Methods have been developed for properly evaluating a lubricant’s performance characteristics as it relates to bearings. These methods are explained and the corresponding test results are reviewed to show their effectiveness as a lubricant performance evaluation tool. The implications of these findings provide direction and suggestions for ways to minimize or avoid potential detrimental performance effects of lubricant formulations on rolling element bearings.
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Blau, Peter J., Jun Qu, and Laura Riester. "Effects of Laser Surface Texturing on the Microstructure and Frictional Characteristics of Zirconia Surfaces Under Liquid and Solid Lubrication." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63197.

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The production of dimple patterns in surfaces by laser surface texturing (LST) has received considerable interest. The current research characterized the effects of LST on the near-surface microstructures in transformation-toughened zirconia (TTZ) and investigated how dimpling can affect reciprocating frictional behavior under both liquid and solid lubrication. Microstructural characterization included scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning acoustic microscopy (SAcM), and nanoindentation testing. Fine-scale micro-cracks were observed in both the rims and bottoms of dimple craters. Most of the laser-affected zone is composed of very fine grains with diameters 125∼150 nm, but no grain structure was observed nearest the rim edges. The distribution of residual stresses around the dimples, induced by LST, was revealed by SAcM. Nanoindentation tests of TTZ indicated no significant differences in hardness or elastic modulus between the material near the dimples and in the bulk. Counterface materials in the flat-on-flat reciprocating sliding tests included silicon nitride and a galling-resistant stainless steel. Friction tests were conducted under both liquid (mineral oil) and solid (fine graphite powder) lubrication. Dimpling did not show measurable improvement on frictional behavior under the applied test conditions, although they were supposed to function as lubricant reservoirs and debris traps.
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Tiurin, Sergei Sergeevich. "Antique Series of Coinds Dedicated to Labours of Hercules (II-III A.D.)." In All-Russian Scientific Conference with International Participation. Publishing house Sreda, 2021. http://dx.doi.org/10.31483/r-98862.

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The article examines the practice of issuing "serial" coins at various mints during the Roman Empire on the example of the twelve labors of Heracles (in the Roman interpretation - Hercules). In this article, a "series" means a complex of coins, regardless of metal and denomination, issued within the reign of one Roman emperor, one mint and / or one geographical place, united by one hero or a single storyline. It was established that the series with the exploits of Heracles in the II-III centuries. AD were minted in all parts of the vast Roman state and beyond its borders: from the southernmost (Alexandria, Egypt) to the north (Panticapaeum, Bosporan kingdom), from the west (Tarsus, Cilicia) to the east (Colonia Agrippina, "Gallic Empire" by Mark Postumus). The serial issue of coins with Heracles was also recorded at the mint of the center of the state in Rome.
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