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Dissertations / Theses on the topic 'GaN Diodes'

Author: Grafiati

Published: 6 September 2023

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1

Li, Zonglin, and 李宗林. "Reliability study of InGaN/GaN light-emitting diode." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224155.

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Li, Zonglin. "Reliability study of InGaN/GaN light-emitting diode." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224155.

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3

Sharma, Nikhil. "Characterisation of InGaN/GaN light emitting diodes." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621315.

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Wang, Ke, and 王科. "Some experimental studies of n-type GaN and Au/GaN contacts." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B26663612.

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Bavencove, Anne-Laure. "Réalisation de diodes électroluminescentes à base de nanofils GaN." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENY037/document.

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Ces travaux de thèse portent sur l'évaluation des propriétés de nanofils InGaN/GaN en vue de la réalisation de diodes électroluminescentes (LEDs). Deux types d'architecture, obtenus par des techniques de croissance différentes, ont été étudiés. La technique MBE a conduit à la réalisation de LEDs en structure axiale émettant du domaine spectral bleu au rouge. Les émetteurs uniques présentent dans ce cas des diamètres typiquement inférieurs à 100 nm. La technique MOCVD a conduit quant à elle la fabrication de LEDs émettant des longueurs d'onde plus courtes à partir d'hétérostructures InGaN/GaN e

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Xu, Hui Park Minseo. "Fabrication and electrical/optical characterization of bulk GaN-based Schottky diodes." Auburn, Ala, 2009. http://hdl.handle.net/10415/1871.

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Feng, Jian. "Power improvement of the InGaN/GaN LED /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20FENG.

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Pope, Iestyn A. "Characerisation of Ingan gan quantum well light emitting diodes." Thesis, Cardiff University, 2004. http://orca.cf.ac.uk/55927/.

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By focussing on the properties of InGaN/GaN quantum well (QW) LEDs the key physical processes relevant to all InGaN/GaN light emitters are studied. These include the strength of the piezoelectric field, the important current pathways and the effect doping densities and anneal temperatures have on device performance. Photocurrent absorption spectra, of 35A Ino.1Gao.9N QW LEDs, were measured for a range of reverse bias. A bias of 8.5 V was necessary to counteract the affect of the internal piezoelectric field. Using this value and an appropriate approximation for the depletion width of a p-z'-n

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Wang, Xianghua, and 王向华. "Design and laser fabrication of GaN/sapphire light-emitting diodes." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45143079.

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Watson, Scott. "High speed systems using GaN visible LEDs and laser diodes." Thesis, University of Glasgow, 2016. http://theses.gla.ac.uk/7205/.

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Visible light communication is a developing technology making use of light-emitting diodes (LEDs) and laser diodes in the visible spectrum for communication purposes. This thesis looks at the use of gallium nitride (GaN) devices for high speed measurements in free space, through fibre and underwater. Micro-pixellated LEDs (micro-LEDs) have been used as a source for these measurements and the different ways to drive these devices is explored. LEDs are limited in how fast they can be driven and therefore laser diodes are also considered for these high speed measurements. The frequency responses

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Lui, Chun Hung. "Optical properties of InGaN/GaN multiple quantum well light emitting diodes /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202006%20LUI.

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Kölper, Christopher [Verfasser]. "Optoelectronic Properties of GaN Nanorods and Light Emitting Diodes / Christopher Kölper." München : Verlag Dr. Hut, 2013. http://d-nb.info/1031844554/34.

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Jobe, Sean Richard Keali'i. "OPTIMIZATION OF GAN LASER DIODES USING 1D AND 2D OPTICAL SIMULATIONS." DigitalCommons@CalPoly, 2009. https://digitalcommons.calpoly.edu/theses/74.

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This paper studies the optical properties of a GaN Laser Diode (LD). Through simulation, the GaN LD is optimized for the best optical confinement factor. It is found that there are optimal thicknesses of each layer in the diode that yield the highest optical confinement factor. There is a strong relationship between the optical confinement factor and lasing threshold—a higher optical confinement factor results in a lower lasing threshold. Increasing optical confinement improves lasing efficiency. Blue LDs are important to the future of lighting sources as they represent the final color in the

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Efthymiou, Loizos. "GaN-on-silicon HEMTs and Schottky diodes for high voltage applications." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/274912.

