Relevant bibliographies by topics / Gas-source molecular-beam epitaxy

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Academic literature on the topic 'Gas-source molecular-beam epitaxy'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Gas-source molecular-beam epitaxy"

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Panish, M. B., and H. Temkin. "Gas-Source Molecular Beam Epitaxy." Annual Review of Materials Science 19, no. 1 (1989): 209–29. http://dx.doi.org/10.1146/annurev.ms.19.080189.001233.

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Davies, G. J., P. J. Skevington, E. G. Scott, C. L. French, and J. S. Foord. "Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy." Journal of Crystal Growth 107, no. 1-4 (1991): 999–1008. http://dx.doi.org/10.1016/0022-0248(91)90593-t.

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Kondow, M., K. Uomi, A. Niwa, et al. "GaNAs grown by gas source molecular beam epitaxy." Solid-State Electronics 41, no. 2 (1997): 209–12. http://dx.doi.org/10.1016/s0038-1101(96)00168-2.

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Ohbu, Isao, Yuta Tezen, Saburo Ataka, and Teruo Mozume. "AsH3Cracking Characteristics in Gas Source Molecular Beam Epitaxy." Japanese Journal of Applied Physics 29, Part 1, No. 12 (1990): 2768–73. http://dx.doi.org/10.1143/jjap.29.2768.

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Hirayama, Hiroyuki, Toru Tatsumi, Atsushi Ogura, and Naoaki Aizaki. "Gas source silicon molecular beam epitaxy using silane." Applied Physics Letters 51, no. 26 (1987): 2213–15. http://dx.doi.org/10.1063/1.99009.

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Hirayama, Hiroyuki, Toru Tatsumi, and Naoaki Aizaki. "Gas source silicon molecular beam epitaxy using disilane." Applied Physics Letters 52, no. 18 (1988): 1484–86. http://dx.doi.org/10.1063/1.99106.

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Goldstein, L., C. Starck, J. Y. Emery, et al. "Optoelectronic devices by gas source molecular beam epitaxy." Journal of Crystal Growth 120, no. 1-4 (1992): 157–61. http://dx.doi.org/10.1016/0022-0248(92)90382-s.

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Ishikawa, Hideaki, Hideyasu Ando, Kazuhiro Kondo, et al. "Metalorganic gas control system for gas source molecular beam epitaxy." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 2 (1990): 805–10. http://dx.doi.org/10.1116/1.576922.

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Wan, J., Y. H. Luo, J. L. Liu, et al. "Carbon nanotubes grown by gas source molecular beam epitaxy." Journal of Crystal Growth 227-228 (July 2001): 820–24. http://dx.doi.org/10.1016/s0022-0248(01)00892-2.

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Zhao, Y. "Effects of arsenic in gas-source molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 3 (1998): 1297. http://dx.doi.org/10.1116/1.590004.

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Dissertations / Theses on the topic "Gas-source molecular-beam epitaxy"

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Benz, Rudolph G. II. "Surface growth kinetics in molecular beam epitxay and gas source molecular beam epitaxy of CdTe." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/30421.

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Coronado, Christopher Alan. "Growth and characterization of ZnSe by metalorganic and gas source molecular beam epitaxy." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/32137.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1994.<br>Includes bibliographical references (leaves 153-162).<br>by Christopher Alan Coronado.<br>Ph.D.
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Bi, Wengang. "Nitrogen-containing mixed group-V compounds grown by gas-source molecular beam epitaxy using a nitrogen radical beam source /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1997. http://wwwlib.umi.com/cr/ucsd/fullcit?p9726020.

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Xin, Huoping. "Gas-source molecular beam epitaxy of GaInNAs and Ga(In)NP for electronic and optoelectronic device applications /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2000. http://wwwlib.umi.com/cr/ucsd/fullcit?p9970681.

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Hatami, Fariba. "Indium phosphide quantum dots in GaP and in In 0.48 Ga 0.52 P." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2002. http://dx.doi.org/10.18452/14873.

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Im Rahmen dieser Arbeit wurden selbstorganisierte, verspannte InP-Quantenpunkte mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und optische Eigenschaften untersucht. Die Quantenpunkte wurden sowohl in InGaP-Matrix gitterangepasst auf GaAs-Substrat als auch in GaP-Matrix auf GaP-Substrat realisiert. Die starke Gitterfehlanpassung von 3,8% im InP/InGaP- bzw. 7,7% im InP/GaP-Materialsystem ermöglicht Inselbildung mittels des Stranski-Krastanow-Wachstumsmodus: Ab einer kritischen InP-Schichtdicke findet kein zweidimensionales, sondern ein dreidimensionales Wachstum
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Lin, Jian-Ming, and 林健銘. "Growth Model of GaAsSb/GaAs Quantum Well by Using Gas Source Molecular Beam Epitaxy." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/87400636754354241865.

