Relevant bibliographies by topics / GaN MMIC Power Amplifiers

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  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'GaN MMIC Power Amplifiers'

Author: Grafiati
Published: 4 June 2021
Last updated: 13 February 2022

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Journal articles on the topic "GaN MMIC Power Amplifiers"

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Schuh, Patrick, Hardy Sledzik, Rolf Reber, Andreas Fleckenstein, Ralf Leberer, Martin Oppermann, Rüdiger Quay, et al. "X-band T/R-module front-end based on GaN MMICs." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 22, 2009): 387–94. http://dx.doi.org/10.1017/s1759078709990389.

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Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).
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Schmid, Ulf, Rolf Reber, Sébastien Chartier, Kristina Widmer, Martin Oppermann, Wolfgang Heinrich, Chafik Meliani, Rüdiger Quay, and Stephan Maroldt. "GaN devices for communication applications: evolution of amplifier architectures." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 85–93. http://dx.doi.org/10.1017/s1759078710000218.

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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency is 18.5%. Based on time domain simulations, loss mechanisms are identified and optimization steps are discussed.
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Schuh, Patrick, Hardy Sledzik, Rolf Reber, Kristina Widmer, Martin Oppermann, Markus Mußer, Matthias Seelmann-Eggebert, and Rudolf Kiefer. "GaN-based amplifiers for wideband applications." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 135–41. http://dx.doi.org/10.1017/s1759078710000152.

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Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for wideband high power amplifiers. The second application also needs high robust low noise amplifiers for its receive path. Output power levels of 38 W for hybrid amplifiers at lower frequencies up to 6 GHz and 15 W for the MMIC power amplifiers at higher frequencies are measured. With these building blocks, novel EW system approaches can be investigated.
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Gonzalez-Garrido, M. Angeles, Jesus Grajal, Pablo Cubilla, Claudio Lanzieri, and Antonio Cetronio. "Two Broadband GaN MMIC Power Amplifiers for EW Systems." Materials Science Forum 615-617 (March 2009): 975–78. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.975.

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This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These amplifiers have scalable output-stage periphery of 4 and 8 mm. The amplifiers are based on 1 mm AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They were fabricated in the European foundry SELEX Sistemi Integrati, which has a gate process technology of 0.5 μm. The 4 mm amplifier has exhibited an output power of 15 W and the 8 mm of 28 W at Vds=25 V in pulsed conditions. The best power performance in continuous wave are 10.5 W and 15 W for 4 mm and 8 mm, respectively. Better than 20% PAE over the 2-6 GHz frequency range is achieved in CW.
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van Heijningen, Marc, Jeroen A. Hoogland, Peter de Hek, and Frank E. van Vliet. "6–12 GHz double-balanced image-reject mixer MMIC in 0.25 µm AlGaN/GaN technology." International Journal of Microwave and Wireless Technologies 7, no. 3-4 (March 30, 2015): 307–15. http://dx.doi.org/10.1017/s1759078715000471.

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The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to enable a fully GaN-based front-end. In this paper, the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. First an introduction is given on the selection and dimensioning of the mixer core, in relation to the linearity and conversion loss. At the intermediate frequency (IF)-side of the mixer, an active balun has been used to compensate partly for the loss of the mixer. An on-chip local-oscillator (LO) signal amplifier has been incorporated so that the mixer can function with 0 dBm LO input power. After the discussion of the circuit design the measurement results are presented. The performance of the mixer core and passive elements has been demonstrated by measurements on a test-structure. The mixer MMIC measured conversion loss is <8 dB from 6 to 12 GHz, at 1 GHz IF and 0 dBm LO power. The measured image rejection is better than 30 dB.
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Gu, Liming, Wenquan Che, Fan-Hsiu Huang, and Hsien-Chin Chiu. "A high power active circulator using GaN MMIC power amplifiers." Journal of Semiconductors 35, no. 11 (November 2014): 115003. http://dx.doi.org/10.1088/1674-4926/35/11/115003.

