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Dissertations / Theses on the topic 'GaN Heterostructures'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Nakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices." Kyoto University, 2019. http://hdl.handle.net/2433/244553.

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2

Salomon, Damien. "Croissance, propriétés optiques et intégration d'hétérostructures radiales InGaN/GaN autour de fils auto-assemblés de GaN crûs sur saphir et silicium." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENY052.

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Ce travail est consacré à la réalisation de diodes électroluminescentes visibles à base de fils de GaN crûs sur Si(111) par épitaxie en phase vapeur de précurseurs organo-métalliques. Nous cherchons en particulier à comprendre les mécanismes de croissance des fils de GaN et les propriétés structurales et optiques de puits quantiques InGaN/GaN cœur/coquille déposés autour de ceux-ci. La croissance de fils orientés le long de l'axe -c sur saphir est dans un premier temps détaillée et expliquée. Nous montrons que l'injection de silane pendant la croissance des fils permet de former une couche de

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3

Greco, Giuseppe. "AlGaN/GaN heterostructures for enhancement mode transistors." Doctoral thesis, Università di Catania, 2013. http://hdl.handle.net/10761/1347.

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Today the continuous increase of electric power demand is in our society a global concern. Hence, the reduction of the energy consumption has become the main task of modern power electronics. In this context, wide band semiconductors (WBG), such as gallium nitride (GaN) and related alloys, have outstanding physical properties that can enable to overcome the limitations of Silicon, in terms of operating power, frequency and temperature of the devices. An interesting aspects related to GaN materials is the possibility to grow AlGaN/GaN heterostructures, in which a two dimensional electron gas (2

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4

Liu, Tian-Yu. "Transmission electron microscopy studies of GaN/[gamma]-LiAlO2 [GaN/gamma-LiAlO2] heterostructures." [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=975832999.

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5

Zhang, Xin. "Growth and characterization of GaN/lnGaN nanowire heterostructures." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY107.

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Les nanostructures de nitrures d’éléments III sont considérées comme des candidats prometteurs visant à la réalisation de divers dispositifs innovants. Depuis quelques années, l'intérêt croissant des nano-LEDs basés sur l’InGaN a été relevé dans le domaine de l'éclairage et de l'affichage. Ce travail de thèse porte sur la croissance par épitaxie par jets moléculaires assistée plasma (PA-MBE) et sur la caractérisation d'hétérostructures InGaN/GaN à base de nanofils.Tout d'abord, un modèle de croissance cinétique de nanofils de nitrures d’éléments III a été établi, en vue d'une analyse en profon

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6

Pretorius, Angelika. "Transmission electron microscopy of GaN based, doped semiconductor heterostructures." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=981822002.

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7

Cherns, Peter David. "A transmission electron microscopy study of AlGaN/GaN heterostructures." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597581.

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The use of an A1N interlayer to allow the growth of crack-free AlGaN on a GaN template is investigated. The impact of using an A1N interlayer on the active region of a device is examined by investigating a series of GaN/AlGaN quantum well structures. It is observed by WBDF that the a-type dislocations generated at the A1N interlayer form ‘staircase’ structures in the quantum well stack where all dislocation segments are in edge orientation A model is proposed where misfit dislocation segments at each well interface are formed by climb, in contrast to the dislocation glide at the lowest interfa

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8

Wen, Kai-Hsin. "Study of ohmic contact formation on AlGaN/GaN heterostructures." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-259746.

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It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. In the minimization of the contact resistance, parameters like the recess depth, anneal temperature and design of the metal stack are commonly optimized. In this work, three other approaches have been evaluated. All experiments were performed on AlGaN/GaN heterostructures. The fabricated ohmic contacts were recess etched, metallized with a Ta/Al/Ta stack, and annealed at 550-575◦C.Fir

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9

Song, Junghui. "Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250296506.

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10

Liu, Tian-Yu. "Transmission electron microscopy studies of GaN/gamma-LiAlO 2 heterostructures." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2005. http://dx.doi.org/10.18452/15278.

