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Journal articles on the topic 'GaN Epilayers'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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1

Hess, S., R. A. Taylor, J. F. Ryan, B. Beaumont, and P. Gibart. "Optical gain in GaN epilayers." Applied Physics Letters 73, no. 2 (July 13, 1998): 199–201. http://dx.doi.org/10.1063/1.121754.

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2

KANG JUN-YONG, HUANG QI-SHENG, and T.OGAWA. "DEFECTS IN GaN EPILAYERS." Acta Physica Sinica 48, no. 7 (1999): 1372. http://dx.doi.org/10.7498/aps.48.1372.

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3

Caban, Piotr, Kinga Kościewicz, Wlodek Strupiński, Jan Szmidt, Karolina Pagowska, Renata Ratajczak, Marek Wojcik, Jaroslaw Gaca, and Andrzej Turos. "Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut." Materials Science Forum 615-617 (March 2009): 939–42. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.939.

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The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase epitaxy was studied. Substrate etching has an impact on the crystallographic structure of epilayers and improves its crystal quality. The GaN layers were characterized by RBS/channelling and HRXRD measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the crystal quality of epilayer.
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4

Trager-Cowan, C., S. McArthur, P. G. Middleton, K. P. O’Donnell, D. Zubia, and S. D. Hersee. "GaN epilayers on misoriented substrates." Materials Science and Engineering: B 59, no. 1-3 (May 1999): 235–38. http://dx.doi.org/10.1016/s0921-5107(98)00373-0.

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5

Gil, Bernard, Pierre Lefebvre, and Hadis Morkoç. "Strain effects in GaN epilayers." Comptes Rendus de l'Académie des Sciences - Series IV - Physics 1, no. 1 (March 2000): 51–60. http://dx.doi.org/10.1016/s1296-2147(00)00101-3.

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6

Wang, Cheng Ming, Donat J. As, D. Schikora, B. Schöttker, and K. Lischka. "Cathodoluminescence of Cubic GaN Epilayers." Materials Science Forum 264-268 (February 1998): 1339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1339.

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7

Wang, Yong, Nai Sen Yu, Ming Li, and Kei May Lau. "Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD." Advanced Materials Research 442 (January 2012): 16–20. http://dx.doi.org/10.4028/www.scientific.net/amr.442.16.

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The continuous 1.0 µm GaN epilayers with and without partially Mg-doped were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The DC current-voltage (I-V), time-of-flying secondary ion mass spectrometer (ToF-SIMS) and atomic force microscope (AFM) measurements were employed for comparison to characterize surface morphology and resistivity of GaN buffer layer with and without partially Mg-doped. The sample of 1.0 µm GaN epilayer with partially Mg-doped shows much higher resistivity than sample without Mg-doped, which indicates the partially Mg doping in 1.0 µm GaN epilayer can effectively increase the resistivity of GaN grown on Si (111) substrates. As a result, the high resistivity GaN buffer layer with good surface morphology is achieved in the partially Mg-doped GaN buffer layer.
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8

Huang, Shih-Yung, Jian-Cheng Lin, and Sin-Liang Ou. "Study of GaN-Based Thermal Decomposition in Hydrogen Atmospheres for Substrate-Reclamation Processing." Materials 11, no. 11 (October 24, 2018): 2082. http://dx.doi.org/10.3390/ma11112082.

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This study investigates the thermal decomposition behavior of GaN-based epilayers on patterned sapphire substrates (GaN-epi/PSSs) in a quartz furnace tube under a hydrogen atmosphere. The GaN-epi/PSS was decomposed under different hydrogen flow rates at 1200 °C, confirming that the hydrogen flow rate influences the decomposition reaction of the GaN-based epilayer. The GaN was completely removed and the thermal decomposition process yielded gallium oxyhydroxide (GaO2H) nanostructures. When observed by transmission electron microscopy (TEM), the GaO2H nanostructures appeared as aggregates of many nanograins sized 2–5 nm. The orientation relationship, microstructure, and formation mechanism of the GaO2H nanostructures were also investigated.
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9

Ho, V. X., Y. Wang, B. Ryan, L. Patrick, H. X. Jiang, J. Y. Lin, and N. Q. Vinh. "Observation of optical gain in Er-Doped GaN epilayers." Journal of Luminescence 221 (May 2020): 117090. http://dx.doi.org/10.1016/j.jlumin.2020.117090.

