Log in

Relevant bibliographies by topics / GATE Monte Carlo simulations / Journal articles

To see the other types of publications on this topic, follow the link: GATE Monte Carlo simulations.

Journal articles on the topic 'GATE Monte Carlo simulations'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'GATE Monte Carlo simulations.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Kathawala, G. A., B. Winstead, and U. Ravaioli. "Monte Carlo simulations of double-gate MOSFETs." IEEE Transactions on Electron Devices 50, no. 12 (December 2003): 2467–73. http://dx.doi.org/10.1109/ted.2003.819699.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Asenov, A., S. Babiker, S. P. Beaumont, and J. R. Barker. "Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs." VLSI Design 8, no. 1-4 (January 1, 1998): 319–23. http://dx.doi.org/10.1155/1998/72453.

Full text

Abstract:

In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the average velocity in the channel obtained from Monte Carlo (MC) simulation. To illustrate our approach we compare enhanced DD and MC simulation results for a pseudomorphic HEMTs with 0.12 μm channel length, which are in good agreement. The usefulness of the described methodology is illustrated in a simulation example of self aligned gamma gate pseudomorphic HEMTs. The effect of the gamma gate shape and the self aligned contacts on the overall device performance has been investigated.

APA, Harvard, Vancouver, ISO, and other styles

3

Camarasu-Pop, Sorina, Tristan Glatard, Jakub T. Mościcki, Hugues Benoit-Cattin, and David Sarrut. "Dynamic Partitioning of GATE Monte-Carlo Simulations on EGEE." Journal of Grid Computing 8, no. 2 (March 23, 2010): 241–59. http://dx.doi.org/10.1007/s10723-010-9153-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Buvat, Irène, and Delphine Lazaro. "Monte Carlo simulations in emission tomography and GATE: An overview." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 569, no. 2 (December 2006): 323–29. http://dx.doi.org/10.1016/j.nima.2006.08.039.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Babiker, S., A. Asenov, J. R. Barker, and S. P. Beaumont. "Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs." VLSI Design 6, no. 1-4 (January 1, 1998): 127–30. http://dx.doi.org/10.1155/1998/51378.

Full text

Abstract:

The complex recess and gate shape of modem compound FETs greatly affect the device parasitics and therefore impose the need for proper description of the device geometry and surface conditions in any practical device simulations. In this paper we describe a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. The module combines realistic quadrilateral finite-element description of the device geometry with realistic particle simulation of the non-equilibrium hot carrier transport in short recess gate compound FETs. A Single Programme Multiple Data (SPMD) parallel approach makes it possible to use our MC simulator for practical design work, generating the necessary I-V characteristics in parallel. The capabilities of the finite element MC module are illustrated in example simulations of a 200nm pseudomorphic HEMT fabricated in the Nanoelectronics Research Centre of Glasgow University.

APA, Harvard, Vancouver, ISO, and other styles

6

Ravishankar, R., G. Kathawala, U. Ravaioli, S. Hasan, and M. Lundstrom. "Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs." Journal of Computational Electronics 4, no. 1-2 (April 2005): 39–43. http://dx.doi.org/10.1007/s10825-005-7104-y.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Sarrut, David, Mateusz Bała, Manuel Bardiès, Julien Bert, Maxime Chauvin, Konstantinos Chatzipapas, Mathieu Dupont, et al. "Advanced Monte Carlo simulations of emission tomography imaging systems with GATE." Physics in Medicine & Biology 66, no. 10 (May 14, 2021): 10TR03. http://dx.doi.org/10.1088/1361-6560/abf276.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Kelsall, R. W., and A. J. Lidsey. "Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations." VLSI Design 8, no. 1-4 (January 1, 1998): 21–27. http://dx.doi.org/10.1155/1998/57936.

Full text

Abstract:

The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self-consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states. Comparisons between the new model and a standard semi-classical Monte Carlo model are presented for a 0.1 μm gate-length In0.52Al0.48As/In0.53 Ga0.47As/InP MODFET. Whilst the quantum model yields minor corrections in the predicted output characteristics, it is found that these results can be achieved without repeated iterations of the Schrodinger equation.

APA, Harvard, Vancouver, ISO, and other styles

9

Babiker, S., A. Asenov, N. Cameron, S. P. Beaumont, and J. R. Barker. "Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation." VLSI Design 8, no. 1-4 (January 1, 1998): 313–17. http://dx.doi.org/10.1155/1998/26067.