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Die vorliegende Arbeit beschaeftigt sich mit dem strukturellen Aufbau von (1-100) M-plane GaN, das mit plasmaunterstuetzter Molekularstrahlepitaxie auf gamma-LiAlO2(100) Substraten gewachsen wurde. Die heteroepitaktische Ausrichtung einerseits, sowie die Mikrostruktur und die Erzeugungsmechanismen der Defekte andererseits, wurde mit der Transmissionselektronenemikroskopie (TEM) systematisch untersucht. Das gamma-LiAlO2 Substrat reagiert heftig im Mikroskop unter Bestrahlung mit hochenergetischen Elektronen. Waehrend dieser Strahlenschaedigung verliert das Material seine urspruengliche krist

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11

Paszkiewicz, B., M. Wosko, R. Paszkiewicz, and M. Tlaczala. "Growth and characterization of algan/gan heterostructures for electronic devices and sensors." Thesis, Sumy State University, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20591.

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12

Liang, Yu-Han. "Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/1008.

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Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two

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13

Liu, Rongliang. "Theoretical studies of coherent optic and acoustic phonons in GaN/InGaN heterostructures." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0002408.

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14

Pandey, Saurabh <1987&gt. "Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amsdottorato.unibo.it/5190/1/Pandey_Saurabh_Tesi.pdf.

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III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky d

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15

Pandey, Saurabh <1987&gt. "Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amsdottorato.unibo.it/5190/.

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III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky d

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16

Ive, Tommy. "Growth and investigation of AlN/GaN and (Al,In)N/GaN based Bragg reflectors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15395.

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Die Synthese von AlN/GaN- und (Al,In)N/GaN-Braggreflektoren wird untersucht. Die Strukturen wurden mittels plasmaunterstützter Molekularstrahlepitaxie auf 6H-SiC(0001)-Substraten abgeschieden. Ferner wurde der Einfluß der Si-Dotierung auf die Oberflächenmorphologie sowie die strukturellen und elektrischen Eigenschaften der AlN/GaN-Braggreflektoren untersucht. Es wurden rißfreie Braggreflektoren mit einer hohen Reflektivität (R>99%) und einem bei 450 nm zentrierten Stopband erhalten. Die Si-dotierten Strukturen weisen eine ohmsche I-V-Charakteristik im gesamten Meßbereich sowie einen spezifisch

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17

Feix, Felix. "Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/19134.

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(In,Ga)N/GaN-Leuchtdioden wurden vor mehr als 10 Jahren kommerzialisiert, dennoch ist das Verständnis über den Einfluss von Lokalisierung auf die Rekombinationsdynamik in den (In,Ga)N/GaN Quantengräben (QG) unvollständig. In dieser Arbeit nutzen wir die temperaturabhängige stationäre und zeitaufgelöste Spektroskopie der Photolumineszenz (PL), um diesen Einfluss in einer typischen Ga-polaren, planaren (In,Ga)N/GaN-QG-Struktur zu untersuchen. Zusätzlich dehnen wir unsere Studie auf N-polare, axiale (In,Ga)N/GaN Quantumscheiben, nichtpolare Kern/Mantel GaN/(In,Ga)N µ-Drähte und Ga-polare, submono

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18

Lee, Jaesun. "Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1158695879.

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19

Fisichella, Gabriele. "Graphene Heterostructures with Wide Bandgap Semiconductors." Doctoral thesis, Università di Catania, 2015. http://hdl.handle.net/10761/3869.

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Graphene (Gr) is a two dimensional material constituted by an atomically thin carbon membrane, characterized by a unique combination of excellent electrical, optical, thermal and mechanical properties. Its main limitation for microelectronic applications is related to the lack of a bandgap, leading to a poor Ion/Ioff ratio when it is considered as channel material for MOSFET devices. Novel device concepts based on Gr heterostructures with semiconductors are currently under consideration, in order to overcome these limitations. These devices are based on the vertical current transport through G

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20

Müllhäuser, Jochen R. "Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy." [S.l. : s.n.], 1999. http://deposit.ddb.de/cgi-bin/dokserv?idn=958732159.

