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Journal articles on the topic 'GeSbTe alloy'

Author: Grafiati

Published: 9 March 2023

Last updated: 31 July 2025

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1

Tominaga, Junji. "An engineering model for high-speed switching in GeSbTe phase-change memory." Applied Physics Express 15, no. 2 (2022): 025505. http://dx.doi.org/10.35848/1882-0786/ac4a11.

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Abstract Ge2Sb2Te5 is the most successful phase-change alloy in non-volatile memory using the amorphous-crystal phase transition. In deriving further high performance in switching, especially the transition speed from amorphous to crystal should still be modified. In this work, we examined an ideal Ge2Sb2Te5 alloy based on the Kolobov model using ab-initio molecular dynamics simulations. As a result, it was clear that a uniaxial exchange between vacancies and Ge atoms plays a crucial role in realizing high-speed switching and a large contrast in the resonance bonding state in the alloy. The va

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2

Rebora, Charles, Ruomeng Huang, Gabriela P. Kissling, et al. "Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy." Nanotechnology 30, no. 2 (2018): 025202. http://dx.doi.org/10.1088/1361-6528/aae6db.

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3

Liang-Cai, Wu, Liu Bo, Song Zhi-Tang, Feng Gao-Ming, Feng Song-Lin, and Chen Bomy. "Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy." Chinese Physics Letters 23, no. 9 (2006): 2557–59. http://dx.doi.org/10.1088/0256-307x/23/9/057.

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4

Chabli, A., C. Vergnaud, F. Bertin, et al. "Temperature dependence of structural and optical properties of GeSbTe alloy thin films." Journal of Magnetism and Magnetic Materials 249, no. 3 (2002): 509–12. http://dx.doi.org/10.1016/s0304-8853(02)00471-7.

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5

Wu, Liangcai, Xilin Zhou, Zhitang Song, et al. "197 Au irradiation study of phase-change memory cell with GeSbTe alloy." physica status solidi (a) 207, no. 10 (2010): 2395–98. http://dx.doi.org/10.1002/pssa.201026008.

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6

Abou El Kheir, Omar, and Marco Bernasconi. "High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories." Nanomaterials 11, no. 9 (2021): 2382. http://dx.doi.org/10.3390/nano11092382.

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Chalcogenide GeSbTe (GST) alloys are exploited as phase change materials in a variety of applications ranging from electronic non-volatile memories to neuromorphic and photonic devices. In most applications, the prototypical Ge2Sb2Te5 compound along the GeTe-Sb2Te3 pseudobinary line is used. Ge-rich GST alloys, off the pseudobinary tie-line with a crystallization temperature higher than that of Ge2Sb2Te5, are currently explored for embedded phase-change memories of interest for automotive applications. During crystallization, Ge-rich GST alloys undergo a phase separation into pure Ge and less

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7

Yimam, Daniel Tadesse, A. J. T. Van Der Ree, Omar Abou El Kheir, et al. "Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films." Nanomaterials 12, no. 10 (2022): 1717. http://dx.doi.org/10.3390/nano12101717.

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Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb2Te3 tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with outstanding properties is still ongoing. This search is relatively crucial for embedded memory applications where the crystallization temperature of the active material has to be higher to surpass the soldering threshold. Increasing the Ge content in the GST alloys seems promising due to the associated higher crystallization temperatures. Howev

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8

Kim, Sang Y., Sang J. Kim, Hun Seo, and Myong R. Kim. "Complex Refractive Indices of GeSbTe-Alloy Thin Films: Effect of Nitrogen Doping and Wavelength Dependence." Japanese Journal of Applied Physics 38, Part 1, No. 3B (1999): 1713–14. http://dx.doi.org/10.1143/jjap.38.1713.

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9

Nozaki, Hiroo, Yuji Ikeda, Kazuhide Ichikawa, and Akitomo Tachibana. "Electronic stress tensor analysis of molecules in gas phase of CVD process for gesbte alloy." Journal of Computational Chemistry 36, no. 16 (2015): 1240–51. http://dx.doi.org/10.1002/jcc.23920.

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10

Wu, Liangcai, Tao Li, Wanliang Liu, and Zhitang Song. "High-speed and large-window C-doped Sb-rich GeSbTe alloy for phase-change memory applications." Applied Physics Express 12, no. 12 (2019): 125006. http://dx.doi.org/10.7567/1882-0786/ab5312.

