Dissertations / Theses on the topic 'Gallium selenides'

Verification du modele d'elliot pour le cas d'une transition directe avec interaction electron-trou. Le modele a ete modifie pour tenir compte de l'anisotropie et de l'interaction avec les vibrations du reseau. L'analyse, effectuee entre 2 et 500 k, a permis de suivre l'evolution des parametres excitoniques et de la structure de bande avec la temperature. La forme des raies excitoniques avec lorentzienne asymetrique a ete predite. A partir de la, la nature de l'exciton direct et de l'interaction exciton-phonon ont pu etre deduites

Thesis (Ph. D.)--University of Oregon, 2002.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 143-148). Also available for download via the World Wide Web; free to University of Oregon users.

Nous étudions la possibilité de réaliser des cellules à base de diséléniure de cuivre, indium et gallium (CIGSe) à absorbeur ultra-mince, en réduisant l’épaisseur de la couche de CIGSe de 2500 nm jusqu’à 100 nm, tout en conservant un haut rendement de conversion.Grâce à l’utilisation d’outils de simulation numérique, nous étudions l’influence de la réduction d’épaisseur de l’absorbeur sur les paramètres photovoltaïques de la cellule. Une importante dégradation du rendement est observée, principalement attribuée à une réduction de la fraction de lumière absorbée par le CIGSe ainsi qu’à une collecte des porteurs de charge réduite dans les dispositifs ultraminces. Des solutions permettant de surmonter ces problèmes sont proposées et leur influence potentielle est numériquement simulée ; nous démontrons qu’une ingénierie de face avant (couche tampon alternative, couche anti-réfléchissante…) et de face arrière (contact arrière réfléchissant, diffusion de la lumière) sur une cellule CIGSe à absorbeur ultramince permet de potentiellement améliorer le rendement de la cellule solaire au niveau de celui d’une cellule à absorbeur référence (2.5 μm).Grâce à l’utilisation de techniques de gravure chimique sur des échantillons standards de CIGSe épais, nous réalisons des cellules solaires avec différentes épaisseurs d’absorbeurs, et nous étudions l’influence de l’épaisseur du CIGSe sur les paramètres photovoltaïques des cellules. Le comportement similaire aux simulations numériques.Une ingénierie du contact avant sur des cellules CIGSe à différentes épaisseurs est réalisée pour spécifiquement améliorer l’absorption dans la couche de CIGSe. Nous étudions l’influence d’une couche tampon alternative de ZnS, de la texturation de la fenêtre avant de ZnO:Al, et d’une couche anti-reflet sur la cellule solaire. D’importantes améliorations sont observées quelque soit l’épaisseur de la couche de CIGSe, ce qui permet d’obtenir des rendements de conversions supérieurs à ceux obtenus dans la configuration standard des dispositifs.Une ingénierie du contact arrière à basse température est également réalisée avec l’utilisation d’un procédé novateur combinant la gravure chimique du CIGSe avec un « lift-off » mécanique de la couche de CIGSe afin de la séparer du substrat de Molybdène. De nouveaux matériaux fortement réflecteur de lumière et précédemment incompatible avec le procédé de croissance du CIGSe sont utilisés comme contact arrière pour des cellules CIGSe ultra-minces. Une étude comparative en fonction de l’épaisseur de CIGSe entre des cellules avec contact arrière réfléchissant en Or (Au) et cellules solaires avec contact arrière standard Mo est effectuée. Le contact Au permet d’augmenter significativement le rendement de conversion des cellules solaires à absorbeur sub-microniques comparé au contact standard Mo avec un rendement de conversion supérieur à 10% obtenu sur une cellule CIGSe de 400 nm (comparé à 7.9% avec Mo).Afin de réduire encore plus l’épaisseur de la couche de CIGSe, jusque 100-200 nm, les modèles numériques montrent qu’il est nécessaire d’utiliser un réflecteur lambertien sur la face arrière de la cellule afin de maximiser l’absorption de la lumière. Un dispositif preuve de concept expérimental est réalisé avec une épaisseur de CIGSe de 200 nm et un réflecteur arrière lambertien, et ce dispositif est caractérisé par spectroscopie de transmission/réflexion. La réponse spectrale est déterminée en combinant des valeurs issues de simulation numérique et la mesure expérimental de l’absorption du dispositif. Nous calculons un courant de court circuit de 26 mA.cm-2 pour ce dispositif avec réflecteur lambertien, bien supérieur à ce qui est calculé pour la même structure sans réflecteur (15 mA.cm-2), et comparable au courant mesuré sur une cellule de référence de 2500 nm (28 mA.cm-2). L’utilisation de réflecteur lambertien pour des cellules CIGSe ultraminces est donc particulièrement adaptée pour maintenir de hauts rendements
In this thesis, we investigate on the possibility to realize ultrathin absorber Copper Indium Gallium Di-Selenide (CIGSe) solar cells, by reducing the CIGSe thickness from 2500 nm down to 100 nm, while conserving a high conversion efficiency.Using numerical modeling, we first study the evolution of the photovoltaic parameters when reducing the absorber thickness. A strong decrease of the efficiency of the solar cell is observed, mainly related to a reduced light absorption and carrier collection for thin and ultrathin CIGSe solar cells. Solutions to overcome these problems are proposed and the potential improvements are modeled; we show that front side (buffer layer, antireflection coating) and back side (reflective back contact, light scattering) engineering of an ultrathin device can potentially increase the conversion efficiency up to the level of a standard thick CIGSe solar cell.By using chemical bromine etching on a standard thick CIGSe layer, we realize solar cells with different absorber thicknesses and experimentally study the influence of the absorber thickness on the photovoltaic parameters of the devices. Experiments show a similar trends to that observed in numerical modeling.Front contact engineering on thin CIGSe solar cell is realized to increase the specific absorption in CIGSe, including alternative ZnS buffer, front ZnO:Al window texturation and anti-reflection coating. Substantial improvements are observed whatever the CIGSe thickness, with efficiencies higher that the default configuration.A back contact engineering at low temperature is realized by using an innovative approach combining chemical etching of the CIGSe and mechanical lift-off of the CIGSe from the original Molybdenum (Mo) substrate. New highly reflective materials previously incompatible with the standard solar cell process are used as back contact for thin and ultrathin CIGSe solar cells, and a comparative study between standard Mo back contact and alternative reflective Au back contact solar cells is performed. The Au back reflector significantly enhance the efficiency of solar cell with sub-micrometer absorbers compared to the standard Mo back reflector; an efficiency higher than 10 % on a 400 nm CIGSe is obtained with Au back contact (7.9% with standard Mo back contact). For further reduction of the absorber thickness down to 100-200 nm, numerical modeling show that a lambertian back reflector is needed to fully absorb the incident light in the CIGSe. An experimental proof of concept device with a CIGSe thickness of 200 nm and a lambertian back reflector is realized and characterized by reflection/transmission spectroscopy, and the experimental spectral response is determined by combining simulation and experimentally measured absorption. A short circuit current of 26 mA.cm-2 is determined with the lambertian back reflector, which is much higher than what is obtained for the same device with no reflector (15 mA.cm-2), and comparable to the short circuit current measured on a reference 2500 nm thick CIGSe solar cell (28 mA.cm-2). Lambertian back reflectors are therefore found to be the most effective way to enhance the efficiency of an ultrathin CIGSe solar cell up to the level of a reference thick CIGSe solar cell

