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Journal articles on the topic 'GaN FETs'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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1

Zheng, Zheyang, Tao Chen, Li Zhang, Wenjie Song, and Kevin J. Chen. "Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform." Applied Physics Letters 120, no. 15 (2022): 152102. http://dx.doi.org/10.1063/5.0086954.

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Enhancement-mode (E-mode) p-channel gallium nitride (GaN) field-effect transistors (p-FETs) are essential components for GaN-based complementary logic circuits. For the ease of integration with n-FETs, they could be fabricated on the commercial p-GaN gate high-electron-mobility-transistor (HEMT) platform, on which the two-dimensional electron gas at the AlGaN/GaN hetero-interface is completely depleted in as-grown epi-structures. However, under the gated region where p-GaN is recessed and depleted at thermal equilibrium, a parasitic electron channel (PEC) could appear at the AlGaN/GaN interfac

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2

Binari, S. C., W. Kruppa, H. B. Dietrich, G. Kelner, A. E. Wickenden, and J. A. Freitas. "Fabrication and characterization of GaN FETs." Solid-State Electronics 41, no. 10 (1997): 1549–54. http://dx.doi.org/10.1016/s0038-1101(97)00103-2.

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3

Tang, K., W. Huang, and T. Paul Chow. "GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces." Journal of Electronic Materials 38, no. 4 (2009): 523–28. http://dx.doi.org/10.1007/s11664-008-0617-y.

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4

Shur, Michael S., and M. Asif Khan. "GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors." MRS Bulletin 22, no. 2 (1997): 44–50. http://dx.doi.org/10.1557/s0883769400032565.

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In this article, we review recent progress in GaN-based photodetectors and field-effect transistors (FETs), including optoelectronic FETs, and discuss materials parameters and fabrication technologies that determine the device characteristics of these two device families. Many types of visible-blind photodetectors and nearly all types of FETs have been demonstrated in GaN-based materials systems. However many challenges remain, both in improving the existing devices—the performance of which is still quite far from reaching its full potential—and in developing entirely new devices, which use un

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5

Huang, W., T. Khan, and T. P. Chow. "Optimization of GaN MOS capacitors and FETs." physica status solidi (c) 5, no. 6 (2008): 2016–18. http://dx.doi.org/10.1002/pssc.200778694.

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6

Golenkov, A. "Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs." Semiconductor physics, quantum electronics and optoelectronics 18, no. 1 (2015): 40–45. http://dx.doi.org/10.15407/spqeo18.01.040.

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7

Kaur, Puneet. "Evaluating DC-DC Buck Converter Efficiency with MOSFET and GaN-FET Technology." Journal of Scientific Research 17, no. 2 (2025): 393–405. https://doi.org/10.3329/jsr.v17i2.75245.

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This paper assesses the efficiency of DC-DC buck converters utilizing both MOSFET and GaN-FET technology. An analysis is conducted on single-phase switched capacitor buck converter equipped with GaN FETs, highlighting its capability to operate at higher frequencies due to the rapid switching speeds of GaN FETs. This feature results in a decreased size of passive components in comparison to traditional buck converters. Additionally, the specifications for the inductor are also examined. To demonstrate the advantages of GaN FETs over MOSFETs in DC-DC converters, the performance of the GaN-FET ba

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8

Baba, Ryohei, Osamu Machida, Nobuo Kaneko, Akio Iwabuchi, Koji Yano, and Takashi Matsumoto. "Development of AlGaN/GaN FETs for Power Supply." IEEJ Transactions on Electronics, Information and Systems 130, no. 6 (2010): 924–28. http://dx.doi.org/10.1541/ieejeiss.130.924.

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9

Binari, S. C., P. B. Klein, and T. E. Kazior. "Trapping effects in GaN and SiC microwave FETs." Proceedings of the IEEE 90, no. 6 (2002): 1048–58. http://dx.doi.org/10.1109/jproc.2002.1021569.

