Relevant bibliographies by topics / GaN HEMT

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  3. Books
  4. Book chapters
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Academic literature on the topic 'GaN HEMT'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 June 2024

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Journal articles on the topic "GaN HEMT"

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del Alamo, J. A., and J. Joh. "GaN HEMT reliability." Microelectronics Reliability 49, no. 9-11 (September 2009): 1200–1206. http://dx.doi.org/10.1016/j.microrel.2009.07.003.

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Filippov, I. A., V. A. Shakhnov, L. E. Velikovskiy, P. A. Brudnyi, and O. I. Demchenko. "InAlN/GaN hemt plasma etching." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 1 (2020): 84–87. http://dx.doi.org/10.17223/00213411/63/1/84.

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Guo, Han, Wu Tang, Wei Zhou, and Chi Ming Li. "Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT." Applied Mechanics and Materials 217-219 (November 2012): 2393–96. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.2393.

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The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.
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Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (February 1, 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.
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CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.

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High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,000 hours, degrading only by 0.35dB in output power. Such results clearly demonstrate the feasibility of GaN - on - GaN HEMT as an alternative device technology to the GaN - on - SiC HEMT in supporting reliable, high performance microwave power applications.
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Fatma M. Mahmoud. "GaN-HEMT Performance Enhancement." Journal of Electrical Systems 20, no. 2 (April 4, 2024): 1426–35. http://dx.doi.org/10.52783/jes.1442.

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In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented. Device simulations have been done using Sentaurus technology computer-aided design (TCAD). The simulations and analysis show better drain current, transconductance, and cut-off frequency performance. The maximum cut-off frequency shown by the proposed HEMT device is 45.7 GHz at 100-nm gate length. Good transcoductance has been obtained by scaling down the gate length of the device, which is ascribed to the present two-dimensional electron gas (2DEG) density that supports upgrading the output current. Higher drain current is achieved without using acceptor-like traps in the Al2O3/AlGaN interface. Results show that the Al2O3/AlGaN/GaN-based MOSHEMT is a promising device for high-frequency and power electronic applications.
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Wang, Kaihong, Yidi Zhu, Hao Zhao, Ruixue Zhao, and Binxin Zhu. "Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices." Electronics 13, no. 2 (January 15, 2024): 363. http://dx.doi.org/10.3390/electronics13020363.

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Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of GaN HEMT has become a crucial factor in device reliability. Since the junction temperature monitoring technology for GaN HEMT based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage, the TSEPs’ characteristics of GaN HEMT have not been definitively established. In this paper, for the common steady-state TSEPs of GaN HEMT, the variation rules of the saturation voltage with low current injection, threshold voltage, and body-like diode voltage drop with temperature are investigated. The influences on the three TSEPs’ characteristics are considered, and their stability is discussed. Through experimental comparison, it is found that the saturation voltage with low current injection retains favorable temperature-sensitive characteristics, which has potential application value in junction temperature measurement. However, the threshold voltage as a TSEP for certain GaN HEMT is not ideal in terms of linearity and stability.
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Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, and Chun-Hsiung Lin. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (February 23, 2023): 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the “thermal cross-talk” effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.
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Jang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, and Hyun-Seok Kim. "Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study." Micromachines 11, no. 1 (December 31, 2019): 53. http://dx.doi.org/10.3390/mi11010053.

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In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.
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Guminov, Nikolay V., Min Thant Myo, V. A. Romanyuk, and Daler P. Shomakhmadov. "Comparison of GaAs and GaN HEMT Characteristics." Proceedings of Universities. Electronics 24, no. 1 (February 2019): 42–50. http://dx.doi.org/10.24151/1561-5405-2019-24-1-42-50.

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Dissertations / Theses on the topic "GaN HEMT"

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Khalil, Ibrahim. "Intermodulation distortion in GaN HEMT." Göttingen Cuvillier, 2009. http://d-nb.info/1000063275/04.

