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Dissertations / Theses on the topic 'GaN Power Devices'

Author: Grafiati
Published: 11 January 2025
Last updated: 31 July 2025

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1

Zhang, Yuhao Ph D. Massachusetts Institute of Technology. "GaN-based vertical power devices." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/112002.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 163-170).<br>Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for nex
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2

Unni, Vineet. "Next-generation GaN power semiconductor devices." Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/11984/.

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3

Nakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices." Kyoto University, 2019. http://hdl.handle.net/2433/244553.

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4

Lui, Dawei. "Active gate driver design for GaN FET power devices." Thesis, University of Bristol, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730883.

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5

Hamdaoui, Youssef. "Development of novel GaN-on-Silicon Vertical power devices." Electronic Thesis or Diss., Université de Lille (2022-....), 2024. https://pepite-depot.univ-lille.fr/ToutIDP/EDENGSYS/2024/2024ULILN034.pdf.

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Cette thèse explore le développement de nouveaux dispositifs de puissance verticaux GaN sur silicium, visant à atteindre de hautes performances dans la gamme de 600 à 1200 V avec une fiabilité opérationnelle, incluant la capacité de claquage avalanche. Avecl'augmentation de la demande en énergie de la société moderne, il devient impératif dedévelopper des composants électroniques de puissance plus efficaces. Les dispositifs àbase de silicium traditionnels ont atteint leurs limites physiques, ce qui incite à rechercherdes matériaux alternatifs. Le nitrure de gallium (GaN) s'avère être une solut
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6

Kumar, Ashwani. "Novel approaches to power efficient GaN and negative capacitance devices." Thesis, University of Sheffield, 2018. http://etheses.whiterose.ac.uk/22492/.

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Recent emergence of data-driven and computation hungry algorithms has fuelled the demand for energy and processing power at an unprecedented rate. Semiconductor industry is, therefore, under constant pressure towards developing energy efficient devices. A Shift towards materials with higher figure-of-merit compared to Si, such as GaN for power conversion is one of the options currently being pursued. A minimisation in parasitic and static power losses in GaN can be brought about by realising on-chip CMOS based gate drivers for GaN power devices. At present, p-channel MOSHFETs in GaN show poor
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7

Li, Ke. "Wide bandgap (SiC/GaN) power devices characterization and modeling : application to HF power converters." Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10080/document.

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Les matériaux semi-conducteurs à grand gap tels que le carbure de silicium (SiC) et le nitrure de gallium (GaN) sont utilisés pour fabriquer des composants semi-conducteurs de puissance, qui vont jouer un rôle très important dans le développement des futurs systèmes de conversion d'énergie. L'objectif est de réaliser des convertisseurs avec de meilleurs rendements énergétiques et fonctionnant à haute température. Pour atteindre cet objectif, il est donc nécessaire de bien connaître les caractéristiques de ces nouveaux composants afin de développer des modèles qui seront utilisés lors de la con
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8

Brooks, Clive Raymond. "GaN microwave power FET nonlinear modelling techniques." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4306.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.<br>ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN semiconductor technology is fast emerging and it is expected that these devices will play an important role in RF and microwave power amplifier applications. One of the main advantages of the new GaN semicon
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9

Borga, Matteo. "Characterization and modeling of GaN-based transistors for power applications." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422355.

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GaN-based devices have emerged as a promising solution for power management applications. The intrinsic physical properties of the Gallium Nitride are exploited in order to considerably improve the efficiency and to reduce the volume of the next generation power switching converters. The wide energy gap allows to fabricate high voltage-rate devices with a reduced area consumption, whereas the high mobility guarantees a considerably low on-Resistance of the transistor. Moreover, thanks to the reduced parasitic capacitances, the operating frequency of the devices can be higher than conventional
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10

Murillo, Carrasco Luis. "Modelling, characterisation and application of GaN switching devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/modelling-characterisation-and-application-of-gan-switching-devices(a227368d-1029-4005-950c-2a098a5c5633).html.