Etudes effectuees en vue de preciser la nature des electrons qui participent ala conduction et au magnetisme de ces composes. Les composes, caracterises par la presence d'amas tetraedriques des ions metalliques mo et nb dans les bas etats d'oxydation, revelent des proprietes de magnetisme itinerant repondant au modele de stoner-wohlfarth avec les densites d'etats les plus elevees observees dans des composes intermetalliques 3d ou 4d. La rpe a confirme que les raies observees correspondant aux ions metalliques dans un etat s = 3/2 (ions mo**(3+) et nb**(3+)); leur elargissement est d'origine dipolaire retrecie par echange et les valeurs des integrales d'echange obtenues sont en bon accord avec celles obtenues a partir des temperatures de curie

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The design and optimization of higher efficiency Copper Indium Gallium Selenide (CIGS) solar cells are investigated in this thesis. Optimizing the thickness layers of a cell for various band gaps was conducted in order to design a cell that exceeds the current industry efficiency record of 20.8%. Silvaco provides a modeling program called ATLAS that is specifically designed to model semiconductor devices. ATLAS was used to model a CIGS cell that is currently being produced to verify the validity of the model. Various thicknesses were then swept to determine the optimum thickness for a given band gap. Solar spectrum intensity varies by location around the Earth. Optimizing CIGS cells for various band gaps yields higher overall power output when dealing with drastic climate and location variations. Cells for five band gaps ranging from 1.14 eV to 1.69 eV were optimized in this thesis. The highest achieved efficiency was for a band gap of 1.69 eV with an overall theoretical efficiency of 22.4%.

Theoretical considerations for the use of chalcopyrite ternary I-III-VI₂ compounds in heterojunction photovoltaic conversion devices are presented, followed by an in-depth study of the structural, optical, and electrical characteristics of multi-source evaporated CuGaSe₂ thin films as determined by processing. Film composition was identified as the primary variable for affecting the microstructure and optical-electrical behavior of the films. Film composition was in turn dependent upon elemental flux rates and substrate related effects. Films deposited on glass and bare alumina substrates were richer in selenium than films deposited on molybdenum coated substrates. Cu-poor, near stoichiometeric, and Cu-rich compositions were obtained by varying the Cu/Ga flux ratio. Cu-poor films deposited on bare ceramic substrates were characterized by secondary impurity phase content and a tendency for cubic CuGaSe₂ formation. The cubic nature of optically thin films deposited on glass was substantiated by a lack of crystal field splitting of the valence band as observed by optical absorption measurements. Cubic-tetragonal phase behavior was monitored on optically opaque samples by observation of intensity-independent (112)/(111) x-ray diffraction peak shifts. Cu-poor films on glass were also characterized by surfaces pitting at substrate temperatures in excess of 450°C which may be related to the high surface energy of gallium. Cu-poor films deposited on molybdenum coated alumina substrates exhibited less impurity phase formation and were largely single-phase tetragonal CuGaSe₂. Cu-rich films on all substrates contained CuₓSe impurities and tetragonal CuGaSe₂.