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10

Mei, Jun Ping, Xin Jian Xie, Qiu Yan Hao, Xin Liu, Jin Jin Xu, and Cai Chi Liu. "Effect of Heat Treatment on Structural and Optoelectronic Properties of GaN Epilayers." Materials Science Forum 663-665 (November 2010): 1314–17. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.1314.

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GaN epilayers were grown on sapphire by metal-organic chemical vapor deposition (MOCVD), and the samples were annealed with rapid thermal processor (RTP) at 650, 750, 850 and 950oC, respectively. The effect of heat treatment on structural and optoelectronic properties of GaN epilayers was investigated. X-ray diffraction (XRD) analysis shows that the full width at half maximum (FWHM) of the rocking curves becomes smaller as the annealing temperature increases. Photoluminescence (PL) spectra at room temperature demonstrate that the yellow band decreases with the increase of annealing temperature. Hall-effect measurements reveal that carrier concentration of the GaN epilayers raise with the increase of annealing temperature. The results suggest that the structural and optoelectronic properties of GaN epilayers could be significantly improved by heat treatment.
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11

Bradby, J. E., S. O. Kucheyev, J. S. Williams, J. Wong-Leung, M. V. Swain, P. Munroe, G. Li, and M. R. Phillips. "Indentation-induced damage in GaN epilayers." Applied Physics Letters 80, no. 3 (January 21, 2002): 383–85. http://dx.doi.org/10.1063/1.1436280.

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12

Alves, E., J. G. Marques, M. F. Da Silva, J. C. Soares, J. Bartels, and R. Vianden. "Heavy ion implantation in GaN epilayers." Radiation Effects and Defects in Solids 156, no. 1-4 (December 2001): 267–72. http://dx.doi.org/10.1080/10420150108216904.

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13

Church, S. A., S. Hammersley, P. W. Mitchell, M. J. Kappers, S. L. Sahonta, M. Frentrup, D. Nilsson, et al. "Photoluminescence studies of cubic GaN epilayers." physica status solidi (b) 254, no. 8 (February 21, 2017): 1600733. http://dx.doi.org/10.1002/pssb.201600733.

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14

Song, Jae Chul, D. H. Kang, Byung Young Shim, Eun A. Ko, Dong Wook Kim, Kannappan Santhakumar, and Cheul Ro Lee. "Characteristics Comparison between GaN Epilayers Grown on Patterned and Unpatterned Sapphire Substrate (0001)." Advanced Materials Research 29-30 (November 2007): 355–58. http://dx.doi.org/10.4028/www.scientific.net/amr.29-30.355.

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GaN epilayers were grown on lens shaped patterned sapphire substrate (PSS) (0001) and unpatterned sapphire substrate (UPSS) (0001) by metal-organic chemical vapor deposition (MOCVD). The quality of the grown GaN epilayers on the PSS and UPSS were compared. Structural characteristics, surface morphology and optical properties of the GaN epilayers were investigated using double crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and photoluminescence (PL). A lens shaped pattern was formed on the sapphire substrate to reduce threading dislocation (TD) density and also to improve the optical emission efficiency by internal reflection on the lens. Scanning electron microscopy images show the growth of GaN epilayers at various times. Full coalescence is observed at a growth time of 80 min. It is seen from the DCXRD rocking spectrum that full width at half maximum (FWHM) of the GaN grown on PSS was 438.7 arcsec which is less than UPSS value. The lower value of FWHM indicates that the crystalline quality of the GaN epilayers grown on PSS is improved compared to GaN grown on UPSS. It is clearly seen from the AFM images that the dislocation density is less for the GaN grown on PSS. A strong and sharp photoluminescence (PL) band edge emission was observed for the GaN grown on PSS compared to UPSS. Defect related yellow luminescence was observed for GaN grown on UPSS which did not appear for PSS. The FWHM at the 364.3 nm peak position was evaluated to be 50.7 meV from the PL spectra for GaN grown on PSS. The above result indicates GaN epilayers can be grown on PSS with low TD density and will be useful for optical emission.
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15

Jun, Yong-Ki, and Sang-Jo Chung. "Optical properties of InxGa1-xN/GaN epilayers." Korean Journal of Materials Research 12, no. 1 (January 1, 2002): 54–57. http://dx.doi.org/10.3740/mrsk.2002.12.1.054.

