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Relevant bibliographies by topics / GaN. InN. InGaN

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Journal articles
Dissertations / Theses
Book chapters
Conference papers
Reports

Academic literature on the topic 'GaN. InN. InGaN'

Author: Grafiati

Published: 9 March 2024

Last updated: 31 July 2025

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Journal articles on the topic "GaN. InN. InGaN"

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Mollaamin, F. "Characterization and functionalization of ternary InGaN nanosurface towards energy storage system in solar cell basics: a molecular modelling study." Himia, Fizika ta Tehnologia Poverhni 16, no. 2 (2025): 271–87. https://doi.org/10.15407/hftp16.02.271.

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The energy storage was probed by hybrid materials of GaN, InN, InGaN, Si@InGaN, Zn@InGaN, Ag@InGaNusing first-principles studies. Electromagnetic and thermodynamic properties of GaN, InN, InGaN, Si@InGaN, Zn@InGaN, Ag@InGaN hetero clusters have been evaluated. The hypothesis of the energy adsorption phenomenon was confirmed by density distributions of PDOS and ELF for GaN, InN, InGaN, Si@InGaN, Zn@InGaN, Ag@InGaN hetero clusters. The two hetero clusters of Zn@InGaN and Ag@InGaN with the fluctuations of In, Ga, N and transition metals of Zn, Ag have indicated the same sensitivity graph of elect

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SEO*, Hye-Won. "Enhanced InN Solid Solubility in Pseudo-Binary InN-GaN (InGaN) Nanostructures." New Physics: Sae Mulli 66, no. 11 (2016): 1440–43. http://dx.doi.org/10.3938/npsm.66.1440.

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Popov, Maxim N., Jürgen Spitaler, Lorenz Romaner, Natalia Bedoya-Martínez, and René Hammer. "Bayesian Optimization of Hubbard U’s for Investigating InGaN Superlattices." Electronic Materials 2, no. 3 (2021): 370–81. http://dx.doi.org/10.3390/electronicmat2030025.

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In this study, we undertake a Bayesian optimization of the Hubbard U parameters of wurtzite GaN and InN. The optimized Us are then tested within the Hubbard-corrected local density approximation (LDA+U) approach against standard density functional theory, as well as a hybrid functional (HSE06). We present the electronic band structures of wurtzite GaN, InN, and (1:1) InGaN superlattice. In addition, we demonstrate the outstanding performance of the new parametrization, when computing the internal electric-fields in a series of [InN]1–[GaN]n superlattices (n = 2–5) stacked up along the c-axis.

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Kangawa, Yoshihiro, Tomonori Ito, Yoshinao Kumagai, and Akinori Koukitu. "Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE." Applied Surface Science 216, no. 1-4 (2003): 453–57. http://dx.doi.org/10.1016/s0169-4332(03)00396-9.

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Lai, Wei-Chih, Cheng-Hsiung Yen, and Shoou-Jinn Chang. "GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells." Applied Physics Express 6, no. 10 (2013): 102101. http://dx.doi.org/10.7567/apex.6.102101.

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Geerts, Wim, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, and Thomas Schmiedel. "Electrical transport in p-GaN, n-InN and n-InGaN." Solid-State Electronics 39, no. 9 (1996): 1289–94. http://dx.doi.org/10.1016/0038-1101(96)00047-0.

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Kusakabe, Kazuhide, Daichi Imai, Ke Wang, and Akihiko Yoshikawa. "InN/GaN short-period superlattices as ordered InGaN ternary alloys." physica status solidi (c) 13, no. 5-6 (2015): 205–8. http://dx.doi.org/10.1002/pssc.201510306.

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Yu, Chun-Ta, Wei-Chih Lai, Cheng-Hsiung Yen, and Shoou-Jinn Chang. "InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes." Optical Materials Express 3, no. 11 (2013): 1952. http://dx.doi.org/10.1364/ome.3.001952.

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Hazari, Arnab, Md Zunaid Baten, Lifan Yan, Joanna M. Millunchick, and Pallab Bhattacharya. "An InN/InGaN/GaN nanowire array guided wave photodiode on silicon." Applied Physics Letters 109, no. 19 (2016): 191102. http://dx.doi.org/10.1063/1.4967439.

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Li, Yi, Bin Liu, Rong Zhang, Zili Xie, and Youdou Zheng. "Investigation of optical properties of InGaN–InN–InGaN/GaN quantum-well in the green spectral regime." Physica E: Low-dimensional Systems and Nanostructures 44, no. 4 (2012): 821–25. http://dx.doi.org/10.1016/j.physe.2011.12.014.