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Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices as its application in power systems would result in a significant increase in the power density, reduced power losses, and the potential to operate at high frequencies. The wide bandgap of the material allows a high critical electric field to be sustained which can lead to the design of devices with a shorter drift region, and therefore with lower on-state resistance, if compared to a silicon-based device with the same breakdown voltage. The use of an AlGaN/GaN heterostructure allows the formati

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Liang, Hu. "Fabrication and characteristics of the InGaN/GaN multiple quantum well blue LEDs /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20LIANG.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.<br>Includes bibliographical references (leaves 62-66). Also available in electronic version. Access restricted to campus users.

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Berthelot, Laurent. "Réalisation et caractérisation de composants luminescents à base de semiconducteurs organiques : Diodes à héterojonction PVK/Alq3 : Diodes hybrides GaN/Organique." Ecully, Ecole centrale de Lyon, 1999. http://www.theses.fr/1999ECDL0052.

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Ce travail de thèse porte sur l'étude de diodes électroluminescentes organiques (OLED). L'accent a été mis sur la compréhension des caractéristiques de transport ainsi que le contrôle de la couleur. Deux types de composants luminescents très différents ont été réalisés et étudiés : des OLED à hétérojonctions PVK/Alq3 et des diodes hybrides GaN/Organiques. Dans un premier temps, les différentes familles de matériaux ainsi que leurs principales caractéristiques sont présentées. Nous décrivons ensuite l'état de l'art et les limitations de ces structures organiques. La partie expérimentale décrit

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Weig, Thomas [Verfasser], and Ulrich T. [Akademischer Betreuer] Schwarz. "Generation of optical ultra–short pulses in (Al,In)GaN laser diodes." Freiburg : Universität, 2015. http://d-nb.info/111499636X/34.

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Hsu, Chou-Wei, and 許洲維. "P-type GaN Schottky Diodes Study." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/22036479481422562872.

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碩士<br>逢甲大學<br>電機工程所<br>92<br>In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from the x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS

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Liu, Yi-jung, and 劉亦浚. "Fabrication of GaN-Based Light Emitting Diodes." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/vz4uuw.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>96<br>In this thesis, two approaches are presented to improve future solid-state lighting devices: GaN-based LEDs. All these approached are all related to how to promote the luminous intensity of nitride-based LEDs. In respect of research on GaN-based LEDs, we have proposed oblique sidewalls and floating p-GaN with an air-buffer layer by using KOH wet-etching process to improve the light-extraction efficiency from device sidewalls and sample surface, respectively. The oblique sidewalls exist along specific directions, creating more escaped cones for output light

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Chu, Chung Ming, and 曲崇銘. "Electrical Measurements of Schottky Diodes on GaN." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/10899311797402766747.

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碩士<br>國立交通大學<br>電子物理學系<br>84<br>In this study, several measurement techniques were used to analyze the electric characteristics and traps in unintentionally doped n-type GaN grown by metal organic chemical vapor deposition.I-V measurements on Schottky diodes indicates the forward current appears due to thermionic field emission of electrons through the Schottky barrier, because there are high trap concentrations near the surface region. On the other hand, the electrons tunnel through

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Huang, Shyh-Jer, and 黃士哲. "Theoretical Studies of InGaN/GaN Laser Diodes." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/05698630068849835891.

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博士<br>國立交通大學<br>電子工程系所<br>96<br>In this dissertation, the InGaN/GaN laser diode is theoretically studied. We have optimized its active region and the cladding layer composed of a p-type AlGaN/GaN superlattice by studying the spillover effect, the influence of dopants, and the key factor making the vertical resistance of the p-type superlattice large. The effects of electron spillover from quantum wells on the optical property of InGaN/GaN laser diodes are theoretically studied in detail. Six-band model including strain effect is used to calculate valence band states. Continuous subbands are si

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Huang, Wen-Pin, and 黃文賓. "Fabrication of GaN High Voltage Schottky Diodes." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/45505821927574799620.