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16

Lisker, M., A. Krtschil, H. Witte, J. Christen, D. J. AS, B. Schöttker, and K. Lischka. "Electrical and Photoelectrical Characterization of Deep Defects In Cubic GaN on GaAs." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 185–90. http://dx.doi.org/10.1557/s109257830000243x.

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Nominally undoped cubic GaN epilayers deposited by rf-plasma assisted molecular beam epitaxy on semi-insulating GaAs substrates were investigated by electric and photoelectric spectroscopical methods. As a consequence of the existence of deep levels in the GaAs-substrate itself, special care has to be taken to separate the contributions of the substrate from that of the cubic GaN epilayer in the various spectra. Two different contact configurations (coplanar and sandwich structures) were successfully used to perform this separation. In the cubic GaN epilayer a trap with a thermal activation energy of (85±20)meV was found by thermal admittance spectroscopy and thermal stimulated currents. Optical admittance spectroscopy and photocurrent measurements furthermore revealed defects at EG-(0.04-0.13) eV, EG-(0.21-0.82) eV and two additional deeper defects at 1.91 Ev and 2.1 eV, respectively. These defect related transitions are very similar to those observed in hexagonal GaN.
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17

Sobolev, N. A., A. M. Emel’yanov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. I. Besyul`kin, W. V. Lundin, N. M. Shmidt, A. S. Usikov, and E. E. Zavarin. "Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers." Physica B: Condensed Matter 340-342 (December 2003): 1108–12. http://dx.doi.org/10.1016/j.physb.2003.09.177.

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18

Fang, Yu Long, Jia Yun Yin, and Zhi Hong Feng. "Influence of the Strain of AlN Buffer Layer on the Strain Evolution of GaN Epilayer Grown on 3-in 6H-SiC Substrate." Advanced Materials Research 335-336 (September 2011): 1242–45. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.1242.

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The influence of the strain of AlN buffer layers on the strain evolution of GaN epilayers grown on 3-in 6H-SiC substrates by metal-organic chemical vapor deposition was investigated by double-crystal X-ray diffractometry, and Raman scattering spectra. It was found that the tensile strain of the GaN epilayers mainly decreases with the strain of the AlN buffer layers varied from tensile to compressive. A model based on the strain evolution during the epitaxial growth is proposed to provide a valuable reference for the massive production of large scale and high quality GaN epilayers.
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19

Chen, P., R. Zhang, X. F. Xu, Z. Z. Chen, Y. G. Zhou, S. Y. Xie, Y. Shi, et al. "Oxidation of Gallium Nitride Epilayers in Dry Oxygen." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 866–72. http://dx.doi.org/10.1557/s1092578300005196.

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The oxidation of GaN epilayers in dry oxygen has been studied. The 1-µm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition were used in this work. The oxidation of GaN in dry oxygen was performed at various temperatures for different time. The oxide was identified as the monoclinic β-Ga2O3 by a θ−2θ scan X-ray diffraction (XRD). The scanning electron microscope observation shows a rough oxide surface and an expansion of the volume. XRD data also showed that the oxidation of GaN began to occur at 800°C. The GaN diffraction peaks disappeared at 1050°C for 4 h or at 1100°C for 1 h, which indicates that the GaN epilayers has been completely oxidized. From these results, it was found that the oxidation of GaN in dry oxygen was not layer-by-layer and limited by the interfacial reaction and diffusion mechanism at different temperatures.
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20

Kang, Junyong, and Tomoya Ogawa. "Misfit dislocations and stresses in GaN epilayers." Applied Physics Letters 71, no. 16 (October 20, 1997): 2304–6. http://dx.doi.org/10.1063/1.120056.

