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Journal articles on the topic 'Gated cathode'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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1

Han, Jin-Woo, Myeong-Lok Seol, and M. Meyyappan. "A nanoscale vacuum field emission gated diode with an umbrella cathode." Nanoscale Advances 3, no. 6 (2021): 1725–29. http://dx.doi.org/10.1039/d1na00004g.

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A nanoscale field emission vacuum channel gated diode with an umbrella-like cathode is fabricated. The bottom silicon plate is the gate with the anode located between the cathode and the gate, which reduces leakage current.

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2

Miyanaga, N., H. Oida, M. Yamanaka, et al. "Gated neutron streak camera with a uranium cathode." Review of Scientific Instruments 61, no. 11 (1990): 3592–95. http://dx.doi.org/10.1063/1.1141576.

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3

Miyanaga, N., H. Oida, M. Yamanaka, et al. "Gated neutron streak camera with a uranium cathode (abstract)." Review of Scientific Instruments 61, no. 10 (1990): 3231. http://dx.doi.org/10.1063/1.1141646.

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4

Jamison, Keith D., Byron G. Zollars, Donald E. Patterson, et al. "Gated carbon-based cold cathode for high current applications." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 4 (2003): 1738. http://dx.doi.org/10.1116/1.1587135.

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5

Wang, Qing, Wen Qiang Dang, Xiao Wen Mu, Jian Feng Dai, and Wei Xue Li. "Study on Field Emission Characteristics of Normal-Gated and Under-Gated Carbon Nanotube Cold Cathode." Applied Mechanics and Materials 55-57 (May 2011): 1845–50. http://dx.doi.org/10.4028/www.scientific.net/amm.55-57.1845.

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Based on the classical electrostatic theory, the distributions of potential and electrical field at the apex of the carbon nanotubes (CNTs), both in normal-gate type triode structure and under-gate type triode structure, were simulated and calculated respectively. The gate electrode's position and gate aperture's effect on CNTs' field emission characteristics were analyzed. The results indicate that under-gate structure, compared with normal-gate structure, has better field emission performance and lower threshold voltage. Both the gate aperture and the distance between gate electrode and CNTs' apex have crucial effect on field enhancement factors of normal-gate structure and under-gate structure.

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6

Park, Kyung Ho, Woo Jong Seo, Soonil Lee, and Ken Ha Koh. "Triode field emitter with a gated planar carbon-nanoparticle cathode." Applied Physics Letters 81, no. 2 (2002): 358–60. http://dx.doi.org/10.1063/1.1492012.

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7

Sabaut, Lucie, Pascal Ponard, Jean-Paul Mazellier, and Pierre Legagneux. "Electrostatic modeling of an in-plane gated field emission cathode." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 34, no. 2 (2016): 02G101. http://dx.doi.org/10.1116/1.4937908.

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8

Yoshida, Tomoya, Akiyoshi Baba, and Tanemasa Asano. "Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars." Japanese Journal of Applied Physics 43, no. 6B (2004): 3901–5. http://dx.doi.org/10.1143/jjap.43.3901.

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9

Jessing, J. R. "Fabrication and characterization of gated porous silicon cathode field emission arrays." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 2 (1998): 777. http://dx.doi.org/10.1116/1.589903.

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10

Baba, Akiyoshi, and Tanemasa Asano. "Fabrication of a Gated Cold Cathode Using the Inkjet Embedding Method." Japanese Journal of Applied Physics 45, no. 6B (2006): 5631–36. http://dx.doi.org/10.1143/jjap.45.5631.

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11

WU, JIANFENG, LIFENG DONG, JEREMY PETTY, CHIACHING PAN, and JUN JIAO. "FABRICATION AND ELECTRON MICROSCOPY CHARACTERIZATION OF METAL-GATED CARBON NANOTUBE EMITTER ARRAYS." International Journal of Nanoscience 05, no. 04n05 (2006): 579–83. http://dx.doi.org/10.1142/s0219581x06004826.

