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Journal articles on the topic 'GaN MMIC Power Amplifiers'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

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1

Schuh, Patrick, Hardy Sledzik, Rolf Reber, Andreas Fleckenstein, Ralf Leberer, Martin Oppermann, Rüdiger Quay, et al. "X-band T/R-module front-end based on GaN MMICs." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 22, 2009): 387–94. http://dx.doi.org/10.1017/s1759078709990389.

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Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

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2

Schmid, Ulf, Rolf Reber, Sébastien Chartier, Kristina Widmer, Martin Oppermann, Wolfgang Heinrich, Chafik Meliani, Rüdiger Quay, and Stephan Maroldt. "GaN devices for communication applications: evolution of amplifier architectures." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 85–93. http://dx.doi.org/10.1017/s1759078710000218.

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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency is 18.5%. Based on time domain simulations, loss mechanisms are identified and optimization steps are discussed.

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3

Schuh, Patrick, Hardy Sledzik, Rolf Reber, Kristina Widmer, Martin Oppermann, Markus Mußer, Matthias Seelmann-Eggebert, and Rudolf Kiefer. "GaN-based amplifiers for wideband applications." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 135–41. http://dx.doi.org/10.1017/s1759078710000152.

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Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for wideband high power amplifiers. The second application also needs high robust low noise amplifiers for its receive path. Output power levels of 38 W for hybrid amplifiers at lower frequencies up to 6 GHz and 15 W for the MMIC power amplifiers at higher frequencies are measured. With these building blocks, novel EW system approaches can be investigated.

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4

Gonzalez-Garrido, M. Angeles, Jesus Grajal, Pablo Cubilla, Claudio Lanzieri, and Antonio Cetronio. "Two Broadband GaN MMIC Power Amplifiers for EW Systems." Materials Science Forum 615-617 (March 2009): 975–78. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.975.

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This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These amplifiers have scalable output-stage periphery of 4 and 8 mm. The amplifiers are based on 1 mm AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They were fabricated in the European foundry SELEX Sistemi Integrati, which has a gate process technology of 0.5 μm. The 4 mm amplifier has exhibited an output power of 15 W and the 8 mm of 28 W at Vds=25 V in pulsed conditions. The best power performance in continuous wave are 10.5 W and 15 W for 4 mm and 8 mm, respectively. Better than 20% PAE over the 2-6 GHz frequency range is achieved in CW.

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5

van Heijningen, Marc, Jeroen A. Hoogland, Peter de Hek, and Frank E. van Vliet. "6–12 GHz double-balanced image-reject mixer MMIC in 0.25 µm AlGaN/GaN technology." International Journal of Microwave and Wireless Technologies 7, no. 3-4 (March 30, 2015): 307–15. http://dx.doi.org/10.1017/s1759078715000471.

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The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to enable a fully GaN-based front-end. In this paper, the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. First an introduction is given on the selection and dimensioning of the mixer core, in relation to the linearity and conversion loss. At the intermediate frequency (IF)-side of the mixer, an active balun has been used to compensate partly for the loss of the mixer. An on-chip local-oscillator (LO) signal amplifier has been incorporated so that the mixer can function with 0 dBm LO input power. After the discussion of the circuit design the measurement results are presented. The performance of the mixer core and passive elements has been demonstrated by measurements on a test-structure. The mixer MMIC measured conversion loss is <8 dB from 6 to 12 GHz, at 1 GHz IF and 0 dBm LO power. The measured image rejection is better than 30 dB.

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6

Gu, Liming, Wenquan Che, Fan-Hsiu Huang, and Hsien-Chin Chiu. "A high power active circulator using GaN MMIC power amplifiers." Journal of Semiconductors 35, no. 11 (November 2014): 115003. http://dx.doi.org/10.1088/1674-4926/35/11/115003.

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7

Kühn, Jutta, Markus Musser, Friedbert van Raay, Rudolf Kiefer, Matthias Seelmann-Eggebert, Michael Mikulla, Rüdiger Quay, Thomas Rödle, and Oliver Ambacher. "Design and realization of GaN RF-devices and circuits from 1 to 30 GHz." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 115–20. http://dx.doi.org/10.1017/s175907871000019x.