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Dissertations / Theses on the topic "GaN. InN. InGaN"

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Liu, Ying. "Heteroepitaxial growth of InN and InGaN alloys on GaN(0001) by molecular beam epitaxy." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B36363558.

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Liu, Ying, and 劉穎. "Heteroepitaxial growth of InN and InGaN alloys on GaN(0001) by molecular beam epitaxy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B36363558.

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Jridi, Jihen. "Croissance par Epitaxie vapeur aux hydrures (HPVE) de nanofils (In,Ga)N pour les cellules solaires et les micro-LEDs." Electronic Thesis or Diss., Université Clermont Auvergne (2021-...), 2022. http://www.theses.fr/2022UCFAC121.

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Étant donné leurs propriétés physiques structurales et optoélectroniques très prometteuses, une attention particulière a été accordée aux semiconducteurs d’éléments III-V. L’utilisation des nitrures de géométrie 1D, les micro et nanofils, permet de répondre aux défis relatifs aux difficultés rencontrés lors de la croissance des couches 2D InGaN engendrées par le désaccord de maille entre substrat et matériau à élaborer, la ségrégation d’indium et le manque de substrat adéquats et à bas coût pour la croissance épitaxiale. Dans ce contexte, ce travail de thèse présente pour la première fois une

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Tamiazzo, Gianluca. "Loss Mechanisms in InGaN/GaN Quantum Well Structures." Doctoral thesis, Università degli studi di Padova, 2008. http://hdl.handle.net/11577/3425068.

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The study of the electro-optical properties of semiconductors has represented one of the major topics in the research of physicists and material scientists of the last century. Extensive efforts have been especially put in the last four decades into the search for materials emitting in the visible region, with the aim of developing Light Emitting Diodes (LEDs) for general outdoor lighting as well as for new applications, where micro-size and device integration are necessary requirements. GaN/InGaN/AlGaN-based LEDs lead nowadays the solid-state lighting market, which is in continuous expansi

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Monti, Desiree. "Study of the reliability of GaN-based optoelectronic devices: UV-LEDs and InGaN-based laser diodes." Doctoral thesis, Università degli studi di Padova, 2018. http://hdl.handle.net/11577/3427320.

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This thesis reports the main results obtained from the Ph.D. research activity of the candidate. The activity was focused on the study of the physical mechanisms responsible for the degradation of ultraviolet light emitting diodes (UV-LEDs) and InGaN-based laser diodes (LDs), in particular, we tried to understand the role of defects in the device degradation by means of advanced techniques such Deep-Level Transient Spectroscopy (DLTS) and Photocurrent (PC) Spectroscopy. The first part of the thesis will be dedicated to the work carried out on UV LEDs, in particular on four groups of UV-A LEDs

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Watson-Parris, Duncan Thomas Stephens. "Carrier localization in InGaN/GaN quantum wells." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/carrier-localization-in-ingangan-quantum-wells(d1f06539-6fde-4ec4-beac-31689a571804).html.

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Presented in this thesis are extensive theoretical investigations into the causes and effects of carrier localization in InGaN/GaN quantum wells. The results of the calculations agree well with experimental data, where it is available, and provide additional insights into the mechanisms that lead to some of the experimentally observed effects of localization. Firstly, the wave functions of the electrons and holes in InGaN/GaN quantum wells have been calculated by numerical solution of the effective-mass Schrödinger equation. In our calculations we have assumed a random distribution of indium

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La, Grassa Marco. "Defect-Related Processes and their Influence on the Efficiency and Degradation of InGaN-Based Leds." Doctoral thesis, Università degli studi di Padova, 2017. http://hdl.handle.net/11577/3424678.

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This thesis reports the main results obtained from the Ph.D. research activity of the candidate. The activity was focused on the study of defects and physical mechanisms that limit the efficiency of Light Emitting Diodes (LEDs) based on gallium nitride (GaN). In the first part of the thesis, the fundamental properties of gallium nitride will be briefly discussed, including its alloys, crystalline structure and internal polarization fields. After that, we will present an updated review based on the literature on the most important point defects and dislocations in GaN. Particular attention wil

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Hatami, Fariba. "Indium phosphide quantum dots in GaP and in In 0.48 Ga 0.52 P." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2002. http://dx.doi.org/10.18452/14873.