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Aroshvili, Giorgi. "GaN HEMT and MMIC Design and Evaluation." Thesis, University of Gävle, Department of Technology and Built Environment, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-3085.

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Gallium Nitride based devices due to their inherent material properties are considered as one of the most promising devices to realize high power, high frequency transistors with lower power consumption in next-generation applications. Although the technology has been studied since early 1970s, there is still a vast room and expectations in its yet unachieved findings. In present work the GaN technology is explored and state-of-the-art studies of GaN based HEMTs and their application in MMICs are presented. Different designs are presented and evaluated and the results are reported. In particular the HEMT performance is studied in terms of DC in addition to large signal conditions, where the device’s performance becomes function of power levels it is driven with. The peculiarities and challenges of building an automated Load-Pull setup are outlined and analysis for further improvements is presented.

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Astre, Guilhem. "Fiabilité des dispositifs HEMT en technologie GaN." Phd thesis, Toulouse 3, 2012. http://thesesups.ups-tlse.fr/1980/.

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Le point sensible inhérent à la commercialisation d'une technologie émergente est la maturité des processus utilisés garantissant la qualité de l'épitaxie, de la métallisation du contact de grille ou encore de la passivation. Les études de fiabilité s'imposent alors comme un aspect indissociable de la maturation de la technologie. En ce sens, les composants à grands gap représentent un réel problème car les outils classiques de caractérisation ne sont pas toujours adaptés aux contraintes imposées (thermiques, RF, DC. . . ). Dans cette thèse, nous détaillons une technique originale pour améliorer la fiabilité des dispositifs AlGaN/GaN par diffusion de deutérium et nous présentons l'ensemble des résultats issus des campagnes de mesures menées à l'aide des outils disponibles sur des lots de composants issus des filières UMS et TRT. Les principaux résultats concernent les mesures de bruit basse fréquence, la caractérisation électrique, la spectroscopie des pièges profonds et les mesures en température de courant de grille qui ont été réalisés sur des lots de composants témoins et ayant subi différents types de stress
Reliability in GaN based devices still motivates numerous studies because the involved degradation mechanisms are different from that in III-V narrow bandgap devices. Direct investigations on high electron mobility transistors (HEMT) are performed with low frequency noise (LFN) measurements, pulsed electrical characterization and deep level transient spectroscopy. The first part of this thesis deals with generalities on AlGaN/GaN High electron mobility transistors and their technological particularities. The second part deals with the presentation of the diagnostic tools used in this study. A low frequency noise bench developed in LAAS-CNRS allowing measurements from few hertz up to 1 MHz is described, an original method of electrical pulsed characterization has and current deep level spectroscopy bench. In the third part of this study, low frequency noise is used to assess effects of deuterium (H+ ions) in diffusion condition on the robustness of 0. 25 *2*75 µm² gate area AlGaN/GaN high electron mobility transistors (HEMT) grown on Si substrate. H+ Ions are diffused from the above AlGaN/GaN layer through the AlGaN/GaN interface and GaN layer, notably under the gated channel where the defects are located. In the fourth part, undoped AlGaN/GaN devices grown on silicon substrate have been stressed at a junction temperature of 175°C. Gate-lag and drain-lag measurements method have been performed versus different quiescent bias points and under different pulse conditions. This method allows the discrimination of each lag phenomenon as well as the thermal contribution. Thus it is possible to track and model the trapping mechanisms versus bias conditions. This electrical modeling is completed with LFN measurements and deep level transient spectroscopy, which is largely used for reliability investigations
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Astre, Guilhem. "Fiabilité des dispositifs HEMT en technologie GaN." Phd thesis, Université Paul Sabatier - Toulouse III, 2012. http://tel.archives-ouvertes.fr/tel-00767154.