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The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

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8

Gao, S., C. Sanabria, H. Xu, S. I. Long, S. Heikman, U. Mishra, and R. A. York. "MMIC class-F power amplifiers using field-plated GaN HEMTs." IEE Proceedings - Microwaves, Antennas and Propagation 153, no. 3 (2006): 259. http://dx.doi.org/10.1049/ip-map:20050246.

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9

Ouyang, Si Hua, Ming Zeng Peng, Jin Wu, Yan Kui Li, and Xin Yu Liu. "Multistage MMIC Power Amplifier Automatic Testing System." Applied Mechanics and Materials 241-244 (December 2012): 227–33. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.227.

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Based on GaN HEMT the monolithic microwave power amplifier (MMIC) with great advantages of high operating voltage, high output power, wide frequency bandwidth and small features loss has been widely used in phased-array radar, aerospace, missile interception system. However, MMIC test has many disadvantages, such as, including many microwave instruments, test process is complex, manual operate lots of instruments, and write down test data, result in slowed down test process. In the paper, it introduces a new system by ourselves. This can simplify the MMIC test process, and free ourselves from heavy test task, and focus the performance of circuit. It realizes the automatic test and proves it using a based on GaN HEMT 2×4 MMIC circuit.

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10

Al-Mozani, Dhamia, Andreas Wentzel, and Wolfgang Heinrich. "On Distortion in Digital Microwave Power Amplifiers." Frequenz 71, no. 1-2 (January 1, 2017): 11–17. http://dx.doi.org/10.1515/freq-2016-0096.

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Abstract In this paper, a first study of distortion in digital power amplifiers (PA) is presented. The work is based on a voltage mode class-S PA with a GaN MMIC for the 900 MHz frequency band. The investigation focuses on the quasi-static amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) distortions. Different digital modulation schemes are applied and studied versus output power back-off. This includes two pulse-width modulation (PWM) versions as well as band-pass delta-sigma (BPDS) modulation. The results are verified by measurement data.

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11

Piotrowicz, Stéphane, Erwan Morvan, Raphaël Aubry, Guillaume Callet, Eric Chartier, Christian Dua, Jérémy Dufraisse, et al. "Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 105–14. http://dx.doi.org/10.1017/s1759078710000061.

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The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.

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12

Quaglia, Roberto, Vittorio Camarchia, Marco Pirola, Jorge Julian Moreno Rubio, and Giovanni Ghione. "Linear GaN MMIC Combined Power Amplifiers for 7-GHz Microwave Backhaul." IEEE Transactions on Microwave Theory and Techniques 62, no. 11 (November 2014): 2700–2710. http://dx.doi.org/10.1109/tmtt.2014.2359856.

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13

Makri, R., M. Gargalakos, and N. K. Uzunoglu. "Design and Development of Monolithic Microwave Integrated Amplifiers and Coupling Circuits for Telecommunication Systems Applications." Active and Passive Electronic Components 25, no. 1 (2002): 1–22. http://dx.doi.org/10.1080/08827510211275.

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Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuits result to the increasing use of MMICs in telecommunication systems. At Microwave and Fiber Optics Lab of NTUA several designs of various MMICs were conducted using the HP Eesof CAD Tool and FET and HEMT models of F20 and H40 GaAs foundry process of GEC Marconi. The designed MMICs are constructed in Europractice Organization while on-wafer probe measurements are performed in the Lab. In that framework, MMIC technologies are employed in the design of power and low noise amplifiers and couplers to be used for mobile and wireless communications as well as remote sensing and radar applications. A medium power linear FET amplifier has been designed with combining techniques on a single chip. The circuit operates at 14.4–15.2 GHz with an input power of−15dB m, a 36 dB total gain, while the input and output VSWR is less than 1.6. Due to high cost of MMIC fabrication only the first subunit was manufactured and tests verified the simulation results. Additionally, novel techniques have been used for the design of two coupling networks at 10 GHz in order to minimize the area occupied. A meander-kind design as well as shunt capacitors were implemented for a90°quadrature coupler and a Wilkinson one in order to reduce size. Finally, a two stages low noise amplifier was designed with the use of H40 GaAs process in order the differences between the relevant designs to be explored. The key specifications for this MMIC LNA include operation at 10 GHz with a total gain of 17 dB while the noise figure is less than 1.5 dB.