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Im Rahmen dieser Arbeit wurden selbstorganisierte, verspannte InP-Quantenpunkte mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und optische Eigenschaften untersucht. Die Quantenpunkte wurden sowohl in InGaP-Matrix gitterangepasst auf GaAs-Substrat als auch in GaP-Matrix auf GaP-Substrat realisiert. Die starke Gitterfehlanpassung von 3,8% im InP/InGaP- bzw. 7,7% im InP/GaP-Materialsystem ermöglicht Inselbildung mittels des Stranski-Krastanow-Wachstumsmodus: Ab einer kritischen InP-Schichtdicke findet kein zweidimensionales, sondern ein dreidimensionales Wachstum

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Chen, Chun-Jung, and 陳俊榮. "The study of simulation and kinetic analysis for GaN/InN/InGaN by metal organic chemical vapor deposition." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/4h863v.

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碩士<br>中原大學<br>化學工程研究所<br>103<br>A zero-dimension reactor model and the chemical mechanisms of GaN / InN / InGaN metal organic chemical vapor deposition (MOCVD) have been investigated in this research. The influence of the process parameters is discussed by Rate-Of-Production analysis. It is found that GaN reaction mechanism from literature can be successfully reduced and the model predictions agree with the experimental data. The model shows that the optimal temperature range for GaN MOCVD is from 900K to 1300K at diffusion-limit regime. The results of InN model show that the growth rate incre

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Chandan, Greeshma K. "InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4237.

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The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted molecular beam epitaxy (PAMBE) system equipped with a radio frequency (RF) plasma source. Device quality GaN epilayers were obtained and InGaN/Si(111) heterojunctions were studied. In- GaN based multi-quantum well LED structure has been realized for green emission. Further catalyst free ultra fine GaN nanorods were grown using a two step method and further InGaN nanostructur

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Book chapters on the topic "GaN. InN. InGaN"

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Ghosh, Partha, Dominik Zietlow, Michael J. Black, Larry S. Davis, and Xiaochen Hu. "InvGAN: Invertible GANs." In Lecture Notes in Computer Science. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-16788-1_1.

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Kumar, Krishna, and Bijaya Kumar Sahoo. "Thermal Rectifier Nature of InGaN/GaN Heterostructure." In Advances in Science, Technology & Innovation. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-68038-0_10.

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van der Laak, N. K., R. A. Oliver, M. J. Kappers, C. McAleese, and C. J. Humphreys. "Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-31915-8_2.

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Oliver, Rachel A., Nicole K. van der Laak, Menno J. Kappers, and Colin J. Humphreys. "Evolution of InGaN/GaN nanostructures and wetting layers during annealing." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-31915-8_6.

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Harchouch, N., Abdelkader Aissat, A. Laidouci, and J. P. Vilcot. "Temperature Effect on InGaN/GaN Multiwell Quantum Solar Cells Performances." In Artificial Intelligence in Renewable Energetic Systems. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-73192-6_52.

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Chouchen, Bilel, Mohamed Hichem Gazzah, and Hafedh Belmbrouk. "Enhanced Efficiency of InGaN/GaN MQW Solar Cell by Applying Stress." In Lecture Notes in Mechanical Engineering. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-27146-6_87.

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Giannoccaro, Giovanni, and Vittorio M. N. Passaro. "Analysis and Simulation of Superlattice GaN/InGaN p-i-n Solar Cells." In Springer Proceedings in Physics. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05521-3_13.

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Sharma, Abhishek, Kamal Lohani, Pramod Kumar, and Alok Jain. "Optimization of Al Composition in EBL of InGaN/GaN Based Laser Diodes." In Springer Proceedings in Physics. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_167.

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Okamoto, Koichi. "Highly Enhanced Light Emissions from InGaN/GaN Based on Nanophotonics and Plasmonics." In Progress in Nanophotonics 6. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-71516-8_1.

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Li, Jinmin, Junxi Wang, Xiaoyan Yi, et al. "InGaN/GaN Multiple Quantum Wells Materials as Well as Blue and Green LEDs." In Springer Series in Materials Science. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3_5.

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Conference papers on the topic "GaN. InN. InGaN"

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Prykhodko, Kyrylo, Valerii Zozulia, Oleg Botsula, Ievgen Gorovyi, and Yevhen Khodachok. "Impact of Temperature on Graded Gap InGaN-based Diode Characteristics." In 2024 IEEE 17th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET). IEEE, 2024. http://dx.doi.org/10.1109/tcset64720.2024.10755943.

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Lee, Sang-Tae, Hyo-Seok Choi, Byung-Guon Park, et al. "Near Infrared light emitting from InN/InGaN/GaN Dot-in-a-Nanorod Heterostructure." In CLEO: QELS_Fundamental Science. OSA, 2013. http://dx.doi.org/10.1364/cleo_qels.2013.jth2a.102.

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Polash, Md Mobarak Hossain, and M. Shah Alam. "Design analysis of InN/InGaN quantum well laser with GaN layers at 1320-1350 nm wavelength." In 2014 International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT). IEEE, 2014. http://dx.doi.org/10.1109/iceeict.2014.6919093.

