Relevant bibliographies by topics / Gate-All-Around (GAA) Transistor

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Gate-All-Around (GAA) Transistor'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Gate-All-Around (GAA) Transistor"

1

Im, Ki-Sik, Mallem Siva Pratap Reddy, Jinseok Choi, et al. "Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors." Journal of Nanoscience and Nanotechnology 20, no. 7 (2020): 4282–86. http://dx.doi.org/10.1166/jnn.2020.17784.

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We investigate the DC, C–V, and pulse performances in GaN-based nanowire gate-all-around (GAA) transistors with two kinds of geometry: one is AlGaN/GaN heterostructure with two dimensional electron gas (2DEG) channel and the other is only GaN layer without 2DEG channel. From I–V and C–V curves, the fabricated GaN nanowire GAA transistor with AlGaN layer clearly exhibits normally-on operation with negative threshold voltage (Vth) due to the existence of 2DEG channel on the trapezoidal shaped GaN nanowire. On the other hand, the GaN nanowire GAA transistor without AlGaN layer presents a positive Vth (normally-off operation) due to the absent of 2DEG channel on the triangle shaped GaN nanowire. However, both devices show the similar temperaturedependent I–V characteristics due to the combination of bulk channel and surface channel in GaN nanowire GAA channel are mostly contributed, rather than the 2DEG channel. GaN-based nanowire GAA transistors demonstrate to almost negligible current collapse phenomenon due to the perfect GAA gate structure in GaN nanowire. The proposed GaN-based nanowire GAA transistors are very promising candidate for both high power device and nano-electronics application.
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HOSSEINI, REZA, MORTEZA FATHIPOUR, and RAHIM FAEZ. "PERFORMANCE EVALUATION OF SOURCE HETEROJUNCTION STRAINED CHANNEL GATE ALL AROUND NANOWIRE TRANSISTOR." Modern Physics Letters B 26, no. 12 (2012): 1250076. http://dx.doi.org/10.1142/s0217984912500765.

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A Gate All Around Nanowire Transistor (GAA NWT) which employs source heterojunction and strained channel is proposed which improves device characteristics. A quantum mechanical transport approach based on nonequilibrium Green's function (NEGF) method in the frame work of effective mass theory is employed in this analysis. We evaluate the variation of the threshold voltage, the subthreshold slope, ON and OFF state currents when channel length decreases. It is shown that the source heterojunction strained channel GAA NWT gives high performance transistors values of the scaled transconductance and ON current that are greater than conventional silicon GAA NWT. Furthermore, comparison of switching delay τd and unity current gain frequency fT of the devices shows that the performance of source heterojunction strained channel GAA NWT is better than the conventional silicon GAA NWT.
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Seon, Kim, Kim, and Jeon. "Analytical Current-Voltage Model for Gate-All-Around Transistor with Poly-Crystalline Silicon Channel." Electronics 8, no. 9 (2019): 988. http://dx.doi.org/10.3390/electronics8090988.

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Poly-crystalline silicon channel transistors have been used as a display TFT for a long time and have recently been used in a 3D vertical NAND Flash which is a transistor with 2D plane NAND upright. In addition, multi-gate transistors such as FinFETs and a gate-all-around (GAA) structure has been used to suppress the short-channel effects for logic/analog and memory applications. Compact models for poly-crystalline silicon (poly-silicon) channel planar TFTs and single crystalline silicon channel GAA MOSFETs have been developed separately, however, there are few models consider these two physics at the same time. In this work, we derived new analytical current-voltage model for GAA transistor with poly-silicon channel by considering the cylindrical coordinates and the grain boundary effect. Based on the derived formula, the compact I-V model for various operating regions and threshold voltage was proposed for the first time. The proposed model was compared with the measured data and good agreements were observed.
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Han, Ke, Shanglin Long, Zhongliang Deng, Yannan Zhang, and Jiawei Li. "A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications." Micromachines 11, no. 2 (2020): 164. http://dx.doi.org/10.3390/mi11020164.