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11

Wang, Siyu, Tong Xing, Ping Hu, et al. "Optimized carrier concentration and enhanced thermoelectric properties in GeSb_4-xBi_xTe₇ materials." Applied Physics Letters 121, no. 21 (2022): 213902. http://dx.doi.org/10.1063/5.0123298.

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As the pseudo-binary alloys between GeTe and Sb2Te3, GeSbTe-based compounds are promising thermoelectric materials. Although Ge2Sb2Te5 and GeSb2Te4 have widely been studied, the thermoelectric properties of GeSb4Te7 have not been well understood yet. In this work, we design a series of GeSb4- xBi xTe7 solid solutions and systematically study the variation in the crystal structure, electrical, and thermal transport properties. Alloying Bi effectively reduces the carrier concentration and, thus, enhances the Seebeck coefficient. Meanwhile, the thermal conductivity is greatly reduced via large ma

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12

Goffart, Ludovic, Christophe Vallée, Gabriele Navarro, Jean-Philippe Reynard, Bernard Pelissier, and Gauthier Lefèvre. "Oxidation Process in Ge-Rich GeSbTe Alloy for Phase-Change Memory: Mechanism, Kinetic and N-Doping Influence." ECS Meeting Abstracts MA2020-02, no. 14 (2020): 1358. http://dx.doi.org/10.1149/ma2020-02141358mtgabs.

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13

Chèze, Caroline, Flavia Righi Riva, Giulia Di Bella, et al. "Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys." Nanomaterials 12, no. 6 (2022): 1007. http://dx.doi.org/10.3390/nano12061007.

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In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physical vapor deposition on Sb2Te3 and on Ge2Sb2Te5 layers. The two heterostructures were characterized in situ by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS) during the formation of the interface between the first and the second layer (top GGST film). The evolution of the composition across the heterostructure interface and informa

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14

Cecchi, Stefano, Iñaki Lopez Garcia, Antonio M. Mio, et al. "Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys." Nanomaterials 12, no. 4 (2022): 631. http://dx.doi.org/10.3390/nano12040631.

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Enrichment of GeSbTe alloys with germanium has been proposed as a valid approach to increase the crystallization temperature and therefore to address high-temperature applications of non-volatile phase change memories, such as embedded or automotive applications. However, the tendency of Ge-rich GeSbTe alloys to decompose with the segregation of pure Ge still calls for investigations on the basic mechanisms leading to element diffusion and compositional variations. With the purpose of identifying some possible routes to limit the Ge segregation, in this study, we investigate Ge-rich Sb2Te3 and

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15

Talochkin, A. B., K. A. Kokh, and O. E. Tereshchenko. "Optical phonons of GeSbTe alloys: Influence of structural disorder." Journal of Alloys and Compounds 942 (May 2023): 169122. http://dx.doi.org/10.1016/j.jallcom.2023.169122.

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16

Prazakova, L., E. Nolot, E. Martinez, et al. "Spectroscopic study of nitrogen incorporation in Ge, Sb, and Te elemental systems: A step toward the understanding of nitrogen effect in phase-change materials." Journal of Applied Physics 132, no. 20 (2022): 205102. http://dx.doi.org/10.1063/5.0117596.

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Nitrogen doping in chalcogenide materials represents a promising way for the improvement of material properties. Indeed, N doping in GeSbTe phase-change alloys have demonstrated to greatly enhance thermal stability of their amorphous phase, necessary to ensure the data retention of the final phase-change memory device. Although it is suggested that the N doping in such alloys leads to the preferential formation of Ge-N bonds, further questions concerning the bonding, in particular, Sb-N and Te-N, and the structural arrangement remain unclear. In this paper, we present a study of as-deposited e

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17

Bourgine, Adrien, Jérémie Grisolia, Maxime Vallet, et al. "On the charge transport mechanisms in Ge-rich GeSbTe alloys." Solid-State Electronics 172 (October 2020): 107871. http://dx.doi.org/10.1016/j.sse.2020.107871.

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18

Morales-Sánchez, E., E. F. Prokhorov, J. González-Hernández, and A. Mendoza-Galván. "Structural, electric and kinetic parameters of ternary alloys of GeSbTe." Thin Solid Films 471, no. 1-2 (2005): 243–47. http://dx.doi.org/10.1016/j.tsf.2004.06.141.