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The recent application of semiconductor materials, such as GaN, to power electronics has led to the development of a new generation of devices, which promise lower losses, higher operating frequencies and reductions in equipment size. The aim of this research is to study the capabilities of emerging GaN power devices, to understand their advantages, drawbacks, the challenges of their implementation and their potential impact on the performance of power converters. The thesis starts by presenting the development of a simple model for the switching transients of a GaN cascode device under induct
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11

Waller, William Michael. "Optimisation of AlGaN/GaN power devices : interface analysis, fieldplate control and current collapse." Thesis, University of Bristol, 2018. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.743050.

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12

Baker, Bryant. "A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices." PDXScholar, 2014. https://pdxscholar.library.pdx.edu/open_access_etds/1781.

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This manuscript describes the design, development, and implementation of a linear high efficiency power amplifier. The symmetrical Doherty power amplifier utilizes TriQuint's 2nd Generation Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT) devices (T1G6001032-SM) for a specified design frequency of 3.6 GHz and saturated output power of 40 dBm. Advanced Design Systems (ADS) simulation software, in conjunction with Modelithic's active and passive device models, were used during the design process and will be evaluated against the final measured results. The
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13

Power, Máire. "Characterisation of temperature and mechanical stress in AlGaN/GaN devices designed for power electronic applications." Thesis, University of Bristol, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.715812.

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14

Bajwa, Adeel Ahmad [Verfasser], and Jürgen [Akademischer Betreuer] Wilde. "New assembly and packaging technologies for high-power and high-temperature GaN and SiC devices." Freiburg : Universität, 2015. http://d-nb.info/1119327814/34.

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15

Tsai, Kaichien. "EMI Modeling and Characterization for Ultra-Fast Switching Power Circuit Based on SiC and GaN Devices." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1385983252.

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16

Stocco, Antonio. "Reliability and failure mechanisms of GaN HEMT devices suitable for high-frequency and high-power applications." Doctoral thesis, Università degli studi di Padova, 2012. http://hdl.handle.net/11577/3422493.

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This thesis reports the main reliability results and failure mechanisms analysis on Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) obtained during the three years of PhD activity. The activity has been focused (i) on the main reliability issues of GaN HEMTs for both high frequency applications, like telecommunication or satellite applications, and high power applications, like high-power switching, (ii) on the failure analysis study of the critical device degradation under high electric-field bias conditions, (iii) and on the deep analysis of few parasitic effects that influenc
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17

Perrin, Rémi. "Characterization and design of high-switching speed capability of GaN power devices in a 3-phase inverter." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI001/document.

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Le projet industriel français MEGaN vise le développement de module de puissance à base de compostant HEMT en GaN. Une des application industrielle concerne l’aéronautique avec une forte contrainte en isolation galvanique (&gt;100 kV/s) et en température ambiante (200°C). Le travail de thèse a été concentré sur une brique module de puissance (bras d’onduleur 650 V 30 A). L’objectif est d’atteindre un prototype de facteur de forme peu épais, 30 cm2 et embarquant l’ensemble des fonctions driver, alimentation de driver, la capacité de bus et capteur de courant phase. Cet objectif implique un fort
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18

Derkacz, Pawel. "Convertisseur GaN optimisé vis-à-vis de la CEM." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT067.

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Cette thèse étudie les possibilités de réduction des interférences électromagnétiques pour les convertisseurs d'électroniques de puissance utilisant des transistors GaN dans trois domaines principaux: la stratégie de contrôle, la conception des circuits imprimés ainsi que l'agencement des composants de puissance et les éléments magnétiques à haute fréquence. Sur la base d'un convertisseur Buck, l’impact de la contribution de la commutation dure et douce sur le bruit conduit généré (mode commun (CM) et mode différentiel (DM)) a été étudiée. L'effet positif de la commutation douce sur la réducti
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19

Ciarkowski, Timothy A. "Low Impurity Content GaN Prepared via OMVPE for Use in Power Electronic Devices: Connection Between Growth Rate, Ammonia Flow, and Impurity Incorporation." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/94551.

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GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be reduced. This reduction can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as oppos
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20

Badawi, Nasser [Verfasser], Sibylle [Akademischer Betreuer] Dieckerhoff, Sibylle [Gutachter] Dieckerhoff, Andreas [Gutachter] Lindemann, and Nando [Gutachter] Kaminski. "Experimental investigation of GaN power devices : dynamic performance, robustness and degradation / Nasser Badawi ; Gutachter: Sibylle Dieckerhoff, Andreas Lindemann, Nando Kaminski ; Betreuer: Sibylle Dieckerhoff." Berlin : Technische Universität Berlin, 2019. http://d-nb.info/1174990295/34.

