Journal articles: 'GaN HEMT'

1

del Alamo, J. A., and J. Joh. "GaN HEMT reliability." Microelectronics Reliability 49, no. 9-11 (September 2009): 1200–1206. http://dx.doi.org/10.1016/j.microrel.2009.07.003.

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Filippov, I. A., V. A. Shakhnov, L. E. Velikovskiy, P. A. Brudnyi, and O. I. Demchenko. "InAlN/GaN hemt plasma etching." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 1 (2020): 84–87. http://dx.doi.org/10.17223/00213411/63/1/84.

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Guo, Han, Wu Tang, Wei Zhou, and Chi Ming Li. "Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT." Applied Mechanics and Materials 217-219 (November 2012): 2393–96. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.2393.

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The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

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Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (February 1, 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

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CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.

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High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,000 hours, degrading only by 0.35dB in output power. Such results clearly demonstrate the feasibility of GaN - on - GaN HEMT as an alternative device technology to the GaN - on - SiC HEMT in supporting reliable, high performance microwave power applications.

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Fatma M. Mahmoud. "GaN-HEMT Performance Enhancement." Journal of Electrical Systems 20, no. 2 (April 4, 2024): 1426–35. http://dx.doi.org/10.52783/jes.1442.

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In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented. Device simulations have been done using Sentaurus technology computer-aided design (TCAD). The simulations and analysis show better drain current, transconductance, and cut-off frequency performance. The maximum cut-off frequency shown by the proposed HEMT device is 45.7 GHz at 100-nm gate length. Good transcoductance has been obtained by scaling down the gate length of the device, which is ascribed to the present two-dimensional electron gas (2DEG) density that supports upgrading the output current. Higher drain current is achieved without using acceptor-like traps in the Al2O3/AlGaN interface. Results show that the Al2O3/AlGaN/GaN-based MOSHEMT is a promising device for high-frequency and power electronic applications.

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Wang, Kaihong, Yidi Zhu, Hao Zhao, Ruixue Zhao, and Binxin Zhu. "Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices." Electronics 13, no. 2 (January 15, 2024): 363. http://dx.doi.org/10.3390/electronics13020363.

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Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of GaN HEMT has become a crucial factor in device reliability. Since the junction temperature monitoring technology for GaN HEMT based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage, the TSEPs’ characteristics of GaN HEMT have not been definitively established. In this paper, for the common steady-state TSEPs of GaN HEMT, the variation rules of the saturation voltage with low current injection, threshold voltage, and body-like diode voltage drop with temperature are investigated. The influences on the three TSEPs’ characteristics are considered, and their stability is discussed. Through experimental comparison, it is found that the saturation voltage with low current injection retains favorable temperature-sensitive characteristics, which has potential application value in junction temperature measurement. However, the threshold voltage as a TSEP for certain GaN HEMT is not ideal in terms of linearity and stability.

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Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, and Chun-Hsiung Lin. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (February 23, 2023): 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the “thermal cross-talk” effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.

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9

Jang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, and Hyun-Seok Kim. "Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study." Micromachines 11, no. 1 (December 31, 2019): 53. http://dx.doi.org/10.3390/mi11010053.

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In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.

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Guminov, Nikolay V., Min Thant Myo, V. A. Romanyuk, and Daler P. Shomakhmadov. "Comparison of GaAs and GaN HEMT Characteristics." Proceedings of Universities. Electronics 24, no. 1 (February 2019): 42–50. http://dx.doi.org/10.24151/1561-5405-2019-24-1-42-50.

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11

Zhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu, and Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate." Materials Science Forum 1014 (November 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.

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With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications. The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode). In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described. The research status and problems of E-mode AlGaN/GaN HEMT devices fabricated by p-GaN gate technology are summarized. The advances of p-GaN gate technology, and focuses on how these research results can improve the power characteristics and reliability of E-mode AlGaN/GaN HEMT by optimizing device structure and improving process technology, are discussed.

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12

Zhou, Jian Jun, Liang Li, Hai Yan Lu, Ceng Kong, Yue Chan Kong, and Tang Sheng Chen. "High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate." Applied Mechanics and Materials 347-350 (August 2013): 1535–39. http://dx.doi.org/10.4028/www.scientific.net/amm.347-350.1535.

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In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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13

Guan, Wuxiao. "Advancements and trends in GaN HEMT." Applied and Computational Engineering 23, no. 1 (November 7, 2023): 245–51. http://dx.doi.org/10.54254/2755-2721/23/20230662.