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Kühn, Jutta, Markus Musser, Friedbert van Raay, Rudolf Kiefer, Matthias Seelmann-Eggebert, Michael Mikulla, Rüdiger Quay, Thomas Rödle, and Oliver Ambacher. "Design and realization of GaN RF-devices and circuits from 1 to 30 GHz." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 115–20. http://dx.doi.org/10.1017/s175907871000019x.

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The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.
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Gao, S., C. Sanabria, H. Xu, S. I. Long, S. Heikman, U. Mishra, and R. A. York. "MMIC class-F power amplifiers using field-plated GaN HEMTs." IEE Proceedings - Microwaves, Antennas and Propagation 153, no. 3 (2006): 259. http://dx.doi.org/10.1049/ip-map:20050246.

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Ouyang, Si Hua, Ming Zeng Peng, Jin Wu, Yan Kui Li, and Xin Yu Liu. "Multistage MMIC Power Amplifier Automatic Testing System." Applied Mechanics and Materials 241-244 (December 2012): 227–33. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.227.

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Based on GaN HEMT the monolithic microwave power amplifier (MMIC) with great advantages of high operating voltage, high output power, wide frequency bandwidth and small features loss has been widely used in phased-array radar, aerospace, missile interception system. However, MMIC test has many disadvantages, such as, including many microwave instruments, test process is complex, manual operate lots of instruments, and write down test data, result in slowed down test process. In the paper, it introduces a new system by ourselves. This can simplify the MMIC test process, and free ourselves from heavy test task, and focus the performance of circuit. It realizes the automatic test and proves it using a based on GaN HEMT 2×4 MMIC circuit.
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Al-Mozani, Dhamia, Andreas Wentzel, and Wolfgang Heinrich. "On Distortion in Digital Microwave Power Amplifiers." Frequenz 71, no. 1-2 (January 1, 2017): 11–17. http://dx.doi.org/10.1515/freq-2016-0096.

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Abstract In this paper, a first study of distortion in digital power amplifiers (PA) is presented. The work is based on a voltage mode class-S PA with a GaN MMIC for the 900 MHz frequency band. The investigation focuses on the quasi-static amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) distortions. Different digital modulation schemes are applied and studied versus output power back-off. This includes two pulse-width modulation (PWM) versions as well as band-pass delta-sigma (BPDS) modulation. The results are verified by measurement data.
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Dissertations / Theses on the topic "GaN MMIC Power Amplifiers"

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Seneviratne, Sashieka. "Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique." Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/23078.

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With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as ‘pico-cells’ are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are also presented. Overall, this thesis demonstrates the feasibility of an integrated HFET Doherty amplifier for LTE band 7 which entails the frequencies from 2.62-2.69GHz. The realization of the layout and various issues related to the PA design is discussed and attempted to be solved.
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Gholami, Mehrdad. "A C-Band Compact High Power Active Integrated Phased Array Transmitter Module Using GaN Technology." Thesis, Université d'Ottawa / University of Ottawa, 2017. http://hdl.handle.net/10393/36045.