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A technique was investigated for the fabrication of triode-type carbon nanotube (CNT) field emitter arrays, where an integrated extraction gate was built between the nanotube cathode and the anode. The gate improves the control capability of emission currents. To fabricate the metal-gated CNT field emitter arrays, well ordered cells were generated by focused ion beam (FIB) milling of platinum ( Pt ) coated silicon ( Si ) substrate and then modified by chemical etching. Two types of catalyst elements iron ( Fe ) and nickel ( Ni ), were used for growing the CNTs inside the cells. The methods for depositing catalysts into the cells include spin coating sol–gel Fe , FIB induced decomposition of ferrocene and sputter coating pure Ni . CNT growth was carried out by a chemical vapor deposition (CVD) process. The results suggest that the CNTs grew from inside the cells where the catalysts were located. In comparison, the CNTs synthesized from the sol–gel Fe catalyst were straighter than those from ferrocene Fe and pure Ni . The density and orientation of the CNTs in each cell are directly related to the type and quantity of the catalysts and are also affected by the size of the cells.

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12

Davidson, J. L., W. P. Kang, K. Subramanian, and Y. M. Wong. "Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1863 (2007): 281–93. http://dx.doi.org/10.1098/rsta.2007.2154.

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Nanocarbon-derived electron emission devices, specifically nanodiamond lateral field emission (FE) diodes and gated carbon nanotube (CNT) triodes, are new configurations for robust nanoelectronic devices. These novel micro/nanostructures provide an alternative and efficient means of accomplishing electronics that are impervious to temperature and radiation. For example, nitrogen-incorporated nanocrystalline diamond has been lithographically micropatterned to use the material as an electron field emitter. Arrays of laterally arranged ‘finger-like’ nanodiamond emitters constitute the cathode in a versatile diode configuration with a small interelectrode separation. A low diode turn-on voltage of 7 V and a high emission current of 90 μA at an anode voltage of 70 V (electric field of approx. 7 V μm −1 ) are reported for the nanodiamond lateral device. Also, a FE triode amplifier based on aligned CNTs with a low turn-on voltage and a small gate leakage current has been developed.

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13

Guillorn, M. A., A. V. Melechko, V. I. Merkulov, et al. "Operation of a gated field emitter using an individual carbon nanofiber cathode." Applied Physics Letters 79, no. 21 (2001): 3506–8. http://dx.doi.org/10.1063/1.1419038.

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14

Lei Da, Zeng Le-Yong, Xia Yu-Xue, Chen Song, Liang Jing-Qiu, and Wang Wei-Biao. "Study on field enhancement of a normal-gated field emission nanowire cold cathode." Acta Physica Sinica 56, no. 11 (2007): 6616. http://dx.doi.org/10.7498/aps.56.6616.

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15

Chowdhury, Tazima S., and Haim Grebel. "Ion-Liquid Based Supercapacitors with Inner Gate Diode-Like Separators." ChemEngineering 3, no. 2 (2019): 39. http://dx.doi.org/10.3390/chemengineering3020039.

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In order to minimize unintentional discharge, supercapacitors are interfaced with a membrane that separates the anode from the cathode—this membrane is called the separator. We focus here on separators, which are structured as electronic diode-like. We call an electrically structured separator “the gate”. Through experiments, it was demonstrated that ionic liquid-filled supercapacitors, which were interfaced with gated separators exhibited a substantial capacitance (C) increase and reduction in the equivalent series resistance (ESR) compared to cells with ordinary separators. These two attributes help to increase the energy, which is stored in a cell, since for a given cell’s voltage, the dissipated energy on the cell, UR = V2/4(ESR) and the stored energy, UC = CV2/2, would increase. These were indeed ionic diodes since the order of the diode layout mattered—the diode-like structures exhibited maximum capacitance when their p-side faced the auxiliary electrode.

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16

Yoshida, Tomoya, Akiyoshi Baba, and Tanemasa Asano. "Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, no. 2 (2006): 932. http://dx.doi.org/10.1116/1.2180262.

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17

LEI Da, 雷达, 孟根其其格 MENGGEN Qi-qi-ge, 红鸽 HONG Ge, 陈雷锋 CHEN Lei-feng, 梁静秋 LIANG Jing-qiu, and 王维彪 WANG Wei-biao. "The Effects of Parameters for the Field Emission from Gated Carbon Nanotube Cold Cathode." ACTA PHOTONICA SINICA 43, no. 10 (2014): 1023002. http://dx.doi.org/10.3788/gzxb20144310.1023002.