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10

Binari, Steven C., K. Doverspike, G. Kelner, H. B. Dietrich, and A. E. Wickenden. "GaN FETs for microwave and high-temperature applications." Solid-State Electronics 41, no. 2 (1997): 177–80. http://dx.doi.org/10.1016/s0038-1101(96)00161-x.

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11

Morkoç, Hadis, Aldo Di Carlo, and Roberto Cingolani. "GaN-based modulation doped FETs and UV detectors." Solid-State Electronics 46, no. 2 (2002): 157–202. http://dx.doi.org/10.1016/s0038-1101(01)00271-4.

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12

Gaska, R., Q. Chen, J. Yang, et al. "AlGaN-GaN heterostructure FETs with offset gate design." Electronics Letters 33, no. 14 (1997): 1255. http://dx.doi.org/10.1049/el:19970818.

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13

Chen, Hongwei, Li Yuan, Qi Zhou, Chunhua Zhou, and Kevin J. Chen. "Normally-off AlGaN/GaN power tunnel-junction FETs." physica status solidi (c) 9, no. 3-4 (2012): 871–74. http://dx.doi.org/10.1002/pssc.201100338.

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14

Kuzuhara, Masaaki, Yuji Ando, Takashi Inoue, et al. "AlGaN/GaN heterojunction FETs for high-power applications." Electronics and Communications in Japan (Part II: Electronics) 86, no. 12 (2003): 52–60. http://dx.doi.org/10.1002/ecjb.10161.

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15

Pantellini, Alessio, Claudio Lanzieri, Antonio Nanni, et al. "GaN-on-Silicon Evaluation for High-Power MMIC Applications." Materials Science Forum 711 (January 2012): 223–27. http://dx.doi.org/10.4028/www.scientific.net/msf.711.223.

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Today microwave market has identified GaN-HEMT technology as a strategic enabling technology for next generation MMICs to be implemented in high performance RF sub-assemblies such as T/R Modules, Solid State Power Transmitters, Compact Receivers, High Speed Communications. To allow commercial market entry of GaN technology, a tradeoff between high RF performance and low cost is mandatory and a possible solution is represented by GaN-on-Silicon substrate. In this scenario the evaluation of FETs RF performance and losses of passive components are demanding to understand the feasibility of GaN MM

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16

Musumeci, Salvatore, Fabio Mandrile, Vincenzo Barba, and Marco Palma. "Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review." Energies 14, no. 19 (2021): 6378. http://dx.doi.org/10.3390/en14196378.

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The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of

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17

Kuan, T. M., S. J. Chang, Y. K. Su, et al. "High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers." Journal of Crystal Growth 272, no. 1-4 (2004): 300–304. http://dx.doi.org/10.1016/j.jcrysgro.2004.08.089.

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18

Qin, Zhen-Wei, Wen-Hsuan Tsai, Wei-Chia Chen, Hao-Hsuan Lo, and Yue-Ming Hsin. "I–V Characteristics of E-mode GaN-based transistors under gate floating." Semiconductor Science and Technology 37, no. 4 (2022): 045002. http://dx.doi.org/10.1088/1361-6641/ac5105.

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Abstract This study investigates the I–V behaviors of various E-mode GaN-based transistors under gate floating and zero gate bias. The p-GaN gate high electron mobility transistor (HEMTs), gate injection transistors, and Cascode GaN FETs have been adopted and compared. The high off-state drain current is observed under gate floating except for Cascode GaN FETs based on the measured I–V characteristics. The off-state drain current of p-GaN gate HEMT is up to 0.8 mA under gate floating at a drain bias of 6 V, which is about 107 times larger than zero gate bias. The devices will induce false-turn

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19

Wang, Jiyao, Ye Li, and Yehui Han. "Integrated Modular Motor Drive Design With GaN Power FETs." IEEE Transactions on Industry Applications 51, no. 4 (2015): 3198–207. http://dx.doi.org/10.1109/tia.2015.2413380.

