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Journal articles on the topic 'Germanium Effect of temperature on'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Ehrman, Sheryl H., Maria I. Aquino-Class, and Michael R. Zachariah. "Effect of Temperature and Vapor-phase Encapsulation on Particle Growth and Morphology." Journal of Materials Research 14, no. 4 (1999): 1664–71. http://dx.doi.org/10.1557/jmr.1999.0224.

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The effect of in situ vapor phase salt-encapsulation on particle size and morphology was systematically investigated in a sodium co-flow/furnace reactor. The temperature of the furnace was varied, and the primary particle size and degree of agglomeration of the resulting silicon and germanium particles were determined from transmission electron micrograph images of particles sampled in situ. Particle size increased with increasing temperature, a trend expected from our understanding of particle formation in a high-temperature process in the absence of an encapsulant. Germanium, which coalesces

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2

Grillo, Alessandro, Enver Faella, Filippo Giubileo, Aniello Pelella, Francesca Urban, and Antonio Di Bartolomeo. "Temperature Dependence of Germanium Arsenide Field-Effect Transistors Electrical Properties." Materials Proceedings 4, no. 1 (2020): 26. http://dx.doi.org/10.3390/iocn2020-07810.

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In this work, we report the fabrication of germanium arsenide () field-effect transistors with ultrathin channel and their electrical characterizations in a wide temperature range, from to . We show that at lower temperatures, the electrical conduction of the channel is dominated by the 3D variable range hopping but becomes band-type at higher temperatures, after the formation of a highly conducting two-dimensional (2D) channel. The presence of this 2D channel, limited to a few interfacial layers, is confirmed by the observation of an unexpected peak in the temperature dependence of the carrie

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3

Yan, Chaoyi, Mei Yin Chan, Tao Zhang, and Pooi See Lee. "Catalytic Growth of Germanium Oxide Nanowires, Nanotubes, and Germanium Nanowires: Temperature-Dependent Effect." Journal of Physical Chemistry C 113, no. 5 (2009): 1705–8. http://dx.doi.org/10.1021/jp8080386.

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4

Lizunova, Anna, Anastasia Mazharenko, Bulat Masnaviev, et al. "Effects of Temperature on the Morphology and Optical Properties of Spark Discharge Germanium Nanoparticles." Materials 13, no. 19 (2020): 4431. http://dx.doi.org/10.3390/ma13194431.

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We report the spark discharge synthesis of aerosol germanium nanoparticles followed by sintering in a tube furnace at different temperatures varying from 25 to 800 °C. The size, structure, chemical composition and optical properties were studied. We have demonstrated a melting mechanism of nanoparticles agglomerates, the growth of the mean primary particle size from 7 to 51 nm and the reduction of the size of agglomerates with a temperature increase. According to transmission electron microscopy (TEM) and Fourier transform infrared (FTIR) data, primary nanoparticles sintered at temperatures fr

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5

Johnson, G. W., and D. E. Brodie. "The effects of electron bombardment on vacuum-deposited amorphous germanium films." Canadian Journal of Physics 69, no. 5 (1991): 621–26. http://dx.doi.org/10.1139/p91-105.

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Low-energy electron irradiation was used to inhibit crystallite nucleation in a range of substrate temperatures (473–513 K) where crystallite formation would normally be observed. The properties of the amorphous phase obtained closely match the published results for high-temperature annealed (up to 723 K) amorphous germanium films in the precrystallization regime rather than those for amorphous germanium films obtained by annealing them to 513 K. It is shown that the properties of annealed amorphous germanium films are independent of a range of deposition conditions when pure (water free) film

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6

Šerák, Jan, Tomáš Kovalčík, Dalibor Vojtěch, and Pavel Novák. "The Influence of Ge on the Properties of Mg Alloys." Key Engineering Materials 647 (May 2015): 72–78. http://dx.doi.org/10.4028/www.scientific.net/kem.647.72.

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Germanium is an element which is used in metallurgy in a very small extent. Much more significant is its use as a semiconductor material. Most of magnesium alloys are usually used for applications at ambient temperature. The significant decrease in mechanical properties is observed already at the temperature higher than 150°C. This is the reason for the effort to prepare a new low-priced magnesium based alloys with improved mechanical properties at elevated temperatures, e.g. for components of combustion engines. Therefore, new unconventional alloying elements are studied for increase the ther

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7

Yang, C. C., and Qing Jiang. "Effect of Pressure on Melting Temperature of Silicon and Germanium." Materials Science Forum 475-479 (January 2005): 1893–96. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1893.

