Relevant bibliographies by topics / GFET

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'GFET'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "GFET"

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Safari, Ali, Massoud Dousti, and Mohammad Bagher Tavakoli. "Distributed Amplifier Based on Monolayer Graphene Field Effect Transistor." Journal of Circuits, Systems and Computers 28, no. 14 (February 25, 2019): 1950231. http://dx.doi.org/10.1142/s0218126619502311.

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Due to the ultra-high carrier mobility and ultralow resistivity of Graphene channel, a Graphene field effect transistor (GFET) is an interesting candidate for future RF and microwave electronics. In this paper, the introduction and review of existing compact circuit-level model of GFETs are presented. A compact GFET model based on drift-diffusion transport theory is then implemented in Verilog-A for RF/microwave circuit analysis. Finally, the GFET model is used to design a GFET-based distributed amplifier (DA) using advanced design system (ADS) tools. The simulation results demonstrate a gain of 8[Formula: see text]dB, an input/output return loss less than [Formula: see text]10[Formula: see text]dB, [Formula: see text]3[Formula: see text]dB bandwidth from DC up to 5[Formula: see text]GHz and a dissipation of about 60.45[Formula: see text]mW for a 1.5[Formula: see text]V power supply. The main performance characteristics of the distributed amplifier are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.
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Jmai, Bassem, Vitor Silva, and Paulo M. Mendes. "2D Electronics Based on Graphene Field Effect Transistors: Tutorial for Modelling and Simulation." Micromachines 12, no. 8 (August 18, 2021): 979. http://dx.doi.org/10.3390/mi12080979.

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This paper provides modeling and simulation insights into field-effect transistors based on graphene (GFET), focusing on the devices’ architecture with regards to the position of the gate (top-gated graphene transistors, back-gated graphene transistors, and top-/back-gated graphene transistors), substrate (silicon, silicon carbide, and quartz/glass), and the graphene growth (CVD, CVD on SiC, and mechanical exfoliation). These aspects are explored and discussed in order to facilitate the selection of the appropriate topology for system-level design, based on the most common topologies. Since most of the GFET models reported in the literature are complex and hard to understand, a model of a GFET was implemented and made available in MATLAB, Verilog in Cadence, and VHDL-AMS in Simplorer—useful tools for circuit designers with different backgrounds. A tutorial is presented, enabling the researchers to easily implement the model to predict the performance of their devices. In short, this paper aims to provide the initial knowledge and tools for researchers willing to use GFETs in their designs at the system level, who are looking to implement an initial setup that allows the inclusion of the performance of GFETs.
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Toral-Lopez, Alejandro, Enrique G. Marin, Francisco Pasadas, Jose Maria Gonzalez-Medina, Francisco G. Ruiz, David Jiménez, and Andres Godoy. "GFET Asymmetric Transfer Response Analysis through Access Region Resistances." Nanomaterials 9, no. 7 (July 18, 2019): 1027. http://dx.doi.org/10.3390/nano9071027.

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Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. Here, we analyse in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i.e., by the influence of a back gate) and the presence of imperfections in the graphene layer (e.g., charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by evaluating their cut-off frequency.
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Sri Selvarajan, Reena, Azrul Azlan Hamzah, Norliana Yusof, and Burhanuddin Yeop Majlis. "Channel length scaling and electrical characterization of graphene field effect transistor (GFET)." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (August 1, 2019): 697. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp697-703.

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<p>The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation technique using Lumerical DEVICE software. The performance was analyzed based on electrical characterization of GFET with long and short conducting channels. It proves that conducting channel lengths have vast effect on ambipolar curve where short channel induces asymmetry in transfer characteristics curve where the n-branch is suppressed. Whereas for output characteristics, the performance of GFET heavily degraded as the channel length is reduced in short channels of GFET. Therefore, channel length scaling is a vital parameter in determining the performance of GFET in various fields, particularly in biosensing applications for ultrasensitive detection.</p>
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Xiao, Xiang-Jie, Piao-Rong Xu, Gen-Hua Liu, Hui-Ying Zhou, Jian-Jun Li, Ai-Bin Chen, Yong-Zhong Zhang, and Hong-Xu Huang. "A numerical model of electrical characteristics for the monolayer graphene field effect transistors." European Physical Journal Applied Physics 86, no. 3 (June 2019): 30101. http://dx.doi.org/10.1051/epjap/2019190124.