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21

Cheriton, Ross. "Design and Characterization of InGaN/GaN Dot-in-Nanowire Heterostructures for High Efficiency Solar Cells." Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/37905.

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Light from the sun is an attractive source of energy for its renewability, supply, scalability, and cost. Silicon solar cells are the dominant technology of choice for harnessing solar energy in the form of electricity, but the designs are approaching their practical efficiency limits. New multijunction designs which use the tunable properties of the more expensive III-V semiconductors have historically been relegated to space applications where absolute power conversion efficiency, resilience to radiation, and weight are more important considerations than cost. Some of the more recent develop

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22

Müllhäuser, Jochen R. "Properties of Zincblende GaN and (In,Ga,Al)N Heterostructures grown by Molecular Beam Epitaxy." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 1999. http://dx.doi.org/10.18452/14382.

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Während über hexagonales (alpha) GaN zum ersten Mal 1932 berichtet wurde, gelang erst 1989 die Synthese einer mit Molekularstrahlepitaxie (MBE) auf 3C-SiC epitaktisch gewachsenen, metastabilen kubischen (eta) GaN Schicht. Die vorliegende Arbeit befaßt sich mit der Herstellung der Verbindungen eta-(In,Ga,Al)N mittels RF-Plasma unterstützter MBE auf GaAs(001) und den mikrostrukturellen sowie optischen Eigenschaften dieses neuartigen Materialsystems. Im Vergleich zur hexagonalen bietet die kubische Kristallstruktur auf Grund ihrer höheren Symmetrie potentielle Vorteile für die Anwendung in optisc

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23

Tchernycheva, Maria. "PHYSIQUE DES TRANSITIONS INTERSOUSBANDES DES HETEROSTRUCTURES DE GAN / ALN POUR L'OPTOELECTRONIQUE À LAMBDA = 1,3 - 1,55 MICRON." Phd thesis, Université Paris Sud - Paris XI, 2005. http://tel.archives-ouvertes.fr/tel-00011347.

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Dans les années 80-90 la physique et les applications des transitions intersousbandes ont connu un essor remarquable. Il reste aujourd'hui deux frontières à explorer : l'extension vers les grandes longueurs d'onde du domaine THz et celle vers le proche infrarouge. Pour atteindre le domaine spectral des télécommunications par fibre optique, il faut disposer d'hétérostructures présentant une discontinuité de potentiel élevée. Les hétérostructures de GaN/AlN, étudiées dans cette thèse, ont une discontinuité de potentiel en bande de conduction voisine de 1,75 eV et sont aujourd'hui les candidats l

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24

Zube, Christian [Verfasser], Angela [Akademischer Betreuer] Rizzi, and Markus [Akademischer Betreuer] Münzenberg. "Spin injection in MnGa/ GaN heterostructures / Christian Zube. Betreuer: Angela Rizzi. Gutachter: Angela Rizzi ; Markus Münzenberg." Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2016. http://d-nb.info/108124688X/34.

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25

Wecker, Tobias [Verfasser]. "Inter- and Intraband Carrier Dynamics in Cubic GaN/AlxGa1-xN Heterostructures Grown by MBE / Tobias Wecker." Paderborn : Universitätsbibliothek, 2018. http://d-nb.info/1155822927/34.

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26

Lähnemann, Jonas. "Luminescence of group-III-V nanowires containing heterostructures." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2013. http://dx.doi.org/10.18452/16797.

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In dieser Dissertation wird die spektrale und örtliche Verteilung der Lumineszenz von Heterostrukturen in selbstorganisierten Nanodrähten (ND) mit Hilfe von Kathodolumineszenz-Spektroskopie (KL) im Rasterelektronenmikroskop untersucht. Diese Methode wird ergänzt durch Messungen der kontinuierlichen und zeitaufgelösten Mikro-Photolumineszenz. Drei verschiedene Strukturen werden behandelt: (i) GaAs-ND bestehend aus Segmenten der Wurtzit (WZ) bzw. Zinkblende (ZB) Kristallstrukturen, (ii) auf GaN-ND überwachsene GaN-Mikrokristalle und (iii) (In,Ga)N Einschlüsse in GaN-ND. Die gemischte Kristall

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27

Nath, Digbijoy N. "Advanced polarization engineering of III-nitride heterostructures towards high-speed device applications." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1376927078.