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In this research, an innovative phased array antenna module is proposed to implement a high-power, high-efficient and compact C-band radio transmitter. The module configuration, which can be integrated into front-end circuits, was designed as planar layers stacked up together to form a metallic cube. The layers were fabricated by using a Computer Numerical Control (CNC) milling machine and screwed together. The antenna parts and the amplifier units were designed at two opposite sides of the cube to spread the dissipated heat produced by the amplifiers and act as a heat sink. Merging the antenna parts with the amplifier circuits offers additional advantages such as decreasing the total power loss, mass, and volume of the transmitter modules by removing the extra power divider and combiner networks and connectors between them as well as reducing the total signal path. To achieve both a maximum possible radiation efficiency and high directivity, the aperture waveguide antenna was selected as the array element. Four antenna elements have been located in a cavity to be excited equally and the cavity is excited through a slot on its underside so a compact subarray is formed. Antenna measurements demonstrated a 15.5 dBi gain and 20 dB return loss at 10 % fractional bandwidth centered around 5.8 GHz and with more than 98% radiation efficiency. The total dimensions of the subarray are approximately 8*12*4 cm3. The outcoming signal from the amplifiers is transferred into the slot exciting the subarray through a microstrip-to-waveguide transition (MWT). A novel and robust MWT structure was designed for the presented application. The MWT was also integrated with a microstrip coupler to monitor the power from the amplifier output. The measured insertion loss of the MWT along with the microstrip coupler was less than 0.25 dB along with more than 20 dB return loss within the same bandwidth of the subarray. The microstrip coupler shows 38 dB of coupling and more than 48 dB of isolation with negligible effects on the amplifier output signal and the insertion/return loss of the MWT. The amplifier subcomponents consist of power combiners/dividers (PCDs), high power amplifiers (HPAs) and bias circuitry. A Monolithic Microwave Integrated Circuit (MMIC) three-stage HPA was designed in a commercially available 0.15 um AlGaN/GaN HEMT technology provided by National Research Council Canada (NRC) and occupies an area of 4.7*3.7 mm2. To stabilize the HPA, a novel inductive degeneration technique was successfully used. To the best of the author’s knowledge, this is the first time this technique has been used to stabilize HPAs. Careful considerations on input/output impedances of all HEMTs were taken into account to prevent parametric oscillations. Other instability sources, i.e. odd-mode, even-mode, and low frequency (bias circuit) oscillations were also prevented by designing the required stabilization circuits. The electromagnetic simulation of the HPA shows 35 W (45.5 dBm) of saturated output power, 26 dB large signal gain and 29% power added efficiency within the same operating bandwidth as the subarray. The output distortion is less than 27 dB, indicating that the HPA is highly linear. The PCD was designed by utilizing a novel, enhanced configuration of a Gysel structure implemented on Rogers RT-Duroid5880. The insertion loss of the Gysel is less than 0.2 dB while return loss and isolation are greater than 20 dB over the entire bandwidth. The same subarray area (8*12 cm2) has been used for the amplifier circuits and up to eight HPAs can be included in each module. All the above parts of the transmitter module were fabricated and measured, except the MMIC-HPA.
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Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.

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Dupuy, Victor. "Conception et réalisation d'amplificateur de puissance MMIC large-bande haut rendement en technologie GaN." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0211/document.

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Ces travaux de thèse se concentrent sur la conception d'amplificateur de puissance MMIC large-bande haut rendement en technologie GaN pour des applications militaires de type radar et guerre électronique. Les objectifs principaux sont de proposer des structures innovantes de combinaison de puissance notamment pour réduire la taille des amplificateurs actuels tout en essayant d'améliorer leur rendement dans le même temps. Pour cela, une partie importante de ces travaux consiste au développement de combineurs de puissance ultra compactes et faibles pertes. Une fois ces combineurs réalisés et mesurés, ils sont intégrés dans des amplificateurs de puissance afin de prouver leur fonctionnalité et les avantages qu'ils apportent. Différents types d'amplificateur tant au niveau de l'architecture que desperformances sont réalisés au cours de ces travaux
This work focus on the design of wideband and high efficiency GaN MMIC high power amplifiers for military applications such as radar and electronic warfare. The main objectives consist in finding innovative power combining structures in order to decrease the overall size of amplifiers and increasing their efficiency at the same time. For these matters, an important part of this work consisted in the design and realization of ultra compact and low loss power combiners. Once the combiners realized and measured, they are integrated into power amplifiers to prove their functionality and the advantages they bring. Several kind of amplifiers have been realized whether regrind their architecture or their performances
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Ayad, Mohammed. "Etude et Conception d’amplificateurs DOHERTY GaN en technologie Quasi - MMIC en bande C." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0027.

