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Journal articles on the topic 'GaN Heterostructures'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Ren, Kai, Ruxin Zheng, Peng Xu, et al. "Electronic and Optical Properties of Atomic-Scale Heterostructure Based on MXene and MN (M = Al, Ga): A DFT Investigation." Nanomaterials 11, no. 9 (2021): 2236. http://dx.doi.org/10.3390/nano11092236.

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After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to form a heterostructure. In this work, based on first-principles calculation, some charming properties of the heterostructure constructed by Hf2CO2, AlN and GaN are addressed. The results show that Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures can keep their original band structure shape and have strong thermal stabil

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2

Gladysheva, Nadezhda B., Vadim V. Gruzdov, Yurii V. Kolkovskii, Yulii A. Kontsevoy, and Evgenii F. Pevtsov. "Control of yellow photoluminescence in AlGaN/GaN heterostructures." Modern Electronic Materials 5, no. 2 (2019): 87–89. http://dx.doi.org/10.3897/j.moem.5.2.51391.

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Photoluminescence with the peak corresponding to yellow color of the visible spectrum (so-called yellow luminescence) originates from deep levels in the GaN buffer layers of heterostructures and depends on heterostructure growth conditions. In turn deep levels affect the resistance of Ohmic contacts of microwave transistors fabricated from these heterostructures. This determines the reliability of GaN microwave transistor operation. Two types of units for control of photoluminescence with the peak in the yellow visible spectral region have been designed with the aim to control the quality of A

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3

HAN, S. M., S. Y. KIM, D. C. CHOO, et al. "ELECTRONIC PARAMETER AND SUBBAND STRUCTURE VARIATIONS DUE TO AN EMBEDDED AlN POTENTIAL BARRIER LAYER IN Al0.3Ga0.7N/GaN HETEROSTRUCTURES." Surface Review and Letters 14, no. 04 (2007): 807–11. http://dx.doi.org/10.1142/s0218625x07010305.

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Carrier density of a two-dimensional electron gas (2DEG) in Al 0.3 Ga 0.7 N / GaN and Al 0.3 Ga 0.7 N / AlN / GaN heterostructures was investigated by performing Shubnikov-de Haas (SdH) measurements. The angular-dependent SdH measurements and the fast Fourier transformation results for the SdH data indicated 2DEG occupation of one subband in the triangular potential wells. The carrier densities of the 2DEGs in the Al 0.3 Ga 0.7 N / AlN / GaN and the Al 0.3 Ga 0.7 N / GaN heterostructures at 1.5 K, determined from the SdH data, were 1.28 × 1013 and 1.12 × 1013 cm-2, respectively. The electron c

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4

Maeda, Narihiko, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, and Naoki Kobayashi. "Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 362–68. http://dx.doi.org/10.1557/s1092578300004518.

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Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation o

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5

Gaevski, Mikhail, Jianyu Deng, Grigory Simin, and Remis Gaska. "500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000084–89. http://dx.doi.org/10.4071/hitec-tp16.

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High-temperature technology platform has been developed utilizing planar III-nitride heterostructures approach. The record high electron concentration and mobility in 2DEG channel of III-nitride devices result in very high operation speed and are remarkably stable within a broad temperature range, allowing device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality III-nitride heterostructure with very high carrier concentration and mobility that enables IC fast operation in a broad temperature range; (2) heterostructure field effect trans

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6

Michel, A., D. Hanser, R. F. Davis, et al. "Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 605–11. http://dx.doi.org/10.1557/s1092578300004828.

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Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of ∼2×1019 atoms/cm3 in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-μS compared to a sheet conductance of 20-μS for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg

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7

Слепченков, М. М., Д. А. Колосов та О. Е. Глухова. "Оптические свойства ван-дер-ваальсовых гетероструктур на основе 2D-монослоев борофена, нитрида галлия и оксида цинка". Оптика и спектроскопия 131, № 6 (2023): 754. http://dx.doi.org/10.21883/os.2023.06.55909.115-23.

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In this paper, we consider two new atomic models of van der Waals vertical heterostructures of metal-semiconductor type based on a 2D buckled triangular borophene with metallic conductivity and graphene-like 2D monolayers of gallium nitride GaN and zinc oxide ZnO, which are semiconductors. Using the density functional theory, the equilibrium configurations of supercells of the borophene/GaN and borophene/ZnO heterostructures are found and their thermodynamic stability at room temperature is shown. Within the framework of the nonstationary first-order perturbation theory, the optical characteri

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8

Frankowsky, G., F. Steuber, V. Härle, F. Scholz, and A. Hangleiter. "Optical gain in GaInN/GaN heterostructures." Applied Physics Letters 68, no. 26 (1996): 3746–48. http://dx.doi.org/10.1063/1.115993.