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Le point sensible inhérent à la commercialisation d'une technologie émergente est la maturité des processus utilisés garantissant la qualité de l'épitaxie, de la métallisation du contact de grille ou encore de la passivation. Les études de fiabilité s'imposent alors comme un aspect indissociable de la maturation de la technologie. En ce sens, les composants à grands gap représentent un réel problème car les outils classiques de caractérisation ne sont pas toujours adaptés aux contraintes imposées (thermiques, RF, DC...). Dans cette thèse, nous détaillons une technique originale pour améliorer la fiabilité des dispositifs AlGaN/GaN par diffusion de deutérium et nous présentons l'ensemble des résultats issus des campagnes de mesures menées à l'aide des outils disponibles sur des lots de composants issus des filières UMS et TRT. Les principaux résultats concernent les mesures de bruit basse fréquence, la caractérisation électrique, la spectroscopie des pièges profonds et les mesures en température de courant de grille qui ont été réalisés sur des lots de composants témoins et ayant subi différents types de stress.
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Malik, Adil Mahmood. "Technology and physics of gate recessed GaN AlGaN FETs." [S.l. : s.n.], 2003. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-30157.

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Gonçalves, Cristiano Ferreira. "GaN HEMT transistors characterization for non–linear modelling." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/21677.

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Mestrado em Engenharia Eletrónica e Telecomunicações
Ultimamente, as redes de telecomunicações móveis estão a exigir cada vez maiores taxas de transferência de informação. Com este aumento, embora sejam usados códigos poderosos, também aumenta a largura de banda dos sinais a transmitir, bem como a sua frequência. A maior frequência de operação, bem como a procura por sistemas mais eficientes, tem exigido progressos no que toca aos transístores utilizados nos amplificadores de potência de radio frequência (RF), uma vez que estes são componentes dominantes no rendimento de uma estação base de telecomunicações. Com esta evolução, surgem novas tecnologias de transístores, como os GaN HEMT (do inglês, Gallium Nitride High Electron Mobility Transistor). Para conseguir prever e corrigir certos efeitos dispersivos que afetam estas novas tecnologias e para obter o amplificador mais eficiente para cada transístor usado, os projetistas de amplificadores necessitam cada vez mais de um modelo que reproduza fielmente o comportamento do dispositivo. Durante este trabalho foi desenvolvido um sistema capaz de efetuar medidas pulsadas e de elevada exatidão a transístores, para que estes não sejam afetados, durante as medidas, por fenómenos de sobreaquecimento ou outro tipo de fenómenos dispersivos mais complexos presentes em algumas tecnologias. Desta forma, será possível caracterizar estes transístores para um estado pré determinado não só de temperatura, mas de todos os fenómenos presentes. Ao longo do trabalho vai ser demostrado o projeto e a construção deste sistema, incluindo a parte de potência que será o principal foco do trabalho. Foi assim possível efetuar medidas pulsadas DC-IV e de parâmetros S (do inglês, Scattering) pulsados para vários pontos de polarização. Estas últimas foram conseguidas á custa da realização de um kit de calibração TRL. O interface gráfico com o sistema foi feito em Matlab, o que torna o sistema mais fácil de operar. Com as medidas resultantes pôde ser obtida uma primeira análise acerca da eficiência, ganho e potência máxima entregue pelo dispositivo. Mais tarde, com as mesmas medidas pôde ser obtido um modelo não linear completo do dispositivo, facilitando assim o projeto de amplificadores.
Lately, the wireless networks should feature higher data rates than ever. With this rise, although very powerful codification schemes are used, the bandwidth of the transmitted signals is rising, as well as the frequency. Not only caused by this rise in frequency, but also by the growing need for more efficient systems, major advances have been made in terms of Radio Frequency (RF) Transistors that are used in Power Amplifiers (PAs), which are dominant components in terms of the total efficiency of base stations (BSS). With this evolution, new technologies of transistors are being developed, such as the Gallium Nitride High Electron Mobility Transistor (GaN HEMT). In order to predict and correct some dispersive effects that affect these new technologies and obtain the best possible amplifier for each different transistor, the designers are relying more than ever in the models of the devices. During this work, one system capable of performing very precise pulsed measurements on RF transistors was developed, so that they are not affected, during the measurements, by self-heating or other dispersive phenomena that are present in some technologies. Using these measurements it was possible to characterize these transistors for a pre-determined state of the temperature and all the other phenomena. In this document, the design and assembly of the complete system will be analysed, with special attention to the higher power component. It will be possible to measure pulsed Direct Current Current-Voltage (DC-IV) behaviour and pulsed Scattering (S) parameters of the device for many different bias points. These latter ones were possible due to the development of one TRL calibration kit. The interface with the system is made using a graphical interface designed in Matlab, which makes it easier to use. With the resulting measurements, as a first step analysis, the maximum efficiency, gain and maximum delivered power of the device can be estimated. Later, with the same measurements, the complete non-linear model of the device can be obtained, allowing the designers to produce state-of-art RF PAs.
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Behmenburg, Hannes [Verfasser]. "Comprehensive study on MOVPE of InAlN/GaN HEMT structures and GaN nanowires / Hannes Behmenburg." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2013. http://d-nb.info/1036302067/34.

