Relevant bibliographies by topics / GaN Epilayers

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'GaN Epilayers'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "GaN Epilayers"

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Hess, S., R. A. Taylor, J. F. Ryan, B. Beaumont, and P. Gibart. "Optical gain in GaN epilayers." Applied Physics Letters 73, no. 2 (July 13, 1998): 199–201. http://dx.doi.org/10.1063/1.121754.

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KANG JUN-YONG, HUANG QI-SHENG, and T.OGAWA. "DEFECTS IN GaN EPILAYERS." Acta Physica Sinica 48, no. 7 (1999): 1372. http://dx.doi.org/10.7498/aps.48.1372.

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Caban, Piotr, Kinga Kościewicz, Wlodek Strupiński, Jan Szmidt, Karolina Pagowska, Renata Ratajczak, Marek Wojcik, Jaroslaw Gaca, and Andrzej Turos. "Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut." Materials Science Forum 615-617 (March 2009): 939–42. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.939.

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The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase epitaxy was studied. Substrate etching has an impact on the crystallographic structure of epilayers and improves its crystal quality. The GaN layers were characterized by RBS/channelling and HRXRD measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the crystal quality of epilayer.
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Trager-Cowan, C., S. McArthur, P. G. Middleton, K. P. O’Donnell, D. Zubia, and S. D. Hersee. "GaN epilayers on misoriented substrates." Materials Science and Engineering: B 59, no. 1-3 (May 1999): 235–38. http://dx.doi.org/10.1016/s0921-5107(98)00373-0.

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Gil, Bernard, Pierre Lefebvre, and Hadis Morkoç. "Strain effects in GaN epilayers." Comptes Rendus de l'Académie des Sciences - Series IV - Physics 1, no. 1 (March 2000): 51–60. http://dx.doi.org/10.1016/s1296-2147(00)00101-3.

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Wang, Cheng Ming, Donat J. As, D. Schikora, B. Schöttker, and K. Lischka. "Cathodoluminescence of Cubic GaN Epilayers." Materials Science Forum 264-268 (February 1998): 1339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1339.

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Wang, Yong, Nai Sen Yu, Ming Li, and Kei May Lau. "Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD." Advanced Materials Research 442 (January 2012): 16–20. http://dx.doi.org/10.4028/www.scientific.net/amr.442.16.

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The continuous 1.0 µm GaN epilayers with and without partially Mg-doped were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The DC current-voltage (I-V), time-of-flying secondary ion mass spectrometer (ToF-SIMS) and atomic force microscope (AFM) measurements were employed for comparison to characterize surface morphology and resistivity of GaN buffer layer with and without partially Mg-doped. The sample of 1.0 µm GaN epilayer with partially Mg-doped shows much higher resistivity than sample without Mg-doped, which indicates the partially Mg doping in 1.0 µm GaN epilayer can effectively increase the resistivity of GaN grown on Si (111) substrates. As a result, the high resistivity GaN buffer layer with good surface morphology is achieved in the partially Mg-doped GaN buffer layer.
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Huang, Shih-Yung, Jian-Cheng Lin, and Sin-Liang Ou. "Study of GaN-Based Thermal Decomposition in Hydrogen Atmospheres for Substrate-Reclamation Processing." Materials 11, no. 11 (October 24, 2018): 2082. http://dx.doi.org/10.3390/ma11112082.

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This study investigates the thermal decomposition behavior of GaN-based epilayers on patterned sapphire substrates (GaN-epi/PSSs) in a quartz furnace tube under a hydrogen atmosphere. The GaN-epi/PSS was decomposed under different hydrogen flow rates at 1200 °C, confirming that the hydrogen flow rate influences the decomposition reaction of the GaN-based epilayer. The GaN was completely removed and the thermal decomposition process yielded gallium oxyhydroxide (GaO2H) nanostructures. When observed by transmission electron microscopy (TEM), the GaO2H nanostructures appeared as aggregates of many nanograins sized 2–5 nm. The orientation relationship, microstructure, and formation mechanism of the GaO2H nanostructures were also investigated.
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Ho, V. X., Y. Wang, B. Ryan, L. Patrick, H. X. Jiang, J. Y. Lin, and N. Q. Vinh. "Observation of optical gain in Er-Doped GaN epilayers." Journal of Luminescence 221 (May 2020): 117090. http://dx.doi.org/10.1016/j.jlumin.2020.117090.

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Mei, Jun Ping, Xin Jian Xie, Qiu Yan Hao, Xin Liu, Jin Jin Xu, and Cai Chi Liu. "Effect of Heat Treatment on Structural and Optoelectronic Properties of GaN Epilayers." Materials Science Forum 663-665 (November 2010): 1314–17. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.1314.