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A numerical model of carrier saturation velocity and drain current for the monolayer graphene field effect transistors (GFETs) is proposed by considering the exponential distribution of potential fluctuations in disordered graphene system. The carrier saturation velocity of GFET is investigated by the two-region model, and it is found to be affected not only by the carrier density, but also by the graphene disorder. The numerical solutions of the carrier density and carrier saturation velocity in the disordered GFETs yield clear and physical-based results. The simulated results of the drain current model show good consistency with the reported experimental data.
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Nastasi, Giovanni, and Vittorio Romano. "An Efficient GFET Structure." IEEE Transactions on Electron Devices 68, no. 9 (September 2021): 4729–34. http://dx.doi.org/10.1109/ted.2021.3096492.

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Bungon, Theodore, Carrie Haslam, Samar Damiati, Benjamin O’Driscoll, Toby Whitley, Paul Davey, Giuliano Siligardi, Jerome Charmet, and Shakil A. Awan. "Graphene FET Sensors for Alzheimer’s Disease Protein Biomarker Clusterin Detection." Proceedings 60, no. 1 (November 5, 2020): 14. http://dx.doi.org/10.3390/iecb2020-07229.

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We report on the fabrication and characterisation of Graphene field-effect transistor (GFET) Biosensors for detecting clusterin, a prominent protein biomarker of Alzheimer’s disease (AD). There are approximately 54 million people currently living with dementia worldwide and this is expected to rise to 130 million by 2050. Although there are over 400 different types of dementia, AD is the most common type, affecting between 50–75% of those diagnosed with dementia. Diagnosis of AD can take up to 2 years currently using MRI, PET, CT scans and memory tests. There is, therefore, an urgent need to develop low-cost, accurate, non-invasive and point-of-care (PoC) sensors for early diagnosis of AD. The GFET sensors we are developing to address this challenge were fabricated on Si/SiO2 substrate through processes of photolithographic patterning and metal lift-off techniques with evaporated chromium and sputtered gold contacts. Raman Spectroscopy was performed on the devices to determine the quality of the graphene. The GFETs were annealed to improve their performance before the channels were functionalized by immobilising the graphene surface with a linker molecule and anti-clusterin antibody. The detection was achieved through the binding reaction between the antibody and varying concentrations of clusterin antigen from 1 pg/mL to 1 ng/mL. The GFETs were characterized using 4-probe direct current (DC) electrical measurements which demonstrated a limit of detection of the biosensors to be below 1 pg/mL.
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Li, Fang, Zhongrong Wang, and Yunfang Jia. "Reduced Carboxylate Graphene Oxide based Field Effect Transistor as Pb2+ Aptamer Sensor." Micromachines 10, no. 6 (June 11, 2019): 388. http://dx.doi.org/10.3390/mi10060388.

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Aptamer functionalized graphene field effect transistor (apta-GFET) is a versatile bio-sensing platform. However, the chemical inertness of graphene is still an obstacle for its large-scale applications and commercialization. In this work, reduced carboxyl-graphene oxide (rGO-COOH) is studied as a self-activated channel material in the screen-printed apta-GFETs for the first time. Examinations are carefully executed using lead-specific-aptamer as a proof-of-concept to demonstrate its functions in accommodating aptamer bio-probes and promoting the sensing reaction. The graphene-state, few-layer nano-structure, plenty of oxygen-containing groups and enhanced LSA immobilization of the rGO-COOH channel film are evidenced by X-ray photoelectron spectroscopy, Raman spectrum, UV-visible absorbance, atomic force microscopy and scanning electron microscope. Based on these characterizations, as well as a site-binding model based on solution-gated field effect transistor (SgFET) working principle, theoretical deductions for rGO-COOH enhanced apta-GFETs’ response are provided. Furthermore, detections for disturbing ions and real samples demonstrate the rGO-COOH channeled apta-GFET has a good specificity, a limit-of-detection of 0.001 ppb, and is in agreement with the conventional inductively coupled plasma mass spectrometry method. In conclusion, the careful examinations demonstrate rGO-COOH is a promising candidate as a self-activated channel material because of its merits of being independent of linking reagents, free from polymer residue and compatible with rapidly developed print-electronic technology.
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Akbari, Moaazameh, Mehdi Jafari Shahbazzadeh, Luigi La Spada, and Alimorad Khajehzadeh. "The Graphene Field Effect Transistor Modeling Based on an Optimized Ambipolar Virtual Source Model for DNA Detection." Applied Sciences 11, no. 17 (August 31, 2021): 8114. http://dx.doi.org/10.3390/app11178114.