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Fontserè, Recuenco Abel. "Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization." Doctoral thesis, Universitat Politècnica de Catalunya, 2013. http://hdl.handle.net/10803/129098.

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Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its voltage blocking capability, operation temperature and switching frequency. In this sense, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) devices have the potential to make this change possible. The unique combination of the high-breakdown field, the high-channel electron mobility of the two dimensional electron gas (2DEG), and high-temperature of operation has attracted enormous interest from social, academia and industry and in this context this PhD dissertation has been made. This thesis has focused on improving the device performance through the advanced design, fabrication and characterization of AlGaN/GaN HEMTs, primarily grown on Si templates. The first milestone of this PhD dissertation has been the establishment of a know-how on GaN HEMT technology from several points of view: the device design, the device modeling, the process fabrication and the advanced characterization primarily using devices fabricated at Centre de Recherche sur l'Hétéro-Epitaxie (CRHEA-CNRS) (France) in the framework of a collaborative project. In this project, the main workhorse of this dissertation was the explorative analysis performed on the AlGaN/GaN HEMTs by innovative electrical and physical characterization methods. A relevant objective of this thesis was also to merge the nanotechnology approach with the conventional characterization techniques at the device scale to understand the device performance. A number of physical characterization techniques have been imaginatively used during this PhD determine the main physical parameters of our devices such as the morphology, the composition, the threading dislocations density, the nanoscale conductive pattern and others. The conductive atomic force microscopy (CAFM) tool have been widely described and used to understand the conduction mechanisms through the AlGaN/GaN Ohmic contact by performing simultaneously topography and electrical conductivity measurements. As it occurs with the most of the electronic switches, the gate stack is maybe the critical part of the device in terms of performance and longtime reliability. For this reason, how the AlGaN/GaN HEMT gate contact affects the overall HEMT behaviour by means of advanced characterization and modeling has been intensively investigated. It is worth mentioning that the high-temperature characterization is also a cornerstone of this PhD. It has been reported the elevated temperature impact on the forward and the reverse leakage currents for analogous Schottky gate HEMTs grown on different substrates: Si, sapphire and free-standing GaN (FS-GaN). The HEMT' forward-current temperature coefficients (T^a) as well as the thermal activation energies have been determined in the range of 25-300 ºC. Besides, the impact of the elevated temperature on the Ohmic and gate contacts has also been investigated. The main results of the gold-free AlGaN/GaN HEMTs high-voltage devices fabricated with a 4 inch Si CMOS compatible technology at the clean room of the CNM in the framework of the industrial contract with ON semiconductor were presented. We have shown that the fabricated devices are in the state-of-the-art (gold-free Ohmic and Schottky contacts) taking into account their power device figure-of-merit ((VB^2)/Ron) of 4.05×10^8 W/cm^2. Basically, two different families of AlGaN/GaN-on-Si MIS-HEMTs devices were fabricated on commercial 4 inch wafers: (i) using a thin ALD HfO2 (deposited on the CNM clean room) and (ii) thin in-situ grown Si3N4, as a gate insulator (grown by the vendor). The scientific impact of this PhD in terms of science indicators is of 17 journal papers (8 as first author) and 10 contributions at international conferences.
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Saini, Kanika. "Linearity Enhancement of High Power GaN HEMT Amplifier Circuits." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/94361.