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GaN epilayers were grown on sapphire by metal-organic chemical vapor deposition (MOCVD), and the samples were annealed with rapid thermal processor (RTP) at 650, 750, 850 and 950oC, respectively. The effect of heat treatment on structural and optoelectronic properties of GaN epilayers was investigated. X-ray diffraction (XRD) analysis shows that the full width at half maximum (FWHM) of the rocking curves becomes smaller as the annealing temperature increases. Photoluminescence (PL) spectra at room temperature demonstrate that the yellow band decreases with the increase of annealing temperature. Hall-effect measurements reveal that carrier concentration of the GaN epilayers raise with the increase of annealing temperature. The results suggest that the structural and optoelectronic properties of GaN epilayers could be significantly improved by heat treatment.
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Dissertations / Theses on the topic "GaN Epilayers"

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Mirjalili, Ghazanfar. "Far infrared characterisation of GaN epilayers." Thesis, University of Essex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.339240.

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Wang, Yingjuan. "Comprehensive optical spectroscopic investigations of GaN epilayers and InGaN/GaN quantum structures." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37090343.

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Wang, Hongjiang, and 王泓江. "Spectroscopic investigation of optical properties of GaN epilayers andInGaN/GaN quantum wells." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29779911.

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Wang, Yingjuan, and 王穎娟. "Comprehensive optical spectroscopic investigations of GaN epilayers and InGaN/GaN quantum structures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37090343.

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Junaid, Muhammad. "Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-84655.

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In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. For the growth of epitaxial GaN films two types of sputtering techniques, direct current (DC) magnetron sputtering and high power impulse magnetron sputtering (HiPIMS) were studied. The GaN epitaxial films grown by DC-MSE directly on to Al2O3(0001) in a mixture of Ar and N2, feature low threading dislocation densities on the order of ≤ 1010 cm-2, as determined by transmission electron microscopy (TEM) and modified Williamson-Hall plots. X-ray rocking curves reveal a narrow full-width at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence (PL) peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. GaN(0001) epitaxial films grown on Al2O3 substrates by HiPIMS deposition in a mixed N2/Ar discharge contain both strained domains and almost relaxed domains in the same epilayers, which was determined by a combination of x-ray diffraction (XRD), TEM, atomic force microscopy (AFM), μ-Raman microscopy, μ-PL, and Cathodoluminescence (CL). The almost fully relaxed domains show superior structural and optical properties evidenced by a rocking curves with full width at half maximum of 885 arc sec and a low temperature band edge luminescence at 3.47 eV with the FWHM of 10 meV. The other domain exhibits a 14 times higher isotropic strain component, which is due to higher densities of point and extended defects, resulting from  bombardment of energetic species during growth. Single-crystal GaN(0001) nanorods have been grown directly on Si(111) substrates by DC-MSE in a pure N2environment. The as-grown GaN nanorods exhibit very high crystal quality from bottom to the top without any stacking faults, as determined by TEM. The crystal quality is found to increase with increasing working pressure. XRD results show that all the rods are highly 0001 oriented. All nanorods exhibit an N-polarity, as determined by convergent beam electron diffraction methods. Sharp and well-resolved 4 K μ-PL peaks at ~3.474 eV with a FWHM ranging from 1.7 meV to 22 meV are attributed to the intrinsic GaN band edge emission and corroborate the exceptional crystal quality of the material. Texture measurements reveal that the rods have random in-plane orientation when grown on Si(111) with its native oxide while they have an inplane epitaxial relationship of GaN[11̅20] // Si[1̅10] when grown on Si(111) without the surface oxide. The best structural and optical properties of the rods were achieved at N2 partial pressures of 15 to 20 mTorr. By diluting the reactive N2 working gas in DC-MSE with Ar, it is possible to achieve favorable growth conditions for high quality GaN nanorods onto Si(111) at a low total pressure of 5 mTorr. With an addition of small amount of Ar (0.5 mTorr), we observe an increase in nanorod aspect ratio from 8 to ~35, a decrease in average diameter from 74 nm to 35 nm, and a 2-fold increase in nanorod density compared to pure N2 conditions. By further dilution, the aspect ratio continuously decreases to 14 while the diameter increases to 60 nm and the nanorod density increases to a maximum of 2.4×109 cm-1. The changes in nanorod morphology upon Ar-dilution of the N2 working gas are explained by a transition from N-rich growth conditions, promoting the diffusion induced nanorods growth mode, to Ga-rich growth conditions, in qualitative agreement with GaN nanorods growth by MBE. At N2 partial pressure of 2.5 mTorr, the Ga-target is close to a non-poisoned state which gives the most perfect crystal quality which is reflected in an exceptionally narrow band edge emission at 3.479 eV with a FWHM of only 1.7 meV. Such structural and optical properties are comparable to rods previously grown at 3 to 4 time higher total working pressures of pure N2.
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Zhang, Fan, and 張帆. "Photoluminescence and reflectance spectra of Si-doped GaN epilayers." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278565.