Full text

Abstract:

In this paper we described a complete methodology to extract the RF performance of ‘real’ compound FETs from time domain Ensemble Monte-Carlo (EMC) simulations which can be used for practical device design. The methodology is based on transient finite element EMC simulation of realistic device geometry. The extraction of the terminal current is based on the Ramo-Shockley theorem. Parasitic elements like the gate and contact resistances are included in the RF analysis at the post-processing stage. Example of the RF analysis of pseudomorphic HEMTs illustrates our approach.

APA, Harvard, Vancouver, ISO, and other styles

10

Pennathur, S., Can K. Sandalci, Çetin K. Koç, and S. M. Goodnick. "3D Parallel Monte Carlo Simulation of GaAs MESFETs." VLSI Design 6, no. 1-4 (January 1, 1998): 273–76. http://dx.doi.org/10.1155/1998/64531.

Full text

Abstract:

We have investigated three-dimensional (3D) effects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have been simulated for both the gate width in the third dimension as well as the gate length. For realistic 3D device structures, we find that the main performance bottleneck is the Poisson solver rather than the Monte Carlo particle simulator for the parallel successive overrelaxation (SOR) scheme employed in [1]. A parallel multigrid algorithm is reported and compared to the previous SOR implementation, where considerable speedup is obtained.

APA, Harvard, Vancouver, ISO, and other styles

11

Liu, Hao Jia, and Shu Jun Zhao. "Overview of PeneloPET: A PET-Dedicated Monte Carlo Simulation Toolkit." Applied Mechanics and Materials 602-605 (August 2014): 3565–69. http://dx.doi.org/10.4028/www.scientific.net/amm.602-605.3565.

Full text

Abstract:

PeneloPET is a PET-dedicated Monte Carlo simulation toolkit, which is based on PENELOPE. This article describes the characteristics and the general process of PeneloPET simulation. Then we compare the simulation results of PeneloPET and GATE to model the GE Healthcare eXplore Vista microPET system respectively, including sensitivity and noise equivalent count rate. The results show that PeneloPET simulation data corresponds with the data from real scanners and GATE simulation, and proves PeneloPET is an accurate toolkit for PET simulation.

APA, Harvard, Vancouver, ISO, and other styles

12

Staelens, Steven, Daniel Strul, Giovanni Santin, Stefaan Vandenberghe, Michel Koole, Yves D Asseler, Ignace Lemahieu, and Rik Van de Walle. "Monte Carlo simulations of a scintillation camera using GATE: validation and application modelling." Physics in Medicine and Biology 48, no. 18 (September 4, 2003): 3021–42. http://dx.doi.org/10.1088/0031-9155/48/18/305.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Gothandaraman, Akila, Gregory D. Peterson, G. Lee Warren, Robert J. Hinde, and Robert J. Harrison. "A Pipelined and Parallel Architecture for Quantum Monte Carlo Simulations on FPGAs." VLSI Design 2010 (February 28, 2010): 1–8. http://dx.doi.org/10.1155/2010/946486.

Full text

Abstract:

Recent advances in Field-Programmable Gate Array (FPGA) technology make reconfigurable computing using FPGAs an attractive platform for accelerating scientific applications. We develop a deeply pipelined and parallel architecture for Quantum Monte Carlo simulations using FPGAs. Quantum Monte Carlo simulations enable us to obtain the structural and energetic properties of atomic clusters. We experiment with different pipeline structures for each component of the design and develop a deeply pipelined architecture that provides the best performance in terms of achievable clock rate, while at the same time has a modest use of the FPGA resources. We discuss the details of the pipelined and generic architecture that is used to obtain the potential energy and wave function of a cluster of atoms.