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14

SCHLECHTWEG, M. "HIGH FREQUENCY CIRCUITS BASED ON GaAs PHEMT TECHNOLOGY FOR MODERN SENSOR AND COMMUNICATION SYSTEMS." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 393–411. http://dx.doi.org/10.1142/s0129156400000404.

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For sensor and communication system applications, monolithic microwave integrated circuits (MMICs) feature performance, functionality, reliability, and competitive price. In this paper, the potential of PHEMT ICs for communication and sensor applications up to 100 GHz is discussed. Specifically, I will address the application of coplanar waveguide technology for rf ICs, millimeter-wave multifunctional ICs and power amplifiers, as well as mixed-signal ICs and OEICs. A 77-GHz transceiver MMIC designed for automotive collision avoidance radar is presented as an example of a very compact, multifunctional mm-wave chip. A chip set for active and passive imaging at 94 GHz includes low noise and high gain amplifiers, low phase noise oscillators, and phase shifters. An FMCW module is conceived for material characterization. A family of coplanar power amplifier MMICs for wireless communication in the range of 20 to 60 GHz with output powers up to 1 W is presented. Finally, integrated circuits for high-speed data transmission at 40 Gbit/s will be discussed.

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15

Lee, Sang-Heung, Seong-Il Kim, Ho-Kyun Ahn, Jong-Min Lee, Dong-Min Kang, Dong Yung Kim, Haecheon Kim, et al. "ETRI 0.25 μm GaN MMIC Process and X-Band Power Amplifier MMIC." Journal of Korean Institute of Electromagnetic Engineering and Science 28, no. 1 (January 2017): 1–9. http://dx.doi.org/10.5515/kjkiees.2017.28.1.1.

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16

Maroldt, Stephan, Rüdiger Quay, Christian Haupt, Rudolf Kiefer, Dirk Wiegner, and Oliver Ambacher. "GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz." International Journal of Microwave and Wireless Technologies 3, no. 3 (April 19, 2011): 319–27. http://dx.doi.org/10.1017/s1759078711000304.

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This work describes the integration of Schottky diodes into fast GaN MMIC process technology suitable for the realization of switch-mode power amplifier core chips for class-S operation at 2 GHz. With the demonstration of this technology, the so-called third-quadrant issue, which reduces the efficiency in band pass-Δ-Σ class-S operation can be diminished on device level. Compared to a hybrid diode assembly, the broadband properties of the amplifier module with on-chip-integrated diode can be improved by the reduction of parasitic losses. The GaN heterostructure field effect transistors (HFETs) with integrated series diode show a cut-off frequency of 28 GHz with drain breakdown voltages exceeding −100 and +100 V and comparable large signal performance to conventional GaN HFETs at 10 GHz. MMIC core chips for class-D and class-S switch-mode power amplifier modules are demonstrated for the operation at mobile communication frequencies between 0.45 and 2 GHz and signal bit rates up to 8 Gbps. The circuits yield broadband output power levels between 4 and 9 W with efficiencies of up to 80%.

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17

Florian, Corrado, Tommaso Cappello, Daniel Niessen, Rudi Paolo Paganelli, Scott Schafer, and Zoya Popovic. "Efficient Programmable Pulse Shaping for $X$ -Band GaN MMIC Radar Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 65, no. 3 (March 2017): 881–91. http://dx.doi.org/10.1109/tmtt.2016.2631171.

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18

UEDA, TETSUZO, YASUHIRO UEMOTO, TSUYOSHI TANAKA, and DAISUKE UEDA. "GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 145–52. http://dx.doi.org/10.1142/s0129156409006199.