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Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) technology has made significant advancements, revolutionizing the field of power electronics. With their unique properties such as high breakdown voltage, high frequency, and high electron mobility and high-power capabilities, GaN HEMTs offer significant advantages over traditional silicon-based devices, such as improved power density, higher operating temperature, and enhanced reliability. GaN HEMTs have shown great potential in sensing applications, such as gas and biosensors. This thesis explores the advancements and trends in GaN HEMT technology, including crystal growth technology, sensing applications, packaging technology, and performance optimization. Despite significant progress, challenges such as heat dissipation, production costs, and yield and reliability issues need to be addressed. Future research directions may focus on improving integration with other technologies, exploring potential applications in emerging fields such as 5G communication, and addressing these challenges. Overall, GaN HEMT technology has made significant advancements and is set to play a pivotal role in various industries.

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14

Alur, Siddharth, Tony Jefferson Gnanaprakasa, Yaqi Wang, Yogesh Sharma, Jing Dai, Jong Hong, Aleksandr L. Simonian, Michael Bozack, Claude Ahyi, and Minseo Park. "AlGaN/GaN HEMT Based Biosensor." ECS Transactions 28, no. 4 (December 17, 2019): 61–64. http://dx.doi.org/10.1149/1.3377100.

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15

Ma, Yunwei, Ming Xiao, Zhonghao Du, Xiaodong Yan, Kai Cheng, Michael Clavel, Mantu K. Hudait, Ivan Kravchenko, Han Wang, and Yuhao Zhang. "Tri-gate GaN junction HEMT." Applied Physics Letters 117, no. 14 (October 5, 2020): 143506. http://dx.doi.org/10.1063/5.0025351.

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16

NEUBURGER, M., T. ZIMMERMANN, E. KOHN, A. DADGAR, F. SCHULZE, A. KRTSCHIL, M. GÜNTHER, et al. "UNSTRAINED InAlN/GaN HEMT STRUCTURE." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 785–90. http://dx.doi.org/10.1142/s0129156404002831.

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InAlN has been investigated as barrier layer material for GaN -HEMT structures, potentially offering higher sheet charge densities [1] and higher breakdown fields [2]. Lattice matched growth of the barrier layer can be achieved with 17 % In content, avoiding piezo polarization. In this configuration the sheet charge density is only induced by spontaneous polarization. First experimental results of unpassivated undoped samples realized on 111- Si substrate exceed a DC output current density of 1.8 A/mm for a gate length of 0.5 μm. Small signal measurements yield a f t = 26 GHz and f max = 14 GHz , still limited by the residual conductivity of the Si -substrate. A saturated output power at 2 GHz in class A bias point yielded a density of 4.1 W/mm at V DS = 24 V .

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Mojab, Alireza, Zahra Hemmat, Hossein Riazmontazer, and Arash Rahnamaee. "Introducing Optical Cascode GaN HEMT." IEEE Transactions on Electron Devices 64, no. 3 (March 2017): 796–804. http://dx.doi.org/10.1109/ted.2017.2657498.

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18

Chen, Chi, Yue Hao, Ling Yang, Si Quan, Xiaohua Ma, and Jincheng Zhang. "Nonlinear characterization of GaN HEMT." Journal of Semiconductors 31, no. 11 (November 2010): 114004. http://dx.doi.org/10.1088/1674-4926/31/11/114004.

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Si, Quan, Hao Yue, Ma Xiaohua, Zheng Pengtian, and Xie Yuanbin. "AlGaN/GaN double-channel HEMT." Journal of Semiconductors 31, no. 4 (April 2010): 044003. http://dx.doi.org/10.1088/1674-4926/31/4/044003.

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20

Alomari, M., M. Dipalo, S. Rossi, M. A. Diforte-Poisson, S. Delage, J. F. Carlin, N. Grandjean, et al. "Diamond overgrown InAlN/GaN HEMT." Diamond and Related Materials 20, no. 4 (April 2011): 604–8. http://dx.doi.org/10.1016/j.diamond.2011.01.006.

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21

Chen, Chia Lin, Chih Huan Fang, Yuan Chao Niu, and Yaow Ming Chen. "Impact of Parasitic Capacitor to the GaN HEMT Devices." Applied Mechanics and Materials 764-765 (May 2015): 515–20. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.515.