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9

Yusof, Ahmad Sauffi, Zainuriah Hassan, Sidi Ould Saad Hamady, et al. "The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures." Microelectronics International 38, no. 3 (2021): 105–12. http://dx.doi.org/10.1108/mi-02-2021-0018.

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Purpose The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and the growth process of InGaN/GaN heterostructures. Design/methodology/approach To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation metal-organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.4 µm undoped-GaN (ud-GaN) and GaN nucleation layer, respectively, over a commercial 2” c-plane flat sapphire substrate. The InGaN layers were grown at different tem

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10

Liu, Dongjing, Jingjie Zhu, Fu Zhou, Guoqi Zhang, and Daoguo Yang. "Molecular dynamics study of tensile properties of graphene/GaN heterostructures." Journal of Physics: Conference Series 2390, no. 1 (2022): 012033. http://dx.doi.org/10.1088/1742-6596/2390/1/012033.

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Abstract Graphene/GaN nanocomposites have been widely used in high-power and high-frequency optoelectronic devices. At present, the thermal transport characteristics of graphene/gallium nitride heterostructures have been investigated by many scholars, but their mechanical properties have not been systematically studied. In this paper, the effects of graphene layer number, temperature and interfacial structure on the mechanical properties of graphene/GaN heterostructures were investigated by molecular dynamics method. The mechanical properties of materials were analyzed by failure stress, failu

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11

Slepchenkov, Michael M., Dmitry A. Kolosov, Igor S. Nefedov, and Olga E. Glukhova. "Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation: First-Principles Study." Materials 15, no. 24 (2022): 8921. http://dx.doi.org/10.3390/ma15248921.

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One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene a

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12

Greco, Giuseppe, Ferdinando Iucolano, Filippo Giannazzo, et al. "Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs." Materials Science Forum 858 (May 2016): 1170–73. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1170.

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In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57

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13

Li, Zixuan, V. I. Oleshko, and L. V. Vorobjeva. "Luminescence control of LED heterostructures Grown by method metalorganic vapor phase epitaxy on sapphire." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 11 (2022): 77–81. http://dx.doi.org/10.17223/00213411/65/11/77.

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The paper presents the results of spectral and cardinal characteristics of AlGaN/GaN and InGaN/GaN LED heterostructure pulsed cathodes and photoluminescence grown on sapphire by metal organic vapor phase epitaxy are introduced. The effects of high current electron beam energy density on the luminescence spectra and amplitude characteristics of heterostructures are studied. The spatial distribution of fluorescence characteristics on the wafer surface was studied. It is found that in InGaN/GaN heterostructures, the maxim shifts of stimulated cathodoluminescence spectra measured at different poin

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14

Kang, He, Hui-Jie Li, Shao-Yan Yang, et al. "Comparison of alloy disorder scatterings in Ga- and N-polar AlGaN/GaN heterostructures." International Journal of Modern Physics B 32, no. 02 (2018): 1850002. http://dx.doi.org/10.1142/s0217979218500029.

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The two-dimensional electron gas (2DEG) mobilities limited by alloy disorder (AD) scattering in both Ga- and N-polar AlGaN/GaN heterostructures are investigated. It was found that the AD scattering limited electron mobility in N-polar heterostructures is on the order of 103–104 cm2/Vs, which is comparable to the optical phonon scattering at room-temperature. In comparison, the AD scattering in Ga-polar samples is much less important. Moreover, the electron mobility decreases with the 2DEG density in the Ga-polar device but shows a reverse trend in the N-polar counterpart. This is found to be c

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15

Nguyen, Duc-Phuong, N. Regnault, R. Ferreira, and G. Bastard. "Alloy effects in Ga1−xInxN/GaN heterostructures." Solid State Communications 130, no. 11 (2004): 751–54. http://dx.doi.org/10.1016/j.ssc.2004.03.048.

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16

Tonisch, Katja, Wael Jatal, Ralf Granzner, et al. "2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates." Materials Science Forum 645-648 (April 2010): 1219–22. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1219.