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Ce travail répond à un besoin industriel accru en termes d’amplification des signaux sur porteuses à enveloppes variables utilisés par les systèmes de télécommunications actuels. Ces signaux disposent d’un fort PAPR et d’une distribution statistique d’enveloppe centrée en-deçà de la valeur crête d’enveloppe. La raison pour laquelle les industriels télécoms requièrent alors des amplificateurs de très fortes puissances de sortie, robustes, fiables et ayant une dépense énergétique optimale le long de la dynamique d’enveloppe associée à un niveau de linéarité acceptable. Ce document expose les résultats d’étude et de réalisation de deux Amplificateurs de Puissance Doherty (APD) à haut rendement encapsulés en boîtiers plastiques QFN. Le premier est un amplificateur Doherty symétrique classique (APD-SE) et le second est un amplificateur à deux entrées RF (APD-DE). Ces démonstrateurs fonctionnant en bande C sont fondés sur l’utilisation de la technologie Quasi-MMIC associant des barrettes de puissance à base des transistors HEMTs AlGaN/GaN sur SiC à des circuits d’adaptation en technologie ULRC. L’approche Quasi-MMIC associée à la solution d’encapsulation plastique QFN permettant une meilleure gestion des comportements thermiques offre des performances électriques similaires à celles de la technologie MMIC avec des coûts et des cycles de fabrication très attractifs. Durant ces travaux, une nouvelle méthode d’évaluation des transistors dédiés à la conception d’amplificateurs Doherty a été développée et mise en oeuvre. L’utilisation intensive des simulations électromagnétiques 2.5D et 3D a permis de bien prendre en compte les effets de couplages entre les différents circuits dans l’environnement du boîtier QFN. Les résultats des tests des amplificateurs réalisés fonctionnant sur une bande de 1GHz ont permis de valider la méthode de conception et ont montré que les concepts avancés associés à l’approche Quasi-MMIC ainsi qu’à des technologies d’encapsulation plastique, peuvent générer des fonctions micro-ondes innovantes. Les caractérisations de l’APD-DE ont relevé l’intérêt inhérent à la préformation des signaux d’excitation et des points de polarisation de chaque étage de l’amplificateur
This work responds to an increased industrial need for on carrier signals with variable envelope amplification used by current telecommunications systems. These signals have a strong PAPR and an envelope statistical distribution centred below the envelope peak value, the reason why the telecom industrialists then require a robust and reliable high power amplifiers having an energy expenditure along of the envelope dynamics associated with an acceptable level of linearity. This document presents the results of the study and realization of two, high efficiency, Doherty Power Amplifiers (DPA) encapsulated in QFN plastic packages. The first is a conventional Doherty power Amplifier (DPA-SE) and the second is a dual-input Doherty power amplifier (DPA-DE). These C-band demonstrators are based on the use of Quasi-MMIC technology combining power bars based on the AlGaN/GaN transistors on SiC to matching circuits in ULRC technology. The Quasi-MMIC approach combined with Quasi-MMIC approach combined with QFN plastic package solution for better thermal behaviour management offers electrical performances similar to those of MMIC technology with very attractive coasts and manufacturing cycles. During this work, a new evaluation method for the transistors dedicated to the design of DPA was developed and implemented. The intensive use of 2.5D and 3D electromagnetic simulations made it possible to take into account the coupling effects existing between the different circuits in the QFN package environment. The results of the tests of the amplifiers realised and operating on 1GHz bandwidth validated the design method and showed that the advanced concepts associated with the Quasi-MMIC approach as well as plastic encapsulation technologies can generate innovative microwave functions. The characterizations of the DPA-DE have noted the interest inherent in the preformation of the excitation signals and the bias points of each stage of the amplifier
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Rifi, Mohamed Aziz. "Etude et conception d’un amplificateur de puissance en technologie GaN MMIC fonctionnant en bande K adapté aux systèmes de suivi d’enveloppe." Thesis, Limoges, 2021. http://www.theses.fr/2021LIMO0019.