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The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching frequency operation, the parasitic inductor has caught a lot of attention when the GaN HEMT is applied in the high power applications. However, the impact of parasitic capacitor to the GaN HEMT is not discussed in literatures. A prototype circuit is built and tested to evaluate the impacts of parasitic capacitor to the GaN HEMT performance. The results show that the parasitic capacitor can induce voltage spike and damage the GaN HEMT.

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Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, and Feng-Tso Chien. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (September 23, 2021): 727. http://dx.doi.org/10.3390/membranes11100727.

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A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability.

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23

Chen, Kevin J., and Chunhua Zhou. "Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology." physica status solidi (a) 208, no. 2 (October 18, 2010): 434–38. http://dx.doi.org/10.1002/pssa.201000631.

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24

Liang, Yanan, Rui Chen, Jianwei Han, Xuan Wang, Qian Chen, and Han Yang. "The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure." Electronics 10, no. 4 (February 10, 2021): 440. http://dx.doi.org/10.3390/electronics10040440.

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An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

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Matsuura, Haruka, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, and Liwen Sang. "MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template." Applied Sciences 9, no. 9 (April 27, 2019): 1746. http://dx.doi.org/10.3390/app9091746.

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The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron mobility transistor (HEMT) templates to pursue the complementary p-channel conductivity to realize the monolithic integrated circuits. As the initial step, the epitaxial growth is optimized and the structure properties are investigated by comparing with the InGaN/GaN heterojunctions grown on GaN/sapphire templates. It is found that both the In composition and relaxation degree are higher for the InGaN/GaN on the HEMT template than that on the sapphire substrate. The crystalline quality is deteriorated for the InGaN grown on the HEMT template, which is attributed to the poor-quality GaN channel in the HEMT template. Further analysis indicates that the higher In incorporation in the InGaN layer on the HEMT template may be caused by the higher relaxation degree due to the compositional pulling effect. An increase in the growth temperature by 20 °C with optimized growth condition improves the crystalline quality of the InGaN, which is comparable to that on GaN/sapphire even if it is grown on a poor-quality GaN channel.

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Afonin, A. G., V. N. Brudnyi, P. A. Brudnyi, and L. E. Velikovskiy. "Features of radiation disorders in InAlN/GaN HEMT." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 9 (2019): 106–12. http://dx.doi.org/10.17223/00213411/62/9/106.

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S, Muthukumar, and John Wiselin M.C. "Class C Power Amplifier Using GaN Hemt Transistor." Journal of Advanced Research in Dynamical and Control Systems 11, no. 0009-SPECIAL ISSUE (September 25, 2019): 653–60. http://dx.doi.org/10.5373/jardcs/v11/20192618.

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Gusev, M. E. "MICROWAVE GAN HEMT THERMAL FIELD MONITORING." Electronic Enginering.Semiconductor Devices 252, no. 1 (2019): 24–29. http://dx.doi.org/10.36845/2073-8250-2019-252-1-24-29.

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Малин, Т. В., Д. С. Милахин, И. А. Александров, В. Е. Земляков, В. И. Егоркин, А. А. Зайцев, Д. Ю. Протасов, et al. "Нелегированный высокоомный буферный слой GaN для HEMT AlGaN/GaN." Письма в журнал технической физики 45, no. 15 (2019): 21. http://dx.doi.org/10.21883/pjtf.2019.15.48081.17844.

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In this paper the possibility of obtaining the intentionally undoped high resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors by ammonia molecular beam epitaxy was demonstrated. The growth conditions based on background impurity concentrations and point defects calculations for different gallium and ammonia flows ratios were optimized.

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Kruszewski, P., P. Prystawko, I. Kasalynas, A. Nowakowska-Siwinska, M. Krysko, J. Plesiewicz, J. Smalc-Koziorowska, et al. "AlGaN/GaN HEMT structures on ammono bulk GaN substrate." Semiconductor Science and Technology 29, no. 7 (April 17, 2014): 075004. http://dx.doi.org/10.1088/0268-1242/29/7/075004.

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31

Wu, Chih-Chiang, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, and Arnab Sarkar. "Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter." Energies 14, no. 18 (September 20, 2021): 5966. http://dx.doi.org/10.3390/en14185966.

