Relevant bibliographies by topics / Germanium Effect of temperature on

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Germanium Effect of temperature on'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Germanium Effect of temperature on"

1

Ehrman, Sheryl H., Maria I. Aquino-Class, and Michael R. Zachariah. "Effect of Temperature and Vapor-phase Encapsulation on Particle Growth and Morphology." Journal of Materials Research 14, no. 4 (1999): 1664–71. http://dx.doi.org/10.1557/jmr.1999.0224.

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The effect of in situ vapor phase salt-encapsulation on particle size and morphology was systematically investigated in a sodium co-flow/furnace reactor. The temperature of the furnace was varied, and the primary particle size and degree of agglomeration of the resulting silicon and germanium particles were determined from transmission electron micrograph images of particles sampled in situ. Particle size increased with increasing temperature, a trend expected from our understanding of particle formation in a high-temperature process in the absence of an encapsulant. Germanium, which coalesces
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Grillo, Alessandro, Enver Faella, Filippo Giubileo, Aniello Pelella, Francesca Urban, and Antonio Di Bartolomeo. "Temperature Dependence of Germanium Arsenide Field-Effect Transistors Electrical Properties." Materials Proceedings 4, no. 1 (2020): 26. http://dx.doi.org/10.3390/iocn2020-07810.

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In this work, we report the fabrication of germanium arsenide () field-effect transistors with ultrathin channel and their electrical characterizations in a wide temperature range, from to . We show that at lower temperatures, the electrical conduction of the channel is dominated by the 3D variable range hopping but becomes band-type at higher temperatures, after the formation of a highly conducting two-dimensional (2D) channel. The presence of this 2D channel, limited to a few interfacial layers, is confirmed by the observation of an unexpected peak in the temperature dependence of the carrie
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Yan, Chaoyi, Mei Yin Chan, Tao Zhang, and Pooi See Lee. "Catalytic Growth of Germanium Oxide Nanowires, Nanotubes, and Germanium Nanowires: Temperature-Dependent Effect." Journal of Physical Chemistry C 113, no. 5 (2009): 1705–8. http://dx.doi.org/10.1021/jp8080386.

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Lizunova, Anna, Anastasia Mazharenko, Bulat Masnaviev, et al. "Effects of Temperature on the Morphology and Optical Properties of Spark Discharge Germanium Nanoparticles." Materials 13, no. 19 (2020): 4431. http://dx.doi.org/10.3390/ma13194431.

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We report the spark discharge synthesis of aerosol germanium nanoparticles followed by sintering in a tube furnace at different temperatures varying from 25 to 800 °C. The size, structure, chemical composition and optical properties were studied. We have demonstrated a melting mechanism of nanoparticles agglomerates, the growth of the mean primary particle size from 7 to 51 nm and the reduction of the size of agglomerates with a temperature increase. According to transmission electron microscopy (TEM) and Fourier transform infrared (FTIR) data, primary nanoparticles sintered at temperatures fr
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Johnson, G. W., and D. E. Brodie. "The effects of electron bombardment on vacuum-deposited amorphous germanium films." Canadian Journal of Physics 69, no. 5 (1991): 621–26. http://dx.doi.org/10.1139/p91-105.

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Low-energy electron irradiation was used to inhibit crystallite nucleation in a range of substrate temperatures (473–513 K) where crystallite formation would normally be observed. The properties of the amorphous phase obtained closely match the published results for high-temperature annealed (up to 723 K) amorphous germanium films in the precrystallization regime rather than those for amorphous germanium films obtained by annealing them to 513 K. It is shown that the properties of annealed amorphous germanium films are independent of a range of deposition conditions when pure (water free) film
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Šerák, Jan, Tomáš Kovalčík, Dalibor Vojtěch, and Pavel Novák. "The Influence of Ge on the Properties of Mg Alloys." Key Engineering Materials 647 (May 2015): 72–78. http://dx.doi.org/10.4028/www.scientific.net/kem.647.72.

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Germanium is an element which is used in metallurgy in a very small extent. Much more significant is its use as a semiconductor material. Most of magnesium alloys are usually used for applications at ambient temperature. The significant decrease in mechanical properties is observed already at the temperature higher than 150°C. This is the reason for the effort to prepare a new low-priced magnesium based alloys with improved mechanical properties at elevated temperatures, e.g. for components of combustion engines. Therefore, new unconventional alloying elements are studied for increase the ther
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Yang, C. C., and Qing Jiang. "Effect of Pressure on Melting Temperature of Silicon and Germanium." Materials Science Forum 475-479 (January 2005): 1893–96. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1893.