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碩士<br>國立中央大學<br>電機工程研究所<br>94<br>It is the goal that the global various countries have wanted to reach all the time to pursue the electric supply and demand of high quality, a large number of construction power plants do not solve the way of the problem, but should improve the efficiency of the electric equipment products. In this thesis, we studied on GaN Schottky diodes with mesa-type n-GaN and planar-type AlGaN/GaN, operating at high forward current and high breakdown voltage. In Mesa-type n-GaN Schottky diodes, having a drift region of 2.8�慆 thickness and doping concentration of 5×1016/cm3

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Huang, Yen-Chieh, and 黃彥傑. "GaN heterostructure Schottky Diodes on Silicon Substrates." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/30211069823184628503.

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Tu, Guan-Cheng, and 凃冠誠. "MgZnO/GaN Heterojunction Diodes for Optoelectronic Applications." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/gcruh9.

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碩士<br>逢甲大學<br>電子工程學系<br>106<br>In this thesis, the ultrasonic spray pyrolysis deposition which has benefits of low-cost and room-temperature operation is used to deposit n-type MgZnO on the p-type GaN to form pn heterojunction. Ti/Al and Ni/Au are deposited by the thermal evaporator to serve as the cathode and the anode of the diode. The present diode can be used as light-emitting diode and photodiode. In order to understand the properties of MgZnO thin films which is deposited by the ultrasonic spray pyrolysis deposition, the following material characterization techniques are used including:

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Lin, Wei-sheng, and 林偉聖. "InGaN-Based Alternating Current Light-Emitting Diodes with AlGaN/GaN Schottky Barrier Diodes." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/47581537444137671785.

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碩士<br>國立中央大學<br>電機工程研究所<br>99<br>In this study, we investigated the detailed mechanisms on fabricating InGaN-based Alternating Current Light-emitting diodes (AC-LEDs) with AlGaN/GaN Schottky Barrier Diodes (SBDs). We tried two methods for integrating vertical structures combined with SBDs and LEDs: (1) AlGaN/GaN SBD structure re-grown on InGaN/GaN LED structure, (2) InGaN/GaN LED structure re-grown on AlGaN/GaN SBD structure. Both of them had an accuracy problem of dry etching, so we developed a selective re-growth method to fabricate AC-LED incorporated with SBDs. In the SBD structure, we emp

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Lin, Jia-Hua, and 林佳樺. "Study on High-Voltage GaN Light Emitting Diodes." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/06498605992635878887.

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碩士<br>國立中興大學<br>精密工程學系所<br>99<br>P-GaN side up high-voltage GaN LEDs with high reflection on silicon substrate and both p-GaN and undoped-GaN roughening layers have been investigated. The devices are subsequently fabricated with wafer-bond, laser lift-off, chemical dry/wet etching and double-side roughening techniques to transfer epilayer to silicon substrate with mirror. The roughness on p-GaN surface was fabricated via low temperature growth, and rough surface of u-GaN was made by wet-etching. Then we connected 64 cells by 8×8 chips to get high-voltage LEDs. The forward voltage of LEDs w

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Lin, Ching-Liang, and 林京亮. "Light Enhancement of Thin-GaN Light Emitting Diodes." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/51951559488289706667.

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博士<br>國立中央大學<br>化學工程與材料工程研究所<br>96<br>GaN-based materials have leaped to a brand new stage in the past two decades. The single crystalline and direct band-gap GaN film can be grown on the sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The wavelength of the emitting light from GaN ranges from ultra-violate (UV) to blue light region by doping various indium content. Nowadays, the material of the blue light emitting diodes is based on the GaN material. Pumping phosphors or other wavelength converter by blue light, the white light can be generated. Hence, the GaN mater

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Pan, Ching-Ju, and 潘晴如. "Fabrication and Characterization of GaN Light Emitting Diodes." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/32099555409871547855.