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The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns. This is because of the possibility of the gate to source voltage of the GaN HEMT surging to a negative voltage during the turn off transition. The existing solutions for this problem in the literature produce additional drawbacks such as reducing the switching frequency or introducing many additional components. These drawbacks may outweigh the advantages of using a GaN HEMT over its silicon (Si) alternative. This paper proposes two innovative gate drive circuits for D-mode GaN HEMTs—namely the GaN-switching based cascode GaN HEMT and the modified GaN-switching based cascode GaN HEMT. In these schemes, the Si MOSFET in series with the D-mode GaN HEMT is always turned on during regular operation. The GaN HEMT is then switched on and off by using a charge pump based circuit and a conventional gate driver. Since the GaN HEMT is driven independently, the highly negative gate-to-source voltage surge during turn off is avoided, and in addition, high switching frequency operation is made possible. Only two diodes and one capacitor are used in each of the schemes. The application of the proposed circuits is experimentally demonstrated in a high voltage flyback converter, where more than 96% efficiency is obtained for 60 W output load.

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Ding, Xiaoyu, Xu Yuan, Tao Ju, Guohao Yu, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Baoshun Zhang, and Xinping Zhang. "p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT." Electronics 12, no. 6 (March 16, 2023): 1424. http://dx.doi.org/10.3390/electronics12061424.

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A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) ion implantation was used, for the first time, to passivate p-GaN, except for the gate area, in order to create a normally off p-GaN/AlGaN/GaN high-electron-mobility transistor (HEMT). Ion implantation passivation reduces H ion diffusion in p-GaN, allowing it to withstand temperatures above 350 °C. Through experiments and analyses, the H ion implantation energy and dosage required to passivate p-GaN, by generating Mg-H neutral complexes, were determined to be 20 keV and 1.5 × 1013 cm−2, respectively. After conducting annealing procedures at various temperatures, we discovered that 400 °C was the ideal temperature to effectively obtain a normally off p-GaN HEMT. A threshold voltage of 0.8 V was achievable. The p-GaN HEMT also had a breakdown voltage of 642 V at a gate voltage of 0 V, maximum transconductance of 57.7 mS/mm, an on/off current ratio of 108, an on-resistance of 8.4 mm, and a maximum drain current of 240.0 mA/mm at a gate voltage of 6 V after being annealed at 400 °C.

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Тарасова, E. A., C. B. Оболенский, O. E. Галкин, A. B. Хананова, and А. Б. Макаров. "Анализ параметров GaN-HEMT до и после гамма-нейтронного воздействия." Физика и техника полупроводников 51, no. 11 (2017): 1543. http://dx.doi.org/10.21883/ftp.2017.11.45108.22.

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Предложен метод математической обработки результатов измерений вольт-фарадных характеристик HEMT AlGaN/GaN до и после gamma-нейтронного облучения с флюенсом 0.4·1014 cм-2. Описаны результаты физико-топологического моделирования HEMT AlGaN/GaN на подложке SiC. Определена погрешность расчета параметров GaN-HEMT, обусловленная погрешностью вычисления профиля распределения электронов. DOI: 10.21883/FTP.2017.11.45108.22

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YU Ning, 于宁, 王红航 WANG Hong-hang, 刘飞飞 LIU Fei-fei, 杜志娟 DU Zhi-juan, 王岳华 WANG Yue-hua, 宋会会 SONG Hui-hui, 朱彦旭 ZHU Yan-xu, and 孙捷 SUN Jie. "Research Progress of GaN HEMT Device Structure." Chinese Journal of Luminescence 36, no. 10 (2015): 1178–87. http://dx.doi.org/10.3788/fgxb20153610.1178.

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Lai, Wen-Cheng, and Sheng-Lyang Jang. "An X-Band GaN HEMT Oscillator with Four-Path Inductors." Applied Computational Electromagnetics Society 35, no. 9 (November 4, 2020): 1059–63. http://dx.doi.org/10.47037/2020.aces.j.350912.

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An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback network with four-path inductors. With the supply voltage of VDD = 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is 124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm2.

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36

Jang, Sheng‐Lyang, Yen‐Jung Su, Ke Jen Lin, and Bing‐Jie Wang. "An 4.7 GHz low‐power cross‐coupled GaN HEMT oscillator." Microwave and Optical Technology Letters 60, no. 10 (September 26, 2018): 2442–47. http://dx.doi.org/10.1002/mop.31376.

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AbstractA GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is designed. The oscillator consists of two HEMT amplifiers with cross‐coupled feedback topology. With the supply voltage of VDD = 0.4 V, the GaN VCO current and power consumption of the oscillator are 6.673 mA and 2.669 mW, respectively. The oscillator can generate differential signal at 4.7 GHz and it also supplies output power − 5.3 dBm. At 1 MHz frequency offset from the carrier the phase noise is −121.77 dBc/Hz. The die area of the GaN HEMT oscillator is 2 × 1 mm2.