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Gallium Nitride (GaN) technology is capable of very high power levels but suffers from high non-linearity. With the advent of 5G technologies, high linearity is in greater demand due to complex modulation schemes and crowded RF (Radio Frequency) spectrum. Because of the non-linearity issue, GaN power amplifiers have to be operated at back-off input power levels. Operating at back-off reduces the efficiency of the power amplifier along-with the output power. This research presents a technique to linearize GaN amplifiers. The linearity can be improved by splitting a large device into multiple smaller devices and biasing them individually. This leads to the cancellation of the IMD3 (Third-order Intermodulation Distortion) components at the output of the FETs and hence higher linearity performance. This technique has been demonstrated in Silicon technology but has not been previously implemented in GaN. This research work presents for the first time the implementation of this technique in GaN Technology. By the application of this technique, improvement in IMD3 of 4 dBc has been shown for a 0.8-1.0 GHz PA (Power Amplifier), and 9.5 dBm in OIP3 (Third-order Intercept Point) for an S-Band GaN LNA, with linearity FOM (IP3/DC power) reaching up to 20. Large-signal simulation and analysis have been done to demonstrate linearity improvement for two parallel and four parallel FETs. A simulation methodology has been discussed in detail using commercial CAD software. A power sampler element is used to compute the IMD3 currents coming out of various FETs due to various bias currents. Simulation results show by biasing one device in Class AB and others in deep Class AB, IMD3 components of parallel FETs can be made out of phase of each other, leading to cancellation and improvement in linearity. Improvement up to 20 dBc in IMD3 has been reported through large-signal simulation when four parallel FETs with optimum bias were used. This technique has also been demonstrated in simulation for an X-Band MMIC PA from 8-10 GHz in GaN technology. Improvements up to 25-30 dBc were shown using the technique of biasing one device with Class AB and other with deep class AB/class B. The proposed amplifier achieves broadband linearization over the entire frequency compared to state-of-the-art PA's. The linearization technique demonstrated is simple, straight forward, and low cost to implement. No additional circuitry is needed. This technique finds its application in high dynamic range RF amplifier circuits for communications and sensing applications.
Doctor of Philosophy
Power amplifiers (PAs) and Low Noise Amplifiers (LNAs) form the front end of the Radio Frequency (RF) transceiver systems. With the advent of complex modulation schemes, it is becoming imperative to improve their linearity. Through this dissertation, we propose a technique for improving the linearity of amplifier circuits used for communication systems. Meanwhile, Gallium Nitride (GaN) is becoming a technology of choice for high-power amplifier circuits due to its higher power handling capability and higher breakdown voltage compared with Gallium Arsenide (GaAs), Silicon Germanium (SiGe) and Complementary Metal-Oxide-Semiconductor (CMOS) technologies. A circuit design technique of using multiple parallel GaN FETs is presented. In this technique, the multiple parallel FETs have independently controllable gate voltages. Compared to a large single FET, using multiple FETs and biasing them individually helps to improve the linearity through the cancellation of nonlinear distortion components. Experimental results show the highest linearity improvement compared with the other state-of-the-art linearization schemes. The technique demonstrated is the first time implementation in GaN technology. The technique is a simple and cost-effective solution for improving the linearity of the amplifier circuits. Applications include base station amplifiers, mobile handsets, radars, satellite communication, etc.
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Liu, Zhengyang. "Characterization and Failure Mode Analysis of Cascode GaN HEMT." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/49580.