APA, Harvard, Vancouver, ISO, and other styles

14

Assié, Karine, Vincent Breton, Irène Buvat, Claude Comtat, Sébastien Jan, Magalie Krieguer, Delphine Lazaro, et al. "Monte Carlo simulation in PET and SPECT instrumentation using GATE." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 527, no. 1-2 (July 2004): 180–89. http://dx.doi.org/10.1016/j.nima.2004.03.117.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Saint-Martin, J., A. Bournel, and P. Dollfus. "Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation." Solid-State Electronics 50, no. 1 (January 2006): 94–101. http://dx.doi.org/10.1016/j.sse.2005.10.043.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Babiker, S., A. Asenov, J. R. Barker, and S. P. Beaumont. "Finite element Monte Carlo simulation of recess gate compound FFTs." Solid-State Electronics 39, no. 5 (May 1996): 629–35. http://dx.doi.org/10.1016/0038-1101(95)00185-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Schmidtlein, C. Ross, Assen S. Kirov, Sadek A. Nehmeh, Yusuf E. Erdi, John L. Humm, Howard I. Amols, Luc M. Bidaut, et al. "Validation of GATE Monte Carlo simulations of the GE Advance/Discovery LS PET scanners." Medical Physics 33, no. 1 (December 28, 2005): 198–208. http://dx.doi.org/10.1118/1.2089447.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Zioga, M., J. Menis, S. Apostolopoulou, D. Maintas, M. Mikeli, A. Nikopoulou, A. N. Rapsomanikis, and E. Stiliaris. "GEANT4/GATE Simulation Studies in the Emission Tomography." HNPS Proceedings 19 (January 1, 2020): 50. http://dx.doi.org/10.12681/hnps.2515.

Full text

Abstract:

Radiotracer imaging studies for a small field, high resolution ∞-Camera system and a clinical system for Positron Emission Tomography (PET) by means of GATE (GEANT4 Application for Tomographic Emission) simulations are presented in this work. In a validation phase, which preceded the main study, experimentally obtained results for planar images with the existing ∞-Camera system were directly compared to simulated data. A simple phantom structure, consisting of four parallel capillaries filled with 99mTc water solution, was imaged by the γ-Camera system for several phantom-collimator distances and the measured and Monte-Carlo calculated spatial projections were compared. The major objective of this validation study was the optimal description of the most important components, the hexagonal, parallel-hole Pb-collimator and the pixelated CsI scintillation crystal of the γ-imaging system in terms of GATE components. In the main study, a GATE simulation setup for this ∞-Camera detector is used and Monte-Carlo data are accumulated for simple geometrical phantoms with different monophotonic radiotracer energies and relative intensities. In parallel, a commercially available cylindrical shaped PET scanner ring, consisting of 32 sectors with 4 x 6 x 6 LSO scintillation crystals, has been constructed in the GATE environment. Simulation data are obtained for the most usual positron emitters (18F, 11C and 15O) and for several phantom geometries. The spatial resolution of both systems and their overall performance is presented and discussed in this study.

APA, Harvard, Vancouver, ISO, and other styles

19

Ton, N. D. Ton, B. D. Linh Linh, and Q. T. Pham Pham. "Dosimetric characteristics of 6 MV photons from TrueBeam STx medical linear accelerator: simulation and experimental data." Nuclear Science and Technology 9, no. 2 (June 15, 2019): 37–44. http://dx.doi.org/10.53747/jnst.v9i2.51.

Full text

Abstract:

A TrueBeam STx is one of the most technologically advanced linear accelerators forradiotherapy and radiosurgery. The Monte Carlo simulation widely used in many applications in various fields such as nuclear physics, astrophysics, particle physics, and medicine. The Geant4/GATE Monte Carlo toolkit is developed for the simulation in imaging diagnostics, nuclear medicine, radiotherapy, and radiation biology to more accurately predict beam radiation dosimetry. In this work, we present the simulation results of the dosimetric characteristics of a 6 MV photon beam of TrueBeam STx medical LINAC using Monte Carlo Geant4/GATE. The percentage depth dose (PDD), central axis depth dose (Profile) have been simulated and compared with those measured in a water phantom for field sizes 10×10 cm2 via the gamma-index method. These results will permit to check calculation data given by the treatment planning system.

APA, Harvard, Vancouver, ISO, and other styles

20

Ricci, Rita, Theodora Kostou, Konstantinos Chatzipapas, Eleftherios Fysikopoulos, George Loudos, Luigi Montalto, Lorenzo Scalise, Daniele Rinaldi, and Stratos David. "Monte Carlo Optical Simulations of a Small FoV Gamma Camera. Effect of Scintillator Thicknesses and Septa Materials." Crystals 9, no. 8 (August 1, 2019): 398. http://dx.doi.org/10.3390/cryst9080398.

