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Journal articles on the topic 'Germanium on insulator'

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Author: Grafiati

Published: 8 May 2022

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1

Hoshi, Yusuke, Kentarou Sawano, Kohei Hamaya, Masanobu Miyao, and Yasuhiro Shiraki. "Formation of Tensilely Strained Germanium-on-Insulator." Applied Physics Express 5, no. 1 (December 19, 2011): 015701. http://dx.doi.org/10.1143/apex.5.015701.

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2

Tracy, Clarence J., Peter Fejes, N. David Theodore, Papu Maniar, Eric Johnson, Albert J. Lamm, Anthony M. Paler, Igor J. Malik, and Philip Ong. "Germanium-on-insulator substrates by wafer bonding." Journal of Electronic Materials 33, no. 8 (August 2004): 886–92. http://dx.doi.org/10.1007/s11664-004-0216-5.

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3

Morshed, Tahsin, Yuki Kai, Ryo Matsumura, Jong-Hyeok Park, Hironori Chikita, Taizoh Sadoh, and Abdul Manaf Hashim. "Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure." Materials Letters 168 (April 2016): 223–27. http://dx.doi.org/10.1016/j.matlet.2016.01.056.

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4

Maeda, Tatsuro, Masayasu Nishizawa, Yukinori Morita, and Shinichi Takagi. "Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures." Applied Physics Letters 90, no. 7 (February 12, 2007): 072911. http://dx.doi.org/10.1063/1.2679941.

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5

Liu, Bin, Xiao Gong, Chunlei Zhan, Genquan Han, Hock-Chun Chin, Moh-Lung Ling, Jie Li, et al. "Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate." IEEE Transactions on Electron Devices 60, no. 6 (June 2013): 1852–60. http://dx.doi.org/10.1109/ted.2013.2258924.

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6

Chao, Y. L., S. Prussin, J. C. S. Woo, and R. Scholz. "Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator." Applied Physics Letters 87, no. 14 (October 3, 2005): 142102. http://dx.doi.org/10.1063/1.2076440.

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7

Bao, Shuyu, Kwang Hong Lee, Cong Wang, Bing Wang, Riko I. Made, Soon Fatt Yoon, Jurgen Michel, Eugene Fitzgerald, and Chuan Seng Tan. "Germanium-on-insulator virtual substrate for InGaP epitaxy." Materials Science in Semiconductor Processing 58 (February 2017): 15–21. http://dx.doi.org/10.1016/j.mssp.2016.11.001.

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8

Bao, Shuyu, Kwang Hong Lee, Cong Wang, Bing Wang, Riko I. Made, Soon Fatt Yoon, Jurgen Michel, Eugene Fitzgerald, and Chuan Seng Tan. "Germanium-on-insulator virtual substrate for InGaP epitaxy." Materials Science in Semiconductor Processing 70 (November 2017): 17–23. http://dx.doi.org/10.1016/j.mssp.2017.07.012.

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9

Seo, J. W., Ch Dieker, A. Tapponnier, Ch Marchiori, M. Sousa, J. P. Locquet, J. Fompeyrine, et al. "Epitaxial germanium-on-insulator grown on (001) Si." Microelectronic Engineering 84, no. 9-10 (September 2007): 2328–31. http://dx.doi.org/10.1016/j.mee.2007.04.019.

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10

Ferreira da Silva, A. "Metal-insulator transitions in doped silicon and germanium." Physical Review B 37, no. 9 (March 15, 1988): 4799–800. http://dx.doi.org/10.1103/physrevb.37.4799.

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11

Poborchii, Vladimir, Hiroyuki Ishii, Hiroyuki Hattori, Wen-Hsin Chang, Tatsuro Maeda, Tetsuya Tada, and Pavel I. Geshev. "Raman spectroscopic characterization of germanium-on-insulator nanolayers." Applied Physics Letters 108, no. 8 (February 22, 2016): 083107. http://dx.doi.org/10.1063/1.4942607.

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12

Colace, L., V. Sorianello, M. Balbi, and G. Assanto. "Germanium near infrared detector in silicon on insulator." Applied Physics Letters 91, no. 2 (July 9, 2007): 021107. http://dx.doi.org/10.1063/1.2757123.

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13

Balakumar, S., K. M. Hoe, G. Q. Lo, R. Kumar, N. Balasubramanian, Y. L. Foo, S. Tripathy, and D. L. Kwong. "Fabrication of Thick Germanium-on-Insulator (GeOI) Substrates." Journal of Electronic Materials 37, no. 7 (April 4, 2008): 944–50. http://dx.doi.org/10.1007/s11664-008-0413-8.

