Relevant bibliographies by topics / GaN Power Devices

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'GaN Power Devices'

Author: Grafiati
Published: 11 January 2025
Last updated: 19 July 2025

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Journal articles on the topic "GaN Power Devices"

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Langpoklakpam, Catherine, An-Chen Liu, Yi-Kai Hsiao, Chun-Hsiung Lin, and Hao-Chung Kuo. "Vertical GaN MOSFET Power Devices." Micromachines 14, no. 10 (2023): 1937. http://dx.doi.org/10.3390/mi14101937.

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Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Addi
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CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.

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High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,
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Nela, Luca, Ming Xiao, Yuhao Zhang, and Elison Matioli. "A perspective on multi-channel technology for the next-generation of GaN power devices." Applied Physics Letters 120, no. 19 (2022): 190501. http://dx.doi.org/10.1063/5.0086978.

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The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology has rapidly developed and is expected to gain a significant market share in an increasing number of applications in the coming years. However, despite the great progress, the performance of current GaN devices is still far from what the GaN material could potentially offer, and a significant reduction of the device on-resistance for a certai
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Zhang, A. P., F. Ren, T. J. Anderson, et al. "High-Power GaN Electronic Devices." Critical Reviews in Solid State and Materials Sciences 27, no. 1 (2002): 1–71. http://dx.doi.org/10.1080/20014091104206.

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Otsuka, Nobuyuki, Shuichi Nagai, Hidetoshi Ishida, et al. "(Invited) GaN Power Electron Devices." ECS Transactions 41, no. 8 (2019): 51–70. http://dx.doi.org/10.1149/1.3631486.

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Di, Kuo, and Bingcheng Lu. "Gallium Nitride Power Devices in Magnetically Coupled Resonant Wireless Power Transfer Systems." Journal of Physics: Conference Series 2463, no. 1 (2023): 012007. http://dx.doi.org/10.1088/1742-6596/2463/1/012007.

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Abstract The main function of power devices is to convert electrical energy through high-speed switching, such as AC/DC, high and low voltage conversion, etc. Therefore, the performance of the device directly affects the performance of the power electronic device, thereby further affecting the conversion efficiency of electrical energy. The arrival of the 5G era has greatly increased the demand for gallium nitride (GaN). The development of the wireless communication market has made GaN play a key role in many aspects of human activities. The main aim of this article is to research the applicat
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Martín-Guerrero, Teresa M., Damien Ducatteau, Carlos Camacho-Peñalosa, and Christophe Gaquière. "GaN devices for power amplifier design." International Journal of Microwave and Wireless Technologies 1, no. 2 (2009): 137–43. http://dx.doi.org/10.1017/s1759078709000178.

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This paper describes some aspects of the fabrication and modeling of a GaN device to be employed in a power amplifier covering one WiMAX frequency band. The work has been carried out in the frame of the TARGET's NoE work package WiSELPAS. Details concerning the AlGaN/GaN device technology and the performed linear and nonlinear measurements are provided. Since these new devices require specific nonlinear models, a procedure for selecting an appropriate simplified nonlinear model and for extracting its parameters is discussed and evaluated. The developed nonlinear model has been experimentally t
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Roberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.

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GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die stru
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Zhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Meeting Abstracts MA2022-01, no. 31 (2022): 1307. http://dx.doi.org/10.1149/ma2022-01311307mtgabs.

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After decades of relentless efforts, GaN power devices, specifically, the lateral GaN high-electron mobility transistor (HEMT), have been commercialized in the 15-650 V classes. Owing to GaN’s competitive physical properties over Si and SiC for power electronics, GaN HEMTs allow for higher switching frequency and therefore, have already seen wide adoptions in fast chargers, wireless charging, data centers, and electrified transportation. Despite the success of lateral GaN HEMTs, a vertical device structure is usually believed to be more favorable for high-voltage, high-power devices. In the la
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Su, Shuo, Yanrong Cao, Weiwei Zhang, et al. "Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices." Micromachines 16, no. 7 (2025): 729. https://doi.org/10.3390/mi16070729.