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Wood, Michael G., Anthony Rice, Stephen R. Lee, et al. "Non-Planar Nano-Epitaxy of InGaN Quantum-Well Emitters for Green-Yellow Semiconductor Lasers." In Frontiers in Optics. Optica Publishing Group, 2023. http://dx.doi.org/10.1364/fio.2023.jtu5a.14.

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We report non-planar regrowth of InGaN quantum wells on triangular InGaN buffer layers grown on sub-200nm-wide GaN ridges. Photo-pumped internal quantum efficiencies above 20% at yellow wavelengths hold promise for semiconductor laser gain regions.

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Abdullah, Rafid A., Kamarulazizi Ibrahim, A. K. Yahya, and Shah Alam. "Reducing Threshold of Multi Quantum Wells InGaN Laser Diode by Using InGaN∕GaN Waveguide." In PROGRESS OF PHYSICS RESEARCH IN MALAYSIA: PERFIK2009. AIP, 2010. http://dx.doi.org/10.1063/1.3469616.

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Okamoto, Koichi, Yoichi Kawakami, Masahide Terazima, and Axel Scherer. "Temporal and spatial-resolved nonlinear spectroscopy of InGaN/GaN." In Frontiers in Optics. OSA, 2004. http://dx.doi.org/10.1364/fio.2004.fmn4.

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Watson, Scott, Amit Yadav, Szymon Stanczyk, et al. "Recent progress in distributed feedback InGaN/GaN laser diodes." In Novel In-Plane Semiconductor Lasers XVIII, edited by Alexey A. Belyanin and Peter M. Smowton. SPIE, 2019. http://dx.doi.org/10.1117/12.2507630.

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Khan, Asif Abdullah, Shimanto Mohammad, Md Fahim-Al-Fattah, Md Ashiqul Amin, and Chowdhury Zia-Ul Hasan. "Analytical demonstration of gate leakage current in AlGaN/GaN/InGaN/GaN DH-HEMT." In 2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT). IEEE, 2017. http://dx.doi.org/10.1109/rteict.2017.8256624.

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Wu, G. M., and C. F. Hung. "Photo-luminescence in InGaN/GaN Multiple Quantum Wells Grown on Silicon." In Frontiers in Optics. OSA, 2005. http://dx.doi.org/10.1364/fio.2005.jwa67.

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Tomm, Jens W., Artem Bercha, Grzegorz Muziol, and Witold Trzeciakowski. "Recombination kinetics in polar InGaN/GaN structures with wide quantum wells." In Novel In-Plane Semiconductor Lasers XXIII, edited by Alexey A. Belyanin and Peter M. Smowton. SPIE, 2024. http://dx.doi.org/10.1117/12.3000148.

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Reports on the topic "GaN. InN. InGaN"

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Nadeau, Elisabet, Andrea von Essen, and Anne Kjersti Bakken. Effekt av kvävegödslingsstrategi på gräsvallens avkastning och foderkvalitet vid olika utvecklingsstadier i första skörd. Department of Applied Animal Science and Welfare, Swedish University of Agricultural Sciences, 2024. http://dx.doi.org/10.54612/a.38e4a3v12l.

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Syftet med projektet var att studera effekt av delad kväve(N)-giva och tidpunkt för den sena N-givan innan första skörd på avkastning, kvävebalans och fodervärde med speciellt fokus på råproteinhalt och råproteinets kvalitet i en timotej/ängssvingel vall. En vallfröblandning med 80 % timotej och 20 % ängssvingel såddes 2017 på NIBIO Kvithamar, Trondheim och 2018 på NIBIO Særheim, Stavanger, Norge och på Rådde gård, Länghem, Sverige (Hushållningssällskapet Sjuhärad). En yta av den sådda arealen skördades som förstaårsvall 2018 på NIBIO Kvithamar och som förstaårsvall 2019 på NIBIO Særheim och R

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Choquette, Gary. PR-000-18COMP-R01 Gas Engine Emissions Compendium. Pipeline Research Council International, Inc. (PRCI), 2019. http://dx.doi.org/10.55274/r0011546.

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The PRCI Technical Committees have carried out many research projects related to the subject of natural gas fueled engine emissions. This report, therefore, presents a summary of past PRCI funded studies in the area of Gas Engine Emissions. Since studies sponsored by other industry groups (e.g., INGAA, EPRG, APIA, CEPA, etc.) or by individual pipeline companies are not included, this report does not represent a review of the topic in the broader industry-wide sense. Instead, it is designed to provide a guide to past work so that current TC members can identify and locate project reports that m

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Tiku, Sanjay, Arnav Rana, and Binoy John. PR214-223810-R01 Improvement in Dent Assessment and Management Tools. Pipeline Research Council International, Inc. (PRCI), 2024. http://dx.doi.org/10.55274/r0000090.