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碩士<br>國立交通大學<br>電子物理系<br>89<br>In this study, we fabricated and characterized GaN light emitting diodes (LED) and Schottky diodes (SD). The structures for transmission line model (TLM) and circular transmission line model (CTLM) were prepared simultaneously to measure the sheet resistance of p-GaN epilayers and specific contact resistance of Ni-Au/p-GaN ohmic contacts. The luminescence spectra of LEDs are ranged from 450nm to 575nm, with peak wavelength at 500nm. As 20mA current flows, there exist about 3.3V voltage drop across LEDs. Various patterned LED structures give ideality fa

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Liu, Zhe-Yu, and 劉哲宇. "Study of GaN PIN Diodes on Sapphire Substrate." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/26457823768140537737.

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碩士<br>國立清華大學<br>電子工程研究所<br>102<br>Due to the dislocation that resulted from the lattice mismatch between GaN and sapphire substrate, patterned sapphire substrate (PSS) was widely used in MOCVD epitaxy to improve the crystalline quality instead of conventional sapphire substrate (CSS). We compared PIN devices fabricated on FSS with those on PSS to investigate how dislocation affects the devices characteristics, such as forward turn-on voltage, reverse leakage current and breakdown voltage. Following electrical measurement including current-voltage, capacitance-voltage, and deep-level transient

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Jin, Chong. "GaN Schottky diodes for signal generation and control." Phd thesis, 2015. https://tuprints.ulb.tu-darmstadt.de/5212/1/thesischong20150325_flattern.pdf.

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The aim of this work is to explore the potential of GaN Schottky diodes for high fre- quency signal generation and control, with emphasis on their power handling capability. GaN Schottky diodes are expected to provide superior power handling capability due to the wide band-gap of GaN. Theoretical analysis has been performed analytically and numerically. Devices have been fabricated and their performance has been evaluated experimentally. Demonstration of monolithic integrated circuits utilizing the realized devices was also made. The diode figure of merits e.g. Cj0, Rs , Vbr , have been con

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Tsou, Po-Hung, and 鄒博閎. "GaN Light-Emitting Diodes with direction nanoporous structure." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/z4478n.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>106<br>In this thesis, a gallium nitride light-emitting diode with a nano-porous structure is fabricated by epitaxy of Si-doped GaN which under the LED active layer. First, a scribe line with a depth of about 10 μm was fabricated in the non-luminous area by means of surface cutting in the technique of laser cutting,the epitaxial layer of Si-doped GaN which above sapphire is exposed on the side of the LED die,that is the electrochemical etching of the target area, etching of n+-GaN doping Si epitaxial layer by electrochemical etching process,the principle of this e

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LIN, JIAN-HONG, and 林建宏. "Improved Efficiency for InGaN/GaN Light-emitting Diodes Using P-GaN Photonic Crystal Structure." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/6tn68d.

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碩士<br>國立虎尾科技大學<br>光電工程系光電與材料科技碩士班<br>106<br>In this dissertation, Studying p-type gallium nitride is surface treated to form a photonic crystal structure to enhance the extraction efficiency of the blue light-emitting diode. Using Plasma Enhanced Chemical Vapor Deposition (PECVD) deposition of cerium oxide on P-type gallium nitride surface, growning Single-layer polystyrene microspheres by spin coating. Etching the cerium oxide layer using polystyrene microspheres as a mask layer using RIE,then etching p-type gallium nitride using ruthenium dioxide layer as mask by ICP. Among them, the spin c

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Lin, Wen-Yu, and 林文禹. "Fabrication of Metal-Substrate GaN-Based Light-Emitting Diodes." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/43839188095470317678.

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碩士<br>國立中興大學<br>材料工程學研究所<br>93<br>A vertical conducting GaN/mirror/Cu LED fabricated using the laser lift-off and electroplating techniques is demonstrated. The selective p-GaN top area was first electroplated by a thick copper film, and then a UV laser was employed to separate the GaN thin film from the sapphire substrate. The forward voltages (@ 20 mA) of the original GaN/sapphire and p-side-down GaN/mirror/Cu LED samples were 2.76 and 2.87 V, respectively. These results indicated that the series resistance of the GaN/mirror/Cu LEDs does not arise greatly with the present vertical conducting

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Lin, Shin-Wei, and 林仕尉. "Conductive transparent oxide applied to GaN Schottky barrier diodes." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/04735008512118252762.