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We present the realization of high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures grown on silicon substrates using a SiC transition layer. The growth of AlGaN/GaN heterostructures on Si (111) was performed using metalorganic chemical vapour deposition (MOCVD). The (111) SiC transition layer was realized by low pressure CVD and prevented Ga-induced meltback etching and Si-outdiffusion in the subsequent MOCVD growth. The two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface showed an electron sheet density of 1.5x1013 cm-3 and a mobility of 870 cm²/Vs

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17

Susanto, Iwan, Chi-Yu Tsai, Nurzal Nurzal, M. Zalu Purnomo, and Ing-Song Yu. "Study on the Structure of GaN films deposited on MoS2/Sapphire via Plasma-Assisted Molecular Beam Epitaxy." Recent in Engineering Science and Technology 1, no. 02 (2023): 12–17. http://dx.doi.org/10.59511/riestech.v1i02.14.

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The gallium nitride (GaN) films were grown on molybdenum disulfide (MoS2) layers via plasma-assisted molecular beam epitaxy (PA-MBE). The heterostructures of the GaN film were studied using reflection high-energy electron diffraction (RHEED) and HR-XRD. The heterostructures of GaN/MoS2/sapphire were revealed through cross-sectional transmission electron microscopy (TEM). The surface texture of the GaN films was analyzed using FE-SEM. Single-crystal heterostructure GaN films can be obtained on 2D MoS2/c-sapphire. The RHEED demonstrated spot patterns with high intensity showing the single crysta

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18

Tonisch, K., C. Buchheim, F. Niebelschütz, et al. "Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures." Journal of Applied Physics 104, no. 8 (2008): 084516. http://dx.doi.org/10.1063/1.3005885.

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19

Bidnyk, S., J. B. Lam, B. D. Little, et al. "Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 661–67. http://dx.doi.org/10.1557/s1092578300004907.

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We report on an experimental study of microstructure-based lasing in an optically pumped GaN/AlGaN separate confinement heterostructure (SCH). We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. The spacing, directionality, and far-field patterns of the lasing modes are shown to be the result of microcavities that were naturally formed in the structures due to strain relaxation. The temperature sensitivity of the lasing wavelength was found to be twice as low as that of bulk-like GaN films. Based on th

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20

Yang, Guang, та Bing-yang Cao. "Three-sensor 3ω-2ω method for the simultaneous measurement of thermal conductivity and thermal boundary resistance in film-on-substrate heterostructures". Journal of Applied Physics 133, № 4 (2023): 045104. http://dx.doi.org/10.1063/5.0120284.

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Solid heterostructures composed of substrates and epitaxial films are extensively used in advanced technologies, and their thermophysical properties fundamentally determine the performance, efficiency, and reliability of the corresponding devices. However, an experimental method that is truly appropriate for the thermophysical property measurement of solid heterostructures is still lacking. To this end, a three-sensor 3ω-2ω method is proposed, which can simultaneously measure the thermal conductivities of the film and the substrate, along with the film-substrate thermal boundary resistance (TB

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21

Wang, Ping, Ding Wang, Shubham Mondal, and Zetian Mi. "Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy." Applied Physics Letters 121, no. 2 (2022): 023501. http://dx.doi.org/10.1063/5.0097117.

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We demonstrate robust ferroelectricity in single-crystalline wurtzite phase N-polar ScAlN/GaN heterostructures grown on on-axis c-plane sapphire substrates by molecular beam epitaxy. The exactly aligned crystallographic orientation among the ScAlN, GaN, and sapphire substrate has been confirmed using x-ray diffraction measurements. The nearly lattice-matched N-polar Sc0.21Al0.79N/GaN heterostructure shows a highly uniform coercive field (∼4.6 MV/cm at 10 kHz) and remnant polarization (∼90 μC/cm2) across the whole wafer. The reliability of N-polar Sc0.21Al0.79N/GaN ferroelectricity has been sys

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JIANG, Z. S., W. ZHANG, Q. JI, et al. "TEMPERATURE DEPENDENCE OF RELAXATION IN AlGaN/GaN HETEROSTRUCTURES." Surface Review and Letters 14, no. 04 (2007): 837–40. http://dx.doi.org/10.1142/s0218625x07010135.