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14

Ruan, Yujiao, Rui Liu, Wang Lin, Songyan Chen, Cheng Li, Hongkai Lai, Wei Huang, and Xiaoying Zhang. "Impacts of Thermal Annealing on Hydrogen-Implanted Germanium and Germanium-on-Insulator Substrates." Journal of The Electrochemical Society 158, no. 11 (2011): H1125. http://dx.doi.org/10.1149/2.022111jes.

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15

Nam, Ju Hyung, Sabri Alkis, Donguk Nam, Farzaneh Afshinmanesh, Jaewoo Shim, Jin-Hong Park, Mark Brongersma, Ali Kemal Okyay, Theodore I. Kamins, and Krishna Saraswat. "Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon." Journal of Crystal Growth 416 (April 2015): 21–27. http://dx.doi.org/10.1016/j.jcrysgro.2014.11.004.

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16

Feng, Song, and Bin Xue. "Research into Two Photonic-Integrated Waveguides Based on SiGe Material." Materials 13, no. 8 (April 16, 2020): 1877. http://dx.doi.org/10.3390/ma13081877.

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Abstract:

SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, namely the SiGe-SOI (Silicon Germanium-Silicon-On-Insulator) waveguide and the SiGe-OI (Silicon Germanium-On-Insulator) waveguide. In order to verify which structure has the better waveguide performance, two waveguide structures are built, and the effective refractive indexes and the loss characteristics of the two waveguides are analyzed and compared. By simulation, the SiGe-OI optical waveguide has better losses characteristics at a wavelength of 1.55 μm. Finally, SiGe-OI and SiGe-SOI waveguides are fabricated and tested to verify the correctness of theoretical analysis, and the experimental results show that the transmission losses of the SiGe-OI waveguide are respectively decreased by 36.6% and 28.3% at 400 nm and 600 nm waveguide width in comparison with the SiGe-SOI waveguide. The results also show that the SiGe-OI waveguide has better loss characteristics than those of the SiGe-SOI waveguide at the low Ge content.

17

Tyschenko, Ida E., A. G. Cherkov, M. Voelskow, and V. P. Popov. "SiGe Heterostructures-on-Insulator Produced by Ge⁺-Ion Implantation and Subsequent Hydrogen Transfer." Solid State Phenomena 131-133 (October 2007): 143–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.143.

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Abstract:

The properties of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon-on-insulator (SOI) structures are studied. It is shown that no germanium nanocrystals are formed in the buried SiO2 layer of the SOI structure as a result of annealing at the temperature of 1100° C. The implanted Ge atoms segregate at the Si/SiO2 bonding interface. In this case, Ge atoms are found at sites that are coherent with the lattice of the top silicon layer. It is found that the slope of the drain–gate characteristics of the back metal-oxide-semiconductor (MOS) transistors, prepared in the Ge+ ion implanted structures, increases. This effect is attributed to the grown hole mobility due to the contribution of an intermediate germanium layer formed at the Si/SiO2 interface.

18

Signamarcheix, T., F. Allibert, F. Letertre, T. Chevolleau, L. Sanchez, E. Augendre, C. Deguet, H. Moriceau, L. Clavelier, and F. Rieutord. "Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates." Applied Physics Letters 93, no. 2 (July 14, 2008): 022109. http://dx.doi.org/10.1063/1.2960345.

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19

Taoka, Noriyuki, Keiji Ikeda, Toyoji Yamamoto, Yoshimi Yamashita, Masatomi Harada, Kunihiro Suzuki, Osamu Kiso, Naoharu Sugiyama, and Shin-ichi Takagi. "Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain." ECS Transactions 13, no. 1 (December 18, 2019): 275–85. http://dx.doi.org/10.1149/1.2911508.

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20

El Kurdi, M., S. David, X. Checoury, G. Fishman, P. Boucaud, O. Kermarrec, D. Bensahel, and B. Ghyselen. "Two-dimensional photonic crystals with pure germanium-on-insulator." Optics Communications 281, no. 4 (February 2008): 846–50. http://dx.doi.org/10.1016/j.optcom.2007.10.008.

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21

Jin, Hai-Yan, and Nathan W. Cheung. "Forming Gas Annealing Characteristics of Germanium-on-Insulator Substrates." IEEE Electron Device Letters 29, no. 7 (July 2008): 674–76. http://dx.doi.org/10.1109/led.2008.2000602.

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22

Chin, Albert, C. Chen, D. S. Yu, H. L. Kao, S. P. McAlister, and C. C. Chi. "Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS." Materials Science in Semiconductor Processing 9, no. 4-5 (August 2006): 711–15. http://dx.doi.org/10.1016/j.mssp.2006.08.066.

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23

Tani, Kazuki, Shin-ichi Saito, Yong Lee, Katsuya Oda, Toshiyuki Mine, Toshiki Sugawara, and Tatemi Ido. "Light Detection and Emission in Germanium-on-Insulator Diodes." Japanese Journal of Applied Physics 51 (April 20, 2012): 04DG09. http://dx.doi.org/10.1143/jjap.51.04dg09.