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18

Giubileo, Filippo, Francesca Urban, Alessandro Grillo, Aniello Pelella, Enver Faella, and Antonio Di Bartolomeo. "Direct Contacting of 2D Nanosheets by Metallic Nanoprobes." Materials Proceedings 4, no. 1 (2020): 16. http://dx.doi.org/10.3390/iocn2020-07931.

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We present a simple and fast methodology to realize metal contacts on two-dimensional nanosheets. In particular, we perform a complete characterization of the transport properties of MoS2 monolayer flakes on SiO2/Si substrates by using nano-manipulated metallic tips as metallic electrodes directly approached on the flake surface. We report detailed experimental investigation of transport properties and contact resistance in back-gated field effect transistor in which the Si substrate is used as the gate electrode. Moreover, profiting of the n-type conduction, as well as the high aspect ratio at the edge of the MoS2 flakes, we also explored the possibility of exploiting the material as a field emitter. Indeed, by retracting one of the metallic probes (the anode) from the sample surface, it has been possible to switch on a field-emitted current by applying a relatively low external electric field of few-tens of Volts for a cathode-anode separation distance below 1 µm. Experimental data are then analyzed in the framework of Fowler-Nordheim theory and its extension to the two-dimensional limit.

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19

Djamgoz, Mustafa B. A., Maria Mycielska, Zbigniew Madeja, Scott P. Fraser, and Wlodzimierz Korohoda. "Directional movement of rat prostate cancer cells in direct-current electric field." Journal of Cell Science 114, no. 14 (2001): 2697–705. http://dx.doi.org/10.1242/jcs.114.14.2697.

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A two-part hypothesis has been tested, which proposes that (1) prostate cancer cells are galvanotactic (i.e. respond to an electric field by moving directionally) and (2) voltagegated Na+ channel activity, which was shown previously to be expressed specifically by strongly metastatic cells, controls galvanotaxis. Two well-defined rat (`Dunning') cell lines, originally derived from the same prostate tumour but differing markedly in their metastatic ability, were used. Cells were exposed to exogenous direct-current electric fields of physiological strength (0.1-4.0 V cm-1), their reactions were recorded by light microscopy and analysed by a quantitative tracking method. Voltage-gated Na+ channel activity was modulated pharmacologically using a range of concentrations of a specific channel blocker (tetrodotoxin) or an opener (veratridine). The results showed that the highly metastatic MAT-LyLu cells responded to the application of the electric field strongly by migrating towards the cathode. By contrast, the weakly metastatic At-2 cells gave no such response. Tetrodotoxin suppressed the galvanotactic response of the MAT-LyLu cells whereas veratridine enhanced it. Both compounds had little effect on the AT-2 cells. These results are consistent with functional voltage-gated Na+ channel expression occurring specifically in highly metastatic cells. This is also the first demonstration of control of galvanotaxis, in any cell type, by voltage-gated Na+ channel activity. The possible underlying mechanisms and the in vivo relevance of these findings are discussed.

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20

Sun, Youlei, Ying Wang, Jianxiang Tang, Wenju Wang, Yifei Huang, and Xiaofei Kuang. "A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer." Micromachines 10, no. 2 (2019): 91. http://dx.doi.org/10.3390/mi10020091.

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In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.

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21

Guillorn, M. A., M. L. Simpson, G. J. Bordonaro, V. I. Merkulov, L. R. Baylor, and D. H. Lowndes. "Fabrication of gated cathode structures using an in situ grown vertically aligned carbon nanofiber as a field emission element." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 2 (2001): 573. http://dx.doi.org/10.1116/1.1358855.

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22

Di Bartolomeo, Antonio, Aniello Pelella, Alessandro Grillo, Francesca Urban, and Filippo Giubileo. "Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides." Applied Sciences 10, no. 17 (2020): 5840. http://dx.doi.org/10.3390/app10175840.