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Effects of Si 3 N 4 passivation layer on the lattice strain of Al 0.22 Ga 0.78 N layer with the thickness of 100 nm has been studied by in situ X-ray diffraction by the temperature range of 25°C–550°C. Results show that the temperature dependence of the strain relaxations can be separated into three linear regions. After passivation, an additional in-plane tensile strain is observed. The residual tensile strain increases with increasing temperature at low temperature, while at higher temperature the residual tensile strain decreases slightly. There is clear influence when a passive layer is de

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Кукушкин, С. А., А. М. Мизеров, А. С. Гращенко та ін. "Фотоэлектрические свойства слоев GaN, выращенных методом молекулярно-лучевой эпитаксии с плазменной активацией на подложках Si(111) и эпитаксиальных слоях SiC на Si(111)". Физика и техника полупроводников 53, № 2 (2019): 190. http://dx.doi.org/10.21883/ftp.2019.02.47097.8915.

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AbstractThe photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical silicon substrates, but with different buffer layers, are experimentally investigated. The GaN/SiC/Si(111) structure is formed on a Si substrate with the SiC buffer layer grown by a new atom-substitution technique and the GaN/Si(111) structure, on a Si substrate subjected to pre-epitaxial plasma nitridation. The significant effect of carbon-vacancy clusters contained in the SiC layer on the growth of the GaN layer

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Heikman, Sten, Stacia Keller, Yuan Wu, James S. Speck, Steven P. DenBaars, and Umesh K. Mishra. "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures." Journal of Applied Physics 93, no. 12 (2003): 10114–18. http://dx.doi.org/10.1063/1.1577222.

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Sankin, A. V., V. I. Altukhov, and Z. I. Dadasheva. "Thin SiC and Gan-Based Films and Structures: Production and Properties." Key Engineering Materials 909 (February 4, 2022): 156–61. http://dx.doi.org/10.4028/p-uvvw11.

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The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing thin films and heterostructures based on SiC, GaN and their solid solutions. The first model makes it possible to determine the sputtering coefficient when producing films by high-frequency magnetron sputtering. In the second quantum-mechanical model, the equation for the gap of the mean field of co

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26

Nath, D. N., Z. C. Yang, C. Y. Lee, P. S. Park, Y. R. Wu, and S. Rajan. "Unipolar vertical transport in GaN/AlGaN/GaN heterostructures." Applied Physics Letters 103, no. 2 (2013): 022102. http://dx.doi.org/10.1063/1.4813309.

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27

Bayraklı, Aydın, Engin Arslan, Tezer Fırat, et al. "Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures." physica status solidi (a) 209, no. 6 (2012): 1119–23. http://dx.doi.org/10.1002/pssa.201127416.

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28

Zhang, Weidong, Tyler A. Growden, Paul R. Berger, David F. Storm, David J. Meyer, and Elliott R. Brown. "Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures." Energies 14, no. 20 (2021): 6654. http://dx.doi.org/10.3390/en14206654.

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An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, the photon energies are consistent with A-exciton emission. At 4.2 K, the exciton type likely transforms into B-exciton. These studies confirm that the EL emission comes from a cross-bandgap (or band-to-band) electron-hole radiative recombination and is excitonic. The excitons are formed by the holes generate

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Zhou, Shi, Shun Wan, Bo Zou, et al. "Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding." Crystals 13, no. 2 (2023): 217. http://dx.doi.org/10.3390/cryst13020217.

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Thinning the buffer layer thickness between the GaN epilayer and Si substrate without introducing large residual stress is persistently desired for GaN-on-Si devices to promote their thermal budgets and low-cost, multifunctional applications. In this work, the GaN-on-Si heterostructures were directly bonded at room temperature by surface activated bonding (SAB) and the therein residual stress states were investigated by confocal micro-Raman. The effects of thermal annealing process on the residual stress and interfacial microstructure in SAB fabricated GaN-on-Si heterostructures were also syst

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Chang, Chiao-Yun, Huei-Min Huang, Yu-Pin Lan, et al. "Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure." MRS Proceedings 1538 (2013): 303–7. http://dx.doi.org/10.1557/opl.2013.550.

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AbstractThe crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1$\bar 1$02) // a-GaN (11$\bar 2$0) and ZnGa2O4 (220) // semi-polar GaN (10$\bar 1$$\bar 3$). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the form

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31

Davydov C. Yu. "Pyroelectric coefficient estimations for aluminum and gallium compounds." Physics of the Solid State 64, no. 5 (2022): 510. http://dx.doi.org/10.21883/pss.2022.05.53508.248.