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We review our state-of-the-art GaN -based device technologies for power switching at low frequencies and for future millimeter-wave communication systems. These two applications are emerging in addition to the power amplifiers at microwave frequencies which have been already commercialized for cellular base stations. Technical issues of the power switching GaN device include lowering the fabrication cost, normally-off operation and further increase of the breakdown voltages extracting full potential of GaN -based materials. We establish flat and crack-free epitaxial growth of GaN on Si which can reduce the chip cost. Our novel device structure called Gate Injection Transistor (GIT) achieves normally-off operation with high enough drain current utilizing conductivity modulation. Here we also present the world highest breakdown voltage of 10400V in AlGaN / GaN HFETs. In this paper, we also present high frequency GaN -based devices for millimeter-wave applications. Short-gate MIS-HFETs using in-situ SiN as gate insulators achieve high fmax up to 203GHz. Successful integration of low-loss microstrip lines with via-holes onto sapphire enables compact 3-stage K -band amplifier MMIC of which the small-signal gain is as high as 22dB at 26GHz. The presented devices are promising for the two future emerging applications demonstrating high enough potential of GaN -based transistors.

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19

Bae, Kyung-Tae, Ik-Joon Lee, Hyun-Seok Kang, and Dong-Wook Kim. "2~16 GHz GaN Nonuniform Distributed Power Amplifier MMIC." Journal of Korean Institute of Electromagnetic Engineering and Science 27, no. 11 (October 30, 2016): 1019–22. http://dx.doi.org/10.5515/kjkiees.2016.27.11.1019.

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20

Berrached, Chamssedine, Diane Bouw, Marc Camiade, Kassem El-Akhdar, Denis Barataud, and Guillaume Neveux. "Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1–4 GHz range." International Journal of Microwave and Wireless Technologies 7, no. 1 (June 9, 2014): 1–12. http://dx.doi.org/10.1017/s1759078714000476.

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In this paper, the designs and experimental performances of wideband (higher than one octave) high-efficiency, high-power amplifiers (HPA) working in the 1–4 GHz range, using the same GaN process, are presented. They are based on the Bode–Fano integrals, which can be applied to a trade-off calculation between bandwidth and efficiency. Firstly, an microwave intregrated circuits (MIC) wideband HPA, externally matched, is presented. It generates a continuous wave (CW) output power (Pout) greater than 40 W, a power gain (GP) higher than 9.2 dB and a corresponding power added efficiency (PAE) (drain efficiency (DE)) ranged between 36 and 44% (40 and 48%) over the 1–3 GHz bandwidth. Two other amplifiers have been designed upon the same theoretical methodology, with a passive GaAs MMIC circuit technology, enabling to reduce the final size down to 420 mm2. The first internally matched Quasi monolithic microwave intergrated circuits (Quasi-MMIC) single-ended HPA generates a pulsed Pout greater than 25 W, GP higher than 9.8 dB, and a corresponding PAE (DE) ranged between 37 and 52.5% (40 and 55%) over the 2–4 GHz bandwidth. The second internally matched Quasi-MMIC HPA, based on balanced architecture, generates a pulsed Pout higher than 45 W, GP higher than 9.5 dB and PAE (DE) ranged between 33 and 44% (38 and 50%) over the 2–4 GHz bandwidth. These results are among the best ones published in terms of PAE and Pout in instantaneous octave bandwidth in the 1–4 GHz frequency range.

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21

Nikandish, Gholamreza, Robert Bogdan Staszewski, and Anding Zhu. "Design of Highly Linear Broadband Continuous Mode GaN MMIC Power Amplifiers for 5G." IEEE Access 7 (2019): 57138–50. http://dx.doi.org/10.1109/access.2019.2914563.

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22

Quay, R., R. Kiefer, F. van Raay, R. Reiner, O. Kappeler, S. Müller, M. Dammann, et al. "GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate." physica status solidi (c) 3, no. 3 (March 2006): 473–77. http://dx.doi.org/10.1002/pssc.200564167.

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23

Duffy, Maxwell Robert, Gregor Lasser, and Zoya Popović. "Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA." International Journal of Microwave and Wireless Technologies 12, no. 8 (July 1, 2020): 707–15. http://dx.doi.org/10.1017/s1759078720000847.

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AbstractThis paper presents a high-efficiency linear GaN K-band transmitter for broadband high peak-average power ratio (PAPR) signals. A GaN MMIC 18.5–24 GHz three-stage power amplifier with over 4 W peak output power, 20 dB saturated gain, and 40% peak PAE is supply-modulated with a four-level discrete dynamic supply GaN MMIC. For 100 MHz signals with ${\rm PAPR}\gt 10\, {\rm dB}$, we demonstrate an average efficiency improvement from 14 to 20% with a simultaneous linearity improvement in noise power ratio (NPR) from 23 to 26 dB through a shaping function focused on gain linearization. For 250 MHz signal bandwidth, there is no observed degradation in NPR and the efficiency is improved by 5 percentage points. For discrete supply modulation, the switching transients between levels are experimentally investigated for wideband signals.