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21

Yan, Ning. "High-frequency Current-transformer Based Auxiliary Power Supply for SiC-based Medium Voltage Converter Systems." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/101507.

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Auxiliary power supply (APS) plays a key role in ensuring the safe operation of the main circuit elements including gate drivers, sensors, controllers, etc. in medium voltage (MV) silicon carbide (SiC)-based converter systems. Such a converter requires APS to have high insulation capability, low common-mode coupling capacitance (Ccm ), and high-power density. Furthermore, considering the lifetime and simplicity of the auxiliary power supply system design in the MV converter, partial discharge (PD) free and multi-load driving ability are the additional two factors that need to be addressed in t
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22

Kaltsounis, Thomas. "Épitaxie localisée de GaN sur silicium pour une nouvelle génération de transistors de puissance." Electronic Thesis or Diss., Université Côte d'Azur, 2024. http://www.theses.fr/2024COAZ5072.

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Les composants à haute puissance et en particulier haute tension sont essentiels pour la conversion et le stockage de l'énergie électrique pour des applications comme les systèmes photovoltaïques et les voitures électriques. Actuellement, les composants à base de silicium (Si) dominent le secteur de l'électronique de puissance. Les semiconducteurs à large bande interdite comme le nitrure de gallium (GaN) sont d'excellents candidats pour remplacer le silicium. Les propriétés électriques du GaN permettent d'obtenir des composants plus efficaces que ceux à base de Si et de dissiper moins d'énergi
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23

Souguir-Aouani, Amira. "Conception d’une nouvelle génération de redresseur Schottky de puissance en Nitrure de Gallium (GaN), étude, simulation et réalisation d’un démonstrateur." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI093/document.

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Il y a actuellement un intérêt croissant pour la construction des dispositifs électroniques à semiconducteur pour les applications domotiques. La technologie des semiconducteurs de puissance a été essentiellement limitée au silicium. Récemment, de nouveaux matériaux ayant des propriétés supérieures sont étudiés en tant que remplaçants potentiels, en particulier : le nitrure de gallium et le carbure de silicium. L'état actuel de développement de la technologie 4H-SiC est beaucoup plus mature que pour le GaN. Cependant, l'utilisation de 4H-SiC n’est pas une solution économiquement rentable pour
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24

Jarndal, Anwar Hasan. "Large-signal modeling of GaN device for high power amplifier design." Kassel Kassel Univ. Press, 2006. http://www.upress.uni-kassel.de/publi/abstract.php?978-3-89958-258-1.

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25

Jarndal, Anwar Hasan [Verfasser]. "Large signal modeling of GaN device for high power amplifier design / Anwar Hasan Jarndal." Kassel : Kassel Univ. Press, 2006. http://d-nb.info/986579440/34.

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26

Maeda, Takuya. "Study on Avalanche Breakdown in GaN." Doctoral thesis, Kyoto University, 2020. http://hdl.handle.net/2433/253283.

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京都大学<br>0048<br>新制・課程博士<br>博士(工学)<br>甲第22447号<br>工博第4708号<br>新制||工||1735(附属図書館)<br>京都大学大学院工学研究科電子工学専攻<br>(主査)教授 木本 恒暢, 教授 山田 啓文, 准教授 船戸 充<br>学位規則第4条第1項該当<br>Doctor of Philosophy (Engineering)<br>Kyoto University<br>DFAM
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27

Subramani, Nandha kumar. "Physics-based TCAD device simulations and measurements of GaN HEMT technology for RF power amplifier applications." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0084/document.

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Depuis plusieurs années, la technologie de transistors à effet de champ à haute mobilité (HEMT) sur Nitrure de Gallium (GaN) a démontré un potentiel très important pour la montée en puissance et en fréquence des dispositifs. Malheureusement, la présence des effets parasites dégrade les performances dynamiques des composants ainsi que leur fiabilité à long-terme. En outre, l'origine de ces pièges et leur emplacement physique restent incertains jusqu'à aujourd'hui. Une partie du travail de recherche menée dans cette thèse est axée sur la caractérisation des pièges existant dans les dispositifs H
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Yang, Yuchen. "EMI Noise Reduction Techniques for High Frequency Power Converters." Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/83372.

