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Journal articles on the topic 'Gas-source molecular-beam epitaxy'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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1

Panish, M. B., and H. Temkin. "Gas-Source Molecular Beam Epitaxy." Annual Review of Materials Science 19, no. 1 (1989): 209–29. http://dx.doi.org/10.1146/annurev.ms.19.080189.001233.

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2

Davies, G. J., P. J. Skevington, E. G. Scott, C. L. French, and J. S. Foord. "Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy." Journal of Crystal Growth 107, no. 1-4 (1991): 999–1008. http://dx.doi.org/10.1016/0022-0248(91)90593-t.

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3

Kondow, M., K. Uomi, A. Niwa, et al. "GaNAs grown by gas source molecular beam epitaxy." Solid-State Electronics 41, no. 2 (1997): 209–12. http://dx.doi.org/10.1016/s0038-1101(96)00168-2.

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4

Ohbu, Isao, Yuta Tezen, Saburo Ataka, and Teruo Mozume. "AsH3Cracking Characteristics in Gas Source Molecular Beam Epitaxy." Japanese Journal of Applied Physics 29, Part 1, No. 12 (1990): 2768–73. http://dx.doi.org/10.1143/jjap.29.2768.

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5

Hirayama, Hiroyuki, Toru Tatsumi, Atsushi Ogura, and Naoaki Aizaki. "Gas source silicon molecular beam epitaxy using silane." Applied Physics Letters 51, no. 26 (1987): 2213–15. http://dx.doi.org/10.1063/1.99009.

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6

Hirayama, Hiroyuki, Toru Tatsumi, and Naoaki Aizaki. "Gas source silicon molecular beam epitaxy using disilane." Applied Physics Letters 52, no. 18 (1988): 1484–86. http://dx.doi.org/10.1063/1.99106.

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7

Goldstein, L., C. Starck, J. Y. Emery, et al. "Optoelectronic devices by gas source molecular beam epitaxy." Journal of Crystal Growth 120, no. 1-4 (1992): 157–61. http://dx.doi.org/10.1016/0022-0248(92)90382-s.

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8

Ishikawa, Hideaki, Hideyasu Ando, Kazuhiro Kondo, et al. "Metalorganic gas control system for gas source molecular beam epitaxy." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 2 (1990): 805–10. http://dx.doi.org/10.1116/1.576922.

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9

Wan, J., Y. H. Luo, J. L. Liu, et al. "Carbon nanotubes grown by gas source molecular beam epitaxy." Journal of Crystal Growth 227-228 (July 2001): 820–24. http://dx.doi.org/10.1016/s0022-0248(01)00892-2.

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10

Zhao, Y. "Effects of arsenic in gas-source molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 3 (1998): 1297. http://dx.doi.org/10.1116/1.590004.

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11

Davis, R. F., M. J. Paisley, Z. Sitar, et al. "Gas-source molecular beam epitaxy of III–V nitrides." Journal of Crystal Growth 178, no. 1-2 (1997): 87–101. http://dx.doi.org/10.1016/s0022-0248(97)00077-8.

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12

Coronado, C. A., E. Ho, P. A. Fisher, et al. "Gas source molecular beam epitaxy of ZnSe and ZnSe:N." Journal of Electronic Materials 23, no. 3 (1994): 269–73. http://dx.doi.org/10.1007/bf02670635.

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13

Biswas, Dhrubes, and Hadis Morkoc. "A safety system for gas source molecular beam epitaxy." III-Vs Review 4, no. 6 (1991): 20–24. http://dx.doi.org/10.1016/0961-1290(91)90168-v.

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14

Suemitsu, Maki, Fumihiko Hirose, Yuji Takakuwa, and Nobuo Miyamoto. "Growth kinetics in silane gas-source molecular beam epitaxy." Journal of Crystal Growth 105, no. 1-4 (1990): 203–8. http://dx.doi.org/10.1016/0022-0248(90)90362-o.

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15

Biswas, Dhrubes, and Hadis Morkoç. "A safety system for gas source molecular beam epitaxy." Journal of Crystal Growth 113, no. 1-2 (1991): 209–20. http://dx.doi.org/10.1016/0022-0248(91)90026-2.

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16

Suemitsu, Maki, Fumihiko Hirose, and Nobuo Miyamoto. "Si and Ge gas-source molecular beam epitaxy (GSMBE)." Journal of Crystal Growth 107, no. 1-4 (1991): 1015–20. http://dx.doi.org/10.1016/0022-0248(91)90595-v.