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21

Tchounkeu, Magloire, Olivier Briot, Bernard Gil, Jean Paul Alexis, and Roger‐Louis Aulombard. "Optical properties of GaN epilayers on sapphire." Journal of Applied Physics 80, no. 9 (November 1996): 5352–60. http://dx.doi.org/10.1063/1.363475.

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22

Eckey, L., U. Von Gfug, J. Holst, A. Hoffmann, B. Schineller, K. Heime, M. Heuken, O. Schön, and R. Beccard. "Compensation effects in Mg-doped GaN epilayers." Journal of Crystal Growth 189-190 (June 1998): 523–27. http://dx.doi.org/10.1016/s0022-0248(98)00344-3.

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23

Aleksiejunas, Ramunas, Mohamed Azize, Zahia Bougrioua, Tadas Malinauskas, Saulius Nargelas, and Kestutis Jarasiunas. "Carrier dynamics in Fe-doped GaN epilayers." physica status solidi (c) 6, S2 (April 8, 2009): S723—S726. http://dx.doi.org/10.1002/pssc.200880832.

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24

Katchkanov, V., K. P. O'Donnell, S. Dalmasso, R. W. Martin, A. Braud, Y. Nakanishi, A. Wakahara, and A. Yoshida. "Photoluminescence studies of Eu-implanted GaN epilayers." physica status solidi (b) 242, no. 7 (June 2005): 1491–96. http://dx.doi.org/10.1002/pssb.200440032.

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25

Ryu, J. H., Y. S. Katharria, H. Y. Kim, H. K. Kim, K. B. Ko, N. Han, J. H. Kang, Y. J. Park, E. K. Suh, and C. H. Hong. "Stress-relaxed growth of n-GaN epilayers." Applied Physics Letters 100, no. 18 (April 30, 2012): 181904. http://dx.doi.org/10.1063/1.4710561.

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26

Kang, J., and T. Ogawa. "Yellow luminescence from precipitates in GaN epilayers." Applied Physics A: Materials Science & Processing 69, no. 6 (December 1, 1999): 631–35. http://dx.doi.org/10.1007/s003390051044.

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27

Ivantsov, Vladimir, and Anna Volkova. "A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching." ISRN Condensed Matter Physics 2012 (August 30, 2012): 1–6. http://dx.doi.org/10.5402/2012/184023.

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It has been shown during the present study that the E-etching at elevated temperatures can be adopted for the dislocation etching in hydride vapor-phase epitaxy (HVPE) GaN layers. It has been found that the X-ray diffraction (XRD) evaluation of the dislocation density in the thicker than 6 μm epilayers using conventional Williamson-Hall plots and Dunn-Koch equation is in an excellent agreement with the results of the elevated-temperature E-etching. The dislocation distribution measured for 2-inch GaN-on-sapphire substrate suggests strongly the influence of the inelastic thermal stresses on the formation of the final dislocation pattern in the epilayer.
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28

Mickevičius, J., G. Tamulaitis, M. S. Shur, Q. Fareed, J. P. Zhang, and R. Gaska. "Saturated gain in GaN epilayers studied by variable stripe length technique." Journal of Applied Physics 99, no. 10 (May 15, 2006): 103513. http://dx.doi.org/10.1063/1.2196111.

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29

Na, Hyun-Seok. "In-situ Monitoring of GaN Epilayers by Spectral Reflectance." Journal of the Korean Vacuum Society 20, no. 5 (September 30, 2011): 361–66. http://dx.doi.org/10.5757/jkvs.2011.20.5.361.

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30

Xu, Yichao, Jun Zou, Xiaoyan Lin, Wenjuan Wu, Wenbo Li, Bobo Yang, and Mingming Shi. "Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser." Applied Sciences 8, no. 10 (October 8, 2018): 1842. http://dx.doi.org/10.3390/app8101842.