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Switch mode power supplies are widely used in different applications. High efficiency and high power density are two driving forces for power supply systems. However, high dv/dt and di/dt in switch mode power supplies will cause severe EMI noise issue. In a typical front-end converter, the EMI filter usually occupies 1/3 to 1/4 volume of total converter. Hence, reducing the EMI noise of power converter can help reduce the volume of EMI filter and improving the total power density of the converter. The EMI noise can be separated as differential mode (DM) noise and common mode (CM) noise. For of
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29

Monika, Sadia K. "III- Nitride Enhancement Mode Device." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1483535296785214.

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30

Dalcanale, Stefano. "Reliability analysis of GaN HEMT for space applications and switching converters based on advanced experimental techniques and two dimensional device simulations." Doctoral thesis, Università degli studi di Padova, 2017. http://hdl.handle.net/11577/3425311.

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Gallium Nitride is a promising wide-bandgap material for electronics. With GaN based devices it is possible to achieve higher operative frequencies and power densities in comparison to Silicon. The first GaN-based High Electron Mobility Transistor (HEMT) has been designed in the 1995, and after twenty years this technology start to be ready to compete in the market with Silicon-based devices. There are several reason why it was necessary all this time to obtain a stable technology. Unlike Silicon, it is still not possible to grow a gallium nitride crystal starting from a seed, with reasonable
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31

Lee, Hyung-Seok. "High power bipolar junction transistors in silicon carbide." Licentiate thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3854.

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32

Ni, Ze. "Wide Band-Gap Semiconductor Based Power Converter Reliability and Topology Investigation." Diss., North Dakota State University, 2020. https://hdl.handle.net/10365/31935.

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Wide band-gap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) have been widely investigated these years for their preferred operation at higher switching frequency, higher blocking voltage, higher temperature, with a compacter volume, in comparison with the traditional silicon (Si) devices. SiC MOSFETs have been utilized in photovoltaic systems, wind turbine converters, electric vehicles, solid-state transformers, more electric ships, and airplanes. GaN based transistors have also been adopted in the DC-to-DC converters in data centers, personal computers, AC-to
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33

Rouly, Daniel. "Conception et réalisation d'interrupteurs de puissance avancés HEMTs AlGaN/GaN normally-off." Electronic Thesis or Diss., Université de Toulouse (2023-....), 2024. http://www.theses.fr/2024TLSES065.

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La gestion de l'énergie constitue l'un des plus importants défis que notre société va devoir relever au cours du XXIe siècle. Dans ce contexte, il est indispensable de concevoir de nouveaux interrupteurs de puissance à semi-conducteurs afin d'assurer une meilleure gestion de l'énergie électrique. Les matériaux à large bande interdite tels que le GaN sont les candidats adéquats pour répondre à ce nouveau défi. L'inconvénient actuel et majeur des transistors à haute mobilité (High Electron Mobility Transistor - HEMT -) en Nitrure de Gallium (GaN) conventionnels est que leur blocage se fait à des
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34

Watt, Grace R. "Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/96559.

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This paper describes the design, fabrication, and testing of a 1.2 kV, 6.5 mΩ, half-bridge, SiC MOSFET power module to evaluate the impact of parametric device tolerances on electrical and thermal performance. Paralleling power devices increases current handling capability for the same bus voltage. However, inherent parametric differences among dies leads to unbalanced current sharing causing overstress and overheating. In this design, a symmetrical DBC layout is utilized to balance parasitic inductances in the current pathways of paralleled dies to isolate the impact of parametric tolerances.
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35

Millesimo, Maurizio, and Maurizio Millesimo. "OFF-State Reliability of pGaN Power HEMTs." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020. http://amslaurea.unibo.it/19974/.

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The concern for climate changes and the increase in the electricity demand turned the attention towards the production, sorting and use of electric energy through zero emission (CO2) and highly efficient solutions (e.g. for electric vehicle), respectively. As a consequence, the need for high performance, reliable and low cost power transistors adopted for power applications is increasing as well. Gallium nitride seems to be the most promising candidate for the next generation of devices for power electronics, thanks to its excellent properties and comparable cost with respect to Si counterpa
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36

Buono, Benedetto. "Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320.