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A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state. The reliability of GaN HEMT power devices affects the safe operation of the entire power electronic system and seriously threatens the stability of the equipment. Therefore, it is particularly important to study the damage mechanism of GaN HEMT power devices under high field conditions. This work studies the degradation of Cascode GaN HEMT power devices under off-state high-field stress and analyzes the related damage mechanism. It is fou
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Dissertations / Theses on the topic "GaN Power Devices"

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Zhang, Yuhao Ph D. Massachusetts Institute of Technology. "GaN-based vertical power devices." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/112002.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 163-170).<br>Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for nex
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Unni, Vineet. "Next-generation GaN power semiconductor devices." Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/11984/.

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Nakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices." Kyoto University, 2019. http://hdl.handle.net/2433/244553.

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Lui, Dawei. "Active gate driver design for GaN FET power devices." Thesis, University of Bristol, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730883.

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Hamdaoui, Youssef. "Development of novel GaN-on-Silicon Vertical power devices." Electronic Thesis or Diss., Université de Lille (2022-....), 2024. https://pepite-depot.univ-lille.fr/ToutIDP/EDENGSYS/2024/2024ULILN034.pdf.

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Cette thèse explore le développement de nouveaux dispositifs de puissance verticaux GaN sur silicium, visant à atteindre de hautes performances dans la gamme de 600 à 1200 V avec une fiabilité opérationnelle, incluant la capacité de claquage avalanche. Avecl'augmentation de la demande en énergie de la société moderne, il devient impératif dedévelopper des composants électroniques de puissance plus efficaces. Les dispositifs àbase de silicium traditionnels ont atteint leurs limites physiques, ce qui incite à rechercherdes matériaux alternatifs. Le nitrure de gallium (GaN) s'avère être une solut
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Kumar, Ashwani. "Novel approaches to power efficient GaN and negative capacitance devices." Thesis, University of Sheffield, 2018. http://etheses.whiterose.ac.uk/22492/.

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Recent emergence of data-driven and computation hungry algorithms has fuelled the demand for energy and processing power at an unprecedented rate. Semiconductor industry is, therefore, under constant pressure towards developing energy efficient devices. A Shift towards materials with higher figure-of-merit compared to Si, such as GaN for power conversion is one of the options currently being pursued. A minimisation in parasitic and static power losses in GaN can be brought about by realising on-chip CMOS based gate drivers for GaN power devices. At present, p-channel MOSHFETs in GaN show poor
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Li, Ke. "Wide bandgap (SiC/GaN) power devices characterization and modeling : application to HF power converters." Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10080/document.

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Les matériaux semi-conducteurs à grand gap tels que le carbure de silicium (SiC) et le nitrure de gallium (GaN) sont utilisés pour fabriquer des composants semi-conducteurs de puissance, qui vont jouer un rôle très important dans le développement des futurs systèmes de conversion d'énergie. L'objectif est de réaliser des convertisseurs avec de meilleurs rendements énergétiques et fonctionnant à haute température. Pour atteindre cet objectif, il est donc nécessaire de bien connaître les caractéristiques de ces nouveaux composants afin de développer des modèles qui seront utilisés lors de la con
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Brooks, Clive Raymond. "GaN microwave power FET nonlinear modelling techniques." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4306.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.<br>ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN semiconductor technology is fast emerging and it is expected that these devices will play an important role in RF and microwave power amplifier applications. One of the main advantages of the new GaN semicon
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Borga, Matteo. "Characterization and modeling of GaN-based transistors for power applications." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422355.

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GaN-based devices have emerged as a promising solution for power management applications. The intrinsic physical properties of the Gallium Nitride are exploited in order to considerably improve the efficiency and to reduce the volume of the next generation power switching converters. The wide energy gap allows to fabricate high voltage-rate devices with a reduced area consumption, whereas the high mobility guarantees a considerably low on-Resistance of the transistor. Moreover, thanks to the reduced parasitic capacitances, the operating frequency of the devices can be higher than conventional
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Murillo, Carrasco Luis. "Modelling, characterisation and application of GaN switching devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/modelling-characterisation-and-application-of-gan-switching-devices(a227368d-1029-4005-950c-2a098a5c5633).html.

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The recent application of semiconductor materials, such as GaN, to power electronics has led to the development of a new generation of devices, which promise lower losses, higher operating frequencies and reductions in equipment size. The aim of this research is to study the capabilities of emerging GaN power devices, to understand their advantages, drawbacks, the challenges of their implementation and their potential impact on the performance of power converters. The thesis starts by presenting the development of a simple model for the switching transients of a GaN cascode device under induct
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Books on the topic "GaN Power Devices"

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Meneghini, Matteo, Gaudenzio Meneghesso, and Enrico Zanoni, eds. Power GaN Devices. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-43199-4.