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This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate-all-around tunnel field-effect transistors. Furthermore, the electrical characteristics were optimised using Synopsys Sentaurus technology computer-aided design (TCAD). The GAS GAA TFET contains a combination of around-source germanium and silicon, which have different bandgaps. With an increase in the gate-source voltage, band-to-band tunnelling (BTBT) in silicon rapidly approached saturation since germanium has a higher BTBT probability than silicon. At this moment, germanium could still supply current increment, resulting in a steady and steep average subthreshold swing ( S S AVG ) and a higher ON-state current. The GAS GAA TFET was optimised through work function and drain overlapping engineering. The optimised GAS GAA TFET exhibited a high ON-state current ( I ON ) (11.9 μ A), a low OFF-state current ( I OFF ) ( 2.85 × 10 − 9 μ A), and a low and steady S S AVG (57.29 mV/decade), with the OFF-state current increasing by 10 7 times. The GAS GAA TFET has high potential for use in low-power applications.
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Singh, Sarabdeep, Leo Raj Solay, Sunny Anand, Naveen Kumar, Ravi Ranjan, and Amandeep Singh. "Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier." Micromachines 14, no. 7 (2023): 1357. http://dx.doi.org/10.3390/mi14071357.

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This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorporates dual-material gate (DMG) and gate stack (GS) as gate engineering techniques and its analog/RF performance parameters are compared to those of the Gate-All-Around Single-Material Gate Charge Plasma Nanowire Field Effect Transistor (GAA-SMG-CP NW-FET) device. Both Gate-All-Around (GAA) devices are designed using the Silvaco TCAD tool. GAA structures have demonstrated good gate control because the gate holds the channel, which is an inherent advantage for both devices discussed herein. The charge plasma dopingless technique is used, in which the source and drain regions are formed using metal contacts and necessary work functions rather than doping. This dopingless technique eliminates the need for doping, reducing fluctuations caused by random dopants and lowering the device’s thermal budget. Gate engineering techniques such as DMG and GS significantly improved the current characteristics which played a crucial role in obtaining maximum gain for circuit designs. The lookup table (LUT) approach is used in the implementation of the CS amplifier circuit with the proposed device. The transient response of the circuit is analyzed with both the device structures where the gain achieved for the CS amplifier circuit using the proposed GAA-DMG-GS-CP NW-FET is 15.06 dB. The superior performance showcased by the proposed GAA-DMG-GS-CP NW-FET device with analog, RF and circuit analysis proves its strong candidature for future nanoscale and low-power applications.
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Gu, Jie, Qingzhu Zhang, Zhenhua Wu, et al. "Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs." Nanomaterials 11, no. 2 (2021): 309. http://dx.doi.org/10.3390/nano11020309.

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A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.
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Luo, Wei, Chaofei Zha, Xia Zhang, Xin Yan, and Xiaomin Ren. "Synaptic devices based on gate-all-around InAs nanowire field effect transistor." Journal of Physics: Conference Series 2370, no. 1 (2022): 012015. http://dx.doi.org/10.1088/1742-6596/2370/1/012015.

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In this paper, we proposed a gate-all-around InAs nanowire field effect transistor (GAA InAs NW FET) that can simulate synaptic behaviors such as short-term potentiation (STP) and long-term potentiation (LTP). The native oxide layer (In2O3) on the surface of InAs NW serves as a charge trapping layer for storing information. The transition from short-term potentiation (STP) to long-term potentiation (LTP) can be achieved by properly adjusting the gate voltage. Due to enhanced gate controllability, the GAA InAs NW FETs are expected to be widely used and promising in neuromorphic systems and networks.
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Vimala, Palanichamy, and N. R. Nithin Kumar. "Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET." Journal of Nano Research 59 (August 2019): 137–48. http://dx.doi.org/10.4028/www.scientific.net/jnanor.59.137.

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The paper proposes analytical model for Gate-All-Around Metal Oxide Semiconductor Field Effect Transistor (GAA-MOSFET) for germanium channel including quantum mechanical effects. It is achieved by solving coupled Schrodinger-Poisson’s equation using variational approach. The proposed model takes quantum confinement effects to obtain charge centroid and inversion charge model. By using these models the quantum version of inversion layer capacitance, inversion charge distribution function and Drain current expressions are modelled and the performance evaluation of the developed model is compared with Silicon channel GAA-MOSFET. Analytically modelled expressions are verified by comparing the model with simulation results.
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Zhang, Yannan, Ke Han, and and Jiawei Li. "A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator." Micromachines 11, no. 2 (2020): 223. http://dx.doi.org/10.3390/mi11020223.

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Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core–Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.
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Abdul-Kadir, Firas Natheer, Yasir Hashim, Muhammad Nazmus Shakib, and Faris Hassan Taha. "Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 1 (2021): 780. http://dx.doi.org/10.11591/ijece.v11i1.pp780-787.