[ES] El objetivo principal de esta tesis es contribuir al avance de nuevas técnicas de elaboración con bajo coste, utilizando materiales tipo de cobre, indio, galio y selenio CIGS y Perovskita para aplicaciones en energía solar fotovoltaica. CIGS parecen ser adecuadas ya que son de bajo costo de producción y se han reportado eficiencias de conversión del 23,35%. Por otro lado, las perovskitas híbridas de haluros de plomo orgánicos-inorgánicos han aparecido como nuevos materiales excepcionales para celdas solares, especialmente porque la eficiencia de las celdas solares basadas en perovskita ha aumentado del 3.8% al 22.7% en menos de un lustro. Este trabajo se ha dedicado a experimentar sobre la elaboración y caracterización de CIGS y los perovskitas de metilamonio de yoduro de plomo de (MAPbI3) y formamidinio de yoduro de plomo (FAPbI3), que se utilizo tanto en la aplicación a las células solares de perovskitas y en las células Tándem CIGS-perovskita. Las películas se caracterizaron por difracción de rayos X, espectroscopía Raman, microscopía electrónica de barrido, análisis de espectroscopía de energía dispersiva, microscopía de fuerza atómica, transmisión electrónica microscopía, fotoluminiscencia y espectroscopia UV-Vis. En las capas de CIGS depositadas por electrodeposición se investigó el efecto de diferentes parámetros, También investigamos en detalle el efecto del contacto posterior en las propiedades estructurales y ópticas de CIGS. Constatamos que el tipo de contacto posterior tiene un efecto significativo en el rendimiento posterior de las películas delgadas CIGS. Además, estudiamos la técnica de espray pirólisis para producir películas CIGS. Se estudió el proceso de recocido, que es el factor clave para mejorar el rendimiento de las células solares. Se elaboraron diferentes películas delgadas constituidas de nuestro dispositivo CdZnS/CdS/CIGS/Mo eso utilizó una capa conductora transparente de CdZnS para minimizar la alineación de la interfaz. Por otro lado, se analizó el proceso de cristalización y la estabilidad de las capas MAPbI3. Las capas de MAPbI3 se trataron añadiendo antisolvente a diferentes velocidades. Durante el tratamiento se producen intercambios complejos que influencian muchas propiedades fisicoquímicas. Se investigaron las propiedades ópticas y eléctricas de las películas de MAPbI3. Para mejorar la estabilidad de MAPbI3, se incorporó tetrabutilamonio (TBA), observando una mejora en la formación de la estructura perovskita que crece en la dirección preferente (110). La fase cristalina de MAPbI3 dopada con TBA presenta mejor cristalinidad, gran tamaño de grano, morfología superficial sin poros lo que es adecuado para la fabricación de dispositivos optoelectrónicas con mayor rendimiento. Además, hemos identificado el impacto de TBA en las propiedades foto físicas de MAPbI3. En las muestras de TBA:MAPbI3 aumenta la intensidad de la fotoluminiscencia al reducir la densidad de los estados de trampa y la absorción óptica muestra un cambio significativo hacia longitudes de onda más largas y la banda prohibida óptica varió de 1.8 a 1.52 eV. Finalmente, las muestras dopadas con 5% TBA mejoraron su estabilidad y se encontró que después de 15 días la estabilidad permanecía excelente en una humedad de ~ 60%. Por otra parte, investigamos el efecto de guanidinio (GA) sobre las propiedades estructurales y ópticas de FAPbI3. La relación entre la fase a de perovskita deseable y la fase indeseable y se ha estudiado en función del contenido de GA. Se comprobó que el dopaje con GA es eficaz en el control de la relación de fases a/y y luego en la estabilización de la fase a. Los resultados muestran que añadiendo una cantidad adecuada del 10% GA conduce a una mejora de película de perovskita que se evidencia en la homogeneidad de la fase a estable, granos de mayor tamaño y capas libres de poros. Además, 10% GA:FaPbI3 demostraron una excelente estabilidad después de ser envejecidas durante 15 días en un ambiente con humedad relativa del 60%.
[EN] The thesis work presented is part of the work in the Laboratory of New Materials for Photovoltaic Energy in the main target to use low cost techniques for elaboration of Perovskite and Copper, indium, gallium, and selenium CIGS materials for photovoltaic application. Organic-inorganic lead halides perovskites have currently and exceptionally appeared as new materials for low cost thin film solar cells specially that the efficiency of perovskite based solar cell have jumped from 3.8% to 22.7% in short time.in other hand, CIGS solar cells record 23.35% efficiency and still can be boosted. Here, we report the elaboration and characterization of CIGS as well as methylammonium lead iodide perovskites MAPbI3 and formamidinuim iodide lead iodide perovskites FAPbI3 absorbers for perovskite-based solar cells and Tandem Perovskites/ CIGS. The thin films prepared were characterized by X-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) analysis, atomic force microscopy (AFM), transmission electron microscopy (TEM), Photoluminescence analysis (PL) and UV-Vis spectroscopy. The first stage was devoted for the effect of different parameters on the growth of CIGS by electrodeposition and we investigate the impact of different back contact in structural and optical proprieties. In a second stage, we report the growth of CIGS films by spray pyrolysis, we studied the effect of experimental parameter also the annealing process which is the key factor for improving the performance of solar cells,subsequently we elaborated different films constituted CdZnS/CdS/CIGS/Mo solar cells, the approach is to change the toxic ZnO by using a transparent, conductive CdZnS layer. In other hand, MAPbI3 film was investigated in order to optimize the chemical composition and to study the crystallization process also to get sight about the stability of perovskite materials to meet the requirement of their application as an active layer in perovskite solar cell. For this purpose. the MAPbI3 film surface was treated by adding diethyl ether antisolvent with different rates. during the treatment complex exchanges are appearing at the same time under the influence of quite a lot of physicochemical properties. A whole understanding of this topic is critically important for improving solar cell performance. MAPbI3 doped by the tetrabutylammonium TBA is boosting the formation of perovskite structure, leading to a higher orientation along the (110) and shows better crystallinity, large grain size, pinhole-free, which is suitable for the manufacturing of the optoelectronic devices with higher performance. Also, we have identified the impact of TBA in the photo-physical properties, we have noticed that the TBA improve the photoluminescence emission by reducing the density of trap states and the optical absorption indicates a significant shift to the lower wavelength and optical bandgap varied from 1.8 to 1.52 eV. Finally, the stability was explored for 5% TBA, it found that after 15 days the stability remained excellent in relative humidity of ~60%. These results would be helpful for realizing stable and high performance MAPbI3-based devices. Furthermore, we inspect the effect of monovalent cation substitution of Guanidinium (GA) on the structural and optical properties of FAPbI3 thin films perovskites. The ratio between the desirable a-phase and the undesirable y yellow phase is studied as a function of GA content. GA doping is shown to be efficient in the control of a/y phases ratio and then in the stabilization of the a-FaPbI3 phase. We qualitatively evaluate the impact of 10% of guanidinium on the phase composition and microstructure of films. The results show that an adequate amount of 10% GA:FaPbI3 leads to a homogeneous perovskite film with stable a phase, large grains, and free pinholes. 10% GA: FaPbI3 films demonstrate excellent stability after aging for 15 days in relative humidity of~60%.
[CA] L'objectiu principal d'aquesta tesi és contribuir a l'avanç de noves tècniques d'elaboració de baix cost, fent servir materials d'aliatges del tipus de coure, indi, gal·li i seleni (CIGS) i perovskites, per a aplicacions en energia solar fotovoltaica. El CIGS sembla ser adequat ja que són de baix cost de producció i s'han reportat eficiències de conversió del 23,35%. D'altra banda, les perovskites híbrides d'halurs de plom orgànics-inorgànics han aparegut com a nous materials excepcionals per cel·les solars, especialment perquè l'eficiència de les cel·les solars basades en perovskites ha augmentat del 3.8% al 22.7% en menys d'un lustre. En el present treball, reportem l'elaboració i caracterització de CIGS y de perovskitas de iodur de plom de metilamoni (MAPbI3) i de iodur de plom de formamidini (FaPbI3) per a les cèl·lules solars de CIGS i tàndem Perovskites/CIGS. En les capes de CIGS dipositades per electrodeposició es va investigar l'efecte dels diferents paràmetres sobre el procés d'electrodeposició, així com l'efecte del contacte posterior sobre les propietats estructurals i òptiques del CIGS. Ens trobem que el tipus de contacte posterior té un efecte significatiu en la posterior interpretació de pel·lícules primes CIGS. A més, vam estudiar la tècnica de polvorització de la piròlisi per produir pel·lícules de CIGS. Es va estudiar el procés de recuit, que és el factor clau per millorar el rendiment de les cèl·lules solars. Es van produir diferents pel·lícules fines formades pel nostre dispositiu CdZnS/CdS/CIGS/Mo que utilitzaven una capa conductiva CdZnS transparent per minimitzar l'alineació de la interfície. D'altra banda, es van investigar perovskites MAPbI3, amb la finalitat d'optimitzar la composició química i estudiar el procés de cristal·lització també per a conèixer l'estabilitat dels materials de perovskita. la cristal·lització s'aconsegueix alentint la solubilitat en una solució saturada mitjançant l'addició d'una quantitat diferent de l'antisolvent d'èter dietílic. Durant el tractament apareixen al mateix temps intercanvis complexos sota la influència de moltes propietats fisicoquímiques. Una comprensió completa d'aquest tema és de vital importància per a millorar el rendiment. Amb l'objectiu principal d'augmentar l'estabilitat de MAPbI3, el tetrabutilamoni (TBA) es pot incorporar a MAPbI3, impulsant la formació de l'estructura de perovskita, la qual cosa porta a una major orientació al llarg de (110). MAPbI3 dopades amb TBA presenten una millora de la cristalinitat, major grandària, la qual cosa és adequada per a la fabricació de dispositius optoelectròniques de major rendiment. A més, hem identificat l'impacte de TBA en les propietats foto físiques de MAPbI3. Hem notat que el dopatge amb TBA millora tant l'emissió de la fotoluminiscència en reduir la densitat dels estats de trampes com l'absorció òptica on apareix un canvi significatiu de la banda òptica prohibida cap a longituds d'ona més llargues que significa disminuir l'energia del gap, que va variar de 1.8 a 1.52 eV. Finalment, es va explorar l'estabilitat per les perovsquites dopades amb 5%TBA. Es va trobar que després de 15 dies l'estabilitat romania excel·lent en un humitat de 60%. A més, hem estudiat FAPbI3 com un dels materials de perovskita més atractius. Hem investigat l'efecte de la substitució de guanidini (GA) sobre les propietats estructurals i òptiques de FAPbI3. La relació entre la fase a de perovskita desitjable i la fase indesitjable y es va estudiar en funció del contingut de GA. Es mostra que el dopatge amb GA és eficaç en el control de la relació de fases a /y i després en l'estabilització de la fase a-FaPbI3. Els resultats mostren que una quantitat adequada de 10% GA condueix a una pel·lícula homogènia amb fase a estable, grans grans lliures de porus i forats. Les pel·lícules de 10% GA:FaPbI3 demostraren una excel·lent estabilitat després de l'envelliment durant 15 dies en un ambient humit (humitat relativa de 60%).
Bouich, A. (2020). Study and Characterization of Hybrid Perovskites and Copper-Indium-Gallium Selenide thin films for Tandem Solar Cells [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/160621
TESIS