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The graphene-based Field Effect Transistors (GFETs), due to their multi-parameter characteristics, are growing rapidly as an important detection component for the apt detection of disease biomarkers, such as DNA, in clinical diagnostics and biomedical research laboratories. In this paper, the non-equilibrium Green function (NEGF) is used to create a compact model of GFET in the ballistic regime as an important building block for DNA detection sensors. In the proposed method, the self-consistent solutions of two-dimensional Poisson’s equation and NEGF, using the nearest neighbor tight-binding approach on honeycomb lattice structure of graphene, are modeled as an efficient numerical method. Then, the eight parameters of the phenomenological ambipolar virtual source (AVS) circuit model are calibrated by a least-square curve-fitting routine optimization algorithm with NEGF transfer function data. At last, some parameters of AVS that are affected by induced charge and potential of DNA biomolecules are optimized by an experimental dataset. The new compact model response, with an acceptable computational complexity, shows a good agreement with experimental data in reaction with DNA and can effectively be used in the plan and investigation of GFET biosensors.
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Behera, S., S. R. Pattanaik, and G. Dash. "Contact Resistance Induced Variability in Graphene Field Effect Transistors." Journal of Scientific Research 13, no. 1 (January 1, 2021): 153–63. http://dx.doi.org/10.3329/jsr.v13i1.48948.

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The success of the graphene field-effect transistor (GFET) is primarily based on solving the problems associated with the growth and transfer of high-quality graphene, the deposition of dielectrics and contact resistance. The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. This is because process variability is inherent in semiconductor device manufacturing. Two units, even manufactured in the same batch, never show identical characteristics. Therefore, it is imperative that the effect of variability be studied with a view to obtain equivalent performance from similar devices. In this study, we undertake the variability of source and drain contact resistances and their effects on the performance of GFET. For this we have used a simulation method developed by us. The results show that the DC characteristics of GFET are highly dependent on the channel resistance. Also the ambipolar characteristics are strongly affected by the variation of source and drain resistances. We have captured their impact on the output as well as transfer characteristics of a dual gate GFET.
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Dissertations / Theses on the topic "GFET"

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Williams, Adrienne Dee. "DNA-Nucleobase Guanine as Passivation/Gate Dielectric Layer for Flexible GFET-Based Sensor Applications." Wright State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=wright1440775088.

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Mele, David. "Développement de dispositifs à base de graphène pour des applications hautes fréquences." Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10026/document.

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Les propriétés électriques et mécaniques exceptionnelles du graphène font de ce matériau bidimensionnel à base de carbone, l’un des matériaux phare de la micro-électronique. L’objectif des ces travaux de recherche est de démontrer les possibilités nouvelles offertes par le graphène dans le domaine des transistors ultra-rapides et faible bruit. La fabrication de transistors RF a été réalisée sur des échantillons obtenus par graphitisation de substrat SiC. Ce travail s’est déroulé dans le cadre du projet ANR MIGRAQUEL, en partenariat avec le Laboratoire de Photonique et de Nanostructures (LPN), le Laboratoire Pierre Aigrain (LPA) de l’ENS, et l’Institut d’Electronique Fondamentale (IEF). Les couches de graphène utilisées dans cette thèse ont été synthétisées au LPN. Le développement et l’optimisation des différents procédés technologiques se sont déroulés en salle blanche. Les propriétés du matériau tels que la mobilité, la résistance par carré, ainsi que certaines caractéristiques technologiques comme les résistances de contact sont déduites de structures spécifiques. Ensuite, des caractérisations électriques en régime statique et dynamique effectuées sur des transistors graphène à effet de champ (GFET) ont été effectuées. Les meilleures performances hyperfréquence ont été obtenues sur des transistors à base de nano-rubans de graphène (GNRFET), avec une fréquence de coupure « intrinsèque » du gain en courant ft_intr=50GHz et une fréquence maximale d’oscillation fmax=29GHz; et ce pour une longueur de grille de Lg=75nm à Vds=300mV
Outstanding electrical and mechanical properties of graphene make this two-dimensional carbon-based material, one of the leading microelectronics materials. The aim of this thesis is to demonstrate the new possibilities offered by graphene in the field of high-speed and low-noise transistors. RF transistors have been produced on samples obtained by graphitization of SiC substrates. This was possible through the ANR program MIGRAQUEL in partnership with the Laboratory of Photonics and Nanostructures (LPN), the Pierre Aigrain Laboratory (LPA) of ENS and the Institute of Fundamental Electronics (IEF). Graphene samples used in this thesis were synthesized in LPN. The development and optimization of the different technological steps process took place in clean-rooms. Material properties such as mobility, sheet resistance and some technological parameters such as contact resistance are made using specific samples. Then, each GFET and GNRFET (Graphene Nano-Ribbons FET) transistor were analyzed both in static and high-frequency regime. Finally, the best RF measurement in terms of intrinsisc current gain cut-off frequency and maximum oscillation frequency are respectively fr_intr=50GHz and fmax=29GHz; for a gate length of Lg=75nm at Vds=300mV
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Anttila-Eriksson, Mikael. "Electrical Characterizationon Commercially Available Chemical Vapor Deposition (CVD) Graphene." Thesis, Uppsala universitet, Tillämpad materialvetenskap, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-298357.

