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Relevant bibliographies by topics / GaN FETs

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Academic literature on the topic 'GaN FETs'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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Journal articles on the topic "GaN FETs"

1

Zheng, Zheyang, Tao Chen, Li Zhang, Wenjie Song, and Kevin J. Chen. "Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform." Applied Physics Letters 120, no. 15 (2022): 152102. http://dx.doi.org/10.1063/5.0086954.

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Enhancement-mode (E-mode) p-channel gallium nitride (GaN) field-effect transistors (p-FETs) are essential components for GaN-based complementary logic circuits. For the ease of integration with n-FETs, they could be fabricated on the commercial p-GaN gate high-electron-mobility-transistor (HEMT) platform, on which the two-dimensional electron gas at the AlGaN/GaN hetero-interface is completely depleted in as-grown epi-structures. However, under the gated region where p-GaN is recessed and depleted at thermal equilibrium, a parasitic electron channel (PEC) could appear at the AlGaN/GaN interfac

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Binari, S. C., W. Kruppa, H. B. Dietrich, G. Kelner, A. E. Wickenden, and J. A. Freitas. "Fabrication and characterization of GaN FETs." Solid-State Electronics 41, no. 10 (1997): 1549–54. http://dx.doi.org/10.1016/s0038-1101(97)00103-2.

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Tang, K., W. Huang, and T. Paul Chow. "GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces." Journal of Electronic Materials 38, no. 4 (2009): 523–28. http://dx.doi.org/10.1007/s11664-008-0617-y.

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Shur, Michael S., and M. Asif Khan. "GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors." MRS Bulletin 22, no. 2 (1997): 44–50. http://dx.doi.org/10.1557/s0883769400032565.

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In this article, we review recent progress in GaN-based photodetectors and field-effect transistors (FETs), including optoelectronic FETs, and discuss materials parameters and fabrication technologies that determine the device characteristics of these two device families. Many types of visible-blind photodetectors and nearly all types of FETs have been demonstrated in GaN-based materials systems. However many challenges remain, both in improving the existing devices—the performance of which is still quite far from reaching its full potential—and in developing entirely new devices, which use un

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Huang, W., T. Khan, and T. P. Chow. "Optimization of GaN MOS capacitors and FETs." physica status solidi (c) 5, no. 6 (2008): 2016–18. http://dx.doi.org/10.1002/pssc.200778694.

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Golenkov, A. "Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs." Semiconductor physics, quantum electronics and optoelectronics 18, no. 1 (2015): 40–45. http://dx.doi.org/10.15407/spqeo18.01.040.

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Kaur, Puneet. "Evaluating DC-DC Buck Converter Efficiency with MOSFET and GaN-FET Technology." Journal of Scientific Research 17, no. 2 (2025): 393–405. https://doi.org/10.3329/jsr.v17i2.75245.

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This paper assesses the efficiency of DC-DC buck converters utilizing both MOSFET and GaN-FET technology. An analysis is conducted on single-phase switched capacitor buck converter equipped with GaN FETs, highlighting its capability to operate at higher frequencies due to the rapid switching speeds of GaN FETs. This feature results in a decreased size of passive components in comparison to traditional buck converters. Additionally, the specifications for the inductor are also examined. To demonstrate the advantages of GaN FETs over MOSFETs in DC-DC converters, the performance of the GaN-FET ba

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Baba, Ryohei, Osamu Machida, Nobuo Kaneko, Akio Iwabuchi, Koji Yano, and Takashi Matsumoto. "Development of AlGaN/GaN FETs for Power Supply." IEEJ Transactions on Electronics, Information and Systems 130, no. 6 (2010): 924–28. http://dx.doi.org/10.1541/ieejeiss.130.924.

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Binari, S. C., P. B. Klein, and T. E. Kazior. "Trapping effects in GaN and SiC microwave FETs." Proceedings of the IEEE 90, no. 6 (2002): 1048–58. http://dx.doi.org/10.1109/jproc.2002.1021569.