A compact optical terahertz (THz) source was demonstrated based on an efficient high-repetition-rate doubly resonant optical parametric oscillator (OPO) around 2 mu m with two type-II phase-matched KTP crystals in the walk-off compensated configuration. The KTP OPO was intracavity pumped by an acousto-optical (AO) Q-switched Nd:YVO4 laser and emitted two tunable wavelengths near degeneracy. The tuning range extended continuously from 2.068 mu m to 2.191 mu m with a maximum output power of 3.29 W at 24 kHz, corresponding to an optical-optical conversion efficiency (from 808 nm to 2 mu m) of 20.69%. The stable pulsed dual-wavelength operation provided an ideal pump source for generating terahertz wave of micro-watt level by the difference frequency generation (DFG) method. A 7.84-mm-long periodically inverted quasi-phase-matched (QPM) GaAs crystal with 6 periods was used to generate a terahertz wave, the maximum voltage of 180 mV at 1.244 THz was acquired by a 4.2-K Si bolometer, corresponding to average output power of 0.6 mu W and DFG conversion efficiency of 4.32x10(-7). The acceptance bandwidth was found to be larger than 0.35 THz (FWHM). As to the 15-mm-long GaSe crystal used in the type-II collinear DFG, a tunable THz source ranging from 0.503 THz to 3.63 THz with the maximum output voltage of 268 mV at 1.65 THz had been achieved, and the corresponding average output power and DFG conversion efficiency were 0.9 mu W and 5.86x10(-7) respectively. This provides a potential practical palm-top tunable THz sources for portable applications.