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The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. However, in order to compete on the market, it is crucial to a have high current gain and a breakdown voltage close to ideal. Moreover, the absence of conductivity modulation and long-term stability has to be solved. In this thesis, these topics are investig
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37

Allen, Noah Patrick. "Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes." Diss., Virginia Tech, 2004. http://hdl.handle.net/10919/102924.

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Interest in wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these requirements, semiconductor material defects, introduced during growth and fabrication, must be minimized. Otherwise, theoretical limits of operation cannot be achieved. In this dissertation, the non-ideal current- voltage (IV) behavior of GaN-based Schottky diodes is discussed first. Here, a new model
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Allen, Noah P. "Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/102924.

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Interest in wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these requirements, semiconductor material defects, introduced during growth and fabrication, must be minimized. Otherwise, theoretical limits of operation cannot be achieved. In this dissertation, the non-ideal current- voltage (IV) behavior of GaN-based Schottky diodes is discussed first. Here, a new model
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39

Lee, Hyung-Seok. "Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, Stockholm : Kungliga Tekniska högskolan, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4623.

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40

Le, Lesle Johan. "Design modeling and evaluation of a bidirectional highly integrated AC/DC converter." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEC009/document.

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De nos jours, les énergies renouvelables remplacent les énergies fossiles. Pour assurer une l’interconnexion entre toutes ces installations électriques, l’électronique de puissance est nécessaire. Les principales spécifications de la prochaine génération de convertisseur de puissances sont un rendement et une densité de puissance élevés, fiabilité et faibles coûts. L’intégration PCB des composants actifs et/ou passifs est perçue comme une approche prometteuse, peu onéreuse et efficace. Les délais ainsi que les coûts de fabrication des convertisseurs de puissance peuvent considérablement réduit
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41

Hachem, Dany. "Méthodes et analyses physico-expérimentales des mécanismes liés à la résistance dynamique dans les composants HEMT GaN de puissance." Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30035.

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Pour contrôler le flux d'énergie électrique de la source à la charge, l'électronique de puissance constitue un des éléments phares dans l'acheminement de cette énergie. La gestion et la conversion de cette énergie électrique nécessitent des convertisseurs de puissance efficaces, basés sur des interrupteurs présentant des performances élevées en commutation et en conduction, à haute puissance et haute fréquence. Bien que les dispositifs à base de silicium dominent depuis longtemps l'électronique de puissance, les propriétés physiques de ce matériau limitent les performances des dispositifs en t
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42

Grézaud, Romain. "Commande de composants grand gap dans un convertisseur de puisance synchrone sans diodes." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT107/document.

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Les composants de puissance grand gap présentent d'ores et déjà des caractéristiques statiques et dynamiques supérieures à leurs homologues en silicium. Mais ces composants d'un nouvel ordre s'accompagnent de différences susceptibles de modifier le fonctionnement de la cellule de commutation. Les travaux qui furent menés au cours de cette thèse se sont intéressés aux composants grand gap et à leur commande au sein d'un convertisseur de puissance synchrone robuste, haut rendement et haute densité de puissance. En particulier deux points critiques ont été identifiés et étudiés. Le premier est la
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Fiori, Alexandre. "Nouvelles générations de structures en diamant dopé au bore par technique de delta-dopage pour l'électronique de puissance : croissance par CVD et caractérisation." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00967208.

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Dans ce projet de thèse, qui s'appuie sur l'optimisation d'un réacteur de croissance du diamant et la construction d'un prototype, nous avons démontré l'épitaxie par étapes de couches de diamant, orientées (100), lourdement dopées au bore sur des couches de dopage plus faible dans le même processus, sans arrêter le plasma. Plus original, nous avons démontré la situation inverse. Nous présentons aussi des croissances assez lentes pour l'épitaxie de films d'épaisseur nanométriques avec de grands sauts de dopage, appelé delta-dopage. L'accent a été porté sur le gain en raideur des interfaces. Nou
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Wijewardane, M. Anusha. "Exhaust system energy management of internal combustion engines." Thesis, Loughborough University, 2012. https://dspace.lboro.ac.uk/2134/9829.