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Analytical expression for pyroelectric coefficient p for the compounds with wurtzit structure is given. Obtained values of p for AlN and GaN are in satisfactory agreement with the first-principles calculations. Pyroelectric effect in the uniform epitaxial films and heterostructures is discussed. Keywords: pyroelectric coefficient, wurtzite structure, monocrystal, thin film, heterostructure.

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Willatzen, M., L. Wang, and L. C. Lew Yan Voon. "Electrostriction in GaN/AlN heterostructures." Superlattices and Microstructures 43, no. 5-6 (2008): 436–40. http://dx.doi.org/10.1016/j.spmi.2007.07.009.

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Schalwig, J., G. Müller, M. Eickhoff, O. Ambacher, and M. Stutzmann. "Gas sensitive GaN/AlGaN-heterostructures." Sensors and Actuators B: Chemical 87, no. 3 (2002): 425–30. http://dx.doi.org/10.1016/s0925-4005(02)00292-7.

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Enisherlova, Kira L., Lev A. Seidman, Ella M. Temper, and Yuliy A. Kontsevoy. "Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures." Modern Electronic Materials 7, no. 2 (2021): 63–71. http://dx.doi.org/10.3897/j.moem.7.2.73293.

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The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed

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35

Fisichella, Gabriele, Giuseppe Greco, Salvatore di Franco, et al. "Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures." Materials Science Forum 858 (May 2016): 1137–40. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1137.

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This paper presents a study of the vertical current transport in a graphene (Gr) heterostructure with AlxGa1-xN/GaN, which represent the main building block of a novel high frequency device, the hot electron transistor (HET) with Gr base. The morphological and electrical properties of this heterostructures have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (∼0.41 eV) and excellent lateral unifor

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Slepchenkov, Michael M., Dmitry A. Kolosov, and Olga E. Glukhova. "Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study." Materials 15, no. 12 (2022): 4084. http://dx.doi.org/10.3390/ma15124084.

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At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. It

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37

Göckeritz, Robert, Katja Tonisch, Wael Jatal, Lars Hiller, Frank Schwierz, and Jörg Pezoldt. "Side Gate Graphene and AlGaN/GaN Unipolar Nanoelectronic Devices." Advanced Materials Research 324 (August 2011): 427–30. http://dx.doi.org/10.4028/www.scientific.net/amr.324.427.

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Three-terminal junction devices were realized in graphene grown heteroepitaxially on semiinsulating silicon carbide as well as in AlGaN/GaN heterostructures grown by MOCVD on sapphire containing a two dimensional electron gas. These nanoelectronic devices were fabricated using electron beam lithography. In both types of heterostructures room temperature electrical measurements revealed a pronounced nonlinear electrical behavior of the fabricated nanoelectronic devices. The obtained voltage rectification at room temperature demonstrates the feasibility of func-tional three-terminal junctions in

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38

Rathore, Saad Ullah, Sima Dimitrijev, Hamid Amini Moghadam, and Faisal Mohd-Yasin. "Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures." Nanomanufacturing 1, no. 3 (2021): 171–75. http://dx.doi.org/10.3390/nanomanufacturing1030012.

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This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate deposited on the AlGaN surface, and (3) a thick dielectric passivation layer on the AlGaN surface. To derive the equations, we analyzed these scenarios by applying Gauss’s law. In contrast to the idealistic models, our analysis shows that the 2DEG charge density is proportional to the difference between spontaneous polarization of AlGaN and GaN,

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39

Богданов, С. А., А. А. Борисов, С. Н. Карпов, М. В. Кулиев, А. Б. Пашковский та Е. В. Терёшкин. "Нелокальная динамика электронов в AlGaN/GaN-транзисторных гетероструктурах". Письма в журнал технической физики 48, № 2 (2022): 44. http://dx.doi.org/10.21883/pjtf.2022.02.51922.18996.

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The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It is shown that if, in comparison with a pure bulk material, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field, then for GaN-based heterostructures, the decrease of the drift velocity overshot in the studied cases does not exceed 30%.

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40

Bogdanov S. A., Borisov A. A., Karpov S. N., Kuliyev M. V., Pashkovskii A. B., and Tereshkin E. V. "Nonlocal electron dynamics in GaN / AlGaN transistor heterostructures." Technical Physics Letters 48, no. 1 (2022): 84. http://dx.doi.org/10.21883/tpl.2022.01.52479.18996.