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In this study, we investigate the electrical transport properties of back-gated field-effect transistors in which the channel is realized with two-dimensional transition metal dichalcogenide nanosheets, namely palladium diselenide (PdSe2) and molybdenum disulfide (MoS2). The effects of the environment (pressure, gas type, electron beam irradiation) on the electrical properties are the subject of an intense experimental study that evidences how PdSe2-based devices can be reversibly tuned from a predominantly n-type conduction (under high vacuum) to a p-type conduction (at atmospheric pressure) by simply modifying the pressure. Similarly, we report that, in MoS2-based devices, the transport properties are affected by pressure and gas type. In particular, the observed hysteresis in the transfer characteristics is explained in terms of gas absorption on the MoS2 surface due to the presence of a large number of defects. Moreover, we demonstrate the monotonic (increasing) dependence of the width of the hysteresis on decreasing the gas adsorption energy. We also report the effects of electron beam irradiation on the transport properties of two-dimensional field-effect transistors, showing that low fluences of the order of few e-/nm2 are sufficient to cause appreciable modifications to the transport characteristics. Finally, we profit from our experimental setup, realized inside a scanning electron microscope and equipped with piezo-driven nanoprobes, to perform a field emission characterization of PdSe2 and MoS2 nanosheets at cathode–anode separation distances as small as 200 nm.

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23

Sundaresan, Siddarth, and Ranbir Singh. "Comparison of Turn-Off Strategies for SiC Thyristors." Materials Science Forum 821-823 (June 2015): 889–92. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.889.

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Three different turn-off strategies are presented for 6.5 kV class SiC Thyristors. A cathode current of 62 A (284 A/cm2) is successfully turned off by applying a reverse bias of ≈ 30 V to the cathode of a SiC Thyristor. The minimum turn-off time (tq) for the Thyristor using this forced commutation technique is investigated as a function of cathode current density, reverse gate current and the dV/dt of the re-applied forward (blocking) bias. The Anode Switched Thyristor (AST) turn-off mode is demonstrated at a maximum cathode voltage of 3600 V and 14.5 A (199 A/cm2) of cathode current. A cathode current of 5.5 A (75 A/cm2) is successfully turned off by the gate turn off (GTO) or hard turn-off mode at different temperatures up to 200°C. The high-level lifetime (tHL) in the thick p-layer is extracted from the hard turn-off waveforms.

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24

Barth, C. J., and F. T. M. Koenen. "Gated photomultipliers with GaAs cathodes for a Thomson-scattering diagnostic: gate circuit and calibration method." Journal of Physics E: Scientific Instruments 22, no. 3 (1989): 178–80. http://dx.doi.org/10.1088/0022-3735/22/3/010.

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25

Li, Yu Kui, and Yun Peng Liu. "Characteristics of a Triode Field Emission Display Panel with the Suspension Gate Structure." Materials Science Forum 663-665 (November 2010): 203–6. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.203.

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With the effective screen-printing technique and high-temperature sintering process, the suspersion gate structure was developed. The silver slurry was printed on the gate substrate to form the gate electrode. Using carbon nanotube as cold field emitter, the triode field emission display (FED) panel was fabricated, and the detailed manufacture process was also presented. The anode back plane, the cathode back plane and spacer combined to device room, in which the suspension gate structure would be included. The distance between the gate electrode and carbon nanotube cathode could be reduced, which could decrease the device manufacture cost because of the small gate voltage. The modulation of emitted electron by the gate voltage would be confirmed, and the field emission characteristics was measured. The sealed FED panel with simple fabrication process and designed structure possessed better field emission uniformity, high display brightness and field emission perofrmance.

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26

Tian, Yuheng, Kuang-Hsu Wu, Liuyue Cao, Wibawa H. Saputera, Rose Amal, and Da-Wei Wang. "Unlocking high-potential non-persistent radical chemistry for semi-aqueous redox batteries." Chemical Communications 55, no. 15 (2019): 2154–57. http://dx.doi.org/10.1039/c8cc09304k.

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27

Lei, Da, and Qi Qi Ge Menggen. "Field-Enhancement Factor of a Carbon Nanotube Cold Cathode Triode." Applied Mechanics and Materials 552 (June 2014): 257–62. http://dx.doi.org/10.4028/www.scientific.net/amm.552.257.

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To estimate the field-enhancement factor, the model system of floated sphere in triode configuration of the carbon nanotube was proposed, and the actual electric field and field-enhancement factor at the apex of carbon nanotube were calculated with the image charge method analytically. The field-enhancement factor given as β=3+ρ+W, where ρ is the aspect ratio of the carbon nanotube, and W is the function of geometrical parameters and the anode and gate voltages. The geometrical parameters affects the field-enhancement factor very much, such as the field-enhancement factor decreased rapidly with the increasing of top radius of carbon nanotube, gate-cathode distance and gate-hole size. The field-enhancement factor could be improved via concocting the gate-electrode.