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The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.
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Chen, Hui, Wei Yu Chen, Yun Fei Chen, and Ke Dong Bi. "Out-of-Plane Thermal Conductivity of Silicon Thin Film Doped with Germanium." Advanced Materials Research 1082 (December 2014): 459–62. http://dx.doi.org/10.4028/www.scientific.net/amr.1082.459.

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The out-of-plane thermal conductivity of silicon thin film doped with germanium is calculated by non-equilibrium molecular dynamics simulation using the Stillinger-Weber potential model. The silicon thin film is doped with germanium atoms in a random doping pattern with a doping density of 5% and 50% respectively. The effect of silicon thin film thickness on its thermal conductivity is investigated. The simulated thicknesses of silicon thin film doped with germanium range from 2.2 to 10.9 nm at an average temperature 300K. The simulation results indicate that the out-of-plane thermal conductiv
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Mamand, S. M., and M. S. Omar. "Effect of Parameters on Lattice Thermal Conductivity in Germanium Nanowires." Advanced Materials Research 832 (November 2013): 33–38. http://dx.doi.org/10.4028/www.scientific.net/amr.832.33.

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Modified Callaway's theory was used to calculate lattice thermal conductivity (LTC) of Germanium nanowires. Results are compared to those of experimental values of the temperature dependence of LTC for nanowire diameters of 62, 19, and 15nm. In this calculation, both longitudinal and transverse modes are taken into account. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Effect of parameters, phonon confinement and imperfections in limiting thermal conductivity for the nanowires unde
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Luniov, S. V., P. F. Nazarchuk, and O. V. Burban. "Electrical properties of strained germanium nanofilm." Physics and Chemistry of Solid State 22, no. 2 (2021): 313–20. http://dx.doi.org/10.15330/pcss.22.2.313-320.

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Dependences of the concentration of intrinsic current carriers, electron and hole mobilities and specific conductivity for strained germanium nanofilms grown on the Si, Ge(0,64)Si(0,36) and Ge(0,9)Si(0,1) substrates with crystallographic orientation (001), on their thickness at different temperatures were calculated on the basis of the statistics of non-degenerate two-dimensional electron and hole gas in semiconductors. The electrical properties of such nanofilms are determined by the peculiarities of their band structure. It is established that the effects of dimensional quantization, the pro
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Dissertations / Theses on the topic "Germanium Effect of temperature on"

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Ahmed, Adnan. "Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7227.

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This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors
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Thomas, Dylan Buxton. "Silicon-germanium devices and circuits for high temperature applications." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33949.

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Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of SiGe technology for cryogenic and radiation-intense environments is well known, yet SiGe has been generally overlooked for applications involving extreme high temperature operation. This work is an investigation into the potential capabilities of SiGe technology for operation up to 300°C, including the development of packaging and testing procedures to enable the necessary measur
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Diestelhorst, Ryan M. "Silicon-germanium BiCMOS device and circuit design for extreme environment applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28180.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen.
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Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. An
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Lourenco, Nelson Estacio. "An assessment of silicon-germanium BiCMOS technologies for extreme environment applications." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45959.

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This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications.
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Sadeghzadeh, Mohammad Ali. "Electrical properties of Si/Si←1←-←xGe←x/Si inverted modulation doped structures." Thesis, University of Warwick, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343950.

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Ansaripour, Ghassem. "Hot carriers and high field effects in SiGe heterostructures." Thesis, University of Warwick, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343250.

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Wilcox, Edward. "Silicon-germanium devices and circuits for cryogenic and high-radiation space environments." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33850.

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This work represents several years' research into the field of radiation hardening by design. The unique characteristics of a SiGe HBT, described in Chapter 1, make it ideally suitable for use in extreme environment applications. Chapter 2 describes the total ionizing dose effects experienced by a SiGe HBT, particularly those experienced on an Earth-orbital or lunar-surface mission. In addition, the effects of total dose are evaluated on passive devices. As opposed to the TID-hardness of SiGe transistors, a clear vulnerability to single-event effects does exist. This field is divided into
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Diver, Andrew James. "The strongly correlated electron systems CeNi←2Ge←2 and Sr←2RuO←4." Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364543.