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17

Ai, Likun, Shuxing Zhou, Ming Qi, Anhuai Xu, and Shumin Wang. "InGaAsBi materials grown by gas source molecular beam epitaxy." Journal of Crystal Growth 477 (November 2017): 135–38. http://dx.doi.org/10.1016/j.jcrysgro.2017.03.011.

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18

Scheinowitz, D. A., J. Trommel, K. Werner, S. Radelaar, and P. Balk. "Comparative study of molecular beam injection systems for gas source molecular beam epitaxy." Journal of Crystal Growth 127, no. 1-4 (1993): 986–89. http://dx.doi.org/10.1016/0022-0248(93)90773-p.

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19

McCollum, M. J., S. L. Jackson, I. Szafranek, and G. E. Stillman. "Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy." Journal of Crystal Growth 105, no. 1-4 (1990): 316–25. http://dx.doi.org/10.1016/0022-0248(90)90381-t.

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20

Matsubara, Yuya, Kei S. Takahashi, Yoshinori Tokura, and Masashi Kawasaki. "Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy." Applied Physics Express 7, no. 12 (2014): 125502. http://dx.doi.org/10.7567/apex.7.125502.

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21

Hirayama, Hiroyuki, Masayuki Hiroi, and Kazuhisa Koyama. "B doping using B2H6in gas source Si molecular beam epitaxy." Applied Physics Letters 58, no. 18 (1991): 1991–93. http://dx.doi.org/10.1063/1.105042.

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22

Shiralagi, K. T., K. Y. Choi, R. Droopad, G. N. Maracas, and W. E. Quinn. "Hydride cracker nozzle design for gas source molecular beam epitaxy." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, no. 1 (1992): 46–50. http://dx.doi.org/10.1116/1.578148.

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23

Lee, H. Y., M. D. Crook, M. J. Hafich, et al. "InGaP/GaAs superlattices grown by gas‐source molecular beam epitaxy." Applied Physics Letters 55, no. 22 (1989): 2322–24. http://dx.doi.org/10.1063/1.102050.

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24

Wan, J., Y. H. Luo, Sung D. Choi, et al. "Growth of carbon nanotubes by gas source molecular beam epitaxy." Journal of Applied Physics 89, no. 3 (2001): 1973. http://dx.doi.org/10.1063/1.1337083.

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25

Schäfer, H. Ch, B. Rösen, H. Moritz, et al. "Gas source molecular beam epitaxy of FeSi2/Si(111) heterostructures." Applied Physics Letters 62, no. 18 (1993): 2271–73. http://dx.doi.org/10.1063/1.109411.

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26

Hou, H. Q. "Growth studies of GaAsP in gas-source molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 2 (1992): 953. http://dx.doi.org/10.1116/1.586098.

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27

Kuo, J. M. "High quality In0.48Ga0.52P grown by gas source molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 2 (1992): 959. http://dx.doi.org/10.1116/1.586100.

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28

Hafich, M. J. "Gas-source molecular-beam epitaxy growth of InxGa1−x−yAlyP." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 2 (1992): 969. http://dx.doi.org/10.1116/1.586103.

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29

Sitar, Z., M. J. Paisley, B. Yan, R. F. Davis, J. Ruan, and J. W. Choyke. "AlN/GaN superlattices grown by gas source molecular beam epitaxy." Thin Solid Films 200, no. 2 (1991): 311–20. http://dx.doi.org/10.1016/0040-6090(91)90203-a.

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30

Panish, M. B. "Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP." Progress in Crystal Growth and Characterization 12, no. 1-4 (1986): 1–28. http://dx.doi.org/10.1016/0146-3535(86)90004-3.

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31

Tsai, Gene, De-Lun Wang, Chia-En Wu, Chen-Jun Wu, Yan-Ting Lin, and Hao-Hsiung Lin. "InAsPSb quaternary alloy grown by gas source molecular beam epitaxy." Journal of Crystal Growth 301-302 (April 2007): 134–38. http://dx.doi.org/10.1016/j.jcrysgro.2006.09.010.

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32

Gong, Q., P. Chen, S. G. Li, et al. "Quantum dot lasers grown by gas source molecular-beam epitaxy." Journal of Crystal Growth 323, no. 1 (2011): 450–53. http://dx.doi.org/10.1016/j.jcrysgro.2010.12.014.

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33

Droopad, R., K. T. Shiralagi, R. A. Puechner, K. Y. Choi, and G. N. Maracas. "Low temperature GaAs grown by gas source molecular beam epitaxy." Journal of Crystal Growth 120, no. 1-4 (1992): 200–205. http://dx.doi.org/10.1016/0022-0248(92)90391-u.

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34

Sakata, H., K. Utaka, and Y. Matsushima. "Triangular-barrier optoelectronic switch by gas source molecular beam epitaxy." Journal of Crystal Growth 150 (May 1995): 1384–88. http://dx.doi.org/10.1016/0022-0248(95)80165-9.