Full text

Abstract:

Optical Monte Carlo simulations have been extensively used for the accurate modeling of light transport in scintillators for the improvement of detector designs. In the present work, a GATE Monte Carlo toolkit was used to study the effect of scintillator thicknesses and septa materials in the performance parameters evaluation of a commercially available small animal gamma-optical camera, named “γ-eye”. Firstly, the simulated γ-eye system was validated against experimental data. Then, part of the validated camera was modeled defining all of the optical properties by means of the UNIFIED model of GATE. Different CsI:Na scintillator crystals with varying thicknesses (from 4 mm up to 6 mm) and different reflector (septa) materials were simulated and compared in terms of sensitivity, light output and spatial resolution. Results have demonstrated the reliability of the model and indicate that the thicker crystal array presents higher sensitivity values, but degraded spatial resolution properties. Moreover, the use of black tape around crystals leads to an improvement in spatial resolution values compared to a standard white reflector material.

APA, Harvard, Vancouver, ISO, and other styles

21

AYUBI-MOAK, J. S., K. KALNA, and A. ASENOV. "MONTE CARLO SIMULATIONS OF In0.75Ga0.25As MOSFETs AT 0.5 V SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 93–100. http://dx.doi.org/10.1142/s0129156409006126.

Full text

Abstract:

The performance of implant-free (IF), n-type III-V MOSFETs with an In 0.75 Ga 0.25 As channel have been evaluated using a 2D finite-element Monte Carlo device simulator. We investigate the device performance of a set of scaled transistors with gate lengths of 30, 20 and 15 nm at a drain bias of 0.5 V to determine whether this novel architecture can deliver the high drain current at low bias conditions required for high-performance CMOS applications.

APA, Harvard, Vancouver, ISO, and other styles

22

Langer, Max, Zhenjie Cen, Simon Rit, and Jean M. Létang. "Towards Monte Carlo simulation of X-ray phase contrast using GATE." Optics Express 28, no. 10 (April 28, 2020): 14522. http://dx.doi.org/10.1364/oe.391471.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Jan, S., C. Comtat, D. Strul, G. Santin, and R. Trebossen. "Monte Carlo Simulation for the ECAT EXACT HR+ system using GATE." IEEE Transactions on Nuclear Science 52, no. 3 (June 2005): 627–33. http://dx.doi.org/10.1109/tns.2005.851461.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Kathawala, Gulzar A., Mohamed Mohamed, and Umberto Ravaioli. "Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation." Journal of Computational Electronics 2, no. 2-4 (December 2003): 85–89. http://dx.doi.org/10.1023/b:jcel.0000011404.60973.8a.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Kuzuhara, Masaaki, Tomohiro Itoh, and Karl Hess. "Ensemble Monte Carlo simulation of sub-0.1μm gate length GaAs MESFETs." Solid-State Electronics 32, no. 12 (December 1989): 1857–61. http://dx.doi.org/10.1016/0038-1101(89)90325-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Kalna, K., A. Asenov, K. Elgaid, and I. Thayne. "Scaling of pHEMTs to Decanano Dimensions." VLSI Design 13, no. 1-4 (January 1, 2001): 435–39. http://dx.doi.org/10.1155/2001/19759.

Full text

Abstract:

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.

APA, Harvard, Vancouver, ISO, and other styles

27

Lee, JunKyu, Gregory D. Peterson, Robert J. Harrison, and Robert J. Hinde. "Implementation of Hardware-Accelerated Scalable Parallel Random Number Generators." VLSI Design 2010 (March 1, 2010): 1–11. http://dx.doi.org/10.1155/2010/930821.

Full text

Abstract:

The Scalable Parallel Random Number Generators (SPRNGs) library is widely used in computational science applications such as Monte Carlo simulations since SPRNG supports fast, parallel, and scalable random number generation with good statistical properties. In order to accelerate SPRNG, we develop a Hardware-Accelerated version of SPRNG (HASPRNG) on the Xilinx XC2VP50 Field Programmable Gate Arrays (FPGAs) in the Cray XD1 that produces identical results. HASPRNG includes the reconfigurable logic for FPGAs along with a programming interface which performs integer random number generation. To demonstrate HASPRNG for Reconfigurable Computing (RC) applications, we also develop a Monte Carlo π-estimator for the Cray XD1. The RC Monte Carlo π-estimator shows a 19.1× speedup over the 2.2 GHz AMD Opteron processor in the Cray XD1. In this paper we describe the FPGA implementation for HASPRNG and a π-estimator example application exploiting the fine-grained parallelism and mathematical properties of the SPRNG algorithm.