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Recent emerging gallium nitride (GaN) high electron mobility transistor (HEMT) is expected to be a promising candidate for high frequency power conversion techniques. Due to the advantages of the material, the GaN HEMT has a better figure of merit (FOM) compared to the state-of-the-art silicon (Si) power metal oxide silicon field effect transistor (MOSFET), which allows the GaN HEMT to switch with faster transition and lower switching loss. By applying the GaN HEMT in a circuit design, it is possible to achieve high frequency, high efficiency, and high density power conversion at the same time. To characterize the switching performance of the GaN HEMT, an accurate behavior-level simulation model is developed in this thesis. The packaging related parasitic inductance, including both self-inductance and mutual-inductance, are extracted based on finite element analysis (FEA) methods. Then the accuracy of the simulation model is verified by a double-pulse tester, and the simulation results match well with experiment in terms of both device switching waveform and switching energy. Based on the simulation model, detailed loss breakdown and loss mechanism analysis are made. The cascode GaN HEMT has high turn-on loss due to the body diode reverse recovery of the low voltage Si MOSFET and the common source inductance (CSI) of the package; while the turn-off loss is extremely small attributing to the cascode structure. With this unique feature, the critical conduction mode (CRM) soft switching technique are applied to reduce the dominant turn on loss and increase converter efficiency significantly. The switching frequency is successfully pushed to 5MHz while maintaining high efficiency and good thermal performance. Traditional packaging method is becoming a bottle neck to fully utilize the advantages of GaN HEMT. So an investigation of the package influence on the cascode GaN HEMT is also conducted. Several critical parasitic inductors are identified, which cause high turn on loss and high parasitic ringing which may lead to device failure. To solve the issue, the stack-die package is proposed to eliminate all critical parasitic inductors, and as a result, reducing turn on loss by half and avoiding potential failure mode of the cascode GaN device effectively. Utilizing the proposed stack-die package and ZVS soft switching, the GaN HEMT high frequency, high efficiency, and high density power conversion capability can be further extended to a higher level.
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Books on the topic "GaN HEMT"

1

Khandelwal, Sourabh. Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-77730-2.

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Ron, Mooser, ed. Het Huis dat vriendschap heet: Mannelijke homoseksualiteit in de twintigste-eeuwse Nederlandse literatuur. Amsterdam: Manteau, 1985.

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Consultants, Pilkington Glass. Glass and solar heat gain. St. Helens: Pilkingtons Glass Consultants, 1992.

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Josh, Lanyon, ed. Mexican heat. Albion, NY: MLR Press, 2007.

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Boye, Else M. Den gang det het Christiania. 3rd ed. Oslo: Cappelen, 2000.

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Tsiṭer, Ḳeren. Shirim: (she-hem gam sipur). Tel-Aviv: Saʻar, 1996.

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Bourgonje, Fleur. Wat het water gaf: Verhalen. Amsterdam: Meulenhoff, 1989.

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Heeresma, Heere. Sprookjes voor het sterven gaan. Amsterdam: Arena, 1996.

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Kuznecov, Vyacheslav, and Oleg Bryuhanov. Gasified boiler units. ru: INFRA-M Academic Publishing LLC., 2021. http://dx.doi.org/10.12737/1003548.

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The textbook gives the basic concepts of gasified heat generating (boiler) installations and the terminology used in boiler technology, the principle of operation and device of gasified heat generating (boiler) installations. The types and device of heat generators (boilers) of their furnace devices are considered; types and device of gas-burning devices, the number and places of their installation in furnace devices; auxiliary equipment-devices for air supply and removal of combustion products, devices for water treatment, steam supply and circulation of the coolant of hot water boilers; device for thermal control and automatic regulation of the boiler installation. The issues of operation and efficiency of gasified heat generating (boiler) installations and their gas supply systems; requirements for conducting gas-hazardous and emergency recovery operations of gas supply systems are considered. Meets the requirements of the federal state educational standards of secondary vocational education of the latest generation. For students of secondary vocational education in the specialty 08.02.08 "Installation and operation of equipment and gas supply systems".
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Kudinov, Anatoliy, Svetlana Ziganshina, and Kirill Husainov. Calculation of thermal schemes of combined-cycle gas installations of thermal power plants. ru: INFRA-M Academic Publishing LLC., 2023. http://dx.doi.org/10.12737/1865669.