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35

Seta, Masumichi, Hajime Asahi, Song Gang Kim, Kumiko Asami, and Shun‐ichi Gonda. "Gas source molecular beam epitaxy/migration enhanced epitaxy growth of InAs/AlSb superlattices." Journal of Applied Physics 74, no. 8 (1993): 5033–37. http://dx.doi.org/10.1063/1.354284.

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36

Xie, M. H., J. Zhang, J. M. Fernandez, A. K. Lees, and B. A. Joyce. "Arsenic doping kinetics in silicon during gas source molecular beam epitaxy." Surface Science 397, no. 1-3 (1998): 164–69. http://dx.doi.org/10.1016/s0039-6028(97)00728-0.

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37

Fehrenbacher, M., H. Rauscher, and R. J. Behm. "Self-limited SiH2Cl2 gas source molecular beam epitaxy on Si(100)." Surface Science 491, no. 1-2 (2001): 275–99. http://dx.doi.org/10.1016/s0039-6028(01)01417-0.

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38

Jenny, J. R., R. Kaspi, and K. R. Evans. "Growth kinetics of GaN grown by gas-source molecular beam epitaxy." Journal of Crystal Growth 175-176 (May 1997): 89–93. http://dx.doi.org/10.1016/s0022-0248(96)01020-2.

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39

Hirose, F. "Modeling growth in Si gas-source molecular beam epitaxy using Si2H6." Journal of Crystal Growth 179, no. 1-2 (1997): 108–14. http://dx.doi.org/10.1016/s0022-0248(97)00092-4.

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40

Masselink, W. Ted, and Martin Zachau. "In0.35Ga0.65P light‐emitting diodes grown by gas‐source molecular beam epitaxy." Applied Physics Letters 61, no. 1 (1992): 58–60. http://dx.doi.org/10.1063/1.107668.

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41

Chou, Li-Chang, Yu-Ru Lin, Cheng-Tien Wan, and Hao-Hsiung Lin. "[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy." Microelectronics Journal 37, no. 12 (2006): 1511–14. http://dx.doi.org/10.1016/j.mejo.2006.05.012.

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42

Paisley, M. J., and R. F. Davis. "Photoassisted growth of gallium nitride by gas source molecular beam epitaxy." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11, no. 1 (1993): 18–24. http://dx.doi.org/10.1116/1.578700.

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43

Karpov, S. Yu, Yu N. Makarov, M. S. Ramm, and R. A. Talalaev. "Analysis of gallium nitride growth by gas-source molecular beam epitaxy." Journal of Crystal Growth 187, no. 3-4 (1998): 397–401. http://dx.doi.org/10.1016/s0022-0248(98)00005-0.

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44

Taylor, N., H. Kim, P. Desjardins, Y. L. Foo, and J. E. Greene. "Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics." Applied Physics Letters 76, no. 20 (2000): 2853–55. http://dx.doi.org/10.1063/1.126495.

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45

Kipshidze, G., V. Kuryatkov, K. Choi, et al. "AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy." physica status solidi (a) 188, no. 2 (2001): 881–84. http://dx.doi.org/10.1002/1521-396x(200112)188:2<881::aid-pssa881>3.0.co;2-#.

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46

Hirayama, Hiroyuki, Masayuki Hiroi, Kazuhisa Koyama, and Toru Tatsumi. "Selective heteroepitaxial growth of Si1−xGexusing gas source molecular beam epitaxy." Applied Physics Letters 56, no. 12 (1990): 1107–9. http://dx.doi.org/10.1063/1.102582.

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47

Hirayama, Hiroyuki, Toru Tatsumi, and Naoaki Aizaki. "Selective growth condition in disilane gas source silicon molecular beam epitaxy." Applied Physics Letters 52, no. 26 (1988): 2242–43. http://dx.doi.org/10.1063/1.99654.

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48

Takanashi, Yoshifumi, and Naoto Kondo. "Deep trap in InGaAs grown by gas source molecular beam epitaxy." Journal of Applied Physics 85, no. 1 (1999): 633–34. http://dx.doi.org/10.1063/1.369420.

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49

Quigley, J. H. "Growth of InGaP on GaAs using gas-source molecular-beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 2 (1989): 358. http://dx.doi.org/10.1116/1.584750.

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50

Kim, H. S., M. J. Hafich, G. A. Patrizi, et al. "Electron traps in InGaP grown by gas source molecular beam epitaxy." Journal of Applied Physics 74, no. 2 (1993): 1431–33. http://dx.doi.org/10.1063/1.355330.

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