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Dissertations / Theses on the topic 'Germanium Effect of temperature on'

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Published: 4 June 2021

Last updated: 1 February 2022

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1

Ahmed, Adnan. "Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7227.

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This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors

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2

Thomas, Dylan Buxton. "Silicon-germanium devices and circuits for high temperature applications." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33949.

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Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of SiGe technology for cryogenic and radiation-intense environments is well known, yet SiGe has been generally overlooked for applications involving extreme high temperature operation. This work is an investigation into the potential capabilities of SiGe technology for operation up to 300°C, including the development of packaging and testing procedures to enable the necessary measur

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3

Diestelhorst, Ryan M. "Silicon-germanium BiCMOS device and circuit design for extreme environment applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28180.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen.

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4

Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. An

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5

Lourenco, Nelson Estacio. "An assessment of silicon-germanium BiCMOS technologies for extreme environment applications." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45959.

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This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications.

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6

Sadeghzadeh, Mohammad Ali. "Electrical properties of Si/Siâ†1â†-â†xGeâ†x/Si inverted modulation doped structures." Thesis, University of Warwick, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343950.

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7

Ansaripour, Ghassem. "Hot carriers and high field effects in SiGe heterostructures." Thesis, University of Warwick, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343250.

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8

Wilcox, Edward. "Silicon-germanium devices and circuits for cryogenic and high-radiation space environments." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33850.

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This work represents several years' research into the field of radiation hardening by design. The unique characteristics of a SiGe HBT, described in Chapter 1, make it ideally suitable for use in extreme environment applications. Chapter 2 describes the total ionizing dose effects experienced by a SiGe HBT, particularly those experienced on an Earth-orbital or lunar-surface mission. In addition, the effects of total dose are evaluated on passive devices. As opposed to the TID-hardness of SiGe transistors, a clear vulnerability to single-event effects does exist. This field is divided into

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9

Diver, Andrew James. "The strongly correlated electron systems CeNiâ†2Geâ†2 and Srâ†2RuOâ†4." Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364543.

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10

Najafizadeh, Laleh. "Design of analog circuits for extreme environment applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31796.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Shen, Shyh-Chiang; Committee Member: Steffes, Paul; Committee Member: Zhou, Hao Min. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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11

Sabbah, Wissam. "Contribution à l’étude des assemblages et connexions nécessaires à la réalisation d’un module de puissance haute température à base de jfet en carbure de silicium (SiC)." Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR12013/document.

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Le développement de composants de puissance à base de carbure de silicium (SiC) permet la réalisation d’interrupteurs pouvant fonctionner au-delà de 200°C. Le silicium présente plus de limitations au niveau physique du matériau qu’au niveau des technologies d’assemblages. Le SiC est un matériau semi-conducteur grand gap ce qui permet d’obtenir des courants de fuite inverse qui restent faibles à haute température ; d’où un fort intérêt pour des applications haute température. Mise à part son utilisation à des températures pouvant dépasser les 300°C, c’est un matériau qui permet aussi d’augmente

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12

Jongthammanurak, Samerkhae. "Germanium-rich silicon-germanium materials for field-effect modular application." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44314.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2008.<br>Includes bibliographical references (p. 107-111).<br>The development of electric-field-induced optical modulation in the materials capable of monolithically integrated on silicon (Si) substrates offer the possibility of high-speed modulation in a pico second timeframe as well as low power consumption, key requirements for integrated modulator applications. This thesis presents a study of the Franz-Keldysh effect in germanium (Ge) layers epitaxially grown on Si substrates, by using free-

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13

Hwang, Sung-bo. "Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition /." Full text (PDF) from UMI/Dissertation Abstracts International, 2002. http://wwwlib.umi.com/cr/utexas/fullcit?p3081093.

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14

Dingha, Beatrice Nuck Appel Arthur G. "Effects of toxicants, temperature, and resistance on metabolism and gas exchange patterns of the beet armyworm, Spodoptera exigua (Hübner), and the german cockroach, Blattella germanica (Linnaeus)." Auburn, Ala., 2005. http://repo.lib.auburn.edu/2005%20Summer/doctoral/DINGHA_BEATRICE_16.pdf.