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24

Ghosh, Soumava, Kuan-Chih Lin, Cheng-Hsun Tsai, Kwang Hong Lee, Qimiao Chen, Bongkwon Son, Bratati Mukhopadhyay, Chuan Seng Tan, and Guo-En Chang. "Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors." Optics Express 28, no. 16 (July 27, 2020): 23739. http://dx.doi.org/10.1364/oe.398046.

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25

Tani, Kazuki, Shin-ichi Saito, Yong Lee, Katsuya Oda, Toshiyuki Mine, Toshiki Sugawara, and Tatemi Ido. "Light Detection and Emission in Germanium-on-Insulator Diodes." Japanese Journal of Applied Physics 51, no. 4S (April 1, 2012): 04DG09. http://dx.doi.org/10.7567/jjap.51.04dg09.

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26

da Silva, A. Ferreira. "Erratum: Metal-insulator transitions in doped silicon and germanium." Physical Review B 39, no. 8 (March 15, 1989): 5475. http://dx.doi.org/10.1103/physrevb.39.5475.

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27

Abedin, Ahmad, Laura Zurauskaite, A. Asadollahi, Konstantinos Garidis, Ganesh Jayakumar, B. Gunnar Malm, Per-Erik Hellstrom, and Mikael Ostling. "Germanium on Insulator Fabrication for Monolithic 3-D Integration." IEEE Journal of the Electron Devices Society 6 (2018): 588–93. http://dx.doi.org/10.1109/jeds.2018.2801335.

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28

Lin, Wang, Yujiao Ruan, Songyan Chen, Cheng Li, Hongkai Lai, and Wei Huang. "The impact of polishing on germanium-on-insulator substrates." Journal of Semiconductors 34, no. 8 (August 2013): 083005. http://dx.doi.org/10.1088/1674-4926/34/8/083005.

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29

Cheng, Zhiyuan, Gianni Taraschi, Matthew T. Currie, Chris W. Leitz, Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri A. Antoniadis, and Eugene A. Fitzgerald. "Relaxed silicon-germanium on insulator substrate by layer transfer." Journal of Electronic Materials 30, no. 12 (December 2001): L37—L39. http://dx.doi.org/10.1007/s11664-001-0182-0.

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30

Johnson, Gregory A., and Vik J. Kapoor. "Plasma‐deposited germanium nitride gate insulators for indium phosphide metal‐insulator‐semiconductor field‐effect transistors." Journal of Applied Physics 69, no. 6 (March 15, 1991): 3616–22. http://dx.doi.org/10.1063/1.348508.

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31

An, Zhenghua, Yanjun Wu, Miao Zhang, Zengfeng Di, Chenglu Lin, Ricky K. Y. Fu, Peng Chen, Paul K. Chu, W. Y. Cheung, and S. P. Wong. "Relaxed silicon–germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure." Applied Physics Letters 82, no. 15 (April 14, 2003): 2452–54. http://dx.doi.org/10.1063/1.1567807.

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32

Deguet, C., L. Sanchez, T. Akatsu, F. Allibert, J. Dechamp, F. Madeira, F. Mazen, et al. "Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium." Electronics Letters 42, no. 7 (2006): 415. http://dx.doi.org/10.1049/el:20060208.

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33

Chen, Xin, Linyang Li, and Mingwen Zhao. "Hydrogenation-induced large-gap quantum-spin-Hall insulator states in a germanium–tin dumbbell structure." RSC Advances 5, no. 89 (2015): 72462–68. http://dx.doi.org/10.1039/c5ra10712a.

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34

Sorianello, V., A. De Iacovo, L. Colace, G. Assanto, D. Fulgoni, L. Nash, and M. Palmer. "Germanium on insulator near-infrared photodetectors fabricated by layer transfer." Thin Solid Films 518, no. 9 (February 2010): 2501–4. http://dx.doi.org/10.1016/j.tsf.2009.09.134.

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35

Huang, Shi-Hao, Cheng Li, Wei-Fang Lu, Chen Wang, Guang-Yang Lin, Hong-Kai Lai, and Song-Yan Chen. "Non-homogeneous SiGe-on-insulator formed by germanium condensation process." Chinese Physics B 23, no. 4 (April 2014): 048109. http://dx.doi.org/10.1088/1674-1056/23/4/048109.

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36

Sun, Chuanchuan, Renrong Liang, Libin Liu, Jing Wang, and Jun Xu. "Leakage current of germanium-on-insulator-based junctionless nanowire transistors." Applied Physics Letters 107, no. 13 (September 28, 2015): 132105. http://dx.doi.org/10.1063/1.4932172.