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The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.

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8

Chen, Hui, Wei Yu Chen, Yun Fei Chen, and Ke Dong Bi. "Out-of-Plane Thermal Conductivity of Silicon Thin Film Doped with Germanium." Advanced Materials Research 1082 (December 2014): 459–62. http://dx.doi.org/10.4028/www.scientific.net/amr.1082.459.

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The out-of-plane thermal conductivity of silicon thin film doped with germanium is calculated by non-equilibrium molecular dynamics simulation using the Stillinger-Weber potential model. The silicon thin film is doped with germanium atoms in a random doping pattern with a doping density of 5% and 50% respectively. The effect of silicon thin film thickness on its thermal conductivity is investigated. The simulated thicknesses of silicon thin film doped with germanium range from 2.2 to 10.9 nm at an average temperature 300K. The simulation results indicate that the out-of-plane thermal conductiv

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9

Mamand, S. M., and M. S. Omar. "Effect of Parameters on Lattice Thermal Conductivity in Germanium Nanowires." Advanced Materials Research 832 (November 2013): 33–38. http://dx.doi.org/10.4028/www.scientific.net/amr.832.33.

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Modified Callaway's theory was used to calculate lattice thermal conductivity (LTC) of Germanium nanowires. Results are compared to those of experimental values of the temperature dependence of LTC for nanowire diameters of 62, 19, and 15nm. In this calculation, both longitudinal and transverse modes are taken into account. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Effect of parameters, phonon confinement and imperfections in limiting thermal conductivity for the nanowires unde

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10

Luniov, S. V., P. F. Nazarchuk, and O. V. Burban. "Electrical properties of strained germanium nanofilm." Physics and Chemistry of Solid State 22, no. 2 (2021): 313–20. http://dx.doi.org/10.15330/pcss.22.2.313-320.

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Dependences of the concentration of intrinsic current carriers, electron and hole mobilities and specific conductivity for strained germanium nanofilms grown on the Si, Ge(0,64)Si(0,36) and Ge(0,9)Si(0,1) substrates with crystallographic orientation (001), on their thickness at different temperatures were calculated on the basis of the statistics of non-degenerate two-dimensional electron and hole gas in semiconductors. The electrical properties of such nanofilms are determined by the peculiarities of their band structure. It is established that the effects of dimensional quantization, the pro

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11

Parisi, J., J. Peinke, U. Rau, and K. M. Mayer. "Hall-effect measurements during low-temperature avalanche breakdown of p-germanium." Philosophical Magazine Letters 57, no. 6 (1988): 311–14. http://dx.doi.org/10.1080/09500838808214719.

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12

Gavrilin, Ilya. "Effect of Process Temperature on the Growth Kinetic and Structure of Ge Nanowires Formed by Galvanostatic Electrodeposition Using in Nanoparticles." Solid State Phenomena 312 (November 2020): 80–85. http://dx.doi.org/10.4028/www.scientific.net/ssp.312.80.

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In this work, germanium nanowires (GeNWs) were fabricated by galvanostatic electrodeposition using In nanoparticles from water solutions at different temperatures. It was found that in the temperature range from 10°C to 60°C there was no significant change in the structure of GeNWs, and the average diameter was about 40 nm. The growth time of GeNWs increases linearly with increasing temperature of the electrolyte solution. However, the structure of GeNW obtained at a solution temperature of 90°C has changed. It was shown that these GeNWs have a core-shell structure: the core is a crystalline G

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13

HIEU, HO KHAC, and VU VAN HUNG. "ISOTOPIC EFFECT IN DEBYE–WALLER FACTOR OF CRYSTALLINE GERMANIUM." Modern Physics Letters B 27, no. 26 (2013): 1350191. http://dx.doi.org/10.1142/s0217984913501911.