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Krasnov, V. V., V. M. Minnebaev, and An V. Redka. "THE RESEARCH OF LOW-NOISE GAN HEMT OF CRYOGENIC TEMPERATURES." National Association of Scientists 3, no. 25(52) (2020): 32–36. http://dx.doi.org/10.31618/nas.2413-5291.2020.3.52.152.

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The article presents the results of a research of the possibility of using discrete devices based on gallium nitride of the centimeter wavelength range for receivers of space systems and as part of ground-based radio astronomy observation systems using cryogenic cooling units.

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XU, HONGTAO, CHRISTOPHER SANABRIA, ALESSANDRO CHINI, YUN WEI, STEN HEIKMAN, STACIA KELLER, UMESH K. MISHRA, and ROBERT A. YORK. "A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 810–15. http://dx.doi.org/10.1142/s0129156404002879.

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Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures will be demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.

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Bottaro, Enrico, Santi Agatino Rizzo, and Nunzio Salerno. "Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review." Energies 15, no. 9 (May 7, 2022): 3415. http://dx.doi.org/10.3390/en15093415.

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Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. At the design stage of a power converter, the proper modelling of the GaN HEMT is essential to benefit from their good features and to account for the limits of the current technology. Circuit models of power MOSFETs have been deeply investigated by academia and industry for a long time. These models are able to emulate the datasheet information, and they are usually provided by device manufacturers as netlists that can be simulated in any kind of SPICE-like software. This paper firstly highlights the similarities and differences between MOSFETs and GaN HEMTs at the datasheet level. According to this analysis, the features of MOSFET circuit models that can be adopted for GaN HEMT modelling are discussed. This task has been accomplished by overviewing the literature on MOSFETs circuit models as well as analysing manufacturers netlists, thus highlighting the models MOSFETs valid or adaptable to GaN HEMTs. The study has revealed show that some models can be adapted for the GaN HEMT devices to emulate static characteristics at room temperature while the MOSFET models of dynamic characteristics can be used for GaN HEMT devices. This study enables the devices modellers to speed up the GaN HEMT modelling thanks to the use of some well-established MOSFET models. In this perspective, some suggestions to develop accurate GaN HEMT models are also provided.

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Yusuf, Yusnizam, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, and Mohd Syamsul. "Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT." Crystals 13, no. 1 (January 3, 2023): 90. http://dx.doi.org/10.3390/cryst13010090.

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This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the first step, the V/III ratio was applied at 1902 and then at 3046 in the second step. The FWHMs of the XRD (002) and (102) peaks of the GaN layer were around 205 arcsec ((002) peak) and 277 arcsec ((102) peak). Moreover, the surface of the GaN layer showed clear evidence of step flows, which resulted in the smooth surface of the layer as well as the overgrown of the AlGaN layer. Subsequently, the AlGaN/GaN heterostructure was fabricated into a lateral HEMT with wide gate-to-drain length (LGD). The device exhibited a clear working HEMT characteristic with high breakdown voltages up to 497 V. In comparison to many reported AlGaN/GaN HEMTs, no AlGaN interlayer was inserted in our AlGaN/GaN heterostructure. By improving the growth conditions for the two-step growth, the performance of AlGaN/GaN HEMTs could be improved further.

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Wang, Hongyue, Yijun Shi, Yajie Xin, Chang Liu, Guoguang Lu, and Yun Huang. "Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs." Micromachines 13, no. 2 (January 25, 2022): 176. http://dx.doi.org/10.3390/mi13020176.

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This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional electron gas (2DEG) channel under the PR p-GaN layer is depleted to withstand the drain bias. Therefore, the channel potential at the drain-side of the p-GaN layer is clamped to improve BV and VTH stability. Compared with the conventional p-GaN HEMT (C-HEMT), simulation results show that the BV is improved by 120%, and the VTH stability induced by high drain bias is increased by 490% for the same on-resistance. In addition, the influence of the PR p-GaN layers’ length, thickness, doping density on BV and VTH stability is analyzed. The proposed device can be a good reference to improve breakdown voltage and threshold voltage stability for short-channel power p-GaN HEMTs.

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Smith, Kurt V., Steve Brierley, Robert McAnulty, Cary Tilas, Dimitry Zarkh, Michael Benedek, Philip Phalon, and Anna Hooven. "GaN HEMT Reliability Through the Decade." ECS Transactions 19, no. 3 (December 18, 2019): 113–21. http://dx.doi.org/10.1149/1.3120692.