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19

Gabardi, S., S. Caravati, M. Bernasconi, and M. Parrinello. "Density functional simulations of Sb-rich GeSbTe phase change alloys." Journal of Physics: Condensed Matter 24, no. 38 (2012): 385803. http://dx.doi.org/10.1088/0953-8984/24/38/385803.

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20

Robertson, John. "Silicon versus the rest." Canadian Journal of Physics 92, no. 7/8 (2014): 553–60. http://dx.doi.org/10.1139/cjp-2013-0543.

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We review the material properties that allowed amorphous silicon to become the dominant large area semiconductor and then point out how amorphous oxide semiconductors could displace a-Si in thin film transistors, and how phase change materials, such as GeSbTe alloys, have provided an optical storage technology and will provide a nonvolatile electrical storage technology based on their unique properties.

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21

Tominaga, Junji, and Leonid Bolotov. "Re-amorphization of GeSbTe alloys not through a melt-quenching process." Applied Physics Express 12, no. 1 (2018): 015504. http://dx.doi.org/10.7567/1882-0786/aaed9d.

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22

Agati, Marta, Maxime Vallet, Sébastien Joulié, Daniel Benoit, and Alain Claverie. "Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys." Journal of Materials Chemistry C 7, no. 28 (2019): 8720–29. http://dx.doi.org/10.1039/c9tc02302j.

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23

Jeynes, C., E. Nolot, C. Costa, et al. "Quantifying nitrogen in GeSbTe:N alloys." Journal of Analytical Atomic Spectrometry 35, no. 4 (2020): 701–12. http://dx.doi.org/10.1039/c9ja00382g.

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24

Newby, RE, S. Muhamed, S. Smith, JE Alty, S. Jamieson, and PA Kempster. "P68 Activation of the geste antagoniste improves speed of finger tapping in organic and functional dystonia." Journal of Neurology, Neurosurgery & Psychiatry 90, no. 3 (2019): e40.3-e40. http://dx.doi.org/10.1136/jnnp-2019-abn.130.

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ObjectivesThe geste antagoniste is a typical feature of dystonia’s motor phenomenology. Gestes may also occur in functional dystonia. We investigated how gestes affect the kinematics of voluntary movement.DesignCross-sectional study.SubjectsTwenty-three patients with organic dystonia and three with functional dystonia were studied.MethodsFinger tapping was assessed while subjects wore electromagnetic sensors secured to index finger and thumb. Subjects were instructed to tap ‘as fast and as big as possible’ for 15 s, first with and then without activation of their geste. Precise position and or

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25

Prazakova, L., E. Nolot, E. Martinez, et al. "Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping." Journal of Applied Physics 128, no. 21 (2020): 215102. http://dx.doi.org/10.1063/5.0027734.

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26

Bragaglia, Valeria, Fabrizio Arciprete, Antonio M. Mio, and Raffaella Calarco. "Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering." Journal of Applied Physics 123, no. 21 (2018): 215304. http://dx.doi.org/10.1063/1.5024047.

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27

D’Arrigo, G., A. M. Mio, M. Boniardi, et al. "Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis." Materials Science in Semiconductor Processing 65 (July 2017): 100–107. http://dx.doi.org/10.1016/j.mssp.2016.07.014.

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28

Bogenschutz, Victor, Emmanuel Nolot, Oumaima Daoudi, et al. "Stoichiometry Tuning of the Crystallized Ge-Sb-Te Phase in Ge-Rich Ge-Sb-Te Thin Films By Dopant Introduction." ECS Meeting Abstracts MA2025-01, no. 31 (2025): 1586. https://doi.org/10.1149/ma2025-01311586mtgabs.

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Among the phase change materials, Ge2Sb2Te5 is considered the reference material for phase change memories [1]. However, it has a low crystallization temperature close to 150°C, which makes it unsuitable for applications where high thermal stability is required. To meet more stringent requirements of dedicated applications such as automotive, solutions to increase the crystallization temperature have been explored, such as Ge enrichment [2], light element doping or exploration of new compounds. In this work, we demonstrate the possibility of controlling the stoichiometry of the segregated GeSb

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29

Kaur, Jashangeet, Ankush Parmar, S. K. Tripathi, and Navdeep Goyal. "Optical Study of Ge1Sb2Te4 and GeSbTe thin films." Materials Research Express 6, no. 4 (2019): 046417. http://dx.doi.org/10.1088/2053-1591/aafc03.