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The statistical moment method has been used to study the effect of isotopic mass difference on extended X-ray absorption fine structure (EXAFS) Debye–Waller factor of crystalline germanium. The effects on the parallel mean-square relative displacement and the atomic mean square displacements have been considered. This research also exposed that isotopic effect is noticeable where the correlated atomic motion is concerned. Numerical calculations have been performed for two isotopes 70 Ge and 76 Ge in range of temperature from 0 K to 600 K. Our results are compared with available experimental EX

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14

LI, YuZhi, Xin MAO, Xuan SHI, ChunXiang WANG, HongQuan ZHAO, and JunZhong WANG. "Effect of thermal treatment temperature on the resistance of gold germanium films." SCIENTIA SINICA Physica, Mechanica & Astronomica 49, no. 1 (2018): 017002. http://dx.doi.org/10.1360/sspma2018-00154.

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15

Soleimani-Dorcheh, A., W. Donner, and M. C. Galetz. "On ultra-high temperature oxidation of Cr-Cr3Si alloys: Effect of germanium." Materials and Corrosion 65, no. 12 (2014): 1143–50. http://dx.doi.org/10.1002/maco.201307423.

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16

Schricker, April D., Sachin V. Joshi, Tobias Hanrath, Sanjay K. Banerjee, and Brian A. Korgel. "Temperature Dependence of the Field Effect Mobility of Solution-Grown Germanium Nanowires." Journal of Physical Chemistry B 110, no. 13 (2006): 6816–23. http://dx.doi.org/10.1021/jp055663n.

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17

Werner, M., H. Mehrer, and H. D. Hochheimer. "Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium." Physical Review B 32, no. 6 (1985): 3930–37. http://dx.doi.org/10.1103/physrevb.32.3930.

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18

As, Donat J., Michael Deppe, Jürgen Gerlach, and Dirk Reuter. "Optical Properties of Germanium Doped Cubic GaN." MRS Advances 2, no. 5 (2016): 283–88. http://dx.doi.org/10.1557/adv.2016.637.

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ABSTRACTWe report on recent doping experiments of cubic GaN epilayers by Ge and investigate in detail the optical properties by photoluminescence spectroscopy. Plasma-assisted molecular beam epitaxy was used to deposit Ge-doped cubic GaN layers with nominal thicknesses of 600 nm on 3C-SiC(001)/Si(001) substrates. The Ge doping level could be varied by around six orders of magnitude by changing the Ge effusion cell temperature. A maximum free carrier concentration of 3.7×1020 cm-3 was measured in the GaN layers via Hall-effect at room temperature. Low temperature photoluminescence (PL) showed a

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19

Sedky, Sherif, Ann Witvrouw, Annelies Saerens, Paul Van Houtte, Jef Poortmans, and Kris Baert. "Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 °C." Journal of Materials Research 16, no. 9 (2001): 2607–12. http://dx.doi.org/10.1557/jmr.2001.0358.

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This paper reports on the role of boron in situ doping on enhancing crystallization of silicon germanium deposited at 400 °C and 2 torr. The dependence of growth rate on germanium content and boron concentration is investigated. The minimum boron concentration and the minimum germanium content required for crystallizing the as-grown layers is experimentally determined. The texture and grain microstructure of doped and undoped poly SiGe layers has been investigated by means of x-ray diffraction spectroscopy and transmission electron microscopy. The low deposition temperature coupled with the lo

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20

Schiavon, Dario, Elżbieta Litwin-Staszewska, Rafał Jakieła, Szymon Grzanka, and Piotr Perlin. "Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium." Materials 14, no. 2 (2021): 354. http://dx.doi.org/10.3390/ma14020354.

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The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

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21

Harani, Ravishankar, C. A. Hogarth, M. M. Ahmed, and M. N. Khan. "The effect of temperature on the optical absorption edge of germanium vanadate glass." Journal of Materials Science Letters 4, no. 9 (1985): 1160–62. http://dx.doi.org/10.1007/bf00720442.

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22

Gong, X., Y. Yang, P. Guo, et al. "(Invited) Germanium-Tin P-Channel Field-Effect Transistor with Low-Temperature Si2H6 Passivation." ECS Transactions 64, no. 6 (2014): 851–68. http://dx.doi.org/10.1149/06406.0851ecst.

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23

CHEW, H. G., W. K. CHOI, W. K. CHIM, and E. A. FITZGERALD. "FABRICATION OF GERMANIUM NANOWIRES BY OBLIQUE ANGLE DEPOSITION." International Journal of Nanoscience 05, no. 04n05 (2006): 523–27. http://dx.doi.org/10.1142/s0219581x06004735.