APA, Harvard, Vancouver, ISO, and other styles

28

Yamakawa, S., H. Ueno, K. Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, and U. Ravaioli. "Electron Mobility and Monte Carlo device simulation of MOSFETs." VLSI Design 6, no. 1-4 (January 1, 1998): 27–30. http://dx.doi.org/10.1155/1998/92737.

Full text

Abstract:

The electron mobility in the inversion layer of a MOSFET, formed on the (100) silicon surface, is calculated by using a Monte Carlo approach which takes into account size quantization, acoustic phonon scattering, intervalley phonon scattering and surface roughness scattering. Degeneracy is also considered because it is important at higher normal effective fields (high gate voltages). The main emphasis is placed on the influence of the specific autocovariance function, used to describe the surface roughness, on the electron mobility. It is found that the electron mobility calculated with roughness scattering rates based on the exponential function shows a good agreement with experiments. Device simulation of a MOSFET is carried out to demonstrate the usefulness of the present model, where 3D electron states are taken into account in addtion to the 2D electron states.

APA, Harvard, Vancouver, ISO, and other styles

29

GÁMIZ, FRANCISCO, CARLOS SAMPEDRO, LUCA DONETTI, and ANDRES GODOY. "MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs." International Journal of High Speed Electronics and Systems 22, no. 01 (November 2013): 1350001. http://dx.doi.org/10.1142/s0129156413500018.

Full text

Abstract:

State-of-the-Art devices are approaching to the performance limit of traditional MOSFET as the critical dimensions are shrunk. Ultrathin fully depleted Silicon-on-Insulator transistors and multi-gate devices based on SOI technology are the best candidates to become a standard solution to overcome the problems arising from such aggressive scaling. Moreover, the flexibility of SOI wafers and processes allows the use of different channel materials, substrate orientations and layer thicknesses to enhance the performance of CMOS circuits. From the point of view of simulation, these devices pose a significant challenge. Simulations tools have to include quantum effects in the whole structure to correctly describe the behavior of these devices. The Multi-Subband Monte Carlo (MSB-MC) approach constitutes today's most accurate method for the study of nanodevices with important applications to SOI devices. After reviewing the main basis of MSB-MC method, we have applied it to answer important questions which remain open regarding ultimate SOI devices. In the first part of the chapter we present a thorough study of the impact of different Buried OXide (BOX) configurations on the scaling of extremely thin fully depleted SOI devices using a Multi-Subband Ensemble Monte Carlo simulator (MS-EMC). Standard thick BOX, ultra thin BOX (UTBOX) and UTBOX with ground plane (UTBOX+GP) solutions have been considered in order to check their influence on short channel effects (SCEs). The simulations show that the main limiting factor for downscaling is the DIBL and the UTBOX+GP configuration is the only valid one to downscale SGSOI transistors beyond 20 nm channel length keeping the silicon slab thickness above the theoretical limit of 5 nm, where thickness variability and mobility reduction would play an important role. In the second part, we have used the multisubband Ensemble Monte Carlo simulator to study the electron transport in ultrashort DGSOI devices with different confinement and transport directions. Our simulation results show that transport effective mass, and subband redistribution are the main factors that affect drift and scattering processes and, therefore, the general performance of DGSOI devices when orientation is changed

APA, Harvard, Vancouver, ISO, and other styles

30

Banchuin, Rawid. "Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET." Journal of Electrical and Computer Engineering 2013 (2013): 1–10. http://dx.doi.org/10.1155/2013/189436.

Full text

Abstract:

The novel probabilistic models of the random variations in nanoscale MOSFET's high frequency performance defined in terms of gate capacitance and transition frequency have been proposed. As the transition frequency variation has also been considered, the proposed models are considered as complete unlike the previous one which take only the gate capacitance variation into account. The proposed models have been found to be both analytic and physical level oriented as they are the precise mathematical expressions in terms of physical parameters. Since the up-to-date model of variation in MOSFET's characteristic induced by physical level fluctuation has been used, part of the proposed models for gate capacitance is more accurate and physical level oriented than its predecessor. The proposed models have been verified based on the 65 nm CMOS technology by using the Monte-Carlo SPICE simulations of benchmark circuits and Kolmogorov-Smirnov tests as highly accurate since they fit the Monte-Carlo-based analysis results with 99% confidence. Hence, these novel models have been found to be versatile for the statistical/variability aware analysis/design of nanoscale MOSFET-based analog/mixed signal circuits and systems.