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30

Luckas, J., A. Piarristeguy, G. Bruns, et al. "Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys." Journal of Applied Physics 113, no. 2 (2013): 023704. http://dx.doi.org/10.1063/1.4769871.

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31

Rosnay, Joël de. "L’avenir de l’écologie : une pensée globale, un geste local." Revue française d'administration publique 53, no. 1 (1990): 7–11. http://dx.doi.org/10.3406/rfap.1990.2310.

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The Future of Ecology : Global Thinking, Local Action. The ecological approach is founded on a global view of our planet as a System and on an awareness of the fact that the earth’s resources are being plundered by man. It also presupposes a new way of thinking whereby informed and environmentally aware citizens would allow their behaviour to be influenced by ecological considerations.

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32

Prazakova, L., E. Nolot, E. Martinez, et al. "The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature." Materialia 21 (March 2022): 101345. http://dx.doi.org/10.1016/j.mtla.2022.101345.

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33

Luong, Minh Anh, Eloïse Rahier, Sijia Ran, and Alain Claverie. "Identification of the phases resulting from the thermal crystallization of Ge-rich GeSbTe alloys using EELS." BIO Web of Conferences 129 (2024): 24029. http://dx.doi.org/10.1051/bioconf/202412924029.

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34

Luong, Minh Anh, Marta Agati, Nicolas Ratel Ramond, et al. "On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications." physica status solidi (RRL) – Rapid Research Letters 15, no. 3 (2021): 2170015. http://dx.doi.org/10.1002/pssr.202170015.

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35

Goffart, Ludovic, Bernard Pelissier, Gauthier Lefèvre, et al. "Surface oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications." Applied Surface Science 573 (January 2022): 151514. http://dx.doi.org/10.1016/j.apsusc.2021.151514.

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36

Blachowicz, T., M. G. Beghi, G. Güntherodt, B. Beschoten, H. Dieker, and M. Wuttig. "Crystalline phases in the GeSb2Te4 alloy system: Phase transitions and elastic properties." Journal of Applied Physics 102, no. 9 (2007): 093519. http://dx.doi.org/10.1063/1.2809355.

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37

Kumar, Sanjay, and Vineet Sharma. "Structural transition on doping rare earth Sm to GeSbTe phase change material." Journal of Alloys and Compounds 877 (October 2021): 160246. http://dx.doi.org/10.1016/j.jallcom.2021.160246.

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38

Zhou, J., Z. Sun, Y. Pan, Z. Song, and R. Ahuja. "Vacancy or not: An insight on the intrinsic vacancies in rocksalt-structured GeSbTe alloys from ab initio calculations." EPL (Europhysics Letters) 95, no. 2 (2011): 27002. http://dx.doi.org/10.1209/0295-5075/95/27002.

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39

FU, Yong-zhong. "Influence of sputtering parameters on microstructure and mechanical properties of GeSbTe films." Transactions of Nonferrous Metals Society of China 18, no. 1 (2008): 167–70. http://dx.doi.org/10.1016/s1003-6326(08)60030-8.

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40

Cil, K., Y. Zhu, J. Li, C. H. Lam, and H. Silva. "Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride." Thin Solid Films 536 (June 2013): 216–19. http://dx.doi.org/10.1016/j.tsf.2013.03.087.

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41

Marcenaro, Simone. "«Filologia e cultura epica: il caso dei trobadores»." Revista de Literatura Medieval 30 (December 31, 2018): 13–28. http://dx.doi.org/10.37536/rpm.2018.30.0.74043.

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Resumen: Alcune cantigas de escarnio e maldizer del trovatore galego-portoghese Fernan Soarez de Quinhones alludono, in forma parodica e burlesca, alla letteratura epica, sia attraverso l’uso di forme e stilemi propri del genere, sia attraverso una rete di rimandi intertestuali. L’analisi e lo studio dei possibili intertesti utilizzati dal trovatore per le sue canzoni satiriche possono dirci qualcosa di più in merito alla cultura letteraria del circolo di autori che si riunirono alla corte del futuro Alfonso X, ancora infante, nel quarto decennio del xiii secolo; allo stesso tempo, sarà possib

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42

Nedelcu, Nicoleta, Veturia Chiroiu, Ligia Munteanu, and Iulian Girip. "On the optical nonlinearity in the GeSbSe chalcogenide glasses." Materials Research Express 7, no. 6 (2020): 066403. http://dx.doi.org/10.1088/2053-1591/ab97e3.