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Zhang, Fan. "Photoluminescence and reflectance spectra of Si-doped GaN epilayers." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278565.

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Bulbul, Mahir Mehmet. "Raman spectroscopy of GaN epilayers and InGaAlAs quaternary semiconductor alloys." Thesis, University of Essex, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242232.

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Hao, Rui. "Structural and optical characterisations of defects in non-polar and semi-polar GaN epilayers and InGaN/GaN MQWs." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610548.

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Kendrick, Chito Edsel. "Revisiting Nitride Semiconductors: Epilayers, p-Type Doping and Nanowires." Thesis, University of Canterbury. Electrical and Computer Engineering, 2008. http://hdl.handle.net/10092/2108.

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This dissertation investigates the growth of high quality GaN and InN thin films by plasma assisted molecular beam epitaxy (PAMBE). It also explores the growth of self-seeded GaN branching nanowires and p-type doping of InN, two topics of particular interest at present. The growth of high quality III-Nitride semiconductor thin films have been shown to be dependent on the group-III (metal) to nitrogen ratio. A metal-rich growth environment enhances the diffusion of the group-III adatoms through the formation of a group-III adlayer. By using a metal-rich growth environment, determined by growth rate studies using laser reflection interferometry or RHEED analysis of the surface, both GaN and InN films have been grown with a smooth surface morphology. Additionally the smooth surface morphology has beneficial effects on the electrical and optical properties of both materials. However, with the growth using a metal-rich environment, group-III droplets are present on all film surfaces, which can be an issue for device fabrication, as they produce facets in the crystal structure due to enhanced growth rates. MBE growth of GaN nanowires via the vapour liquid solid (VLS) and vapour solid (VS) growth techniques have so far been based on the N-rich growth regime. However, we have shown that the Ga-rich growth regime can be used to grow self-seeded one dimensional and hierarchical GaN nanowires. 7 µm long hierarchical GaN nanowires with at least three branches were grown and shown to have a high crystalline quality. The suggested growth mechanism is a self-seeding VLS process driven by liquid phase epitaxy at the nanoscale, while the branching growth was nucleated due to the Ga-rich growth regime by excess Ga droplets forming on the trunk during growth. The growth of vertical GaN nanowires has also been achieved using the same self-seeding process and the critical parameter seems to be the Ga to N ratio. Also, the growth rate of the Ga-rich grown GaN nanowires can supersede the growth rates reported from N-rich grown GaN nanowires by at least a factor of two. The fabrication of vertical and planar GaN nanowire devices has been demonstrated in this study. Two point and three point contacts were fabricated to the branching GaN nanowires in the planar direction with resistive measurements ranging from 200 - 900 kΩ, similar to chemical vapour deposition and MBE grown GaN nanowires. The nonlinear current-voltage characteristics from the three point contacts may lead to unique nano-devices. The planar nanowires have also shown to have potential as UV detectors. Schottky diodes were fabricated on the vertical nanowires, with values for the barrier heights consistent with bulk diodes. Mg and Zn doping studies of InN were also performed. Both InN:Mg and InN:Zn have strong photoluminescence only at low doping concentrations. However, the InN:Mg films have reduced mobilities with increased Mg content, whereas the mobility determined from the InN:Zn films is independent of Zn. When the InN:Zn film quality was improved by growing under the In-rich growth regime, electrochemical capacitance-voltage results suggest n{type conductivity, and strong photoluminescence was obtained from all of the films with four features seen at 0.719 eV, 0.668 eV, 0.602 eV and 0.547 eV. The features at 0.719 eV and 0.668 eV are possibly due to a near band edge to valence band or shallow acceptor transition, while the 0.547 eV has an activation energy of 60 meV suggesting a deep level acceptor.
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Book chapters on the topic "GaN Epilayers"

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Gurskii, A. L., E. V. Lutsenko, V. Z. Zubialevich, V. N. Pavlovskii, G. P. Yablonskii, K. Kazlauskas, G. Tamulaitis, et al. "Stimulated Emission and Gain in GaN Epilayers Grown on Si." In UV Solid-State Light Emitters and Detectors, 199–206. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_14.

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Song, Jae Chul, D. H. Kang, Byung Young Shim, Eun A. Ko, Dong Wook Kim, Kannappan Santhakumar, and Cheul Ro Lee. "Characteristics Comparison between GaN Epilayers Grown on Patterned and Unpatterned Sapphire Substrate (0001)." In Advanced Materials and Processing IV, 355–58. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-466-9.355.

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Lundin, W. V., A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, A. I. Besulkin, A. V. Fomin, and D. S. Sizov. "MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range." In UV Solid-State Light Emitters and Detectors, 223–31. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_17.