APA, Harvard, Vancouver, ISO, and other styles

31

Bretin, Florian, Mohamed Ali Bahri, André Luxen, Christophe Phillips, Alain Plenevaux, and Alain Seret. "Monte Carlo simulations of the dose from imaging with GE eXplore 120 micro-CT using gate." Medical Physics 42, no. 10 (September 9, 2015): 5711–19. http://dx.doi.org/10.1118/1.4930056.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Chen, Chia-Lin, Yuchuan Wang, Jason J. S. Lee, and Benjamin M. W. Tsui. "Integration of SimSET photon history generator in GATE for efficient Monte Carlo simulations of pinhole SPECT." Medical Physics 35, no. 7Part1 (June 24, 2008): 3278–84. http://dx.doi.org/10.1118/1.2940159.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Milano, Alessia, Alex Vergara Gil, Enrico Fabrizi, Marta Cremonesi, Ivan Veronese, Salvatore Gallo, Nico Lanconelli, Riccardo Faccini, and Massimiliano Pacilio. "In Silico Validation of MCID Platform for Monte Carlo-Based Voxel Dosimetry Applied to 90Y-Radioembolization of Liver Malignancies." Applied Sciences 11, no. 4 (February 23, 2021): 1939. http://dx.doi.org/10.3390/app11041939.

Full text

Abstract:

The aim was the validation of a platform for internal dosimetry, named MCID, based on patient-specific images and direct Monte Carlo (MC) simulations, for radioembolization of liver tumors with 90Y-labeled microspheres. CT of real patients were used to create voxelized phantoms with different density and activity maps. SPECT acquisitions were simulated by the SIMIND MC code. Input macros for the GATE/Geant4 code were generated by MCID, loading coregistered morphological and functional images and performing image segmentation. The dosimetric results obtained from the direct MC simulations and from conventional MIRD approach at both organ and voxel level, in condition of homogeneous tissues, were compared, obtaining differences of about 0.3% and within 3%, respectively, whereas differences increased (up to 14%) introducing tissue heterogeneities in phantoms. Mean absorbed dose for spherical regions of different sizes (10 mm ≤ r ≤ 30 mm) from MC code and from OLINDA/EXM were also compared obtaining differences varying in the range 7–69%, which decreased to 2–9% after correcting for partial volume effects (PVEs) from imaging, confirming that differences were mostly due to PVEs, even though a still high difference for the smallest sphere suggested possible source description mismatching. This study validated the MCID platform, which allows the fast implementation of a patient-specific GATE simulation, avoiding complex and time-consuming manual coding. It also points out the relevance of personalized dosimetry, accounting for inhomogeneities, in order to avoid absorbed dose misestimations.

APA, Harvard, Vancouver, ISO, and other styles

34

ARABSHAHI, H. "COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD." Modern Physics Letters B 23, no. 08 (March 30, 2009): 1101–9. http://dx.doi.org/10.1142/s0217984909019235.

Full text

Abstract:

The steady-state and transient electron transport in ZnO field effect transistor have been studied using an ensemble Monte Carlo simulation which takes into account the hot-electron transport phenomena. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted I–V and transfer charateristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have also been carried out to test the device response and derived the frequency bandwidth. The value of 80 ± 5 GHz has been derived for the intrinsic current gain cut-off frequency of the ZnO MESFETs.