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28

Li, Yu Kui, and Yun Peng Liu. "Fabrication of Small Triode-Type Cold-Cathode Field Emission Display with Staggered Gate-Electrode Layer." Materials Science Forum 663-665 (November 2010): 791–94. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.791.

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Carbon nanotube used as cold cathode, the triode FED with staggered gate-electrode layer structure was fabricated with the screen-printing technique and conventional sintering process. Using superior mica plate as gate substrate material, the silver slurry was prepared to form the staggered gate electrode. The insulation layer was also manufactured over the gate substrate surface. The design and fabrication of the staggered gate-electrode layer was described in detail. By means of glass frit, the whole panel structure was vacuum-sealed. With the fabricated staggered gate-electrode layer, the modulation of electron emission from CNT field emitter by the gate voltage was confirmed. The packaged tridoe FED possessed better field emission uniformity, good image display performance and high display image brightness.

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29

Li, Yu Kui, and Xiao Jun Li. "Study on the Triode FED Device with the Improved Insulator." Key Engineering Materials 428-429 (January 2010): 454–57. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.454.

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Carbon nanotubes used as field emitters, the field emission display with improved insulator was reported. The fabrication process of improved gate structure with the mica plate as insulator between gate-electrode and cathode was presented. The technical development in the design of the improved insulator was also given. The patterned silver slurry was used to form the gate electrode and the screen-printed insulation slurry was formed the gate cover layer. The sealed field emission display packaged by the vacuum-device process had been developed and demonstrated. The modulation of electron emission by the gate voltage was also confirmed. The whole flat display device possessed better field emission properties and high brightness.

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30

Agarwal, Anant K., Sumi Krishnaswami, Ben Damsky, et al. "A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules." Materials Science Forum 527-529 (October 2006): 1397–400. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1397.

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We report on the development of the first 1 cm x 1 cm SiC Thyristor chip capable of blocking 5 kV. This demonstrates the present quality of the SiC substrate and epitaxial material. A forward drop of 4.1 V at 100 A and 25°C has been measured. The turn-on delay is found to be a strong function of the gate current. At a gate current of 0.5 A, a turn-on delay of 250 ns is observed for an anode to cathode current of 200 A. The turn-on delay reduces to 72 ns for an IG = 1.5 A. The turn-on rise time is a strong function of the anode to cathode voltage, VAK. At VAK =230 V, the turn-on rise-time is 300 ns for IAK =200 A. The rise-time reduces to 26 ns for VAK = 500 V.

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31

Cook, Alexander B., Jonathan D. Yuen, and Anvar Zakhidov. "Electrochemically gated organic photovoltaic with tunable carbon nanotube cathodes." Applied Physics Letters 103, no. 16 (2013): 163301. http://dx.doi.org/10.1063/1.4826145.

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32

KAZIMIERCZUK, MARIAN K., and NANDAKUMAR THIRUNARAYAN. "DYNAMIC PERFORMANCE OF MCTs UNDER INDUCTIVE LOAD CONDITIONS." Journal of Circuits, Systems and Computers 04, no. 04 (1994): 471–85. http://dx.doi.org/10.1142/s0218126694000272.

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PMOS-controlled thyristors (PMCTs) were tested in a single-switch configuration under inductive-load hard-switching conditions. The transient current and voltage waveforms during the turn-on and turn-off transitions were observed for 50 A/1000 V devices. The experimental waveforms are given for the anode current, the inductor current, the anode-to-cathode voltage, and the gate-to-anode drive voltage. These waveforms were obtained for periodic gate drive voltage at 6.5 kHz. The test circuit was operated at power levels of up to 370 W. The measured turn-on time was 0.255 μs at an anode-to-cathode voltage of 270 V and the measured turn-off time was 1.6 μs at an anode current of 16 A. The measured storage time was 1 μs. The measured input capacitance of the MCT was 13.5 nF and the output capacitance was 66.7 nF. It was found that the input and output capacitances of PMCTs are approximately linear.