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24

Ge, Qin, Xinyu Liu, Yingkui Zheng, and Chuan Ye. "A flat gain GaN MMIC power amplifier for X band application." Journal of Semiconductors 35, no. 12 (December 2014): 125004. http://dx.doi.org/10.1088/1674-4926/35/12/125004.

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Giofrè, Rocco, Paolo Colantonio, Franco Giannini, Chiara Ramella, Vittorio Camarchia, Mustazar Iqbal, Marco Pirola, and Roberto Quaglia. "A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links." International Journal of Microwave and Wireless Technologies 8, no. 4-5 (February 11, 2016): 673–81. http://dx.doi.org/10.1017/s175907871600012x.

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A combined class-AB and a Doherty power amplifier conceived for microwave backhaul in the 7 GHz frequency band are here presented and compared. They are fabricated in the same GaN monolithic process and have identical total active device periphery. For the given application, the linearity-efficiency trade-off for the two architectures is discussed. The two modules have been thoroughly characterized in linear and non-linear continuous wave conditions. Then, to evaluate linearity under the actual operative conditions, a system level characterization has been carried out, applying a modulated input signal and comparing the spectral responses of the two amplifiers with and without digital predistortion. A saturated output power of 40 dBm has been achieved by both circuits. At 6 dB of output back-off, the Doherty amplifier shows an efficiency of 33%, 10 points higher than that of the class-AB module. On the other hand, system level measurements show that, adopting the same predistorter complexity to comply with the reference standard emission masks, the Doherty amplifier needs at least 1 dB of extra back-off. This negatively affects its efficiency, therefore reducing the advantages it can claim with respect to the class-AB amplifier in continuous wave condition.

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Giofre, Rocco, Paolo Colantonio, and Franco Giannini. "X-band MMIC GaN power amplifier for SAR systems." Microwave and Optical Technology Letters 55, no. 11 (August 26, 2013): 2611–16. http://dx.doi.org/10.1002/mop.27852.

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27

Camarchia, Vittorio, Marco Pirola, and Roberto Quaglia. "Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios." Micromachines 5, no. 3 (September 12, 2014): 711–21. http://dx.doi.org/10.3390/mi5030711.

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28

Camarchia, Vittorio, Jorge Jiulian Moreno Rubio, Marco Pirola, Roberto Quaglia, Paolo Colantonio, Franco Giannini, Rocco Giofre, Luca Piazzon, Thomas Emanuelsson, and Tobias Wegeland. "High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links." IEEE Transactions on Electron Devices 60, no. 10 (October 2013): 3592–95. http://dx.doi.org/10.1109/ted.2013.2274669.

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29

Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, Virginio Midili, Virginie Nodjiadjim, Muriel Riet, and Agnieszka Konczykowska. "Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers." International Journal of Microwave and Wireless Technologies 10, no. 9 (August 7, 2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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30

Park, Yunsik, Juyeon Lee, Seunghoon Jee, Seokhyeon Kim, Cheol Ho Kim, Bonghyuk Park, and Bumman Kim. "GaN HEMT MMIC Doherty Power Amplifier With High Gain and High PAE." IEEE Microwave and Wireless Components Letters 25, no. 3 (March 2015): 187–89. http://dx.doi.org/10.1109/lmwc.2015.2390536.

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31

Jee, Seunghoon, Juyeon Lee, Seokhyeon Kim, Yunsik Park, and Bumman Kim. "Highly Linear 2-Stage Doherty Power Amplifier Using GaN MMIC." Journal of electromagnetic engineering and science 14, no. 4 (December 30, 2014): 399–404. http://dx.doi.org/10.5515/jkiees.2014.14.4.399.

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32

Quaglia, Roberto, Vittorio Camarchia, and Marco Pirola. "Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications." IEEE Microwave and Wireless Components Letters 24, no. 6 (June 2014): 409–11. http://dx.doi.org/10.1109/lmwc.2014.2313587.