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Field-effect transistors (FET) based on graphene as channel has extraordinaryproperties in terms of charge mobility, charge carrier density etc. However, there aremany challenges to graphene based FET due to the fact graphene is a monolayer ofatoms in 2-dimentional space that is strongly influenced by the operating conditions.One issue is that the Dirac point, or K-point, shifts to higher gate voltage whengraphene is exposed to atmosphere. In this study graphene field-effect transistors(GFET) based on commercially available CVD graphene are electrically characterizedthrough field effect gated measurements. The Dirac point is initially unobservable andlocated at higher gate voltages (>+42 V), indicating high p-doping in graphene.Different treatments are tried to enhance the properties of GFET devices, such astransconductance, mobility and a decrease of the Dirac point to lower voltages, thatincludes current annealing, vacuum annealing, hot plate annealing, ionized water bathand UV-ozone cleaning. Vacuum annealing and annealing on a hot plate affect thegated response; they might have decreased the overall p-doping, but also introducedDirac points and non-linear features. These are thought to be explained by localp-doping of the graphene under the electrodes. Thus the Dirac point of CVDgraphene is still at higher gate voltages. Finally, the charge carrier mobility decreasedin all treatments except current – and hot plate annealing, and it is also observed that charge carrier mobilities after fabrication are lower than the manufacturer estimatesfor raw graphene on SiO2/Si substrate.
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Goswami, Tushar. "Chondroitin Sulfate Hydrogels for Total Wound Care Devices." Wright State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=wright1578587475393225.

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Belhaj, Mohamed Moez. "Conception et caractérisation des dispositifs micro-ondes pour la fabrication de circuits à base de graphène." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10048/document.

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Ce travail a été réalisé dans le cadre du projet GRACY regroupant l’IEMN et d’autres laboratoires de recherche : CALISTO et IMS Bordeaux. Ce manuscrit fait état d’une synthèse exhaustive des études et avancées menées dans le cadre de ce travail de thèse au sein de l’Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) dans le groupe CARBON. Le principal axe de réflexion de ce travail repose sur la conception, la modélisation et la caractérisation des dispositifs actifs et passifs sur substrat souples et rigides en vue du développement de nouveaux composants et de circuits électroniques avec des critères de performances de plus en plus importants. Au cours de ce travail, l’accent a été principalement portée sur les étapes essentielles à la réalisation de circuit intégré en ondes millimétriques utilisant la technologie coplanaire en impression jet d’encre et les transistors à effet de champ à base de graphène (GFETs). Ce mémoire montre en particulier l’intérêt et les potentialités du graphène pour son intégration au sein des circuits électroniques. De plus, une attention particulière a été portée sur la modélisation et les techniques de caractérisations relatives aux dispositifs passifs sur substrat souple. Par conséquent, un banc de caractérisation de ces éléments sur substrat flexibles a été développé au cours de cette thèse afin de vérifier et consolider expérimentalement leurs comportements
This work was carried out under the project involving GRACY IEMN and other research laboratories: CALISTO and IMS Bordeaux. This manuscript reports a comprehensive overview of studies and advanced conducted as part of this thesis in the Institute of Electronics, Microelectronics and Nanotechnology (IEMN) in CARBON group. The main reflection axis of this work is based on the design, modeling and characterization of active and passive devices on flexible and rigid substrates for the development of new components and electronic circuits with increasingly important performance criteria. During this work, the focus was mainly focused on the essential steps to achieving integrated circuit millimeter wave using coplanar technology by inkjet printing and field effect transistors based on graphene (GFETs). This memory in particular shows the importance and potential of graphene for integration into electronic circuits. In addition, special attention was paid on modeling and characterization techniques related to passive devices on flexible substrates. Therefore, a characterization bench of these elements on flexible substrate has been developed during this thesis to verify and consolidate their behavior experimentally
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Wei, Wei. "Process technologies for graphene-based high frequency flexible electronics." Thesis, Lille 1, 2015. http://www.theses.fr/2015LIL10161/document.