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Today, the investigation of fuel economy improvements in internal combustion engines (ICEs) has become the most significant research interest among the automobile manufacturers and researchers. The scarcity of natural resources, progressively increasing oil prices, carbon dioxide taxation and stringent emission regulations all make fuel economy research relevant and compelling. The enhancement of engine performance solely using incylinder techniques is proving increasingly difficult and as a consequence the concept of exhaust energy recovery has emerged as an area of considerable interest. Thr
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45

Zhang, Yi. "High performance DSP-based servo drive control for a limited-angle torque motor." Thesis, Loughborough University, 1997. https://dspace.lboro.ac.uk/2134/6768.

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This thesis describes the analysis, design and implementation of a high performance DSP-based servo drive for a limited-angle torque motor used in thermal imaging applications. A limited-angle torque motor is an electromagnetic actuator based on the Laws' relay principle, and in the present application the rotation required was from - 10° to + 10° in 16 ms, with a flyback period of 4 ms. To ensure good quality picture reproduction, an exceptionally high linearity of ±0.02 ° was necessary throughout the forward sweep. In addition, the drive voltage to the exciting winding of the motor should be
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46

Nickerl, Georg, Irena Senkoska, and Stefan Kaskel. "Tetrazine functionalized zirconium MOF as an optical sensor for oxidizing gases." Royal Society of Chemistry, 2015. https://tud.qucosa.de/id/qucosa%3A36053.

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Dihydro-1,2,4,5-tetrazine-3,6-dicarboxylate was introduced into the chemically stable UiO-66 structure by a postsynthetic linker exchange reaction to create an optical sensor material for the detection of oxidative agents such as nitrous gases. The incorporated tetrazine unit can be reversibly oxidized and reduced, which is accompanied by a drastic colour change from yellow to pink and vice versa. The high stability of the framework during redox reaction was proven by powder X-ray diffraction and nitrogen physisorption measurements.
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47

Hamad, Hassan. "Détermination des coefficients d'ionisation de matériaux à grand gap par génération multi-photonique." Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0017/document.

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L’utilisation des semi-conducteurs à large bande interdite (wide bandgap ou WBG) tels que le carbure de silicium SiC, le nitrure de gallium GaN, le diamant, etc… s’est répandue dans le domaine de l’électronique de puissance ces dernières décennies. Leurs caractéristiques électroniques et mécaniques font des WBGs des solutions alternatives pour remplacer le traditionnel silicium. Cependant, des études supplémentaires sont indispensables pour améliorer la tenue en tension, les pertes statiques et dynamiques et les performances en fonctionnement à haute température des composants WBGs. Dans ce ca
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48

Щебетенко, А. І. "Дослідження по запропонованій методиці розрахунку гідроп’яти при врахуванні втрат в обвідній трубі". Master's thesis, Сумський державний університет, 2018. http://essuir.sumdu.edu.ua/handle/123456789/71716.

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Об’єкт дослідження – зрівноважувальний пристрій відцентрового насоса – гідроп’ята. Предмет дослідження – гідроп’ята. Мета дослідження – дослідити вплив опору обвідної труби на величину втрат енергії на гідроп’яті та на жорсткість її статичної характеристики. Методи дослідження – задача розв’язувалась в межах одновимірної моделі течії рідини в рухомій системі відліку; застосовувались елементи гідромеханіки, такі як: відносний спокій рідини, сила тиску на плоску стінку та інші; використовувались отримані залежності для визначення втрат потужності в циліндричному і торцевому дроселях. Розробл
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Liu, Shih-Chien, and 劉世謙. "Performance Enhancement Technologies for GaN Power Devices." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/86079432075505825410.

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Liu, Chung-Hsing, and 劉宗興. "Parameter Verification of High Speed Depletion-Mode GaN Power Devices." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/23960232368822795484.

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碩士<br>國立中央大學<br>電機工程學系<br>105<br>Gallium Nitride (GaN) power transistors exist better material properties than Si-based transistors such as higher electron mobility, higher breakdown voltage, higher current density, lower on-state resistance, lower gate charge and smaller output capacitance. It is particularly suitable to function as high speed switches for power electronic circuit applications. The thesis aims to design a circuit module to measure three electrical parameters of depletion-mode GaN power transistors in order to provide information for power electronic circuit design. Three majo
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