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33

Tao, Hong-Qi, Wei Hong, Bin Zhang, and Xu-Ming Yu. "A Compact 60W X-Band GaN HEMT Power Amplifier MMIC." IEEE Microwave and Wireless Components Letters 27, no. 1 (January 2017): 73–75. http://dx.doi.org/10.1109/lmwc.2016.2630926.

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34

Kim, Jihoon, Kwangseok Choi, Sangho Lee, Hongjong Park, and Youngwoo Kwon. "6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching." Journal of electromagnetic engineering and science 16, no. 1 (January 31, 2016): 44–51. http://dx.doi.org/10.5515/jkiees.2016.16.1.44.

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Florian, Corrado, Rafael Cignani, Alberto Santarelli, and Fabio Filicori. "Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for $C$-Band SAR Applications." IEEE Transactions on Microwave Theory and Techniques 61, no. 12 (December 2013): 4492–504. http://dx.doi.org/10.1109/tmtt.2013.2286109.

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Nikandish, Gholamreza, Robert Bogdan Staszewski, and Anding Zhu. "Bandwidth Enhancement of GaN MMIC Doherty Power Amplifiers Using Broadband Transformer-Based Load Modulation Network." IEEE Access 7 (2019): 119844–55. http://dx.doi.org/10.1109/access.2019.2937388.

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Chen, Ruitao, Ruchun Li, Shouli Zhou, Shi Chen, Jianhua Huang, and Zhiyu Wang. "An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model." Electronics 8, no. 1 (January 16, 2019): 99. http://dx.doi.org/10.3390/electronics8010099.

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This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.

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Yoon, Hong‐Sun, Jong‐Min Yook, Jun C. Kim, Youngcheol Park, and Dongsu Kim. "A broadband RLC matched GaN power amplifier using interposer‐MMIC technology." Microwave and Optical Technology Letters 62, no. 5 (May 2020): 1976–80. http://dx.doi.org/10.1002/mop.32283.

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Campbell, Charles, Cathy Lee, Victoria Williams, Ming-Yih Kao, Hua-Quen Tserng, Paul Saunier, and Tony Balisteri. "A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology." IEEE Journal of Solid-State Circuits 44, no. 10 (October 2009): 2640–47. http://dx.doi.org/10.1109/jssc.2009.2026824.

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Behtash, R., H. Tobler, F. J. Berlec, V. Ziegler, H. Leier, R. S. Balmer, T. Martin, M. Neuburger, and H. Schumacher. "MMIC power amplifier based on AlGaN∕GaN HEMTs at 10 GHz." Electronics Letters 40, no. 9 (2004): 564. http://dx.doi.org/10.1049/el:20040378.

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XIE, SHOUXUAN, VAMSI PAIDI, STEN HEIKMAN, LIKUN SHEN, ALESSANDRO CHINI, UMESH K. MISHRA, MARK J. W. RODWELL, and STEPHEN I. LONG. "HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 847–52. http://dx.doi.org/10.1142/s0129156404002934.

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A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD3) performance over the one without the diode over the useful power range in two-tone measurement.

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Serebryakova, Elena, Kurt Blau, and Matthias Hein. "Influence of the reconstruction filter on the performance of a switched-mode power amplifier." Facta universitatis - series: Electronics and Energetics 26, no. 1 (2013): 1–10. http://dx.doi.org/10.2298/fuee1301001s.

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This paper presents an analysis of a reconstruction filter in a switched mode power amplifier system. Doubly and singly terminated filters for current-mode class-S power amplifiers were analyzed previously through analytical, numerical, and experimental approaches, and it was shown that only singly terminated filters can fulfill the requirements of current-mode switching amplifiers, owing to their constant input resistance over the pass-band. In this paper potential effects of the parasitic components in the actual filters and the filter termination are evaluated. The simulation and measurement results of current mode class-S power amplifier systems employing GaN HEMT MMICs are presented and critically analyzed.