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43

Kumar, Sanjay, and Vineet Sharma. "Improvement in thermal stability and crystallization mechanism of Sm doped GeSbTe thin films for phase change memory applications." Journal of Alloys and Compounds 893 (February 2022): 162316. http://dx.doi.org/10.1016/j.jallcom.2021.162316.

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44

Rachwalska von Rejchwald, Jolanta. "Un geste fantôme du président. Reconfigurations dans les rapports entre l’État laïc et la religion dans l’ère post-séculière." Romanica Wratislaviensia 66 (October 4, 2019): 133–46. http://dx.doi.org/10.19195/0557-2665.66.11.

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THE PRESIDENT’S PHANTOM GESTURE: RECONFIGURATIONS BETWEEN A SECULAR STATE AND RELIGION IN TIMES OF POST-SECULARISM The personal attitude of the successive presidents of the Fifth Republic of France to religion, although different, did not violate the general principle of the secularity of the state. Meanwhile, the ambiguity of some gestures of president Emmanuel Macron, visible during the funeral ceremony of Johnny Hallyday, sparked protests among the laicity defenders, especially since it fell exactly on the anniversary of the 1905 law on the separation of Churches from the State. Is it possi

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45

Peng, H. K., K. Cil, A. Gokirmak, et al. "Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride." Thin Solid Films 520, no. 7 (2012): 2976–78. http://dx.doi.org/10.1016/j.tsf.2011.11.033.

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46

Abd El-Wahabb, E., M. M. Abd El-Aziz, E. R. Sharf, and M. A. Afifi. "Devitrification behavior and some electrical properties of GeSeTl chalcogenide glass." Journal of Alloys and Compounds 509, no. 5 (2011): 1749–55. http://dx.doi.org/10.1016/j.jallcom.2010.10.033.

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47

Wang, Guanjie, Jian Zhou, Stephen R. Elliott, and Zhimei Sun. "Role of carbon-rings in polycrystalline GeSb2Te4 phase-change material." Journal of Alloys and Compounds 782 (April 2019): 852–58. http://dx.doi.org/10.1016/j.jallcom.2018.12.228.

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48

Ruczkowski, Piotr. "Administracyjnoprawny tryb zmiany nazwiska w Niemczech (Öffentlich-rechtliche Namensänderung in Deutschland) – wybrane zagadnienia proceduralne i materialnoprawne." Opolskie Studia Administracyjno-Prawne 16, no. 1 (4) (2019): 47–59. http://dx.doi.org/10.25167/osap.1159.

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The article analyzes selected legal provisions related to administrative and legal procedures of changing the surname in Germany. It is worth emphasizing that the same provisions apply to changing first names. The issue of adopting new surnames and first names and their changes in Germany is regulated first of all by civil law provisions and, to be more precise, by family law provisions which are closely related to the existing family relationships and blood relationships. Legislators have also provided for a possibility of changing surnames and names through administrative and legal procedure

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49

Petkov, P., C. Vodenicharov, and S. Parvanov. "Electrode-limited currents in Al-(GeSeTl)-Al thin films." Thin Solid Films 259, no. 2 (1995): 270–74. http://dx.doi.org/10.1016/0040-6090(94)06407-5.

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50

Cissewski, Julia, and Christophe Boesch. "Communication without language." Gesture 15, no. 2 (2016): 224–49. http://dx.doi.org/10.1075/gest.15.2.04cis.

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Great apes do not possess language or any comparable system of symbolic communication. Yet they communicate intentionally and possess cognitive competencies like categorization and decontextualization. These provide the basis for mental concepts and the meaning side of linguistic symbols. The arbitrarily linked and conventionalized forms for expressing these meanings, however, seem to be largely missing. We propose two strategies that may allow great apes to communicate a wide array of meanings without creating numerous arbitrarily linked forms. First, we suggest the existence of ‘population-s

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