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This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.
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Dissertations / Theses on the topic "Gate-All-Around (GAA) Transistor"

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Harrison, Samuel. "Dispositifs GAA [Gate-All-Around] en technologie SON [Silicon-On-Nothing] : conception, caractérisation et modélisation en vue de l'intégration dans les noeuds CMOS avancés." Aix-Marseille 1, 2005. http://www.theses.fr/2005AIX11021.

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Depuis près de quarante ans, la densité d'intégration des transistors est doublée tous les deux ans environ, en suivant un rythme infernal dicté par la fameuse " loi de Moore ". Pourtant, cette dernière est aujourd'hui remise en question. En effet, pour la première fois, le transistor MOS " historique " est sur le point de buter sur des barrières physiques, électriques et technologiques quasi-insurmontables. La réduction des dimensions caractéristiques principales du MOS (mais aussi des tensions d'alimentation) s'accompagne de l'apparition d'un grand nombre d'effets parasites (effets canaux courts, fuites de grilles etc. ). Pour poursuivre efficacement la course à la miniaturisation des transistors, nous constatons ainsi l'émergence de toute une famille de dispositifs à films minces (à simple grille, SOI, SON ou à grilles multiples, Double-Grille, FinFET ou GAA, par exemple. . . ), permettant un meilleur contrôle du potentiel électrostatique, tout en conservant des performances électriques équivalentes, voire supérieures à l'architecture conventionnelle. Dans ce travail de thèse, nous proposons l'étude d'un transistor à grille enrobante (ou GAA), réalisé en technologie SON. Nous décrivons les principales étapes de sa réalisation technologique puis nous démontrons électriquement qu'un tel dispositif satisfait pleinement les exigences des prochains noeuds technologiques. Nous démontrons finalement la maturité et la fiabilité, à la fois du procédé SON, mais aussi du procédé PRETCH, grâce à la réalisation d'inverseurs et de SRAMs GAA (grille TiN) fonctionnels. Toute une plateforme technologique est ainsi proposée se basant sur l'aspect 3D de la conception du circuit.
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Ray, Biswajit. "Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective." Thesis, 2008. https://etd.iisc.ac.in/handle/2005/741.

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Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology nodes. It is therefore extremely necessary to develop compact models for MG transistors in order to use them in nano-scale integrated circuit design and simulation. There is however a sharp distinction between the electrostatics of traditional bulk transistors and undoped body devices. In bulk transistor, where the substrate is sufficiently doped, the inversion charges are located close to the surface and hence the surface potential solely controls the electrostatic integrity of the device. However, in undoped body devices, gate electric field penetrates the body center, and inversion charge exists throughout the body. In contrast to the bulk transistors, depending on device geometry, the potential of the body center of undoped body devices could be higher than the surface in weak inversion regime and the current flows through the center-part of the device instead of surface. Several crucial parameters (e.g. Sub-threshold slope) sometimes become more dependable on the potential of body center rather than the surface. Hence the body-center potential should also be modeled correctly along with the surface-potential for accurate calculation of inversion charge, threshold voltage and other related parameters of undoped body multi-gate transistors. Although several potential models for MG transistors have been proposed to capture the short channel behavior in the subthreshold regime but most of them are based on the crucial approximation of coverting the 2D Poisson’s equation into Laplace equation. This approximation holds good only at surface but breaks down at body center and in the moderate inversion regime. As a result all the previous models fail to capture the potential of body center Correctly and remain valid only in weak-inversion regime. In this work we have developed semiclassical compact models for potential distribution for double gate (DG) and cylindrical Gate-All-Around (GAA) transistors. The models are based on the analytical solution of 2D Poisson’s equation in the channel region and valid for both: a) weak and strong inversion regimes, b) long channel and short channel transistors, and, c) body surface and center. Using the proposed model, for the first time, it is demonstrated that the body potential versus gate voltage characteristics for the devices having equal channel lengths but different body thicknesses pass through a single common point (termed as crossover point). Using the concept of “crossover point” the effect of body thickness on the threshold voltage of undoped body multi-gate transistors is explained. Based on the proposed body potential model, a new compact model for the subthreshold swing is formulated. Some other parameters e.g. inversion charge, threshold voltage roll-off etc are also studied to demonstrate the impact of body center potential on the electrostatics of multi gate transistor. All the models are validated against professional numerical device simulator.
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Ray, Biswajit. "Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective." Thesis, 2008. http://hdl.handle.net/2005/741.