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Binari, Steven C., K. Doverspike, G. Kelner, H. B. Dietrich, and A. E. Wickenden. "GaN FETs for microwave and high-temperature applications." Solid-State Electronics 41, no. 2 (1997): 177–80. http://dx.doi.org/10.1016/s0038-1101(96)00161-x.

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Dissertations / Theses on the topic "GaN FETs"

1

Alomari, Mohammed [Verfasser]. "Technology and characterization of InAlN/GaN FETs / Mohammed Alomari." Ulm : Universität Ulm. Fakultät für Ingenieurwissenschaften und Informatik, 2013. http://d-nb.info/1037157974/34.

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Malik, Adil Mahmood. "Technology and physics of gate recessed GaN AlGaN FETs." [S.l. : s.n.], 2003. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-30157.

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Neuburger, Martin. "Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung." [S.l. : s.n.], 2006. http://nbn-resolving.de/urn:nbn:de:bsz:289-vts-57224.

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Fariza, Aqdas [Verfasser], and Armin [Gutachter] Dadgar. "Surface and electrical properties of GaN layers : impact on GaN/AlInN FETs / Aqdas Fariza ; Gutachter: Armin Dadgar." Magdeburg : Universitätsbibliothek Otto-von-Guericke-Universität, 2019. http://d-nb.info/121993691X/34.

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Nakkala, Poornakarthik. "Pulsed I-V and RF characterization and modeling of AIGaN HEMTs and Graphene FETs." Thesis, Limoges, 2015. http://www.theses.fr/2015LIMO0028/document.

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Ces travaux de recherche se rapportent à l’évaluation des potentialités des transistors à base de graphène ainsi que la mise en évidence des effets dispersifs sur les transistors HEMTs en technologie Nitrure de Gallium. Les principaux résultats issus de ces travaux sont obtenus suite au développement d’un banc de caractérisation spécifique. L’objectif principal pour la caractérisation des transistors en technologie AlGaN/GaN a été de développer des techniques innovantes de caractérisation. Des mesures IV et RF impulsionnelles ont été réalisées afin de caractériser et modéliser les phénomènes d

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Twieg, Michael D. "APPLICATIONS OF GALLIUM NITRIDE FETS TO RF ARRAYS FOR MAGNETIC RESONANCE IMAGING." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1459253932.

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Doo, Seok Joo. "New Pulsed-IV Pulsed-RF Measurement Techniques For Characterizing Power FETs For Pulsed-RF Power Amplifier Design." The Ohio State University, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=osu1211981949.

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Faruque, Shams Omar. "Power GaN FET Testing." University of Toledo / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1418392583.

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Brooks, Clive Raymond. "GaN microwave power FET nonlinear modelling techniques." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4306.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.<br>ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN semiconductor technology is fast emerging and it is expected that these devices will play an important role in RF and microwave power amplifier applications. One of the main advantages of the new GaN semicon

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Fan, Qian. "GaN heterojunction FET device Fabrication, Characterization and Modeling." VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/35.

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This dissertation is focused on the research efforts to develop the growth, processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high power and microwave applications. Although enormous progress has been made on GaN transistors in the past decades, the technologies for nitride transistors are still not mature, esp

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Books on the topic "GaN FETs"

1

United States. General Accounting Office. General Government Division, ed. User fees for firearms licenses. The Office, 1994.

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Commission, Victoria Essential Services. Early termination fees compliance review: Issues paper. Essential Services Commission, 2005.

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1943-, Chatterjee Molly S., ed. Biochemical monitoring of the fetus. Springer-Verlag, 1993.

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United, States Congress Senate Committee on Energy and Natural Resources Subcommittee on Energy Research Development Production and Regulation. Federal Royalty Certainty Act: Hearing before the Subcommittee on Energy Research, Development, Production, and Regulation of the Committee on Energy and Natural Resources, United States Senate, One Hundred Sixth Congress, first session, on S. 924 ... May 18, 1999. U.S. G.P.O., 1999.