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L’électronique flexible est une thématique en plein essor, et impacte de nombreux secteurs applicatifs. L’objectif de cette thèse est de développer des composants sur substrats flexibles, pour des applications dans le domaine des radiofréquences. Elle est constituée de deux grandes parties : (i) la fabrication de composants passifs RF en utilisant la technologie d’impression par jet d’encre ; (ii) la fabrication de transistors graphène sur substrats flexibles. Ces travaux sont partiellement intégrés au projet Européen flagship GRAPHENE, et au projet ANR GRACY. La technique d’impression jet d’encre est particulièrement adaptée à la fabrication de composants sur substrats flexibles. L’un des challenges de cette approche technologique est de pouvoir atteindre une définition et une résolution adaptée au fonctionnement en régime radiofréquence. Le travail mené dans cette thèse a permis de réaliser des lignes homogènes de largeur minimale de 50 µm, et une résolution (distance entre 2 lignes de l’ordre de 15 µm. Différents composants passifs ont été fabriqués et caractérisés avec succès, et ce même en appliquant des contraintes en flexion aux dispositifs.Nous avons également développé et optimiser un procédé technologique, adapté à la fabrication de transistors à effet de champ à base de graphène (GFET), sur substrat flexible. Ce procédé présente un bilan thermique faible, et est basé sur l’utilisation d’une grille arrière à base d’aluminium dont l’oxyde naturel sert d’oxyde de grille. De nombreux transistors ont été fabriqués sur substrat kapton, et avec un bon rendement. Les meilleures performances en termes de fréquence de coupure du gain en courant (ft=39 GHz) et la fréquence maximale d’oscillation (fmax=13GHz) ont été mesurées sur un transistor de longueurs de grille Lg=100 nm et un développement de 12µm. Cette performance est à l’état de l’art de GFET flexibles. Ces performances sont conservées pour des contraintes atteignant 0,5%
Flexible electronic has drawn growing attentions for past several years due to its largely potential applications. The objective of my PhD work is to develop devices based on flexible substrate, for RF applications. There are mainly two parts involved: (i) fabrication of passive devices (transmission lines, antenna, etc) using inkjet printing technology; (ii) fabrication of graphene field effect transistors on flexible substrate using graphene growth by CVD technique. This work is partially involved in the European Flagship program GRAPHENE, and the ANR program GRACY. Inkjet printing is a promising fabrication technology for flexible electronics. The challenge of this technology is the quality and reliability of printed patterns in terms of geometry. Based on optimized printing parameters, the structures of coplanar wave guide (CPW) transmission lines with nice printing quality were realized (definition of 50 µm, resolution down to 20 µm). The RF characterization of these transmission lines combining the considerations of geometric dimensions, sintering temperature, and substrate bending are presented. The outstanding electrical and mechanical properties make graphene suitable for flexible transistors. In this thesis, we have developed and optimized a new low temperature process based on back-gated structure either on rigid substrate than on flexible substrate (here kapton). From flexible transistors, we report as measured current gain cut-off frequency ( ft-DUT ,without any de-embedding) of 39 GHz and maximum oscillation frequency (fmax) of 13 GHz in devices with 100 nm gate length and 12 µm gate width. This result is at the level of the state of art for flexible GFETs
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Smith, Anderson. "Graphene-based Devices for More than Moore Applications." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-188134.