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The processes of nonlocal electron heating in transistor heterostructures based on gallium nitride and gallium arsenide were compared. It has been shown that, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field as compared with pure bulk GaAs, while in GaN-based heterostructures the decrease in the drift velocity overshot does not exceed 30% in the studied cases. Keywords: Real space transfer, field-effect transistor, gain factor

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41

Ren, Dahua, Yunhai Li, and Wenqi Xiong. "Vertically stacked GaN/WX₂ (X = S, Se, Te) heterostructures for photocatalysts and photoelectronic devices." RSC Advances 11, no. 57 (2021): 35954–59. http://dx.doi.org/10.1039/d1ra07308g.

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(a) Absorption spectrum of GaN/WX2 (X = S, Se, Te) heterostructures. (b) Schematic plot of the migration of photogenerated electrons and holes at the GaN/WS2 interface. (c) Band-edge alignments of GaN/WX2 heterostructures.

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42

Kaschner, A., J. Holst, U. von Gfug, et al. "Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 689–95. http://dx.doi.org/10.1557/s1092578300004944.

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We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with

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43

Малин, Т. В., Д. С. Милахин, И. А. Александров та ін. "Нелегированный высокоомный буферный слой GaN для HEMT AlGaN/GaN". Письма в журнал технической физики 45, № 15 (2019): 21. http://dx.doi.org/10.21883/pjtf.2019.15.48081.17844.

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In this paper the possibility of obtaining the intentionally undoped high resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors by ammonia molecular beam epitaxy was demonstrated. The growth conditions based on background impurity concentrations and point defects calculations for different gallium and ammonia flows ratios were optimized.

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44

Park, Pil Sung, Digbijoy N. Nath, and Siddharth Rajan. "Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures." IEEE Electron Device Letters 33, no. 7 (2012): 991–93. http://dx.doi.org/10.1109/led.2012.2196973.

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Leconte, S., E. Monroy, and J. M. Gérard. "Vertical electron transport study in GaN/AlN/GaN heterostructures." Superlattices and Microstructures 40, no. 4-6 (2006): 507–12. http://dx.doi.org/10.1016/j.spmi.2006.10.008.

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Hite, J. K., N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy. "GaN vertical and lateral polarity heterostructures on GaN substrates." Journal of Crystal Growth 332, no. 1 (2011): 43–47. http://dx.doi.org/10.1016/j.jcrysgro.2011.08.002.

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Wetzel, Christian, Tetsuya Takeuchi, Hiroshi Amano, and Isamu Akasaki. "Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures." Japanese Journal of Applied Physics 38, Part 2, No. 2B (1999): L163—L165. http://dx.doi.org/10.1143/jjap.38.l163.

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48

Umana-Membreno, G. A., G. Parish, B. D. Nener, D. Buttari, S. Keller, and U. K. Mishra. "Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures." physica status solidi (b) 244, no. 6 (2007): 1877–81. http://dx.doi.org/10.1002/pssb.200674872.

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Meier, Johanna, and Gerd Bacher. "Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs." Materials 15, no. 5 (2022): 1626. http://dx.doi.org/10.3390/ma15051626.

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LEDs based on planar InGaN/GaN heterostructures define an important standard for solid-state lighting. However, one drawback is the polarization field of the wurtzite heterostructure impacting both electron–hole overlap and emission energy. Three-dimensional core–shell microrods offer field-free sidewalls, thus improving radiative recombination rates while simultaneously increasing the light-emitting area per substrate size. Despite those promises, microrods have still not replaced planar devices. In this review, we discuss the progress in device processing and analysis of microrod LEDs and em

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TAN, GUIYING, and YONGBO SU. "DEPENDENCE OF CAPACITANCE–VOLTAGE CHARACTERISTICS OF NOMINALLY UNDOPED AlGaN/GaN HETEROSTRUCTURES ON SEVERAL KEY PARAMETERS OF THE MATERIALS." Modern Physics Letters B 25, no. 15 (2011): 1293–302. http://dx.doi.org/10.1142/s0217984911026267.

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Nominally undoped AlGaN / GaN heterostructure samples were grown on c-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition, and their material properties, such as crystal quality, roughness of heterointerface, thickness and Al mole fraction of AlGaN barrier layer, were identified by high resolution X-ray diffraction (HRXRD). Mercury-probe capacitance–voltage (C–V) measurements were carried out to investigate the carrier distribution in the heterostructures and accurately evaluate the sheet carrier concentration of two-dimensional electron gas (2DEG) formed at AlGaN

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