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15

Tu, Ryan H. "Germanium nanowire controlled synthesis, alignment, and field-effect-transistor characteristics /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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16

Park, Jin Hong. "Physics and technology of low temperature germanium MOSFETs for monolithic three dimensional integrated circuits /." May be available electronically:, 2009. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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17

Li, Sonia Mary Seiwei. "Alternative approaches to silicon germanium modulation doped field effect transistor processing." Thesis, Imperial College London, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.408012.

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18

Morasse, Rick Albert Lionel. "Low-Temperature Solution-Phase Synthesis of Chalcogenide and Carbide Materials." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1513253677021066.

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19

Horrell, Adrian Ifor. "A theoretical study of the hole mobility in silicon-germanium heterostructures." Thesis, Loughborough University, 2001. https://dspace.lboro.ac.uk/2134/34855.

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The incorporation of Si1-xGex alloy heterostructures into conventional Si processes has been proposed as a means of improving the operating frequency and overall performance of Si field effect transistors. One parameter expected to benefit from this approach is the hole mobility, which would have important implications for high speed CMOS applications. Measured values of the hole mobility, however, have failed to live up to early expectations, and much ongoing research is directed at understanding whether this is an intrinsic limitation (e.g. due to alloy disorder scattering), or due to imperf

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20

Krishnamohan, Tejas. "Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETs." access full-text online access from Digital Dissertation Consortium, 2006. http://libweb.cityu.edu.hk/cgi-bin/er/db/ddcdiss.pl?3219310.

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21

Marsh, M. G. "The effect of a temperature gradient on high temperature fretting wear." Thesis, University of Nottingham, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267625.

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22

Olsen, Sarah H. "Strained silicon/silicon germanium heterojunction n-chanel metal oxide semiconductor field effect transistors." Thesis, University of Newcastle Upon Tyne, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246619.

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23

Xuan, Guangchi. "The fabrication and characterization of high temperature Terahertz emitters, and DNA-sensitive transistors based on silicon-germanium and silicon carbide materials." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 138 p, 2008. http://proquest.umi.com/pqdweb?did=1459914001&sid=11&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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24

Sutton, Akil K. "Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7217.

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A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behin the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section of Chapter I. This is followed by a discussion of the strained layer Si/SiGe material structure and relevant fabrication techniques used in the development of the first generation of this technology. A comprehensive description of the device performance is presented. Chapter II presents an overview

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25

Zhu, Chendong. "The mixed-mode reliability stress of Silicon-Germanium heterojunction bipolar transistors." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14647.

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The objective of the dissertation is to combine the recent Mixed-Mode reliability stress studies into a single text. The thesis starts with a review of silicon-germanium heterojunction bipolar transistor fundamentals, development trends, and the conventional reliability stress paths used in industry, after which the new stress path, Mixed-Mode stress, is introduced. Chapter 2 is devoted to an in-depth discussion of damage mechanisms that includes the impact ionization effct and the selfheating effect. Chapter 3 goes onto the impact ionization effect using two-dimensional calibrated MEDICI simu

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26

Lufitha, Mundel. "Effect of substrate temperature on coating adhesion." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ58842.pdf.

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27

Phillips, Lisa Elaine. "The effect of low temperature on Salmonella." Thesis, University of Exeter, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286534.

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28

Mitchell, Angela. "The effect of temperature on starch synthesis." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.243060.

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29

Sun, Shan. "Power metal-oxide-semiconductor field-effect transistor with strained silicon and silicon germanium channel." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4631.

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With the development of modern electronics, the demand for high quality power supplies has become more urgent than ever. For power MOSFETs, maintaining the trend of reducing on-state resistance (conduction loss) without sacrificing switching performance is a severe challenge. In this work, our research is focused on implementing strained silicon and silicon germanium in power MOFETs to enhance carrier mobility, thus achieving the goal of reducing specific on-state resistance. We propose an N-channel super-lattice trench MOSFET, a P-channel sidewall channel trench MOSFET and P-Channel LDMOS wit

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30

Korndörfer, Falk. "Zum thermischen Widerstand von Silicium-Germanium-Hetero-Bipolartransistoren." Doctoral thesis, Universitätsbibliothek Chemnitz, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-150269.