Thesis (Ph.D.)--University of Delaware, 2007.
Principal faculty advisor: Babatunde Ogunnaike, Dept. of Chemical Engineering, and Robert W. Birkmire, Dept. of Materials Science & Engineering. Includes bibliographical references.

Philosophiae Doctor - PhD
Electroanalytical and optical properties of nanoscale materials are very important for biosensing applications as well as for understanding the unique one-dimensional carrier transport mechanism. One-dimensional semiconductor nanomaterials such as semiconductor quantum dots are extremely attractive for designing high-density protein arrays. Because of their high surfaceto-volume ratio, electro-catalytic activity as well as good biocompatibility and novel electron transport properties make them highly attractive materials for ultra-sensitive detection of biological macromolecules via bio-electronic or bio-optic devices. A genosensor or gene based biosensor is an analytical device that employs immobilized deoxyribonucleic acid (DNA) probes as the recognition element and measures specific binding processes such as the formation of deoxyribonucleic acid-deoxyribonucleic acid (DNA-DNA), deoxyribonucleic acid- ribonucleic acid (DNA-RNA) hybrids, or the interactions between proteins or ligand molecules with DNA at the sensor surface.In this thesis, I present four binary and two ternary-electrochemically and optically modulated selenide and telluride quantum dots, all synthesised at room temperature in aqueous media. Cationic gallium (Ga3+) synthesized in form of hydrated gallium perchlorate salt[Ga(ClO4)3.6H2O] from the reaction of hot perchloric acid and gallium metal was used to tailor the optical and electrochemical properties of the selenide and telluride quantum dots. The synthesized cationic gallium also allowed successful synthesis of novel water soluble and biocompatible capped gallium selenide nanocrystals and gallium telluride quantum dots. Cyclic voltammetric studies inferred that presence of gallium in a ZnSe-3MPA quantum dot lattice improved its conductivity and significantly increased the electron transfer rate in ZnTe-3MPA.Utraviolet-visible (UV-vis) studies showed that incorporation of gallium into a ZnSe-3MPA lattice resulted in a blue shift in the absorption edge of ZnSe-3MPA from 350 nm to 325 nm accompanied by decrease in particle size. An amphiphilic bifunctional molecule, 3-Mercaptopropionic acid (3-MPA) was used as a capping agent for all quantum dots. It was found that 3-MPA fully solubilised the quantum dots, made them stable, biocompatible, non agglomerated and improved their electron transfer kinetics when immobilized on gold electrodes.Retention of the capping agent on the quantum dot surface was confirmed by Fourier transform infrared spectroscopy (FTIR) which gave scissor type bending vibrations of C-H groups in the region 1365 cm-1 to 1475 cm-1, stretching vibrations of C=O at 1640 cm-1, symmetric and asymmetric vibrations of the C-H in the region 2850 cm-1 to 3000 cm-1 as well as stretching vibrations of –O-H group at 3435 cm-1. The particle size and level of non-agglomeration of the quantum dots was studied by high resolution transmission electron microscopy (HRTEM). The optical properties of the quantum dots were studied using UV-vis and fluorescence spectroscopic techniques.Quantum dot/nanocrystal modified gold electrodes were prepared by immersing thoroughly cleaned electrodes in the quantum dot/nanocrystal solution, in dark conditions for specific periods of time. The electrochemical properties of the modified electrodes were characterized by cyclic voltammetry (CV), square wave voltammetry (SWV), electrochemical impedance and spectroscopy (EIS). Six sensing platforms were then prepared using quantum dot/nanocrystal, one of which was used for detection of dopamine while the rest were used for detection of a DNA sequence related to 5-enolpyruvylshikimate-3-phosphate synthase, a common vector gene in glyphosate resistant transgenic plants.The first sensing platform, consisting of ZnSe-3MPA modified gold electrode (Au|ZnSe-3MPA) gave rise to a novel method of detecting dopamine in presence of excess uric acid and ascorbic acid. Using a potential window of 0 to 400 mV, the ZnSe-3MPA masked the potential for oxidation of uric and ascorbic acids, allowing detection of dopamine with a detection limit of 2.43 x 10-10 M (for SWV) and 5.65 x 10-10 M (for steady state amperometry), all in presence of excess uric acid (>6500 higher) and ascorbic acid (>16,000 times higher). The detection limit obtained in this sensor was much lower than the concentration of dopamine in human blood(1.31 x 10-9 M), a property that makes this sensor a potential device for detection of levels of dopamine in human blood.The other sensing platforms were prepared by bioconjugation of amine-terminated 20 base oligonucleotide probe DNA (NH2-5′-CCC ACC GGT CCT TCA TGT TC-3′) onto quantum dot modified electrodes with the aid of 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDC) and N-hydroxysuccinimide (NHS). The prepared DNA electrodes were electrostatically hybridized with different sequences which included 5′-GAA CAT GAA GGA CCG GTG GG-3′ (complementary target), 5′-CATAGTTGCAGCTGCCACTG-3′ (non complementary target) and 5′-GATCATGAAGCACCGGAGGG-3′ (3-base mismatched target).The hybridization events were monitored using differential pulse voltammetry (DPV) and SWV by monitoring the guanine oxidation signal or using EIS by monitoring changes in the charge transfer resistance. The quantum dot genosensors were characterized by low detection limits (in the nanomolar range), long linear range (40 - 150 nM) and were able to discriminate among complementary, non-complementary and 3-base mismatched target sequences.