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In this work, the effects of flux angle, substrate temperature and deposition rate on obliquely deposited germanium ( Ge ) films have been investigated. We observed that the porosity of the film increased as the flux angle became more oblique. It was also possible to obtain polycrystalline Ge films at a substrate temperature of 200°C when deposition was performed using an oblique angle of 87° as compared to normal incident deposition. Raman spectroscopy results indicated that a higher substrate temperature during deposition led to an increase in crystallinity of the film. Agglomeration of the

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24

Tukmakova, Anastasiia, Anna Novotelnova, Kseniia Samusevich, et al. "Simulation of Field Assisted Sintering of Silicon Germanium Alloys." Materials 12, no. 4 (2019): 570. http://dx.doi.org/10.3390/ma12040570.

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We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on the experimental data collected from spark plasma sintering (SPS) apparatus. The thermoelectric properties of Si-Ge used within the simulation were considered as the function of density and the sintering temperature. Quantitative estimation of the temperature distribution during the sintering pointed to

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25

Rubinsztajn, Slawomir, Urszula Mizerska, Joanna Zakrzewska, Pawel Uznanski, Marek Cypryk, and Witold Fortuniak. "Effect of temperature on B(C6F5)3-catalysed reduction of germanium alkoxides by hydrosilanes – a new route to germanium nanoparticles." Dalton Transactions 49, no. 22 (2020): 7319–23. http://dx.doi.org/10.1039/d0dt01555e.

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The reaction of Ge(OBu)<sub>4</sub> with PhMe<sub>2</sub>SiH in the presence of B(C<sub>6</sub>F<sub>5</sub>)<sub>3</sub> carried out at temperatures above 100 °C provides a simple one-pot method for Ge NPs synthesis under mild conditions.

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26

Васильченко, А. А., В. С. Кривобок, С. Н. Николаев, В. С. Багаев, Е. Е. Онищенко та Г. Ф. Копытов. "Спектр излучения и стабильность двух типов электронно-дырочной жидкости в мелких Si/Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=-Si квантовых ямах". Физика твердого тела 62, № 4 (2020): 529. http://dx.doi.org/10.21883/ftt.2020.04.49115.555.

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Abstract Based on calculations within the density functional theory and an analysis of low-temperature photoluminescence spectra, the structure of electron–hole liquid in shallow Si/Si_1 – _ x Ge_ x Si (100) quantum wells 5 nm wide with germanium content x = 3–5.5% is studied. It is shown that the energy of quasi-two-dimensional electron–hole liquid localized in quantum wells for this composition range as a function of carrier concentration exhibits two local minima. The position of the deeper (major) minimum depends on the quantum well design and controls properties of quasi-two-dimensional e

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27

Balatero, Marissa A., Giovanni J. Paylaga, Naomi T. Paylaga, and Rolando V. Bantaculo. "Molecular Dynamics Simulations of Thermal Conductivity of Germanene Nanoribbons (GeNR) with Armchair and Zigzag Chirality." Applied Mechanics and Materials 772 (July 2015): 67–71. http://dx.doi.org/10.4028/www.scientific.net/amm.772.67.

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Germanene, an allotrope of germanium which is a two dimensional material withsp2hybridization, has almost the same properties with graphene except for its buckled structure. In this study, germanium nanoribbon (GeNR) is use for it is still a new material for nanoscale level of research. In this paper, we investigate the effect of chirality on the thermal conductivity of zigzag GeNR (ZGeNR) and armchair GeNR (AGeNR) chiralities using equilibrium molecular dynamics with varied lengths at fixed temperature and varied temperatures at fixed length. The simulations were carried out in Large-scale At

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28

Tyschenko, Ida E., A. G. Cherkov, M. Voelskow, and V. P. Popov. "SiGe Heterostructures-on-Insulator Produced by Ge⁺-Ion Implantation and Subsequent Hydrogen Transfer." Solid State Phenomena 131-133 (October 2007): 143–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.143.

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The properties of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon-on-insulator (SOI) structures are studied. It is shown that no germanium nanocrystals are formed in the buried SiO2 layer of the SOI structure as a result of annealing at the temperature of 1100° C. The implanted Ge atoms segregate at the Si/SiO2 bonding interface. In this case, Ge atoms are found at sites that are coherent with the lattice of the top silicon layer. It is found that the slope of the drain–gate characteristics of the back metal-oxide-semiconductor (MOS) transistors, pr

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29

Battezzati, L., F. Demichelis, C. F. Pirri, and E. Tresso. "Effects of temperature on structural properties of hydrogenated amorphous silicon‐germanium and carbon‐silicon‐germanium alloys." Journal of Applied Physics 69, no. 4 (1991): 2029–32. http://dx.doi.org/10.1063/1.348727.