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Shuo-YuanLiao and 廖碩源. "Application of ZnO in GaN-based light-emitting diodes." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/nz79bw.

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Lin, Pei-ying, and 林佩瑩. "Analysis of AlGaN/GaN High Breakdown Voltage Schottky Diodes." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/98253923560566605289.

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碩士<br>國立中央大學<br>電機工程研究所<br>98<br>In this study, AlGaN / GaN HEMT structures on the high-resistance AlN buffer layer and the conventional GaN buffer layer were grown, respectively. The planar Schottky diodes were then fabricated on these structures. From the I-V measurement, the results indicate the device with high-resistance AlN buffer layer not only substantially promote the breakdown voltage but also keep the low leakage current density. Therefore, in this study we discussed in detail about the factors of SBDs characteristics on different buffer layers, and further analyzed the mechanism of

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Chen, Ying-chien, and 陳英杰. "Fabrication and analysis of a novel GaN Schottky Diodes." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/93359234175393166653.

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碩士<br>國立中央大學<br>物理研究所<br>97<br>In this thesis a new AlGaN/GaN high electron mobility transistor basedrectifier, i.e. P-field effect Schottky barrier diode (P-FESBD), is proposed andfabricated. It consists of a p-n diode and a Schottky diode connected in parallel.With the additional p-type GaN gate, the rectifier is expected to operate in the normally-off mode with low reverse leakage current and low on-resistance. The turn-on voltage, on-state resistance and breakdown voltage of the one finger rectifier with 500×35 μm2 gate area is 0.5 V, 24 mΩ-cm2 and 22 V, respectively. According to secondar

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Huang, Chao-Shun, and 黃炤舜. "Plasma-Etching Characteristics of GaN-Based Light Emitting Diodes." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/84163827912537590519.

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碩士<br>國立中興大學<br>精密工程學系所<br>94<br>GaN-related alloy semiconductors with wide band gap ranging from 3.4 to 6.2 eV at room temperature are the focus of current research for UV or blue emitters and detectors. During the conventional device processing, the wet chemical etching frequently suffers from undercut issue and is gradually replaced by plasma etching. In this thesis, we investigate the plasma-etching characteristics of GaN-based light emitting diodes using an inductively coupled plasma (ICP) etcher. The etch characteristics were investigated by varying the etching parameters, such as ICP po

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Lu, Yi-An, and 盧怡安. "Study on GaN Light Emitting Diodes with Imbeded Electrodes." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/27893743342506275485.

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碩士<br>國立中興大學<br>精密工程學系所<br>98<br>Textured n-GaN side up LED with interdigitated imbedded electrodes (IIE) eliminating the electrode-shading loss with high reflection mirror on silicon substrate and double-side roughening both p-GaN and undoped-GaN layers have been investigated. The devices are subsequently fabricated with wafer-bond, laser lift-off and chemical dry/wet etching techniques. The roughness on p-GaN surface was fabricated via low temperature growth, and that on n-GaN surface was made by wet-etching. This n-GaN side up structure was useful to avoid light-absorbing and enhance the li

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Lu, Chih-Feng, and 呂志鋒. "Emission Efficiency Improvement of GaN-based Light-emitting Diodes." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/63507784391404310165.

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博士<br>臺灣大學<br>光電工程學研究所<br>98<br>In this dissertation, we have demonstrated the dependencies of output spectral overall red shift and spectral blue shift in increasing injection current on the prestrained barrier thickness in an InGaN/GaN QW LED of prestrained growth. It was found that a thinner prestrained barrier led to a larger general spectral red shift and a smaller blue shift in increasing injection current because of the stronger prestrain effect. Also, it was found that in terms of device resistance and saturation current, the LED performances of prestrained samples were better than tha

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王偉儒. "Study of Characteristics of High-Power GaN PIN Diodes." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/24947617318478482805.

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Zih-FongWang and 王子峯. "Fabrication of GaN/InGaN Based Light-Emitting Diodes (LEDs)." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/wn4cv3.

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HSU, YUEH, and 徐岳. "Modeling the diode equation with quantum wells for vertical-injection GaN-based light emitting diodes." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/49633188571021859770.

