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Relevant bibliographies by topics / GaN Diodes

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Dissertations / Theses

Academic literature on the topic 'GaN Diodes'

Author: Grafiati

Published: 6 September 2023

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Dissertations / Theses on the topic "GaN Diodes"

1

Li, Zonglin, and 李宗林. "Reliability study of InGaN/GaN light-emitting diode." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224155.

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2

Li, Zonglin. "Reliability study of InGaN/GaN light-emitting diode." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224155.

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3

Sharma, Nikhil. "Characterisation of InGaN/GaN light emitting diodes." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621315.

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4

Wang, Ke, and 王科. "Some experimental studies of n-type GaN and Au/GaN contacts." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B26663612.

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5

Bavencove, Anne-Laure. "Réalisation de diodes électroluminescentes à base de nanofils GaN." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENY037/document.

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Ces travaux de thèse portent sur l'évaluation des propriétés de nanofils InGaN/GaN en vue de la réalisation de diodes électroluminescentes (LEDs). Deux types d'architecture, obtenus par des techniques de croissance différentes, ont été étudiés. La technique MBE a conduit à la réalisation de LEDs en structure axiale émettant du domaine spectral bleu au rouge. Les émetteurs uniques présentent dans ce cas des diamètres typiquement inférieurs à 100 nm. La technique MOCVD a conduit quant à elle la fabrication de LEDs émettant des longueurs d'onde plus courtes à partir d'hétérostructures InGaN/GaN e

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6

Xu, Hui Park Minseo. "Fabrication and electrical/optical characterization of bulk GaN-based Schottky diodes." Auburn, Ala, 2009. http://hdl.handle.net/10415/1871.

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7

Feng, Jian. "Power improvement of the InGaN/GaN LED /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20FENG.

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8

Pope, Iestyn A. "Characerisation of Ingan gan quantum well light emitting diodes." Thesis, Cardiff University, 2004. http://orca.cf.ac.uk/55927/.

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By focussing on the properties of InGaN/GaN quantum well (QW) LEDs the key physical processes relevant to all InGaN/GaN light emitters are studied. These include the strength of the piezoelectric field, the important current pathways and the effect doping densities and anneal temperatures have on device performance. Photocurrent absorption spectra, of 35A Ino.1Gao.9N QW LEDs, were measured for a range of reverse bias. A bias of 8.5 V was necessary to counteract the affect of the internal piezoelectric field. Using this value and an appropriate approximation for the depletion width of a p-z'-n

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9

Wang, Xianghua, and 王向华. "Design and laser fabrication of GaN/sapphire light-emitting diodes." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45143079.

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10

Watson, Scott. "High speed systems using GaN visible LEDs and laser diodes." Thesis, University of Glasgow, 2016. http://theses.gla.ac.uk/7205/.

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Visible light communication is a developing technology making use of light-emitting diodes (LEDs) and laser diodes in the visible spectrum for communication purposes. This thesis looks at the use of gallium nitride (GaN) devices for high speed measurements in free space, through fibre and underwater. Micro-pixellated LEDs (micro-LEDs) have been used as a source for these measurements and the different ways to drive these devices is explored. LEDs are limited in how fast they can be driven and therefore laser diodes are also considered for these high speed measurements. The frequency responses

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