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30

Al-Sharafi, Z., S. Mohyeddine, Samir Osman Mohammed, and R. M. Kershi. "Structural and Optical Properties of Germanium Thin Films Prepared by the Vacuum Evaporation Technique." Physics Research International 2014 (February 17, 2014): 1–7. http://dx.doi.org/10.1155/2014/594968.

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Germanium (Ge) thin films have been deposited onto the glass substrates by the vacuum evaporation technique. The effect of annealing temperature on the structural and optical properties of the germanium thin films was investigated. The structural and optical properties of thin films were characterized by XRD, SEM, and UV-Vis techniques. XRD results showed that the structure of the deposited thin films changed from amorphous phase for the films, which deposited at room temperature, to crystalline phase for the films, which deposited at high temperature. Optimum temperature to obtain a good crys

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31

Levang, Samuel J., and James R. Doyle. "Properties of Hydrogenated Amorphous Silicon-Germanium Alloys Deposited by Dual Target Reactive Magnetron Sputtering." MRS Proceedings 1426 (2012): 301–6. http://dx.doi.org/10.1557/opl.2012.1093.

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ABSTRACTHydrogenated amorphous silicon-germanium alloy thin films (a-Si1-xGex:H) were deposited using reactive magnetron sputtering. Dual targets of silicon and germanium were sputtered in an argon + hydrogen atmosphere using rf excitation. Films with x = 0.4 were deposited as a function of substrate temperature and hydrogen partial pressure, and were evaluated by dark and photoconductivity, infrared absorption, and optical transmission. Photosensitivity reached a maximum value of about 5000 between 150 and 200 °C. Using the stretching modes in the region of 2000 cm-1, the hydrogen bonding was

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32

Gatos, Harry C., and Mary C. Lavine. "CRYSTALLOGRAPHIC ORIENTATION EFFECTS ON SOME HIGH TEMPERATURE REACTIONS OF GERMANIUM." Annals of the New York Academy of Sciences 101, no. 3 (2006): 983–1000. http://dx.doi.org/10.1111/j.1749-6632.1963.tb54951.x.

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33

Miyawaki, Ako, Toshiaki Hayashi, Tomoharu Tokunaga, Akari Hayashi, Yasuhiko Hayashi, and Masaki Tanemura. "Low-Temperature Fabrication of Germanium Nanostructures by Ion Irradiation: Effect of Supplied Particle Species." Japanese Journal of Applied Physics 51, no. 1 (2012): 01AB05. http://dx.doi.org/10.1143/jjap.51.01ab05.

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34

Miyawaki, Ako, Toshiaki Hayashi, Tomoharu Tokunaga, Akari Hayashi, Yasuhiko Hayashi, and Masaki Tanemura. "Low-Temperature Fabrication of Germanium Nanostructures by Ion Irradiation: Effect of Supplied Particle Species." Japanese Journal of Applied Physics 51, no. 1S (2012): 01AB05. http://dx.doi.org/10.7567/jjap.51.01ab05.

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35

Das, Rajashree, and Srimanta Baishya. "Investigation on Effect of Temperature on Dual Gate Material Gate/Drain Underlap Germanium FinFET." Journal of Nanoelectronics and Optoelectronics 13, no. 7 (2018): 980–85. http://dx.doi.org/10.1166/jno.2018.2339.

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36

Zi Feng, Lim, and Lim Joon Hoong. "Effect of temperature mismatch on the life cycle of thermoelectric generator efficiency for waste heat recovery." MATEC Web of Conferences 335 (2021): 03010. http://dx.doi.org/10.1051/matecconf/202133503010.

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Global warming due to greenhouse gases that has been produced by energy generator as a byproduct has becoming a serious issue in recent decades. Thermoelectric module is an alternative method that can generate energy from heat and vice versa. The module is denominated as thermoelectric generator (TEG) when it is used to generate electricity via a process called the Seebeck effect. The use of thermoelectric generator has become more and more demanding due to the low maintenance cost and waste heat availability can be found everywhere in daily life such as car exhaust, roof tiles, and etc. The p

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Sharma, Ambika, and P. B. Barman. "Effect of Bi Additions upon the Physical Properties of Germanium Telluride Glassy Semiconductors." Defect and Diffusion Forum 293 (August 2009): 107–12. http://dx.doi.org/10.4028/www.scientific.net/ddf.293.107.