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Lee, Geng-Yen, and 李庚諺. "Growth, Fabrication and Characterization of AlGaN/GaN Schottky Diodes and AlInN/GaN Field-Effect Transistors." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/43165176168569087482.

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博士<br>國立中央大學<br>電機工程學系<br>104<br>In this dissertation, the growth mechanisms and device characteristics of AlGaN/GaN-based Schottky barrier diodes (SBDs) with a high breakdown voltage and the AlInN-based high electron mobility transistors (HEMTs) with a high current density have been studied. For the high-voltage GaN SBDs, devices are fabricated on a composite AlGaN/AlN buffer layer with different threading dislocation (TD) densities. The correlation between TDs and the device characteristics could be well linked. The SBDs with an anode-to-cathode distance (LAC) of 30 μm exhibit a low on-state

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Chen, Tron-min, and 陳聰敏. "The Investigations of High Efficiency Vertical Structured GaN-based Schottky Barrier Diodes and Light Emitting Diodes." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/42847536340999956033.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>95<br>In this dissertation, vertical structure GaN-based Schottky barrier diodes (SBDs) and light emitting diodes (LEDs) were investigated. Vertical-conducting GaN-based SBDs and LEDs were designed, fabricated and characterized, by means of Ni-electroplating substrate transformation in conjunction with laser lift-off technique. A real-time data acquisition (DAQ) technique was also developed for precisely characterizing the junction temperature, light output power, and thermal resistance of light emitting diodes (LEDs). To further promote both contact and current

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Lin, Chuang-sheng, and 林壯聲. "Array of GaN Based Transverse-Junction Blue Light Emitting Diodes." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/n5rewb.

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碩士<br>國立中央大學<br>電機工程研究所<br>96<br>We demonstrate the array of GaN-based blue-light light-emitting diode (LED), which is composed of GaN-based blue wavelength multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the re-growth of n-type GaN layers on the sidewall of p-type GaN and MQWS. The non-uniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs. In output power measurements, the transverse junction light-emit

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Yi-JungLiu and 劉亦浚. "Investigation of GaN-Based Light-Emitting Diodes with Improved Performance." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/72c4c9.

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Wang, Cheng-Yin, and 王振印. "Fabrication and Analysis of GaN-based Nanorod Light Emitting Diodes." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/40773024305916468594.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>96<br>Since p-type GaN is well developed in 1990''s, GaN has been widely useded in short wavelength light emitting diodes. Light emitting diodes have advantages such as low power consumption, long life time, good reliability, short response time. Nevertheless, there are still some spaces to improve it like quantum efficiency, peak wavelength shift. A practical approach to fabricate textured GaN-based light emitting diodes (LEDs) by nanosphere lithography is presented. Due to the refraction index difference between GaN and air, there will be a total reflection at th

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Yu-ChihChang and 張宇志. "Fabrication of GaN-Based Light Emitting Diodes with Nanosphere Structures." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/49030196378861344271.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>101<br>In order to improve light extraction efficiency (LEE) and internal quantum efficiency (IQE) of GaN-based light-emitting diodes (LEDs), the self-assembled SiO2 nanosphere monolayer structure is introduced and studied. Three new nanosphere monolayer-related approaches are proposed in this thesis. The optical and electrical properties as well as related material analyses were also studied and discussed. An interesting approach to improve light extraction efficiency of high power GaN-based LEDs by the use of a three dimensional-photonic crystal (3D-PhC) b

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Chang, Chun-Chieh, and 張鈞傑. "Investigation of GaN-based Light-Emitting Diodes with AlN Film." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/27295777091457059486.

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碩士<br>國立交通大學<br>光電系統研究所<br>100<br>In this study, we examined the characteristics for the application of AIN thin films on GaN light-emitting diode (LED) devices. The devices structure contained a current blocking layer (CBL) and a passivation layer. We also compared the differences in optical and electrical properties between this devices structure and devices that traditionally employing silicon dioxide thin films. We used the sputtering system to grow thin films. Transmittance measurements indicated that the AIN thin film had a transmittance of above 90% in the visible light region. Addi

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