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Ces travaux de thèse s’intègrent dans le cadre du processus d’amélioration continue de l’efficacité et de la linéarité des amplificateurs de puissance en présence des signaux sur porteuses modulées utilisés par les systèmes de télécommunications modernes.Ces signaux présentent un PAPR élevé et une distribution statistique d’enveloppe centrée en-deçà de la valeur crête d’enveloppe. De ce fait, les amplificateurs de puissance conventionnel (classe AB à polarisation fixe) sont souvent surdimensionnés pour répondre aux besoins des industriels télécoms. La technique de suivi d’enveloppe a été utilisée pour augmenter la PAE le long de l’OBO (10 dB pour LTE) tout en gardant un gain en puissance constant associé à une bonne linéarité en termes de conversion d’AM/AM. Une méthode de conception d’amplificateur de puissance en technologie MMIC fondé sur l’utilisation des HEMTs GaN a été développée et utilisée pour concevoir un AP délivrant une puissance de sortie de 4W et fonctionnant en bande K [17-20GHz]. L’AP réalisé a été ensuite couplé à un modulateur numérique de polarisation de drain. L’ensemble AP et modulateur de polarisation constituant un système de suivi d’enveloppe appelé APSE a été caractérisé en termes d’efficacité et de linéarité en présence de signaux modulés. L’APSE montre des performances très intéressantes comparées à celles obtenue avec un AP à polarisation fixe. En effet à un OBO de l’ordre de 7dB, dans la bande [17-20GHz], la PAE est améliorée de [10-7.5 points]. La PAE moyenne le long de l’OBO varie entre 32 et 36% sur la bande considérée et elle est associée à une EVM variant entre 5 à 1.6% avec une DPD quasi-statique appliquée au signal en bande de base. Les caractérisations de l’APSE ont démontré l’intérêt de l’utilisation des amplificateurs de puissance à suivi d’enveloppe dans les systèmes de télécommunications modernes
This thesis work is part of the process of continuous improvement of the efficiency and linearity of power amplifiers in presence of signals on modulated carriers used in modern telecommunications systems. These signals have a high PAPR and a statistical envelope distribution centered below the envelope peak value. As a result, conventional power amplifiers (Class AB fixed bias) are often oversized to meet the needs of the telecom industry. The envelope tracking technique has been used to increase the PAE along the OBO (10 dB for LTE) while maintaining a constant power gain associated to a good linearity in terms of AM/AM conversion. A power amplifier design method in MMIC technology based on the use of GaN HEMTs has been developed and is used to design an APdelivering an output power of 4W and operating in K-band [17-20GHz]. The realized APwas then coupled to a digital drain bias modulator. The APand bias modulator assembly constituting an envelope tracking system called APSE was characterized in terms of efficiency and linearity in presence of modulated signals. The APSE shows very interesting performances compared to those obtained with a fixed bias AP. Indeed, at an OBO of about 7dB, in the [17-20GHz] band, the PAE is improved by [10-7.5]. The average PAE along the OBO varies between 32 and 36% over the considered band and it is associated to an EVM varying between 5 and 1.6% with a quasi-static DPD applied to the baseband signal.The characterizations of APSE have demonstrated the interest of the use of envelope tracking power amplifiers in modern telecommunications systems
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Azam, Sher. "Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes." Licentiate thesis, Linköping : Department of Physics, Chemistry and Biology, Linköpings universitet, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11786.

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Markos, Asdesach Zena. "Efficiency enhancement of linear GaN RF power amplifiers using the Doherty technique." Kassel Kassel Univ. Press, 2008. http://d-nb.info/99160427X/04.

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Gomes, Jorge Miguel Abrantes de Almeida. "GaN power amplifier for satellite communications." Master's thesis, Universidade de Aveiro, 2014. http://hdl.handle.net/10773/13704.

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Mestrado em Engenharia Electrónica e Telecomunicações
The satellite communications have become a valid alternative to conventional communications, through fiber or copper, in situations of catastrophe or even as complement to improve the quality of the services provided at a worldwide scale. Recently, radio frequency engineers have worked towards a reliable solution to replace the travelling wave tube amplifiers on board of the satellite communications. Despite the travelling wave tube amplifiers reveal a good performance, its weight, size and cost are a serious technical problem to the main satellite manufacturers. However, this scenario tends to change due to the exploitation of the Gallium Nitride technology in high power, efficiency and frequency applications. The objective of this work involves an implementation of two power amplifiers in class B, resorting to a Gallium Nitride transistors and using different types of planar transmission lines, for a 5.8GHz frequency which is often used in uplink transmissions for C-band or even in recent applications of wireless power transmission. The best results were obtained for the microstrip lines power amplifier, achieving 34.1dBm of output power, 62.35% of drain efficiency at saturation and a small-gain of 17dB.
As comunicações via satélite têm-se tornado uma alternativa válida às vias de comunicações convencionais, como a fibra e o cobre, em situações de catástrofe ou até como complemento para melhorar a qualidade de serviços disponibilizados à escala global. Recentemente, os engenheiros de rádio frequência têm trabalhado para encontrar uma solução definitiva e fiável para a substituição dos amplificadores a válvulas nos satélites de comunicações. Apesar destes amplificadores apresentarem uma performance de destaque, o seu tamanho, peso, consumo e custo são sérios problemas para as empresas especializadas na sua construção. Contudo, o panorama tende a mudar devido à exploração da tecnologia de Nitreto de Gálio em aplicações de alta potência, frequência e eficiência. O objetivo desta trabalho passa pela implementação de dois amplificadores de potência em classe B, recorrendo a transístores de Nitreto de Gálio e usando diferentes linhas de transmissão planares, para a frequência de 5.8GHz que é frequentemente usada em transmissões uplink na banda C, ou mesmo nas recentes aplicações de transferência de energia sem fios. Os melhores resultados foram obtidos pela implementação em linhas microstrip, atingindo os 34.1dBm de potência de saída, 62.35% de eficiência na saturação e um ganho máximo de 17dB.
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Keogh, David Martin. "Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers." Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3237565.