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Der thermische Widerstand ist eine wichtige Kenngröße von Silicium-Germanium-Hetero-Bipolartransistoren (SiGe-HBTs). Bisher kam es bei der quantitativen Bestimmung der thermischen Widerstände von SiGe-HBTs zu deutlichen Abweichungen zwischen Simulation und Messung. Der Unterschied zwischen Simulation und Messung betrug bei den untersuchten HBTs mehr als 30 Prozent. Diese Arbeit widmet sich der Aufklärung und Beseitigung der möglichen Ursachen hierfür. Zu diesem Zweck werden als erstes die Messmethoden analysiert. Es zeigt sich, dass die bisher verwendete Extraktionsmethode sensitiv auf den Ear

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31

Prasad, Renee Priya. "The effect of rearing temperature on performance of Trichogramma sibericum at ambient temperature." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/MQ51451.pdf.

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32

Periwal, Priyanka. "VLS growth and characterization of axial Si-SiGe heterostructured nanowire for tunnel field effect transistors." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT045.

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L'augmentation des performances des circuits intégrés s'est effectué durant les trentes dernières années par la miniaturisation du composant clé à savoir le transistor MOSFET. Cette augmentation de la densité d'intégration se heurte aujourd'hui à plusieurs verrous, notamment celui de la puissance consommée qui devient colossale. Il devient alors nécessaire de travailler sur de nouveaux composants, les transistors à effet tunnel, où les porteurs sont injectés par effet tunnel bande à bande permettant de limiter considérablement la puissance consommée en statique. Les nanofils semiconducteurs so

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33

Castillo, Rodrigo. "Synthesis of silicon- and germanium-rich phases at high-pressure conditions." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-207708.

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The main focus of the present work was the Ge-rich part of the binary Ba – Ge system, in which by inspecting the behavior of the clathrate-I Ba8Ge43 under pressure, several new phases were found. The new phases in this system have the following compositions: BaGe3 (with two modifications), BaGe5, BaGe5.5 and BaGe6, therefore they are quite close in composition range: 75% - ~85% at. Ge. Concerning the conditions required for the synthesis of each phase, several combinations of temperature and pressure were employed in order to find a stability range. It was possible to establish such a formati

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34

Ruhge, Forrest. "EFFECT OF GERMANIUM DOPING ON ERBIUM SENSITIZATION IN THE ERBIUM DOPED SILICON RICH SILICA MATERIAL SYSTEM." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2933.

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The continued size reduction in electronic integrated circuits has lead to a demand for on-chip high-bandwidth and low loss communication channels. Optical interconnects are considered an essential addition to the silicon electronics platform. A major challenge in the field of integrated Si photonics is the development of cost effective silicon compatible light sources. This thesis investigates the sensitization of group IV doped silica films emitting at 1.535μm for applications as silicon compatible light sources. Thin erbium-doped silica films containing excess silicon and germanium wer

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35

Griškevičius, Mečislavas. "High Temperature Effect On Resistance Of Timber Structures." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2010. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101119_134602-29128.

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The present dissertation and its main subjects inquires into the pine and oak timber strength property changes-temperature relations. It also explores the behaviour of slender timber elements in axial compression at higher temperatures; and the comparative analysis of obtained results. The work seeks to accomplish the following major tasks: to obtain test data about the influence of high temperature on the properties of different natural – pine and oak – timber; to investigate the behaviour of slender timber elements under axial compression exposed to fire. Taking into account the investigat

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36

Kakireddy, Veera Raghava R. "Effect of temperature on copper chemical mechanical planarization." [Tampa, Fla.] : University of South Florida, 2007. http://purl.fcla.edu/usf/dc/et/SFE0001973.

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37

Takahashi, Junji 1951. "Effect of high temperature on lettuce seed development." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276828.

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More vegetable seeds are needed for developing countries to produce more vegetables. However, high temperature in these areas limits vegetable seed production. Leaf lettuce (Lactuca sativa L.) was grown in growth chambers at 21°C and exposed to different temperatures (28, 35, 38 and 42°C) for different exposure times (1, 4 and 7 hours) when flowers were at seven stages of development near anthesis.

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38

Huang, Yan, and 黃燕. "Temperature dependent hall effect: studies ofGaN on sapphire." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B42577068.

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39

Harvey, Roy Edward. "The effect of high temperature on yeast fermentations." Thesis, Heriot-Watt University, 1988. http://hdl.handle.net/10399/1000.

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40

McGinnity, Frank A. "The effect of temperature on engine gas dynamics." Thesis, Queen's University Belfast, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241518.

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41

Porter, Heidi S. "The effect of febrile temperature on Plasmodium falciparum /." Diss., CLICK HERE for online access, 2007. http://contentdm.lib.byu.edu/ETD/image/etd2225.pdf.