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This project builds on and supplements existing mechanical damage (MD) assessment and management tools, developed on behalf of Pipeline Research Council International (PRCI), Interstate Natural Gas Association of America (INGAA), Canadian Energy Pipeline Association (CEPA), American Petroleum Institute (API), other research organizations and individual pipeline operators, many of which are included in API Recommended Practice (RP) 1183 (1). Since the assembly of API RP 1183, PRCI has continued its mechanical damage strategic research priority in the development of a greater understanding of th

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Tiku, Sanjay, Arnav Rana, and Binoy John. PR214-213800-R01 Evaluation of API RP 1183 Dent Fatigue Analyses using In-Service Dents Data. Pipeline Research Council International, Inc. (PRCI), 2024. http://dx.doi.org/10.55274/r0000092.

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The objective of this project is to validate the existing mechanical damage (MD) assessment and management tools based on in-service field dents data provided by pipeline operators. The data provided included in-line inspection (ILI), dent geometry data, operating pressure history data and in-ditch inspection observations. The dent fatigue life analysis tools were developed on behalf of Pipeline Research Council International (PRCI), Interstate Natural Gas Association of America (INGAA), Canadian Energy Pipeline Association (CEPA), other research organizations and individual pipeline operators

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Rana, Arnav, and Sanjay Tiku. PR-214-223806-R01 Guidance for Performing Engineering Critical Assessments for Dents on Natural Gas Pipelines. Pipeline Research Council International, Inc. (PRCI), 2023. http://dx.doi.org/10.55274/r0000044.

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This project builds on mechanical damage (MD) assessment and management tools, developed on behalf of Pipeline Research Council International (PRCI), Interstate Natural Gas Association of America (INGAA), Canadian Energy Pipeline Association (CEPA), American Petroleum Institute (API), other research organizations and individual pipeline operators and included in API RP 1183 [1]. These include dent shape, restraint condition and interacting feature characterization; operational maximum and cyclic internal pressure characterization, screening tools defining non-injurious dent shapes based on pip

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Rana, Arnav, Sanjay Tiku, and Aaron Dinovitzer. PR-214-203806-R01 Improve Dent-Cracking Assessment Methods. Pipeline Research Council International, Inc. (PRCI), 2022. http://dx.doi.org/10.55274/r0012227.

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This work was funded in part, under the Department of Transportation, Pipeline and Hazardous Materials Safety Administration. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Pipeline and Hazardous Materials Safety Administration, the Department of Transportation, or the U.S. Government. This project builds on mechanical damage (MD) assessment and management tools, developed on behalf of Pipeline Research Council International (PRCI), Interstate Natural Gas Asso

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Mittelstadt. PR-430-153706-R01 Hydrostatic Test Guidelines for Integrity Management. Pipeline Research Council International, Inc. (PRCI), 2016. http://dx.doi.org/10.55274/r0010694.

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This work develops a comprehensive guidance for the pipeline industry on the use of hydrostatic testing as an integrity management tool with carbon steel mainline piping as the focus of this work. Selected hydrostatic testing principles considered herein may also be applicable to other forms of transmission and facility piping. At the time of this guideline development, several parallel pipeline industry initiatives with focus on hydrostatic testing have been recently completed, or are currently on-going. Such initiatives include work performed by the Pipeline and Hazardous Materials Safety Ad

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Thor, Peter, Karin Olsson, Håkan Wennhage, et al. Marina miljön i 8+fjordar – nuvarande kunskap om ekosystemet och de mänskliga belastningarna. Department of Aquatic Resources, Swedish University of Agricultural Sciences, 2023. http://dx.doi.org/10.54612/a.utn1p1g09m.

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8+fjordar-området är topografiskt väldigt varierande. Vattenutbytet är långsamt och tillförseln av näringsämnen stor. Största delen av näringsämnen stannar kvar i fjordarna. Mest i Havstens- och Hakefjordar där 40-50 % av den lokala näringstillförseln stannar kvar. Utsläppen från jordbruk och skogsbruk är stora i 8+fjordar-området. T.ex. står dessa för 62 % av kvävetillförseln och 69 % av fosfortillförseln till Byfjorden. Men utsläpp från punktkällor direkt till havet är också betydande (21 % av kvävetillförseln och 19 % av fosfortillförseln till Byfjorden). Man har genom en mängd olika tillta

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