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Moore's law has defined the semiconductor industry for the past 50 years. Devices continue to become smaller and increasingly integrated into the world around us. Beginning with personal computers, devices have become integrated into watches, phones, cars, clothing and tablets among other things. These devices have expanded in their functionality as well as their ability to communicate with each other through the internet. Further, devices have increasingly been required to have diverse of functionality. This combination of smaller devices coupled with diversification of device functionality has become known as more than Moore. In this thesis, more than Moore applications of graphene are explored in-depth. Graphene was discovered experimentally in 2004 and since then has fueled tremendous research into its various potential applications. Graphene is a desirable candidate for many applications because of its impressive electronic and mechanical properties. It is stronger than steel, the thinnest known material, and has high electrical conductivity and mobility. In this thesis, the potentials of graphene are examined for pressure sensors, humidity sensors and transistors. Through the course of this work, high sensitivity graphene pressure sensors are developed. These sensors are orders of magnitude more sensitive than competing technologies such as silicon nanowires and carbon nanotubes. Further, these devices are small and can be scaled aggressively. Research into these pressure sensors is then expanded to an exploration of graphene's gas sensing properties -- culminating in a comprehensive investigation of graphene-based humidity sensors. These sensors have rapid response and recovery times over a wide humidity range. Further, these devices can be integrated into CMOS processes back end of the line. In addition to CMOS Integration of these devices, a wafer scale fabrication process flow is established. Both humidity sensors and graphene-based transistors are successfully fabricated on wafer scale in a CMOS compatible process. This is an important step toward both industrialization of graphene as well as heterogeneous integration of graphene devices with diverse functionality. Furthermore, fabrication of graphene transistors on wafer scale provides a framework for the development of statistical analysis software tailored to graphene devices. In summary, graphene-based pressure sensors, humidity sensors, and transistors are developed for potential more than Moore applications. Further, a wafer scale fabrication process flow is established which can incorporate graphene devices into CMOS compatible process flows back end of the line.

QC 20160610

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Gautam, Madhav. "Development of Graphene Based Gas Sensors." University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1365030920.

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Carvalho, Alexandre Faia. "Simultaneous synthesis of diamond on graphene for electronic application." Master's thesis, Universidade de Aveiro, 2015. http://hdl.handle.net/10773/14801.

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Mestrado em Engenharia Física
Neste trabalho é descrito o estudo de estruturas híbridas de grafeno e diamante nano-cristalino (GDH) sintetizadas por deposição química em fase vapor por plasma de micro-ondas (MPCVD) em cobre. Foram investigadas técnicas de controlo da nucleação do diamante nano-cristalino, tendo sido encontrados dois processos com sucesso. Procedeu-se ainda à caracterização estrutural, morfológica e ótica das amostras por análise de SEM, TEM, AFM, EFM, medidas de transmitância UV-Vis e espetroscopia de Raman. A avaliação das propriedades de transporte destes materiais foi efetuada pela medição da curva de transferência de transístores de efeito de campo produzidos para o efeito, sendo os GDHs produzidos o material ativo do canal. Foram observadas baixas mobilidades devido à hidrogenação do grafeno. Em linha com resultados teóricos da literatura, foram encontradas evidências de abertura do hiato energético do grafeno, um potencial desenvolvimento para a aplicação em dispositivos de comutação lógica.
In this work, hybrid structures of graphene and nano-crystalline diamond (GDH) produced by microwave plasma chemical vapor deposition (MPCVD) in copper substrates are studied. The control of the diamond clusters nucleation was investigated, having two different approaches been identified as promising. Structural, morphological and optical characterization was carried out by SEM, TEM, AFM, EFM, UV-Vis transmittance, and Raman spectroscopy. The transport properties of this material were analyzed through the transfer curve of field-effect transistors with GDH channels. Low mobilities were found due to graphene hydrogenation. In line with theoretical studies, evidences were found of graphene band gap opening, a potential breakthrough for the development of logical switching devices.
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Tesař, Jan. "Příprava a charakterizace atomárně tenkých vrstev." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2020. http://www.nusl.cz/ntk/nusl-417143.

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Tato práce se zabývá oblastí dvourozměrných materiálů, jejich přípravou a analýzou. Pravděpodobně nejznámějším zástupcem dvourozměrných materiálů je grafen. Tento 2D allotrop uhlíku, někdy nazývaný „otec 2D materiálů“, v sobě spojuje neobyčejnou kombinaci elektrických, tepelných a mechanických vlastností. Grafen získal mnoho pozornosti a byl také připraven mnoha metodami. Jedna z těchto metod však stále vyniká nad ostatními kvalitou produkovaného grafenu. Mechanická exfoliace je ve srovnání s jinými technikami velmi jednoduchá, takto připravený grafen je však nejkvalitnější. Práce je také zaměřena na optimalizaci procesu tvorby heterostruktur složených z vrstev grafenu a hBN. Dle prezentovaného postupu bylo připraveno několik van der Waalsových heterostruktur, které byly analyzovány Ramanovskou spektroskopií, mikroskopií atomových sil a nízkoenergiovou elektronovou mikroskopií. Měření pohyblivosti nosičů náboje bylo provedeno v GFET uspořádání. Získané hodnoty pohyblivosti prokázaly vynikající transportní vlastnosti exfoliovaného grafenu v porovnání s grafenem připraveným jinými metodami. V práci popsaný proces přípravy je tedy vhodný pro výrobu kvalitních heterostruktur.
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Books on the topic "GFET"

1

El Gran Ferrocarril del Táchira (GFT): Huellas y testimonios. Caracas, Venezuela: Ediciones IVIC, 2008.