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Thesis (Ph. D.)--University of California, San Diego, 2006.
Title from first page of PDF file (viewed December 13, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.
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Books on the topic "GaN MMIC Power Amplifiers"

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United States. National Aeronautics and Space Administration., ed. Ku-band high efficiency GaAs mmic power amplifiers. [Washington, DC: National Aeronautics and Space Administration, 1988.

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United States. National Aeronautics and Space Administration., ed. Ku-band high efficiency GaAs mmic power amplifiers. [Washington, DC: National Aeronautics and Space Administration, 1988.

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Ku-band high efficiency GaAs mmic power amplifiers. [Washington, DC: National Aeronautics and Space Administration, 1988.

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J, Achatz Robert, Luo Ye, and United States. National Telecommunications and Information Administration, eds. Nonlinear operation of a MMIC RF power amplifier and its effects on battery current, interference, and link margin. [Boulder, Colo.]: U.S. Dept. of Commerce, National Telecommunications and Information Administration, 2000.

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K-band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Quen, Tserng Hua, and Lewis Research Center, eds. K-band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Quen, Tserng Hua, Lewis Research Center, and United States. National Aeronautics and Space Administration., eds. K-band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Quen, Tserng Hua, Lewis Research Center, and United States. National Aeronautics and Space Administration., eds. K-band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Book chapters on the topic "GaN MMIC Power Amplifiers"

1

Perreault, David J., Charles R. Sullivan, and Juan M. Rivas. "GaN in Switched-Mode Power Amplifiers." In Integrated Circuits and Systems, 181–223. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2_8.

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Sajedin, Maryam, Issa Elfergani, Abubakar Sadiq Hussaini, Jonathan Rodriguez, Ayman Radwan, and Raed Abd-Alhameed. "Design of Asymmetrical Doherty GaN HEMT Power Amplifiers for 4G Applications." In Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, 455–65. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-05195-2_45.

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Gonzalez-Garrido, Maria-Angeles, and Jesus Grajal. "Broadband GaN MMIC Power Amplifiers design." In Microwave and Millimeter Wave Technologies Modern UWB antennas and equipment. InTech, 2010. http://dx.doi.org/10.5772/9028.

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Ang, Chin Guek. "The Design and Modeling of 2.4 and 3.5 GHz MMIC PA." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems, 105–56. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch006.

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This chapter discusses the design of MMIC power amplifiers for wireless application by using 0.15 µm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 µm and 10 fingers at 2.4 GHz and 3.5 GHz. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB compression power with 12.318% power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB compression power with 11.796% power-added efficiency (PAE). The 2.4 GHz power amplifier can be applied for Wireless LAN applications such as WiFi and WPAN whereas 3.5 GHz power amplifier for WiMax base station.
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"Class D Audio Amplifiers." In GaN Transistors for Efficient Power Conversion, 269–79. Chichester, UK: John Wiley & Sons, Ltd, 2019. http://dx.doi.org/10.1002/9781119594406.ch12.

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Ng, Wan Yeen, and Xhiang Rhung Ng. "The Design and Modeling of 30 GHz Microwave Front-End." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems, 205–38. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch009.