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Hervé, Gérald. Des pavois et des fers, version définitive: Suivie des lettres à ses parents, 1953-1955. Ligne d'ombre, 2011.

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Pennsylvania. General Assembly. Legislative Budget and Finance Committee. The adequacy of fees charged in Pennsylvania's instant check system for firearms purchases: A review conducted pursuant to Act 1995-17 (First Special Session of 1995). The Committee, 2000.

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United States. Congress. House. Committee on Ways and Means. Subcommittee on Health. Hearing on gainsharing: Hearing before the Subcommittee on Health, Committee on Ways and Means, U.S. House of Representatives, One Hundred Ninth Congress, first session, October 7, 2005. U.S. G.P.O., 2006.

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Workshop on Single Pass, High Gain FELs Starting from Noise, Aiming at Coherent X-Rays (1997 Garda Lake, Italy). Towards X-ray free electron lasers: Workshop on Single Pass, High Gain FELs Starting from Noise, Aiming at Coherent X-Rays; Garda Lake, Italy, June 1997. Edited by Bonifacio R and Barletta W. A. American Institute of Physics, 1997.

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Africa, South. Attorneys, Notaries & Conveyancers Admission Act: Act no. 53 of 1979, as amended up to and including amendments effected by, Act no. 108 of 1984, with rules made under the authority of section 74 G.N. No. R7164 of 1st August 1980, and scale of fees, G.N. no. R195 of 1st February 1985. Unity Secretarial Services, 1985.

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Committee, New Jersey Legislature Senate Legislative Oversight. Committee meeting of Senate Legislative Oversight Committee: Senate concurrent resolution no. 36 (determines that DLPS regulations including hypnotherapy within practice of psychology are inconsistent with legislative intent) : Senate concurrent resolution no. 62 and Assembly concurrent resolution no. 51 (determines that proposed Board of Nursing regulations regarding the competency evaluation of homemaker-home health aides are not consistent with legislative intent). The Committee, 1994.

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Book chapters on the topic "GaN FETs"

1

Morkoç, Hadis, and Lianghong Liu. "GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors." In Nitride Semiconductors. Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607641.ch12.

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Dixit, Ayushi, Khushwant Sehra, Poonam Kasturi, and Manoj Saxena. "Impact of Angled Heavy Ion Particle Strike on GaN-Based P-Channel FETs for Space Applications." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-96-3758-4_14.

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Togni, Elie, Fabien Harel, Frédéric Gustin, and Daniel Hissel. "Design and Control of a Synchronous Interleaved Boost ConverterBased on GaN FETs for PEM Fuel Cell Applications." In Lecture Notes in Electrical Engineering. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-24837-5_20.

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Srivastava, Shobhit, and Abhishek Acharya. "Challenges and future scope of gate-all-around (GAA) transistors." In Device Circuit Co-Design Issues in FETs. CRC Press, 2023. http://dx.doi.org/10.1201/9781003359234-11.

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Choudhury, Nilotpal, Tarun Samadder, Richard Southwick, Huimei Zhou, Miaomiao Wang, and Souvik Mahapatra. "BAT Framework Modeling of RMG HKMG GAA-SNS FETs." In Recent Advances in PMOS Negative Bias Temperature Instability. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-6120-4_12.

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Mahapatra, Souvik, Narendra Parihar, Nilotpal Choudhury, Ravi Tiwari, and Tarun Samadder. "BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs." In Recent Advances in PMOS Negative Bias Temperature Instability. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-6120-4_13.

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Werner, Micha H. "Befreit Moral? Immanuel Kants autonomieorientierte Ethik." In Einführung in die Ethik. J.B. Metzler, 2020. http://dx.doi.org/10.1007/978-3-476-05293-3_6.