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37

Bojarczuk, N. A., M. Copel, S. Guha, V. Narayanan, E. J. Preisler, F. M. Ross, and H. Shang. "Epitaxial silicon and germanium on buried insulator heterostructures and devices." Applied Physics Letters 83, no. 26 (December 29, 2003): 5443–45. http://dx.doi.org/10.1063/1.1637716.

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38

Balakumar, S., G. Q. Lo, C. H. Tung, R. Kumar, N. Balasubramanian, D. L. Kwong, C. S. Ong, and M. F. Li. "SiGe amorphization during Ge condensation in silicon germanium on insulator." Applied Physics Letters 89, no. 4 (July 24, 2006): 042115. http://dx.doi.org/10.1063/1.2222341.

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39

Nguyen, Q. T., J. F. Damlencourt, B. Vincent, L. Clavelier, Y. Morand, P. Gentil, and S. Cristoloveanu. "High quality Germanium-On-Insulator wafers with excellent hole mobility." Solid-State Electronics 51, no. 9 (September 2007): 1172–79. http://dx.doi.org/10.1016/j.sse.2007.07.015.

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40

Yu, D. S., H. L. Kao, A. Chin, and S. P. McAlister. "Performance and potential of germanium on insulator field-effect transistors." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24, no. 3 (May 2006): 690–93. http://dx.doi.org/10.1116/1.2167978.

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41

Fazzini, P. F., F. Cristiano, C. Dupré, A. Claverie, T. Ernst, and M. Gavelle. "Defect evolution after germanium preamorphization in silicon on insulator structures." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, no. 1 (2008): 342. http://dx.doi.org/10.1116/1.2802099.

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42

Vinet, M., C. Le Royer, P. Batude, J. F. Damlencourt, J. M. Hartmann, L. Hutin, K. Romanjek, A. Pouydebasque, and O. Thomas. "Germanium on insulator and new 3D architectures opportunities for integration." International Journal of Nanotechnology 7, no. 4/5/6/7/8 (2010): 304. http://dx.doi.org/10.1504/ijnt.2010.031722.

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43

Campbell, I. H., P. M. Fauchet, E. H. Lee, and M. A. Awal. "Raman microprobe study of silicon- and germanium- on-insulator structures." Thin Solid Films 154, no. 1-2 (November 1987): 249–55. http://dx.doi.org/10.1016/0040-6090(87)90369-5.

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44

Alvarez-Quintana, J., J. Rodríguez-Viejo, F. X. Alvarez, and D. Jou. "Thermal conductivity of thin single-crystalline germanium-on-insulator structures." International Journal of Heat and Mass Transfer 54, no. 9-10 (April 2011): 1959–62. http://dx.doi.org/10.1016/j.ijheatmasstransfer.2011.01.006.

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45

Shlimak, I., M. Kaveh, M. J. Lea, P. Fozooni, P. Stefanyi, and A. N. Ionov. "Hopping spectroscopy in doped germanium near the metal-insulator transition." Physica A: Statistical Mechanics and its Applications 200, no. 1-4 (November 1993): 483–90. http://dx.doi.org/10.1016/0378-4371(93)90550-n.

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46

Liu, Xiangquan, Jun Zheng, Yue Zhao, Mingming Li, Linzhi Peng, Fengshuo Wan, Chaoqun Niu, et al. "Germanium lead alloy on insulator grown by rapid melting growth." Journal of Alloys and Compounds 864 (May 2021): 158798. http://dx.doi.org/10.1016/j.jallcom.2021.158798.

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47

Hyun Lee, Choong, Tomonori Nishimura, Toshiyuki Tabata, DanDan Zhao, Kosuke Nagashio, and Akira Toriumi. "Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors." Applied Physics Letters 102, no. 23 (June 10, 2013): 232107. http://dx.doi.org/10.1063/1.4810002.

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48

Jain, J. Raja, Dany-Sebastien Ly-Gagnon, Krishna C. Balram, Justin S. White, Mark L. Brongersma, David A. B. Miller, and Roger T. Howe. "Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics." Optical Materials Express 1, no. 6 (September 16, 2011): 1121. http://dx.doi.org/10.1364/ome.1.001121.

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49

Mavrou, G., S. F. Galata, A. Sotiropoulos, P. Tsipas, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J. W. Seo, and Ch Dieker. "Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric." Microelectronic Engineering 84, no. 9-10 (September 2007): 2324–27. http://dx.doi.org/10.1016/j.mee.2007.04.036.

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50

Maeda, Tatsuro, Wen Hsin Chang, Toshifumi Irisawa, Hiroyuki Ishii, Hiroshi Oka, Masashi Kurosawa, Yukihiro Imai, Osamu Nakatsuka, and Noriyuki Uchida. "Ultra-thin germanium-tin on insulator structure through direct bonding technique." Semiconductor Science and Technology 33, no. 12 (October 24, 2018): 124002. http://dx.doi.org/10.1088/1361-6641/aae620.

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