L'etude des echantillons massifs de cuin::(1-x)ga::(x)se::(2) de type p permet de mettre au point la solution electrolytique acide en presence du couple redix v**(2+/3+). Etude des positions energetiques des bandes par mesures capacitives. Etude de la variation de la bande interdite en fonction de x et mesure des longueurs de diffusion par l'evolution du photocourant en fonction du potentiel. Etude des proprietes optiques et electroniques des couches minces cugase::(2) de type p en fonction des ecarts a la stoechiometrie

The objective of this study is analysing the characteristics of five different solar cell technologies regarding their efficiency, fill factor, cost and environmental impacts and comparing their improvement records over years considering their efficiency. The five solar cell technologies of interest are amorphous silicon, monocrystalline silicon, polycrystalline silicon, cupper indium gallium selenide thin film and cadmium telluride thin film. The structure and manufacturing process of each of cell technologies were discussed. The study was conducted by the aid of available scientific reports regarding the electrical characteristics of different solar cell technologies. The extracted information regarding efficiency rate and fill factor was analysed using graphs and significant findings are discussed. The five technologies are also compared regarding their cost and ease of fabrication and their impacts on environment and recycling challenges. The result of this study is suggesting the most promising technology that may be the optimal option for further investment and research.

碩士
國立中山大學
電機工程學系研究所
102
Low cost and high efficiency are continuous interests for the fabrication of solar cells. I-III-VI compound semiconductor Cu(In,Ga)Se2 (CIGS) is the most important absorber material in developing thin film solar cells. The band gap of CIGS varies from about 1.0 to 1.7 eV, which is within the maximum solar absorption region. This is very important for the optimum conversion efficiency. The extraordinarily high absorption coefficient from direct band gap leads to thinner thickness and lower fabrication cost for its use in thin film solar cells. In this experiment, we deposited CuInGa and Cu(In,Ga)Se2 alloy layers on soda-lime glasses by RF sputtering separately and then used selenization process to form Cu(In,Ga)Se2 thin films. We study the effects of selenized temperatures and processes on the qualities and characteristics of CIGS thin film.

Thesis (M.S.)--State University of New York at Buffalo, 2007.
Title from PDF title page (viewed on June 17, 2008) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Cerne, John. Includes bibliographical references.

A number of different methods for electrically characterizing ZnSe thin films are presented. These include the Hall effect, current-voltage profiling, and capacitance-voltage profiling. The planar Schottky technique is used to analyze p-type ZnSe. The conductance method of Nicollian and Brews is applied for the first time to the ZnSe/GaAs MIS system to find the surface state density profile and the time constants associated with particular states. A novel photowash technique is used to make the GaAs surface gallium rich before ZnSe growth. Electron Paramagnetic Resonance is discussed in the context of probing thin film semiconductors. Room temperature mobilities for undoped, 1 $\rm\mu m,$ ZnSe films grown by Laser-assisted Metal Organic Chemical Vapor Deposition are as high as 309 $\rm cm\sp2/V$-s. Measured mobilities at 77 K are low due to hole conduction in p-type GaAs at the interface. Heterojunction barrier heights are found to be in the range of 0.6-0.9 eV and are most likely due to interface traps. Schottky diode n-values are found to be high ($>$30) because of the heterojunction barrier. P-type conduction in the nitrogen-doped samples has not been found. Undoped ZnSe is n-type and is typically depleted of carriers. Surface state densities for both untreated and Ga-rich ZnSe/p-GaAs interfaces are found to be in the range of $10\sp{12}$ $\rm cm\sp{-2}$-$\rm eV\sp{-1}.$

碩士
國立交通大學
電子物理系所
107
Regardless of the dissimilarity in their crystal symmetry, the two-dimensional GaSe of different structure phases grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. Attributing to this mechanism, the spiral-pyramidal structure of 2D GaSe layers was typically observed. Investigations on Raman spectroscopy and temperature-dependent photoluminescence indicated that the structure has been suffered an amount of in-plane tensile strain due to the stacking disorders between monolayer at the boundaries of the 2D GaSe nanoflakes as well as the screw-dislocation-driven growth mode. In addition, Raman spectra under various wavelength laser excitations explored the common ε-phase of 2D GaSe materials grown directly on GaAs(001) which can be transformed into the β-phase by introducing a Se-pretreatment period at the initial growth process. This work provides an understanding of MBE growth of 2D layered materials on three-dimensional substrates and paves the way to realize future electronic and optoelectronic heterogeneous integrated technology as well as second harmonic generation applications.

碩士
國立交通大學
電子物理系所
107
Two-dimensional material gallium selenide (GaSe) films were grown on sapphire, gallium nitride and gallium arsenide substrates by molecular beam epitaxy. The optical properties of GaSe films were analyzed by the Raman spectroscopy. The Effects of growth conditions, different substrate temperatures, Se/Ga flux ratio and epitaxial time, on the epitaxial morphology and Raman spectrum were studied. The pyramidal structure of GaSe indicates that its growth mechanism is layer-by-layer growth. A structure change, from pyramid to closed-loop triangular structure, with the increasing epitaxial time was observed. The closed-loop triangular structure is caused by the concentric multilayer growth, which accompanies a lift of the GaSe E_2g^1 mode degeneracy in the Raman spectrum. It implies the presence of in-plane stress, which results in the change of growth mechanism of GaSe.

碩士
國立交通大學
照明與能源光電研究所
99
The bi-layer structure of Molybdenum back contact was deposited under higher working pressure and lower working pressure respectively. The one deposited at higher working pressure had good adhesion, and the one deposited at lower working pressure had low resistivity. Mo with bi-layer structure had a low resistivity 2.12x10-5Ω-cm. By measuring the I-V curve for Mo/CIGS/Mo structure, the results shows that Mo/CIGS interface form a good ohmic contact. 　　The properties of CIGS absorber layers were affected by precursors and selenization process. As the process temperature increased, the CIGS film had larger grain size. Compared the analysis of composition, we could sum up the Cu composition was coherent with grain size. 　　From the Raman spectrum analysis, high process temperature could suppress Cu2Se signal and CIGS-CA signal. The various cooling time experiment showed the cooling time longer than 20 min could suppress the formation of binary compounds. The large-area (30cm x 40cm) Mo/CIGS could be also prepared by sputtering/non-toxic selenization process. 　　Because the Cu2Se was harmful for device, it had to be removed from CIGS films’ surface. KCN etching could remove Cu2Se from CIGS films’ surface but the etching process caused the CIGS films’ surface roughed. Rough surface caused poor CdS coverage. To estimate the influence of roughness, the following study was to optimize CdS layer. The optimization results could sum up the best deposition time was 42-47 min with thickness 60-80nm. 　　We studied various composition of CIGS film. Open voltage had positive relativity with Ga/(Ga+In) ratio (GGI). However the lower GGI ratio could increase the ideal factor, it showed the recombination current dominative. Compare the performance of the devices under illuminate and in the dark. The shunt conductance under illuminate was higher for one order of magnitude than in the dark. 　　We measured the absorption coefficient to calculate the band gap of ZnO and AZO. The band gap of ZnO and AZO was 3.19eV and 3.55eV respectively. Compared with EQE plot, we could effectively improve the performance of the device.