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33

KAZIMIERCZUK, MARIAN K., NANDAKUMAR THIRUNARAYAN, BICK T. NGUYEN, and JOSEPH A. WEIMER. "EXPERIMENTAL STATIC AND DYNAMIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS FOR RESISTIVE LOADS." Journal of Circuits, Systems and Computers 05, no. 03 (1995): 393–410. http://dx.doi.org/10.1142/s0218126695000242.

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Experimental results are given for a PMOS-controlled thyristor (PMCT). The static IA-VAK characteristics of a PMCT were measured using a programmable high power curve tracer for both forward and reverse anode-to-cathode voltage VAK at different temperatures. The characteristics are similar to the ID-VD characteristics of typical p-n junction diodes. The device has a low forward voltage drop at high-current levels, e.g. VF(AK) = 1.6 V at IA = 200 A . The dynamic behavior of the PMCT was measured in a single switch configuration under resistive loading. The transient waveforms of anode current iA, gate current iG, anode-to-cathode voltage vAK, and gate-to-anode drive voltage vGA were observed at turn-on and turn-off for power levels up to 5 kW. The measured turn-on time was 0.3 μs and the measured turn-off time was 2.2 μs. The switching power loss and the conduction power loss were 3 W and 18 W, respectively.

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34

Kuznetsov, A. V., O. N. Kuleshova, A. Yu Pronozin, O. V. Krivenko, and O. S. Zavyalova. "Effects of low frequency rectangular electric pulses on Trichoplax (Placozoa)." Marine Biological Journal 5, no. 2 (2020): 50–66. http://dx.doi.org/10.21072/mbj.2020.05.2.05.

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The effect of extremely low frequency electric and magnetic fields (ELF-EMF) on plants and animals including humans is quite a contentious issue. Little is known about ELF-EMF effect on hydrobionts, too. We studied the effect of square voltage waves of various amplitude, duration, and duty cycle, passed through seawater, on Trichoplax organisms as a possible test laboratory model. Three Placozoa strains, such as Trichoplax adhaerens (H1), Trichoplax sp. (H2), and Hoilungia hongkongensis (H13), were used in experiments. They were picked at the stationary growth phase. Arduino Uno electronics platform was used to generate a sequence of rectangular pulses of given duration and duty cycle with a frequency up to 2 kHz. Average voltage up to 500 mV was regulated by voltage divider circuit. Amlodipine, an inhibitor of calcium channel activity, was used to check the specificity of electrical pulse effect on voltage-gated calcium channels in Trichoplax. Experimental animals were investigated under a stereo microscope and stimulated by current-carrying electrodes placed close to a Trichoplax body. Variations in behavior and morphological characteristics of Trichoplax plate were studied. Stimulating and suppressing effects were identified. Experimental observations were recorded using photo and video techniques. Motion trajectories of individual animals were tracked. Increasing voltage pulses with fixed frequency of 20 Hz caused H2 haplotype individuals to leave “electrode zone” within several minutes at a voltage of 25 mV. They lost mobility in proportion to voltage rise and were paralyzed at a voltage of 500 mV. Therefore, a voltage of 50 mV was used in further experiments. An animal had more chance to move in various directions in experiments with two electrodes located on one side instead of both sides of Trichoplax. Direction of motion was used as a characteristic feature. Trichoplax were observed to migrate to areas with low density of electric field lines, which are far from electrodes or behind them. Animals from old culture were less sensitive to electrical stimulus. H2 strain was more reactive than H1 strain and especially than H13 strain; it demonstrated stronger physiological responses at frequencies of 2 Hz and 2 kHz with a voltage of 50 mV. Motion patterns and animal morphology depended on the duration of rectangular stimulation pulses, their number, amplitude, and frequency. Effects observed varied over a wide range: from direct or stochastic migration of animals to the anode or the cathode or away from it to their immobility, an increase of optical density around and in the middle of Trichoplax plate, and finally to Trichoplax folding and detach from the substrate. Additional experiments on Trichoplax sp. H2 with pulse duration of 35 ms and pulse delay of 1 ms to 10 s showed that the fraction of paralyzed animals increased up to 80 % with minimum delay. Nevertheless, in the presence of amlodipine with a concentration of 25 nM, almost all Trichoplax remained fast-moving for several minutes despite exposure to voltage waves. Experimental animals showed a total discoordination of motion and could not leave an “electrode trap”, when amlodipine with a concentration of 250 nM was used. Further, Trichoplax plate became rigid, which appeared in animal shape invariability during motion. Finally, amlodipine with a concentration of 50 μM caused a rapid folding of animal plate-like body into a pan in the ventral-dorsal direction and subsequent dissociation of Trichoplax plate into individual cells. In general, the electrical exposure applied demonstrated a cumulative but a reversible physiological effect, which, as expected, is associated with activity of voltage-gated calcium channels. Amlodipine at high concentration (50 μM) caused Trichoplax disintegration; at moderate concentration (250 nM), it disrupted the propagation of activation waves that led to discoordination of animal motion; at low concentration (25 nM), it prevented an electric shock.