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Najafizadeh, Laleh. "Design of analog circuits for extreme environment applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31796.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Shen, Shyh-Chiang; Committee Member: Steffes, Paul; Committee Member: Zhou, Hao Min. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Books on the topic "Germanium Effect of temperature on"

1

Harań, Grzegorz. Impurity effect in high temperature superconductors. Oficyna Wydawnicza Politechniki Wrocławskiej, 2001.

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Lansdown, A. R. High temperature lubrication. Mechanical Engineering Publications, 1994.

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Lufitha, Mundel. Effect of substrate temperature on coating adhesion. National Library of Canada, 2001.

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Franklin, Keara A., and Philip A. Wigge. Temperature and plant development. Wiley Blackwell, 2014.

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High temperature corrosion. Elsevier Applied Science, 1988.

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Gat, Z. The Effect of temperature on the citrus crop. Secretariat of the World Meteorological Organization, 1997.

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DeHayes, D. H. Critical temperature: A quantitative method of assessing cold tolerance. U.S. Dept. of Agriculture, Forest Service, Northeastern Forest Experiment Station, 1989.

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DeHayes, D. H. Critical temperature: A quantitative method of assessing cold tolerance. U.S. Dept. of Agriculture, Forest Service, Northeastern Forest Experiment Station, 1989.

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Khanna, Anand S. High temperature corrosion. World Scientific, 2016.

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Zaslavskiĭ, V. A. Insect development: Photoperiodic and temperature control. Edited by Veerman A. Springer-Verlag, 1988.

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Book chapters on the topic "Germanium Effect of temperature on"

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Yang, C. C., and Qing Jiang. "Effect of Pressure on Melting Temperature of Silicon and Germanium." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.1893.

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2

Feldmann, T., S. Nosrati, and F. Bélanger. "Solubility of Germanium Dioxide in Commonly Used Acids—Effect of Acid Strength, Temperature, and Water Activity." In The Minerals, Metals & Materials Series. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95022-8_209.

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Wagner, R. E., and A. Mandelis. "Photomodulated Optical-Reflectance Studies of Germanium: Diagnostic Separation of Temperature and Free-Carrier Effects." In Photoacoustic and Photothermal Phenomena III. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-540-47269-8_96.

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Chaudhry, Amit. "Germanium Technology." In Fundamentals of Nanoscaled Field Effect Transistors. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-6822-6_5.

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Marques, Severino P. C., and Guillermo J. Creus. "Temperature Effect." In Computational Viscoelasticity. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-25311-9_6.

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Alderliesten, René. "Effect of Temperature." In Fatigue and Fracture of Fibre Metal Laminates. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56227-8_11.

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Brown, R. P. "Effect of temperature." In Physical Testing of Rubber. Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-011-0529-3_15.

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Brown, Roger. "Effect of Temperature." In Physical Test Methods for Elastomers. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-66727-0_21.

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Ferrell, Richard A. "The Josephson Effect." In High Temperature Superconductivity. Springer New York, 1990. http://dx.doi.org/10.1007/978-1-4612-3222-3_3.

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Cressler, John D. "Silicon-Germanium Heterojunction Bipolar Transistor." In Device and Circuit Cryogenic Operation for Low Temperature Electronics. Springer US, 2001. http://dx.doi.org/10.1007/978-1-4757-3318-1_4.

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Conference papers on the topic "Germanium Effect of temperature on"

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Rickenbach, Robert, and Paul Wendland. "Germanium Photodiodes - Temperature And Uniformity Effects." In 29th Annual Technical Symposium, edited by Robert L. Galawa. SPIE, 1985. http://dx.doi.org/10.1117/12.949608.

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Ghosh, Sayani, Kalyan Koley, and Chandan K. Sarkar. "Effect of temperature variability on RF performance of Germanium pTFET." In 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS). IEEE, 2016. http://dx.doi.org/10.1109/icdcsyst.2016.7570593.

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Wei, Erh-Jye, Bing-Yue Tsui, and Pin-Jiun Wu. "Effect of formation temperature on quality of gate dielectric on germanium substrate." In 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2016. http://dx.doi.org/10.1109/ipfa.2016.7564294.

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Wang, Peng, and Avram Bar-Cohen. "Thermoelectric Self-Cooling on Germanium Chip." In 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-23312.