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In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) epilayers. The striped grooves of patterned sapphire substrate are ablated by femtosecond laser. After the process of metal-organic chemical vapor deposition (MOCVD) method, the c-plane GaN epitaxial layers grown on striped PSS have larger crystallite size, which brings much less crystal boundary. There is much less compressive stress between the GaN crystals which improves the smoothness and compactness of GaN epilayers. This result demonstrates a significant improvement in the crystallinity of the c-plane GaN epitaxial layers grown on striped PSS.
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31

Tian, Yuan, Li Min Liang, Wen Cheng Wu, Qiu Yan Hao, and Cai Chi Liu. "Investigation on Dislocations in C-Plane Electron-Irradiated GaN Epilayers by Wet Chemical Etching." Advanced Materials Research 335-336 (September 2011): 531–34. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.531.

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The dislocations in electron-irradiated c-plane n-GaN epitaxial layers grown on c-plane sapphire substrates by MOCVD were revealed by several different wet chemical etching methods. And the defect-selective etching method combined with SEM was carried out to study the mechanism of dislocations generation of GaN. SEM images of GaN epilayers with several individual methods are in good agreement with each other. Among all the defects, threading dislocations (TDs) dominated in the GaN epilayers and these defects could be divided into three types. In addition, the EPDs after annealing at various temperatures were studied. The experimental results showed that suitable thermal annealing can eliminate some dislocations.
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32

Dobrovolskas, Darius, Shingo Arakawa, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi, Jūras Mickevičius, and Gintautas Tamulaitis. "Enhancement of InN Luminescence by Introduction of Graphene Interlayer." Nanomaterials 9, no. 3 (March 12, 2019): 417. http://dx.doi.org/10.3390/nano9030417.

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Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride layers. The InN epilayers are deposited by radio-frequency plasma-assisted molecular beam epitaxy (MBE), and are characterized by spatially-resolved photoluminescence spectroscopy using confocal microscopy. A small blue shift of the emission band from the band gap evidences a low density of equilibrium carriers, and a high quality of InN on multilayer graphene. A deposition temperature of ~375 °C is determined as optimal. The granularity, which is observed for the InN epilayers deposited on multilayer graphene, is shown to be eliminated, and the emission intensity is further enhanced by the introduction of an aluminum nitride (AlN) buffer layer between graphene and InN.
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33

Shon, Yoon, Y. H. Kwon, T. W. Kang, X. Fan, D. Fu, and Yongmin Kim. "Optical characteristics of Mn+-ion-implanted GaN epilayers." Journal of Crystal Growth 245, no. 3-4 (November 2002): 193–97. http://dx.doi.org/10.1016/s0022-0248(02)01664-0.

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34

Suresh Kumar, V., J. Kumar, D. Kanjilal, K. Asokan, T. Mohanty, A. Tripathi, Francisca Rossi, A. Zappettini, L. Lazzarani, and C. Ferrari. "Investigations on 40MeV Li3+ ions irradiated GaN epilayers." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 266, no. 8 (April 2008): 1799–803. http://dx.doi.org/10.1016/j.nimb.2008.01.070.

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35

Park, Seong-Eun, Sung-Mook Lim, Cheul-Ro Lee, Chang Soo Kim, and Byungsung O. "Influence of SiN buffer layer in GaN epilayers." Journal of Crystal Growth 249, no. 3-4 (March 2003): 487–91. http://dx.doi.org/10.1016/s0022-0248(02)02357-6.

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36

Jur??nas, S., E. Kuok?tis, S. Miasojedovas, G. Kuril?ik, A. ?ukauskas, C. Q. Chen, J. W. Yang, V. Adivarahan, M. Asif Khan, and M. S. Shur. "Luminescence of highly excited nonpolara-plane GaN epilayers." physica status solidi (c) 2, no. 7 (May 2005): 2770–73. http://dx.doi.org/10.1002/pssc.200461345.

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37

Coquillat, D., S. K. Murad, A. Ribayrol, C. J. M. Smith, R. M. De La Rue, Chris D. W. Wilkinson, O. Briot, and R. L. Aulombard. "Nanometre Scale Reactive Ion Etching of GaN Epilayers." Materials Science Forum 264-268 (February 1998): 1403–6. http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1403.