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Khafagy, Khaled H., Tarek M. Hatem, and Salah M. Bedair. "Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates." In TMS 2020 149th Annual Meeting & Exhibition Supplemental Proceedings, 2057–64. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-36296-6_188.

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Gunshor, R. L., L. A. Kolodziejski, M. R. Melloch, N. Otsuka, and A. V. Nurmikko. "II-VI/III-V Heterointerfaces: Epilayer-On-Epilayer Structures." In Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors, 229–38. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5661-5_22.

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Pandey, Akhilesh, R. Raman, S. P. Chaudhaury, Davinder Kaur, and Ashok K. Kapoor. "Oxygen Ion Implantation Induced Effects in GaN Epilayer." In Springer Proceedings in Physics, 301–5. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_46.

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Nguyen, Xuan Sang, and Soo Jin Chua. "Deep Level Traps in GaN Epilayer and LED." In Handbook of Solid-State Lighting and LEDs, 161–84. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in optics and optoelectronics ; 25: CRC Press, 2017. http://dx.doi.org/10.1201/9781315151595-10.

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Wu, G. M., C. F. Tsai, C. F. Shih, N. C. Chen, and W. H. Feng. "GaN/Si(111) Epilayer Based on Low Temperature Al/N and AlGaN/GaN Superlattice for Light Emitting Diodes." In Solid State Phenomena, 587–90. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.587.

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Kang, Junyong, Xianglin Lin, and Tomoya Ogawa. "Observation of defects in GaN epilayers." In Defect Recognition and Image Processing in Semiconductors 1997, 347–50. Routledge, 2017. http://dx.doi.org/10.1201/9781315140810-70.

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Murray, R. T., P. J. Parbrook, D. A. Wood, and G. Hill. "Cracks in AlGaN epilayers on GaN buffers." In Microscopy of Semiconducting Materials 2001, 289–92. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-61.

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Conference papers on the topic "GaN Epilayers"

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Renucci, Marion, F. Demangeot, and J. Frandon. "Micro-Raman characterization of GaN epilayers." In International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, edited by Sergey V. Svechnikov and Mikhail Y. Valakh. SPIE, 1998. http://dx.doi.org/10.1117/12.306235.

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Mirjalili, G., Terence J. Parker, Tin S. Cheng, C. Thomas Foxon, and John W. Orton. "Far-infrared characterization of GaN epilayers." In Advanced Optical Materials and Devices, edited by Steponas P. Asmontas and Jonas Gradauskas. SPIE, 2001. http://dx.doi.org/10.1117/12.417585.

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Soh, Chew B., Dong Z. Chi, Hui F. Lim, and Soo-Jin Chua. "Identification of deep levels in π-GaN epilayers." In International Symposium on Photonics and Applications, edited by Marek Osinski, Soo-Jin Chua, and Akira Ishibashi. SPIE, 2001. http://dx.doi.org/10.1117/12.446547.

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Liu, K. T., Y. K. Su, S. J. Chang, and Y. Horikoshi. "Phosphorus Implantation Effects in Mg Doped GaN Epilayers." In 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.e-9-4.

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Reitz, Larry F. "High responsivity UV photoconductors based on GaN epilayers." In San Diego '92, edited by Robert E. Huffman. SPIE, 1993. http://dx.doi.org/10.1117/12.140863.

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Shalygin, V. A., L. E. Vorobjev, D. A. Firsov, V. Yu Panevin, A. N. Sofronov, G. A. Melentyev, A. V. Antonov, et al. "Terahertz emission from GaN epilayers at lateral electric field." In 2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010). IEEE, 2010. http://dx.doi.org/10.1109/icimw.2010.5612519.

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Jursenas, Saulius, G. Kurilcik, N. Kurilcik, Gintautas Tamulaitis, K. Kazlauskas, Arturas Zukauskas, P. Prystawko, et al. "Luminescence of nonthermalized electron-hole plasma in GaN epilayers." In Advanced Optical Materials and Devices, edited by Steponas P. Asmontas and Jonas Gradauskas. SPIE, 2001. http://dx.doi.org/10.1117/12.417587.

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Kang, Junyong. "Core structures of the edge dislocations in GaN epilayers." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408410.

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Zhu, S., K. Ito, K. Tomita, T. Narita, T. Kachi, and M. Kato. "Observation of Slow Carrier Recombination in p-type GaN Epilayers on GaN Substrates." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.ps-4-22.

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Bidnyk, Sergiy, Jack B. Lam, Brian D. Little, Gordon H. Gainer, Yong H. Kwon, Jin-Joo Song, Gary E. Bulman, and Hua-Shuang Kong. "Comparative study of near-threshold gain mechanisms in GaN epilayers and GaN/AlGaN separate confinement heterostructures." In Symposium on Integrated Optoelectronics, edited by Luke J. Mawst and Ramon U. Martinelli. SPIE, 2000. http://dx.doi.org/10.1117/12.382095.

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