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Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology nodes. It is therefore extremely necessary to develop compact models for MG transistors in order to use them in nano-scale integrated circuit design and simulation. There is however a sharp distinction between the electrostatics of traditional bulk transistors and undoped body devices. In bulk transistor, where the substrate is sufficiently doped, the inversion charges are located close to the surface and hence the surface potential solely controls the electrostatic integrity of the device. However, in undoped body devices, gate electric field penetrates the body center, and inversion charge exists throughout the body. In contrast to the bulk transistors, depending on device geometry, the potential of the body center of undoped body devices could be higher than the surface in weak inversion regime and the current flows through the center-part of the device instead of surface. Several crucial parameters (e.g. Sub-threshold slope) sometimes become more dependable on the potential of body center rather than the surface. Hence the body-center potential should also be modeled correctly along with the surface-potential for accurate calculation of inversion charge, threshold voltage and other related parameters of undoped body multi-gate transistors. Although several potential models for MG transistors have been proposed to capture the short channel behavior in the subthreshold regime but most of them are based on the crucial approximation of coverting the 2D Poisson’s equation into Laplace equation. This approximation holds good only at surface but breaks down at body center and in the moderate inversion regime. As a result all the previous models fail to capture the potential of body center Correctly and remain valid only in weak-inversion regime. In this work we have developed semiclassical compact models for potential distribution for double gate (DG) and cylindrical Gate-All-Around (GAA) transistors. The models are based on the analytical solution of 2D Poisson’s equation in the channel region and valid for both: a) weak and strong inversion regimes, b) long channel and short channel transistors, and, c) body surface and center. Using the proposed model, for the first time, it is demonstrated that the body potential versus gate voltage characteristics for the devices having equal channel lengths but different body thicknesses pass through a single common point (termed as crossover point). Using the concept of “crossover point” the effect of body thickness on the threshold voltage of undoped body multi-gate transistors is explained. Based on the proposed body potential model, a new compact model for the subthreshold swing is formulated. Some other parameters e.g. inversion charge, threshold voltage roll-off etc are also studied to demonstrate the impact of body center potential on the electrostatics of multi gate transistor. All the models are validated against professional numerical device simulator.
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Lin, Chia-Min, and 林家名. "A Study of the Crystallization Methods on Gate-All-Around (GAA) Poly-Si Nanowire Thin-Film-Transistors." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/46138675336333852345.

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碩士<br>逢甲大學<br>產業研發碩士班<br>97<br>Poly-Si thin film transistors (TFTs) have been widely used as switching elements in active-matrix displays. For applications on system-on-panel (SOP) and three-dimension integrated circuits (3-D ICs), further improvement of device performance are required. The mobility is one of the most important electrical characteristic in poly-Si TFTs, which is profoundly dependent on the grain sizes within channel region. The use of excimer laser crystallization is the main approach to enlarge the grain size, but its size of grain growth is still limited. Other than crystallization, channel dimension scaled-down within a grain is another way to improve mobility performance. However, there are some undesired short-channel effects in conventional scaled poly-Si TFTs such as threshold voltage (Vth) roll-off, drain-induced barrier lowering (DIBL), and kink effect which are caused from the grain-boundary defects and the floating body in the channel region. It has been reported that multi-gate and nanowire structures have good gate controllability and thus effectively suppress the short channel effects. In this thesis, we proposed two gate-all-around poly-Si TFTs with multiple nanowire channels (GAA-MNC TFTs) by excimer laser crystallization (ELC) and nano-width patterning techniques to enhance the device performance. In the chapter 2, spacer patterning approaches was utilized to perform the nano-scale nanowires as channels and relatively thick regions at the source and drain islands simultaneously. The grain size in thinner nanowire channel region is around 300 nm. There is only one grain-growing seed can be performed in each end of nanowire connected to the thicker S/D islands. Therefore, high crystalline Si nanowire with only-one grain boundary in the middle of channel can be carried out. In previous works, there is few research on nanowire crystallization with excimer laser. The fabricated GAA-ELC MNC TFTs exhibit excellent electrical performance as compared to the SPC counterparts. Under the on-state operation, the GAA-MNC TFTs demonstrate lower Vth (from 1.65 to -0.94 V), smaller DIBL (from 0.268 to 0.157 V/V), sbrupt subthreshold swing (SS) (from 450 to 142 mV/decade), less kink current, higher on current (from 1.24×106 to 1.37×107 A), and higher mobility (from 30 to 273 cm2/V-s). In the chapter 3, another gate-all-around (GAA) poly-Si TFTs structure with single-crystalline-like nanowires were proposed as well. Unlike previous method, such single-crystalline-like nanowires were directly performed with spacer patterning technique on the large-grain poly-Si which was crystallized by sequential-lateral-solidification (SLS) method. The fabricated GAA-SLS MNC TFTs exhibit excellent electrical performance as compared to CP-SLS MNC TFTs ones. The GAA-SLS MNC TFTs demonstrate lower Vth (from -0.25 to -0.75 V), smaller DIBL (from 0.41 to 0.06 V/V), stepper subthreshold swing (SS) (from 327 to 109 mV/decade), less kink current, higher on current (from 6.43×106 to 8.65×107 A), and higher mobility (from 208 to 679 cm2/V-s). Among those, the GAA-SLS MNC TFTs display the best performance. Moreover, the GAA-SLS MNC and conventional planar (CP-SLS) TFTs with different dimensions were also discussed. The GAA-SLS MNC TFTs demonstrate excellent immunity on the short-channel effect and excellent mobility.
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Book chapters on the topic "Gate-All-Around (GAA) Transistor"