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Growing interest in germanium solid-state devices is raising concern over the effects of on-chip, micro-scaled, high flux hot spot on the reliability and performance of germanium chips. Current thermal management technology offers few choices for such on-chip hot spot remediation. However, the good thermo-electric properties of single crystal germanium support the development of a novel thermal management approach, relying on thermoelectric self-cooling by an electric current flowing in a thin planar layer on the back of the germanium chip. Use of metal-on-germanium fabrication techniques can
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Liu, Fang, Jiaobo Gao, Chongmin Yang, et al. "Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters." In International Symposium on Optoelectronic Technology and Application 2016. SPIE, 2016. http://dx.doi.org/10.1117/12.2248328.

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Jadhav, Priyanka P., T. D. Dongale, and R. S. Vhatkar. "Effect of temperature on thermal conductivity of silicon germanium square nanowire using nonequilibrium molecular dynamics simulation." In PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5130248.

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Liu, Bin, Phyllis Shi Ya Lim, and Yee-Chia Yeo. "Effect of strain on Negative Bias Temperature Instability of Germanium p-channel Field-Effect Transistor with high-к gate dielectric." In 2010 IEEE International Reliability Physics Symposium. IEEE, 2010. http://dx.doi.org/10.1109/irps.2010.5488674.

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Redcay, Christopher J., and Ongi Englander. "Germanium Nanowire Synthesis via Localized Heating and a Comparison to Bulk Processes." In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-37976.

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In this work, we compare the localized synthesis of germanium nanowires (GeNWs) to germanium nanowires synthesized under a globally high temperature environment. The localized synthesis of germanium nanowires is presented for the first time using the resistive heating of MEMS microbridges. The results of the localized synthesis process are then compared with the results of well-established high temperature synthesis processes for germanium nanowires. The effect of heat source and local temperature gradients on the resulting nanowires is assessed. The results suggest that optimal nanowire synth
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Patel, Ghanshyam R., and Tushar C. Pandya. "Effect of particle size, shape and temperature on the volume thermal expansion and bulk modulus of nanocrystalline germanium." In DAE SOLID STATE PHYSICS SYMPOSIUM 2017. Author(s), 2018. http://dx.doi.org/10.1063/1.5028692.

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Wicaksono, Satrio, Kian Hua Tan, Wan Khai Loke, et al. "Growth temperature effects on graded InxAl1−xAs/GaAs buffer for metamorphic In0.70Ga0.30As/In0.53Al0.47As planar transistor on Ge-on-insulator(GeOI) substrate." In 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874626.

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Reports on the topic "Germanium Effect of temperature on"

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Itoh, Kohei. Low temperature carrier transport properties in isotopically controlled germanium. Office of Scientific and Technical Information (OSTI), 1994. http://dx.doi.org/10.2172/29414.

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Kolodzey, James. Heterostructure Field Effect Transistors Fabricated from Germanium-Alloyed Silicon Carbide. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada393089.

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Kim, Sung H. Germanium-Source Tunnel Field Effect Transistors for Ultra-Low Power Digital Logic. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada561720.

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Chamberlin, Danielle Russell. Effect of uniaxial stress on gallium, beryllium, and copper-doped germanium hole population inversion lasers. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/674711.

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Sawatzky, H., I. Clelland, and J. Houde. Effect of topping temperature on Cold Lake asphalt's susceptibility to temperature. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1991. http://dx.doi.org/10.4095/304486.

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Cheng, Juei-Teng, and Lowell E. Wenger. Josephson Effect Research in High-Temperature Superconductors. Defense Technical Information Center, 1988. http://dx.doi.org/10.21236/ada201483.

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Korinko, P. EFFECT OF FILTER TEMPERATURE ON TRAPPING ZINC VAPOR. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1025512.

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Sun, W. D., Fred H. Pollak, Patrick A. Folkes, and Godfrey A. Gumbs. Band-Bending Effect of Low-Temperature GaAs on a Pseudomorphic Modulation-Doped Field-Effect Transistor. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada361412.

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Rowe, D. M. Experimental Investigation into the Effect of Long Term Thermal Anneals on the Thermoelectric Properties of Silicon Germanium-Gallium Phosphide. Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada240806.

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Price, J. T., J. F. Gransden, M. A. Khan, and B. D. Ryan. Effect of selected minerals on high temperature properties of coke. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1992. http://dx.doi.org/10.4095/304533.

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