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ZusammenfassungMoralphilosophischer Empirismus: Die bisherige Darstellung neuzeitlicher Ethik war hinsichtlich der repräsentierten philosophischen Strömungen einseitig: Unter den neuzeitlichen Autoren wurden ausschließlich Vertreter des Empirismus in den Blick genommen (zur Unterscheidung zwischen Empirismus und Rationalismus siehe Kap. 10.1007/978-3-476-05293-3_3). Sie teilen (will man sie nicht gar als Vernunftskeptiker interpretieren) ein instrumentelles Verständnis der praktischen Vernunft. Entsprechend bleiben ihnen im Hinblick auf die Interpretation der Moral nur zwei Optionen: Entweder

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Eke, Norbert Otto. "»Wenn die Heilige Zeit da ist, werde ich […] weggehen«." In (Un)verfügbar - Kulturen des Heiligen. Bielefeld University Press / transcript Verlag, 2023. http://dx.doi.org/10.14361/9783839466117-011.

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In ihrem Film Madeinusa (Peru/Spanien 2006) entwirft die Regisseurin Claudia Llosa den eigentümlichen mundus inversus einer ,verkehrten' Welt, die ihre Mitte findet in einem christlich-abendländische und indigene Kultformen verschmelzenden Fest der Überschreitung: der Tiempo santo (,Heilige Zeit'). Als kollektive Synthesis ist es einem kulturellen ,misreading' im Horizont inter- und transkultureller Hybridisierungsprozesse geschuldet. Als vitalistische Feier des Lebens schafft das Fest der ,Heiligen Zeit' einen Raum der Lizenzen, die kathartische Entladungen ermöglichen; sie zielt damit auf di

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Bhol, Krutideepa, Biswajit Jena, Umakanta Nanda, Shubham Tayal, and Amit Kumar Jain. "Novel Architecture in Gate-All-Around (GAA) MOSFET with High-k Dielectric for Biomolecule Detection." In High-k Materials in Multi-Gate FET Devices. CRC Press, 2021. http://dx.doi.org/10.1201/9781003121589-8.

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Jansen, Till. "Des Kaisers neue Kleider. Über die Verwaltung des Unverwaltbaren in der forensischen Psychiatrie." In AdminiStudies. Formen und Medien der Verwaltung. Springer Berlin Heidelberg, 2024. http://dx.doi.org/10.1007/978-3-662-67712-4_10.

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Zusammenfassung.Die Verwaltung als rationale Herrschaftstechnik setzt Rationalität auf Seite ihrer Subjekte voraus. Stellt sie jedoch Irrationalität fest und ist diese gar verbunden mit der Gefährlichkeit der Irrationalen für die öffentliche Sicherheit, hat die Verwaltung ein Problem. Hier tritt die forensische Psychiatrie auf den Plan. Sie macht sich auf, die gefährliche Irrationalität zu zähmen. Sie kategorisiert und entzieht Freiheit. Doch am Ende steht auch ihr nur der rationale Appell zur Verfügung, der an der gestellten Diagnose abzuperlen droht. „Sie sind irrational“, ruft die Psychiatr

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Conference papers on the topic "GaN FETs"

1

Tang, Chuying, Fangzhou Du, Chun Fu, et al. "Investigation on Gate Etching and Stability of GaN p-FETs." In 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2024. http://dx.doi.org/10.1109/ipfa61654.2024.10691287.

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Gao, Xuming, Aimin Zhang, Jingjing Huang, Zhe Li, Yue Wang, and Shuhai Lv. "Current Sharing Control and Influencing Factors for Parallel GaN FETs." In 2024 IEEE 19th Conference on Industrial Electronics and Applications (ICIEA). IEEE, 2024. http://dx.doi.org/10.1109/iciea61579.2024.10665281.

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Singh, Sneha, and Rudra Sankar Dhar. "AC and DC Performance Analysis of GaN-Based GAA FETs with High-K Spacers." In 2024 Recent Advances in Sustainable Engineering and Future Technologies (RASEFT). IEEE, 2024. https://doi.org/10.1109/raseft61414.2024.00016.