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35

Li, Nan Nan, Shu Cai Pang, Fei Yan, et al. "Analysis of Effective Field Emitting Angle for Spindt Cathode." Key Engineering Materials 645-646 (May 2015): 1038–42. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.1038.

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Effective field emitting angle plays an important role when investigating field emission characters. In this work, effective field emitting angle is introduced for Spindt-type emitter to relate spatial variation of current density along tip’s surface to emission current. The effects of various parameters on effective field emitting angle are analyzed. The results show that effective field emitting angle decreases exponentially as half angle increases, decreases quadratically as radius of gate aperture increases, but increases logarithmically as gate voltage increases linearly. It is also found that effective field emitting angle increases first and then decreases with emitter’s height increasing. Similar trends can be also found with insulator height. Grid thickness nearly has no effect on the effective field emitting angle.

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Nakayama, Koji, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, and Hidekazu Tsuchida. "SiC Zener Diode for Gate Protection of 4.5 kV SiCGT." Materials Science Forum 679-680 (March 2011): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.559.

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Zener voltages of the fabricated SiC Zener diodes with various nitrogen concentrations in the range from 7×1017 to 5×1019 cm-3 are 17 to 87 V, and decreased with an increase in the nitrogen concentration. Furthermore, in a chopper circuit using SiC Zener diodes for SiCGT gate protection, the commutated current decreases slowly even though cathode current falls rapidly, and the SiCGT gate is protected from surge voltage by SiC Zener diode. Moreover, the value of Zener voltage after the operation was the same as that before half bridge operation at 47 V.

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37

Guillorn, M. A., A. V. Melechko, V. I. Merkulov, D. K. Hensley, M. L. Simpson, and D. H. Lowndes. "Self-aligned gated field emission devices using single carbon nanofiber cathodes." Applied Physics Letters 81, no. 19 (2002): 3660–62. http://dx.doi.org/10.1063/1.1517718.

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Zong, Xian Li, Rong Zhu, and Chao Zhang. "Electric-Field Assisted Hydrothermal Growth of ZnO Nanorods on Flexible Substrate and their Strain Sensing Applications." Applied Mechanics and Materials 748 (April 2015): 49–52. http://dx.doi.org/10.4028/www.scientific.net/amm.748.49.

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This paper presents an electric-field assisted hydrothermal seedless synthesis of ZnO nanorods (NRs) on flexible polyimide (PI) substrate and their strain sensing applications. A three-electrode structure including top cathode and anode on PI substrate with a Copper layer on the back of PI (served as bottom gate) was fabricated with photolithography, sputtering and lift-off techniques. Hydrothermal growth of ZnO NRs on and between top cathode and anode (comb-like electrode-pair) was realized in Zn (NO3)2 and HMTA solution whilst an alternating current (AC) electric-field was applied onto the electrodes. The strain sensing properties of the fabricated ZnO NRs device were tested by measuring I-V characteristics of the device under different strains. From strain-free to 0.48% strain, the decrease ratio of the current flowing through the device reached 75% at a bias voltage of 1V.

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39

Iemmo, Laura, Francesca Urban, Filippo Giubileo, Maurizio Passacantando, and Antonio Di Bartolomeo. "Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS2 Flakes." Nanomaterials 10, no. 1 (2020): 106. http://dx.doi.org/10.3390/nano10010106.