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28

Howgate, John [Verfasser], Martin [Akademischer Betreuer] Stutzmann, and Stefan [Akademischer Betreuer] Thalhammer. "GaN Heterostructures for Biosensing and Radiation Detection / John Howgate. Gutachter: Martin Stutzmann ; Stefan Thalhammer. Betreuer: Martin Stutzmann." München : Universitätsbibliothek der TU München, 2012. http://d-nb.info/1031550933/34.

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29

Connors, Benjamin James. "Simulation of current crowding mitigation in GaN core-shell nanowire led designs." Thesis, Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41206.

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Core-shell nanowire LEDs are light emitting devices which, due to a high aspect ratio, have low substrate sensitivity, allowing the possibility of low defect density GaN light emitting diodes. Current growth techniques and physical non-idealities make the production of high conductivity p-type GaN for the shell region of these devices difficult. Due to the structure of core-shell nanowires and the difference in conductivity between ntype and p-type GaN, the full junction area of a core-shell nanowire is not used efficiently. To address this problem, a series of possible doping profiles

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30

Nadar, Salman. "Tansistors à effet de champ à base de GaAs et de GaN pour l'imagerie THz." Thesis, Montpellier 2, 2010. http://www.theses.fr/2010MON20174.

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Les dernières années montrent des nombreuses applications de la spectroscopie Teraheretz (THz) dans le domaine de sécurité postale, contrôle de la qualité, médecine et biologie. Après les premières expériences de l'imagerie avec un seul élément / détecteur, l'étape suivante est l'utilisation de matrices de détecteurs. Par conséquent, la nécessité de détecteurs THz sensibles, très rapides, opérant à température ambiante et intégrable facilement en matrice est devenue crucial. Les transistors à effet de champ semblaient être les candidats les plus appropriés pour la construction du première matr

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31

Okur, Serdal. "Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics." VCU Scholars Compass, 2014. http://scholarscompass.vcu.edu/etd/3647.

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OPTICAL CHARACTERIZATION OF INGAN HETEROSTRUCTURES FOR BLUE LIGHT EMITTERS AND VERTICAL CAVITY LASERS: EFFICIENCY AND RECOMBINATION DYNAMICS By Serdal Okur, Ph.D. A thesis submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy at Virginia Commonwealth University. Virginia Commonwealth University, 2014. Major Director: Ümit Özgür, Associate Professor, Electrical and Computer Engineering This thesis explores radiative efficiencies and recombination dynamics in InGaN-based heterostructures and their applications as active regions in blue light emitters and par

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32

Ciechonski, Rafal. "Growth and characterization of SiC and GaN." Doctoral thesis, Linköpings universitet, Materiefysik, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-10314.

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At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. High-quality substrates will significantly improve device performance and yield. One of the aims of the thesis is further understanding of polytype inclusion formation as well as impurity control in SiC bulk crystals grown using PVT method also termed seeded sublimation method. Carbonization of the source

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Sun, Yue-Jun. "Growth and characterization of M-plane GaN and (In, Ga)N/GaN multiple quantum wells." Doctoral thesis, [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=97256375X.

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Broxtermann, Daniel [Verfasser], Angela [Akademischer Betreuer] Rizzi, and Andreas [Akademischer Betreuer] Hangleiter. "Towards high electron mobility in Gan(0001) based InGaN and AlGaN heterostructures / Daniel Broxtermann. Gutachter: Angela Rizzi ; Andreas Hangleiter. Betreuer: Angela Rizzi." Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2011. http://d-nb.info/1043665374/34.