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Nguyen, Duy T., Soham Roy, Elijah Macias, and Alex J. Hanson. "Ultra-fast Gate Drivers with Nanosecond Propagation Delays for GaN FETs." In 2024 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2024. https://doi.org/10.1109/ecce55643.2024.10861410.

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Singh, Sneha, Priya Devi, and Rudra Sankar Dhar. "Development and Analysis of Gate Underlap GaN Gate-All-Around FETs." In 2025 3rd International Conference on Smart Systems for applications in Electrical Sciences (ICSSES). IEEE, 2025. https://doi.org/10.1109/icsses64899.2025.11009664.

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Zhang, Gang, Mario Schweizer, Francisco Canales, and Thiago Batista Soeiro. "Flying Capacitor Converter Using Low-Voltage GaN-FETs for Grid-Connected Applications." In 2024 Energy Conversion Congress & Expo Europe (ECCE Europe). IEEE, 2024. http://dx.doi.org/10.1109/ecceeurope62508.2024.10752075.

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Morales-Fernandez, Ainhoa, Maria Marante-Boado, Pedro Toimil-Cornado, Monica Fernandez-Barciela, Fernando Martin-Rodriguez, and Paul J. Tasker. "Single-Ended and Balanced Frequency Doublers 2.45 to 4.9 GHz using GaN FETs." In 2024 54th European Microwave Conference (EuMC). IEEE, 2024. http://dx.doi.org/10.23919/eumc61614.2024.10732057.

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Stainthorpe, Ben, Mohamed Dahidah, and Volker Pickert. "An Experimental Performance Comparison of GaN and Silicon Based FETs in an Emergency LED Driver." In 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). IEEE, 2024. https://doi.org/10.1109/wipdaeurope62087.2024.10797257.

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Munasinghe, Isuru, and Ashen Rodrigo. "Design and Performance Optimization of a Low-Power Half-Bridge LLC Resonant Converter Using GaN FETs." In 2025 15th International Conference on Electrical Engineering (ICEENG). IEEE, 2025. https://doi.org/10.1109/iceeng64546.2025.11031338.

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Yan, Hongyang, and E. M. Sankara Narayanan. "Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications." In 15th International Seminar On Power Semiconductors. Czech Technical University in Prague, 2021. http://dx.doi.org/10.14311/isps.2021.017.

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Reports on the topic "GaN FETs"

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Ruether, J. A. FETC Programs for Reducing Greenhouse Gas Emissions. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/600529.

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Allende López, Marcos, and Adrián Pareja. Open configuration options GAS Distribution Protocol for Permissioned-Public Ethereum-Based Blockchain Networks. Edited by Alejandro Pardo and Mariana Gutierrez. Inter-American Development Bank, 2022. http://dx.doi.org/10.18235/0004243.

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This paper presents a protocol to manage decentralized access and use of Permissioned Public Blockchain Networks using Ethereum technology as the underlying protocol. It proposes a solution to avoid DDOS and enforce accountability while eliminating transaction fees. The protocol has been tested and implemented in the LACChain Blockchain Networks.

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Hearns, Quincy M., and David Mitchell. Analysis of Acquisition Workforce Responses to Recent GAO Reports on Award and Incentive Fees. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada475945.

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Agrawal, Asha Weinstein, and Hilary Nixon. What Do Americans Think About Federal Tax Options to Support Transportation? Results from Year Fifteen of a National Survey. Mineta Transportation Institute, 2024. http://dx.doi.org/10.31979/mti.2024.2428.

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This report summarizes the results from the fifteenth year of a national public opinion survey asking U.S. adults questions related to their views on federal transportation taxes. A nationally representative sample of 2,522 respondents completed the online survey from February 7 to March 12, 2024. The questions test public opinions about raising the federal gas tax rate, replacing the federal gas tax with a new mileage fee, and imposing a mileage fee just on commercial travel. In addition to asking directly about support for these tax options, the survey collected data on respondents’ views on

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Berry, D. A. [TDA`s hot gas desulfurization sorbent]. TDA Inc./FETC CRADA No. 97-F003, final report. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/629371.