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38

Deleporte, E., C. Guénaud, M. Voos, B. Beaumont, and P. Gibart. "Strain state in GaN epilayers from optical experiments." Journal of Applied Physics 89, no. 2 (January 15, 2001): 1116–19. http://dx.doi.org/10.1063/1.1329144.

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39

As, D. J., D. Schikora, A. Greiner, M. Lübbers, J. Mimkes, and K. Lischka. "p- andn-type cubic GaN epilayers on GaAs." Physical Review B 54, no. 16 (October 15, 1996): R11118—R11121. http://dx.doi.org/10.1103/physrevb.54.r11118.

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40

Kim, Hyonju, T. G. Andersson, J. M. Chauveau, and A. Trampert. "As-mediated stacking fault in wurtzite GaN epilayers." Applied Physics Letters 81, no. 18 (October 28, 2002): 3407–9. http://dx.doi.org/10.1063/1.1519096.

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41

Bodiou, L., A. Braud, C. Terpin, J. L. Doualan, R. Moncorgé, K. Lorenz, and E. Alves. "Spectroscopic investigation of implanted epilayers of Tm3+:GaN." Journal of Luminescence 122-123 (January 2007): 131–33. http://dx.doi.org/10.1016/j.jlumin.2006.01.124.

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42

Kang, Junyong, and Tomoya Ogawa. "Precipitates in GaN epilayers grown on sapphire substrates." Journal of Materials Research 13, no. 8 (August 1998): 2100–2104. http://dx.doi.org/10.1557/jmr.1998.0293.

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Precipitates in GaN epilayers grown on sapphire substrates were investigated by atomic number contrast (ANC), wavelength-dispersive x-ray spectrometry (WDS), energy-dispersive spectrometry (EDS), and cathodoluminescence (CL) techniques. The results showed that the precipitates are mainly composed of gallium and oxygen elements and distribute more sparsely and inhomogeneously in directions in the sample grown on substrate nitridated for a longer period. Yellow luminescence intensity was imaged to be stronger in the precipitates. The results suggest that the precipitates are formed on dislocations and grain boundaries by substituting oxygen onto the nitrogen site, and result in the formations of deep levels nearby.
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43

Drozdov, Yu N., M. N. Drozdov, O. I. Khrykin, and V. I. Shashkin. "Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers." Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques 4, no. 6 (November 2010): 998–1001. http://dx.doi.org/10.1134/s1027451010060200.

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44

Malinovskis, P., A. Mekys, A. Kadys, T. Malinauskas, T. Grinys, V. Bikbajevas, R. Tomašiūnas, and J. Storasta. "Peculiarities of galvanomagnetic effects in GaN epilayers and GaN/InGaN quantum wells." physica status solidi (c) 9, no. 3-4 (February 29, 2012): 689–92. http://dx.doi.org/10.1002/pssc.201100407.

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45

Zou, Xinbo, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau. "Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers." IEEE Electron Device Letters 37, no. 5 (May 2016): 636–39. http://dx.doi.org/10.1109/led.2016.2548488.

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46

Wang, L. S., S. Tripathy, B. Z. Wang, and S. J. Chua. "GaN epilayers on nanopatterned GaN/Si(111) templates: Structural and optical characterization." Applied Surface Science 253, no. 1 (October 2006): 214–18. http://dx.doi.org/10.1016/j.apsusc.2006.05.107.

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47

Kawan, Anil, and Soon Jae Yu. "Laser Lift-Off of the Sapphire Substrate for Fabricating Through-AlN-Via Wafer Bonded Absorption Layer Removed Thin Film Ultraviolet Flip Chip LED." Transactions on Electrical and Electronic Materials 22, no. 2 (February 15, 2021): 128–32. http://dx.doi.org/10.1007/s42341-020-00273-1.