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42

Porter, Heidi Sue. "The Effect of Febrile Temperature on Plasmodium falciparum." BYU ScholarsArchive, 2007. https://scholarsarchive.byu.edu/etd/1573.

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Previously it has been shown that cultures of Plasmodium falciparum died following exposure to a febrile temperature of 40°C, as demonstrated by a decrease in parasitemia of the following generation. In the current study, the effect of 40°C treatment on culture media, erythrocytes, and parasite glucose consumption, were ruled out as possible influences on parasite death, demonstrating that 40°C impacted the parasites directly. Metabolic profiling of DNA synthesis, protein synthesis, and glucose utilization during exposure to 40°C clearly indicated that febrile temperatures had direct effect on

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43

Parks, Olivia Waverly. "Effect of water temperature on cohesive soil erosion." Thesis, Virginia Tech, 2013. http://hdl.handle.net/10919/49663.

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In light of increased stream temperatures due to urbanization and climate change, the<br />effect of water temperature on cohesive soil erosion should be explored. The objectives of this study are to: determine the effect of water temperature on the erosion rates of clay; determine how erosion rates vary with clay mineralogy; and, explore the relationship between zeta potential and erosion rate. Samples of kaolinite- and montmorillonite-sand mixtures, and vermiculite-dominated soil were placed in the wall of a recirculating flume channel using a vertical sample orientation. Erosion rate was me

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44

Doluweera, D. G. Sumith Pradeepa. "Effect of Weak Inhomogeneities in High Temperature Superconductivity." University of Cincinnati / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1227215152.

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Pack, Jessica Spencer. "Effect of Localized Temperature Change on Vigilance Performance." Wright State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=wright1429286666.

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46

Huang, Shun-Hung, and 黃舜鴻. "Schottky barrier Germanium Channel MOSFET and Temperature dependence of Nickel-Germanide Formation andStrain Induced effect on MOS Capacitor." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/00067506333348717410.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>95<br>In this work, we will introduce and discuss three important topics of advancement of metal-oxide-semiconductor field-effect transistors technology which are Schottky-barrier germanium channel MOSFET, Nickel-germanide, and Strain induced effect. By using Si-cap/ε-Ge/Si substrate, we can get Germanium channel. And Platinum (Pt) is deposited as metal Schottky-barrier source/drain of p-type MOSFET. The devices are fabricated by three mask process and overcome some shortcomings from one mask process. Some useful concepts and adjustments are also provided to i

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47

Huang, Shun-Hung. "Schottky barrier Germanium Channel MOSFET and Temperature dependence of Nickel-Germanide Formation and Strain Induced effect on MOS Capacitor." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1707200717052600.

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Ching-Chun, Lu. "Germanium Channel MOSFETs and Temperature Dependence of Nickel-Germanide Formation." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2401200712070300.

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49

Lu, Ching-Chun, and 呂青寯. "Germanium Channel MOSFETs and Temperature Dependence of Nickel-Germanide Formation." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/82199129664869571465.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>95<br>In this thesis, three important topics for discussion for advancement of metal-oxide-semiconductor field-effect transistors (MOSFETs) technology were studied, which are germanium channel Schottky-barrier MOSFETs, Germanide, and laser cutting technology of coated glass for complementary metal-oxide-semiconductor (CMOS) image sensors. Germanium channel was implemented by using Si-cap/ε-Ge/Si substrate and Platinum (Pt) was deposited as metal Schottky-barrier source/drain of p-type MOSFETs. The devices were fabricated by two mask process and overcame the se

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50

Li, Ming-jie, and 李銘捷. "Low Temperature Growth of Silicon-based Epitaxial Heavy Boron-doped Germanium Films and Silicon-based Epitaxial Intrinsic Germanium Films." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/xvt4uw.

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碩士<br>國立中央大學<br>照明與顯示科技研究所<br>104<br>In this study, the silicon-based epitaxial heavy boron-doped germanium films and silicon-based epitaxial intrinsic germanium films is grown by electron cyclotron resonance chemical vapor deposition. Heavy boron-doped germanium epilayer is available for the application in silicon-based germanium photodetectors. In this study, we grow the heavy boron-doped germanium epilayer at vary growth parameter using electron cyclotron resonance chemical vapor deposition system at low growth temperature of 180°c, then the films is annealed, which improve the crystallizat

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