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The effect of bismuth (Bi) additions upon the physical properties, coordination number (m), constraints (Nc), density (ρ), molar volume (Vm), cohesive energy (CE), lone pair electrons (L) and glass transition temperature (Tg) of Ge20Te80-xBix (x = 0, 1.5, 2.5, 5.0) bulk glassy alloy has been investigated. The density and molar volume of the glassy alloys has been found to increase with increasing Bi content. The CE of the investigated samples has been calculated by using the chemical bond approach (CBA) and is correlated with a decrease in the optical band-gap with increasing Bi content. The g

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38

Xu, Shang, Ya Li Nan, and Ling Sun. "Visible Photoluminescence of Gas Phase Synthesized Well-Defined Germanium Oxide Nanoparticles." Applied Mechanics and Materials 618 (August 2014): 28–32. http://dx.doi.org/10.4028/www.scientific.net/amm.618.28.

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Substoichiometric germanium oxide nanoparticles were synthesized through gas aggregation process with a careful control on the size, composition and crystallinity of the nanoparticles. The nanoparticles show broad room temperature photoluminescence (PL) in the 470nm to 600nm wavelength region. The microstructure and optical properties of the nanoparticles were investigated. We found that the photoluminescence behavior of the nanoparticles is critically influenced by their compositions. Through temperature-dependent photoluminescence and time-resolved photoluminescence spectroscopy, we conclude

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39

S. A.Aziz, M., F. H. M.Fauzi, Z. Mohamad, and R. I. Alip. "The Effect of Channel Length on Phase Transition of Phase Change Memory." International Journal of Engineering & Technology 7, no. 3.11 (2018): 25. http://dx.doi.org/10.14419/ijet.v7i3.11.15923.

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The phase transition of germanium antimony tellurium (GST) and the temperature of GST were investigated using COMSOL Multiphysic 5.0 software. Silicon carbide was using as a heater layer in the separate heater structure of PCM. These simulations have a different channel of SiC. The temperature of GST and the phase transition of GST can be obtained from the simulation. From the simulation, the 300 nm channel of SiC can change the GST from amorphous to crystalline state at 0.7V with 100 ns pulse width. The 800 nm channel of SiC can change the GST from amorphous to crystalline state at 1.1V with

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40

Xie, Lu, Huilong Zhu, Yongkui Zhang, et al. "Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium." Nanomaterials 10, no. 9 (2020): 1715. http://dx.doi.org/10.3390/nano10091715.

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With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and the high carrier mobility in the channel region. In this work, a novel process to form the structure for a VGAA transistor with a Ge channel is presented. The structure consists of multilayers of Si0.2Ge0.8/Ge grown on a Ge buffer layer grown by the reduced pressure chemical vapor deposition technique

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41

Ivanda, Mile, M. Buljan, U. V. Desnica, et al. "Low Frequency Coherent Raman Scattering of Spherical Acoustical Vibrations of Three-Dimensional Self-Organized Germanium Nanocrystals." Advances in Science and Technology 55 (September 2008): 127–31. http://dx.doi.org/10.4028/www.scientific.net/ast.55.127.

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The Ge+SiO2 and SiO2 alternating multilayers are prepared by the magnetron sputtering of germanium and silica targets. By controlling the substrate temperature and by subsequent thermal annealing, the self-organized germanium quantum dots in 3D rombohedral (R 3 m) superlattice are produced. The polarized low-frequency Raman scattering measurements shows the coherent effects on the symmetric and quadrupolar spheroidal vibrations of Ge nanocrystals. It has been shown that the coherence effects are dependent on degree of Ge-ordering in the superlattice.

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Wang, Jin, Ke Tao, and Guo Feng Li. "Heteroepitaxial Growth of Ge-Rich SiGe Films on Si for Solar Cells." Advanced Materials Research 1014 (July 2014): 216–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1014.216.