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20

Ando, Yuji, and Hidedmasa Takahashi. "Reliability of AlGaN/GaN Heterostructure FETs on Si Substrates." IEEJ Transactions on Electronics, Information and Systems 136, no. 4 (2016): 449–54. http://dx.doi.org/10.1541/ieejeiss.136.449.

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21

Raffo, Antonio, Gianni Bosi, Valeria Vadala, and Giorgio Vannini. "Behavioral Modeling of GaN FETs: A Load-Line Approach." IEEE Transactions on Microwave Theory and Techniques 62, no. 1 (2014): 73–82. http://dx.doi.org/10.1109/tmtt.2013.2291710.

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22

Twieg, Michael, Michael A. de Rooij, and Mark A. Griswold. "Active Detuning of MRI Receive Coils with GaN FETs." IEEE Transactions on Microwave Theory and Techniques 63, no. 12 (2015): 4169–77. http://dx.doi.org/10.1109/tmtt.2015.2495366.

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23

Kuzuhara, M., H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto, and T. Nakayama. "High-voltage rf operation of AlGaN/GaN heterojunction FETs." physica status solidi (a) 200, no. 1 (2003): 161–67. http://dx.doi.org/10.1002/pssa.200303252.

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24

Xiao, D., D. Schreurs, C. Van Niekerk, et al. "Wide-band hybrid power amplifier design using GaN FETs." International Journal of RF and Microwave Computer-Aided Engineering 18, no. 6 (2008): 536–42. http://dx.doi.org/10.1002/mmce.20329.

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25

Jang, Paul, Sang-Woo Kang, Bo-Hyung Cho, Jin-Han Kim, Han-Sol Seo, and Hyun-Soo Park. "Totem-pole Bridgeless Boost PFC Converter Based on GaN FETs." Transactions of the Korean Institute of Power Electronics 20, no. 3 (2015): 214–22. http://dx.doi.org/10.6113/tkpe.2015.20.3.214.

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26

Kim, Tae-Kue. "A Study on Improving Switching Characteristics According to a Circuit Analysis Technique in Converter Applications Using Gallium Nitride Field Effect Transistors." Energies 12, no. 17 (2019): 3280. http://dx.doi.org/10.3390/en12173280.

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In this paper, we studied how the switching characteristics of a power conversion system could be improved using gallium nitride (GaN) devices. To this end, a circuit system applying GaN field effect transistors (FETs) was modeled to derive a mathematical differential equation, and the transfer function of the system was obtained through the modeled equation to propose the analysis model. The frequency response of the system where the GaN FET device was applied was analyzed through the proposed modeling circuit, and the method to compensate for characteristics of the system was proposed. The a

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27

Barba, Vincenzo, Salvatore Musumeci, Fausto Stella, Fabio Mandrile, and Marco Palma. "Investigation of Dead Time Losses in Inverter Switching Leg Operation: GaN FET vs. MOSFET Comparison." Energies 17, no. 15 (2024): 3855. http://dx.doi.org/10.3390/en17153855.

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This paper investigates the commutation transients of MOSFET and GaN FET devices in motor drive applications during hard-switching and soft-switching commutations at dead time operation. This study compares the switching behaviors of MOSFETs and GaN FETs, focusing on their performance during dead time in inverter legs for voltage source inverters. Experimental tests at various phase current levels reveal distinct switching characteristics and energy dissipation patterns. A validated simulation model estimates the experimental energy exchanged and dissipated during switching transients. The res

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28

Jeng, Shyr-Long, Chih-Chiang Wu, and Wei-Hua Chieng. "Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting." Journal of Nanomaterials 2015 (2015): 1–15. http://dx.doi.org/10.1155/2015/478375.

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This study examined the output electrical characteristics—current-voltage (I-V) output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equi

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29

Ohno, Y., and M. Kuzuhara. "Application of GaN-based heterojunction FETs for advanced wireless communication." IEEE Transactions on Electron Devices 48, no. 3 (2001): 517–23. http://dx.doi.org/10.1109/16.906445.