APA, Harvard, Vancouver, ISO, and other styles

35

Sheen, Heesoon, Ki Chun Im, Yong Choi, Hanback Shin, Youngyih Han, Kwangzoo Chung, Junsang Cho, and Sang Hee Ahn. "GATE Monte Carlo simulation of GE Discovery 600 and a uniformity phantom." Journal of the Korean Physical Society 65, no. 11 (December 2014): 1802–8. http://dx.doi.org/10.3938/jkps.65.1802.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Kang, Han Gyu, Seong Hyun Song, Young Been Han, Kyeong Min Kim, and Seong Jong Hong. "Lens implementation on the GATE Monte Carlo toolkit for optical imaging simulation." Journal of Biomedical Optics 23, no. 02 (February 14, 2018): 1. http://dx.doi.org/10.1117/1.jbo.23.2.026003.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Mkimel, M., R. El Baydaoui, M. R. Mesradi, Z. Tahiri, K. Talasmat, A. Halimi, M. Krim, E. Saad, and A. Hilali. "Monte Carlo Simulation of the Computed Tomography Dose Index (CTDI) Using GATE." Physics of Particles and Nuclei Letters 17, no. 6 (November 2020): 900–907. http://dx.doi.org/10.1134/s1547477120060084.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Bufler, F. M., A. Schenk, and W. Fichtner. "Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs." Journal of Computational Electronics 2, no. 2-4 (December 2003): 81–84. http://dx.doi.org/10.1023/b:jcel.0000011403.57401.55.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Sampedro, Carlos, Francisco Gámiz, and Andrés Godoy. "Quantum-Corrected Monte Carlo Simulation of Double Gate Silicon on Insulator Transistors." Journal of Computational and Theoretical Nanoscience 5, no. 6 (June 1, 2008): 1046–57. http://dx.doi.org/10.1166/jctn.2008.2540.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Saint-Martin, J., A. Bournel, V. Aubry-Fortuna, F. Monsef, C. Chassat, and P. Dollfus. "Monte Carlo simulation of double gate MOSFET including multi sub-band description." Journal of Computational Electronics 5, no. 4 (December 9, 2006): 439–42. http://dx.doi.org/10.1007/s10825-006-0043-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Momennezhad, Mehdi, Ramin Sadeghi, and Shahrokh Nasseri. "Development of GATE Monte Carlo simulation for a dual-head gamma camera." Radiological Physics and Technology 5, no. 2 (May 16, 2012): 222–28. http://dx.doi.org/10.1007/s12194-012-0157-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Zarifi, Shiva, Hadi Taleshi Ahangari, Sayyed Bijan Jia, Mohammad Ali Tajik-Mansoury, and Milad Najafzadeh. "GATE MODELING OF LATERAL SCATTERING OF PROTON PENCIL BEAMS." Radiation Protection Dosimetry 189, no. 1 (February 28, 2020): 76–88. http://dx.doi.org/10.1093/rpd/ncaa015.

Full text

Abstract:

Abstract To validate the GATE Monte Carlo simulation code and to investigate the lateral scattering of proton pencil beams in the major body tissue elements in the therapeutic energy range. In this study, GATE Monte Carlo simulation code was used to compute absorbed dose and fluence of protons in a water cubic phantom for the clinical energy range. To apply the suitable physics model for simulation, different physics lists were investigated. The present research also investigated the optimal value of the water ionization potential as a simulation parameter. Thereafter, the lateral beam profile of proton pencil beams were simulated at different energies and depths in body tissue elements. The range results obtained using the QGSP_BIC_EMY physics showed the best compatibility with the NIST database data. Moreover, it was found that the 76 eV is the optimal value for the water ionization potential. In the next step, it was shown that the beam halo can be described by adding a supplementary Gaussian function to the standard single-Gaussian model, which currently is used by treatment planning systems (TPS).

APA, Harvard, Vancouver, ISO, and other styles

43

Roy, S., A. Asenov, S. Babiker, J. R. Barker, and S. P. Beaumont. "RF Performance of Si/SiGe MODFETs: A Simulation Study." VLSI Design 8, no. 1-4 (January 1, 1998): 325–30. http://dx.doi.org/10.1155/1998/29629.

Full text

Abstract:

The microwave performance potential of Si/SiGe pseudomorphic MODFETs are studied, in comparison to state of the art InGaAs pseudomorphic HEMTs. Both devices have equivalent structures corresponding to a physical HEMT used for calibration. We use an RF analysis technique based on transient Monte Carlo simulations to estimate the intrinsic noise figures, the RF figures of merit fT and fmax, and the effect of contact and gate resistances. Both devices exhibit velocity overshoot below the gate region. It is shown that the difference in noise figures and fT values can be mainly attributed to differences in device channel velocity, fmax exhibits a strong dependence on device contact resistance, eroding some of the performance advantage of the pseudomorphic HEMT.