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AbstractIn this study we report chip fabrication process that allows the laser lift-off of the sapphire substrate for the transfer of the GaN based thin film flip chip to the carrier wafer. The fabrication process includes 365-nm ultraviolet flip chip LED wafer align bonding with through-AlN-via wafer and sapphire laser lift-off. n-holes with the diameter of 100 µm were etched on the GaN epilayers for accessing n-type GaN. Through-AlN-via size was 110-µm and filled by Cu electroplating method for the electrical connection. Mechanical stabilization to prevent the GaN epilayers cracking and fragmentation during laser lift-off was achieved by utilizing epoxy based SU-8 photoresist support.
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48

Hsueh, Hsu-Hung, Sin-Liang Ou, Yu-Che Peng, Chiao-Yang Cheng, Dong-Sing Wuu, and Ray-Hua Horng. "Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes." Journal of Nanomaterials 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/2701028.

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The flat-top pyramid patterned sapphire substrates (FTP-PSSs) have been prepared for the growth of GaN epilayers and the fabrication of lateral-type light-emitting diodes (LEDs) with an emission wavelength of approximately 470 nm. Three kinds of FTP-PSSs, which were denoted as FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C, respectively, were formed through the sequential wet etching processes. The diameters of circle areas on the top regions of these three FTP-PSSs were 1, 2, and 3 μm, respectively. Based on the X-ray diffraction results, the full-width at half-maximum values of rocking curves at (002) plane for the GaN epilayers grown on conventional sapphire substrate (CSS), FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 412, 238, 346, and 357 arcsec, while these values at (102) plane were 593, 327, 352, and 372 arcsec, respectively. The SpeCLED-Ratro simulation results reveal that the LED prepared on FTP-PSS-A has the highest light extraction efficiency than that of the other devices. At an injection current of 350 mA, the output powers of LEDs fabricated on CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 157, 254, 241, and 233 mW, respectively. The results indicate that both the crystal quality of GaN epilayer and the light extraction of LED can be improved via the use of FTP-PSS, especially for the FTP-PSS-A.
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Lo Nigro, Raffaella, Giuseppe Greco, L. Swanson, G. Fisichella, Patrick Fiorenza, Filippo Giannazzo, S. Di Franco, et al. "Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices." Materials Science Forum 740-742 (January 2013): 777–80. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.777.

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This paper reports on a structural and electrical analysis of nickel oxide (NiO) films grown both on AlGaN/GaN heterostructures and on 4H-SiC epilayers. The films were grown by metal organic chemical vapor deposition (MOCVD). The structural analysis showed epitaxially oriented films over the hexagonal substrates. The electrical characterization of simple devices onto AlGaN/GaN heterostructures enabled to demonstrate a dielectric constant of 11.7 and a reduction of the leakage current in insulated gate structures. On the other hand, epitaxial NiO films grown onto 4H-SiC epilayers exhibited the presence of an interfacial SiO2layer and twinned NiO grains, and a lower dielectric constant.
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Ponce, F. A. "Defects and Interfaces in GaN Epitaxy." MRS Bulletin 22, no. 2 (February 1997): 51–57. http://dx.doi.org/10.1557/s0883769400032577.

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The recent developments in III-V-nitride thin-film technology has produced significant advances in high-performance devices operating in the blue and green range of the visible spectrum. These materials are grown by metalorganic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Highly specular surfaces are possible by use of low-temperature buffer layers following the method developed by Akasaki et al. The thin films thus grown have an interesting microstructure, quite different from other known semiconductors. In particular, epilayers with high optoelectronic performance are characterized by high dislocation densities, several orders of magnitude above those found in other optoelectronic semiconductor films. The lattice mismatch between sapphire and GaN is ∼14%, and the thermal-expansion difference is close to 80%. In spite of these large differences, little thermal strain is measurable at room temperature in epilayers grown at temperatures above 1000°C. Epitaxy on other systems, like SiC, with much better similarity in lattice parameter and thermal-expansion characteristics, has failed to produce better performance than films grown on sapphire. The origin of these puzzling properties of nitrides on sapphire rests in its microstructure. This article presents a survey of the microstructure associated with epitaxy of nitrides by MOCVD.
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