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博士<br>國立臺灣大學<br>電子工程學研究所<br>99<br>In this study, gas source molecular beam Epitaxy（GSMBE）was used to grow GaAsSb/GaAs multiple quantum wells with different compositions at various substrate temperatures. In the X-ray measurements, it was found that the Sb content in quantum well is varied with the As atom and reveals different incorporation behaviors. Strong photoluminescence intensity was observed in the grown quantum wells. The maximum wavelength for the sample is about 1.327μm（0.934eV）, which gives an evidence of application for 1.3μm band range. Moreover, blue shift in the type-II GaAsSb/
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Liu, Jin Shung, and 劉進祥. "The Study on InGaAsP and InTlP Alloys Grown by Gas Source Molecular Beam Epitaxy." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/47881830683713167510.

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博士<br>國立臺灣大學<br>電機工程學系<br>85<br>In this study, the growths of InGaAsP and InTlP semiconductor alloys by gas-source molecular beam epitaxy (GSMBE) were investigated. In the study on InGaAsP alloys, a series of InGaAsP bulk layers were successfully grown on GaAs substrates using the previous puroposed growth model. The InGaAsP strain- compensated multiple quantum wells(SCMQW) were then studied. For the device application, 0.98 um InGaAs/InGaAsP quantum well laser diodes were grown and invest
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Wang, Jyh-Shyang, and 王智祥. "The Study on InAs(N) Alloys and Optoelectronic Devices Grown by Gas Source Molecular Beam Epitaxy." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/92146108197666745306.

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博士<br>國立臺灣大學<br>電機工程學研究所<br>88<br>In this dissertation, we report the growth, characterization and device application of InAs and InAs(N) alloys grown by gas-source molecular beam epitaxy (GSMBE). The effect of strain compensation on the quality of InAs/InxGa1-xAs multiple quantum wells (MQW''s) grown on InP substrates by gas-source molecular beam epitaxy was firstly studied. The growth and performance of a 2.2 mm InAs/InGaAs/InP highly strained multiquantum well laser operated at room temperature were then investigated. For a device with 1-mm-long cavity, the threshold current density is 900
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Lin, You-Ru, and 林佑儒. "Growth of III-V Compound Semiconductor Quantum Structures and Devices by Gas-Source Molecular Beam Epitaxy." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/43070905580220137463.

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博士<br>國立臺灣大學<br>光電工程學研究所<br>97<br>The dissertation contains subjects: namely, GaAsSb/GaAs type-II quantum well (QW) with an adjacent InAs quantum-dot (QD) stressor layer and GaAs grown on Si nano-trench. The growths in both subjects are carried out by gas-source molecular-beam epitaxy (GSMBE). First, we study the structural and optical properties of a composite structure consisting of GaAsSb type-II QW well with an adjacent InAs QD stressor layer. From 19-K photoluminescence (PL) spectra, we observed a 44-meV red-shift in emission energy in the composite structure with 5-nm thick spacer layer
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Shih, Ding-Kang, and 時定康. "InAsN Alloys Grown by Radio-Frequency Plasma Assisted Gas-Source Molecular Beam Epitaxy and Its Application on Middle-Infrared Laser Diodes." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/15627864486597063985.

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博士<br>國立臺灣大學<br>電機工程學研究所<br>91<br>In this dissertation, the growth, characterization and device application of InAsN alloys including relaxed InAsN bulk materials and InAsN/In0.53Ga0.47As strained quantum-well structures are presented. The alloys were grown on (100) InP substrates by gas-source molecular beam epitaxy (GSMBE) equipped with a radio-frequency activated nitrogen plasma source. In the first portion of this study, the structural, electrical and optical properties of relaxed InAsN bulk layers with various nitrogen contents were systematically investigated. Results from double crysta
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Books on the topic "Gas-source molecular-beam epitaxy"

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Panish, Morton B., and Henryk Temkin. Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8.

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Panish, M. B. Gas source molecular beam epitaxy: Growth and properties of phosphorus containing III-V heterostructures. Springer-Verlag, 1993.

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Sidhu, Lakhbeer Singh. Hydrogen incorporation into III-V compounds deposited by gas source molecular beam epitaxy. National Library of Canada, 1993.

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Panish, Morton B. Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures. Springer Berlin Heidelberg, 1993.

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Book chapters on the topic "Gas-source molecular-beam epitaxy"

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Panish, Morton B. "Gas Source Molecular Beam Epitaxy." In Mechanisms of Reactions of Organometallic Compounds with Surfaces. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4899-2522-0_30.