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Julien, Levisse Alexandre Sébastien, Xifan Tang, and Pierre-Emmanuel Gaillardon. "Innovative Memory Architectures Using Functionality Enhanced Devices." In Emerging Computing: From Devices to Systems. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7487-7_3.

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AbstractSince the introduction of the transistor, the semiconductor industry has always been able to propose an increasingly higher level of circuit performance while keeping cost constant by scaling the transistor’s area. This scaling process (named Moore’s law) has been followed since the 80s. However, it has been facing new constraints and challenges since 2012. Standard sub-30nm bulk CMOS technologies cannot provide sufficient performance while remaining industrially profitable. Thereby, various solutions, such as FinFETs (Auth et al. 2012) or Fully Depleted Silicon On Insulator (FDSOI) (Faynot et al. 2010) transistors have therefore been proposed. All these solutions enabled Moore’s law scaling to continue. However, when approaching sub-10nm technology nodes, the story starts again. Again, process costs and electrical issues reduce the profitability of such solutions, and new technologies such as Gate-All-Around (GAA) (Sacchetto et al. 2009) transistors are seen as future FinFET replacement candidates.
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Verma, Yogesh Kumar, Varun Mishra, Rohit Gurjar, Rajeev Kumar Chauhan, and Santosh Kumar Gupta. "Simulation-Based Analysis of AlGaN/GaN Gate All Around Field Effect Transistor (AlGaN/GaN GAA-FET)." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0312-0_21.

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Chatterjee, Neel, and Sujata Pandey. "Multiphysics Analysis of Heat Transfer in Gate All Around (GAA) Silicon Nanowire Transistor: Material Perspective." In Springer Proceedings in Physics. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_6.

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Srivastava, Shobhit, and Abhishek Acharya. "Challenges and future scope of gate-all-around (GAA) transistors." In Device Circuit Co-Design Issues in FETs. CRC Press, 2023. http://dx.doi.org/10.1201/9781003359234-11.

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Kumar, Raj, Shashi Bala, and Arvind Kumar. "Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors." In Advances in Computer and Electrical Engineering. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch003.

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To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.
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Conference papers on the topic "Gate-All-Around (GAA) Transistor"

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Narang, Rakhi, Manoj Saxena, R. S. Gupta, and Mridula Gupta. "An analytical modeling approach for a gate all around (GAA) tunnel field effect transistor (TFET)." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.925534.

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Lee, Ryoongbin, Suhyeon Kim, Sangwan Kim, et al. "Simulation study on influence of interface trap position in Sii-xGex Gate-All-Around (GAA) field-effect transistor." In 2018 International Conference on Electronics, Information, and Communication (ICEIC). IEEE, 2018. http://dx.doi.org/10.23919/elinfocom.2018.8330548.

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Seo, Jae Hwa, Young Jun Yoon, Hwan Gi Lee, and In Man Kang. "Design optimization InGaAs/GaAsSb-based heterojunction Gate-all-around (GAA) arch-shaped tunneling field-effect transistor (A-TFET)." In 2018 International Conference on Electronics, Information, and Communication (ICEIC). IEEE, 2018. http://dx.doi.org/10.23919/elinfocom.2018.8330638.

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Ou, Jiaojiao, Ru Huang, Yuchao Liu, Runsheng Wang, and Yangyuan Wang. "Performance investigation of SRAM cells based on gate-all-around (GAA) Si nanowire transistor for ultra-low voltage applications." In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2012. http://dx.doi.org/10.1109/icsict.2012.6466743.