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Feix, Felix [Verfasser], Henning [Gutachter] Riechert, Oliver [Gutachter] Benson, and Eoin [Gutachter] O'Reilly. "Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity / Felix Feix ; Gutachter: Henning Riechert, Oliver Benson, Eoin O'Reilly." Berlin : Humboldt-Universität zu Berlin, 2018. http://d-nb.info/1185667482/34.

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Colussi, Marcio Luiz. "Investigação teórica sobre possíveis aplicações na eletrônica de nanofios de AlN, GaN e InN: um estudo de primeiros princípios." Universidade Federal de Santa Maria, 2012. http://repositorio.ufsm.br/handle/1/3910.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior<br>Using the formalism of Density Functional Theory with spin polarization and the Generalized Gradient Approximation for exchange and correlation term, we studied the stability and electronic properties of substitutional impurities of C, Si and Ge in GaN, AlN and InN nanowires and the variation of the band offset with the diameter variation in AlN/GaN nanowires heterojunctions. For the study of substitutional impurities we use AlN, GaN and InN nanowires in the wurtzite phase with diameter of 14.47 Å, 14.7 Å and 16.5 Å, respectively.

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James, William Thomas. "Electro-thermal-mechanical modeling of GaN HFETs and MOSHFETs." Thesis, Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41212.

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High power Gallium Nitride (GaN) based field effect transistors are used in many high power applications from RADARs to communications. These devices dissipate a large amount of power and sustain high electric fields during operation. High power dissipation occurs in the form of heat generation through Joule heating which also results in localized hot spot formation that induces thermal stresses. In addition, because GaN is strongly piezoelectric, high electric fields result in large inverse piezoelectric stresses. Combined with residual stresses due to growth conditions, these effects are bel

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38

Rosales, Daniel. "Etude des propriétés optiques de nanostructures quantiques semi-polaires et non-polaires à base de nitrure de gallium (GaN)." Thesis, Montpellier, 2015. http://www.theses.fr/2015MONTS180/document.

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Nous étudions les propriétés optiques de nanostructures (Al,Ga)N/GaN crûes selon diverses orientations cristallographiques. Les orientations concernées sont : le plan non-polaire (1-100) ou plan m ; le plan semi-polaire (1-101) ou plan s ; et le plan semi-polaire (11-22). Dans un premier temps, nous nous consacrons à l'étude de l'anisotropie de la réponse optique de puits quantiques crûs selon les plans m et s. Dans un deuxième temps, nous évaluons les effets de la température sur les propriétés optiques de ces puits quantiques en utilisant la technique de photoluminescence résolue en temps qu

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Thamm, Andreas. "Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al, Ga)N-Heterostrukturen auf SiC(0001)." Doctoral thesis, [S.l. : s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=963475711.

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Lee, Sunyoung. "Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1149095133.

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41

Kun-Ta, Wu. "Electrical transport in AlGaN/GaN heterostructures." 2005. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2007200523291100.

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Wu, Kun-Ta, and 吳坤達. "Electrical transport in AlGaN/GaN heterostructures." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/36668486823763821097.

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碩士<br>國立臺灣大學<br>物理研究所<br>93<br>In this thesis, I will report on two measurements on AlGaN/GaN high electron mobility transistors (HEMTs). This thesis consists of the following two parts. 1.Transport in AlxGa1-xN/GaN HEMTs with different Al compositions We performed measurements on three AlxGa1-xN/GaN HEMTs with different Al contents (11%, 15%, and 25% respectively). All three samples are grown on sapphire substrates, and the mobility measurements indicate that AlxGa1-xN/GaN HEMTs with 15% Al content have the highest mobility (6600 cm2/Vs at 10K). If the Al content of AlxGa1-xN/GaN HEMTs e

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Zube, Christian. "Spin injection in MnGa/ GaN heterostructures." Doctoral thesis, 2015. http://hdl.handle.net/11858/00-1735-0000-0028-868B-4.

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Lee, Jheng-Wei, and 李政威. "Optical properties of AlGaN/GaN heterostructures." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/24255202410895775045.