碩士
國立高雄應用科技大學
工業工程與管理系
100
In times of the rapid development of current information, technology products have been ever changing relentlessly, and in the manufacture production it also constantly attempts to make the better best. On the contrary, while the traditional mass production seeks to reduce cost, it often results in huge inventory. Worse, if the global economy is in the recession, or the competition is stiff resulting in the poor sale for the firm, the excess stock is not a company asset but becomes its big debt. In more than a decade, to cope with this kind of dilemma, the theory of constraints (TOC) is often applied to improving the traditional production management model so that the business production performance can be effectively enhanced. In recent years, the range of the application of the TOC is getting wider, from the early stage of manufacturing industry to the current service industry, the contribution of which is really very huge with respect to cost effectiveness. On the other hand, although the TOC model is enormously used for factory practices, the establishment and application of a complete TOC model is limited. For the complex floor shop production factory, the bottle capacity determines the whole production process capacity. Through the TOC, the capacity can be used to find out the bottle of the whole process. Thus, the rationale of the TOC is through the control and management of the bottle to achieve the output increase, and the stock and operation expenditure reduction. This study aims to use factory practice as a case study, where by building the TOC model, in discussing the factory in the current production management, focusing on the problems encountered, we submit a set of systematic management procedure of TOC, step by step find out the core problems, inspire solution alternatives, and then build a complete implementation plan. In such TOC process, via continual-improving five steps, plus Drum-Buffer-Rope (DBR) scheduling rule, the capacity of bottleneck process station can be maximized, or the waste can be minimized. In doing so, they can be compared with the traditional scheduling rule to understand the increasing degree of long-term performance of each process. As to this research case, the results show that the production performance has been significantly enhanced by the application of the TOC, which can provide managers for the reference of running business.

Thesis (Ph.D.)--State University of New York at Buffalo, 2006.
Title from PDF title page (viewed on Mar. 02, 2007) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Petrou, Athos. Includes bibliographical references.

碩士
國立臺灣科技大學
化學工程系
97
The study is divided into two parts, including synthesis of CuIn1-xGaxSe2 nanomaterials and preparation of CuIn1-xGaxSe2 thin films. First, novel CuIn1-xGaxSe2 nanoparticles have been successfully prepared by the developed microwave-assisted hydrothermal method. The developed method avoids the use of the organic solvents in the frequently used solvothermal method. Further, uniform CuIn1-xGaxSe2 nanoparticles of exact stoichiometric ratio can be prepared within 30 mins, showing the high efficiency of the developed method. It should be noticed that the amorphous nature for the synthesized CuIn1-xGaxSe2 nanoparticles is shown. However, the chalcopyrite structure for the synthesized CuIn1-xGaxSe2 particles can be obtained after further reduction and selenization. Undoubtedly, the developed microwave-assisted hydrothermal method is environment-friendly and the synthesized CuIn1-xGaxSe2 is of great potential as an absorption layer of thin film CIGS solar cell. Secondly, the controllable thickness of the film fabricated by EPD technique was carried out with the synthesized CuIn1-xGaxSe2 precursors. With further reduction and selenization process the synthesized CuIn1-xGxSe2 showed only chalcopyrite structure without any impurities. Owing to the limited heating conditions by the melting temperature of the glass substrate (600℃) for longer time (10 hr), the porous nature of the deposited film needs further improvement. Surprisingly, the high porosity can be reduced by increasing Ga content in the CuIn1-xGaxSe2. The finding can be the guide for the future improvement. On the other hand, theoretical X-ray diffraction patterns, electronic band structure, and charge transfer among hetero-atoms have been achieved by model establishment accompanied with density functional theory (DFT) calculation on CuIn1-xGaxSe2. Further, the effect of Ga doping in CuIn1-xGaxSe2 to distortion of crystalline structure and change in the energy gap can be understood. The strategy could be further extended to the understanding of other elements (M) doping effect for CuIn1-xMx Se2.

碩士
國立臺灣科技大學
化學工程系
98
We try to develop a process to fabrication of thin film CIGS solar cells from aqueous slurry based on copper indium gallium selenite (CIGSO) precursor. The study consists of four major parts. The first part is to synthesize the CIGSO precursor with amorphous structure in large quantity use microwave-assisted hydrothermal route. Through a bigger reactor, we increased the production efficiently by adjusting the output power, reaction time and temperature. The developed method is considered to be a high potential for further applications. The issues associated with the mixing and dispersion of water-based slurry was performed in the second part. By measuring the Zeta-potential of the solution under different pH values, the influences of different solid contents, dispersants, and mechanical treatment as well as the selection and combination of these factors were closely examined.In the third part, the deposition of the precursor layer by automatic doctor-blade coating machine was performed. A pre-heating process follows to remove organic dispersant from the cast film, so that the film composition and crystal growth will not be deteriorated. Finally, the dried film was annealed at 550 ℃under the selenium vapor atmosphere to form dense and uniform CIGS absorber layer. We used SEM to see the morphology and the cross-section of films before and after the selenization. EDX and XRD measurement were carried out for composition and crystal structure analysis respectively. The results confirm that the film has a composition close to the designed stoichiometric ratio and exhibits a chalcopyrite crystal structure.Finally, we have successfully developed an efficient process for fabrication of thin film CIGS absorber layer. These characteristics of the developed method open up a new perspective to develop a non-vacuum production for CIGS thin film solar cells.