APA, Harvard, Vancouver, ISO, and other styles

44

Xu, Kun Yuan, Z. N. Wang, and Y. N. Wang. "Steady and Transient Properties of Side-Gated Nano-Transistors." Applied Mechanics and Materials 475-476 (December 2013): 1363–67. http://dx.doi.org/10.4028/www.scientific.net/amm.475-476.1363.

Full text

Abstract:

Using a two-dimensional ensemble Monte Carlo (EMC) method, the steady and transient properties of side-gated nanotransistors with single gate and double gate are studied in detail. Simulation results show that the double-gated nanotransistor has more powerful controlling ability on the channel than the single-gated one. The transient processes of the drain current for the two devices are both about 3 ps, which imply that the working speed of the two devices may reach about 0.3 THz. The detail of transient processes for the double-gated nanotransistor is trivial. But for the single-gated nanotransistor, the drain current response shows obviously oscillating during approaching the next steady state. The phenomenon of drain current oscillations is also discussed.

APA, Harvard, Vancouver, ISO, and other styles

45

Papadimitroulas, Panagiotis, George Loudos, George C. Nikiforidis, and George C. Kagadis. "A dose point kernel database using GATE Monte Carlo simulation toolkit for nuclear medicine applications: Comparison with other Monte Carlo codes." Medical Physics 39, no. 8 (August 1, 2012): 5238–47. http://dx.doi.org/10.1118/1.4737096.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Rad, S. Z. Islami, R. Gholipour Peyvandi, and M. K. Sadeghi. "A GATE Monte Carlo model for a newly developed small animal PET scanner: the IRI-microPET." Polish Journal of Medical Physics and Engineering 25, no. 2 (June 1, 2019): 93–100. http://dx.doi.org/10.2478/pjmpe-2019-0013.

Full text

Abstract:

Abstract Monte Carlo simulation is widely used in emission tomography, in order to assess image reconstruction algorithms and correction techniques, for system optimization, and study the parameters affecting the system performance. In the current study, the performance of the IRI-microPET system was simulated using the GATE Monte Carlo code and a number of performance parameters, including spatial resolution, scatter fraction, sensitivity, RMS contrast, and signal-to-noise ratio, evaluated and compared to the corresponding measured values. The results showed an excellent agreement between simulated and measured data: The experimental and simulated spatial resolutions (radial) for 18F in the center of the AFOV were 1.81 mm and 1.65 mm, respectively. The difference between the experimental and simulated sensitivities of the system was <7%. Simulated and experimental scatter fractions differed less than 9% for the mouse phantom in different timing windows. The validation study of the image quality indicated a good agreement in RMS contrast and signal-to-noise ratio. Also, system performance was compared with the two available commercial scanners which were simulated using GATE code. In conclusion, the assessment of the Monte Carlo modeling of the IRI-microPET system reveals that the GATE code is a flexible and accurate tool for describing the response of an animal PET system.

APA, Harvard, Vancouver, ISO, and other styles

47

Imbert, L., E. Galbrun, S. Poussier, D. Wolf, G. Karcher, A. Noel, and P. Y. Marie. "Modélisation numérique de la camera à semi-conducteurs DSPECT avec la plateforme de simulations Monte Carlo Gate." Médecine Nucléaire 37, no. 5 (May 2013): 145–46. http://dx.doi.org/10.1016/j.mednuc.2013.03.048.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Endoh, Akira, Keisuke Shinohara, Yuji Awano, Kohki Hikosaka, Toshiaki Matsui, and Takashi Mimura. "Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations." Japanese Journal of Applied Physics 49, no. 1 (January 20, 2010): 014301. http://dx.doi.org/10.1143/jjap.49.014301.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Frank, D. J., S. E. Laux, and M. V. Fischetti. "Monte Carlo simulations of p- and n-channel dual-gate Si MOSFET's at the limits of scaling." IEEE Transactions on Electron Devices 40, no. 11 (1993): 2103. http://dx.doi.org/10.1109/16.239768.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

GUERRA, DIEGO, FABIO ALESSIO MARINO, STEPHEN GOODNICK, DAVID FERRY, and MARCO SARANITI. "EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 423–30. http://dx.doi.org/10.1142/s0129156411006714.

Full text

Abstract:

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!