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Panish, Morton B., and Henryk Temkin. "Molecular Beam Epitaxy Systems and Procedures." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_4.

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Panish, Morton B., and Henryk Temkin. "Introduction." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_1.

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Panish, Morton B., and Henryk Temkin. "Optoelectronic Devices." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_10.

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Panish, Morton B., and Henryk Temkin. "In-Situ Processing and Selective Area Epitaxy." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_11.

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Panish, Morton B., and Henryk Temkin. "Chemistry." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_2.

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Panish, Morton B., and Henryk Temkin. "The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_3.

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Panish, Morton B., and Henryk Temkin. "Doping During GSMBE." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_5.

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Panish, Morton B., and Henryk Temkin. "Characterization of Heterostructures by High Resolution X-ray Diffraction." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_6.

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Panish, Morton B., and Henryk Temkin. "Optical Properties of Quantum Wells." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_7.

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Conference papers on the topic "Gas-source molecular-beam epitaxy"

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PANISH, MORTON B., and HENRYK TEMKIN. "Gas source molecular beam epitaxy." In Conference on Lasers and Electro-Optics. OSA, 1985. http://dx.doi.org/10.1364/cleo.1985.tho1.

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McCollum, M. J., M. A. Plano, M. A. Haase, et al. "Pumping Requirements And Options For Molecular Beam Epitaxy And Gas Source Molecular Beam Epitaxy/Chemical Beam Epitaxy." In 1st Intl Conf on Idium Phosphide and Related Materials for Advanced Electronic and Optical Devices, edited by Louis J. Messick and Rajendra Singh. SPIE, 1989. http://dx.doi.org/10.1117/12.961995.

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Panish, M. B. "Recent Developments In Gas Source Molecular Beam Epitaxy." In 1st Intl Conf on Idium Phosphide and Related Materials for Advanced Electronic and Optical Devices, edited by Louis J. Messick and Rajendra Singh. SPIE, 1989. http://dx.doi.org/10.1117/12.961979.

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Fujita, Shizuo, Jun Suda, Yoichi Kawakami, and Shigeo Fujita. "Gas source molecular beam epitaxy (MBE) of ZnMgSSe layers." In Photonics for Industrial Applications, edited by Robert L. Gunshor and Arto V. Nurmikko. SPIE, 1994. http://dx.doi.org/10.1117/12.197261.

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Ho, Easen, P. A. Fisher, J. L. House, Gale S. Petrich, and Leslie A. Kolodziejski. "Doping of ZnSe using gas source molecular beam epitaxy." In Photonics for Industrial Applications, edited by Robert L. Gunshor and Arto V. Nurmikko. SPIE, 1994. http://dx.doi.org/10.1117/12.197266.

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Masselink, W. T., M. P. Semtsiv, Y. V. Flores, et al. "AlAs/InAlAs-InGaAs QCLs grown by gas-source molecular-beam epitaxy." In SPIE OPTO, edited by Alexey A. Belyanin and Peter M. Smowton. SPIE, 2014. http://dx.doi.org/10.1117/12.2036359.

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Taferner, W. T., E. Kim, A. Bensaoula, K. Waters, and A. Schultz. "Group III-Nitride materials growth using gas source molecular beam epitaxy." In AIP Conference Proceedings Volume 387. ASCE, 1997. http://dx.doi.org/10.1063/1.52082.

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Razeghi, Manijeh, Steven Slivken, Abbes Tahraoui, and Anthony W. Matlis. "High-performance quantum cascade lasers grown by gas-source molecular beam epitaxy." In Symposium on Integrated Optics, edited by Luke J. Mawst and Ramon U. Martinelli. SPIE, 2001. http://dx.doi.org/10.1117/12.429791.

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Pessa, Markus, T. Hakkarainen, Jari Keskinen, et al. "Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24378.

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Kawamura, Y., A. Wakatsuki, Y. Noguchi, and H. Iwamura. "Low Threshold Current InGaAs/InGaAlAs MQW Lasers Grown by Gas Source Molecular Beam Epitaxy." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.ld-8-2.

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Reports on the topic "Gas-source molecular-beam epitaxy"

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Robinson, Gary L. Gas Source MBE (Molecular Beam Epitaxy). Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada181214.

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Morkoc, Hadis. Gas Source Molecular Beam Epitaxy Deposition of Device Quality Gallium Nitride. Defense Technical Information Center, 1989. http://dx.doi.org/10.21236/ada204359.

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Forrest, Stephen R. 1.5 Micron Wavelength Optical Devices Grown by Gas Source Molecular Beam Epitaxy. Defense Technical Information Center, 1997. http://dx.doi.org/10.21236/ada328675.

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