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Kumar, Parveen, and Balwinder Raj. "Design and Simulation of Silicon Nanowire Tunnel Field Effect Transistor." In International Conference on Women Researchers in Electronics and Computing. AIJR Publisher, 2021. http://dx.doi.org/10.21467/proceedings.114.62.

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This paper analyses the different parameters of tunnel field-effect transistor (TFET) based on silicon Nanowire in vertical nature by using a Gaussian doping profile. The device has been designed using an n-channel P+-I-N+ structure for tunneling junction of TFET with gate-all-around (GAA) Nanowire structure. The gate length has been taken as 100 nm using silicon Nanowire to obtain the various parameters such as ON-current (ION), OFF-current (IOFF), current ratio, and Subthreshold slope (SS) by applying different values of work function at the gate, the radius of Nanowire and oxide thickness of the device. The simulations are performed on Silvaco TCAD which gives a better parametric analysis over conventional tunnel field-effect transistor.
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Seo, Jae Hwa, Young Jun Yoon, Ra Hee Kwon, Young In Jang, and In Man Kang. "Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems." In 2016 International Conference on Information Networking (ICOIN). IEEE, 2016. http://dx.doi.org/10.1109/icoin.2016.7427155.

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7

Li, J., S. Mochizuki, E. Stuckert, et al. "Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure." In ISTFA 2022. ASM International, 2022. http://dx.doi.org/10.31399/asm.cp.istfa2022p0074.

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Abstract Non-planar semiconductor devices, such as vertical fin-based field-effect transistor (FinFET) devices have been developed that include multiple vertical fins serving as conducting channel regions to enable larger effective conduction width in a small layout area. However, as circuits are scaled to smaller dimensions, it has become increasingly difficult to improve the performance of FinFET devices. Stacked nanosheet FETs have been developed to further enable larger effective conduction width in a given small layout area while enabling gate length scaling. Nanosheet (NS) FET devices have attracted attention as a candidate to replace FinFET technology at the 5 nm technology node and beyond due to their excellent electrostatics and short channel control. The use of silicon-germanium for the channel material has been explored as a major technology element for FinFET CMOS technology, and the performance benefits of Si-Ge channel over silicon channel have been demonstrated. Compared with conventional FinFET, stacked gate-all-around (GAA) NS CMOS shows higher electron mobility for nFET but lower hole mobility for pFET due to its unique device architecture and carrier transport direction. To improve pFET performance, SiGe NS is proposed as the pFET channel material. However, introducing and maintaining strain in the SiGe GAA NS channel is challenging but important for improving carrier transport. It is critical to understand the strain distribution in the advanced 3D nanosheet FET structures. This paper describes the use of advanced transmission electron microscopy (TEM) techniques to investigate the strain distribution in strained SiGe channel NS pFET through Si channel trimming and selective Si1-xGex epitaxial growth. A stacked GAA NS pFET was fabricated from compressively strained Si1-xGex channel with good crystallinity and high uniaxial compressive stress of ~1 GPa. From lattice deformation maps with a nanometer spatial resolution obtained by TEM techniques, the authors demonstrate that nano-beam precession electron diffraction techniques can be used to investigate the local strain distribution of the stacked GAA NS pFET devices with high precision, and thus help to optimize the integration process and strain engineering for pFET device performance enhancement for the next generation of CMOS logic in GAA NS technology.
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Chatterjee, Neel, and Sujata Pandey. "Modelling and simulation of Si and InAs gate all around (GAA) nanowire transistors." In 2015 Annual IEEE India Conference (INDICON). IEEE, 2015. http://dx.doi.org/10.1109/indicon.2015.7443527.

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Wang, Luhao, Tiansong Cui, Shahin Nazarian, Yanzhi Wang, and Massoud Pedram. "Standard cell library based layout characterization and power analysis for 10nm gate-all-around (GAA) transistors." In 2016 29th IEEE International System-on-Chip Conference (SOCC). IEEE, 2016. http://dx.doi.org/10.1109/socc.2016.7905480.

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Ahn, Min-Ju, Takuya Saraya, Masaharu Kobayashi, and Toshiro Hiramoto. "Superior subthreshold slope of gate-all-around (GAA) p-type poly-Si junctionless nanowire transistors with highly suppressed grain boundary defects." In 2020 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2020. http://dx.doi.org/10.1109/snw50361.2020.9131416.

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