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Anderson, Travis J., Andrew D. Koehler, Karl D. Hobart, Marko J. Tadjer, Tatyana I. Feygelson, Jennifer K. Hite, Bradford B. Pate, Francis J. Kub, and Charles R. Eddy. "Nanocrystalline Diamond-Gated AlGaN/GaN HEMT." IEEE Electron Device Letters 34, no. 11 (November 2013): 1382–84. http://dx.doi.org/10.1109/led.2013.2282968.

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Mehandru, R., B. Luo, B. S. Kang, Jihyun Kim, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, and J. I. Chyi. "AlGaN/GaN HEMT based liquid sensors." Solid-State Electronics 48, no. 2 (February 2004): 351–53. http://dx.doi.org/10.1016/s0038-1101(03)00318-6.

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Yakovlev, G., and V. Zubkov. "ECV profiling of GaN HEMT heterostructures." Journal of Physics: Conference Series 1199 (March 2019): 012032. http://dx.doi.org/10.1088/1742-6596/1199/1/012032.

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Boles, T., C. Varmazis, D. Carlson, T. Palacios, G. W. Turner, and R. J. Molnar. "High voltage GaN-on-silicon HEMT." physica status solidi (c) 10, no. 5 (March 27, 2013): 844–48. http://dx.doi.org/10.1002/pssc.201200613.

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Rahimzadeh Khoshroo, L., C. Mauder, W. Zhang, M. Fieger, M. Eickelkamp, Y. Dikme, J. Woitok, et al. "Optimisation of AlInN/GaN HEMT structures." physica status solidi (c) 5, no. 6 (May 2008): 2041–43. http://dx.doi.org/10.1002/pssc.200778739.

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Wei, Jin, Gaofei Tang, Ruiliang Xie, and Kevin J. Chen. "GaN power IC technology on p-GaN gate HEMT platform." Japanese Journal of Applied Physics 59, SG (February 4, 2020): SG0801. http://dx.doi.org/10.7567/1347-4065/ab5b63.

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Hamid, Mohamad Hasnan Abdull, Rahil Izzati Mohd Asri, Mohammad Nuzaihan, Masafumi Inaba, Zainuriah Hassan, Hiroshi Kawarada, Shaili Falina, and Mohd Syamsul. "Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT." Key Engineering Materials 947 (May 31, 2023): 3–8. http://dx.doi.org/10.4028/p-9qdk55.

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Metal organic chemical vapor deposition (MOCVD) was used to grow AlGaN/GaN HEMT on a sapphire substrate with a 3.0 nm GaN cap and a sample without a GaN cap. High resolution X-ray diffraction (HRXRD) was utilized to investigate the structural characteristics of the materials. The relationship between the electrical properties and two-dimensional electron gas (2DEG) I-V and Hall Effect measurement. The I-V measurement was used to investigate the resistance properties of AlGaN/GaN heterostructures. Hall Effect measurement was used to quantify electron mobility and sheet carrier concentration in both samples. The sample with a 3.0 nm GaN cap exhibited excellent electrical properties with 436.8 Ω/sq sheet resistivity and possessed a high value of sheet carrier concentration 3.46E+14 per cm2.

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Lv, Beibei, Lixing Zhang, and Jiongjiong Mo. "Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side." Electronics 13, no. 3 (February 4, 2024): 653. http://dx.doi.org/10.3390/electronics13030653.

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The InAlN/GaN HEMT has been identified as a promising alternative to conventional AlGaN/GaN HEMT due to its enhanced polarization effect contributing to higher 2DEG in the GaN channel. However, the InAlN barrier usually suffers from high leakage and therefore low breakdown voltage. In this paper, we propose an asymmetrical GaN HEMT structure which is composed of an InAlN barrier at the source side and an AlGaN barrier at the drain side. This novel device combines the advantages of high 2DEG density at the source side and low electrical-field crowding at the drain side. According to the TCAD simulation, the proposed asymmetric device exhibits better drain current and transconductance compared to AlGaN/GaN HEMT, and enhanced breakdown voltage compared to InAlN/GaN HEMT. The current collapse effects have also been evaluated from the process-related point of view. Possible higher interface traps related to the two-step epitaxial growth for the asymmetric structure fabrication will not exacerbate the current collapse and reliability.

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Journal articles on the topic 'GaN HEMT'

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