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Weinstein Agrawal, Asha, Hilary Nixon, and Adam Azevedo. What Do Americans Think About Federal Tax Options to Support Transportation? Results from Year Fourteen of a National Survey. Mineta Transportation Institute, 2023. http://dx.doi.org/10.31979/mti.2023.2303.

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This report summarizes the results from the fourteenth year of a national public opinion survey asking U.S. adults questions related to their views on federal transportation taxes. A nationally representative sample of 2,531 respondents completed the online survey from February 13 to March 23, 2023. The questions test public opinions about raising the federal gas tax rate, replacing the federal gas tax with a new mileage fee, and imposing a mileage fee just on commercial travel. In addition to asking directly about support for these tax options, the survey collected data on respondents’ views

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Agrawal, Asha Weinstein, and Hilary Nixon. What Do Americans Think About Federal Tax Options to Support Transportation? Results from Year Thirteen of a National Survey. Mineta Transportation Institute, 2023. http://dx.doi.org/10.31979/mti.2023.2208.2.

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This report summarizes the results from the thirteenth year of a national public opinion survey asking U.S. adults questions related to their views on federal transportation taxes. A nationally-representative sample of 2,620 respondents completed the online survey from January 31 to March 10, 2022. The questions test public opinions about raising the federal gas tax rate, replacing the federal gas tax with a new mileage fee, and imposing a mileage fee just on commercial travel. In addition to asking directly about support for these tax options, the survey collected data on respondents’ views o

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Mathur, Shishur, and Ralph Robinson. Transportation Utility Fee to Fund Transit in California. Mineta Transportation Institute, 2022. http://dx.doi.org/10.31979/mti.2022.2032.

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Public transit is a key tool to reduce greenhouse gas (GHG) emissions to combat climate change; improve safety for pedestrians, cyclists, and drivers; and expand accessibility and mobility for all. However, we can only realize this potential by making sufficient investments to provide transit service levels that attract and retain greater ridership. To help with this needed investment, a handful of local governments have turned to transportation utility fees (TUFs), primarily collected as a monthly charge on customers' utility bills or property tax bills. While more widely used to support stre

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Agrawal, Asha Weinstein, and Hilary Nixon. What Do Americans Think About Federal Tax Options to Support Transportation? Results from Year Twelve of a National Survey. Mineta Transportation Institute, 2021. http://dx.doi.org/10.31979/mti.2021.2101.

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This report summarizes the results from the twelfth year of a national public opinion survey asking U.S. adults questions related to their views on federal transportation taxes. A nationally-representative sample of 2,516 respondents completed the online survey from February 5 to 23, 2021. The questions test public opinions about raising the federal gas tax rate, replacing the federal gas tax with a new mileage fee, and imposing a mileage fee just on commercial travel. In addition to asking directly about support for these tax options, the survey collected data on respondents’ views on the qua

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Vieira, Greg, and Daniel Olsen. PR179-22206-R01 Prechamber Air and Fuel Premixing Proof of Concept. Pipeline Research Council International, Inc. (PRCI), 2024. http://dx.doi.org/10.55274/r0000099.

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This study investigates the feasibility of injecting a premixed air and fuel charge into the precombustion chamber (PCC) of a Cooper-Bessemer GMV-4TF 2-stroke lean-burn natural gas engine. The primary ob-jectives are to enhance combustion stability, reduce emissions, and address the challenges associated with stratification within the PCC. Computational fluid dynamics (CFD) simulations were conducted to evaluate both ideal and practical premixed scenarios. The ideal premixed scenario aimed to achieve improved ho-mogeneity and faster flame propagation. Low-pressure premixed injections were test

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