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碩士<br>國立東華大學<br>光電工程研究所<br>96<br>In this thesis, the optical properties of several wurtzite AlGaN/GaN heterostructures have been characterized by photoluminescence(PL), thermo-reflectance(TR) and contactless electroreflectance(CER) measurements. Because the special polarization effects that dissimilar to the groups of GaAs heterostructrres, the AlGaN/GaN heterostructures generate automatically the two-dimentional electron gas(2DEG) at the interface of AlGaN and GaN without modulation doping. From PL measurements, we can observe the A(heavy hole state), B(light hole state) and C(crystal-field s

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Gau, Ming-Horng, and 高鳴宏. "Growth and characterization of AlGaN/GaN heterostructures." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/33031693576480418788.

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碩士<br>國立中山大學<br>物理學系研究所<br>92<br>We will discuss the growth and characterization of AlxGa1-xN/GaN on sapphire substrate by plasma-assisted molecular beam epitaxy. By performing the X-ray diffraction (XRD) of our sample, we could control the fraction of Aluminum in about 0%, 16%, and 31% with varying the equivalent pressure of Aluminum. Under the investigation of field emission scanning electron microscopy (FESEM) and reflection high energy electron diffraction (RHEED) pattern, we can determinate the samples are N-polarity. The photoluminescence (PL) spectra show the bowing coefficient of AlGaN

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Grenko, Judith Ann. "Characterization of homoepitaxially-grown AlGaN/GaN heterostructures." 2009. http://www.lib.ncsu.edu/theses/available/etd-08172009-100328/unrestricted/etd.pdf.

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Chen, Yen-Fen, and 陳彥芬. "Raman spectroscopy study of GaN embedded in heterostructures." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/00149186976021118981.

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碩士<br>國立彰化師範大學<br>電子工程學系<br>99<br>The Raman scattering spectroscopy of GaN epitaxial layers grown on various sapphire substrates is studied in this thesis. We focus on the signals of E2high與A1(LO) to explore the GaN material quality affected by the substrate, the relationship between the Hall carrier concentration and Raman shift, and the possibility of residual strain resident inside. Our research work demonstrates the unique functionality of Raman scattering spectroscopy used for realizing and monitoring the epitaxial material quality.

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Pant, Punam. "Characterization of the nucleation layer in GaN/sapphire heterostructures." 2005. http://www.lib.ncsu.edu/theses/available/etd-07272005-192740/unrestricted/etd.pdf.

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Yang, Wen-Han, and 楊文翰. "Ab-initio Study of GaN(0001)/TiN(111) Heterostructures." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/21030727504379179190.

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碩士<br>國立中興大學<br>精密工程學系所<br>103<br>In this work, the heteroepitaxial growths of wurtzite GaN(0001) on fcc TiN(111) were studied by doing the first-principles calculations. For N-polar GaN grown on TiN under N-rich and Ga-rich ambients, the interface energy of GaN(0001)/TiN(111) heterojunction would have a minimal value of −0.064 eV/Å2 while N−Ti bonds are present in the interface structure. Moreover, the result from the band offset calculations of GaN(0001)/TiN(111) reveals the lowest interfacial energy at 3.79 eV. This result agrees with the previous work that successfully grew epitaxial GaN o

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韓孝賢. "Electron transport in GaN/Al0.15Ga0.85N heterostructures at low temperatures." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/79028528896613165232.

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碩士<br>國立嘉義大學<br>光電暨固態電子研究所<br>95<br>We report on experimental studies of an Al0.15Ga0.85N/GaN heterostructures grown on p-type Si(111) substrates under applied magnetic field at low-temperature. The major content of this thesis are following: The device being studied in this work was grown by metal-organic vapor phase epitaxy. We especially introduced AlN layers during the crystal growth to reduce defects in GaN and AlGaN and we also growth an ultra-thin SiNx film to increased Hall mobility to 2500 cm2/V-s, therefore we can get better experimental data. We use the four-probe van der Pauw mea

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