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30

Daumiller, I., C. Kirchner, M. Kamp, K. J. Ebeling, and E. Kohn. "Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs." IEEE Electron Device Letters 20, no. 9 (1999): 448–50. http://dx.doi.org/10.1109/55.784448.

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31

Santarelli, Alberto, Rafael Cignani, Daniel Niessen, Pier Andrea Traverso, and Fabio Filicori. "New pulsed measurement setup for GaN and GaAs FETs characterization." International Journal of Microwave and Wireless Technologies 4, no. 3 (2012): 387–97. http://dx.doi.org/10.1017/s1759078712000335.

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A new setup is proposed for the measurement of current–voltage pulsed characteristics of electron devices. The main advantages of the system consist in: shorter pulse widths through generation in a 50-Ω environment, simple average current monitoring through separation of the direct and alternate current paths, setting of average voltage values independently of pulse amplitudes and duty cycle, and stability of the setup guaranteed by wide-band dissipative terminations. The system is used for the characterization of dispersive effects due to carrier energy traps and thermal phenomena in GaAs and

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32

Inoue, Takashi, Tatsuo Nakayama, Yuji Ando, et al. "Polarization Engineering on Buffer Layer in GaN-Based Heterojunction FETs." IEEE Transactions on Electron Devices 55, no. 2 (2008): 483–88. http://dx.doi.org/10.1109/ted.2007.912367.

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33

Miyamoto, H. "Performance of AlGaN/GaN heterojunction FETs for microwave power applications." physica status solidi (c) 3, no. 6 (2006): 2254–60. http://dx.doi.org/10.1002/pssc.200565285.

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34

Glaser, John. "How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs." IEEE Power Electronics Magazine 4, no. 1 (2017): 25–35. http://dx.doi.org/10.1109/mpel.2016.2643099.

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35

Benkhelifa, F., S. Muller, V. M. Polyakov, and O. Ambacher. "Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs With a Thick Undoped GaN Gate Layer." IEEE Electron Device Letters 36, no. 9 (2015): 905–7. http://dx.doi.org/10.1109/led.2015.2459597.

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36

Makris, Nikolaos, Konstantinos Zekentes, and Matthias Bucher. "Compact Modeling of SiC and GaN Junction FETs at High Temperature." Materials Science Forum 963 (July 2019): 683–87. http://dx.doi.org/10.4028/www.scientific.net/msf.963.683.

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High temperatures and other harsh environments are domains of predilection for Junction FETs, particularly when wide band-gap semiconductors such as SiC or GaN are used. The present work describes the new compact model of double gate (DG) JFETs which is compared to TCAD simulations of SiC and GaN JFETs over a wide temperature range up to 500oC. The compact model is shown to be predictive of device behavior, for static (current-voltage) as well as dynamic (capacitance-voltage) behavior of long-channel DG JFETs.

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37

Chow, T. Paul. "SiC and GaN MOS Interfaces – Similarities and Differences." Materials Science Forum 645-648 (April 2010): 473–78. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.473.

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We have comparatively characterized the electrical characteristics of 4H-SiC and 2H-GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field-effect mobility for 4H-SiC MOSFETs, we have recently reported more superior MOS parameters for 2H-GaN MOSFETs. In addition, we have performed MOS-gated Hall measurements to extract the intrinsic carrier concentration and MOS mobility, indicating that both less channel electron trapping and scattering take place in

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38

Hua, Mengyuan, Xiangbin Cai, Song Yang, et al. "Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride." ACS Applied Electronic Materials 1, no. 5 (2019): 642–48. http://dx.doi.org/10.1021/acsaelm.8b00102.

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39

Kim, Zin-Sig, Hyung Seok Lee, Sung-Bum Bae, Eun Soo Nam, and Jong-Won Lim. "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures." Journal of Nanoscience and Nanotechnology 20, no. 7 (2020): 4170–75. http://dx.doi.org/10.1166/jnn.2020.17783.