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This chapter aims to discuss a millimeter wave integrated circuit (MMWIC) in frequency of 30 GHz especially switch (SPDT), medium power amplifier (MPA) and low noise amplifier (LNA). The switch is developed using a commercial 0.15 µm GaAs pHEMT technology. It achieves low loss and high isolation for millimeter wave applications. The circuit and layout drawing of SPDT switch are done by using Advanced Design System (ADS) software. The layout is verified by running the Design Rules Check (DRC) to check and clear all the errors. At the operating frequency of 30 GHz, the reported SPDT switch has 1.470 dB insertion loss and 37.455 dB of isolation. It also demonstrates 26.00 dBm of input P1dB gain compression point (P1dB) and 22.975 dBm of output P1dB. At a supply voltage of 3.0 V and 30 GHz operating frequency, this two-stage LNA achieves an associated gain of 21.628 dB, noise figure (NF) of 2.509 dB and output referred 1-dB compression point (P1dB) of -11.0 dBm, the total power consumptions for the LNA is 174 mW. At a supply voltage of 6.0 V and 30 GHz operating frequency, a 2-stage MPA achieves a linear gain (S21) of 13.236 dB, P1dB of 22.5 dBm, power gain of 11.055 dB and the PAE of 14.606%. The total power consumption for the MPA is 1.122 W. The 30 GHz LNA and PA can be applied in direct broadcast satellite (DBS), automotive radar transmitter and receiver.
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Kistchinsky, Andrey. "Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products." In Ultra Wideband Communications: Novel Trends - System, Architecture and Implementation. InTech, 2011. http://dx.doi.org/10.5772/16590.

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Mabrouk, Mohamed. "RF and Microwave Test of MMICs from Qualification to Mass Production." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems, 333–45. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch011.

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This chapter describes some basic characteristic responses that must be known for each Monolithic Microwave Integrated Circuits. The main parameters such Return Loss, Insertion Losses or Gain, Power at 1dB compression, InterModulation Products or Noise Figure are very important and have to be measured before using the device in final applications. Basic rules of Test and Measurement in RF and Microwaves, as well for characterization on benches as for high volume production using Automatic Test Equipments installed in test platforms, are summarized for helping today’s test engineers to develop their own test solutions. The device, that was characterized on bench and tested in production environment, is a monolithic, integrated low noise amplifier (LNA) and mixer usable in RF receiver Front-End applications for Personal Communications functioning on frequency wideband between 0.1 and 2.0 GHz.
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Jarndal, Anwar. "Large-Signal Modeling of GaN Devices for Designing High Power Amplifiers of Next Generation Wireless Communication Systems." In Mobile and Wireless Communications Network Layer and Circuit Level Design. InTech, 2010. http://dx.doi.org/10.5772/7706.

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Marzuki, Arjuna. "Inventions of Monolithic Microwave Integrated Circuits." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems, 240–332. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch010.

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This chapter deals with the concept of first time right IC. A development of subsystems for wireless application is used as test case. The subsystems are Low Noise Amplifier (LNA), Medium Power Amplifier (MPA) and Variable Signal Generator (VSG). Several issues such as suitable multiband design flow and high speed switch must be solved. A new design methodology of integrated circuits for multiband application is presented. The design methodology is modified from a typical Monolithic Microwave Integrated Circuit (MMIC) flow. Core based design, parasitic aware approach and power constrained optimization are introduced into the new design flow. The same core circuit topology is used as main block to design 2.4 GHz and 3.5 GHz LNA and MPA. A power constrained optimization is applied to a test case amplifier i.e. broadband amplifier to get the optimized RF performance. The optimization is simulation-based technique. A 0.15 µm 85 GHz PHEMT is used in designing the LNA, MPA and broadband amplifier. This chapter also introduces the inventions of Voltage Controlled Oscillator (VCO), Mixer, Low Noise Amplifiers (LNA), Power Amplifiers (PA) and Transmit-Receive Switch (T/R). These circuits are crucial components for RF and Microwave front-end integrated circuits. The elements of inventions of circuits are clearly explained. The inventions reflect the requirement or the need of solving current problem using available technology.
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Conference papers on the topic "GaN MMIC Power Amplifiers"

1

Suijker, Erwin M., Mattias Sudow, Martin Fagerlind, Niklas Rorsman, A. P. de Hek, and F. E. van Vliet. "GaN MMIC Power Amplifiers for S-band and X-band." In 2008 38th European Microwave Conference (EuMC). IEEE, 2008. http://dx.doi.org/10.1109/eumc.2008.4751447.