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The fundamentals of the theory of increasing the thermal efficiency of power plants through the use of gas turbine and combined-cycle technologies are presented. The classification is given, the basic and calculated thermal schemes, parameters and characteristics of gas turbine and combined-cycle gas installations of various types are given, the principles of their operation are described. The designs of combustion chambers and features of fuel combustion in the combustion chambers of gas turbine installations are given. Methods and examples of calculation of thermal schemes of gas turbine installations with heat recovery boilers and combined-cycle thermal power plants are presented. Meets the requirements of the federal state educational standards of higher education of the latest generation. For students of energy specialties of universities and faculties studying in the areas of training "Heat power engineering and heat engineering", "Power engineering", as well as for graduate students of universities and engineering and technical workers of power plants.
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Book chapters on the topic "GaN HEMT"

1

Johnson, Wayne, and Edwin L. Piner. "GaN HEMT Technology." In Springer Series in Materials Science, 209–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23521-4_7.

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Suh, Chang Soo. "Lateral GaN HEMT Structures." In Integrated Circuits and Systems, 29–49. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2_2.

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Rao, G. Purnachandra, Rajan Singh, and Trupti Ranjan Lenka. "Operation Principle of AlGaN/GaN HEMT." In HEMT Technology and Applications, 105–14. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_8.

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Khandelwal, Sourabh. "Effect of Ambient Temperature on GaN Device." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT), 115–24. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_9.

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Sharma, N., S. Dhakad, K. Singh, N. Chaturvedi, A. Chauhan, C. Periasamy, and N. Chaturvedi. "AlGaN/GaN HEMT Based pH Sensor." In Springer Proceedings in Physics, 897–99. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_134.

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Khandelwal, Sourabh. "Parameter Extraction in ASM-HEMT Model." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT), 131–50. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_11.

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Khandelwal, Sourabh. "Core Formulations in ASM-HEMT Model." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT), 33–45. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_4.

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Khandelwal, Sourabh. "Resources for ASM-HEMT Model Users." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT), 175. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_13.

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Khandelwal, Sourabh. "Introduction to ASM-HEMT Compact Model." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT), 21–31. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_3.

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Khandelwal, Sourabh. "Advance Simulations with ASM-HEMT Model." In Advanced SPICE Model for GaN HEMTs (ASM-HEMT), 153–74. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77730-2_12.

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Conference papers on the topic "GaN HEMT"

1

Padmanabhan, Balaji, Dragica Vasileska, and Stephen M. Goodnick. "Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT." In 2012 15th International Workshop on Computational Electronics (IWCE). IEEE, 2012. http://dx.doi.org/10.1109/iwce.2012.6242851.

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Dasgupta, Avirup, Sudip Ghosh, Yogesh Singh Chauhan, and Sourabh Khandelwal. "ASM-HEMT: Compact model for GaN HEMTs." In 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2015. http://dx.doi.org/10.1109/edssc.2015.7285159.

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CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." In High Performance Devices - 2004 IEEE Lester Eastman Conference. Singapore: World Scientific Publishing Co. Pte. Ltd., 2005. http://dx.doi.org/10.1142/9789812702036_0019.

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Sommet, R., J. A. Silva Dos Santos, A. Santos, and J. C. Nallatamby. "High frequency GaN HEMT Modeling with ASM-HEMT." In 2022 17th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2022. http://dx.doi.org/10.23919/eumic54520.2022.9923430.

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Padmanabhan, Balaji, Dragica Vasileska, and Stephen M. Goodnick. "Modeling reliability of GaN/AlGaN/AlN/GaN HEMT." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135165.