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Fabrication of normally-off field effect transistors (FETs) possessed uniform turn-on threshold voltage (Vth) is of special interests. In this work, they were fabricated using dry etching recess techniques under the gate region, with dry etching conditions of extremely low rate. We report how the recess depth under the gate area induced the Vth shift of normally-off FETs on AlGaN/GaN heterostructure, which were fabricated with a 1.5 nm/min etching rate. Chlorine-based inductively coupled plasma (ICP) was applied to perform the etching process for the AlGaN/GaN heterostructure. Devices were fab

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40

Harris, John, David Huitink, and Dan Ewing. "Package Design and Analysis for Vertical Gallium Nitride Field Effect Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2021, HiTEC (2021): 000058–63. http://dx.doi.org/10.4071/2380-4491.2021.hitec.000058.

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Abstract Gallium nitride (GaN) is a wide band gap semi-conductor with superior electron mobility to silicon carbide. These properties allow for the design of high temperature capable devices with excellent on resistance and breakdown voltage for their size. However, bulk GaN is difficult to fabricate and doping for field effect transistor (FET) control has been elusive, so vertical GaN devices are not commonplace. This paper measures the characteristics of vertical GaN FETs in the development stage and discusses packaging them for fabrication feedback and for future high temperature aplication

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41

Miyamoto, Hironobu. "Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power Applications." Materials Science Forum 389-393 (April 2002): 1505–10. http://dx.doi.org/10.4028/www.scientific.net/msf.389-393.1505.

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42

Hontz, Michael R., Rongming Chu, and Raghav Khanna. "Effect of Substrate Choice on Transient Performance of Lateral GaN FETs." IEEE Journal of the Electron Devices Society 8 (2020): 331–35. http://dx.doi.org/10.1109/jeds.2020.2981607.

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43

Kuzuhara, M., and H. Tokuda. "AlGaN/GaN Heterojunction FETs for High-Breakdown and Low-Leakage Operation." ECS Transactions 50, no. 3 (2013): 139–42. http://dx.doi.org/10.1149/05003.0139ecst.

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44

Giuliani, F., N. Delmonte, P. Cova, and R. Menozzi. "Temperature-dependent reverse-bias stress of normally-off GaN power FETs." Microelectronics Reliability 53, no. 9-11 (2013): 1486–90. http://dx.doi.org/10.1016/j.microrel.2013.07.068.

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45

Takayanagi, H., H. Nakano, K. Yonemoto, and K. Horio. "Simulation of slow current transients and current collapse in GaN FETs." Journal of Computational Electronics 5, no. 2-3 (2006): 223–27. http://dx.doi.org/10.1007/s10825-006-8848-8.

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46

Mehari, Shlomo, Yonatan Calahorra, Arkady Gavrilov, Moshe Eizenberg, and Dan Ritter. "Role of Transport During Transient Phenomena in AlGaN/GaN Heterostructure FETs." IEEE Electron Device Letters 36, no. 11 (2015): 1124–27. http://dx.doi.org/10.1109/led.2015.2476959.

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47

Qi, Meng, Guowang Li, Satyaki Ganguly, et al. "Strained GaN quantum-well FETs on single crystal bulk AlN substrates." Applied Physics Letters 110, no. 6 (2017): 063501. http://dx.doi.org/10.1063/1.4975702.

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48

Loo-Yau, J. R., I. Tapia-Sánchez, and P. Moreno. "An alternative method to extract the parasitic capacitances of GaN FETs." Microwave and Optical Technology Letters 57, no. 1 (2014): 223–25. http://dx.doi.org/10.1002/mop.28816.

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49

Horio, K., H. Takayanagi, and H. Nakano. "Analysis of buffer-trapping effects on current collapse of GaN FETs." physica status solidi (c) 3, no. 6 (2006): 2346–49. http://dx.doi.org/10.1002/pssc.200565108.

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50

Dietrich, R., A. Vescan, A. Wieszt, et al. "Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs." physica status solidi (a) 176, no. 1 (1999): 209–12. http://dx.doi.org/10.1002/(sici)1521-396x(199911)176:1<209::aid-pssa209>3.0.co;2-q.

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