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We report a facile approach based on piezoelectric-driven nanotips inside a scanning electron microscope to contact and electrically characterize ultrathin MoS2 (molybdenum disulfide) flakes on a SiO2/Si (silicon dioxide/silicon) substrate. We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS2, used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. We observe that the conduction of the MoS2 channel is affected by trap states. Moreover, we report a gate-controlled field emission current from the edge part of the MoS2 flake, evidencing a field enhancement factor of approximately 200 and a turn-on field of approximately 40 V / μ m at a cathode–anode separation distance of 900 nm .

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40

Lee, Byeong-Hoon, Chong-Man Yun, Dae-Seok Byeon, Min-Koo Han, and Yearn-Ik Choi. "A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with thep+Cathode Well." Japanese Journal of Applied Physics 34, Part 1, No. 2B (1995): 854–59. http://dx.doi.org/10.1143/jjap.34.854.

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Zhao Xinghai, 赵兴海, 施志贵 Shi Zhigui, 向伟 Xiang Wei, et al. "Fabrication of micro-hole array for field emission cold cathode gates." High Power Laser and Particle Beams 25, no. 6 (2013): 1475–78. http://dx.doi.org/10.3788/hplpb20132506.1475.

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42

Bernhardt, A. F., R. J. Contolini, A. F. Jankowski, et al. "Arrays of field emission cathode structures with sub-300 nm gates." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 3 (2000): 1212. http://dx.doi.org/10.1116/1.591363.

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43

Guillorn, M. A., M. D. Hale, V. I. Merkulov, et al. "Integrally gated carbon nanotube field emission cathodes produced by standard microfabrication techniques." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 3 (2003): 957. http://dx.doi.org/10.1116/1.1565343.

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44

Jung, Hyuck, Duck-Jin Lee, Hyun-Tae Chun, Nam-Je Koh, Young Rae Cho, and Dong-Gu Lee. "Carbon Nanotube Field Emitters for Display Applications Using Screen Printing." Materials Science Forum 475-479 (January 2005): 1889–92. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1889.

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In this study, a 10"-sized panel with novel tetrode structure was tried to prevent broadening of electrons emitted from CNTs. The structure of the novel tetrode is composed of CNT emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top of a hopping electron spacer (HES), and an anode. HES contains funnel-shaped holes whose inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes and hop along the hole surface to the top extracting electrode. The effects of HES on emission characteristics of field emission display (FED) were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the FED panel as a post-treatment

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45

Jian-Feng, Dai, Mu Xiao-Wen, Qiao Xian-Wu, Chen Xiao-Xing, and Wang Jun-Hong. "Field emission of carbon nanotube array with normal-gate cold cathode." Chinese Physics B 19, no. 5 (2010): 057201. http://dx.doi.org/10.1088/1674-1056/19/5/057201.

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46

Sankara Narayanan, E. M., G. A. J. Amaratunga, and W. I. Milne. "CMOS compatible shorted anode auxiliary cathode lateral insulated gate bipolar transistors." IEEE Transactions on Electron Devices 40, no. 10 (1993): 1880–83. http://dx.doi.org/10.1109/16.277351.

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47

Knápek, Alexandr, Tomáš Radlička, and Stanislav Krátký. "Simulation and Optimization of a Carbon Nanotube Electron Source." Microscopy and Microanalysis 21, S4 (2015): 60–65. http://dx.doi.org/10.1017/s1431927615013148.

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AbstractThis paper deals with an optimization of a field-emission structure concept based on vertically aligned carbon nanotubes (CNT). A design concept for a fabrication method for a gate structure based on electron beam lithography is reviewed in the first part of the paper. A single carbon nanotube is grown by the PECVD method inside the gate structure. Calculations and simulations that help determine gate structure proportions in order to obtain the best possible electron reduced brightness and to predict the cathode's electric behavior are also essential parts of this study.

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Krainyukov, Alexander, and Valery Kutev. "Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation." Transport and Telecommunication Journal 16, no. 3 (2015): 217–23. http://dx.doi.org/10.1515/ttj-2015-0020.

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Abstract The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.

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Higashi, Yusuke, Riichiro Takaishi, Koichi Kato, et al. "Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface." Microelectronics Reliability 70 (March 2017): 12–21. http://dx.doi.org/10.1016/j.microrel.2017.01.011.

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Yokoo, Kuniyoshi. "Energy distribution of tunneling emission from Si-gate metal–oxide–semiconductor cathode." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 2 (1994): 801. http://dx.doi.org/10.1116/1.587350.

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