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Germanium-rich silicon-germanium (Si1-xGex: 0.98≤x≤1) films were epitaxially grown on Si (001) substrate by reactive thermal chemical vapor deposition at low temperature. Si2H6and GeF4were used as source gases. The effect of gas flow ratio between Si2H6and GeF4was studied to optimize the film quality. The results indicated that Si1-xGex(x≥0.99) epilayer can be prepared directly on Si wafer at 350°C with a threading dislocation density of ~7×105/cm2and surface RMS roughness of 1.0 nm. Hall-effect and conductivity measurements revealed that the epilayer was p-type conduction with the hall mobili

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KASPER, E. "STRAINED SILICON GERMANIUM HETEROSTRUCTURES FOR DEVICE APPLICATIONS." International Journal of Modern Physics B 16, no. 28n29 (2002): 4189–94. http://dx.doi.org/10.1142/s0217979202015054.

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Silicon Germanium is lattice mismatched to Silicon by up to 4.2% depending on the Ge content. Up to a critical thickness elastic strain accommodates the mismatch. The band ordering of SiGe/Si interfaces is strongly influenced by the strain shifting the band ordering from flat conduction band to a type II ordering when proper strain adjustment is performed. As device examples the heterobipolartransistor, hetero field effect transistor and room temperature Esaki tunneling are treated. As key questions for further material development are identified the growth and processing of ultrametastable la

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Chen, Yuqian, Junwen Zhou, Libo Zhang, et al. "Microwave-assisted and regular leaching of germanium from the germanium-rich lignite ash." Green Processing and Synthesis 7, no. 6 (2018): 538–45. http://dx.doi.org/10.1515/gps-2017-0137.

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Abstract Demand for germanium (Ge) is rapidly growing in recent years in various fields including semiconductors, aerospace, and solar cells. However, the Ge resources are very limited in the world. Hence, in this work, microwave-assisted leaching and conventional leaching methods are employed for the leaching of Ge from the Ge-rich lignite ash (GA). The effects of leaching temperature, leaching time, initial acid concentration, oxidizing agent amount, and stirring speed on leaching of Ge were investigated and microwave-assisted and conventional methods of leaching were compared. Here, HCl sol

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Iftikhar, H., S. Bashir, A. Dawood, et al. "Magnetic field effect on laser-induced breakdown spectroscopy and surface modifications of germanium at various fluences." Laser and Particle Beams 35, no. 1 (2017): 159–69. http://dx.doi.org/10.1017/s0263034617000039.

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AbstractThe effect of the transverse magnetic field on laser-induced breakdown spectroscopy and surface modifications of germanium (Ge) has been investigated at various fluences. Ge targets were exposed to Nd: YAG laser pulses (1064 nm, 10 ns, 1 Hz) at different fluences ranging from 3 to 25.6 J/cm2 to generate Ge plasma under argon environment at a pressure of 50 Torr. The magnetic field of strength 0.45 Tesla perpendicular to the direction of plasma expansion was employed by using two permanent magnets. The emission spectra of laser-induced Ge plasma was detected by the laser-induced breakdo

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Guillet, Denis, M. Sarret, H. Lhermite, and O. Bonnaud. "Effect of Pressure and Temperature on the Electrical Properties of LPCVD Silicon-Germanium Thin Films." Solid State Phenomena 80-81 (November 2001): 89–94. http://dx.doi.org/10.4028/www.scientific.net/ssp.80-81.89.

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David, M. L., F. Pailloux, D. Babonneau, et al. "The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium." Journal of Applied Physics 102, no. 9 (2007): 096101. http://dx.doi.org/10.1063/1.2803715.

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Zharkikh, Yu S., and S. V. Lysochenko. "Effect of low-temperature annealing upon electrophysical parameters for germanium surfaces cleaved in liquid helium." Surface Science Letters 177, no. 3 (1986): A611. http://dx.doi.org/10.1016/0167-2584(86)90732-2.

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Zharkikh, Yu S., and S. V. Lysochenko. "Effect of low-temperature annealing upon electrophysical parameters for germanium surfaces cleaved in liquid helium." Surface Science 177, no. 3 (1986): 615–24. http://dx.doi.org/10.1016/0039-6028(86)90036-1.

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Hull, E. L., R. H. Pehl, N. W. Madden, et al. "Temperature sensitivity of surface channel effects on high-purity germanium detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 364, no. 3 (1995): 488–95. http://dx.doi.org/10.1016/0168-9002(95)00339-8.

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