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Lethierry, H. Education nouvelle, quelle histoire!: Un mouvement en mouvement : le GFEN après Wallon. Rodez: Editions Subervie, 1986.

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Beijing sen lin zhi wu duo yang xin gfen bu yu bao hu guan li. Beijing: Ke xue chu ban she, 2012.

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Gft Bag-Friendship. Bob Siemon Designs, 1995.

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Gft Bag-Friendship. Bob Siemon Designs, 1995.

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Gft Bag-Friendship. Bob Siemon Designs, 1995.

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Gft Enclsrs-Spring. C.R. Gibson Company, 1997.

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Gft Bag-Friendship. Bob Siemon Designs, 1995.

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Gft Set-Natures. C.R. Gibson Company, 1997.

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Gft Bag-Womens Devotio. Zondervan Publishing Company, 1996.

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Book chapters on the topic "GFET"

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Dietz, Maria. "GFT Technologies SE." In Frauen in Führung, 135–55. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-57473-7_19.

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Basmann, R. L., D. J. Slottje, K. Hayes, J. D. Johnson, and D. J. Molina. "The GFT Utility Function." In Lecture Notes in Economics and Mathematical Systems, 9–32. New York, NY: Springer New York, 1988. http://dx.doi.org/10.1007/978-1-4684-9401-3_2.

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Basmann, R. L., D. J. Slottje, K. Hayes, J. D. Johnson, and D. J. Molina. "Estimating the GFT Form." In Lecture Notes in Economics and Mathematical Systems, 33–64. New York, NY: Springer New York, 1988. http://dx.doi.org/10.1007/978-1-4684-9401-3_3.

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Karimanzira, Divas, and Helge Renkewitz. "Detection and localization of an underwater docking station in acoustic images using machine learning and generalized fuzzy hough transform." In Machine Learning for Cyber Physical Systems, 23–31. Berlin, Heidelberg: Springer Berlin Heidelberg, 2020. http://dx.doi.org/10.1007/978-3-662-62746-4_3.

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AbstractLong underwater operations with autonomous battery charging and data transmission require an Autonomous Underwater Vehicle (AUV) with docking capability, which in turn presume the detection and localization of the docking station. Object detection and localization in sonar images is a very difficult task due to acoustic image problems such as, non-homogeneous resolution, non-uniform intensity, speckle noise, acoustic shadowing, acoustic reverberation and multipath problems. As for detection methods which are invariant to rotations, scale and shifts, the Generalized Fuzzy Hough Transform (GFHT) has proven to be a very powerful tool for arbitrary template detection in a noisy, blurred or even a distorted image, but it is associated with a practical drawback in computation time due to sliding window approach, especially if rotation and scaling invariance is taken into account. In this paper we use the fact that the docking station is made out of aluminum profiles which can easily be isolated using segmentation and classified by a Support Vector Machine (SVM) to enable selective search for the GFHT. After identification of the profile locations, GFHT is applied selectively at these locations for template matching producing the heading and position of the docking station. Further, this paper describes in detail the experiments that validate the methodology.
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Li, Yiren, Zheng Huang, Junchi Yan, Yi Zhou, Fan Ye, and Xianhui Liu. "GFTE: Graph-Based Financial Table Extraction." In Pattern Recognition. ICPR International Workshops and Challenges, 644–58. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68790-8_50.

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Basmann, R. L., D. J. Slottje, K. Hayes, J. D. Johnson, and D. J. Molina. "The GFT and Alternative Forms." In Lecture Notes in Economics and Mathematical Systems, 65–76. New York, NY: Springer New York, 1988. http://dx.doi.org/10.1007/978-1-4684-9401-3_4.

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Sánchez, Jairo R., Hugo Álvarez, and Diego Borro. "GFT: GPU Fast Triangulation of 3D Points." In Computer Vision and Graphics, 235–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15907-7_29.

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Abhishek Nath, A., and V. Navya. "Blind Recognition of Error-Correcting BCH Codes Using GFFT." In Lecture Notes in Electrical Engineering, 295–304. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7329-8_30.