碩士
國立勤益科技大學
機械工程系
99
The paper is divided into two parts: 1.of the buffer layer, the material use of free-cadmium compounds ZnS, and using chemical bath prepared by sputtering. 2. absorption layer the use Cu0.9In1Ga0.3 (referred to as CIG) ternary alloy targets, combined with the sputtering CIG precursor film and the preparation of solid selenium CIGS thin film manufacturing process. By surface profiler, respectively, field emission scanning electron microscope, four-point probe, X-ray diffraction and UV / visible spectrometer to observe the film thickness, surface and profile morphology, structural characteristics, composition and optical penetration etc., to understand the basic characteristics of the material. Sputtering-prepared ZnS thin films analysis, thin film (002) diffraction summit with the substrate temperature and sputtering power increases in the penetration areas are more than 80% of its energy gap of 3.8eV. Prepared chemical bath of ZnS thin films analysis, the changes will affect the ammonia concentration in the energy gap value, ammonia concentration decreased, the energy gap becomes larger and the smaller grains. Changes in the concentration of hydrazine would affect the grain size, concentration gradually increased, the thinner the film thickness is deposited more slowly. CIG precursor film in the main structure of the Cu11(In,Ga)9, and at 80W sputtering power available when the surface smooth and dense film structure, the selenium process of the formation of CIGS films are chalcopyrite structure, and with (112) preferred orientation.

Indiana University-Purdue University Indianapolis (IUPUI)
In this research thesis, copper indium gallium selenium (CIGS) nanoparticles were synthesized from metal chlorides, functionalized to disperse in water, and further used in layer by layer (LbL) nanoassembly of CIGS films. CIGS nanoparticles were synthesized through the colloidal precipitation in an organic solvent. The peak and average sizes of the synthesized particles were measured to be 68 nm and 75 nm in chloroform, and 30 nm and 115 nm in water, respectively. Two methods were used to disperse the particle in water. In the first method the stabilizing agent oleylamine (OLA) was removed through multiple cleaning processes, and in the second method ligand exchange was performed with polystyrene sulfonate (PSS). Zeta potential of CIGS nanoparticles dispersed in water was measured to be +61 mV. The surface charge of the nanoparticles was reversed by raising the pH of the solution, which was measured to be −43.3 mV at 10.5 pH. In a separate process, the CIGS nanoparticles dispersed in water were coated with PSS. The resulting dispersion was observed to be stable and the surface charge was measured to be −56.9 mV. The LbL deposition process of CIGS nanoparticles was characterized by depositing thin films on quartz crystal microbalance (QCM). LbL depositions was conducted using (i) oppositely charged CIGS nanoparticles, (ii) positively charged CIGS nanoparticles and PSS, and (iii) PSS-coated CIGS (CIGS-PSS) and polyethyleneimine (PEI). The average thickness of each bi-layer of the above mentioned depositions were measured to be 2.2 nm, 1.37 nm, and 10.12 nm, respectively. The results from the QCM have been observed to be consistent with the film thickness results obtained from atomic force microscopy (AFM). Various immersion times versus thickness of the film were also studied. For electrical characterization, the CIGS films were deposited on indium tindioxide (ITO)-coated glass substrates. Current versus voltage (I/V) measurements were carried out for each of the films using the Keithley semiconductor characterization instruments and micromanipulator probing station. It was observed that the conductivity of the films was increased with the deposition of each additional layer. The I/V characteristics were also measured under the light illumination and after annealing to study the photovoltaic and annealing effects. It was observed that under light illumination, the resistivity of a 12-layer CIGS film decreased by 93% to 0.54 MΩ.m, and that of the same number of layers of PSS-coated CIGS and PEI film decreased by 60% to 0.97 MΩ.m under illumination. The resistivity of an 8-layer CIGS and PSS film decreased by 76.4% to 0.1 MΩ.m, and that of the same layers of PSS-coated CIGS and PEI decreased by 87% to 0.07 MΩ.m after annealing. The functionalized nanoparticles and the LbL CIGS films were implemented in the solar cell devices. Several configurations of CIGS films (p-type), and ZnO and CdS films (n-type) were considered. Poly(3,4-ethylenedioxythiophene) (PEDOT), molybdenum (Mo), and ITO were used as back contacts and ITO was used as front contact for all the devices. The devices were characterized the Keithley semiconductor characterization instruments and micromanipulator probing station. For a CIGS and n-ZnO films device with PEDOT as back contact and ITO as front contact, the current density at 0 V and under light illumination was measured to be 60 nA/cm2 and the power density was measured to be 0.018 nW/cm2. For a CIGS and CdS films device with ITO as both back and front contact, the current density at 0 V and under light illumination was measured to be 50 nA/cm2 and the power density was measured to be 0.01 nW/cm2. For a drop-casted CIGS and CdS films device with Mo as back contact and ITO as front contact, the current density of 50 nA/cm2 at 0 V and power density of 0.5 nW/cm2 under light illumination was measured. For the LbL CIGS and chemical bath deposited CdS films device with ITO as both back and front contact, the current density of 0.04 mA/cm2 at 0 V and power density of 1.6 μW/cm2 under light illumination was measured. Comparing to Device-III, an increase by 99% in the power density was observed by using the CIGS LbL film in the device structure. The novel aspects of this research include, (i) functionalization of the CIGS nanoparticles to disperse in water including coating with PSS, (ii) electrostatic LbL deposition of CIGS films using oppositely charged nanoparticles and polymers, and (iii) the utilization of the fabricated LbL CIGS films to develop solar cells. In addition, the n-type cadmium sulfide film (CdS) and zinc oxide (ZnO) buffer layer were also deposited through LbL process after the respective particles were functionalized with PSS coating in separate experiments.