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Crispoldi, Flavia, Alessio Pantellini, Simone Lavanga, Antonio Nanni, Paolo Romanini, Leonardo Rizzi, Paola Farinelli, and Claudio Lanzieri. "Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate." International Journal of Microwave and Wireless Technologies 2, no. 3-4 (July 7, 2010): 333–39. http://dx.doi.org/10.1017/s1759078710000474.

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Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

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Park, Hongjong, Wonho Lee, Joonho Jung, Kwangseok Choi, Jaeduk Kim, Wangyong Lee, Changhoon Lee, and Youngwoo Kwon. "A 6-16 GHz GaN Distributed Power Amplifier MMIC Using Self-bias." Journal of electromagnetic engineering and science 17, no. 2 (April 30, 2017): 105–7. http://dx.doi.org/10.5515/jkiees.2017.17.2.105.

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Lim, Wonseob, Hwiseob Lee, Hyunuk Kang, Wooseok Lee, Kang-Yoon Lee, Keum Cheol Hwang, Youngoo Yang, and Cheon-Seok Park. "2.6 GHz GaN-HEMT Power Amplifier MMIC for LTE Small-Cell Applications." JSTS:Journal of Semiconductor Technology and Science 16, no. 3 (June 30, 2016): 339–45. http://dx.doi.org/10.5573/jsts.2016.16.3.339.

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Bae, Kyung-Tae, Ik-Joon Lee, Byungjoo Kang, Sanghoon Sim, Laurence Jeon, and Dong-Wook Kim. "X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit." Electronics 6, no. 4 (November 28, 2017): 103. http://dx.doi.org/10.3390/electronics6040103.

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Lee, Jaehun, Dong-Ho Lee, and Songcheol Hong. "A Doherty Power Amplifier With a GaN MMIC for Femtocell Base Stations." IEEE Microwave and Wireless Components Letters 24, no. 3 (March 2014): 194–96. http://dx.doi.org/10.1109/lmwc.2013.2292926.

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Noh, Youn Sub, and In Bok Yom. "A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications." IEEE Microwave and Wireless Components Letters 26, no. 8 (August 2016): 619–21. http://dx.doi.org/10.1109/lmwc.2016.2585553.

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Tao, Hong-Qi, Wei Hong, Bin Zhang, and Xu-Ming Yu. "High efficiency 33-37 GHz 20 W GaN HEMT power amplifier MMIC." Microwave and Optical Technology Letters 59, no. 10 (July 27, 2017): 2441–44. http://dx.doi.org/10.1002/mop.30759.

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50

Oppermann, Martin, Joerg Schroth, and Felix Thurow. "Transmit/Receive (T/R) Modules – Key Elements for Phased Array Antennas." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, CICMT (September 1, 2013): 000054–58. http://dx.doi.org/10.4071/cicmt-2013-tp24.

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Modern Active Electronically Steered Antennas (AESA) are operating in different platforms and systems. Inside EADS/CASSIDIAN the focus on X-Band antennas today is in airborne and fighter nose radars, in satellite based SAR antennas (Synthetic Aperture Radar) for earth observation and ground surveillance and security radars. Active antennas are assembled with hundreds or even thousands of T/R modules. This paper will describe an example of a so called standardized module solution based on LTCC package technology. State-of-the-art modules are assembled with active components like MMICs realized in GaAs technology, e.g. Low Noise Amplifier (LNA) and High Power Amplifier (HPA), Silicon based devices and passives. Assembly technologies are optimized for high yield series production inside CASSIDIAN MicroWave Factory. New semiconductor technologies, like GaN (Gallium Nitride) are enablers for a new T/R module generation. GaN/SiC based MMICs with higher power density compared with GaAs based devices are technological challenges for innovative thermal management solutions and assembly alternatives. GaN power devices are soldered on modern heatsink materials with high thermal conductivity and matched CTE (between MMIC and heatsink). Results of thermal simulations comparing different heatsink materials in combination with soldering techniques will be discussed and an optimized solution will be shown. Another type of T/R Module technology based on RF-PCB and packaged MMICs will be discussed. Future applications of ground-based security radars, active antenna products with a one-dimensional array and needs for cost-effective solutions seem to be SMD-based products. Different packages, e.g. QFN (Quad Flat Pack no Lead) and ceramic based (HTCC), mainly for power devices will be shown and compared.

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