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Di Paolo Emilio, Maurizio. GaN and SiC Power Devices. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-50654-3.

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Fan, Ren, and Zolper J. C, eds. Wide energy bandgap electronic devices. World Scientific Pub., 2003.

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I︠A︡ntovskiĭ, E. I. Zero emissions power cycles. CRC Press, 2009.

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I︠A︡ntovskiĭ, E. I. Zero emissions power cycles. CRC Press, 2009.

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J, Górski, and Shokotov M, eds. Zero emissions power cycles. Taylor & Francis, 2009.

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1937-, Johnson J. H., Baines Thomas M, and Clerc James C, eds. Diesel particulate emissions: Measurement techniques, fuel effects and control technology. Society of Automotive Engineers, 1992.

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1932-, Van Basshuysen Richard, ed. Reduced emissions and fuel consumption in automobile engines. Springer-Verlag, 1995.

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Committee, New Jersey Legislature General Assembly Environment and Solid Waste. Committee meeting of Assembly Environment and Solid Waste Committee: Assembly bill nos. 409 and 2439 : discussion on the implementation of the phase II California Low Emission Vehicle program beginning in calendar year 2006. Office of Legislative Services, Public Information Office, Hearing Unit, 2002.

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Committee, New Jersey Legislature General Assembly Environment and Solid Waste. Committee meeting of Assembly Environment and Solid Waste Committee: Assembly bill no. 3301: the Global Warming Response Act : Committee Room 9, State House Annex, Trenton, New Jersey, February 26, 2007, 2:00 p.m. New Jersey State Legislature, Assembly Environment and Solid Waste Committee, 2007.

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Book chapters on the topic "GaN Power Devices"

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Di Paolo Emilio, Maurizio. "GaN Applications." In GaN and SiC Power Devices. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-50654-3_6.

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Di Paolo Emilio, Maurizio. "Silicon Power Devices." In GaN and SiC Power Devices. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-50654-3_2.

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Di Paolo Emilio, Maurizio. "Gallium Nitride Power Devices." In GaN and SiC Power Devices. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-50654-3_5.

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Zekentes, Konstantinos, Victor Veliadis, Sei-Hyung Ryu, et al. "SiC and GaN Power Devices." In More-than-Moore Devices and Integration for Semiconductors. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21610-7_2.

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Di Paolo Emilio, Maurizio. "Silicon Carbide Devices." In GaN and SiC Power Devices. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-50654-3_8.

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Di Paolo Emilio, Maurizio. "Power Electronics Processing." In GaN and SiC Power Devices. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-50654-3_1.

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Deboy, Gerald, and Matthias Kasper. "Positioning and Perspectives of GaN-Based Power Devices." In GaN Technology. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-63238-9_8.

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Bin, Dong. "9 The Packaging Technologies for GaN HEMTs." In Gallium Nitride Power Devices. CRC Press, 2017. http://dx.doi.org/10.1201/9781315196626-10.

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Meneghesso, Gaudenzio, Enrico Zanoni, Matteo Meneghini, Maria Ruzzarin, and Isabella Rossetto. "Reliability of GaN-Based Power Devices." In Integrated Circuits and Systems. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2_4.

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Ahirwar, Archana, Poonam Singh, S. K. Tomar, Meena Mishra, Ashok Kumar, and B. K. Sehgal. "GaN HEMT Based S-Band Power Amplifier." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_17.

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Conference papers on the topic "GaN Power Devices"

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Fischer, Sandra, Florian Mayer, Verena Leitgeb, Lisa Mitterhuber, and Elke Kraker. "Thermal characterization of vertical GaN based power devices." In 2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE, 2024. http://dx.doi.org/10.1109/therminic62015.2024.10732258.

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Konishi, Ryotaro, Yoji Nagao, Tsuyoshi Hirao, et al. "High-power GaN-based edge-emitting laser diodes." In Gallium Nitride Materials and Devices XX, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2025. https://doi.org/10.1117/12.3039090.

