Relevant bibliographies by topics / Gallium nitride. Modulation-doped field-effect transistors. Piezoelectricity

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Academic literature on the topic 'Gallium nitride. Modulation-doped field-effect transistors. Piezoelectricity'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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Dissertations / Theses on the topic "Gallium nitride. Modulation-doped field-effect transistors. Piezoelectricity"

1

Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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Liu, Jie. "Channel engineering of III-nitride HEMTs for enhanced device performance /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ECED%202006%20LIUJ.

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Feng, Zhihong. "Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202006%20FENG.

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Yi, Congwen. "Reliability study of enhancement-mode AIGaN/GaN HEMT fabricated with fluorine plasma treatment technology /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20YI.

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Christensen, Adam Paul. "Multiscale modeling of thermal transport in gallium nitride microelectronics." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31681.

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Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Samuel Graham; Committee Member: Donald Dorsey; Committee Member: Douglas Yoder; Committee Member: Michael Leamy; Committee Member: Sankar Nair; Committee Member: Zhuomin Zhang. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Newham, Wesley Scott. "Development of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on diamond substrates." Thesis, Monterey California. Naval Postgraduate School, 2006. http://hdl.handle.net/10945/2820.

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Silicon based semiconductor devices are rapidly approaching the theoretical limit of operation and are becoming unsuitable for future military requirements. The scope of semiconductor devices has been expanded by wide bandgap devices such as gallium nitride (GaN) to include the possibility for high power and high frequency operation. A new generation of high speed â high frequency devices is required to meet current and future military needs. The Gallium Nitride High Electron Mobility Transistor (HEMT) is showing great promise as the enabling technology in the development of military radar systems, electronic surveillance systems, communications systems and high voltage power systems. Typically, sapphire or silicon carbide is utilized as the substrate material in most HEMT designs. This thesis explores the possibility of utilizing a diamond substrate to increase the power handling capability of the AlGaN/GaN HEMT. Diamond offers increased thermal property parameters that can be simulated in the commercially available Silvaco software package. A complete electrical and thermal analysis of the model was conducted and compared to actual device characteristics. The results of the software simulation and measurements on the test devices indicate diamond substrates will enable the HEMT to be operated at a higher power than traditional sapphire substrate HEMTS.
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Wang, Ruonan. "Enhancement/depletion-mode HEMT technology for III-nitride mixed-signal and RF applications /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20WANG.

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Beechem, Thomas E. III. "Metrology of gan electronics using micro-raman spectroscopy." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26544.

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Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Graham, Samuel; Committee Member: Bassiri-Gharb, Nazanin; Committee Member: Doolittle, William A.; Committee Member: Garimella, Srinivas; Committee Member: Green, Dan; Committee Member: Sitaraman, Suresh. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Kang, Sangbeom. "The epitaxial growth of GaN and A1GaN/GaN Heterostructure Field Effect Transistors (HFET) on Lithium Gallate (LiGaO₂) substrates." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/13903.

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Walker, Dennis Eugene. "The role of defects on Schottky and Ohmic contact characteristics for GaN and AlGaN/GaN high-electron mobility transistors." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1141766860.

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Books on the topic "Gallium nitride. Modulation-doped field-effect transistors. Piezoelectricity"

1

1977-, Zhang Jinfeng, and Zhang Jincheng 1976-, eds. Dan hua wu kuan jin dai ban dao ti cai liao yu dian zi qi jian. Ke xue chu ban she, 2013.

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2

Wolter, Mike Jean. Störstellen in Galliumnitrid-basierenden Transistoren. Forschungszentrum Jülich, Zentralbibliothek, 2004.

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