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Levin, Mikhail K., Manju M. Hingorani, Raquell M. Holmes, Smita S. Patel, and John H. Carson. "Model-Based Global Analysis of Heterogeneous Experimental Data Using gfit." In Methods in Molecular Biology, 335–59. Totowa, NJ: Humana Press, 2009. http://dx.doi.org/10.1007/978-1-59745-525-1_12.

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Yu, Mei, Chengchang Zhen, Ruiguo Yu, Xuewei Li, Tianyi Xu, Mankun Zhao, Hongwei Liu, Jian Yu, and Xuyuan Dong. "GFEN: Graph Feature Extract Network for Click-Through Rate Prediction." In Neural Information Processing, 444–54. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-63836-8_37.

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Conference papers on the topic "GFET"

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Bardhan, Sudipta, Manodipan Sahoo, and Hafizur Rahaman. "Analytical study of BTE based multilayer GFET model." In 2016 International Conference on Microelectronics, Computing and Communications (MicroCom). IEEE, 2016. http://dx.doi.org/10.1109/microcom.2016.7522594.

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Chakraborty, S., K. Bhowmick, and N. S. Murty. "Saturation Optimization and Extrinsic Timing Analysis for Optically Controlled GFET." In 2019 International Conference on Communication and Electronics Systems (ICCES). IEEE, 2019. http://dx.doi.org/10.1109/icces45898.2019.9002309.

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B, Brown, Arun Kumar K B, Dhivagar B, and R. Udaiyakumar. "Modelling, Performance and Characteristic study of Graphene based Transistors (GFET)." In 2020 6th International Conference on Advanced Computing and Communication Systems (ICACCS). IEEE, 2020. http://dx.doi.org/10.1109/icaccs48705.2020.9074390.

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Abuelma'atti, Muhammad Taher. "Harmonic and intermodulation performance of MoS2FET- and GFET-based amplifiers." In 2013 18th International Conference on Digital Signal Processing (DSP). IEEE, 2013. http://dx.doi.org/10.1109/siecpc.2013.6550754.

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Selvarajan, Reena Sri, Azrul Azlan Hamzah, Siti Aisyah Zawawi, and Burhanuddin Yeop Majlis. "Optimisation of Pattern Transfer in Fabrication of GFET for Biosensing Applications." In 2018 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2018. http://dx.doi.org/10.1109/smelec.2018.8481332.

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Ou, Lu, and Shaolin Liao. "Ultra-sensitive Parity-Time Symmetry based Graphene FET (PT-GFET) Sensors." In 2020 IEEE Asia-Pacific Microwave Conference (APMC 2020). IEEE, 2020. http://dx.doi.org/10.1109/apmc47863.2020.9331324.

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Chandrasekar, L., K. P. Pradhan, and Pintu Kumar. "Comparative Study on Nonlinearity of Doped and Undoped GFET using DC Characteristics." In 2019 IEEE 16th India Council International Conference (INDICON). IEEE, 2019. http://dx.doi.org/10.1109/indicon47234.2019.9029086.

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Amirhosseini, Seyyed Asad, Mohammad Karimi, and Reza Safian. "Hot-carrier assisted Photo-thermoelectric current using nano-plasmonic structures in GFET." In 2016 Fourth International Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT). IEEE, 2016. http://dx.doi.org/10.1109/mmwatt.2016.7869868.

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Williams, Adrienne D., Fahima Ouchen, Steve S. Kim, Said Elhamri, Rajesh R. Naik, and James Grote. "DNA-nucleobases: gate dielectric/passivation layer for flexible GFET-based sensor applications." In SPIE Nanoscience + Engineering, edited by Norihisa Kobayashi, Fahima Ouchen, and Ileana Rau. SPIE, 2015. http://dx.doi.org/10.1117/12.2190913.

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Selvarajan, Reena Sri, Azrul Azlan Hamzah, and Burhanuddin Yeop Majlis. "Transfer characteristics of graphene based field effect transistor (GFET) for biosensing application." In 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2017. http://dx.doi.org/10.1109/rsm.2017.8069127.

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Reports on the topic "GFET"

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Werling, R., R. C. Houghton, Chande Jr., and A. M. Use of a Software Development and Support Environment as Government- Furnished Equipment (GFE). Fort Belvoir, VA: Defense Technical Information Center, June 1985. http://dx.doi.org/10.21236/ada159374.

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