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Ishida, Masahiro, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, and Daisuke Ueda. "GaN power switching devices." In 2010 International Power Electronics Conference (IPEC - Sapporo). IEEE, 2010. http://dx.doi.org/10.1109/ipec.2010.5542030.

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Li, Wenwen, and Dong Ji. "Vertical GaN Power Devices." In 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10103087.

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Chen, Kevin J., and Chunhua Zhou. "GaN Smart Discrete power devices." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667646.

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Zhang, Y., M. Sun, A. Munoz, et al. "Novel Vertical GaN Power Devices." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.d-1-01.

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CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." In High Performance Devices - 2004 IEEE Lester Eastman Conference. World Scientific Publishing Co. Pte. Ltd., 2005. http://dx.doi.org/10.1142/9789812702036_0019.

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Christensen, Adam, and Samuel Graham. "Heat Dissipation in GaN Power Semiconductor Devices." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61525.

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In this work, a numerical study is presented of the impact of growth substrates on thermal dissipation in GaN devices. Substrates included in this study are sapphire, SiC, GaN, ZnO, and LiGaO2. Based on a model high power HFET device with the rear side held at a fixed temperature, the maximum junction temperature in the devices were calculated using finite element analysis and compared. Both interface resistance and the effects of dislocations in the GaN layer were accounted for. Results show that state of the art devices dissipating 10 W/mm of power must be fabricated on high thermal conducti
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Kachi, Tetsu, Masakazu Kanechika, and Tsutomu Uesugi. "Automotive Applications of GaN Power Devices." In 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2011. http://dx.doi.org/10.1109/csics.2011.6062459.

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Kachi, Tetsu. "GaN Power Devices for Automotive Applications." In 2007 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2007. http://dx.doi.org/10.1109/csics07.2007.6.

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Reports on the topic "GaN Power Devices"

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Zhao, Hongping. GaN MOCVD Growth on Native substrates for High Voltage (15-20 KV) Vertical Power Devices. Office of Scientific and Technical Information (OSTI), 2023. https://doi.org/10.2172/2531095.

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Baker, Bryant. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.1780.

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Mazumder, Sudip K. Optically-gated Non-latched High Gain Power Device. Defense Technical Information Center, 2008. http://dx.doi.org/10.21236/ada493165.

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Kurtz, Steven Ross, David Martin Follstaedt, Alan Francis Wright, et al. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/883465.

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Bajwa, Abdullah, and Timothy Jacobs. PR-457-17201-R02 Residual Gas Fraction Estimation Based on Measured Engine Parameters. Pipeline Research Council International, Inc. (PRCI), 2019. http://dx.doi.org/10.55274/r0011558.

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Gas exchange processes in two-stroke internal combustion engines, commonly referred to as scavenging, are responsible for removing the exhaust gases in the combustion chamber and preparing the combustible fuel-oxidizer mixture that undergoes combustion and converts the chemical energy of the fuel into mechanical work. Scavenging is a complicated phenomenon because of the simultaneous introduction of fresh gases into the engine cylinder through the intake ports, and the expulsion of combustion products from the previous cycles through the exhaust ports. A non-negligible fraction of the gaseous
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Hopper. L30500 Analysis of the Effects of High-Voltage Direct-Current Transmission Systems on Buried Pipelines. Pipeline Research Council International, Inc. (PRCI), 2008. http://dx.doi.org/10.55274/r0010196.

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The economics of high voltage direct current for long-distance transmission of electrical energy have been reported as very attractive, to the extent that several projects are in the making. Several reasons other than the savings in transmission costs, for example the exchange of peak power between time zones and seasonal zones, would permit utilities to save on plant investment for generating capacity while maintaining a high level of service. This report summarizes work on the initial phase of a study to determine the effects of high-voltage direct-current (H.V.D.C.) electric transmission li
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Soramäki, Kimmo. Financial Cartography. FNA, 2019. http://dx.doi.org/10.69701/ertx8007.

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Geographic maps have been of military and economic importance throughout the ages. Rulers have commissioned maps to control the financial, economic, political, and military aspects of their sovereign entities. Large scale projects like the Ordnance Survey in the UK in the late 18th century, and the Lewis and Clark Expedition a few decades later to map the American West, are early examples of trailblazing efforts to create accurate modern maps of high strategic importance. Digitalization, globalization, and a larger urban and educated workforce necessitate a new understanding of the world, beyo
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