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Piacibello, Anna, Ferdinando Costanzo, Rocco Giofre, David Hayes, Roberto Quaglia, and Vittorio Camarchia. "GaN Doherty MMIC Power Amplifiers for Satellite Ka-band Downlink." In 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC). IEEE, 2020. http://dx.doi.org/10.1109/inmmic46721.2020.9160047.

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Jee, Seunghoon, Juyeon Lee, Bonghyuk Park, Cheol Ho Kim, and Bumman Kim. "GaN MMIC broadband Doherty power amplifier." In 2013 Asia Pacific Microwave Conference - (APMC 2013). IEEE, 2013. http://dx.doi.org/10.1109/apmc.2013.6694878.

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Lee, Juyeon, Seunghoon Jee, Bonghyuk Park, Cheol Ho Kim, and Bumman Kim. "GaN MMIC broadband saturated power amplifier." In 2013 Asia Pacific Microwave Conference - (APMC 2013). IEEE, 2013. http://dx.doi.org/10.1109/apmc.2013.6694879.

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Moon, J. S., H. Moyer, P. Macdonald, D. Wong, M. Antcliffe, M. Hu, P. Willadsen, et al. "High efficiency X-band class-E GaN MMIC high-power amplifiers." In 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR). IEEE, 2012. http://dx.doi.org/10.1109/pawr.2012.6174909.

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Gao, Steven, Hongtao Xu, Umesh K. Mishra, and Robert A. York. "MMIC Class-F Power Amplifiers using Field-Plated AlGaN/GaN HEMTs." In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319884.

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Litchfield, Michael, Scott Schafer, Tibault Reveyrand, and Zoya Popovic. "High-efficiency X-Band MMIC GaN power amplifiers operating as rectifiers." In 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014. IEEE, 2014. http://dx.doi.org/10.1109/mwsym.2014.6848394.

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Zai, Andrew, Dongxue Li, Scott Schafer, and Zoya Popovic. "High-efficiency X-band MMIC GaN power amplifiers with supply modulation." In 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014. IEEE, 2014. http://dx.doi.org/10.1109/mwsym.2014.6848545.

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Gonzalez-Garrido, M. Angeles, Jesus Grajal, Pablo Cubilla, Antonio Cetronio, Claudio Lanzieri, and Mike Uren. "2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications." In 2008 European Microwave Integrated Circuit Conference (EuMIC). IEEE, 2008. http://dx.doi.org/10.1109/emicc.2008.4772234.

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Niida, Yoshitaka, Yoichi Kamada, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yuichi Minoura, Naoya Okamoto, Masaru Sato, Kazukiyo Joshin, and Keiji Watanabe. "3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier." In 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR). IEEE, 2016. http://dx.doi.org/10.1109/pawr.2016.7440153.

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Reports on the topic "GaN MMIC Power Amplifiers"

1

Penn, John E. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers. Fort Belvoir, VA: Defense Technical Information Center, December 2012. http://dx.doi.org/10.21236/ada571906.

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Ozalas, Matthew T. High Efficiency Class-F MMIC Power Amplifiers at Ku-Band. Fort Belvoir, VA: Defense Technical Information Center, January 2005. http://dx.doi.org/10.21236/ada456277.

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Penn, John E. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers (Part 2). Fort Belvoir, VA: Defense Technical Information Center, July 2013. http://dx.doi.org/10.21236/ada585852.

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Kurtz, Steven Ross, David Martin Follstaedt, Alan Francis Wright, Albert G. Baca, Ronald D. Briggs, Paula Polyak Provencio, Nancy A. Missert, et al. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers. Office of Scientific and Technical Information (OSTI), December 2005. http://dx.doi.org/10.2172/883465.

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