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Satoh, Tomio, Ken Osawa, and Atsushi Nitta. "GaN HEMT for Space Applications." In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). IEEE, 2018. http://dx.doi.org/10.1109/bcicts.2018.8551070.

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Jang, Sheng-Lyang, Yung-Han Chang, and Wen-Cheng Lai. "A Feedback GaN HEMT Oscillator." In 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT). IEEE, 2018. http://dx.doi.org/10.1109/icmmt.2018.8563459.

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NEUBURGER, M., T. ZIMMERMANN, E. KOHN, A. DADGAR, F. SCHULZE, A. KRTSCHIL, M. GÜNTHER, et al. "UNSTRAINED InAlN/GaN HEMT STRUCTURE." In High Performance Devices - 2004 IEEE Lester Eastman Conference. Singapore: World Scientific Publishing Co. Pte. Ltd., 2005. http://dx.doi.org/10.1142/9789812702036_0026.

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Lai, Wen-Cheng, Sheng-Lyang Jang, and Yi-Wen Chen. "Dual-Feedback GaN HEMT Oscillator." In 2019 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). IEEE, 2019. http://dx.doi.org/10.1109/rfit.2019.8929124.

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Krasnov, V. V., V. M. Minnebaev, S. V. Minnebaev, and An V. Red'ka. "GaN HEMT study at cryotemperatures." In Global science. Development and novelty. LJournal, 2020. http://dx.doi.org/10.18411/gdsn-25-02-2020-10.

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Reports on the topic "GaN HEMT"

1

Xing, Huili G., and Debdeep Jena. Ultrascaled AIN/GaN HEMT Technology for mm-wave RT Applications. Fort Belvoir, VA: Defense Technical Information Center, February 2011. http://dx.doi.org/10.21236/ada538446.

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Reed, Kyle, Nance Ericson, N. Dianne Ezell, Gavin Long, Siddharth Rajan, Raymond Cao, Adithya Balaji, and Chandan Joishi. GaN HEMT Fabrication for Radiation-Hardened Sensing and Communications Electronics. Office of Scientific and Technical Information (OSTI), July 2022. http://dx.doi.org/10.2172/2205455.

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Tompkins, Randy P., and Danh Nguyen. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada618164.

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Kurtz, Steven Ross, David Martin Follstaedt, Alan Francis Wright, Albert G. Baca, Ronald D. Briggs, Paula Polyak Provencio, Nancy A. Missert, et al. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers. Office of Scientific and Technical Information (OSTI), December 2005. http://dx.doi.org/10.2172/883465.

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Ericson, Nance, Kyle Reed, N. Dianne Ezell, Chandan Joishi, Lloyd Clonts, Brett Witherspoon, Siddharth Rajan, Raymond Cao, and Adithya Balaji. Radiation-Hardened GaN HEMT and Cell Design, Modeling, and Fabrication for Nuclear Instrumentation Applications. Office of Scientific and Technical Information (OSTI), November 2022. http://dx.doi.org/10.2172/2205450.

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Nochetto, Horacio C., Nicholas R. Jankowski, Brian Morgan, and Avram Bar-Cohen. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. Fort Belvoir, VA: Defense Technical Information Center, October 2012. http://dx.doi.org/10.21236/ada570599.

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Shah, Pankaj B., and Joe X. Qiu. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization. Fort Belvoir, VA: Defense Technical Information Center, December 2011. http://dx.doi.org/10.21236/ada554911.

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Baker, Bryant. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.1780.

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Ambacher, Oliver, Vadim Lebedev, Ute Kaiser, and L. F. Eastman. Pyroelectric A1GaN/GaN HEMTs for ion-, gas- and Polar-Liquid Sensors. Fort Belvoir, VA: Defense Technical Information Center, August 2004. http://dx.doi.org/10.21236/ada467686.

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Barker, Joy, and Randy John Shul. High field effects of GaN HEMTs. Office of Scientific and Technical Information (OSTI), September 2004. http://dx.doi.org/10.2172/919143.

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